Method of making ohmic contacts for algan/gan nitride heterostructures

FIELD: physics, instrument-making.

SUBSTANCE: invention relates to technologies of forming ohmic contacts for AlGaN/GaN heterostructures and can be used in making semiconductor devices, particularly microwave field-effect transistors. The technical result is achieved due to that the method of making ohmic contacts for AlGaN/GaN heterostructures, after etching conducting and barrier layers of the heterostructure, comprises further etching of windows of a SiO2 dielectric film before deposition of ohmic contacts, which avoids the need to sputter metal layers at an angle and improves the contact itself on the vertical boundary of the formed window of deposited metals with two-dimension electron gas.

EFFECT: invention reduces specific resistance of ohmic contacts and simplifies the process of making ohmic contacts.

2 cl, 4 dwg

 



 

Same patents:

FIELD: process engineering.

SUBSTANCE: invention relates to semiconductor technology, particularly, to production of semiconductor structures of contact-barrier metallisation of instrument. Contact-barrier metallisation is produced by series application of W (15% Ti) 0.17-0.19 mcm deep film at cross-field spraying of alloyed target at the rate of 2.5 E/s and Al (1.5% Si) 0.35-0.45 mcm deep film with subsequent thermal annealing at 450-480C for 30 minutes in the medium of nitrogen.

EFFECT: decreased density of defects, perfected structure parameters, higher quality and yield.

1 tbl

FIELD: physics.

SUBSTANCE: in the method of making a nanosized conducting element, the initial condensation phase is carried out in a medium of inert gases by magnetic sputtering of material from which a nanowire is formed onto a single-crystal chip for a predetermined time interval t, sufficient for detecting separate nucleation centres of the condensed material on steps. A substrate is placed such that the normal to its surface makes an angle with the direction of flow of the condensed atoms, a priori preventing formation of nucleation centres between steps, but sufficient for formation of nucleation centres of the condensed material on the steps. A microphotograph of the surface of the single-crystal chip is then made, from which density of nucleation centres of the condensed material on the steps and distance between the steps are determined, which are used to calculate the time of formation of the nanowire. The final phase of condensation of the material takes place during a time when there is no electrical conductivity between steps.

EFFECT: simple technique of forming solid-state one-dimensional nanostructures from different metals, semiconductors and alloys thereof, having environmental resistance and higher breakdown voltage.

2 cl, 4 dwg

FIELD: physics.

SUBSTANCE: method of forming contact drawing from nickel on silicon wafers involves formation of a dielectric film with windows, chemical deposition of nickel in said windows and formation of a nickel silicide interlayer from the gas phase during thermal decomposition of nickel tetracarbonyl vapour at temperature 200-300C, pressure in the system of (1-10)-10-1 mm Hg and rate of supplying nickel tetracarbonyl vapour equal to 0.5-2 ml/min per dm2 of the covering surface. The nickel layer is then removed up to the nickel silicide layer through chemical etching and nickel is deposited via chemical deposition onto the nickel silicide interlayer in the window of the dielectric film.

EFFECT: invention enables formation of a transparent contact for an electroconductive layer based on nickel with low ohmic resistance, independent of the type of conductivity and degree of doping of the silicon surface.

1 ex, 1 tbl

FIELD: physics; conductors.

SUBSTANCE: invention relates to semiconductor micro- and nanoelectronics and can be used in making integrated circuits, in making electrodes in transistors and capacitor plates, in making contacts and conduction regions on a silicon surface, as conducting, thermostable and barrier layers in metallisation systems. The method of making a thin-film metal structure of tungsten on silicon involves making a nanometer sublayer of an adhesion promoter on a silicon substrate and subsequent deposition of a thin film of tungsten through gas-phase chemical deposition through reduction of tungsten hexafluoride with hydrogen at low pressure. The adhesion promoter used is tungsten silicide W5Si3.

EFFECT: invention improves quality of the obtained metal structure of tungsten on silicon with simplification of the process at the same time.

3 cl, 1 dwg, 3 ex

FIELD: light devices production.

SUBSTANCE: method of quantum wells mixing within semiconductor device implies: a) formation of layer structure with quantum wells including doped upper layer; b) formation of etch preventing layer over mentioned upper layer; c) formation of temporary layer over mentioned etch preventing layer, and mentioned etch preventing layer has significantly lower etch rate than mentioned temporary layer on condition that etching requirements are preliminary specified; d) process of quantum wells mixing upon device structure making significant violation of at least a part of consumed layer; e) removal of temporary layer from at least device contact area by etching selective relative to etch preventing layer to uncover mentioned etch preventing layer within contact area; and f) formation of contact over layer structure with quantum wells directly on the surfaced uncovered after execution of stage e) at least within mentioned contact area.

EFFECT: improvement of device contact resistance.

15 cl, 10 dwg

The invention relates to a process of coating with plasma polymer coatings (thin films) on the surface of the objects for various purposes, made of various materials, and can be used in microelectronics for applying resistin, and passivating dielectric layers, in the medical industry for the application of corrosion protective coatings on surgical instruments and medical equipment, with the same purpose in the production of chemical ware, in the textile industry to impart to the fibers or tissues ready hydrophobic properties by coating on the surface of a thin layer of polymer, and in other areas

FIELD: light devices production.

SUBSTANCE: method of quantum wells mixing within semiconductor device implies: a) formation of layer structure with quantum wells including doped upper layer; b) formation of etch preventing layer over mentioned upper layer; c) formation of temporary layer over mentioned etch preventing layer, and mentioned etch preventing layer has significantly lower etch rate than mentioned temporary layer on condition that etching requirements are preliminary specified; d) process of quantum wells mixing upon device structure making significant violation of at least a part of consumed layer; e) removal of temporary layer from at least device contact area by etching selective relative to etch preventing layer to uncover mentioned etch preventing layer within contact area; and f) formation of contact over layer structure with quantum wells directly on the surfaced uncovered after execution of stage e) at least within mentioned contact area.

EFFECT: improvement of device contact resistance.

15 cl, 10 dwg

FIELD: physics; conductors.

SUBSTANCE: invention relates to semiconductor micro- and nanoelectronics and can be used in making integrated circuits, in making electrodes in transistors and capacitor plates, in making contacts and conduction regions on a silicon surface, as conducting, thermostable and barrier layers in metallisation systems. The method of making a thin-film metal structure of tungsten on silicon involves making a nanometer sublayer of an adhesion promoter on a silicon substrate and subsequent deposition of a thin film of tungsten through gas-phase chemical deposition through reduction of tungsten hexafluoride with hydrogen at low pressure. The adhesion promoter used is tungsten silicide W5Si3.

EFFECT: invention improves quality of the obtained metal structure of tungsten on silicon with simplification of the process at the same time.

3 cl, 1 dwg, 3 ex

FIELD: physics.

SUBSTANCE: method of forming contact drawing from nickel on silicon wafers involves formation of a dielectric film with windows, chemical deposition of nickel in said windows and formation of a nickel silicide interlayer from the gas phase during thermal decomposition of nickel tetracarbonyl vapour at temperature 200-300C, pressure in the system of (1-10)-10-1 mm Hg and rate of supplying nickel tetracarbonyl vapour equal to 0.5-2 ml/min per dm2 of the covering surface. The nickel layer is then removed up to the nickel silicide layer through chemical etching and nickel is deposited via chemical deposition onto the nickel silicide interlayer in the window of the dielectric film.

EFFECT: invention enables formation of a transparent contact for an electroconductive layer based on nickel with low ohmic resistance, independent of the type of conductivity and degree of doping of the silicon surface.

1 ex, 1 tbl

FIELD: physics.

SUBSTANCE: in the method of making a nanosized conducting element, the initial condensation phase is carried out in a medium of inert gases by magnetic sputtering of material from which a nanowire is formed onto a single-crystal chip for a predetermined time interval t, sufficient for detecting separate nucleation centres of the condensed material on steps. A substrate is placed such that the normal to its surface makes an angle with the direction of flow of the condensed atoms, a priori preventing formation of nucleation centres between steps, but sufficient for formation of nucleation centres of the condensed material on the steps. A microphotograph of the surface of the single-crystal chip is then made, from which density of nucleation centres of the condensed material on the steps and distance between the steps are determined, which are used to calculate the time of formation of the nanowire. The final phase of condensation of the material takes place during a time when there is no electrical conductivity between steps.

EFFECT: simple technique of forming solid-state one-dimensional nanostructures from different metals, semiconductors and alloys thereof, having environmental resistance and higher breakdown voltage.

2 cl, 4 dwg

FIELD: process engineering.

SUBSTANCE: invention relates to semiconductor technology, particularly, to production of semiconductor structures of contact-barrier metallisation of instrument. Contact-barrier metallisation is produced by series application of W (15% Ti) 0.17-0.19 mcm deep film at cross-field spraying of alloyed target at the rate of 2.5 E/s and Al (1.5% Si) 0.35-0.45 mcm deep film with subsequent thermal annealing at 450-480C for 30 minutes in the medium of nitrogen.

EFFECT: decreased density of defects, perfected structure parameters, higher quality and yield.

1 tbl

FIELD: electricity.

SUBSTANCE: invention relates to technology for production of semiconductor devices, in particular, to technology of making contacts of a semiconductor device. Method of making the semiconductor device presupposes forming of contacts on the basis of GeMoW with a doped layer of germanium. For formation of contacts at a pressure of 10-5 Pa one applies a 15 nm-thick layer of arsenic-doped germanium As in a concentration of 1019-1020 cm-3 by the method of electron-beam evaporation, and then, using the high-frequency atomization method, one applies a 15-nm layer of Mo and 300-nm layer of tungsten W with density of high-frequency power equal to 0.7 W/cm2, pressure of Ar equal to 0.8 Pa, followed by heat treatment in forming gas at a temperature of 800 C during 7-15 minutes.

EFFECT: invention enables reduction of defects density, higher technological effectiveness, improved parameters of devices, higher reliability and percentage yield.

1 cl, 1 tbl

FIELD: electricity.

SUBSTANCE: invention relates to electronic engineering and describes obtaining hole conductivity of an amorphous oxide film on the surface of a metal glass of Ni-Nb system by artificial oxidation. Method of making thin layers of oxides of Ni and Nb with hole conductivity for making components of very large scale integrated circuits provides for production of a thin amorphous film of the composition described by formula NbxNi100-x (where x=40-60 wt%) by magnetron sputtering onto a copper water-cooled substrate at the rate of 50 nm/min at the magnetron power of 70 W and subsequent production of the composition in the thin film described by formula NbxNi100-x (where x=40-60 wt%), hole conduction by annealing in an oxidizing atmosphere at the temperature of 200-300 C during 30-60 minutes.

EFFECT: proposed is a method of making thin layers of oxides of Ni and Nb with hole conductivity.

1 cl, 4 dwg

FIELD: physics, instrumentation.

SUBSTANCE: invention refers to the field of semiconductor manufacturing technology, namely to the manufacturing technology of devices with a reduced contact resistance. The method of semiconducting devices manufacture includes formation of contacts for n+-source/drain areas by applcation of film W by tungsten hexafluoride WF6 reduction by gaseous H2 at a partial H2 pressure of 133 Pa, a temperature of 300C, with dilution of the mixture supplied to the reactor by hydrogen in the ratio of (H2 :WF6> 200:1 ), with film W growth speed of 8-10 nm/min, with subsequent administration of carbon with concentration of 1013 cm-3 to the W/n+Si border and annealing at a temperature of 450C for 15 min. Introduction of carbon to the W/n+Si border prevents diffusion of Si to W. Carbon scores the grain boundaries in W and thus prevents Si to W diffusion.

EFFECT: invention provides reduced contact resistance, ensures manufacturability, provides better parameters, increases the reliability and the percentage of suitable devices yield.

1 tbl

FIELD: physics, instrument-making.

SUBSTANCE: invention relates to technologies of forming ohmic contacts for AlGaN/GaN heterostructures and can be used in making semiconductor devices, particularly microwave field-effect transistors. The technical result is achieved due to that the method of making ohmic contacts for AlGaN/GaN heterostructures, after etching conducting and barrier layers of the heterostructure, comprises further etching of windows of a SiO2 dielectric film before deposition of ohmic contacts, which avoids the need to sputter metal layers at an angle and improves the contact itself on the vertical boundary of the formed window of deposited metals with two-dimension electron gas.

EFFECT: invention reduces specific resistance of ohmic contacts and simplifies the process of making ohmic contacts.

2 cl, 4 dwg

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