Restoring memory element

FIELD: electronics.

SUBSTANCE: invention relates to microelectronics. Restoring memory element has a substrate with a conducting electrode located on its working surface. Said conducting electrode has an active layer of dielectric. Second conducting electrode is located on the active layer. Conducting electrode located on the working surface and/or the second conducting electrode are made from metal. Dielectric layer is metal oxide from which conducting electrode located on the working surface and/or the second conducting electrode is made.

EFFECT: technical result is lower voltage of reprogramming, as well as reduction of consumed power for reprogramming.

14 cl, 1 dwg

 



 

Same patents:

FIELD: information technology.

SUBSTANCE: memory cell for high-speed controlled gate-region potential EEPROM, the electric circuit of the memory cell having an n(p)-MOS transistor, first and second diodes, a capacitor, a number, an address and a bit line, wherein the cathode (anode) of the first diode is connected to the number line and the source of the n(p)-MOS transistor, its anode is connected to the anode of the second diode, the region under the gate of the n(p)-MOS transistor and the first lead of the capacitor, the second lead of which is connected to the gate of the n(p)-MOS transistor and the address line, and the cathode of the second diode is connected to the drain region of the n(p)-MOS transistor and the bit line, wherein the electric circuit of the memory cell additionally includes a p(n)-field-effect transistor, a common and control line, wherein its source is connected to the region under the gate of a MOS transistor, the gate is connected to the control line and the drain is connected to the common line.

EFFECT: higher reliability of memory cell work.

2 cl, 6 dwg

FIELD: information technology.

SUBSTANCE: flash memory element for electrically programmable read-only memory is meant for data storage when power is off. On a semiconductor base with a source and drain between the latter, there is a tunnelling layer, an auxiliary tunnelling layer, a memory layer, blocking layer and a switch. The auxiliary tunnelling and blocking layers are made from material with high dielectric permeability, from 5 to 2000, exceeding the dielectric permeability of the material of the tunnelling layer made from SiO2.

EFFECT: as a result there is reduction of voltage (4 V) and time (10-7 s) for recording/erasing information and increase in data storage time (up to 12 years).

7 cl, 1 dwg

FIELD: semiconductor memory devices.

SUBSTANCE: device has a lot of memory elements, each of which contains input and output areas, isolating film, channel area, shutter electrode, area for storing electric charges, device also contains large number of periphery circuits, containing reading amplifier, register for storing recorded data of memory elements, register, which preserves the flag, indicating end of record during its check, and circuit, which after recording operation compares value, read from memory cell, to value, fixed by flag at the end of record, and overwrites value indicated by the flag.

EFFECT: higher reliability of operation.

5 cl, 71 dwg

The invention relates to a semiconductor memory device

The invention relates to devices and structures integrated microelectronics, in particular to an integrated static memory cells and memory devices BIS and computer

The invention relates to a permanent storage device and control method

The invention relates to a semiconductor memory device with multiple memory cells and is used mainly in the cards with an embedded microchip, such as card ID, credit cards, payment cards, etc

The invention relates to programmable permanent storage devices such as electrically erasable ROM (EEPROM)

FIELD: semiconductor memory devices.

SUBSTANCE: device has a lot of memory elements, each of which contains input and output areas, isolating film, channel area, shutter electrode, area for storing electric charges, device also contains large number of periphery circuits, containing reading amplifier, register for storing recorded data of memory elements, register, which preserves the flag, indicating end of record during its check, and circuit, which after recording operation compares value, read from memory cell, to value, fixed by flag at the end of record, and overwrites value indicated by the flag.

EFFECT: higher reliability of operation.

5 cl, 71 dwg

FIELD: information technology.

SUBSTANCE: flash memory element for electrically programmable read-only memory is meant for data storage when power is off. On a semiconductor base with a source and drain between the latter, there is a tunnelling layer, an auxiliary tunnelling layer, a memory layer, blocking layer and a switch. The auxiliary tunnelling and blocking layers are made from material with high dielectric permeability, from 5 to 2000, exceeding the dielectric permeability of the material of the tunnelling layer made from SiO2.

EFFECT: as a result there is reduction of voltage (4 V) and time (10-7 s) for recording/erasing information and increase in data storage time (up to 12 years).

7 cl, 1 dwg

FIELD: information technology.

SUBSTANCE: memory cell for high-speed controlled gate-region potential EEPROM, the electric circuit of the memory cell having an n(p)-MOS transistor, first and second diodes, a capacitor, a number, an address and a bit line, wherein the cathode (anode) of the first diode is connected to the number line and the source of the n(p)-MOS transistor, its anode is connected to the anode of the second diode, the region under the gate of the n(p)-MOS transistor and the first lead of the capacitor, the second lead of which is connected to the gate of the n(p)-MOS transistor and the address line, and the cathode of the second diode is connected to the drain region of the n(p)-MOS transistor and the bit line, wherein the electric circuit of the memory cell additionally includes a p(n)-field-effect transistor, a common and control line, wherein its source is connected to the region under the gate of a MOS transistor, the gate is connected to the control line and the drain is connected to the common line.

EFFECT: higher reliability of memory cell work.

2 cl, 6 dwg

FIELD: electronics.

SUBSTANCE: invention relates to microelectronics. Restoring memory element has a substrate with a conducting electrode located on its working surface. Said conducting electrode has an active layer of dielectric. Second conducting electrode is located on the active layer. Conducting electrode located on the working surface and/or the second conducting electrode are made from metal. Dielectric layer is metal oxide from which conducting electrode located on the working surface and/or the second conducting electrode is made.

EFFECT: technical result is lower voltage of reprogramming, as well as reduction of consumed power for reprogramming.

14 cl, 1 dwg

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