Composition of polishing etching agent for chemical-mechanical polishing of cadmium-zinc telluride

FIELD: chemistry.

SUBSTANCE: composition of polishing etching agent includes the following components: 7 volume parts of sulphuric acid (98%), 1 volume part of hydrogen peroxide (30%), 1 volume part of water, 3.5 volume parts of ethyleneglycol.

EFFECT: increase of polishing speed at specified speed of disk revolution.

2 dwg, 1 tbl

 



 

Same patents:

FIELD: chemistry.

SUBSTANCE: method includes treating the surface of crystalline silicon by electrochemical etching in hydrofluoric acid solution with concentration of 20-30% while supplying current with surface density of 750-1000 mA/cm2 for 5-30 s to obtain hydrophobic silicon or supplying current with surface density of not more than 650 mA/cm2 for 5-30 s to obtain hydrophilic silicon.

EFFECT: method enables to obtain a surface with multimodal nano- or microporosity in a single step.

4 dwg

FIELD: technological processes.

SUBSTANCE: invention is related to methods of processing of massive (diameter of up to 200 mm) optic elements from zinc selenide, which are used as passive optic elements of powerful CO2-lasers and other devices that work in infrared range of wavelengths. Method includes deep polishing with classified flour of aluminium oxide and deep chemical-mechanical polishing with application of polishing member material on the basis of modified oleoresin with softening temperature of 50-80°C, chemically active component, such as nitric or chloric acid or their mixture with concentration of 0.5-5 M and lubricoolant. Polishing is performed at the pressure of 25-500 g/cm2. Method makes it possible to prepare surface of zinc selenide that meets the requirements of 3rd class of surface purity according to GOST 11141-84 with deviation from the plane of not more than interferential ring with local error of not more than 0.1 of interferential ring. Speed of material removal, at mentioned conditions of processing, makes (4-11)•10-3 g/hr•cm2.

EFFECT: preparation of surface of zinc selenide.

3 cl, 5 ex

FIELD: microelectronics, namely processes for preparing even-atom surfaces of semiconductors.

SUBSTANCE: method comprises steps of chemical-dynamic polishing of substrate surface in polishing etching agent containing sulfuric acid, hydrogen peroxide and water for 8 - 10 min; removing layer of natural oxide in aqueous solution of hydrochloric acid until achieving hydrophobic properties of purified surface of substrate; washing it in deionized water and drying in centrifuge. Then substrate is treated in vapor of selenium in chamber of quasi-closed volume while forming gallium selenide layer at temperature of substrate Ts = (310 -350)°C, temperature of chamber walls Tc = (230 - 250)°C, temperature of selenium Tsel = (280 - 300)°C for 3 - 10 min. After such procedure substrate is again placed in aqueous solution of hydrochloric acid in order to etch layer of gallium selenide. Invention allows produce even-atom surface of gallium arsenide at non-uniformity degree such as 3Å.

EFFECT: possibility for using substrates for constructing nano-objects with the aid of self-organization effects.

4 dwg

FIELD: chemical industry; other industries; methods of polishing of the silver chloride crystals.

SUBSTANCE: the invention is pertaining to the field of manufacture of the optical elements and may be used in the infrared engineering. The method provides for the abrasive polishing of AgCl crystals with the sodium thiosulfate water solution and with the finishing washing of the treated article in 30-40 % solution of 2-methyl-2-aminopropane (СН3)3CNH2 in ethanol С2Н5ОН and the following dry final polishing. The method ensures the high-accuracy polishing of the articles made out of the silver chloride crystals and the high quality of the polished surfaces.

EFFECT: the invention ensures the high-accuracy polishing of the articles made out of the silver chloride crystals and the high quality of the polished surfaces.

2 ex

The invention relates to a method of hydrothermal etching, providing for the establishment of environmentally friendly methods of etching of single crystals of lithium tantalate, used in electronic engineering
The invention relates to a method of hydrothermal etching, providing for the establishment of environmentally friendly methods of etching of single crystals metaniobate lithium, used in electronic engineering

The invention relates to the field of electronic equipment, and in particular to methods of processing substrates from oxides, in particular of cubic, and can be used in the production of epitaxial structures, mainly with compounds of HTS (high temperature superconductors)
Titanium etchant // 2496819

FIELD: chemistry.

SUBSTANCE: titanium implant etchant contains phosphoric acid, an oxidant and water in the following quantitative ratios of components, wt %: phosphoric acid 23-65, hydrogen peroxide 3-30, water - the balance.

EFFECT: invention enables to obtain a selective titanium etchant, having a low rate of etching, which enables to control the thickness of the etched layer and forms a residual layer of non-stoichiometric titanium phosphates which provide chemical affinity to phosphorus-containing bioactive coatings made from hydroxyapatite, which is the basic substance of bone tissue.

3 ex

FIELD: metallurgy.

SUBSTANCE: invention relates to chemical treatment of metals and is intended in production of printed boards with protective soldering mask on copper. Selective etchant comprises nitric acid, iron nitrate, sodium chloride, benzene azimide as copper etching inhibitor and ethyl alcohol at the following ratio of components: 200-250 ml/l of 68%-solution of HNO3, 130-170 g/l of Fe(NO3)3·9H2O, 2-3 g/l of NaCl, 0.5-1 g/l of benzene azimide, 5-6 ml/l of ethyl alcohol.

EFFECT: higher selectivity of etching.

1 tbl

FIELD: metallurgy.

SUBSTANCE: invention relates to chemical metal treatment technology and can be used during the manufacturing of double-ended printed circuit board with blocking soldering mask for copper. Preferential etch of galvanic tin-and-leaden coatings from copper basis contains following components: fluoboric acid (40%-solution) 950.0 - 970.0 ml/l, hydrogen peroxide (35%-solution) 30.0 - 50.0 ml/l, copper nitrate (II) 0.03 - 0.04 g/l, potassium fluoride 5.0 - 8.0 g/l, sodium nitrate 5.5 - 7.5 g/l. While usage of proposed etchant etching rate of alloy tin-and-leaden more than ten times increases etching rate of copper basis.

EFFECT: decrease of destruction risk of metallisation in holes of printed circuit card and increasing of yield ratio at production of electronic products.

1 tbl

FIELD: chemistry.

SUBSTANCE: invention concerns engineering industry and can be applied in aircraft and power-producing turbine manufacturing for turbine blade repair. Method involves preliminary scale removal from parts, pickling treatment in solution and further removal of products of reaction between solution and coating elements. Electrolyte of the following composition, in wt %, is used as pickling solution: nitric acid 20-25, chlorine acid 4-6, potassium bichromate 9.6-11.6, ammonium molybdate 2.0-2.2, the rest is water. The process is performed at solution temperature under 20°C till total removal of heat-resistant coating.

EFFECT: improved yield of heat-resistant coating removal process, including diffusion zone, using pickling solution consisting of efficiently utilizable components, reduced power consumption of process.

1 tbl, 1 ex

FIELD: technological processes of metal treating, namely production of printed circuit boards, plating.

SUBSTANCE: solution contains, g/l: nitric acid, 252 - 315; iron nitrate, 50 - 100; sodium chloride, 1 - 5; tin ions - up to 150. Invention provides increased rate of etching tin coating up to 15 micrometer/min.

EFFECT: increased rate of etching tin coating, enhanced stability and strength of procedures realized with use of solution.

1 ex

The invention relates to the etching of the metal by chemical methods and can be used in the printing industry for the manufacture of forms of letterpress printing, as well as in all sectors, using the processes of dimensional etching of zinc and its alloys

FIELD: technological processes of metal treating, namely production of printed circuit boards, plating.

SUBSTANCE: solution contains, g/l: nitric acid, 252 - 315; iron nitrate, 50 - 100; sodium chloride, 1 - 5; tin ions - up to 150. Invention provides increased rate of etching tin coating up to 15 micrometer/min.

EFFECT: increased rate of etching tin coating, enhanced stability and strength of procedures realized with use of solution.

1 ex

FIELD: chemistry.

SUBSTANCE: invention concerns engineering industry and can be applied in aircraft and power-producing turbine manufacturing for turbine blade repair. Method involves preliminary scale removal from parts, pickling treatment in solution and further removal of products of reaction between solution and coating elements. Electrolyte of the following composition, in wt %, is used as pickling solution: nitric acid 20-25, chlorine acid 4-6, potassium bichromate 9.6-11.6, ammonium molybdate 2.0-2.2, the rest is water. The process is performed at solution temperature under 20°C till total removal of heat-resistant coating.

EFFECT: improved yield of heat-resistant coating removal process, including diffusion zone, using pickling solution consisting of efficiently utilizable components, reduced power consumption of process.

1 tbl, 1 ex

FIELD: metallurgy.

SUBSTANCE: invention relates to chemical metal treatment technology and can be used during the manufacturing of double-ended printed circuit board with blocking soldering mask for copper. Preferential etch of galvanic tin-and-leaden coatings from copper basis contains following components: fluoboric acid (40%-solution) 950.0 - 970.0 ml/l, hydrogen peroxide (35%-solution) 30.0 - 50.0 ml/l, copper nitrate (II) 0.03 - 0.04 g/l, potassium fluoride 5.0 - 8.0 g/l, sodium nitrate 5.5 - 7.5 g/l. While usage of proposed etchant etching rate of alloy tin-and-leaden more than ten times increases etching rate of copper basis.

EFFECT: decrease of destruction risk of metallisation in holes of printed circuit card and increasing of yield ratio at production of electronic products.

1 tbl

FIELD: metallurgy.

SUBSTANCE: invention relates to chemical treatment of metals and is intended in production of printed boards with protective soldering mask on copper. Selective etchant comprises nitric acid, iron nitrate, sodium chloride, benzene azimide as copper etching inhibitor and ethyl alcohol at the following ratio of components: 200-250 ml/l of 68%-solution of HNO3, 130-170 g/l of Fe(NO3)3·9H2O, 2-3 g/l of NaCl, 0.5-1 g/l of benzene azimide, 5-6 ml/l of ethyl alcohol.

EFFECT: higher selectivity of etching.

1 tbl

Titanium etchant // 2496819

FIELD: chemistry.

SUBSTANCE: titanium implant etchant contains phosphoric acid, an oxidant and water in the following quantitative ratios of components, wt %: phosphoric acid 23-65, hydrogen peroxide 3-30, water - the balance.

EFFECT: invention enables to obtain a selective titanium etchant, having a low rate of etching, which enables to control the thickness of the etched layer and forms a residual layer of non-stoichiometric titanium phosphates which provide chemical affinity to phosphorus-containing bioactive coatings made from hydroxyapatite, which is the basic substance of bone tissue.

3 ex

FIELD: chemistry.

SUBSTANCE: composition of polishing etching agent includes the following components: 7 volume parts of sulphuric acid (98%), 1 volume part of hydrogen peroxide (30%), 1 volume part of water, 3.5 volume parts of ethyleneglycol.

EFFECT: increase of polishing speed at specified speed of disk revolution.

2 dwg, 1 tbl

FIELD: chemistry.

SUBSTANCE: selective etching agent for removal of tin-lead coatings from copper base contains H[BF4] (40% solution) 910-930 ml/l, H2O2 (35% solution) 70-90 ml/l, Cu(NO3)2 0.03-0.04 g/l, KF 5-8 g/l, NaNO3 5.5-7.5 g/l, oleox-5 0.6-0.7 g/l.

EFFECT: invention makes it possible to increase selectivity of etching of galvanic tin-lead coatings with copper base due to reduction of copper etching rate.

1 tbl

FIELD: metallurgy.

SUBSTANCE: invention relates to nonferrous metallurgy and can be used for waste processing of galvanized steel. Method involves waste processing of galvanized steel by aqueous solution containing 250 g/l of hydrochloric acid and 2.5 g/l of hexamethylene tetramine, wherein galvanized steel wastes are maintained at the temperature of 10-40 °C during 20-30 minutes, then the aqueous solution saturated of zinc is drained and the steel wastes are extracted.

EFFECT: method provides removal of zinc from galvanized steel up to the content of not more than 5 % of the initial one, under the conditions of machine-building industry foundries, taking into account the protection of the wastes metal base from dissolving in acid during the reaction.

1 cl

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