Device for determination of parameters of metal-dielectric structures

FIELD: measurement equipment.

SUBSTANCE: device for determining parameters of metal-dielectric structures, which contains a wave-guiding system connected to a cylindrical resonator, in the hole of which a coupling element is arranged, differs by the fact that the coupling element is of measurement type and made in the form of an adjustable quarter-wave frame, one end of which is connected to the housing of the cylindrical resonator, and the other one is made in the form of a nib point placed into a dielectric insert arranged in the holes of the cylindrical resonator housing and projecting beyond external boundaries of the resonator by the value that is smaller than length of a standing electromagnetic wave of the main type of the cylindrical resonator; the device includes additional coupling element intended for input/output of electromagnetic radiation of microwave range, which is made in the form of two metal quarter-wave frames connected to each other with one end and placed into a dielectric insert located in the holes between the wave-guiding system and the cylindrical resonator housing. The first frame is made so that its plane can be turned and the same frame is located in the inner cavity of the cylindrical resonator, and the second one is located in the wave-guiding system; other ends of frames are connected to the cylindrical resonator housing and the wave-guiding systems accordingly; in the wave-guiding system an arrangement is made for a one-dimensional waveguide microwave photonic crystal representing periodically alternating layers of two types; layers of the first type have constant value of relative dielectric permeability that is higher than one, and layers of the second type - close to one; total number of layers and number of layers of the second type - uneven; layers of the first type are extreme in the photonic crystal structure; thickness of layers of the first type is less than thickness of layers of the second type; sum of electrical lengths of layers of the first and the second types is equal to half length of an electromagnetic wave, which corresponds to the middle of the used frequency range; thickness of central layer of photonic crystal comprises one fourth of thickness of the layer of the second type.

EFFECT: improving sensitivity and enlarging functional capabilities.

4 dwg

 

The invention relates to measurement technology and is used to measure the dielectric permittivity and thickness of nanometer conductive films deposited on a substrate of dielectric material.

A device that implements the method of measurement of electrophysical parameters of the structure of nanometer metal film of a semiconductor or dielectric substrate (see patent RF №2349904, IPC G01N 22/00), which consists in the irradiation of the radiation patterns of the microwave range using volnovatsa system, the measurement of the frequency dependence of the reflection coefficient of electromagnetic radiation in the microwave range of the measured structure. Before the structure is placed one-dimensional photonic crystal, change the thickness or dielectric constant of one of the layers for violation of the periodicity of the structure. The conductivity or the thickness of the metal film is determined by the frequency dependence of the reflection coefficient of the structure of photonic crystal - metal film - substrate" for known parameters of the substrate.

However, the drawbacks are the lack of local measurements due to the averaging of the measurement results on the cross section volnovatsa system, and the absence of a regulating element, providing increased sensitivity metering is subject to the parameters of the investigated structures.

A device for measurement of complex permittivity of low impedance materials at microwave. In borneolum microwave microscope proposed by the authors (M. Golosovsky, D. Davidov. Novel millimeter-wave neareld resistivity microscope. - Appl. Phys. Lett. 1996. - so 68, v.11 - P. 1579-1581), as a probe was used segment of the waveguide is installed on the end of the resonant aperture overlying its cross-section. The hole in the diaphragm made of thin metal plate, was a narrow slit width of 0.1 mm and a length of 1.5 mm

However, this device does not allow the measurement of parameters of dielectric and conductive samples with a high degree of locality, averaging the measurements over the entire area of the pupil, and there is no regulatory element, providing increased sensitivity of the measured parameters of the investigated structures.

The closest in design to the proposed solution is a sensor for measuring resistivity of semiconductor materials (see USSR author's certificate No. 1821712, G01N 27/02, H01L 21/66) containing a cylindrical cavity with the first and second connection elements for input and output energy from the oscillator and the measuring hole. The sensor further comprises an adjustable frame element connection, the conclusion of which the positioning in the measuring hole in the side wall of the cavity, which is the platform on which is placed the sample.

However, the disadvantages of the prototype are the presence of a contact between the ground with a measuring hole and a test specimen, the results of measurements over the entire area of the measuring holes, the impossibility of measuring the dielectric parameters of the samples.

The task of the invention is to provide the possibility of determining the dielectric constant of the samples and the thickness of the conductive nanometer films deposited on a dielectric substrate with high sensitivity to changes in the measured parameters of the samples, providing non-contact measurement and improvement of local measurements.

The technical result of the invention is the extension of the functionality associated with the problem of determining the dielectric permittivity of the samples and the thickness of the conductive nanometer films deposited on a dielectric substrate, providing high sensitivity of the device to changes in the measured parameters of the samples, providing non-contact and increase the locality of the measurement.

This technical result is achieved in that the device for determining parameters of metal-dielectric structures containing Volno the traveling system connected with a cylindrical cavity in the housing bore which is located the element of communication, according to the decision of the coupling element is a measuring and manufactured in the form of an adjustable quarter-wave frame, one end of which is connected to the housing of the cylindrical resonator, and the other is made in the form of points, placed in a dielectric insert is placed in the housing bore of the cylindrical cavity and protruding beyond the outer boundaries of the cavity by an amount much less than the length of the standing electromagnetic wave of the main types of cylindrical resonator; the device contains an additional element of communication that is designed to input/output electromagnetic radiation in the microwave range, made in the form of two interconnected to one end of quarter-wave metal frames, placed in a dielectric insert located in the bore between volnovatsa system and the housing cylindrical cavity, and the first frame is configured to rotate its plane and is located in the internal cavity of the cylindrical resonator, and the second in volnovatsa system, the other ends of the framework is connected to the housing cylindrical cavity and volnovatsa system, respectively; in volnovatsa system hosted a one-dimensional waveguide microwave photonic crystal, representing uridicheski alternating layers of two types, layers of the first type have a constant value of relative permittivity is much greater than one, the layers of the second type is close to unity, the total number of layers and number of layers of the second type is odd in the extreme structure of the photonic crystal layers are of the first type, the thickness of the layers of the first type is much less than the thickness of the layers of the second type, the sum of the electrical lengths of the layers of the first and the second type is equal to half of the wavelength of electromagnetic waves corresponding to the middle of the used frequency range, the thickness of the Central layer of the photonic crystal is one-fourth the thickness of the layer of the second type.

1. The high sensitivity of the device to changes in the measured parameters of the samples is ensured by using a tunable resonator in the form of one-dimensional photonic crystal waveguide placed in the waveguide section. The parameters of the waveguide of the photonic crystal and the angle of rotation adjustable" of coupling element α are chosen so that the resonance frequency dependence of the reflection coefficient of the microwave radiation from the sample surface for a given waveguide system containing one-dimensional photonic crystal waveguide with impaired Central layer, and the resonance frequency dependence of the reflection coefficient of the microwave and the radiation from the sample surface for the device without the waveguide of the photonic crystal were on the same frequency (same frequency).

2. Test specimens are placed at a fixed distance from the probe tip.

3. The lack of contact between the tip of the probe and the sample surface allows you to make the tip of the probe with a radius of less than 0.5 μm, and, consequently, to improve the locality of measurement.

The originality of this invention is as follows

1. In the waveguide system is placed one-dimensional waveguide microwave photonic crystal, which is a periodically alternating layers of two types of layers of the first type have a constant value of relative permittivity is much greater than one, the layers of the second type is close to unity, the total number of layers and number of layers of the second type is odd in the extreme structure of the photonic crystal layers are of the first type, the thickness of the layers of the first type is much less than the thickness of the layers of the second type, the sum of the electrical lengths of the layers of the first and of the second type should be equal to half of the wavelength of electromagnetic waves corresponding to the middle of the used frequency range, the thickness of the Central layer of the photonic crystal is reduced to one-fourth of the thickness of the layer of the second type.

2. The use of additional tunable resonator in the form of a waveguide section with a one-dimensional photonic crystal with impaired Central is the second layer and an adjustable coupling element allows for the "combination" of "resonance features", that increases the sensitivity of the system to changes in the measured parameters of the investigated samples.

3. The presence of a fixed distance (gap) between the tip of the probe and a test specimen.

The device illustrated by the drawings. In Fig.1 shows a probe blizhnepolevoi microwave microscope based on a cylindrical microwave resonator with the framework element of communication and one-dimensional photonic crystal; box - framework element connection; insert Into cylindrical microwave resonator with the framework element of communication and the measured sample 10. In Fig.2 shows the frequency dependence of the reflection coefficient of the microwave wavelength in the vicinity of the resonance frequency at a fixed gap, equal to 18 microns, between the probe and the samples with different dielectric constant. In Fig.3 shows the frequency dependence of the reflection coefficient of the microwave wavelength in the vicinity of the resonance frequency at a fixed gap, equal to 18 microns, between the probe and the investigated samples with different thickness of nanometer metal layer of Cr. In Fig.4 presents the frequency dependence of the reflection coefficient of the microwave wavelength in the vicinity of the resonance frequency at a fixed gap, equal to 18 microns, between the probe and the investigated samples with different thickness of nanometer metal layer of Cr. Positions on the drawings indicated:

1 - body calendartaskpanecontrol

2 - cut waveguide section 23×10 mm

3 - membrane thickness of 0.5 mm

4 is a frame element is made of copper wire with a diameter in cross section of 0.6 mm and designed for connection of the cylindrical resonator and waveguide

5 - plate foam

6 - second framework element, which passes through a hole in the resonator, and its end portion acts as a needle probe, and located at an angle of 120° to the first frame element 4

7 - cylindrical PTFE sleeve

8 - cover

9 - segment photonic crystal waveguide with a violation of the periodicity

10 - measured sample

11 - frequency dependence of the reflection coefficient of the microwave wavelength in the vicinity of the resonance frequency of the probe in the cavity with the master coupling element connected with the length of the waveguide of the photonic crystal with a violation of the periodicity

12 - frequency dependence of the reflection coefficient of the microwave wavelength in the vicinity of the resonance frequency of the probe in the cavity with the master coupling element connected with the framework element connection without the photonic crystal

13 - frequency dependence of the reflection coefficient of the microwave wavelength in the vicinity of the resonance frequency from the individual waveguide of the photonic crystal with a violation of the periodicity

14 - frequency dependence of the reflection coefficient of the microwave wavelength in arrestes and the resonance frequency at a fixed gap, equal to 18 microns, between probe and sample "air", i.e., corresponds to the absence of measured sample (ε=1)

15 - frequency dependence of the reflection coefficient of the microwave wavelength in the vicinity of the resonance frequency at a fixed gap, equal to 18 microns, between the probe and the sample Teflon (ε=2,0)

16 - frequency dependence of the reflection coefficient of the microwave wavelength in the vicinity of the resonance frequency at a fixed gap, equal to 18 microns, between the probe and the sample getinsa (ε=2,5)

17 - the frequency dependence of the reflection coefficient of the microwave wavelength in the vicinity of the resonance frequency at a fixed gap, equal to 18 microns, between probe and sample PCB (ε=3,4)

18 - the frequency dependence of the reflection coefficient of the microwave wavelength in the vicinity of the resonance frequency at a fixed gap, equal to 18 microns, between the probe and the sample polikor (ε=9,6)

19 - the frequency dependence of the reflection coefficient of the microwave wavelength in the vicinity of the resonance frequency at a fixed gap, equal to 18 microns, between the probe and the sample of silicon (ε=11,7)

20 - dependence of the reflection coefficient of the microwave wavelength, measured at a fixed frequency ƒ=10,2411 GHz in the vicinity of the minimum of the reflection coefficient, the value of the dielectric constant of the samples placed at a fixed distance near the probe tip

21 - dependence of the reflection coefficient of the high frequency waves from arena fixed frequency ƒ=10,2398 GHz in the vicinity of the minimum of the reflection coefficient, the magnitude of the dielectric permittivity of the samples placed at a fixed distance near the probe tip

22 - dependence of the reflection coefficient of the microwave wavelength, measured at a fixed frequency ƒ=10,2384 GHz in the vicinity of the minimum of the reflection coefficient, the value of the dielectric constant of the samples placed at a fixed distance near the probe tip

23 - the frequency dependence of the reflection coefficient of the microwave wavelength in the vicinity of the resonance frequency at a fixed gap, equal to 18 microns, between the probe and a test specimen (dielectric plate without metallization)

24 - the frequency dependence of the reflection coefficient of the microwave wavelength in the vicinity of the resonance frequency at a fixed gap, equal to 18 microns, between the probe and a test specimen (thickness of a metal film (d=3 nm)

25 - the frequency dependence of the reflection coefficient of the microwave wavelength in the vicinity of the resonance frequency at a fixed gap, equal to 18 microns, between the probe and a test specimen (thickness of a metal film d=7 nm)

26 - the frequency dependence of the reflection coefficient of the microwave wavelength in the vicinity of the resonance frequency at a fixed gap, equal to 18 microns, between the probe and a test specimen (thickness of a metal film (d=9 nm)

27 - the frequency dependence of the reflection coefficient of the microwave wavelength in acres the particular resonant frequency at a fixed gap, equal to 18 microns, between the probe and a test specimen (thickness of a metal film (d=13 nm)

28 - the frequency dependence of the reflection coefficient of the microwave wavelength in the vicinity of the resonance frequency at a fixed gap, equal to 18 microns, between the probe and a test specimen (thickness of a metal film (d=30 nm)

29 - the frequency dependence of the reflection coefficient of the microwave wavelength in the vicinity of the resonance frequency at a fixed gap, equal to 18 microns, between the probe and a test specimen (thickness of a metal film (d=180 nm)

30 - dependence of the reflection coefficient of the microwave wavelength, measured at a fixed frequency ƒ=10,77908 GHz in the vicinity of the minimum of the reflection coefficient, the thickness of nanometer metal layer on paligorova plates placed at a fixed distance near the probe tip

31 - dependence of the reflection coefficient of the microwave wavelength, measured at a fixed frequency ƒ=10,77895 GHz in the vicinity of the minimum of the reflection coefficient, the thickness of nanometer metal layer on paligorova plates placed at a fixed distance near the probe tip

32 - dependence of the reflection coefficient of the microwave wavelength, measured at a fixed frequency ƒ=10,77850 GHz in the vicinity of the minimum of the reflection coefficient, the thickness of nanometer metal layer on paligorova plates, RA is mesenich at a fixed distance near the probe tip

An example of the technical implementation of the device for measuring parameters of metal-dielectric structures

The device has a cylindrical resonator 1, in which the element of the exciting electromagnetic waves, used the master coupling element 2 (see Fig.1).

General view of the probe blizhnepolevoi microwave microscope based on a cylindrical microwave resonator with the framework element of communication and one-dimensional photonic crystal shown in Fig.1. In the case of a cylindrical resonator 1 are soldered in a section of waveguide 2 section 23×10 mm so that between the cavity of the waveguide and the inner wall of the body cavity remained membrane 3 with a thickness of 0.5 mm In the membrane 3 made of 6 mm diameter hole, through which passes a framework element 4 made of copper wire with a diameter in cross section of 0.6 mm and designed for connection of the cylindrical resonator and the waveguide. From the side of the waveguide frame fixed in the plate foam 5. The frame selected for optimum transmission of electromagnetic waves in the frequency range from 8 to 12 GHz. At an angle of 120° to the first frame element 4 relative to the center of the circumference of the cylindrical resonator is a second framework element 6, which passes through a hole in the resonator, and its end portion acts as a needle probe. The end of the probe will the enterprising sharpened with a gradually decreasing in diameter to the size of 1.0 μm. The second framework element 6 is also made of copper wire with a diameter in cross section of 0.6 mm Fixed it in the cylindrical bore of the sleeve 7, which allows you to change the position of the frame element by changing the angle α, the plane of the frame around the axis of the needle probe. The case of the cylindrical resonator (diameter cylinder 65,1 mm, height - 18.3 mm) on either side is closed by a lid 8.

The probe on the basis of a cylindrical resonator with the framework element was connected to a segment of the waveguide of the photonic crystal 9 with violation of periodicity (see Fig.1). Used one-dimensional photonic crystal waveguide, which consists of eleven layers. Odd layers were made of polikor (Al2O3, ε=9,6), even - PTFE (ε=2,1). The odd length of segments - 1 mm - even lengths ranged from 7 mm to 14 mm Violation of periodicity was created by changing the length of the sixth, the Central layer, the length violated the sixth layer (PTFE) ranged from 3 mm to 4 mm

High-frequency characteristics of the probe in the cavity with the master coupling element connected with the length of the waveguide of the photonic crystal with a violation of the periodicity was studied by using a vector network analyzer Agilent PNA-L Network Analyzer N523OA, which is connected through a period of Volnov is Yes.

In Fig.2 presents the results of measurements of the frequency dependence of the reflection coefficient (S11) High frequency waves in the vicinity of the resonance frequency of the probe in the cavity with the master coupling element connected with the length of the waveguide of the photonic crystal with a violation of the frequency (curve 11). On the same drawing shows the frequency dependence of the reflection coefficient of the microwave wavelength in the vicinity of the resonance frequency of the probe in the form of a resonator with the framework element connection without the photonic crystal (curve 12) and the frequency dependence of the reflection coefficient of the microwave wavelength of the photonic crystal near its transparency window (curve 13).

When approaching the tip of the probe sample, there was an abrupt change of the input impedance of the probe, and changes the reflection coefficient of the high frequency waves from the probe. The magnitude of the changes depends on the parameters of the investigated sample, such as conductivity, dielectric constant, thickness.

Rotation of the framework element connection electrode, changing the effective cross-sectional area of the frame, is penetrated magnetic lines of force of the field of electromagnetic oscillations in the resonator, leading to change of the input impedance of the probe, it is possible to achieve the maximum sensitivity of the reflection coefficient of the high frequency waves to change Electrophysics the x characteristics of the studied sample.

In Fig.3 presents the results of measurements of the frequency dependence of the reflection coefficient of the microwave wavelength in the vicinity of the resonance frequency at a fixed gap, equal to 18 microns, between the probe and the investigated samples with different dielectric constant when the rotation angle of the frame of the probe α=178°.

It follows from the presented results, the increase in the relative dielectric permittivity of the samples from 1 to 11.7 leads to a frequency shift of the resonance curve at -3,0 MHz, while the magnitude of the reflection coefficient in the minimum resonance curve changes from -60,8 dB to -31,1 dB.

In the inset of Fig.3 shows the dependences of the reflection coefficient of the microwave wavelength, measured at various fixed frequencies in the neighborhood of the minimum of the reflection coefficient, the value of the dielectric constant of the samples placed at a fixed distance near the probe tip.

It follows from the presented results, the selection frequency of the probing radiation can be obtained as a monotonically increasing (curve 20 in the inset of Fig.3) or monotonically decreasing (curve 22) dependence of the reflection coefficient of the high frequency waves from the magnitude of the dielectric constant of the samples, and non-monotonic dependence (curve 21).

When selecting the frequency corresponding to the minimum adjusted the rate reflected in the absence of a measured sample, the range of variation of reflection coefficient with a variable dielectric constant and maximum is ~39,6 dB. The measured sensitivity ∂S11/∂ε monotonically decreases with increasing values of ε in the range from 1 to 11.7. The range of values ε=1÷2 value ∂S11/∂ε is '29,7 dB/ε, and resolution Δε/ε reaches a value of ~10-4.

The established regularities allow to realize the possibility of determining the dielectric constant of the sample with high spatial resolution using blizhnepolevoi probe in the form of a resonator with the framework element of communication, United with a segment of the waveguide of the photonic crystal with a violation of the frequency, the measured value of the reflected signal when placing the investigated dielectric sample at a fixed distance near the probe tip.

Analyzed the resonance system can also be used to measure samples in the form of a dielectric paligorova) plates coated with nanometer metal layers of different thickness.

As noted above, the change of the reflection coefficient of the high frequency waves from the probe when approaching the tip of the probe sample is due to the change in the input impedance of the probe, the value of which is determined by ELEH the electro physical characteristics of the samples, significantly different for dielectrics with different values of dielectric permittivity and structures with thin metal layers. However, there may be a situation where for the selected parameters of the resonant system is the increase in one controlled parameter, such as the dielectric permittivity of the samples without conductive inclusions leads to a monotonic change in the selected frequency range of the reflection coefficient of the high frequency waves from the probe, and the change in the thickness of the conductive layer in the structures of the metal-insulator leads to a nonmonotonic change of the reflection coefficient of the high frequency waves from the probe.

To ensure monotonic changes and increase the sensitivity of the reflection coefficient of the high frequency waves to change the thickness of nanometer metal layer in the structure of the metal-insulator was carried out setting the resonant system is the choice of the rotation angle α of the frame of the measuring probe and a corresponding change in the parameters of the photonic crystal.

As the angle of rotation of the frame of the probe was chosen angle α=104°, which for a fixed gap, equal to 18 microns, between the probe and a test specimen in the form of paligorova plate without metal layer has reached the minimum value of the reflection coefficient equal to -46,6 dB. At this resonant frequency is Thoth, corresponding to the minimum of the reflection coefficient was 10,779 GHz.

In Fig.4 presents the results of measurements of the frequency dependence of the reflection coefficient of the microwave wavelength in the vicinity of the resonance frequency at a fixed gap, equal to 18 microns, between the probe and the investigated samples with different thickness of nanometer metal layer (Cr) in the structure of the metal-insulator when the rotation angle of the frame of the probe α=104°.

The thickness of the deposited nanometric metal layers were measured by atomic-force microscope AFM5600 Agilent Technologies.

It follows from the presented results, the increase in the thickness of nanometer metal layer (Cr) from 1 nm to 180 nm leads to a change in the magnitude of the reflection coefficient in the minimum resonance curve from -46,6 dB to -39,1 dB.

In the inset of Fig.4 shows the dependences of the reflection coefficient of the microwave wavelength, measured at various fixed frequencies in the neighborhood of the minimum of the reflection coefficient, the thickness of nanometer metal layer on paligorova plates placed at a fixed distance near the probe tip.

It follows from the presented results, the selection frequency of the probing radiation can be obtained as a monotonically increasing (curve 30 in the inset of Fig.4) or monotonically decreasing (curve 32) dependence of the OTP is the supply of UHF waves on the thickness of nanometer metal layer, printed on paligorova plate, and a non-monotonous dependence (curve 31).

When selecting the frequency corresponding to the minimum of the reflection coefficient for a fixed gap, equal to 18 microns, between the probe and a test specimen in the form of paligorova plate without metal layer, the range of variation of the reflection coefficient and maximum is ~16,5 dB. The measured sensitivity ∂S11/∂d monotonically decreases with increasing thickness of the metal layer (Cr) d in the range from 1 nm to 180 nm. In the range of values of d from 1 nm to 3 nm, the value of ∂S11/∂d is '4,0 dB/nm, and the resolution ∆ D/d reaches a value of ~10-3. When measuring TaAlN film deposited on paligorova substrate, the sensitivity ∂S11/∂d is 1.35 dB/nm in the range of values of d from 1 nm to 20 nm.

The established regularities allow to realize the control of nanometer thicknesses of the metal layers deposited on a dielectric plate with high spatial resolution using blizhnepolevoi probe in the form of a resonator with the framework element of communication, United with a segment of the waveguide of the photonic crystal with a violation of the frequency, the measured value of the reflected signal when placing the structures of the metal-insulator at a fixed distance the AI near the probe tip.

A device for determining parameters of metal-dielectric structures with waveguide system, connected with a cylindrical cavity in the housing bore which is located a coupling element, wherein the coupling element is a measuring and manufactured in the form of an adjustable quarter-wave frame, one end of which is connected to the housing of the cylindrical resonator, and the other is made in the form of points, placed in a dielectric insert is placed in the housing bore of the cylindrical cavity and protruding beyond the outer boundaries of the cavity by an amount much less than the length of the standing electromagnetic wave of the main types of cylindrical resonator; the device includes an additional coupling element, intended for input/output electromagnetic radiation in the microwave range, made in the form of two interconnected to one end of quarter-wave metal frames, placed in a dielectric insert located in the bore between volnovatsa system and the housing cylindrical cavity, and the first frame is configured to rotate its plane and is located in the internal cavity of the cylindrical resonator, and the second in volnovatsa system, the other ends of the framework is connected to the housing cylindrical cavity and volnovatsa system COO is responsible; in volnovatsa system hosted a one-dimensional waveguide microwave photonic crystal, which is a periodically alternating layers of two types of layers of the first type have a constant value of the relative permittivity, a much larger unit, layers of the second type is close to unity, the total number of layers and number of layers of the second type is odd in the extreme structure of the photonic crystal layers are of the first type, the thickness of the layers of the first type is much less than the thickness of the layers of the second type, the sum of the electrical lengths of the layers of the first and the second type is equal to half of the wavelength of electromagnetic waves corresponding to the middle of the used frequency range, the thickness of the Central layer of the photonic crystal is one-fourth the thickness of the layer of the second type.



 

Same patents:

FIELD: measurement equipment.

SUBSTANCE: method involves force action on the surface of a test object, recording of a set of electrical signals of input information with the information sensors installed on the test object; signals of the information sensors are determined with changes in force action on the surface of the test object. A use is made of information sensors installed on the test object and receiving changes in parameters of the test object, electronic filters to increase signal-to-noise ratio, which are connected to the outputs of the sensors and connected to the inputs of an electronic analogue circuit implementing a neural network model of reliable operation of the test object; with that, to another group of inputs of the electronic analogue circuit there connected is a unit for supply of a signal for retraining of a model with wears, and to its output there in-series connected is approximation unit of time dependences of sets of electrical signals, a shaping unit of time series of forecasts of reliable operation of the test object, an extrapolation unit of the value of the set of electrical signals at the output of the electronic analogue circuit till a limit value and determination of residual life, to the input of which an extrapolation model setting unit is connected.

EFFECT: improving reliability of forecast results; improving flexibility of the method and enlarging its application scope.

3 cl, 3 dwg

FIELD: measurement equipment.

SUBSTANCE: system of localised control of combustible gas leaks by primary parameters of measuring devices includes stationary sensors-gas analysers of combustible gases, an automatic control system, comprising a unit of sound and light alarm, a unit of control of sensors-gas analysers. The system additionally includes a unit of automatic switching of gas supply from the main process line into a reserve one and back, air-conducting boxes with a common swirler, where air is injected with required parameters from an air blowing plant, making it possible to move a gas leak in a certain direction to serially arranged sensors-gas analysers, which will make it possible with a sufficient extent of accuracy to determine local arrangement of the available leak in the shortest possible time from the moment of its formation.

EFFECT: increased safety, timely, efficient and effective detection of a local leak point, reduced risk of gas concentration formation in the air.

2 dwg

FIELD: testing equipment.

SUBSTANCE: invention relates to the field of non-destructive control of materials and substances, measurement of statistic characteristics of random processes. A device to control materials and substances comprises serially connected a source of physical field, an element with a control object, a converter of physical field, and also the first and second conversion circuit, each of which comprises serially connected an accumulating averaging summator and a count block, at the same time the outlet of the first circuit is connected to the first inlet of a computing device, and the outlet of the second circuit is connected to the second inlet of the computing device, the first outlet of which is connected to inlets of strobing of accumulating averaging summators combined into a bus "Measurement time", the first multiplier, the first analogue-digital converter and the second analogue-digital converter, the second multiplier, the first controlled frequency multiplier, serially connected the second controlled frequency multiplier and the controlled phase changer, the outlet of which is connected to the second inlet of the second multiplier, the outlet of which is connected to the inlet of the second analogue-digital converter, and the first inlet of the multiplier is combined with the first inlet of the first multiplier and is connected to the outlet of the first controlled frequency multiplier, the inlet of which is connected to the outlet of the physical field converter, and the outlet of the source of physical field is connected to the inlet of the second controlled frequency multiplier, the outlet of which is connected to the second inlet of the first multiplier, the outlet of which is connected to the inlet of the first analogue-digital converter, in which the outlet is connected to the inlet of the first circuit of conversion, and the inlet of the second conversion circuit is connected to the outlet of the second analogue-digital converter, besides, control inlets of the first and second controlled frequency multiplier and controlled phase changer are combined into a bus "Plant Vm" and are connected to the second outlet of the computing device.

EFFECT: simplification of a circuit of a device for control of quality of materials and substances.

3 dwg

FIELD: instrumentation.

SUBSTANCE: invention relates to facilities for monitoring of injury treatment process. A monitoring device comprises a unit of injury nitrogen oxide level monitoring, a unit of controlling signal generation by means of comparison of a nitrogen oxide level with preset threshold and unit of correction of light dosing for injury treatment, at the same time the monitoring unit is designed to detect magnetic field produced as a result of transition from Fe2+ into Fe3+, production of Fe3+ level in accordance with magnetic field, calculation of met Hb level in accordance with the level of Fe3+ and calculation of nitrogen oxide level in accordance with proportionate ratio between the level of met Hb and level of nitrogen oxide. The injury treatment device comprises several sources of light and a monitoring device.

EFFECT: using this invention makes it possible to correct treatment dose more accurately and conveniently, with minimum side effects.

7 cl, 4 dwg

FIELD: chemistry.

SUBSTANCE: invention relates to means of efficient detection of poisoning substances and toxins and their instant neutralisation. Device contains microprocessor sets of first 16 and second 22 order, unit of template memory 17, units for detection of poisoning substances and toxins, audio-video system, and units of detection of poisoning substances and toxins are made in form of absorbing devices 3-7, which have sensors at outlet, which determine level of air environment contamination, outlets of sensors are connected to amplifiers-converters 11-15, connected with outlets-inlets with microprocessor set of first order 16, which is connected by outlets-inlets to unit of template memory 17, unit of question introduction 18 and microprocessor set of second order 22, unit of template memory 17 is connected by inlets-outlets to matrix field 21 in form of based on liquid crystals diode crystal lattice, unit of question introduction 18 is connected by inlets-outlets with unit of response analysis 19 and unit of analysis of unknown chemical compounds and combinations of poisoning substances 20, which is connected by inlets-outlets to unit of response analysis and to matrix field 21, connected with inlets-outlets of unit of question introduction 18 and to microprocessor set of second order 22, connected by inlets-outlets with hazard warning unit 23, unit of analysis of unknown chemical compounds and combinations of poisoning substances 20, matrix field 21 and unit of executive device 24 for neutralisation of poisoning substances and toxins, which is connected by outlets with executive mechanisms 25-27.

EFFECT: possibility of determining concentration of toxic materials and their neutralisation in the shortest terms and instant warning of people about hazard, ie maximally possible protection of people against impact of different toxins.

3 dwg

FIELD: transport.

SUBSTANCE: method for determination of pipeline technical condition consists in technical condition integral characteristic quantitative evaluation from which pipeline state is evaluated and corresponding corrective measures are planned. To determine mentioned integral characteristic in-line inspection (ILI) and integrated corrosive survey of pipeline is performed. From results of ILI, proportion factor between technical condition characteristic and relative quantity of defective pipes is established depending on pipeline diameter. Pipeline integrated corrosive survey is performed by measuring electric current from external source along pipeline route with interval not exceeding 10 m. According to obtained data, proportion factor between relative quantity of defective pipes and relative length of damaged protective coating. From determined parameters, technical condition integral characteristic is determined which describes pipeline damage.

EFFECT: higher quality of pipeline reconstruction, repair and technical diagnosis planning.

1 tbl, 2 dwg

FIELD: nanotechnologies.

SUBSTANCE: bombardment of a surface with an ion beam and recording of intensity of reflected ions is performed; besides, analysed surface is bombarded with inert gas ions with energy of less than 100 eV, and energy spectrum of reflected ions is recorded in the energy range, which is higher than energy of primary ions; then, as per energies of peaks of pair collision in the obtained spectrum there determined are types of atoms in one upper monolayer of atoms, as per the available peak with energy equal to energy of bombarding ions there evaluated is availability of a crystalline phase on amorphous or amorphised surface, including in a film of nanodimensional thickness, and as per the ratio of values of the above peak without any energy losses to a peak or peaks of pair collision there determined is surface concentration of crystalline phase on amorphous or amorphised surface.

EFFECT: reduction of depth of an analysed layer till sub-nanodimensional values; improvement of reliability of analysis results and enhancement of compatibility of equipment for implementation of the method with other analysis methods and process equipment.

2 dwg

FIELD: measurement equipment.

SUBSTANCE: use: to measure change in the local concentration of impurities in the liquid flow at the entrance to the measuring cell. The substance is that the first change of impurity concentration is determined in time within the measurement cell to the fluid containing an impurity, wherein the concentration changes with time at the entrance of the measuring cell is known, and they find the impulse response of the measuring cell using the deconvolution method. Then they determine the change in the impurity concentration within the measuring cell for the sample liquid with an unknown impurity concentration at the entrance. They calculate the unknown concentration of impurities upon entering the measuring cell using the found impulse response of the measuring cell and a definite change in the impurity concentration inside the cell.

EFFECT: improving the accuracy of determining concentration of impurities without changing configuration of a measuring cell.

8 cl, 5 dwg

FIELD: radio engineering, communication.

SUBSTANCE: offshore hydrophysical system has a rigid support structure which joins self-contained geophysical units, each performing a specific measuring or synchronising function, enclosed in separate pressure-resistant housings, wherein each pressure-resistant housing is equipped with a radio-frequency receive/transmit modem, mounted inside the housing on an insert which is transparent for electromagnetic radiation.

EFFECT: high reliability of offshore measuring devices, easier operation thereof and unification of offshore measuring equipment.

1 dwg

FIELD: mining.

SUBSTANCE: device includes a loading device, comprising a metal body connected with a grounded base, a recording system comprising amplifiers, an analogue-to-digital transducer, a computer and screened cables. At the same time the loading device comprises a rock-breaking tool installed on a drilling machine, and a system of axial load supply comprising the following serially connected component: a pulley of axial load feed, a system of blocks and a system for suspension of weights installed on the frame. Also the device comprises a closed circulation system for bottomhole cleaning and cooling of the rock-breaking tool, a recording system comprising a pressure gauge, a phototach, a vibration sensor, a channel for registration of a permanent component of current and a channel for recording of an alternating component of current. The method includes installation of a sample in a clamp, deformation of a sample with the help of a loading device, registration of an arising electromagnet signal with a registration system. At the same time, setting experiment parameters, the initial and final positions of the axial load feed system are marked, accordingly at the start and end of the experiment, a boring pump motor is switched on, power is supplied to a three-phase transformer, from which power is then sent to a motor of a drilling machine, the rock-breaking tool is put in contact with the sample, and the required axial load is set, frequency of rock-breaking tool rotation is fixed by the phototach, pressure of the flushing liquid is recorded with the pressure gauge, plant oscillations are fixed by a vibration sensor, and along the channels for DC and AC the generated electromagnetic radiation is detected.

EFFECT: possibility to imitate loading of a sample with drilling, with variation of the experiment mode, under permanent registration of electromagnetic radiation parameters in process of sample damage, in the form of permanent and alternating components of current, and also the value applied to the load sample.

2 cl, 7 dwg

FIELD: thermal and nuclear power stations; meter calibration in extremely pure water of condensate type and power unit feedwater.

SUBSTANCE: for pH-meter calibration ammonia whose concentration varies by 1.5 - 2 times is dosed in working medium. Electric conductivity and temperature of working-medium H-cationized sample are measured. Measurement results are processed in computer with aid of set of equations characterizing ionic equilibrium in source sample and H-cationized samples. Calculated pH value is compared with measurement results.

EFFECT: enhanced precision and reliability of meter calibration in extremely pure waters.

1 cl, 1 dwg, 1 tbl

FIELD: mechanical engineering.

SUBSTANCE: device has housing provided with three cylinders made of a dielectric material. The housing receives the cylinder with a piston.

EFFECT: improved design.

5 dwg

FIELD: agriculture and soil science; evaluating water-physics properties of soils.

SUBSTANCE: porous probe communicating with water-filled tank is driven into soil, cathode is inserted in probe and anode, in soil. Voltage is applied to electrodes from dc power supply and soil moisture potential preventing water transfer from tank to soil is determined by measuring current between them.

EFFECT: reduced single measurement time due to eliminating escape of significant amount of water from measuring instrument.

1 cl, 1 ex

FIELD: investigating or analyzing materials.

SUBSTANCE: device comprises measuring section made of dielectric pipe whose inner diameter is equal to the inner diameter of the pipeline, two electrodes which form a capacitor made of segments of the dielectric pipe, mounted diametrically opposite, and connected with the electronic unit. The electronic unit has a self-excited oscillator whose frequency-generating circuit includes the capacitor and device for processing frequencies with the indicator. The electrodes are arranged inside the dielectric pipe of the measuring section. The transverse length of each electrode can be greater than half inner diameter of the pipeline. The longitudinal length of each electrode may not exceed half length of the dielectric pipe.

EFFECT: enhanced sensitivity.

2 cl, 1 dwg

FIELD: analytical methods.

SUBSTANCE: electrodes of piezoelectric resonator are modified with menthol phenyl salicylate vaseline oil, recommended solvent being toluene, modifier film weight 5-20 μg, drying temperature 20-35°C, and drying time 40-48 h. The following gains in aromatic amine determination sensitivity are thus obtained: for aniline, from 282 to 368 Hz-m3/g; for o-tolidine, from 68 to 78 Hz-m3/g; for 9-nitroaniline, from 136 to 125 Hz-m3/g. Reductions in relative deviation are, respectively, 6.0 to 3.2%, 7.0 to 3.6%, and 6.0 to 4.3%, sensor response time is decreased by 5 times, regeneration time is decreased by 24 times, and aniline detection threshold is lowered from 0.84 to 0.11 Δ, g/m3.

EFFECT: increased sensitivity and accuracy of determination.

1 dwg, 2 tbl, 11 ex

FIELD: scanning probe microscopy.

SUBSTANCE: scanning probe microscope has sample holder, first platform, onto which case is mounted, and piezoscanner. Elastic membrane is placed between case and piezoscanner. There is unit for preliminary bringing sample and probe together, as well as housing and probe fixer. The second platform is introduced into the scanner, onto which unit for preliminary bringing sample and probe together. Base and sample holder is put together with cup by means of first hole and the second hole. Second hole is connected with inert gas source. Cup is made of chemically-proof material. Case is made to be air-proof. Locker of the probe is fastened to piezoscanner. Housing is mounted onto cup for interaction with airtight case. Aerostatic plain bearing is formed between housing and airtight case. Sample holder, cup, housing, airtight case, elastic membrane and probe locker form all together closed cavity of electrochemical cell.

EFFECT: simplified exploitation; widened operational abilities.

11 cl, 7 dwg

FIELD: measurement technology.

SUBSTANCE: detector can be used in concentration meters as positive and negative aeroiones. Aeroion concentration detector has bias voltage source and receiving probe. Detector additionally has two resistors connected in series, auxiliary electrode and electrometer for measuring output voltage that is proportional to measured concentration of aeroiones. Receiving probe has to be volumetric electrode made of metal grid inside which the auxiliary electrode is located. The latter is isolated from volumetric electrode.

EFFECT: improved functional abilities.

1 dwg

FIELD: mining industry.

SUBSTANCE: method includes mounting a sample between panels of capacitor converter of electromagnetic radiation, deforming thereof in loading device. Loading device has oppositely mounted in metallic body of loading device metallic rods, force detector and registration system. Compressing external force is applied to sample from first metallic rod through force detector body and it is destroyed due to reaction force of conic indenter of second metallic rod. Metallic body of loading device is a first plate of capacitor converter, second plate - second metallic rod, mounted in bushing of dielectric material, placed in metallic body. Stand has screen, frame, capacitor converter, loading device, force detector and registration system. Between ends of metallic rods force detector and sample are positioned. Second metallic rod is provided with conic indenter.

EFFECT: higher efficiency.

2 cl, 2 dwg

Antioxidant sensor // 2263904

FIELD: analytical chemistry.

SUBSTANCE: sensor can be used for inspecting level of oxidants and antioxidants in liquid. Device for detecting absence or presence of reduction-oxidation reactive-capable analyzed matter in water sample has electro-chemical cell with sensor chamber, first and second electrodes, hole for introducing sample into sensor chamber and reagent placed inside sensor chamber. Electro-chemical cell is designed to be removable after usage in any unique experiment. Reagent is capable of subjecting to reduction-oxidation reaction directly with analyzed matter to generate electric signal indicating absence or presence of analyzed matter. Method of detecting level of reduction-oxidation reaction-capable matter is also proposed as well as method of measurement of sulfur dioxide in sample of vine and method of producing device mentioned before.

EFFECT: improved precision.

36 cl, 4 dwg

FIELD: measurement technology; criminology.

SUBSTANCE: main and ancillary electrodes are installed before procedure of getting imprints of dust trace. Voltage applied to main and ancillary electrodes is regulated within wide high-voltage range. Device for getting imprints of dust traces has electric charge storage, main and ancillary electrodes and connecting cable of ancillary electrode, mechanical unit driven into action by muscle force of expert. Mechanical unit is connected with mechanical energy/electric energy converter which is connected with electric charge storage. Main electrode is coated with insulating dielectric film and connected with electric charge storage.

EFFECT: improved exploitation characteristics; independence on external electric power sources; reduced chance of electric current shock.

2 cl, 2 dwg

Up!