Method for obtaining nanodimensional films of bi-containing ferrites-garnets
SUBSTANCE: invention relates to a technology for obtaining films of ferrites-garnets and can be used in application magneto-optics to obtain magneto-optic disks, modulators and deflectors. The method involves manufacture of a target of the specified composition, treatment of a monocrystalline substrate of gallium garnet with argon ions, spraying of the target onto the substrate with further annealing of the obtained film; with that, a substrate of complex replaced gallium garnet is used; the spraying process is performed onto the substrate heated up to 800-850°C; controlled oxygen ion flow is supplied to the substrate areas during the spraying process, and the obtained films are annealed in oxygen environment during 0.5-1.0 hour at the temperature of 700-750°C and normal atmospheric pressure.
EFFECT: invention allows improving quality of obtained nanodimensional films of Bi-containing ferrites-garnets, as well as a value of specific faraday rotation.
1 tbl, 1 ex
The invention relates to the technology for the garnet ferrite film and can be used in an applied magneto-optics to obtain a magneto-optical disk, modulators, deflectors, etc.
A method of obtaining polycrystalline garnet ferrite film containing Bi, by magnetron sputtering on a substrate of gadolinium-gallium garnet (see Starostin J.V., Nikolaev E.N., The Pesin V.S., Kochetkov V.V. and other Spraying parameters films of ferrite garnet films for magneto-optical disks. Inorganic materials. - 1993. 32, No. 7. - S-991). The method includes the production targets set compositions, magnetron sputtering on a substrate with subsequent annealing of the films obtained under oxygen atmosphere for one hour. The disadvantage of this method is the inability to obtain nanoscale films.
Closest to the proposed is a Method of producing nanoscale films of ferrite-garnet containing Bi" (see: patent of Ukraine # 66219. Prokopov A.R., Shaposhnikov A.N., Caramanico AV "Method of producing nanoscale films of ferrite-garnet containing Bi". Bull. No. 24, 2011). The method includes producing a target for a given composition, processing monocrystalline substrate by argon ions, sputtering components of the target on a substrate and annealing in air at atmospheric pressure. The disadvantage of this with the person - the essential difference between the composition of the films obtained from the composition of the initial target, the nonstoichiometry of the obtained films.
The purpose of the present invention is to improve the quality of the obtained films of Bi-containing high-TC superconductors, the increase of the specific Faraday rotation.
This goal is achieved by the fact that in the proposed method of producing nanoscale films of Bi-containing high-TC superconductors, including the production targets of a given composition, the processing of monocrystalline gallium garnet substrate by argon ions, the sputtering target onto the substrate with further annealing of the films obtained in accordance with the proposed technical solution is used, the substrate lonesomedove gallium garnet with high value of the lattice parameter, ion sputtering and heating of the substrate during deposition of a film up to 800-850°C, flow in the area of the substrate of the controlled flow of oxygen and annealing of the obtained films of oxygen for 0.5 to 1.0 hour in an atmosphere of oxygen at a temperature of 700-750°C at normal atmospheric pressure.
The essence of the proposed method lies in the fact that the use of a heated substrate, flow in the region of the substrate controlled flow of oxygen ions and subsequent annealing of the obtained structures in the atmosphere of oxygen at normal atmospheric pressure can significantly improve the ka is estvo received nanoscale films of Bi-containing high-TC superconductors, in particular, to reduce the nonstoichiometry, substantially reduce the variance of the composition of the resulting film as compared with the composition of the target. Use lonesomedove gallium garnet as the substrate due to the high values of the lattice parameter allows to obtain a high concentration of ions Bi3+(2.5-2.8 forms, units) in the crystal lattice and to achieve high values of the specific Faraday rotation.
The method is implemented as follows. Made a target of the desired composition of the Bi-containing ferrite-garnet (the content of Bi3+- 2.5-2.8 forms. units). Monocrystalline substrate lonesomedove gallium garnet (e.g.: (GdCa)3(GaMgZr)5O12Ca3(NbGaMg)5O12Ca3(GaNbZr)5O12and others; this type of substrate is selected with the purpose of entering into the lattice of the film as much as possible the concentration of ions Bi3+to increase the specific Faraday rotation) is treated by argon ions of energy of 10-20 eV. In the vacuum chamber reaches a pressure (about 6.5-6.8)·10-4PA and produce with a platinum heater heating the substrate to a temperature of 800-850°C. Next, produce a precipitation of the target material on a substrate by sputtering with argon beam ion source (the current density of the ion beam j=8 to 12 mA/cm2the ion energy E=1-3 Kev). With the purpose of is lahcene crystallization of stoichiometric film of Bi-containing ferrite-garnet in the region of the substrate supplied by the ion source controlled flow of oxygen ions. The required film thickness is governed by the time of spraying. The resulting structure is placed in a furnace and annealed in oxygen atmosphere at a temperature of 700-750°C under normal atmospheric pressure.
An example implementation of the method.
1. Using ceramic technology was preparing the target composition of Bi2,7Lufor 0.3Fe3,9Ga1,1O12. The diameter of the target was 100 mm as substrates were used monocrystalline plate-substrate composition of Ca3(GaNbZr)5O12. The process of obtaining nanoscale Bi-containing film of the composition was carried out in a vacuum unit, based on the installation of the IOC 3279026. In the vacuum chamber reached pressure (about 6.5-6.8)·10 PA, and then perform the processing of the substrate by argon ions of energy of 10-20 eV. Next were made with a platinum heater heating the substrate to a temperature of 850°C, after which he carried out the deposition of the target material on a substrate by sputtering with argon beam ion source (the current density of the ion beam j=8 to 12 mA/cm2the ion energy E=1-3 Kev). In order to facilitate crystallization of stoichiometric film of Bi-containing ferrite-garnet in the area of the substrate was applied using an ion source controlled flows of the oxygen ion. The obtained films were annealed in the kiln yttrium garnets T-1 five-2.983.003 JV oxygen atmosphere at a temperature of 750°C and normal atmospheric pressure. After natural cooling installations for the roasting to room temperature, the obtained film was washed in distilled and deionized water. Thus were prepared with 5 films.
The results of x-ray diffraction studies showed that the obtained nano-films are single crystalline. The thickness of the transition layer 3-6 nm, the thickness of the films 33-47 nm.
According to x-ray analysis, the concentration of bismuth ions in the obtained films ranged from 2.6 forms. units to 2.72 forms. units
The table shows the main characteristics of the obtained nano-film of Bi-containing garnets.
|Characteristics obtained by ion beam sputtering nanoscale films of Bi2,7Lufor 0.3Fe3,9Ga1,1O12(WLPG)|
|№ p/p||Number patterns||The firing temperature T, °C||The film thickness WLPG||The specific Faraday rotation θF , deg/cm (λ=0,633 µm)||The saturation magnetization, Ms, HS||Field effective anisotropy of HToE|
|1||1-1||700||33,00||54 100||280||4 300|
|2||3-2||715||37,00||54 900||270||4 450|
|3||4-5||730||42,00||55 250||250||4 280|
|4||6-3||750||45,00||55 600||295||4 290|
Thus, the proposed method has the following distinctive features:
1. Used monocrystalline substrate lonesomedove gallium garnet.
2. Is heated substrate to a temperature of 800-850°C.
3. Used during the spraying process flow in the region mean the LCD controlled flow of oxygen ions.
4. The resulting film is annealed in oxygen for 0.5-1.0 hour at a temperature of 700-750°C and normal atmospheric pressure.
The use of these distinctive characteristics to achieve the obtained results the authors do not know.
Method of producing nanoscale films of Bi-containing high-TC superconductors, including the production targets of a given composition, the processing of monocrystalline gallium garnet substrate by argon ions, the sputtering target onto the substrate with further annealing the resulting film, characterized in that the substrate used lonesomedove gallium garnet, the process of dispersion is heated to a temperature of 800-850°C substrate during the spraying process is supplied in the region of the substrate controlled flow of oxygen ions, and the resulting film is annealed in oxygen atmosphere for 0.5-1.0 hour at a temperature of 700-750°C and normal atmospheric pressure.
FIELD: physics, optics.
SUBSTANCE: group of inventions relates to producing a terbium aluminium garnet monocrystal which can be used as a Faraday rotator for optical insulators. In the terbium aluminium garnet monocrystal, a portion of aluminium is at least replaced with scandium and a portion of at least aluminium or terbium is replaced with at least one component selected from a group consisting of thulium, ytterbium and yttrium, wherein the garnet monocrystal has the general formula (Tb3-x-zSczMx) (Sc2-yMy) Al3O12 (1), where M represents at least one component selected from a group consisting of Tm, Yb and Y, and x, y and z satisfy the following relationship: 0<x+y≤0.30 and 0≤z≤0.30.
EFFECT: present monocrystal has a high light transmission factor in a wide wavelength range and a wide Faraday rotation angle with cracking-resistance.
8 cl, 3 dwg, 1 tbl, 12 ex
FIELD: physics, optics.
SUBSTANCE: invention relates to the technology of producing a terbium aluminium garnet single crystal which can be used as a polarisation rotator (Faraday rotator) in optics. The single crystal is a terbium aluminium garnet single crystal in which part of the aluminium is replaced with lutetium (Lu) and which has the following chemical formula:
EFFECT: invention increases the size of obtained crystals.
10 cl, 9 dwg, 4 ex
SUBSTANCE: magnetooptic material is an epitaxial monocrystalline film of iron garnet of the composition (YBi)3(FeGa)5O12, which is grown on a substrate of nonmagnetic garnet with a high lattice constant
EFFECT: obtaining high-contrast images by thermomagnetic recording.
2 cl, 2 tbl, 3 dwg, 4 ex
SUBSTANCE: proposed method consists in precipitation at introduction of starting compounds of aluminium, yttrium and alloying agents in arrester to extract precipitated product and to calcine obtained powder at 1100°C. Note here that precipitation is performed in the presence of fluorine-bearing additive taken in amount corresponding to 1-5% content of fluorine atoms relative to amount of arrester. Arrester represents ammonium bicarbonate. Mixed aqueous solution of aluminium, yttrium and alloying element nitrates are added to said bicarbonate in amount corresponding to molar ratio of ammonium bicarbonate to total amount of metal cations equal to 3.6:1. Thereafter, obtained mix is mixed at the rate of 300-500 rpm to flush precipitated product, to dry is at 100-150°C and to calcine it.
EFFECT: higher efficiency and quality.
5 cl, 1 tbl, 2 ex
SUBSTANCE: method of growing YAG doped with vanadium consists in crystal growing by vertically directed crystallisation in molybdenum crucible in reduction atmosphere of argon with hydrogen and using charge that ensures vanadium content on grown crystal varying from 1 to 5 atom percent. Note here that batch composition is defined by general formula Y3Al5(1-0.01x)V0.05xO12, where x is atom percent in octahedral and tetrahedral positions of crystal lattice.
EFFECT: simplified process.
1 dwg, 1 ex
SUBSTANCE: connection method of parts from refractory oxides involves polishing of attached surfaces, their alignment and heating. A layer of material forming solid solution at least with one of materials of the attached parts is applied at least to one of the polished attached surfaces. Melting temperature of solid solution is lower than melting temperature of each of the materials of the attached parts. After that, aligned parts are annealed at the temperature above solid solution formation temperature.
EFFECT: invention allows connecting parts from refractory oxides, reducing losses for dissipation of optic emission, heat and sound owing to diffusion of an optic boundary.
SUBSTANCE: invention relates to field of obtaining ceramics. Claimed material contains matrix, made in form of solid solution of scandium oxide in yttrium oxide with composition Y1-xScxO1.5, where x=0.25-0.35, and filler, made in form of solid solution of scandium oxide in yttrium-aluminium garnet with composition Y3-3zAl5-5zSc8zO12, where z=0.20-0.45, with material containing matrix in amount 80-90 wt % and filler in amount 20-10 wt %. Described is method of material obtaining, which includes mixing of preliminarily obtained matrix with preliminarily obtained filler, mixture formation and thermal processing.
EFFECT: invention ensures obtaining material with high exploitation characteristics, light-permeability, thermal resistance, heat conductivity, dielectric permeability and strength by simple method of synthesis.
4 cl, 1 ex
SUBSTANCE: proposed laser material features garnet structure R3T5O12, where R is ions selected from the group Y, La, Ce, Gd, Sc, Lu; T is ions selected from the group Al, Ga, Sc, Lu. Laser material comprises ion of trivalent hafnium as activator. Activator concentration varies from 0.05 to 5 % by weight in terms of hafnium dioxide in excess of garnet stoichiometric formula. Said laser material can represent an optical ceramic, monocrystal or monocrystalline film.
EFFECT: garnet structure laser material that features high heat conductivity and resistance, long stability and can generate readjustable laser radiation.
4 cl, 2 dwg
SUBSTANCE: laser material has a garnet structure R3T5O12. R denotes ions selected from Y, La, Ce, Gd, Sc, Lu. T denotes ions selected from Al, Ga, Sc, Lu. The laser material contains active ions of trivalent neodymium and a sensitising agent. The sensitising agent used is at least one ion selected from a group of trivalent ions of titanium, zirconium and hafnium.
EFFECT: increased thermal conductivity, heat resistance, efficiency and stability of the laser material with garnet structure, activated with neodymium ions.
4 cl, 2 dwg, 6 ex
SUBSTANCE: oxide scintillation monocrystals are designed for devices for X-ray computed tomography inspection through illumination with radiation. A Pr-containing monocrystal based on fluorides, specifically a Pr-containing oxide monocrystal of the garnet type, a Pr-containing oxide monocrystal of the perovskite type and a Pr-containing monocrystal of the silicate oxide type, as well as a Pr-containing rare-earth metal oxide monocrystal are proposed.
EFFECT: scintillation monocrystals have high density, high level of optical emission, short mean life and low cost of production.
39 cl, 18 ex, 43 dwg
SUBSTANCE: diamond-like coatings are produced in vacuum by spraying of target material with an impulse laser. The target material made of graphite of high degree of purity (more than 99.9%) is exposed to combined laser radiation: first short-wave (less than 300 nm) pulse radiation, the source of which is a KrF-laser with wavelength of 248 nm and specific energy of 5·107 W/cm2, as a result of which ablation is carried out, and gas-plasma phase of target material is generated. Subsequent exposure of a gas-plasma cloud during cloud flight from a target to a substrate is carried out by long-wave (more than 1 mcm) laser radiation. The source of long-wave laser radiation is a gas CO2-laser or a solid-state fibrous laser radiator.
EFFECT: increased diamond phase in a produced coating and increased energy spectrum of plasma at stage of its flight.
3 cl, 1 dwg
SUBSTANCE: method includes preparation of charge based on zinc selenide, its placing into reactor, vacuumisation to pressure 10-5-10-4 mm Hg, heating reactor evaporation zone to the temperature of evaporation, passing ZnSe vapour through filter with its following sedimentation on substrate which has the temperature lower than the evaporation temperature, and following cooling of reactor with half-finished product to room temperature; as charge applied is mixture of zinc selenide with elementary selenium with the following wt %: zinc selenide - 90-99, elementary selenium - 1-10, reactor evaporation zone is heated to the evaporation temperature of 1000-1200°C, cooling is carried out at rate 25-30°C/h.
EFFECT: invention makes it possible to obtain material with controlled stoichiometric ratio of elements and high optic quality of half-finished materials, which have low absorption in working range.
SUBSTANCE: monocrystalline films of a solid bismuth-antimony solution are obtained using zonal recrystallisation of vacuum sputtered, uniform-composition polycrystalline films of a solid bismuth-antimony solution under a protective coating, the melting point of which is higher than that of the obtained film, at a higher rate of zone movement than when growing bulk monocrystals (for films of solid bismuth-antimony solutions higher than 1 cm/h versus 0.05 mm/h for bulk crystals).
EFFECT: invention enables to obtain monocrystalline films of a solid bismuth-antimony solution with uniform volume distribution of components.
SUBSTANCE: composite optical material has a base in form of a transparent substrate wafer made from ZnSe, which is grown by chemical vapour deposition (CVD) whose polished surface is coated with a protective layer of ZnS, which is obtained by physical vapour deposition (PVD), wherein adhesion of the ZnSe substrate wafer to the protective layer of ZnS is provided by an optically transparent transition layer in form of a continuous row of solid solutions ZnSexS1-x, where x varies from 0 to 1, by interdiffusion of sulphur and selenium into the ZnSe and ZnS layers, respectively.
EFFECT: composite optical material ZnSe/ZnS has improved transparency in the visible and near spectral ranges, while preserving high mechanical strength of the ZnSe substrate, high adhesion of the ZnS layer to the substrate while maintaining microhardness value of the ZnS layer.
2 cl, 1 dwg, 1 ex
FIELD: electrical engineering.
SUBSTANCE: epitaxial films of (SiC)1-x(AlN)x solid solution where the x is more than 0 but less than 1, are produced by way of sedimenting a solid solution onto a monocrystal SiC-6H substrate at a temperature of 1000°C by way of magnetron ion plasma sputtering performed in an atmosphere of argon and nitrogen from a composite target representing a polycrystal silicon carbide disc the rear surface whereof is coated with a layer of chemically pure aluminium. Concentration of Si, C, Al atoms in sedimented films is regulated by way of measuring the area of the aluminium layer on the target surface while nitrogen concentration is regulated by way of changing the ratio of nitrogen pressure to overall pressure inside the sputtering chamber.
EFFECT: production technology simplification, produced films perfection and possibility to produce films of aide-zone solid solution within the whole compositions interval.
3 dwg, 1 ex
SUBSTANCE: crucible consists of graphite case 1 with granulated poly-crystal source 7, 8, of cover 12, of base 13 and substrate 11, 17. Removable graphite container 3 with through cylinder channel 4 and radial orifices 5 is located in a cavity of graphite case 1. Matrix 9 with orifices 10 and substrates 11 is arranged over the container. A cavity of container 3 is sealed with pad 16; cover 12 with a threaded orifice and nut 2. Base 13 with a blind orifice and substrate 17 set on its surface is screwed into a threaded orifice of cover 12. There are used pads of graphite foil - graphlex to reduce leaks of heat energy flow from the container to environment through the cover and bottom of the case, and also for sealing an internal cavity of the crucible from leaks of vapours of charge. The rest parts are made of graphite of high density produced by procedure of isostatic moulding (for example, of graphite of MPG-9N grade).
EFFECT: raised working efficiency, material saving, more accurate control of substrate temperature, fabrication of both mono-crystal ingot and hetero-structures in one process cycle.
2 cl, 1 dwg
SUBSTANCE: invention refers to the method for making bioactive calcium-phosphate coatings and can be used in manufacturing of orthopaedic and tooth prostheses. The method for making supported calcium-phosphate coating involves radio-frequency magnetron sputtering of hydroxyapatite target Ca10(PO4)6(OH)2 during 15-150 min with using argon as a working gas at pressure in a working chamber 0.1 Pa. The coating is settled over a support over a ring of magnetron cathode region, where field lines of magnetron magnetic field localise high-frequency plasma with maximal effect of charged particle on the support at specific power of high-frequency discharge 50 W cm-2 that provides formation of coating composition close to that of stoichiometric hydroxyapatite Ca10(PO4)6(OH)2.
EFFECT: application of the method ensures activation of coating crystallisation during growth with final phase formation that corresponds to composition of the target.
6 dwg, 3 ex
SUBSTANCE: invention concerns technology of obtaining multicomponent semiconductor materials and can be applied in electronic industry for obtaining semiconductor material, solid (SiC)1-x(AlN)x solution, in manufacturing of solid power or optic electronic devices based on it, in obtaining cushion (SiC)1-x(AlN)x layers for aluminum nitride (AlN) or gallium nitride (GaN) crystal cultivation on silicon carbide (SiC) substrate. Epitaxial films of solid solution of silicon carbide and aluminum nitride (SiC)1-x(AlN)XJ where 0<x<1, are obtained by sedimentation of solid solution to monocrystallic SiC-6H substrate at 1000°C via ion plasma magnetron sputtering of solid polycrystallic (SiC)1-x(AlN)x solution target, where 0<x<1, the sputtering performed under effect of alternate current with frequency of 13.56 MHz.
EFFECT: obtaining high-quality monocrystallic films in the whole range of chemical composition transformation and improved efficiency of high-resistance target sputtering.
1 ex, 3 dwg
FIELD: optical crystals growing.
SUBSTANCE: invention relates to technology of producing thin oxide monocrystalline films and may be used in optics. Thin monocrystalline film β-Ga2O3 is formed by growing it from gas phase on a substrate prepared from β-Ga2O3 monocrystal. Laser beam is directed to target to excite target atoms. Ga atoms release from the target under thermal and photochemical effects. Free Ga atoms bind to radicals of one or more chamber atmosphere gases to form β-Ga2O3 thin film on substrate. Invention also allows obtaining thin β-Ga2O3 and GaN films as well as high-quality ZnO monocrystals and provides light-emitting device capable of emitting light in UV region.
EFFECT: optimized monocrystal growing and film preparation conditions.
24 cl, 27 dwg