Method for obtaining nanodimensional films of bi-containing ferrites-garnets

FIELD: nanotechnologies.

SUBSTANCE: invention relates to a technology for obtaining films of ferrites-garnets and can be used in application magneto-optics to obtain magneto-optic disks, modulators and deflectors. The method involves manufacture of a target of the specified composition, treatment of a monocrystalline substrate of gallium garnet with argon ions, spraying of the target onto the substrate with further annealing of the obtained film; with that, a substrate of complex replaced gallium garnet is used; the spraying process is performed onto the substrate heated up to 800-850°C; controlled oxygen ion flow is supplied to the substrate areas during the spraying process, and the obtained films are annealed in oxygen environment during 0.5-1.0 hour at the temperature of 700-750°C and normal atmospheric pressure.

EFFECT: invention allows improving quality of obtained nanodimensional films of Bi-containing ferrites-garnets, as well as a value of specific faraday rotation.

1 tbl, 1 ex

 

The invention relates to the technology for the garnet ferrite film and can be used in an applied magneto-optics to obtain a magneto-optical disk, modulators, deflectors, etc.

A method of obtaining polycrystalline garnet ferrite film containing Bi, by magnetron sputtering on a substrate of gadolinium-gallium garnet (see Starostin J.V., Nikolaev E.N., The Pesin V.S., Kochetkov V.V. and other Spraying parameters films of ferrite garnet films for magneto-optical disks. Inorganic materials. - 1993. 32, No. 7. - S-991). The method includes the production targets set compositions, magnetron sputtering on a substrate with subsequent annealing of the films obtained under oxygen atmosphere for one hour. The disadvantage of this method is the inability to obtain nanoscale films.

Closest to the proposed is a Method of producing nanoscale films of ferrite-garnet containing Bi" (see: patent of Ukraine # 66219. Prokopov A.R., Shaposhnikov A.N., Caramanico AV "Method of producing nanoscale films of ferrite-garnet containing Bi". Bull. No. 24, 2011). The method includes producing a target for a given composition, processing monocrystalline substrate by argon ions, sputtering components of the target on a substrate and annealing in air at atmospheric pressure. The disadvantage of this with the person - the essential difference between the composition of the films obtained from the composition of the initial target, the nonstoichiometry of the obtained films.

The purpose of the present invention is to improve the quality of the obtained films of Bi-containing high-TC superconductors, the increase of the specific Faraday rotation.

This goal is achieved by the fact that in the proposed method of producing nanoscale films of Bi-containing high-TC superconductors, including the production targets of a given composition, the processing of monocrystalline gallium garnet substrate by argon ions, the sputtering target onto the substrate with further annealing of the films obtained in accordance with the proposed technical solution is used, the substrate lonesomedove gallium garnet with high value of the lattice parameter, ion sputtering and heating of the substrate during deposition of a film up to 800-850°C, flow in the area of the substrate of the controlled flow of oxygen and annealing of the obtained films of oxygen for 0.5 to 1.0 hour in an atmosphere of oxygen at a temperature of 700-750°C at normal atmospheric pressure.

The essence of the proposed method lies in the fact that the use of a heated substrate, flow in the region of the substrate controlled flow of oxygen ions and subsequent annealing of the obtained structures in the atmosphere of oxygen at normal atmospheric pressure can significantly improve the ka is estvo received nanoscale films of Bi-containing high-TC superconductors, in particular, to reduce the nonstoichiometry, substantially reduce the variance of the composition of the resulting film as compared with the composition of the target. Use lonesomedove gallium garnet as the substrate due to the high values of the lattice parameter allows to obtain a high concentration of ions Bi3+(2.5-2.8 forms, units) in the crystal lattice and to achieve high values of the specific Faraday rotation.

The method is implemented as follows. Made a target of the desired composition of the Bi-containing ferrite-garnet (the content of Bi3+- 2.5-2.8 forms. units). Monocrystalline substrate lonesomedove gallium garnet (e.g.: (GdCa)3(GaMgZr)5O12Ca3(NbGaMg)5O12Ca3(GaNbZr)5O12and others; this type of substrate is selected with the purpose of entering into the lattice of the film as much as possible the concentration of ions Bi3+to increase the specific Faraday rotation) is treated by argon ions of energy of 10-20 eV. In the vacuum chamber reaches a pressure (about 6.5-6.8)·10-4PA and produce with a platinum heater heating the substrate to a temperature of 800-850°C. Next, produce a precipitation of the target material on a substrate by sputtering with argon beam ion source (the current density of the ion beam j=8 to 12 mA/cm2the ion energy E=1-3 Kev). With the purpose of is lahcene crystallization of stoichiometric film of Bi-containing ferrite-garnet in the region of the substrate supplied by the ion source controlled flow of oxygen ions. The required film thickness is governed by the time of spraying. The resulting structure is placed in a furnace and annealed in oxygen atmosphere at a temperature of 700-750°C under normal atmospheric pressure.

An example implementation of the method.

1. Using ceramic technology was preparing the target composition of Bi2,7Lufor 0.3Fe3,9Ga1,1O12. The diameter of the target was 100 mm as substrates were used monocrystalline plate-substrate composition of Ca3(GaNbZr)5O12. The process of obtaining nanoscale Bi-containing film of the composition was carried out in a vacuum unit, based on the installation of the IOC 3279026. In the vacuum chamber reached pressure (about 6.5-6.8)·10 PA, and then perform the processing of the substrate by argon ions of energy of 10-20 eV. Next were made with a platinum heater heating the substrate to a temperature of 850°C, after which he carried out the deposition of the target material on a substrate by sputtering with argon beam ion source (the current density of the ion beam j=8 to 12 mA/cm2the ion energy E=1-3 Kev). In order to facilitate crystallization of stoichiometric film of Bi-containing ferrite-garnet in the area of the substrate was applied using an ion source controlled flows of the oxygen ion. The obtained films were annealed in the kiln yttrium garnets T-1 five-2.983.003 JV oxygen atmosphere at a temperature of 750°C and normal atmospheric pressure. After natural cooling installations for the roasting to room temperature, the obtained film was washed in distilled and deionized water. Thus were prepared with 5 films.

The results of x-ray diffraction studies showed that the obtained nano-films are single crystalline. The thickness of the transition layer 3-6 nm, the thickness of the films 33-47 nm.

According to x-ray analysis, the concentration of bismuth ions in the obtained films ranged from 2.6 forms. units to 2.72 forms. units

The table shows the main characteristics of the obtained nano-film of Bi-containing garnets.

Table
Characteristics obtained by ion beam sputtering nanoscale films of Bi2,7Lufor 0.3Fe3,9Ga1,1O12(WLPG)
№ p/pNumber patternsThe firing temperature T, °CThe film thickness WLPGThe specific Faraday rotation θF , deg/cm (λ=0,633 µm)The saturation magnetization, Ms, HSField effective anisotropy of HToE
11-170033,0054 1002804 300
23-271537,0054 9002704 450
34-573042,0055 2502504 280
46-375045,0055 6002954 290

Thus, the proposed method has the following distinctive features:

1. Used monocrystalline substrate lonesomedove gallium garnet.

2. Is heated substrate to a temperature of 800-850°C.

3. Used during the spraying process flow in the region mean the LCD controlled flow of oxygen ions.

4. The resulting film is annealed in oxygen for 0.5-1.0 hour at a temperature of 700-750°C and normal atmospheric pressure.

The use of these distinctive characteristics to achieve the obtained results the authors do not know.

Method of producing nanoscale films of Bi-containing high-TC superconductors, including the production targets of a given composition, the processing of monocrystalline gallium garnet substrate by argon ions, the sputtering target onto the substrate with further annealing the resulting film, characterized in that the substrate used lonesomedove gallium garnet, the process of dispersion is heated to a temperature of 800-850°C substrate during the spraying process is supplied in the region of the substrate controlled flow of oxygen ions, and the resulting film is annealed in oxygen atmosphere for 0.5-1.0 hour at a temperature of 700-750°C and normal atmospheric pressure.



 

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