Mixed metal oxide-based memristor
SUBSTANCE: memristor devices are nonvolatile memory devices and can be used to design computer systems based on an artificial neural network architecture. The present device consists of an active layer situated between two current-conducting layers with which it is in electrical contact. The active layer has a resistive switching property and is a double-layer oxide structure HfAlxOy/HfO2. The HfAlxOy layer has high solubility and high equilibrium concentration of oxygen vacancies, and HfO2 is a layer with low solubility of vacancies. The current-conducting layers are made of titanium nitride or tungsten nitride. A super-thin layer of ruthenium oxide with thickness of not less than 0.5 nm is deposited on the HfO2/TiN boundary surface.
EFFECT: high stability of modes of switching resistance to a low- and high-ohmic state, low switching voltage, high technological compatibility with existing silicon-based microcircuit manufacturing processes.
3 cl, 2 dwg
The invention relates to devices for micro - and nanoelectronics based on advanced materials and can be used in memory devices of computers, microprocessors, portable electronic devices, electronic cards. Memristors device can be used to build computer systems based on the architecture of artificial neural networks.
For the first time the effect of memristive was demonstrated in 2008 for the system Pt-TiO2-TinO2n-1-Pt [D.B. Strukov, G.S. Snider, D.R. Stewart, R.S. Williams. The missing memristor found. Nature, 2008, 453, p.80]. Using such elements demonstrated the ability to implement a new architecture calculations [J. Joshua Yang, Matthew D. Pickett, Xuema Li, Douglas A.A. Ohiberg, Duncan R. Stewart and R. Stanley Williams, Nat. Nanotechnology 2008, 3 429]. As in the traditional system of layers of TiO2-TinO2n-1the distribution of charge carriers (oxygen vacancies) in the film thickness has a random character, special attention is paid to the creation of a controlled distribution profile of impurities in the volume of the active layer for the effective management of the charge carriers in the memristor [Quitoriano N.J., P.J. Kuekes, Yang J. Controlled placement of dopants in memristor active regions. WO 2010085225. 29.07.2010]. To achieve similar results can be achieved by ion implantation of elements having a large number of valence electrons in the volume of the active layer and the latter is a corresponding annealing [Tang D., Xiao H. Method for forming memristor material and electrode structure with memristance. US 20090317958. 24.12.2009]. At a certain depth are formed region rich in vacancies with a negative charge. However, the use of ion implantation allows you to precisely control and flexibility to adjust the number and distribution of implanted atoms and, respectively, regions, enriched by the charge carriers in the film thickness of 10 nm or more. Since the active layer of the memristor often has a thickness of about 3-10 nm, the method of ion implantation is not optimal for the formation of a homogeneous distribution of impurities and, accordingly, does not improve the stability characteristics of the memristor. Therefore, the resistive switching memory elements using non-stoichiometric oxides of transition metals in most cases is not stable: the switch parameters, such as the value of the current in the high resistance and low resistance state, the threshold voltage transitions from one state to another, can vary from cycle to cycle. The total number of switches is small, then, as a rule, the degradation of the structure, which structure is irreversibly enters a low impedance state.
Known memristor-based mixed oxide of the metals of type A + B4+O3, where a is divalent element, and is titanium, or circa the Institute of economy and management, or hafnium [Quitoriano N.J., Ohiberg D.; Kuekes, P.J., Yang J. Using alloy electrodes to dope memristors. WO 2010085226. 29.07.2010].
The disadvantages of the considered technical solutions include:
- at least one of the conductive layers is made of Pt or Au, or alloys based on them;
- when using divalent metal as the second element of the complex oxide formation enthalpy of communication is positive, while the binding energy is quite high. As a result of this the memristor should have relatively low homogeneity and conductivity, which, in turn, leads to non-uniformities in the electric field distribution in the active layer and respectively low stability and repeatability characteristics of the memristor.
The closest in technical essence of the device adopted for the prototype, is the memristor-based mixed oxide of the metals [EN 2472254 C1, 14.11.2011]. In the conditions of the active layer is a mixed oxide, one element of which is titanium or zirconium, or hafnium, and the second element is a trivalent metal ion radius equal to 0,7-1,2 ionic radius titanium, or zirconium, or hafnium, respectively. If mixed metal oxide contains one element zirconium or hafnium, the second element contains scandium, or yttrium or lutetium.
To cons is tkam consider technical solutions include the following:
- functioning of the memristor is caused by the formation under the action of an external field in the active layer two subsoil with different concentration of vacancies. The absence of structural separation subsoil leads to lower stability and repeatability of switching modes, and requires electric mode molding at elevated voltages;
- to obtain a high concentration of charged oxygen vacancies one of the conductive layers is made of palladium. Noble metals such as Pt, Au, Pd, poorly compatible with silicon technology for the production of chips.
The technical result of the proposed invention is to improve the stability of the switching modes of resistance in low - and high-resistance state, a voltage reduction switch, high technological compatibility with existing processes for the production of silicon chips.
The solution of this problem is achieved by the fact that the memristor-based mixed oxide of metals consisting of alternating layers, namely, the active layer, located between two conductive layers, and the active layer includes a mixed oxide according to the invention the active layer consists of two sublayers, one of which is an oxide of hafnium, and the second is a mixed oxide, one element of which one is camping hafnium, and the second aluminum, and also between the conductive and the adjacent layer of hafnium oxide is placed a layer of ruthenium oxide, having a thickness not less than 0.5 nm.
In the particular case as a conductive layer is titanium nitride or tungsten nitride.
In addition, in the mixed oxide, the atomic ratio of the concentrations of aluminum to hafnium is in the range of 0.2-0.5
The invention is illustrated in the following description and the accompanying drawings.
Figure 1 - scheme of the memristor.
The memristor-based mixed metal oxide contains the active layer 1 located between the lower conductive layer 2 and the upper conductive layer 3. The active layer 1 consists of two sublayers: 1a - mixed oxide HfAlxOyand 1b - binary oxide HfO2. Between the upper conductive layer 3 and layer 1b is placed a layer 4 of ruthenium oxide thickness greater than 0.5 nm.
Figure 2 (a) spectra of x-ray photoelectron spectroscopy line Hf4f active layer in contact with RUO Li2line 1 and TiN - line 2; (b) diagram of the band structure and potential distribution in the active layer.
To improve the stability of the frequency of occurrence of switching modes in the active layer is implemented structural separation into two regions: a region containing a high concentration of oxygen vacancies and the source and the battery is a PR job, and the area in which by increasing the concentration of vacancies in the drift of the first area involves condensation of vacancies with the formation of conductive channels. For the formation of the layer, where the condensation of vacancies, the selected binary oxide HfO2with the low solubility of oxygen vacancies. Layer accumulating vacancy must have a high solubility of vacancies and the high equilibrium concentration of vacancies.
In accordance with theoretical calculations [N. W. Zhang, W. Gao, W. Sun, G. Chen, L. Zeng, L.Liu, X. Liu, J. Lu, R. Han, J. Kang, and B. Yu, Appl. Phys. Lett. 96 (2010) 123502] the formation energy of oxygen vacancies in ZrO2and HfO2significantly reduced when adding dopasowywa Al impurities, which leads to higher equilibrium concentration of vacancies. In addition, the films HfAlxOyin a wide interval of concentrations of Al (x>0.1) remain amorphous, which may lead to an increase in the solubility of vacancies. The maximum concentration of oxygen vacancies is observed in the interval x=0.2-0.5. An important factor is that the doped HfO2aluminum does not reduce the width of the forbidden zone. Therefore, as accumulating layer HfAlxOycan be considered as one of the most suitable oxides in the system IU4+IU3+xOy.
When choosing the material for the wire is included layers defining condition, that at least one of the layers should consist of a material having a high work function. Typically such material using one of the noble metals (Pt, Au, Pd). However, the use of these metals in silicon technologies circuits is highly undesirable. It has been found that increasing the effective work function of the electrode made of TiN, up to 5 eV at the interface of TiN/HfO2it is enough to place the ultra-thin layer of conductive ruthenium oxide thickness greater than 0.5 nm. The thickness of the ruthenium oxide is less than 0.5 nm leads to intermediate work function of the electrode in the range of 4.4 to 5.0 eV.
On figa presents XPS spectra line Hf4f for two cases: (1) when the active layer is deposited on the TiN electrode with sublayer RUO Li2and (2) when the active layer is deposited on the TiN electrode without additional sub-layer at the interface.
In case (2) line Hf4f is a single well-resolved doublet Hf4f5/2/Hf4f7/2. This indicates that the active layer is no volume charge and is not observed potential distribution along the depth of the layer.
In case (1), when the active layer is in contact with RUO Li2observed broadening and shift of the line Hf4f, caused by the appearance of a space charge in the active layer. Decomposition of the spectrum line three doublets with different what argemi communication allows to obtain information about the potential distribution in the active layer and to model the band structure (fig.2b). These measurements confirm the assumption that the mixed oxide HfAlxOysource after deposition contains a high equilibrium concentration of charged oxygen vacancies. Upon contact with a conductor having a large work function, vacancies are charged and the Fermi levels are aligned. It can be concluded that the level of charged oxygen vacancies in HfAlxOyequal to 4.3 eV. Therefore, when the contact of the active layer, a TiN layer having a work function of 4.3 to 4.6 eV, vacancies are not charged and remain neutral, and in contact with the ruthenium oxide having a work function of 5.1 eV, vacancies, located in the in the sphere of mixed oxide charge and the active layer there is the potential drop.
Thus, the use of sub-HfAlxOyin the active layer of the memristor allows to obtain a high initial content of neutral oxygen vacancies, and the use of an electrode with an intermediate layer RUO Li2leads to the charging of these positions.
Examples of implementation of the selected memristor
On the oxidized silicon substrate Si-SiO2(the thickness of the oxide 50 nm) by magnetron sputtering deposited conductive layer of TiN with a thickness of 200 nm.
On the substrate formed with the bottom electrode was deposited active layer consists of two sublayers: HfAl0.4Oxthickness of 4 nm and Hf 2thickness of 3 nm. The deposition was carried out by atomic layer deposition at a temperature of 240°C. as precursors used Hf[N(CH3)(C2H5)]4, Al(CH3)3and H2O.
To the active layer not covered by the pads of the lower electrodes and isolating them electrically, before applying the dielectric layer surface of the pads was covered electronic resist the polymethylmethacrylate. After application of the active layer, the resist was removed.
On the surface formed of the active layer through a shadow mask was applied to the upper electrodes. One sample was applied 10 the upper electrode 200 µm in diameter.
The sequence of deposition of the upper electrode:
1) through a shadow mask by pulsed laser deposition deposited layer of ruthenium oxide thickness of 2 nm. The deposition of a layer of ruthenium oxide was carried out by laser ablation of a metallic target EN in the atmosphere of oxygen at a pressure of 10-2Torr;
2) through the same shadow mask by magnetron sputtering deposited TiN layer thickness of 50 nm.
In pairs between the lower and upper electrodes was connected measuring instrument Agilent U2722A, includes power supply and current meter. Measurement of current-voltage characteristics of the voltage range from-2,5 SAR 2.5 V and the switching of the memristor from the high resistance state to low resistance and Vice versa was performed using the standard operating program of the device. The resistance of the high resistance and low resistance States of the memristor was averaged over 100 cycles switch from high resistance to low resistance state and Vice versa.
For ten formed memristors were obtained following characteristics: voltage switch from high resistance to low resistance state was 1.5±0.1 V, the resistance in the high resistance and low resistance States, measured at a voltage of 0.2 V, amounted ROFF=950±40 Ω, RON=50±2 Ohms respectively. The dispersion of the values of the resistances in the resistance in the low resistance state is 5%, the dispersion of the values of the voltage switching does not exceed 6%. These results suggest that the use of the proposed structure allows to obtain a memristor with a highly stable and well reproducible characteristics with high technological compatibility with the processes of production of silicon chips.
1. The memristor-based mixed oxide of metals consisting of alternating layers, namely, the active layer, located between two conductive layers, and the active layer includes a mixed oxide, wherein the active layer consists of two sublayers, one of which is an oxide of hafnium, and the second is a mixed oxide, one element of which is hafnium, and the second is aluminum, and also between conducting the adjacent layer of hafnium oxide is placed a layer of ruthenium oxide, having a thickness not less than 0.5 nm.
2. The memristor according to claim 1, characterized in that the conductive layer is titanium nitride or tungsten nitride.
3. The memristor according to claim 1, characterized in that the mixed oxide, the atomic ratio of the concentrations of aluminum to hafnium is in the range of 0.2-0.5.
SUBSTANCE: device comprises an active layer arranged between two current-conducting layers, being in electric contact with them and representing an oxide of the type ABOx, where the element B is titanium, or zirconium, or hafnium, and the element A - a trivalent metal with ion radius, equal to 0.7-1.2 of ion radius of titanium, or zirconium, or hafnium. If the element B is titanium, then A is selected as aluminium or scandium, if the element B is zirconium or hafnium, then A is selected as scandium or ittrium or lutecium.
EFFECT: increased stability and recurrence of switching voltage, resistance in low and high resistance conditions.
3 cl, 2 dwg
SUBSTANCE: according to invention magnetoelectric SHF amplifier contains microstrip dielectric substrate with installed energy conversion element, which includes magnetoelectric planar element in order to amplify SHF signal; the element is installed into microstrip substrate under microstrip resonator with wave length of 1/2 for amplified signal and with tail of 1/8 and 3/8 of wave length of amplified signal; it is connected at one side through pass-band filter of pumping frequency with pumping oscillator input and at the other side pass-band filter of amplified signal frequency and circulator with SHF signal input and output; permanent magnet is located near magnetoelectric element.
EFFECT: invention allows amplification of SHF signal in the simplest and cheapest way, reduction of device dimensions, improvement of producibility.
SUBSTANCE: invention is related to semi-conducting instruments and may be used as switching element (key) or controlled capacitor in integral microcircuit chips that also operate on frequencies higher than 10 GHz. Three-electrode high-frequency semi-conducting instrument comprises semi-conducting epitaxial layer on substrate and two high-frequency track contacts and one control contact installed on it. Contacts in high-frequency track are arranged in the form of Schottky contacts, and control contact is arranged as ohm and located outside the space between contacts in high-frequency track.
EFFECT: simplified design and technology of instrument manufacture, with simultaneous provision of possibility to operate as controlled capacitor.
SUBSTANCE: as the present invention the method for production of polyfunctional magnetic nanoparticles based on bacterial magnetosomes and the hybrid protein MGG is provided, which enables to obtain magnetosomes binding immunoglobulins of the IgG class on the fragment Fc. The result is achieved in that in the lipid membrane of bacterial magnetosomes by ultrasonic treatment the hybrid protein MGG is integrated, which amino acid sequence comprises the transmembrane domain and the binding area of immunoglobulins.
EFFECT: obtaining polyfunctional magnetic sorbent bearing on the surface of magnetic nanoparticles of ligand, that enable to connect to the particles the immunoglobulins of IgG class.
SUBSTANCE: invention relates to a method of obtaining mineral silicic water (MSW), intended for application for medical purposes. The method of obtaining includes hydrolysis of tetraethoxysilane in the TEOS mixture: ethanol: water, acidified by HCl. Nanosol is obtained at a temperature of 55-65°C for 1.5 hours with evaporation of ethanol to the volume reduction by 1/3, then, dilution of the obtained nanosol with a physiological solution NaCl is carried out in 2 steps with equal portions of the physiological solution, preliminarily heated to 40-50 in a ratio of volumes of the initial nanosol: physiological solution 1:7 with 15-minute interval. After each dilution a temperature of the solution is kept in the range of 55-65°C.
EFFECT: increase of the compound application efficiency.
SUBSTANCE: what is described is a method for preparing a nanostructured calcium-phosphate coating for medical implants consisting in sputtering a target of stoichiometric hydroxyapatite Ca10(PO4)6(OH)2 in high-frequency magnetron discharge plasma in the argon environment under pressure of 0.1-1 Pa and target power density of 0.1-1 W/cm2 for 15-180 min at a distance from the target to a carrier within the range of 40 to 50 cm, wherein the nanostructure is formed after a coating procedure in the process of the controlled thermal annealing at a temperature of 700-750°C for 15-30 min.
EFFECT: higher post-coating effectiveness of the production process.
SUBSTANCE: invention relates to compositions and polymeric materials for biomedical use, comprising silver nanoparticles (0.0005-0.02 wt %) stabilised by amphiphilic copolymers of maleic acid (0.0008-0.05 wt %), low molecular weight organic amines (0.0002-0.04 wt %) and water. In addition, the said composition may additionally comprise the polymeric structure-forming agent.
EFFECT: introduction to the composition of the polymer structure-forming agent enables to obtain the macroporous structured hydrogel materials having prolonged bactericidal and antifungal action.
3 cl, 2 tbl, 9 ex
FIELD: medicine, pharmaceutics.
SUBSTANCE: invention refers to a pharmaceutical composition for the delivery of a pharmaceutical agent to a focus of a disease. The composition contains a water-insoluble pharmaceutical agent which is paclitaxel, a pharmaceutically acceptable carrier which is albumin, preferentially human serum albumin. The relation (wt/wt) of albumin to paclitaxel makes 9:1. The pharmaceutical composition contains nanoparticles containing paclitaxel and albumin wherein the nanoparticles have a size of less than 200 nm.
EFFECT: administering the pharmaceutical composition according to the invention provides enhanced characteristics of the delivery of paclitaxel to the site of the disease and reduced adverse side effects.
24 cl, 5 tbl, 51 ex
SUBSTANCE: what is described is an umbrella device (occluder) with a modified coating layer for the left atrial appendage occlusion. The umbrella device (occluder) with the modified coating layer is made from a titanium nickelide alloy. It has the coating modified layer having a thickness of 80-95 nm which consists of at least two sub-layers: an external sub-layer having a thickness of 20-25 nm contains oxygen, carbon, silicone and titanium in the following ratio, at %: oxygen 25-65, carbon 1-5, silicone 1-10, titanium - the rest; an intermediate sub-layer having a thickness of 60-70 nm contains oxygen, carbon, silicone, titanium and nickel in the following ratio, at %: oxygen 5-30, carbon 1-5, silicone 10-30, nickel 1-50, titanium - the rest, with silicone reaching its maximum concentration at a depth of 30-35 nm from the surface. The modified coating layer of the umbrella device (occluder) has no evident interface of the sub-layers specific for a deposited layer.
EFFECT: umbrella device with the modified coating layer possesses biocompatibility, corrosive resistance and no toxicity.
9 cl, 2 dwg
SUBSTANCE: initial components represent SiO2 or titaniferous magnetite and SiO2 to be mixed with carbonate Li(Li2CO3) at the ratio of 55-70 mol. % initial components, Li2CO3 and FeCO3 making the rest in equal amounts of cathode materials LixFeyMzSiO4/C. Then, powder is fused at 1180±5°C. After cooling, obtained alloy is ground to introduce therein, as high-molecular compound, polymethyl methacrylate or soot in amount of 2-5% of alloy. Then, thermal treatment is performed in cycling mode. For this it is heated to ≥600°C and held for 55-65 minutes. Now, it is cooled to room temperature in 5-10 cycles along with powder surface modification by carbon at heating.
EFFECT: storage battery higher discharge capacity.
5 dwg, 8 ex
SUBSTANCE: membrane is made of a tetrafluoroethylene copolymer with functional perfluorinated comonomers of the general structural formula: where R: (D), (E), (K), M-H, Li, K, Na; a=24.75-18.38 mol.%; b=78.62-81.12 mol.%; c=5.0-0.5 mol.%; and is from 10 mcm and higher thick, density is 1.93-2.10 g/cm3, mechanical strength is 16-22 MPa and a coefficient of gas permeability by hydrogen (K) is 1-3.7×10-16 m3m m-2Pa-1s-1 at 20-90°C. A method of obtaining consists in combination of a porous polytetrafluoroethylene film with a perfluorosulphocationite polymer in a medium of an organic or a water-organic solvent in the presence of a modifier. The modifier is represented by hydrocarbon polymers, fluoropolymers, perfluoropolymers or their mixtures, inorganic compounds or their mixtures.
EFFECT: high drops of pressure, high current density and efficiency of an electrolysis cell exploitation.
13 cl, 3 tbl, 28 ex
SUBSTANCE: asphalt-concrete mixture containing oil viscous bitumen, a filling agent, sand with fraction to 5 mm, crushed stone and an additive contains as crushed stone crushed granite with fraction 5-15 mm, as sand - sweepings of rock crushing, as the filling agent - sludge of HES water preparation and as the additive - a homogeneous short-fibre cellulose fibre and an organomineral modifier, containing sludge of HES water preparation, Portland cement, a polymer additive Butonal NS 198 and sodium pyrophosphate, with the following component ratio, wt %: oil viscous bitumen 6.3-6.9, crushed granite with fraction 5-15 mm 62.8-67.5, sweepings of rock crushing with fraction 0-5 mm 13.5-17.6, homogeneous short-fibre cellulose fibre 0.2, filling agent - sludge of HES water preparation 12.47-12.48, sludge of HES water preparation 0.0158-0.0238, Portland cement 0.0016-0.00235, polymer additive Butonal NS 198 0.0024-0.00357, sodium pyrophosphate 0.0002-0.00028.
EFFECT: increased water resistance of asphalt-concrete mixtures.
SUBSTANCE: material consists of several layers: an inner layer is made from chitosan nanofibres/superfine fibres, and an outside layer are used as an electrical forming substrate and exercise the protective function. The chitosan layer is made from herbal or mixed herbal and animal chitosan and can contain antibiotic. The multilayer material can contain at least one more layer of biopolymer nanofibres/superfine fibres electroformed of cellulose diacetate or gelatin. The three-layer material with the chitosan layer of the nanofibres/superfine fibres is applicable for local wound and burn healing.
EFFECT: material resistance to mechanical stress.
15 cl, 4 dwg, 8 ex
FIELD: magnetic materials whose axial symmetry is used for imparting magnetic properties to materials.
SUBSTANCE: memory element has nanomagnetic materials whose axial symmetry is chosen to obtain high residual magnetic induction and respective coercive force. This enlarges body of information stored on information media.
EFFECT: enhanced speed of nonvolatile memory integrated circuits for computers of low power requirement.
4 cl, 8 dwg
FIELD: electronic engineering.
SUBSTANCE: proposed substance related to materials acting on electromagnetic fields so as to control and change them and can be used for producing materials with preset optical, electrical, and magnetic characteristics has in its composition active-origin carrier in the form of clusters of atoms, nanoparticles, or microparticles, its insulating function being checked in the course of manufacture; this function is characteristic controlling interaction between substance and electromagnetic field.
EFFECT: improved characteristics of heterogeneous substance.
FIELD: optics; coherent electromagnetic radiation systems.
SUBSTANCE: novelty is that metal, such as silver, nanoparticles whose plasma resonance frequency is close to frequency of transfer of mentioned active particles to inverted population level are additionally placed in prior-art amplifier on quantum (active) points.
EFFECT: enhanced gain for low and high strengths of fields being amplified.
1 cl, 2 dwg, 1 ex
SUBSTANCE: proposed sensor component that uses axial symmetry to impart magnetic properties to materials has magnetic material in the form of nanomagnets whose sides measure 40 - 500 nm and thickness is 3 - 10 nm; they function as zero-hysteresis superparamagnetic components.
EFFECT: use of configurational anisotropy through component symmetry to set magnetic properties and to ensure zero hysteresis.
3 cl, 8 dwg
FIELD: physics of semiconductors, in particular, engineering of semiconductor nano-structures with quantum wells, possible use for realization of powerful semiconductor devices.
SUBSTANCE: semiconductor nanostructure contains quantum well with two-dimensional electron gas, made in form of layer of narrow-zoned semiconductor i-GaAs with forbidden zone Eg1 having thickness d1 and levels of dimensional quantizing Em1 - main and Ep1 - excited, sandwiched between two layers of semiconductor AlxGa1-xAs with forbidden zone Eg2>Eg1 and main level of dimensional quantizing Em2 having thickness d2 each, which is positioned between two barrier layers of wide-zoned semiconductor i-AlAs with thicknesses temperature and differentsp and forbidden zone Eg, one of which contains δ-Si layer of admixture at distance t* from hetero-boundary i-AlAs and i-AlxGa1-xAs, and second one consists of non-alloyed i-AlAs spacer and layer AlAs(Si) alloyed homogeneously by silicon and layer i-GaAs covering the nanostructure. In composite quantum well of semiconductor nanostructure, formed on poly-insulating substrate GaAs(Cr) in form of serial layers i-GaAs(buffer)/i-AlAs(δ-Si)/i-ALxGa1-xAs/i-GaAs/i-AlxGa1-xAs/i-AlAs. By special selection of parameters Eg>Eg2>Eg1 and relation d1/d2, condition Em2<Ep1 is maintained as well as localization of two-dimensional electrons with maximum in center of symmetry of composite quantum well on levels Em1 and Em2.
EFFECT: increased mobility of μt 2D electrons in quantum well with simultaneous increase of concentration nS.
4 cl, 4 dwg
FIELD: manufacture of thin-layer films used in electronics, non-linear optics and magnetism.
SUBSTANCE: proposed substrate is coated with composite film on base of meso-porous inorganic layer containing nano-particles forming in-situ inside layer. Composite film has structure of periodic lattice in larger part of layer where nano-particles are present; nano-particles are arranged in periodic pattern in domain scale in at least four periods of film thickness. This structure may be obtained from meso-porous inorganic layer of periodic structure in domain scale in at least four periods of pores forming matrix on substrate by settling of at least one precursor in pores of matrix layer and growth of particles obtained from precursor at monitoring spatial distribution and sizes of structure of matrix pores.
EFFECT: possibility of obtaining material in form of layer containing nano-particles of regular structure.
26 cl, 5 dwg
FIELD: polymer materials.
SUBSTANCE: invention relates to composite materials based on high-molecular weight carbon-involving compounds and can be used for anodes of electrolytic condensers made from dielectric elastic film with current-conducting coating. Polyester-based film material has nano-sized metallic coating. A diamond-like layer 5-50 nm thick is disposed between modified surface of polyester base and metallic coating and, on the surface of metallic coating, spongy aluminum layer is deposited having surface development factor within a range of 80 to 400. Diamond-like nanolayer is characterized by sp3 hybridization of amorphous carbon atoms, amorphous carbon being deposited in vacuum from gas phase under action of ion-plasma source.
EFFECT: increased specific electrical capacity of condenser due to increased operation voltages and adhesion between high-developed surfaces of functional film coating nanolayers.