Method of producing heteroepitaxial silicon carbide films on silicon substrate. RU patent 2521142.
 Semiconductor growing method and semiconductor device / 2520283Group of inventions is related to semiconductor materials. A method (version 1) includes provision of a reaction chamber, a semiconductor substrate, a precursor gas or precursor gases, epitaxial CVD growing of a doped semiconductor material at the substrate in the reaction chamber in order to form the first layer, blowing of the reaction chamber with a gas mixture including hydrogen and halogen-containing gas with reduction of dopant memory effect without removal of the respective precipitated layer from the reaction zone and epitaxial CVD growing of the doped semiconductor material at the above substrate in the reaction chamber in order to form the second layer. The semiconductor device contains the semiconductor material received by the above method. The method (version 2) includes introduction of a new semiconductor substrate in the above reaction chamber after the above blowing process and epitaxial CVD growing of the doped semiconductor material at the above new semiconductor substrate. |
 Heterostructures sic/si and diamond/sic/si, and also methods of their synthesis / 2499324Heteroepitaxial semiconductor film on a single-crystal silicon substrate is grown by the method of chemical deposition from the gas phase. Synthesis of the heterostructure SiC/Si is carried out on a single-crystal silicon substrate in a horizontal reactor with hot walls by means of formation of a transition layer between the substrate and the film of the silicon carbide with the speed of not more than 100 nm/hour with heating of the specified substrate to the temperature from 700 to 1050°C with application of a gas mixture containing 95-99% of hydrogen and the following sources of silicon and carbon SiH4, C2H6, C3H8, (CH3)3SiCl, (CH3)2SiCl2, at the same time C/Si≥2, and formation of the single-crystal film of silicon carbide with the help of supplu of steam and gas mixture of hydrogen and CH3SiCl3 into the reactor while maintaining absolute pressure in the reactor in the range from 50 to 100 mm of mercury column. The silicon substrate is a plate that has an angle of inclination of crystallographic direction (111) in direction (110) from 1 to 30 of angular degrees and in direction (101) from 1 to 30 angular degrees. |
 Apparatus for catalytic chemical vapour deposition / 2486283Apparatus has a reaction chamber, a support means mounted in the reaction chamber for supporting the substrate to be processed, a gas source for feeding into the reaction chamber starting gas containing the element to be deposited, a catalyst wire lying opposite said substrate and made from tantalum wire with a tantalum boride layer which is formed on the surface of the tantalum wire before feeding the starting gas. Said apparatus also has a heat source for heating the catalyst wire in order to deposit onto the substrate decomposition products of the starting gas formed by catalysis or via a thermal decomposition reaction. Said apparatus further includes a control means for activating heating of the catalyst wire with the heat source through continuous supply of energy. |
 Method of making semiconductor structure by molecular beam epitaxy and apparatus for sublimation molecular beam epitaxy / 2473148Method and apparatus are based on resistive evaporation of sprayed materials. The doped layer of the semiconductor structure is formed by simultaneous evaporation of the basic undoped material and the basic material which is doped by an dopant. To improve the quality of the structure, when forming the doped layer of the semiconductor structure, constant flux density of the basic material is maintained by selecting electric current which is passed through the source of basic undoped material and electric current which is passed through the source of basic material doped with a dopant. The apparatus for molecular beam epitaxy has in a growth chamber, at least two resistive sources of sprayed material which are connected to corresponding power supply units, which are controlled and are connected to a programming device, one source being made from basic undoped material and the other from basic material doped with a dopant. |
 Method and apparatus for epitaxial growth of type iii-v semiconductors, apparatus for generating low-temperature high-density plasma, epitaxial metal nitride layer, epitaxial metal nitride heterostructure and semiconductor / 2462786Vacuum apparatus for epitaxial growth of type III-V semiconductors has a vacuum chamber in which pressure is kept in a range from approximately 10-3 mbar to 1 mbar during epitaxial growth, a substrate holder mounted in the vacuum chamber with possibility of attaching and heating substrates, sources for evaporating substances and feeding vapour particles into the vacuum chamber, which are particles of metals in elementary form, metal alloys and dopants, a system for feeding and distributing gases into the vacuum chamber, a source for feeding plasma into the vacuum chamber, a magnetic field generator for creating a magnetic field which gives the plasma the required shape in the vacuum chamber. The vacuum chamber is adapted to conduct diffusive distribution of gas and metal vapour particles therein, activation of gases and metal vapour with the plasma for reaction and formation of a homogeneous epitaxial layer on the heated substrate attached to the substrate holder via gaseous-phase epitaxy, activated by the low-temperature plasma. |
 Sublimate source of evaporated material for molecular beam epitaxy installation / 2449411Sublimate source of evaporated material for molecular beam epitaxy installation includes evaporated material carrier fixed on current leads where end of each current lead contains plate in which hole is made and carrier is made as bar with tapered ends and installed with its tapered ends in the holes made in plates. |
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Method of producing silicon film on substrate surface by vapour deposition / 2438211 Method of producing a silicon film on a substrate surface by vapour deposition, starting from a silicon-based precursor, characterised by that the precursor used is silicon tetrachloride. The coated substrate is cleaned or textured, then diffused out of the vapour phase or another dopant source at temperature from 800 to 1000°C; a glass layer formed during diffusion is removed; a thin antireflection coating is deposited on the electronically active silicon film, and then metal contacts are alloyed in on the front and back surfaces of the coated substrate by screen printing using temperature step. |
 Device and procedure for control over temperature of surface of substrate in process chamber / 2435873Substrate is placed in bearing recess (20) of support of substrate holders. The substrate holder is retained with dynamic gas cushion (8) formed with gas flow. Transfer of heat to substrate (9) is performed at least partially due to heat conductivity through gas cushion. Gas flow (8) forming gas cushion is formed of two or more gases with different high specific heat conductivity and composition of gases is changed depending on measured temperature of the substrate to reduce side deviations of substrate surface temperature from an average value. |
 Semiconductor sandwich-structure 3c-sic/si, method of its producion and membrane-type sensitive element incorporating said structure / 2395867Proposed structure comprises successively arranged silicon substrate with base orientation (100), layer of nano-porous 50 to 180 nm-thick silicon layer produced by chemical etching of substrate and layer 3C-SiC applied with substitution of hydrogen by carbon in surface bonds of Si-C of porous silicon layer. Proposed invention covers also method of produced above described sandwich structure and membrane-type sensitive element. |
 Method of making aluminium nitride film on sapphire substrate and installation for realising said method / 2388107Invention relates to technology of making aluminium nitride films. The method of making an aluminium nitride film on a sapphire substrate involves a process of depositing onto its pre-nitrated surface material of the source which is evaporated through electron-beam evaporation. The source is highly pure aluminium, whose vapour chemically reacts in the zone adjacent to the substrate with atomic nitrogen obtained from molecular nitrogen by splitting its molecules in high-frequency discharge plasma. The aluminium vapour is deposited onto the surface of the sapphire substrate under the effect of a directed electric field. |
 Method for producing diamond-like films for encapsulating solar photocells / 2244983Proposed method for producing diamond-like films designed for encapsulating solar photocells to protect them against chemical, radiation, and mechanical damage includes variation of ion kinetic energy, plasma discharge current, and spatial density distribution of plasma incorporating C+, H+, N+, and Ar+ ions by acting upon ion current from radial source with electric field built up by stop-down, neutralizing, and accelerating electrodes. Spatial plasma distribution is checked for uniformity by measuring plasma current density on solar photocell surface whose temperature is maintained not to exceed 80 oC. In the process substrate holder makes complex axial movement in three directions within vacuum chamber. Diamond-like films produced in the process on solar photocell surface area over 110 cm2 are noted for uniformity, difference in their optical parameters variable within desired range is not over 5%. |
 Method of forming of polycrystalline silicon layers / 2261937The offered invention is pertaining to the field of microelectronics, in particular, to the methods of manufacture of microcircuit chips. The offered method includes a loading of semiconductor slices in a reactor having hot walls perpendicularly to a gas stream, pumping-out of the reactor air up to the ultimate vacuum, introduction of monosilane for deposition of layers of polycrystalline silicon, silane supply cutoff, pumping-out of the reactor air up to the ultimate vacuum, delivery of a noble gas into the reactor up to atmospheric air pressure, unloading of the semiconductor slices from the reactor. After introduction of the noble gas into the reactor conduct an additional thermal annealing of layers of polycrystalline silicon at the temperature of no less than 1323K, then keep the slices at this temperature during 40-60 minutes in a stream of noble gas and reduce the temperature down to the temperature of the polycrystalline silicon layers growth. The technical result of the invention is a decrease of heterogeneity of resistance of the polycrystalline silicon layers. |
 Boule of the iii-v groups element nitride used for production of substrates and the method of its manufacture and application / 2272090The invention is pertaining to production of microelectronic devices on the basis of substrates manufactured out of III-V groups chemical element nitride boules and may be used in semiconductor engineering. Substance of the invention: the boule of III-V groups chemical element nitride may be manufactured by growing of the material of III-V groups the chemical element nitride on the corresponding crystal seed out of the same material of nitride of the chemical element of III-V of group by epitaxy from the vapor phase at the speed of the growth exceeding 20 micrometers per hour. The boule has the quality suitable for manufacture of microelectronic devices, its diameter makes more than 1 centimeter, the length exceeds 1 millimeter, defects density on the boule upper surface is less than 107 defects·cm-2. |
 Tetrafluorosilane production process, method for assaying impurities in tetrafluorosilane, and gas based thereon / 2274603Tetrafluorosilane production process comprises following stages: (1) hexafluorosilicate heating; (2-1) reaction of tetrafluorosilane gas containing hexafluorodisiloxane formed in stage (1) with fluorine gas; (2-2) reaction of tetrafluorosilane gas containing hexafluorodisiloxane formed in stage (1) with fluorine-polyvalent metal compound; (2-3) reaction of tetrafluorosilane gas obtained in stage (2-1) with fluorine-polyvalent metal compound. Finally, high-purity tetrafluorosilane with 0.1 ppm by volume of hexafluorodisiloxane is obtained, which is applicable in manufacture of optical fiber, semiconductors, and sun battery elements. |
 Method for producing part incorporating silicon substrate whose surface is covered with silicon carbide film / 2286616Proposed method for manufacturing part incorporating silicon substrate with silicon carbide film on its surface includes synthesis of silicon carbide film on substrate surface by joint heating of substrate and carbon-containing material at temperature of 1100 to 1400 °C; used as carbon-containing material is solid material brought in mechanical contact with substrate. |
 Method for producing part incorporating silicon substrate whose surface is covered with silicon carbide film / 2286617Proposed method for manufacturing part incorporating silicon substrate with silicon carbide film on its surface includes synthesis of silicon carbide film on substrate surface using carbon deposited from carbon-containing material onto heated substrate surface; carbon is deposited on substrate surface under conditions which do not provide for silicon carbide formation and then such conditions for silicon carbide synthesis are set. |
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Method for production of quantum size structures on basis of amorphous silicon nano-clusters, built into dielectric matrix / 2292606 Method for producing quantum size structures on basis of amorphous silicon nano-clusters, built into dielectric matrix, is realized by decomposing a mixture of mono-silane and source of nitrogen in plasma of glow discharge with generation of reaction products and sedimentation from them of quantum size structures based on amorphous silicon nano-clusters. During decomposition and sedimentation, plasma of glow discharge is used with frequency of 45-65 kHz, and as nitrogen source ammonia is used. |
 Method for growing multilayer semiconductor nitride heterostructure / 2316075Proposed method using molecular-beam epitaxy for growing multilayer semiconductor nitride heterostructure that has substrate with template layer covered with semiconductor layers includes substrate heating, nitridation of substrate surface layer by feeding ammonia flow to substrate surface, formation of template layer by simultaneous supply of aluminum atoms and ammonia flow thereto until desired thickness of template layer is attained, this being followed by growing overlying semiconductor layers by way of molecular-beam epitaxy; substrate is heated to 1100-1200 °C, ammonia and aluminum flows are supplied in proportion of NH3/Al = 100-400. |
 Plate of large diameter made out of sic and method of its fabrication / 2327248Invention refers to a SiC plate with an outer diameter of six inches and to a method of its fabrication. To achieve that a polycrystalline SiC is being grown from at least one side of a small diameter plate surface made out of a mono crystalline α-SiC up to a dimension when its outer diameter corresponds to a manipulation device of an existing line for semiconductors fabrication; and than the polycrystalline SiC received out of the mono crystalline SiC on the surface of the plate is ground to achieve the SiC of a bigger diameter with a double structure where the polycrystalline SiC has been grown around the outer periphery of the smaller diameter plate out of the mono crystalline α-SiC. |
 Method of depositing thin stoichiometric films of binary compounds / 2342469Present invention pertains to semiconductor nanotechnology, in particular, to thin-film material science, and can be used in modern technology, especially the fast growing technology of integral circuits. To deposit thin stoichiometric films of binary CdTe compound, the following technological operations are carried out. Successive processing of the substrate surface is carried out at 210-390°C using vapours of cation- and anion containing reagents-precursors of dimethylcadmium and methallyl telluride mixed with a gas carrier. Intermediate removal of tellurium from the surface of the substrate is carried out, which is in excess after formation of the stoichiometric CdTe compound. Removal is done by treatment with a reagent-precursor, which forms a volatile compound with the tellurium. |
FIELD: physics.
SUBSTANCE: invention relates to the technology of producing semiconductor materials and can be used in making semiconductor devices. The method of producing heteroepitaxial silicon carbide films on a silicon substrate involves obtaining a film on the surface of a substrate by ion-plasma magnetron sputtering of one polycrystalline silicon carbide target while heating the substrate to temperature of 950-1400°C in an Ar atmosphere.
EFFECT: invention simplifies the technology by using one polycrystalline target and improves the quality of films owing to high adhesion.
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The invention relates to the technology of semiconducting materials and can be used for creation of semiconductor devices. More precisely the invention relates to the technology of production of heteroepitaxial structures of silicon carbide (SiC) on silicon (Si), which can be used as substrates in the manufacture of elements of semiconductor electronics, obtained on the basis of wide-gap material SiC.
There is a method of chemical vapor deposition, which in the foreign literature referred to as CVD (Chemical Vapor Deposition). There are different designs reaction chamber and the methods of synthesis of single-crystal films described in the publications of US 4123571 (31.10.1978), WO 9623912 (08.08.1996), US 5670414 (23.09.1997), US 6299683 (09.10.2001), JP 2005109408 (21.04.2005), EN 2394117 (24.03.2008), which allow the CVD method to implement the deposition of silicon carbide in the temperature range of substrates from 800 C to 2500°N
The method EN 2394117 (24.03.2008) is that as a result of chemical reactions in gas phase and on the surface of the substrate with the participation of the sources of the components of the film and of intermediate compounds, synthesis of the film material. As sources of the components of the film silicon carbide usually use silane and propane, dissolved hydrogen. In addition, the sources used and other substances: SiCl 4 , SiCl 2 H 2 , CH 3 SiH 3 , CH 3 SiCl 3 , (CH 3 ) 2 SiH 2 , (CH 3 ) 2 SiCl 2 , CH 4 , C 2 H 2 , C 2 H 6 . The rate of deposition of silicon carbide depends on the synthesis temperature and on the concentration of the sources of the components in the gas mixture.
The disadvantages of this method are the complexity of the technology of production, namely the need for the use of hydrides and silicon halides (complex from the point of view of ecology and safety of reagents). The disadvantage is the need to maintain the optimal composition of the gas components in the mixture and the complexity of implementation of the required process conditions in large reactors, where the uneven impact of reagent concentration by volume due to production of reagents and allocation of the reaction products.
There is a method for patent RU 2363067 (22.01.2008), which is manufacturing of products containing silicon wafer with the film silicon carbide on its surface, which includes heating of the substrate and synthesis of film on the surface of the substrate in the gas medium containing compounds of carbon, as a gas environment using oxide or carbon dioxide or a mixture of oxide or carbon dioxide with inert gas and/or nitrogen at a pressure of 20-600 PA, and heating of the silicon substrate is carried out until the temperature 950-1400°N Only carbon monoxide or carbon dioxide FROM 2 . You can use as a gas environment mixture of gases consisting of 45% by weight carbon oxide CO, 50 wt.% argon and 5 wt.% nitrogen.
This method is ineffective, that is, the difficulty lies in the multitude of the preliminary stages of preparation of the substrate. The disadvantage is the use of oxide compounds that can be formed in chemical reactions in the composition of obtained films residual oxygen in a kind of impurity. Another drawback is the small thickness of the coatings (50 nm).
Also known methods that use a combined approach. In these ways, components involved in chemical reactions at the surface of the substrate, are delivered from the solid and gaseous compounds.
The authors Joung et. al. (SiC formation for a solar cell passivation layer using an RF magnetron co-sputtering system. Nanoscale Research Letters 2012, 7:22) on the surface of 4 inch silicon substrate of p-type (100), using high frequency (HF) (100, 150, 170, 200 W) magnetron sputtering joint system from two sources-targets of silicon and graphite with additional overlap C 2 H 2 and Ar received film silicon carbide.
The disadvantage of this method of cultivation is two magnetron systems for independent spraying two targets - from the solid silicon and graphite, which complicates the design process plants, increases energy costs. Furthermore, the method does not allow you to obtain a uniform film thickness and density because of the impossibility of control of diffusion of hydrocarbon in the formed layers of silicon carbide. As a result of realization of the way it turns out, the film is relatively low quality, with amorphous structure.
The way the authors Qamar A. et al. (Synthesis and characterization of porous crystalline SiC thin films prepared by radio frequency reactive magnetron sputtering technique, Applied Surface Science 257, 2011, 6923-6927) system was used reactive magnetron sputtering silicon target diameter 4 inches (99,999% purity) in an RF discharge (13.56 MHz), 200 watt, in the atmosphere of gases Ar (99,999% purity) and CH 4 (99,999% purity) in the ratio Ar/CH 4 =80/20 (at.%). As substrates were used polished wafers of Si (100). The temperature of the substrate was 850-950 C. Previously, the substrate was cleaned with acetone and alcohol and were washed in an ultrasonic bath for 15 minutes each. The chamber was pumped to 9.3 x 10 -6 PA. The process was carried out for 30 minutes. The distance between the target and the substrate was 5 see
The disadvantages of this method are:
1. Time-consuming equipment for the coordination of high frequency signal with the load and instability discharge occurring in the near-cathode region, the difficulty in regulating relations in the resulting film of carbon from the gaseous component and silicon from the solid.
2. Spray rates on alternating current to less than half that of a direct current, as the sputtering of target atoms occurs in one half-period.
3. Use from the point of view of security of gas CH 4 as a source of carbon to obtain films of silicon carbide.
In the way WO 2009/011816 A1 (22.01.2009) get film heteroepitaxial SiC / Si by heating up to 1,000 degrees Celsius in the atmosphere of argon ion-plasma magnetron sputtering on direct current. Used target for magnetron sputtering on a direct current in a way not described, although it is the defining technological level of magnetron sputtering. In the body of the method is a reminder of the process with two targets Si and C, the target of monocrystalline wafers SiC (p - and n-type) with HF-magnetron sputtering and direct current priority is given to the process of reactive magnetron sputtering in an environment of methane (CH 4 ). This method is most close declared and therefore taken as a prototype.
The disadvantages of this method are obvious from the disadvantages of above-mentioned methods of obtaining films of silicon carbide silicon potoke. These weaknesses affect the perfection of the received epitaxial film.
The present invention is development of a new method of production of single-crystal film heteroepitaxial silicon carbide silicon substrate, which will provide safety and facilitation of technology, and to reduce production costs while maintaining the quality, sufficient for their subsequent use in the manufacture of elements of electronic engineering.
The technical result consists in the simplification of the production method, in improving the perfection of the coatings, silicon carbide silicon substrate.
The technical result is achieved plasma ion magnetron sputtering polycrystalline target SiC in argon atmosphere at direct current. The formation on a substrate of silicon epitaxial films of silicon carbide cubic polytype is on the surface preheated from 950 to 1400°C silicon wafer. The temperature of 950 C to this crystallization film silicon carbide in cubic politep on si substrate. The temperature of 1400 C to this melting point of silicon, which is the maximum value that have been obtained qualitative film silicon carbide silicon substrate.
Summary of the invention
The method of obtaining the film heteroepitaxial silicon carbide silicon substrate, which includes heating of the substrate temperatures of 950-1400°C in the atmosphere of Ar and obtaining of films on the substrate surface ion-plasma magnetron sputtering, differs in that the spraying carried out at direct current of one polycrystalline target silicon carbide.
A specific example
The method of obtaining the film heteroepitaxial silicon carbide silicon substrate consists of the following operations performed sequentially:
1. Download the working chamber:
a) preparation of the substrate the substrate using the monocrystal silicon plate brand KDB-3 (silicon semiconductor qualifications, doped with boron), area of 25 mm 2 300 microns thick with the orientation of the surface, rejected from the plane (111) (etching in HF within 2 hours, boiled in distilled water for 2 times, rinsing in alcohol);
b) installation of the substrate (13) at a distance of 5 cm from the magnetron in tungsten heater (11);
b) setting target (12) disc of polycrystalline silicon carbide with a diameter of 6 cm and a thickness of 0.5 cm, made from a powder of silicon carbide by pressing and subsequent sintering in argon at temperature 2400°C, on cooled by flowing water of the magnetron.
2. Pumping air from the working chamber with a vacuum system to 10 -6 mm Hg
3. The power of the heater surfaces (11), establishing a substrate temperature of 950 C.
4. Turning the system dosed overlap argon and bringing pressure from 0,6·10 -3 to 1·10 -3 mm Hg
5. The inclusion of cooling and power of the magnetron and receiving the discharge current density of 2-5 mA/cm 2 at a voltage between anode and cathode ~400 Century
6. 10 minutes after the beginning of the process of sputtering open the valve (10) and is deposition on a substrate for 30-60 minutes.
7. Upon reaching the required width of the epitaxial layer discharge current magnetron off, and the substrate cooled down to room temperature for 20 minutes.
On the figure 1 the block diagram of the magnetron sputtering system for thin SiC films on Si substrates, where 1 - stove installation, 2 - magnetic circuit, 3 - ring NdFeB magnets, 4 - brass cover, 5 - sealing fluoroplastic, 6 - insulating washer, 7 - metal washer, 8 - nut, 9 - tube input and output of the cooling water magnetron, 10 - flap, 11 - heater for the substrate, 12 - target, 13 - substrate, 14 - magnetic lines of force, 15 - stream of the sprayed substance.
Thus, the developed technology for formation on silicon substrates single-crystal films of silicon carbide with the necessary thickness and valid mechanical stresses. The proposed method allows to simplify the technology of production, to improve quality films and reduce energy costs.
The method of obtaining the film heteroepitaxial silicon carbide silicon substrate, which includes heating of the substrate temperatures of 950-1400°C in the atmosphere of Ar and obtaining of films on the substrate surface ion-plasma magnetron sputtering, wherein spraying is carried out on one of polycrystalline target silicon carbide.