Selective microwave amplifier. RU patent 2519006.

FIELD: radio engineering, communication.

SUBSTANCE: invention relates to radio engineering and communication and can be used in devices for microwave filtering of radio signals in cellular communication systems, satellite television and radar. The selective microwave amplifier comprises an output transistor (1), the base of which is connected to an auxiliary voltage source (2), and the collector is connected through a first (3) resistor to a first (4) power supply bus, a voltage-to-current converter (5), matched with a second (6) power supply bus, the output (7) of which is connected to the emitter of output transistor (1), an input voltage source (8), connected to the input of the voltage-to-current converter (5), a first (9) and a second (10) balancing capacitor. The collector of the first (1) output transistor is connected via alternating current to the first (4) power supply bus through the series-connected first (9) and second (10) balancing capacitors, the common node of which is connected to the output of the device (11) and the output (7) of the voltage-to-current converter (5).

EFFECT: high Q factor of the resonance frequency response of the amplifier and voltage gain at quasi-resonance frequency f₀.

3 cl, 15 dwg

The invention relates to the field of radio engineering and communication and can be used in the devices of microwave filter the signals of cellular communication systems, satellite television, radar, etc.

The task selection of high-frequency and microwave signals are now widely used integrated operational amplifiers with special elements RC-correction form of amplitude-frequency characteristic of resonant type [1, 2]. However, the classical construction of such election amplifiers (RC-filters) is accompanied by significant energy losses, which go mainly to ensure static conditions of a sufficiently large number of basic and auxiliary transistors, forming operational amplifier UHF range. In this regard, quite topical is the problem of constructing microwave election amplifiers, providing the allocation of narrow-spectrum signals with high q resonance parameters (Q=2 to 10) with low power consumption and minimal possible number of transistors.

Known election amplifiers, implemented on the basis of two bipolar transistors [3-20], ensuring the formation of amplitude-frequency characteristic gain voltage within the specified range of frequencies F=f-f n . And their upper cutoff frequency f in sometimes formed the first group of corrective condensers, and lower by the second group correction capacitors.

The closest prototype of the proposed device is the selective amplifier figure 1 presented in the patent application US 5304946 fig.24. It contains the output transistor 1, the base of which is connected with the source of auxiliary voltage 2 and collector through the first 3 resistor is connected with the first 4 bus power supply, power inverter voltage-current" 5, agreed with the second 6 bus power supply, the output of which 7 is connected with the emitter output transistor 1, the input voltage 8, connected to the input of the inverter voltage-current" 5, the first 9 and 10 second correction capacitors.

A significant disadvantage of the device is that it does not provide high quality of amplitude-frequency characteristics, and gain the voltage at frequency of quasiresonant (f 0 ).

The main objective of the invention consists in increasing the quality factor of the resonance amplitude-frequency characteristics of the electoral amplifier and its gain voltage at frequency of quasiresonant f 0 , and creating the conditions for electronic control units K 0 , Q, f=const. This reduces the overall power consumption of system-on-chip and implement high-quality managed selective device with f 0 =1 to 50 GHz.

The problem is solved by the fact that in the electoral amplifier UHF band 1, containing the output transistor 1, the base of which is connected with the source of auxiliary voltage 2 and collector through the first 3 resistor is connected with the first 4 bus power supply, power inverter voltage-current" 5, agreed with the second 6 bus power supply, the output of which 7 is connected with the emitter output transistor 1, the source of the input voltage 8, connected to the input of the inverter voltage-current" 5, the first 9 and 10 second correction capacitors, there are new elements and communications - collector of the first 1 output transistor is connected to AC with the first 4 bus power supply via the connected in series the first 9 and 10 second correction capacitors, shared node that is connected with output of 11 and connected to the output of 7 Converter "voltage-current" 5.

The scheme of electoral amplifier prototype is shown in figure 1. Figure 2 presents the scheme of the claimed device in accordance with paragraph 1 of the claims.

Figure 3 shows a diagram of PS 3 in accordance with claim 2, in which the inverter voltage-current" is realized on the stage with common-base (transistor 13, condenser 14, resistor 15).

Diagram 4 corresponds to the item 3 of the claims.

Figure 5 shows Yiwu 3 with another option execution Converter "voltage-current" - transistors 17, 18 and the current source 19.

Scheme 6 figure 2 corresponds to the case when the output transistor 1 is made on the basis of p-n-p transistor, a static mode, which is set by dvuhyarusnaya 20, within the framework 5.

7 shows the scheme of the claimed Yiwu 2 in the environment of computer modeling Cadence on models SiGe integrated transistors technology SGB25VD.

On Fig given the logarithmic amplitude-frequency (LACH) and phase (PFC) characteristics Yiwu 7 in a wide frequency range from 1 MHz to 100 GHz with Rvar1=0, Rvar1=1 kOhm, Cvar=680 FF.

Figure 9 shows the scheme of LACK Yiwu 7 at different values of resistance Rvar2=R17.

Figure 10 shows the scheme of LACK Yiwu 7 at different values of resistance Rvarl=R19.

Figure 11 shows a diagram of PS 4 in the environment of computer modeling Cadence on models SiGe transistors.

On Fig presents LATCH and PFC PS 11 in the frequency range from 10 MHz to 100 GHz.

On Fig shows the dependence of the quality factor Q of the resonant frequency f 0 Yiwu 7 from the capacitor C1.

On Fig LACK Yiwu 7 for different values of the capacitor C2.

On Fig presents LACK Yiwu 7 in a very high range of frequencies (f 0 =40% to 50 GHz) with C1=10 FF, R1=550 Ohm, C2=50 FF, R2=600.

The electoral power of the microwave range figure 2 contains the output transistor 1, the base of which is connected with the source of auxiliary voltage 2 and collector through the first 3 resistor is connected with the first 4 bus power supply, power inverter voltage-current" 5, agreed with the second 6 bus power supply, the output of which 7 is connected with the emitter output transistor 1, the input voltage 8, connected to the input of the inverter voltage-current" 5, the first 9 and 10 second correction capacitors. Collector of the first 1 output transistor is connected to AC with the first 4 bus power supply via the connected in series the first 9 and 10 second correction capacitors, shared node that is connected with output of 11 and connected to the output of 7 Converter "voltage-current" 5.

Figure 3 in accordance with claim 2 output 7 Converter "voltage-current" 5 is connected to the emitter output transistor 1 through additional resistor 12.

Figure 4 in accordance with section 3 of the claims as a source of auxiliary voltage 2 is the capacity of a shared bus power sources 16.

Figure 5 shows Yiwu figure 3 with the concrete implementation of the inverter voltage-current" 5, which is implemented transistors 17, 18 and the current source 19.

In the diagram 6 inverter voltage-current" 5 made transistors 17, 18 and current sources 19 and 20. Consider the work of PS 2.

Input voltage u I (8) changes the base current of the transistor inverter "voltage-current" 5 and, therefore, the emitter and collector current of the transistor 1. The nature of the load collector circuit of the transistor 1, formed by the resistor 3 and capacitive divider consisting of a capacitor 9 and 10, provides output 11 implementation of the characteristics of the electoral amplifier. The output is supplied to the emitter of the transistor 1 and forms the contour of regenerative feedback, and in the lower frequencies (f<<f 0 ) and in the upper frequencies (f>>f 0 ) at the expense of the capacitor 9 and capacitance of the capacitor 10 this Association remains reactive. The materiality of feedback is provided on only one frequency coincides with the frequency of quasiresonant f 0 Yiwu. For this reason, the action of a feedback aimed at increasing the implemented quality factor Q, and gain To 0 without changing the frequency of quasiresonant f 0 .

We show analytically that in the diagram figure 2 is implemented by a higher value of the quality factor Q, and gain To 0 on the frequency of quasiresonant. Indeed, a comprehensive gain Yiwu figure 2 is determined by the formula

where f is the frequency of the input signal;

f 0 is the frequency of quasiresonant election amp;

Q - q AFC election amp;

0 - gain Yiwu on the frequency of quasiresonant f 0 .

The frequency of quasiresonant schemes Yiwu f 0 is the ratio

and the quality factor Q depends on the depth of material feedback

& alpha 1 - static coefficient of transmission of current of transistor 1;

h 11.1 - input resistance of the transistor 1 scheme with a common base;

where D 0 - decay zero load circuit of the transistor 1.

The peculiarity of the scheme is the possibility of implementing negative (fazoinvertor) gain Yiwu on the frequency of quasiresonant (scheme 2)

& alpha 5 , h 11.5 - similar small-signal input parameters

transistor supplied with the inverter voltage-current" 5.

From the above ratios shows that at ravnoudalennostj capacitive circuit elements (From 9 =10 C ) selection of the optimal value of the resistor 3

possible maximizing implemented the quality factor Q:

where β1 =α 1 /(l-alpha 1 ).

In this case parametric sensitivity of q

is fairly low in low-power mode bipolar transistors.

The first distinctive feature of the scheme Yiwu figure 2 is the ability functional settings Yiwu. As can be seen from (2) the required value of f 0 can be adjusted by changing the emitter current (I E1 ) transistor 1. Indeed,

where f t =26 mV - temperature potential.

The second significant feature of the proposed scheme Yiwu - ability to work in a range of extremely high frequencies (Fig, f0=43,98 GHz), due to its kaskadniy architecture. The data confirm theoretical conclusions graphics Fig-figure 10, Fig - Fig.

Thus, the claimed circuit decision Yiwu characterized by higher values of q, and gain the voltage in the SHF and EHF ranges.

THE BIBLIOGRAPHIC LIST

1. Design of Bipolar Differential OpAmps with Unity Gain Bandwidth of up to 23 GHz \ N.Prokopenko, A.Budyakov, K. Schmalz, C. Scheytt, P.Ostrovskyy \\ Proceeding of the 4-th European Conference on Circuits and Systems for Communications - ECCSC'08 /- Politehnica University, Bucharest, Romania: July 10-11, 2008. - pp.50-53

2. Microwave SF-blocks of communication systems on the basis of fully differential operational amplifiers \ Prokopenko N., Budakov A.S., K. Schmalz, .Scheytt \\ the problems of development of micro - and nanoelectronic systems - 2010. Collection of papers / edited edited by the academician of RAS Alemannische. - M: ITPM RAS, 2010. - S-586

3. Ejkov YU.S. Reference circuitry amplifiers. - 2-e Izd., Rev.), IE the Radiosoftware, 2002. - P.21, Riv.

4. Volgin LI Synthesis and circuitry analog electronic means in the elemental basis of amplifiers and repeaters current / Liolyn, Aigarakov. Under the General Ed. Liongina. - Ulyanovsk: UlSTU, 2005. - P.33, Fig.27.

5. Patent US 5.304.946 fig.22.

6. Patent US 7.113.043.

7. Patent US 7.598.810.

8. The patent application US 2005/0146389 fig.3.

9. The patent application US 2008/0231369 fig.2.

10. Patent US 7.110.742 fig.5.

11. Patent US 6.515.547 fig.4a.

12. Patent US 7.633.344 fig.7.

13. Patent US 7.847.636 fig.4a.

14. Patent US 7.786.807.

15. The patent application US 20070296501.

16. The patent application US 2008/0018403.

17. Patent US 3.351.865.

18. Patent US 7.737.790.

19. Patent US 4.151.483 fig.2.

20. Patent application JP 2003011396.

1. The electoral power of the microwave range, containing the output transistor (1), the base of which is connected with the source of auxiliary voltage (2), and collector through the first (3) the resistor is connected to the first (4) bus power supply, power inverter voltage-current" (5), agreed with the second (6) bus power supply, the output of which (7) is connected to the emitter output transistor (1), the input source voltage (8)connected to the input of the inverter voltage-current" (5), first (9) and second (10) correction capacitors, wherein

collector of the first (1) output transistor is connected to AC with the first (4) bus power supply via the connected in series the first (9) and second (10) correction capacitors, General site which is associated with access devices (11) and is connected to the output (7) of the inverter voltage-current" (5).

2. The electoral power of the microwave range in claim 1, characterized in that the output (7) of the inverter voltage-current" (5) is connected to the emitter output transistor (1) through additional resistor (12).

3. The electoral power of the microwave range in claim 1, characterized in that the source of the auxiliary voltage (2) use the potential of shared bus power supplies (16).