Method of electronic device fabrication

FIELD: physics.

SUBSTANCE: invention relates to semiconductor technology. Proposed method comprises removal of photoresist from at least one surface of conducting layer with the help of the mix of chemical including first material of self-optimising monolayer and chemical to remove said photoresist. Thus self-optimising monolayer is deposited on at least one surface of said conducting ply. Semiconductor material is deposited on self-optimising monolayer applied on conducting layer without ozone cleaning of conducting layer.

EFFECT: simplified method.

15 cl, 4 dwg

 

The technical FIELD TO WHICH the INVENTION RELATES.

The present invention relates to a method of forming an electronic device. The invention, particularly applicable to devices such as organic electronic devices and methods of forming such devices.

PRIOR art

Known techniques, such as photolithography, for applying a different template elements, thin-film transistor, such as a polymeric conductors, semiconductors and insulators. Photolithography is a method used in the micro-processes to selectively remove parts of a thin film. The method uses light to transfer the pattern with photomasks sensitive to radiation, the photoresist of the substrate. A number of chemical treatments forms a pattern on the material under the photoresist.

During photolithography, via technologies, such as coverage by centrifuging, slit coating and doctor coating on the substrate is deposited a uniform thin film of photoresist. Viscous, liquid photoresist is deposited on a substrate and the substrate is rapidly twisted to obtain a uniform layer thickness. Covered by the photoresist, the substrate is then dried to remove excess solvent. After drying, the photoresist is exposed to intense light is m in accordance with the template. Optical lithography typically uses ultraviolet light that shines through photomask. Positive photoresist after exposure becomes soluble in a base developer. This chemical change makes it possible to remove the photoresist solution developer.

During the etching chemical reagent removes the topmost layer of the substrate in the areas not protected by photoresist. After the photoresist is no longer needed, it is removed from the substrate. This usually requires a liquid reagent for the removal of the photoresist, which dissolves the material of the photoresist.

In WO 9910939 disclosed the technology of photolithography, for applying a pattern of conductive polymer film by exposure to ultraviolet (UV) light through photomask. Photomask contains a pattern of metallized areas, blocking UV light. The polymer is mixed with a crosslinking agent. In areas where the film is exposed to ultraviolet light induced reaction stitching, which makes the polymer film insoluble, so that the polymer could be successively washed out of the unexposed areas.

A switching device, such as a transistor, may over time or under certain conditions to degrade. Additional SAM (self-organizing monolayer) material which can ensure the overcoming of this degradation. The deposition of the SAM material to improve the functioning of traditional organic electronic devices are disclosed in US 7132678.

When SAM deposition on top of the conductive layer, such as the electrodes of the source and drain, the work function conductive material can be improved, thereby leading to an increase in the charge injection from the contacts of source and drain between adjacent channels of semiconductor devices.

Methods of deposition such a self-organized monolayer include a wet method such as spray coating, coating by dipping method and the coating method of centrifugation. These technologies of deposition of the SAM material to improve business functions conductive material, such as electrical contacts, include additional steps of the method of using during several tools that require additional expenses.

The INVENTION

In accordance with the first aspect of the present invention, a method of forming an electronic device, the electronic device includes a substrate and a conductive layer, the method includes removing the photoresist with at least one surface of an electronic device using a mixture of reagents for removal of photoresist, the mixture of reagents for removal of photoresist includes a first material Samoa genisoimage monolayer and a reagent for removal of photoresist to dissolve the photoresist, thereby precipitating self-organizing monolayer on at least one surface of the electronic device.

For example, in the method of forming an electronic device containing the substrate and the conductive layer, the method comprises: removing the photoresist with at least one surface of the electronic device, and the deposition of self-organizing monolayer on at least one surface of the electronic device at one stage of the method, through the use of a mixture of reagents (for removal of photoresist), and SAM materials for deposition on at least one surface of the electronic device).

In this embodiment, at least one surface may include at least one surface of the aforementioned conductive layer and/or the surface of the aforementioned substrate. For example, at least one surface may be one or more electrode or electrical contact, such as the source electrode and the drain electrode. Additionally or alternatively, the substrate may be a surface of the channel semiconductor device between such electrical contacts.

Thus, removal of photoresist and deposition of self-organizing monolayer occurs within the same stage photolithographic technique (removal of photoresist), thus SN is zhaya the total number of steps of the method. In particular, the SAM material may be added to the reagent for removing photoresist to obtain a mixture, and this mixture is deposited in the process of step photolithographic method of removing the resist. At this stage revealed certain contacts.

Thus, for example, photoresist, which is removed in the above-described embodiments, implementation, can be used in the photolithographic method of applying a pattern on the conductive layer for forming the source electrode and the drain electrode.

In the case where the electronic device includes a source electrode and a drain electrode, and the channel semiconductor device connects the neighboring electrodes of the source and drain, the substrate may include a surface of the channel semiconductor device.

When an electronic device includes a source electrode and a drain electrode, and the channel semiconductor device connects the neighboring electrodes of the source and drain of at least one surface of the conductive layer may include a surface of the source electrode and the electrode surface runoff.

The method may also include the deposition of a semiconductor material on self-organizing layer is deposited on the conductive layer, without ozone purification conductive layer. Omitted phase ozone cleaning can be ozone cleaning pic the e deposition of the conductive layer to improve the adhesion sequentially deposited photoresist and/or may be ozone cleaning immediately prior to deposition of subsequent layers, for example, self-organizing monolayer or a semiconductor layer on the surface of the conductive layer.

When an electronic device includes a source electrode and a drain electrode, the method can also include the further deposition of the first material self-organizing monolayer on the surface of the source electrode and the surface of the drain electrode, followed by deposition of the second material self-organizing monolayer, different from the first material self-organizing monolayer on the surface of the substrate.

In the above-described variants of implementation, the method may also include removing the photoresist in the photolithography method for applying a pattern on the conductive layer to form source electrodes and drain.

In accordance with the second aspect of the present invention, a method for creating a mixture of reagents for removal of photoresists, in which the mixture of reagents for removal of photoresist contains material self-organizing monolayer and also contains a reagent for removal of photoresist to dissolve the photoresist, and the reagent for removing photoresist contains glycolic acid components and one or more other components, and the method comprises: adding material self-organizing monolayer to glycol component; and then adding to the material semiorganic is the existing monolayer and a glycol component, the remaining components of the reagent for removing photoresist. Glycol component may contain a glycol ether, and the remaining components contain 2-amino-ethanol and deionized water.

In accordance with a third aspect of the present invention, the proposed mixture of reagents for removal of photoresist containing material self-organizing monolayer and also includes a reagent for removal of photoresist to dissolve the photoresist. Material self-organizing monolayer may contain the compound of thiol (mercaptan)containing sulfur, or may contain pentafluorobenzoate. The reagent for removing photoresist may include 2-aminoethanol, glycol ether and deionized water. Moreover, the ratio of material self-organizing monolayer to the reagent for removing photoresist may be about of 0.0001-1%.

Thus, all the above mentioned aspects and options for implementation, the mixture of reagents for removing photoresist may be a solution of reagents for removal of photoresist/mixture of self-organizing monolayers.

BRIEF DESCRIPTION of DRAWINGS

For a better understanding of the invention, the preferred options for implementation will be described by way of examples with reference to the accompanying drawings, in which:

Figure 1 depicts the stages of deposition of the photoresist and applying the template, followed by a stage of etching, in accordance the with the method of photolithography;

Figure 2 depicts the SAM deposition of material on the contacts of the source and drain;

Figure 3 depicts the SAM deposition of material in the channel region;

Figure 4 depicts the SAM deposition of material on top of the contacts and in the region of the channel.

DESCRIPTION of embodiments of the INVENTION

In the embodiment described above, the phase deposition SAM mainly included in the prescribed way, by SAM deposition of material within the existing stages of the photolithographic technique, such as deposition method reagent for removal of photoresist.

Variant exercise can provide a method of forming an electronic device including the SAM layer deposited on the electrodes of the source and drain, to enhance the working functionality of the electrodes of the source and drain, and further creating a more favorable properties of charge injection.

In preferred embodiments, the implementation of the SAM material may be added to the existing stages of the photolithography method by mixing the SAM material to a material with a reagent to remove the photoresist, thereby providing the ability to remove unwanted photoresist and deposition of SAM within the same method.

Another option exercise provides a method of forming an electronic device by forming electrodes of the source and drain, and is after the photolithography, comprising at least one self-organizing monolayer (SAM) on top of the electrical contacts for forming reinforced work functions of the electrodes of the source and drain, and further formation of more favorable properties of charge injection or inside area of the channel to improve the morphology of the film and, thereby, to improve the charge transfer. SAM material is added to the reagent for removing photoresist and is deposited on the stage photolithographic method of forming electrical contacts.

In addition, an implementation option can provide a method of forming an electronic device including the SAM layer, which is deposited on the surface of the substrate to create an improved morphology for charge transfer. The deposition of the SAM material is re-added to the existing photolithography step, by mixing the SAM material with the reagent material removal, thereby reducing the number of steps of the method.

Below, with reference to Figure 1, will be described first variant implementation of the present invention.

Option 1 implementation - deposition of the SAM layer on the basis of thiols together with the reagent for removing photoresist

The substrate 1 is covered with a layer of conductive material 2, as shown in Figa. The substrate may be glass, and polymeric film. According the preferred embodiment of the invention, the substrate is a plastic substrate such as a film of polyethylene terephthalate (PET) or polyethyleneimine (PEN), which can have an optional leveling coating, deposited on a substrate to provide a high quality film. Can be used for the first conductive layer 2, which preferably is a layer of inorganic metal such as silver (Ag), and most preferably gold (Au), but can also be used or any metal which adheres well to the substrate. May be deposited by a two-layer structure including the seed or adhesion layer between the metal layer and the substrate. An alternative can be used conductive polymer, such as polyethyleneoxide doped with polystyrenesulfonate (PEDOT/PSS). Conductive layer preferably sprayed or deposited from solution by means of standard technologies for depositing thin films, including, but not limited to, the coatings by means of centrifugation, dipping, doctor, remove excess with trims, slit extrusion or spraying, printing methods, inkjet, gravure, offset or screen. Mentioned conductive material forms the basis for the electrodes of the source and drain of the transistor.

After the deposition of the conductive layer surface of the substrate is cleaned for the CSOs, to avoid the presence of any organic or inorganic contaminants. Such contaminants can be removed through technologies such as wet chemical processing. Alternatively, the substrate with deposited gold layer is placed under a UV lamp. The UV lamp emits at a wavelength of 172 nm and cleans the surface of the substrate from contaminants such as hydrocarbons. The ultraviolet light reacts with oxygen with the formation of ozone. Then the next ozone reacts with hydrocarbons on the surface of the substrate to eliminate the remaining hydrocarbons.

Then, the substrate is prepared by heating to a temperature sufficient to drain any moisture that may be present on the surface of the substrate. Can be used with liquid or gas stimulator adhesion, such as bis(trimethylsilyl)amine to promote adhesion of the photoresist to the surface of the substrate.

The substrate is covered with a photoresistive material 3, through technologies such as coverage by centrifugation, slit and doctor, as shown in Figa. So photoresistive material may be AZ1500 (AZ) or SU8 (Microchem). Viscous, liquid photoresist is distributed on the substrate and the substrate is unwound to obtain a uniform thickness layer of photoresist on the surface of the substrate. The coating method of the centrifuge holds the financing is usually done with speed from 1200 to 4800 rotations per minute for 30 to 60 seconds and forms a layer thickness of from 0.5 to 2.5 μm. Covered by the photoresist, the substrate is then pre-heated to remove excess solvent, typically at a temperature of from 70 to 100°C for 30 minutes.

Part of the conductive material may then be pattern generated by technologies such as laser ablation, optical lithography and wet etching. For example, the channel region of the thin-film transistor TFT can be determined at the first stage, leaving, at the same time, the remaining area of the film without applying a template. This method is used to determine the conductive material to create areas of channel 5 device. Preferably, to determine contacts the source and drain can be used standard methods of photolithography.

After pre-heating the photoresist layer is exposed to intense light 6 through a specially designed photomask for the application of the relief, as shown in Figv. Typically, in optical photolithography is used ultraviolet light. This method uses the positive photoresist that becomes soluble in a base developer when exposed to light. This chemical change makes it possible to remove part of the photoresist solution, called developer. The developer is deposited using technologies such as a method of coating centrifuging what W. The developers initially contain sodium hydroxide (NaOH) or Tetramethylammonium (TMAH).

The resulting substrate and the pattern of the photoresist can then be dried to zadumivatsa. Typically, the substrate zadumivaetsa at a temperature in the range 100°C to 150°C for 30 minutes. Step of the method of zadabrivaniya makes solid material of photoresist, creating a more durable protective layer for subsequent stages of etching.

During phase etching (Figs) chemical substance removes the topmost layer of the substrate in the areas not protected by photoresist, as in the previous steps of the method. Alternatively, technology is used for dry etching, since they can be made anisotropic, in order to avoid significant protravlivanija pattern of photoresist. It is important that the width of the characteristic elements has been determined, the same or less than the thickness of vytravlivaetsya material.

After photoresistive material is no longer needed, the photoresist layer is removed from the substrate. This usually requires a liquid reagent for the removal of the photoresist, solvent photoresistive material. The reagent for removing photoresist may contain a self-organized monolayer (SAM). Self-organising there are a monolayer, which is suitable for deposition of gold (Au), is pentafluorobenzoate. However, other SAM materials include other compounds thiols, containing sulfur, which contact the surface on which deposited, such as gold. SAM materials on the basis of silane compounds can be used for deposition on acrylics or other of the alignment layers of the substrate. Such material removal may include component parts, such as 2-aminoethanol, glycol ether or deionized (DI) water. SAM can be added to the reagent for the removal of some of 0.0001-1%. A suitable material for the removal of photoresist includes (Nagase) N321. It was noted that some SAM materials smelly adding to material removal. Although this will not necessarily lead to adverse effects on the characteristics of such a smell can be undesirable in large volumes. To avoid this smell, the most preferred recipe for making would be to first add the SAM material to a component, a glycol ether reagent to remove, and then add the remaining ingredients for the formation material of the reagent for removal. However, it was noted that the SAM material can be added directly to the reagent to remove without prejudice to the final characteristics of the solution.

The mixture of the reagent for removing photoresist and SAM then deposited on the electrical contacts, comprising the photoresist by coating raspy is the group of as shown in figure 2. The presence of SAM 6 on the electrodes of the source and drain can change the surface energy of the contacts of the source and drain through the expansion of business functions conductive elements and, thus, making possible a more favorable injection of charges from the contacts to the semiconductor. In addition, the SAM material can prevent contamination of the gold contacts of the source and drain. Pollution can be in the form of, for example, hydrocarbons, formed on the surface of the electrodes of the source and drain. After application of the conductive layer pattern to form source electrodes and drain, the surface of the substrate is then cleaned by rinsing in DI water or PGMEA in order to eliminate the presence of any organic or inorganic contaminants. Such contaminants can be removed by methods such as wet chemical etching.

In the case of deposition of the SAM on gold (Au), removal of photoresist and deposition of self-organizing monolayer occurs during the same step of the method, thus reducing the total number of steps of the method and ensures optimum purity gold for adhesion to the SAM material. Affinity SAM material with a gold layer may further contribute to the destruction of photoresistive material from the surface of the gold. Reagent to remove deletes photoresistive atella and at the same time, deposited SAM and attached to the gold. Combining these two stages, you can minimize the likelihood of contamination on the gold surface and to provide adhesion SAM to gold in its purest state.

Further, the affinity of self-organizing monolayer with gold contacts can eliminate the need of ozone stage in the way. This affinity occurs through the formation of ties between gold and sulfur atoms of the compounds thiols. Destruction of the ozone stage is preferable because ozone has a high-energy surface, it is difficult to maintain for any length of time and he is very receptive to coming out of the air pollutants that can affect the underlying layers of the device structure. Self-organizing monolayer is more stable connection than with ozone and therefore is the preferred connection.

Once on the conductive layer was applied a template for the formation of electrodes of the source and drain of the above-described photolithographic method and self-organizing monolayer was deposited on top of the contacts of the source and drain, then you can bind the layer of semiconductor material using techniques such as vapor deposition. The semiconductor layer may consist of materials such as, is not limited to, derived from triarylamine, pentacene, Polyarylamide, polyflora or polythiophene. A wide range of printing technologies can be used for the deposition of semiconductor materials, including but not limited to inkjet printing, soft lithographic printing (J.A. Rogers et al., Appl. Phys. Lett. 75, 1010 (1999); S. Brittain et al., Physics World May 1998, p. 31), screen printing (Z. Bao, et al., Chem. Mat. 9, 12999 (1997)), applying the template by photolithography (see WO 99/10939), offset printing, slot coating or coating methods, dipping, pouring, meniscus coating, spraying, extrusion coating or flexographic printing.

The above is also true for SAM materials on the basis of silane deposited on acrylic or other screeds, as described below in option 2 implementation.

Option 2 implementation - SAM material, deposited on the surface of the substrate

Alternatively, figure 3 shows that after applying the pattern on the conductive layer for forming the electrodes 4, 5 of the source and drain using the above described method of photolithography on the surface of the substrate may be deposited self-organizing monolayer 7, such that SAM stick to the surface of the substrate and contacts the source and drain is not, as shown in Figv. SAM material is mixed with the reagent for removing photoresist and this mixture is used on the existing stage totalitar the practical method of removing photoresist, during which the mixture is deposited on the surface of the substrate, including the electrical contacts. The deposition of the SAM on the surface of the substrate has the effect of improving the transport of charges through the control of morphology.

Alternatively, the SAM material required for deposition in the channel region of a semiconductor, can be added at the stage of the etching method, by mixing the SAM material to provide the Etchant used to remove the conductive layer in contact with the alignment layer or the substrate.

Option 3 implementation the First SAM material is deposited on the contacts of the source and drain, and the second SAM material is deposited on the surface of the substrate

In an additional embodiment, presented in figure 4, on the conductive layer pattern for forming the electrodes 4, 5 of the source and drain in accordance with the above described method of photolithography, followed by the deposition of the SAM material 6 on the contacts of the source and drain in the method of removing the photoresist, so that the SAM material which adheres to the surface of the electrical contacts. Another SAM material 8 may be deposited during this stage of the method on the surface of the substrate, so that SAM which adheres only to the surface of the substrate, but not to the contacts of the source and drain, as shown in Figv. In the different layers of the SAM formed over the electrode and source and drain and the substrate.

Devices such as TFT manufactured as described above may be part of more complex circuits or devices in which one or more of these devices may be integrated with each other and/or with other devices. Examples of applications include the logical schema and the schema of active matrix display devices or memory devices or a user-defined logical schema of the matrix.

The applicant here discloses in isolation each individual feature, described here, and any combination of two or more such features, to the extent that such features or combinations are capable of running on the basis of the present description as a whole, in light of the General knowledge of experts in the fields of technology, without regard to whether such features or combinations of any of the tasks disclosed here or not, and without limitation of the scope of the claims. The applicant indicates that aspects of the present invention can consist of any such individual characteristics or combinations of characteristics. In view of the descriptions specialists in the field of technology will be obvious that within the scope of the present invention may be made of various modifications.

1. The method of forming an electronic device that includes a substrate and a conductive layer, the method contains the steps, which is:
remove the photoresist with at least one surface conductive layer of the specified electronic device using a mixture of reagents for removal of photoresist,
the mixture of reagents for removal of photoresist contains a first material self-organizing monolayer and a reagent for removal of photoresist to dissolve the photoresist,
thus precipitated self-organizing monolayer on at least one surface of the specified conductive layer and the precipitated semiconductor material on self-organizing monolayer deposited on a conductive layer, without ozone purification conductive layer.

2. The method according to claim 1, wherein the electronic device comprises a source electrode and a drain electrode and a channel of a device, the neighboring electrodes of the source and drain, and at least one surface of the conductive layer contains a surface of the source electrode and the electrode surface runoff.

3. The method according to claim 1, wherein the electronic device comprises a source electrode and a drain electrode and a channel of a device, the neighboring electrodes of the source and drain, while the surface of the substrate includes a surface channel device.

4. The method according to claim 1, wherein the electronic device comprises a substrate, a source electrode and a drain electrode and a channel of a device, the neighboring electrodes of the source and drain, while the surface of the substrate contains the it surface channel device, and at least one surface of the conductive layer contains a surface of the source electrode and the electrode surface runoff.

5. The method according to claim 3 or 4, in which self-organizing monolayer is the first emergent monolayer, the method further comprises the steps are:
precipitated material of the second self-organizing monolayer that is different from the material of the first self-organizing monolayer on the surface of the substrate.

6. The method according to claim 5, which further comprises a step, which uses the photoresist in the photolithographic process of applying the template to the specified conductive layer for forming the source electrode and the drain electrode.

7. The method according to any one of claims 1, 2 or 4, in which the material of self-organizing monolayer contains thiol compounds containing sulphur.

8. The method according to any one of claims 1, 2 or 4, in which the material of self-organizing monolayer contains pentafluorobenzoate.

9. The method according to any of items 1, 2, or 4 in which the reagent for removing photoresist contains 2-aminoethanol, glycol ether and deionized water.

10. The method according to any one of claims 1, 2 or 4, in which the ratio of the number of material self-organizing monolayer to the amount of reagent to remove the photoresist is approximately in the range from 0.0001 to 1%.

11. The method according to any one of claims 1, 2 or 4, to the m specified conductive layer contains silver or gold.

12. The method of forming an electronic device that includes a substrate and a polymer film, the source electrode and the drain electrode and the channel of the device adjacent to the electrodes of the source and drain, while the surface of the substrate includes a surface channel device, and at least one surface of the conductive layer contains a surface of the source electrode and the electrode surface runoff,
the method includes the steps are:
removing the photoresist from the surface of the channel of the electronic device using a mixture of reagents for removal of photoresist,
the mixture of reagents for removal of photoresist contains a first material self-organizing monolayer and a reagent for removal of photoresist to dissolve the photoresist,
thus precipitated self-organizing monolayer on a polymer film on the surface of the channel of the electronic device.

13. The method according to item 12, in which this substrate is a film of polyethylene terephthalate or polyethyleneamine.

14. The method according to item 12 or 13, in which the material of self-organizing monolayer contains a silane.

15. The method according to item 12 or 13, which further use of the photoresist in the photolithography process for forming a pattern on the conductive layer to form the source electrode and the drain electrode.



 

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20 ex

FIELD: polygraphic, electronic and radiotechnical industry.

SUBSTANCE: invention proposes a polyvinyl alcohol-base oxidizing composition for removal of tanned polymeric layer that comprises the following components, wt.-%: sodium or potassium metaperiodate or sodium or potassium dihydro-ortho-periodate, 20-70; magnesium or calcium, or aluminum salt or salts, 20-70, and one or more crystalline organic acids, 5-50. Invention provides enhancing effectiveness of regeneration of net-stencil printing screens and to improve retention of oxidizing compositions. Invention is used for regeneration of netted-stencil printing screens prepared with use of photoresist materials.

EFFECT: improved and valuable properties of composition.

20 ex

FIELD: chemistry.

SUBSTANCE: method of treating a liquid involves decomposition of a resin in the liquid by bringing ozone gas into contact with the liquid which contains a water-soluble carbonyl compound and resin. The method of treating a liquid also involves removal of organic acid formed during resin decomposition from the liquid by subjecting the liquid to ion exchange on an ion-exchange resin after decomposition. The ion-exchange resin contains anion-exchange resin. The liquid undergoing ion exchange contains water. The water-soluble carbonyl compound is at least one compound selected from y-butyrolactone, ethylene carbonate, ethylene acetate and glycerol acetate. Also, the liquid used for contact with ozone gas during decomposition is obtained by using a liquid containing a water-soluble carbonyl compound and water as a solvent, and removing the resin from the substrate containing resin.

EFFECT: reusing exfoliating liquid to remove resin components, using an exfoliating liquid which does not cause metal corrosion on the substrate.

11 cl, 3 dwg

FIELD: physics.

SUBSTANCE: invention relates to semiconductor technology. Proposed method comprises removal of photoresist from at least one surface of conducting layer with the help of the mix of chemical including first material of self-optimising monolayer and chemical to remove said photoresist. Thus self-optimising monolayer is deposited on at least one surface of said conducting ply. Semiconductor material is deposited on self-optimising monolayer applied on conducting layer without ozone cleaning of conducting layer.

EFFECT: simplified method.

15 cl, 4 dwg

FIELD: electricity.

SUBSTANCE: invention is related to manufacturing method of electric devices that includes the following stages: 1) application of insulating dielectric layer consisting of one material with low and ultralow dielectric permeability to substrate surface; 2) application of positive or negative resist coating to surface of insulating dielectric layer; 3) subject of resist coating to selective impact of electromagnetic radiation or corpuscular radiation; 4) development of selective radiated resist coating in order to form a pattern in resist; 5) dry etching of insulating dielectric layer using pattern in resist as mask for formation of wire channels and/or feedthrough openings communicated with substrate surface; 6) selection of at least one polar organic solution (A) from the group consisting of diethylenetriamine, N-methyl imidazole, 3-amine-1-propanol, 5-amine-1-pentanol and dimethyl sulfoxide developing in presence of 0.06 up to 4 wt % of dissolved hydroxide tetramethylammonium (B), which mass fraction is taken on the basis of full weight of the respective tested solution, permanent intensity of removal at 50°C for polymer barrier antireflecting coating with thickness of 30nm that contains chromophoric groups absorbing deep UV light; 7) provision of at least one composite for resist removal that does not contain N-alkyl pyrrolidone and hydroxylamine and hydroxylamine derivants and has dynamic shear viscosity at 50°C from 1 up to 10mPa·s measured by rotating-cylinder technique, and contains, based on the full weight of the composite, (A) from 40 up to 99.95 wt % of at least one polar organic solution selected in compliance with the process stage (6), (B) from 0.05 up to <0.5 wt % of at least one quaternary ammonium hydroxide, based on full weight of the composite, and (C) < 5 wt % of water, based on full weight of the composite; 8) removal of resist pattern and smutty residue by means of damp process using at least one composite for resist removal (7) produced in compliance with the process stage (7); and 9) filling of wire channels (5) and feedthrough openings (5) with at least one material having low electric resistance. The invention is also related to usage of this composite.

EFFECT: composite is capable of removal of positive and negative photo resists and PER in identical and the most advantageous way without damage of surface layers of wafers, relief structures of wafers and gluing material connecting thin silicon wafers with substrates.

14 cl, 3 tbl, 4 ex

FIELD: chemistry.

SUBSTANCE: invention relates to composition for photoresist removal after ionic implantation, which contains: (a) amine, (b) organic solvent A, and (c) co-solvent, where content of water in composition constitutes less than 0.5 wt % of composition; amine represents quaternary ammonium hydroxide and is present in quantity from 1 to 4 wt % of composition; organic solvent A is selected from the group, consisting of dimethylsulphoxide (DMSO), dimethylsulphone (DMSO2), 1-methyl-2-pyrrolidinone (NMP), γ-butirolactone (BLO)(GBL), ethylmethylketone, 2-pentanone, 3-pentanone, 2-hexanone and isobutylmethylketone, 1-propanol, 2-propanol, butyl alcohol, pentanol, 1-hexanol, 1-heptanol, 1-octanol, ethyldiglycol (EDG), butyldiglycol (BDG), benzyl alcohol, benzaldehyde, N,N-dimethylethanolamine, di-n-propylamine, tri-n-propylamine, isobutylamine, sec-butylamine, cyclohexylamine, methylalanine, o-toluidine, m-toluidine, o-chloroaniline, m-chloroaniline, octylamine, N,N,-diethylhydroxylamine, N,N,-dimethylformamide and their combination; co-solvent is selected from the group, consisting of isopropyl alcohols, isobutylalcohols, sec-butyl alcohols, tert-pentyl alcohols, ethyleneglycol (EG), propyleneglycol, 1,2-propanediol, 1,3-propanediol, 1,2,3-propanediol, 1-amino-2-propanol, 2-methylamino-ethanol (NMEA), N-ethyldiisopropylamine and their combination; and quantity of organic solvent A and co-solvent constitutes 84, 90-99 wt %. Claimed invention also relates to method for photoresist removal after ionic implantation.

EFFECT: obtaining water-free composition for photoresist removal after ionic implantation.

11 cl, 2 dwg, 5 tbl, 5 ex

FIELD: technologies for making transistors.

SUBSTANCE: method includes following stages: precipitation of electric-conductive material on substrate of semiconductor material, forming of shape of first parallel band electrodes with step, determined by appropriate construction rules, while areas of substrate in form of stripes between first electrodes are left open, precipitation of barrier layer, covering first electrodes down to substrate, alloying of substrate in open areas, precipitation of electric-conductive material above alloyed areas of substrate with forming of second parallel band electrodes, removal of barrier layer, near which vertical channels are left, passing downwards to non-alloyed areas of substrate between first and second electrodes, alloying of substrate in open areas of lower portion of channels, filling channels with barrier material, removal of first electrodes, during which gaps between second electrodes are left and substrate areas are opened between them, alloying of open areas of substrate in gaps, from which first electrodes were removed, removal of electric-conductive material in said gaps for restoration of first electrodes and thus making an electrode layer, containing first and second parallel band electrodes of practically even width, which are adjacent to alloyed substrate and separated from each other only by thin layer of barrier material, while, dependent on alloying admixtures, used during alloying stages, first electrodes form source or discharge electrodes, and second electrodes - respectively discharge or source electrodes of transistor structures, precipitation of insulating barrier layer above electrodes and separating barrier layers. Precipitation of electric-conductive material above barrier layer and forming in said electric-conductive material of shape of parallel band valve electrodes, directed transversely to source and discharge electrodes, thus receiving structures matrix for field transistors with very short channel length and arbitrarily large width of channel, determined by width of valve electrode.

EFFECT: ultra-short channel length of produced transistors.

11 cl, 17 dwg

FIELD: electronic engineering; high-power microwave transistors and small-scale integrated circuits built around them.

SUBSTANCE: proposed method for producing high-power microwave transistors includes formation of transistor-layout semiconductor wafer on face side, evaporation of metals, application and etching of insulators, electrolytic deposition of gold, formation of grooves on wafer face side beyond transistor layout for specifying transistor chip dimensions, thinning of semiconductor wafer, formation of grooves on wafer underside just under those on face side, formation of through holes for grounding transistor leads, formation of integrated heat sinks for transistor chips around integrated heat sink followed by dividing semiconductor wafer into transistor chips by chemical etching using integrated heat sinks of transistor chips as mask.

EFFECT: enhanced power output due to reduced thermal resistance, enhanced yield, and facilitated manufacture.

2 cl, 1 dwg, 1 tbl

FIELD: electricity.

SUBSTANCE: manufacturing method of microwave transistor with control electrode of T-shaped configuration of submicron length involves formation on the front side of semi-insulating semi-conductor plate with active layer of the specified structure of a pair of electrodes of transistor, which form ohmic contacts by means of lithographic, etching method and method of sputtering of metal or system of metals, formation of transistor channel by means of electronic lithography and etching, application of masking dielectric layer, formation in masking dielectric layer of submicron slot by means of electronic lithography and etching; at that, submicron slot is formed with variable cross section decreasing as to height from wide upper part adjacent to the head of the above control electrode to narrow lower part adjacent to transistor channel, formation of topology of the above control electrode by means of electronic lithography method, formation of the above control electrode in submicron slot by means of sputtering of metal or system of metals; at that, configuration of its base repeats configuration of submicron slot. During formation of submicron slot with variable cross section in masking dielectric layer, which decreases throughout its height, by means of electronic lithography and etching, the latter of masking dielectric layer is performed in one common production process in high-frequency plasma of hexafluoride of sulphur, oxygen and helium and discharge power of 8-10 W.

EFFECT: increasing output power and amplification factor, increasing reproducibility of the above output parametres and therefore yield ratio, simplifying and decreasing labour input for manufacturing process.

2 cl, 1 dwg, 1 tbl, 5 ex

FIELD: electricity.

SUBSTANCE: field transistor manufacturing method includes creation of source and drain contacts, active area identification, application of a dielectric film onto the contact layer surface, formation of a submicron chink in the dielectric film for the needs of subsequent operations of contact layer etching and application of gate metal through the resistance mask; immediately after the dielectric film application one performs lithography for opening windows in the dielectric at least one edge whereof coincides with the Schottky gates location in the transistor being manufactured; after the window opening a second dielectric layer is applied onto the whole of the surface with the resistance removed; then, by way of repeated lithography, windows in the resistance are created, surrounding the chinks formed between the two dielectrics; selective etching of the contact layer is performed with metal films sprayed on to form the gates.

EFFECT: simplification of formation of under-gate chinks sized below 100 nm in the dielectric.

6 dwg

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