IPC classes for russian patent Method of increasing yield ratio when manufacturing high-density electronic modules. RU patent 2511007. (RU 2511007):
Another patents in same IPC classes:
Method of determining resistance of electronic components and units of radioelectronic equipment to ionising radiation / 2504862
Method involves using three parametric Weilbull distributions or a confidence interval the inner boundaries (u - lower and v - upper) of which are obtained based on processing experimental exposure data of a sample with a size n, outer boundaries (U - lower and V - upper) are set from common physical presentations, the defining presentations of which are the level of absence of observed critical changes and slight (20-30%) exceeding of requirements for resistance of units to the effect of ionising radiation; including the experimentally obtained integral function of distribution of lower acceptable levels of resistance to different types of ionising radiation in the selected boundaries (U, V); determining the rate of change of probability of parametric or functional failures (intensity of variation of the parametric resource); plotting a family of curves of the distribution function F(U, x) of different types of ionising radiations (neutron fluence (Fn); gamma/X-ray radiation dose rate (Pγ-x-Ray); full absorbed dose (Dγ-x-Ray); heavy charged particle fluence Fion; linear energy loss value (LET) (for spacecraft-mounted equipment, etc) at fixed values ; determining from the plotted curves the radiation load level where the failure probability of the device is Fcrit, or the operability maintenance resource Rsokhr=1-Fcrit. |
Method of measuring diffusion length of minority charge carriers in semiconductors and test structure for implementation thereof / 2501116
Contact electrodes which are insulated from the base layer by a dielectric layer are made in the test structure which is made on a common base layer on the surface of p-n or n-p junctions of photodiodes. The radii of contact electrodes are greater than the radii of p-n or n-p junctions of photodiodes and have a common axis of symmetry. A contact is made on the surface of the base layer. The test structure is illuminated in the absorption spectral range of the base layer on the side of contact electrodes which are not transparent for infrared radiation. Photodiode photocurrents are measured and the ratios of photocurrents of two photodiodes in the test structure are determined. Theoretical calculation of photocurrents of different photodiodes of the test structure is performed and curves of the ratio of photocurrents of photodiodes versus the diffusion length of minority charge carriers are plotted. The measured photocurrent ratios are compared with theoretical values calculated from the curves and the diffusion length of minority charge carriers is determined. |
Contacting device / 2498449
Contacting device is made as a frame with a flexible printed circuit stretched on it and protrusion with external connector; at the flexible printed circuit there are oriented fixed patterns with reach-through windows for placement of controlled electronic components; at surface of the flexible printed circuit conductors with their peaks form lamellae with contact areas in compliance with topology of contact areas for the controlled components. At that total gap between the pattern window and electronic component should not exceed the distance between adjoining lamellae; between the base of contacting device and flexible printed circuit there is an elastic gasket made of material having properties of elastic strain; electronic components placed in the pattern windows at the other side have a thermal contact with heat sink which serves at the same time as a mechanical holdback; at the surface of heat sink and frame contacting with flexible printed circuit there is an applied electric insulating coating. |
Method of diagnosing semiconductor epitaxial heterostructures / 2498277
In the method of diagnosing semiconductor epitaxial heterostructures, which involves step-by-step scanning of a sample in Bragg reflection conditions, carried out by varying the angle of incidence of the X-ray beam, using single-crystal X-ray diffractormetry with a non-monochromatic, quasi-parallel X-ray beam and a position-sensitive detector, the X-ray tube and the detector are placed relative the angular position of the characteristic peak θ from one of the systems of crystallographic planes of the heterostructure at an angle θ1=θ±(0.5°-4°); based on the deviation of the position of the interference peak of deceleration radiation on the scale of the detector from the angle of incidence of the X-ray beam, the error of the position of the sample is determined; based on the obtained error, the tube is placed in a position Δθ by independent displacement, where the axis of symmetry between the tube and the detector is perpendicular to the chosen system of crystallographic planes; at that position of the tube, step-by-step scanning is carried out in a range of angles which characterise the selected system of crystallographic planes; through independent displacement, the tube is placed at an angle Δθ1=Δθ±(0.2°-1°), thereby bringing the maximum of the deceleration peak beyond the boundaries of the characteristic peak; step-by-step scanning of all layers of the heterostructure is performed, leaving unchanged the angular position of the characteristic peak from the system of crystallographic planes by moving the scale of the detector, and angular positions of the peaks of all layers of the heterostructure are determined. |
Method of detecting quantum dots and apparatus for realising said method / 2493631
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Method of measuring local electromagnetic fields on surface of heterostructures / 2491679
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Method to detect structural defects in silicon / 2486630
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Method to monitor life time of minority charge carrier in silicon bars / 2486629
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Measurement method of life cycle of minor charge carriers in silicon / 2484551
In the measurement method of life cycle of minor charge carriers in silicon, which involves heating of a silicon ingot to the temperature of not less than 80°C, lighting of the ingot end with pulse exciting beam L1 with wave length λ1=1.15+1.28 mcm and lighting of side surface of the ingot with sounding beam L2 with wave length λ1<λ2≤6.0 mcm, crossing of beams L1 and L2 inside the ingot, recording of beam L2 that passed through the ingot, measurement of time dependence of intensity of beam L2 that passed through the ingot with further determination of life cycle of minor charge carriers for coordinate of a cross point of beams L1 and L2 and scanning of volume of the ingot with the above intersection area and determination of life time of minor charge carriers for scanned areas. Lighting of the ingot with beam L1 is performed through a flat focusing lens, a flat focus of beam L1 is located in the intersection plane of beams L2, and scanning of the ingot volume is performed with the intersection area of beams L2 with focus of beam L1. |
Method of producing nanosized thin-film standard sample of chemical composition / 2483388
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Method for determining silylation selectivity in photolithographic processes using chemical gas-phase modification of photoresist film near-surface layer / 2244363
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Method for equalizing of reliability at rejection of semiconductor devices / 2247402
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Method for rejection of unreliable low-power transistors / 2247403
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Method for measuring electrophysical parameters of thin silicon dioxide films of gates / 2248067
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Method for contactless detection of near-surface bend of semiconductor energy band / 2248068
Proposed method that can be used for contactless evaluation of near-surface bend of semiconductor specimen energy bands including wafers covered with natural oxide or that applied by dielectric technique involves use of Kelvin probe to measure surface potentials in the dark and at least two times while illuminating semiconductor surface with light from inherent absorption region with known intensity ratio. Contact potential differences obtained in the dark and at different light intensity ratios are used to calculate near-surface bend of semiconductor energy bands by numeric solution of equation derived from constant value of near-surface semiconductor area. |
Method and device for monitoring end-of-etching moment in high- frequency and microwave discharge plasma used in semiconductor device manufacturing technology / 2248645
Proposed method used for monitoring moment of completion of plasma-chemical etching of micro- and nanoelectronic structure layers includes measurement and treatment of plasma optical emission modulated signal at characteristic wavelength of particle-reagent or particle-product of surface reaction whose intensity varies at end-of-etching moment for layer being removed within area of open windows in lithographic mark; for the purpose use is made of forced low-frequency amplitude modulation of high or microwave carrier frequency of plasma-shaping generator affording modulation of optical plasma emission followed by recording emissive intensity of plasma component which is reagent or product in surface reaction, use being made of phase (synchronous) detection method, where forced low-frequency modulation signal of plasma-shaping generator is used as reference signal. |
Method and device for monitoring plasma-chemical etching processes using differential optical actinometry / 2248646
Real-time monitoring of plasma-chemical etching processes using differential optical actinometry includes mixing of gas-source of chemically active particles and inert gas-actinometer complying with optical actinometry conditions in definite proportion; their supply to reactor chamber followed by measurement of intensities of chemically active particle (chemical agent) emission line in surface reaction and emission line of gas-actinometer in plasma in the course of plasma-chemical etching in plasma-chemical reactor according to algorithm of monitoring actinometric rate-of-layer etching, process selectivity, and end-of-etching moment; in the process mixture of gas-source of chemically active particles and gas-actinometer prepared in advance is supplied to one gas admission channel; used as controlled variable is signal controlling normalization of actinometer emission line intensity at which differential signal between emissive intensities of chemically active agent or particle in surface etching reaction and gas-actinometer on characteristic wavelength from plasma volume tends to zero. |
Method for grading semiconductor devices / 2251759
Proposed method designed for grading semiconductor devices by criterion of their potential reliability both in the course of manufacture and during inspection tests at manufacturing plant includes measurement of low-frequency noise of semiconductor devices at two currents. Potential reliability of device is judged by tangent of tilt angle of curve showing noise intensity as function of current for each device found from equation Estimate criterion is tgαi ≤ tgαcr for high-reliability transistors and tgαi > tgαcr for lower-reliability transistors. The > tgαcr value is found experimentally in the course of grading devices of each type. |
Method for sorting out semiconductor devices / 2253168
Noise-factor is measured on sampled semiconductor device at currents up to 1 mA, ampere-noise characteristics are constructed for maximal and minimal values, current causing highest difference in ampere-noise characteristics is evaluated, and mean noise-factor value is found for given currents. is used for sorting out Lot of instruments is sorted out with respect to their reliability by deviation of noise-factor of each device from mean value at given current. |
Flaw inspection method for silicon-on-insulator films / 2256256
Proposed method used to inspect epitaxial silicon layers grown on insulating substrates for structural perfection includes ellipsometric measurements of film refractive index at different positions of structure adjusted by rotating it about normal to surface; measurement results are used to evaluate coefficient of anisotropy A = 1 - nmax/nmin, where nmax, nmin are maximal and minimal refractive indices, respectively. Degree of film unsoundness is judged by coefficient of anisotropy. |
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FIELD: physics.
SUBSTANCE: invention relates to microelectronics and can be used to increase yield ratio when manufacturing high-density electronic modules. When manufacturing high-density electronic modules by forming built-in passive elements, directly assembling active elements (chips) and layered formation of interconnections before manufacturing and assembling the electronic elements, a modification of the circuit is produced, which is intended only for testing thereof, and multifunctional probing of operating capacity of each element is carried out using processing procedures after forming passive elements and assembling active elements and before forming interconnections.
EFFECT: wider range of methods of lowering the cost of manufacturing high-density electronic modules, high yield ratio.
7 dwg
The technical field
The invention relates to the electronics, but rather to microelectronics.
What is the yield in this case?
The output - characteristics of "quality of technological process, showing the share of fit (non-defective products manufactured in the party (or group harvesting).
The yield, as a rule, defined as the ratio of the number of suitable products to total volume of the party (the number of products on the group harvesting) and expressed in percentage. Usually this takes into account the so-called useful items from the first pass, i.e. not subject to repair and restoration, but in some cases the output from the first pass isolated as a separate feature" (http:/www.elinform.ru/dictionary_262.htm).
Actually increasing the yield means reducing the cost of electronic modules.
The technical result of the invention is expanding Arsenal of ways to reduce the cost of manufacturing high-density electronic modules.
The level of technology
Contact analogues.
One of the ways to reduce cost of manufacturing of electronic modules offered in the Russian patent 2133522 "Method of manufacturing and control of electronic components".
"The way of manufacturing and control of electronic components is that many crystals have in the press-form, focusing on the contact site crystals and basic elements of the mold, isolate all the unprotected surface of the crystals, except pads. The specificity of the method is that when placed in the mold crystals fixed among themselves with the formation of a group of media, providing location front surfaces of crystals in a single plane to one of the surfaces group of the media, while on the plane put together all of conductors required to electrochemotherapy and control, as well as the external connector of the carrier. Simultaneously with the crystals in the mold is placed in group a metal frame, frame capture simultaneously with crystals. Group media can be also formed a flexible PCB, combined with a rigid Foundation. The technical result of the invention is cheaper processes electrochemotherapy and finishing control, reduction of technological Assembly process and control of electronic components."
The other way is increasing the yield at the expense of high reliability of interconnection (Russian patent 2193259).
Also offers design testability schemes in their design.
"Designing testability schemes in their design (Design-For-Testability, DFT) is a crucial and integral part of modern design electronic circuits and printed circuit boards. The expected level testability (in per cent coverage of those or other, and preliminary testing, defects) is usually laid in the technical requirements of new developments and confirmed by computer simulation testability before
how starts the manufacture and installation of printed circuit boards, components and systems. Rules testable design <...> suggest modification of topology and/or relationships between elements in the schema, or even adding additional elements (in-circuit or external)that could not be linked with the functioning of the scheme and are intended only for ensure its testability" (http://www.jtag-test.ru/Solutions/DFT.php).
This method chosen for the prototype.
Disclosure of the invention
The yield in the manufacture of electronic modules is an important characteristic of production. In the manufacture of high-density, functionally and physically saturated electronic modules (ITEM) their performance depends on a large number of reasons. The most significant impact on increasing the yield has an efficiency of passive elements after their formation, and active elements after their installation. Traditionally applied input control the health of active elements in limited conditions, intermediate technological control of passive elements and final inspection of the functioning of the finished module together with the tests in the working range of temperatures and other conditions. As a result, the output stage control only fixed a broken ITEM caused by the inability of the previous full control of the elements in the range of working temperatures and other conditions. There is no possibility in advance, at the initial stages of manufacturing ITEM, significantly affect the yield, due to such problems.
To solve it is proposed to change the composition and sequence of operations of manufacturing ITEM so that the efficiency of active and passive elements within the working range of conditions could be controlled at the initial stage of manufacture. Then holding the other less critical operations of manufacturing ITEM insignificant impact on the yield. As a result, the yield ITEM will be determined by the control at the initial stage of manufacture.
To achieve the goal proposed in the technological route after the formation of the passive components and direct mounting of active elements to spend their sealing of insulating compound that helps protect them from external influence in the range of operating conditions. Then to form known methods (photolithography, laser treatment, metallization, planarization and others) contact pin and before the next layer-by-layer formation interconnects known ways to spend full probe control performance of each item in the desktop range of temperatures and other external conditions.
To be able to carry out consecutively the following process steps, illustrated in figure 1-7:
1. Insignificant operations.
2. Preparing the substrate surface.
3. The formation ustroennyj thin film elements of R, C, L, microstrip elements, etc. In figure 1 as an example, shown resistance 1 and condenser 2 with dielectric 3 substrate 4.
4. Performing direct mount crystals integrated circuits (chips) of different types (microwave monolithic integrated circuits, VLSI, microelectromechanical systems, systems on crystal, power Assembly, single semiconductor elements, sensors, passive elements in the "chip"is performed, and others). In figure 2 it is depicted in figure 1 added chip 5.
5. Fill formed on the substrate of a set of elements with a layer of insulating polymer above the level of the highest item on the value of linefill, for example known photopolymer SU-8 in 5-50 microns above the level of the surface of crystals (polymer 6 figure 3).
6. The autopsy areas of contacts to be drenched elements, such as photolithography (contact area 7 figure 4).
7. Filling metallization opened Windows in polymer layer, for example, by vacuum deposition and galvanic rearing of copper layer on the depth of the opened Windows (metallization 8 figure 5).
8. Planarization (for example, flat grinding and chemical-mechanical polishing) of the surface layer formed to complete separation of all contacts (Fig.6).
9. Surface cleaning contacts to ensure their minimum ohmic resistance and electric probes in subsequent operations (6).
10. Execute full control of all elements by putting the substrate on specialized termostali holder, serial attach probes to the contacts of the elements and the required measurements (7 shows tester 9, the capacity gauge 10 and functional tester 11).
11. The direction of technological modules that have successfully passed the inspection, for subsequent technological operations and removal from the route have not passed the inspection.
12. Insignificant operations.
Brief description of drawings
Figure 1 illustrates the formation of a built-in thin film elements.
Figure 2 illustrates how to perform the direct mounting of crystals of integrated circuits (chips) of various types.
Figure 3 illustrates the fill formed on the substrate of a set of elements with a layer of insulating polymer.
Figure 4 illustrates the autopsy areas of contacts to be drenched to the elements.
Figure 5 illustrates the filling metallization opened Windows in the polymer layer.
6 illustrates planarization surface layer formed to complete separation of all contacts and clearing of a surface of contact.
Fig.7 shows how to execute full control of all elements.
The implementation of the invention
At the enterprise within 2 years spend probe control of test samples in accordance with the described method for installing Sammit 12000 company Agilent Technologies (USA). It allowed to increase the number of suitable products after the formation of multilayer fabric switch wiring on average by 27% due to timely rejection of semi-finished products at the initial stage of manufacture.
The way to increase the yield in the manufacture of high-density electronic modules on the basis of the formation of embedded passives, direct mounting of active elements (chips) and layering of interconnection, which consists in the fact that even before the production and Assembly of electronic modules and develop a modification of the scheme, which is intended only for its testability, characterized by the fact that, owing to technological operations after the formation of the passive and installation of active elements and before the formation of interconnection to hold the multifunction probe control the health of each element.
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