Method for determining crystalline phase in amorphous films of nanodimensional thickness

FIELD: nanotechnologies.

SUBSTANCE: bombardment of a surface with an ion beam and recording of intensity of reflected ions is performed; besides, analysed surface is bombarded with inert gas ions with energy of less than 100 eV, and energy spectrum of reflected ions is recorded in the energy range, which is higher than energy of primary ions; then, as per energies of peaks of pair collision in the obtained spectrum there determined are types of atoms in one upper monolayer of atoms, as per the available peak with energy equal to energy of bombarding ions there evaluated is availability of a crystalline phase on amorphous or amorphised surface, including in a film of nanodimensional thickness, and as per the ratio of values of the above peak without any energy losses to a peak or peaks of pair collision there determined is surface concentration of crystalline phase on amorphous or amorphised surface.

EFFECT: reduction of depth of an analysed layer till sub-nanodimensional values; improvement of reliability of analysis results and enhancement of compatibility of equipment for implementation of the method with other analysis methods and process equipment.

2 dwg

 

The present invention relates to the field of nano - and microelectronic devices and analytical instrumentation and can be used in the development and research of properties of thin film structures on amorphous and crystalline materials.

There is a method of determining the crystal surface condition, which consists in the irradiation surface of the electron beam and reception of the reflected electrons (diffraction of slow electrons). A disadvantage of the known method is the low compatibility of analytical devices for its implementation with devices for other methods of analysis or process equipment if vacuum processing. The analyzer apparatus of the method of diffraction of slow electrons takes about the studied object solid angle of more than 120 degrees, which complicates the integration of other analytical devices. The measurements contain information about the translational symmetry and do not contain information about the types of surface atoms [V.T. Cherepin, Vasiliev M.A., Methods and instruments for surface analysis of materials. The Handbook. - Kiev: Naukova Dumka, 1982. - 600 C.].

Closest to the proposed invention is a method for determining the crystalline phase in the amorphous films, which consists in bombarding the surface with an ion beam and a reception intensity of tragen the x ions. This method, also called the method of pathography, is implemented using proton high (>100 Kev) based on Rutherford scattering and has a great depth of the analyzed layer, namely the fraction of a micrometer, which is beyond the limits of nanotechnology dimensions and analytical requirements of microelectronics [2. Lyman K. Interaction of radiation with solids and elementary education defects. / Lane. from English. Geamana. - M.: Atomizdat, 1979. - 296 S.; 3. Petrov N.N., Abroyan IA Diagnosis surfaces using ion beams. Ed. LSU, 1977. 160 S.].

The technical result is to decrease the depth of the analyzed layer to subnanometer values, improving the reliability of analysis results and improve compatibility of the equipment for its implementation with other methods of analysis and process equipment.

The technical result is achieved in that in the method of determination of the crystalline phase in the amorphous films, which consists in bombarding the surface with an ion beam and record the intensity of the reflected ions, the analysed surface is bombarded with ions of inert gas with hyperthermal energy range (below 100 eV) and record the energy spectrum of the reflected ions in the energy range, more energy primary ions, then the energies Pico is a pair collisions in the received spectrum determine the types of atoms in one the top monolayer of atoms, the presence of a peak with energy equal to the energy of bombarding ions is judged on the presence of a crystalline phase to an amorphous or amalfitano surface of a crystalline material, including film subnanometer thickness, and the ratio of the specified peak without loss of energy to the peak or peaks of pair collisions determine the surface concentration of the crystalline phase to the amorphous or amalfitano surface.

Figure 1 presents a diagram of the device for implementing the method.

Figure 2 shows the energy spectra of ions Ne+(E0=28.8 eV), scattered by the surface of the InAs(l00)crystal surface; b) the surface after amorphization ion Ne, at the dose of ions D=1017ion·cm-2E0=2 Kev.

The analyzed object (the object) is a material, on which surface contains areas with crystalline and amorphous structures subnanometer thickness defined units monoatomic layers.

The device for implementing the method for determining the structural - phase States and transitions of the surface contains a vacuum measuring chamber 1 with an analytical device and measuring system 7. In the vacuum chamber are vacuum manipulator with holder 2 for the analyzed object 3, ion cannon 4 wipe thermal energy ion beam (E 0=2-100 eV), the energy analyzer 5 in the specified energy range, the ion gun 6 low energy E=0.1-10 Kev for the modification of the structural state of the surface. The measuring system 7 includes a pulse amplifier 8 and the recording device 9 and allows to measure the currents at the output of the collector is in the range of 10-12-10-19A (1-107imp/s).

Ion cannon 4 is designed for the irradiation of the analyzed surface with an ion beam of hyperthermal energies with a given mass and energy. Energy analyzer 5 to the collector in the form of a secondary electron multiplier is intended to highlight the energy spectrum of the ion flux of hyperthermal energy scattered from the surface with different energies and angles. Ion cannon low energies 6 is used for amorphization of the surface (at high current density beam) and to improve the crystal structure (at low current densities of the beam). The measuring system 7 has a broadband pulse amplifier 8 connected to the collector of the analyzer, and the recording device 9 for amplifying and pulse count.

The measuring system 7 has a broadband pulse amplifier 8 connected to the collector of the analyzer, and the recording device 9 for amplifying and pulse count.

The principle of operation of the device is to analyze the structural condition of nanoscale layers. The ion gun 5 analyzed the surface of the object 4 is irradiated probing ion beam of hyperthermal energy E<100 eV. The part incident on the surface ions are scattered (reflected) from the atoms of the surface at different angles with different energies in the single binary elastic collisions with surface atoms without changing the internal state of the ion and atom surface. This collision of the ion with atom due to the comparability of their masses change their kinetic energies. When the scattering at a particular angle of the incident ion in the collision transfers energy to the atom. The amount of transmitted energy is greater, the lighter the atom surface. By measuring the energy scattered at a certain angle of ions and knowing the mass and the initial ion energy and the scattering angle from the original direction, you can use the formulas of pair collisions of balls to determine the mass of the surface atoms, which are scattered ions.

In this paper, for the first time found that with the bombardment of the surface ions hyperthermal energies portion of the ions reflected from the surface without energy loss and no loss of charge. This group of ions creates a peak in the spectrum at an energy equal to the energy of the primary ions. For the first time established that this peak is present in the spectrum for crystalline materials and is not observed is expressed as in amorphous materials, and crystalline materials with amalfitano surface. The magnitude of the peak without energy losses, pointing to the crystal surface, relative to the maximum of the pairwise scattering increases with decreasing energy of the primary ions. The peak without energy loss to the magnitude of the peak pair scattering at a constant energy of the primary ions increases with the increase of the crystalline phase.

Figure 2 shows the spectra of scattered ions hyperthermal ion-surface crystalline indium arsenide InAs(l00) (a) and the surface of the crystalline InAs, amalfitano ion beam (b) with an energy of 2 Kev. It is known that the thickness amalfitano layer at such energies amorphization is not more than 100 Å. No peak no loss of energy in the spectrum (b) hypermiling energies indicates that the surface Amalfitana, and the crystalline phase is missing. Amorphization of the surface by ion beam with energy of 2 Kev indicates that the thickness amalfitano layer does not exceed tens of angstroms. The presence of a peak without loss of energy in the spectrum of the scattered ions and its dependence of the lattice structure first established authors.

Comparative analysis of the prototype showed that the depth of the analyzed layer of the proposed method is limited by the limit of nanoscale thickness (100 Å). Review of the composition, conducted using a paired ion collisions with surface atoms, the thickness is 1 atomic layer. In comparison with the prototype, the thickness of the analyzed layer less than not less than 10 times, if we take the lower limit of the thickness analysis 0.1 μm.

The way to determine the crystalline phase in the amorphous films of nanoscale thickness, consisting in the bombardment of the surface by the ion beam and the reception intensity of the reflected ions, characterized in that the analyzed surface is bombarded with ions of inert gas with energy less than 100 eV and record the energy spectrum of the reflected ions in the energy range, more energy primary ions, then the energies of the peaks of the pairwise collision in a received spectrum determine the types of atoms in one the top monolayer of atoms, in the presence of a peak with energy equal to the energy of bombarding ions is judged on the presence of a crystalline phase to an amorphous or amalfitano surface, including the nanoscale film thickness, and as the ratio of the specified peak without loss of energy to the peak or peaks of pair collisions determine the surface concentration of the crystalline phase to the amorphous or amalfitano surface.



 

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