Liquid crystal display device. RU patent 2504811.

FIELD: physics.

SUBSTANCE: liquid crystal display device includes a sealing element region on a first substrate and a second substrate on which electrode areas are formed, said areas being electrically connected to each other by electroconductive material contained in the sealing element. The first substrate and/or second substrate have a control structure section formed on them, which is situated at least between an electrode area and a pixel region and controls flow of material of a lining film until hardening thereof such that at least a portion of the electrode area remains uncovered by said film.

EFFECT: narrow frame region.

10 cl, 10 dwg

THE TECHNICAL FIELD TO WHICH THE INVENTION RELATES

The present invention relates to the liquid crystal display devices and, in particular, to the management of the use of a leveling of the film.

THE LEVEL OF TECHNOLOGY

Generally speaking, liquid crystal display device includes liquid crystal layer, hermetically enclosed between a pair of substrates. One of the paired substrates is substrate thin film transistor (TFT), which includes many shutter lines, many lines, many of pixel electrode, many TFT etc. Another substrate is an opposite substrate that contains the shared electrode, corresponding to set of pixel electrode. Liquid crystal layer is sealed by the sealing element in the form of the frame surrounding the liquid crystal layer between the substrate TFT and the opposite substrate.

Each of the TFT substrate and the opposite substrate include levelling film formed on the surface facing the LCD layer, for attitude control contained in the liquid crystal layer of liquid crystal molecules. This leveling film is made of a polymeric film, such as polyimide film, and a grinding or performed on its surface. Leveling film formed applying liquid polyimide on the surface of the TFT substrate and the opposite substrate and heating the liquid polyimide before its hardening. Polyimide may be caused , inkjet printing, etc.

During the formation of levelling film inkjet printing material viscosity of levelling of the film, such as polyimide, may be relatively low, such that the droplets of the material levelling film, thrown in the direction of the substrate and falling on the surface, could quite evenly distributed on the surface of the substrate. However, the material levelling films with low viscosity can evenly distributed on the surface of the substrate, the material levelling film may unnecessarily spread in an area destined for the formation of the sealing element.

Patent documents 1 and 2 offer a technique to prevent the excessive propagation material of levelling film by means of formation of a groove in the TFT substrate between the formation of the sealing element and the pixel region that participates in the display, so that the groove may hold material levelling film.

THE LIST OF CITED DOCUMENTS

Patent documentation

[Patent document 1] Japanese Patent publication № 2004-361623

[Patent document 2] Japanese Patent publication № 2007-322627

THE ESSENCE OF THE INVENTION

Technical task

When forming a groove for deduction of a material levelling film, as described in patent documents 1 and 2, it is necessary that groove was a relatively wide to ensure the capacity that is needed to keep the material levelling film. As a result of the distance between the pixel areas and scope of the sealing element increases, and therefore created around the pixel area of the zone does not display in the form of the frame cannot easily be narrowed.

According to another known technology in the field of sealing element formed many electrode sites, and these electrode plots by electrically charged particles, distributed and mixed in a sealant tapes element, connected with the General electrode on the opposite substrate.

Further, in accordance with the solved by the present invention technical problem with the links to the enlarged view of the figures 9 and the increased cross-sectional view in figure 10 will describe the design of the sealing element of the LCD display device, made by the technology.

Liquid crystal device 100 display, as shown in figure 10, includes facing each other substrate 101 TFT and opposite substrate 102. In the field of sealing element for education on a substrate 101 TFT sealing element formed the first electrode 103 and covering the first electrode interlayer insulating film 104. In insulating interlayer film 104 formed hole 105, which passes through insulating film 104 for the achievement of the first electrode 103. Hole 105, if you look in the direction perpendicular to the substrate, as shown in figure 9, is rectangular.

On the substrate 101 TFT formed the second electrode 106, which directly covers the surface of the insulating interlayer film 104, the inner surface of the wall of the hole 105 and outdoor into the hole 105 first electrode 103. Thus, the second electrode 106 electrically connected with the first electrode 103. The second electrode 106, may be made of transparent conductive film, such as oxide indium and tin (ITO). Unlike the TFT substrate on patent documents 1 and 2, the substrate 101 TFT groove has not.

Leveling film 107 applied on insulating film 104 in such a way that closes the second electrode 106. Leveling film 107 established distribution with low viscosity of the material levelling film from pixel region (not shown) in the direction of up to 9, so that it covers the second electrode 106 and encircled the hole 105.

The common electrode 108, made of ITO etc., formed on the surface of the opposite substrate 102 facing the substrate 101 TFT. Part of the total electrode 108 turned to the second electrode 106. Between the opposite substrate 102 and substrate 101 TFT provided with sealing element 110, which distributed a lot of electrically charged particles 109. These electrically conductive particles 109 are conductive to a common electrode 108.

However, since leveling film 107, which is an insulating film, continues into the sealing element to cover the second electrode 106, leveling film 107, which is between the second electrode 106 and conductive particles 109, may prevent conductivity between the second electrode 106 and General electrode 108 through the conductive particles 109.

Based on the foregoing, was made by the present invention. The present invention relates to a narrowing of the field don't see the image LCD display device as much as possible while ensuring the electrical connection between a pair of substrates.

SOLUTION OF THE TASK

Having in mind the above task, the present invention is directed to the creation of a liquid-crystal display devices, including the first substrate, the second substrate, addressed to the first substrate, the liquid crystal layer provided between the substrate and the second substrate, and sealing element provided between the substrate and the second substrate so that surround and seals the liquid crystal layer.

Each of the first of the substrate and the second substrate include pixel region as the display area, the area of the framework as an the field don't see that surrounds the pixel region and include the area of the sealing element for the formation of the sealing element, leveling films, each of which, proceeding from the pixel region to region of the sealing element is formed, respectively, on the surface of the first substrate facing the liquid crystal layer and the substrate surface of the second facing the liquid crystal layer, by means of curing has a turnover of material levelling film, the electrode areas formed in the areas of sealing element the first of the substrate and the second substrate, respectively, so that the electrode plots by conducting material electrically connected one with another, and the management structure has been formed at least between the cell site and the pixel region in at least one of the first of the substrate and the second substrate for current control material levelling the film to its curing so that at least part of the electrode plot remained uncovered this levelling film.

Positive effects

Below are caused by this invention positive effects.

In the manufacture of liquid crystal display device leveling film prior to its curing is distributed from the pixel region to region sealing element. Current material levelling film, which reaches the sealing element, controlled by a control structure, and at least part of the electrode plot of levelling film is not covered and remains open. Thus, part of the electrode plot and electrically conductive material are electrically connected, because the levelling layer between them.

Even if between the pixel region and scope of the sealing element is not formed groove for deduction of a material levelling film, electrode plot on the first level and the electrode plot of land on second substrate can be electrically connected together by a conducting material. Thus, the area of the frame can be made much already, and can be provided from the electrical connection between the first and second substrates.

ADVANTAGES OF THE INVENTION

In accordance with the present invention, the electrode plot on the first level and the electrode plot of land on second substrate can be electrically connected through a conducting material, even if the pixel region and scope of the sealing element groove for deduction of a material levelling of the film is missing. Thus, the area of the frame can be significantly reduced, and between the first and second substrates can be ensured for the electrical connection.

BRIEF DESCRIPTION OF DRAWINGS

Figure 1 represents a plan view, which shows the schematic structure of the TFT substrate of the first variant of implementation.

Figure 2 is a magnified view of the plan showing the area of the platforms on the TFT substrate of the first variant of implementation.

Figure 4 is a magnified view of the cross-section showing the structure of the cross-section of the LCD display device first option implementation.

Figure 5 is a magnified view of the plan showing the area of the opposite substrate TFT second variant of implementation of the request to the site.

Figure 6 is a magnified view of the cross-section showing the structure of the cross-section of the LCD display device second option implementation.

Fig.7 represents a plan view, the corresponding figure 2, showing the area of the platforms on the TFT substrate other option implementation.

Fig.8 is a view in the plan, the corresponding figure 2, showing the area of the site TFT substrate of another version of the implementation.

Figure 9 is a magnified view of the plan showing the area of the sealing element of the LCD display device, formed on appropriate technology.

Figure 10 is a magnified view of the cross-section showing the area of the sealing element of the LCD display device, formed on appropriate technology.

DESCRIPTION OF OPTIONS FOR THE IMPLEMENTATION

Are described in detail below embodiments of the present invention. This invention is not limited to the following variants of implementation.

[The first variant of realization of the invention]

Figure 1-4 show the first variant of the implementation of the present invention.

Figure 1 represents a plan view, which shows the schematic structure of the substrate 11 TFT first option implementation. Figure 2 is a magnified view of the plan showing the area of the platforms of 20 on a substrate 11 TFT first option implementation. Figure 3 represents a plan view, showing the material 24 levelling film, the current in the direction of the site 20 substrate 11 TFT first option implementation. Figure 4 is a magnified view of the cross-section showing the structure of the cross-section of the LCD display device 1 of the first variant of implementation.

As shown in figures 1 and 4, liquid crystal display device 1 includes substrate 11 TFT as the first of the substrate, addressed to the substrate 11 TFT opposite substrate 12 as the second substrate and liquid crystal layer 13, secured between the substrate 11 TFT and the opposite substrate 12.

Liquid crystal device 1 display also includes sealing element 14, secured between the substrate 11 TFT and the opposite substrate 12 to surround and sealing liquid crystal layer 13. Sealing element 14, as shown in figure 1 has essentially the form of a rectangular frame made of polymer with UV/thermal curing, such as resin epoxy, which as a conducting material distributed and mixed many of conductive particles 29 and glass fibers 30. External diameter of electrically charged particles 29 has a value of about 5 microns, and the diameter glass fibers 30 - about 4 microns. The width of the sealing element 14 length equal to, for example, about 0.5 mm

Figure 2 and 3 shows only one conductive particle 29, and other electrically conductive agents to simplify the description is not shown.

Each of the substrate 11 TFT and the opposite substrate 12 pixel region 31 as image display area and the area of 32 frames as a region don't see the image, the pixel region 31. Area of 32 frames include the 34 sealing element (region for the formation of the sealing element 14), secured by a predefined distance from the pixel region has 31.

Leveling film 23, each of which lasts from the pixel region 31 to the field of sealing element 14, formed on the surface of the substrate 11 TFT facing the liquid crystal layer 13, and the surface of the opposite substrate 12 facing the liquid crystal layer 13, respectively, curing has a turnover of material 24 levelling film.

This leveling film 23 is made of a polymeric film, such as polyimide, and manages the initial orientation of the liquid crystal molecules in the liquid crystal layer 13. Material 24 levelling film has a low viscosity is the result of adding the solvent in the polyimide etc. Material 24 levelling of the film can be, for example, the material of the film vertical-align having a viscosity of 6.5 MPa·s production JSR Corporation.

(The opposite substrate).

The opposite substrate 12, as shown in figure 4, is as the supporting substrate glass substrate 22. On the surface of the glass substrate 22 facing the substrate 11 TFT, formed the common electrode 26 of the portion of the electrode, which is made of transparent conductive film, such as ITO film, and has a thickness of about 100 nm. The common electrode 26 has a thickness of about 100 nm.

(Matte TFT)

The pixel region 31 substrate 11 TFT matrix has many pixels (not shown). At each pixel formed pixel electrode (not shown), consisting of the transparent conducting material, such as ITO film. In each of these pixels as element, connected to the pixel electrode, formed thin-film transistor (not shown). On the substrate 11 TFT formed shutter line (not shown) and line (not shown)connected to the thin-film transistors.

Substrate 11 TFT has the supporting substrate glass substrate 21, as shown in figure 4. On the surface of the glass substrate 21, facing the opposite substrate 12, formed many gate valves and lines the lower electrode 40. These lower electrodes 40 in the field of 34 sealing element with predetermined intervals and are made of the same material that and gate line. More specifically, the lower electrode 40 is made of titanium films with thickness of 100 nm, on top of titanium shield superimposed aluminum foil thickness is 300 nm and a layer of aluminum foil applied titanium film thickness of 50 nm.

As shown in figure 1, in the area of 32 frames on the glass substrate 21 formed many tracks 17 conclusions made from the same material that and gate line. Some of the tracks 17 conclusions are connected with the bottom electrodes 40. The width of the track 17 conclusions is about 10 microns.

On the surface of the glass substrate 21 formed film 41 isolation valves, which, as shown in figure 4, closes the shutter line and bottom electrodes 40. Film 41 isolation gates constituted of oxide film, such as film and silicon dioxide SiO2 , and has a thickness of about 0.4 microns.

As a protective film on the surface of the film 41 isolation gates formed film 42. film 42 formed from inorganic films, such as film SiN, and has a thickness of about 0.25 microns.

On the surface film 42 formed insulating interlayer film 43, which closes the bottom electrodes 40 etc. Interlayer insulating film 43 established, for example, of acrylic polymer and has a thickness of about 2.5 microns.

As electrode sites on the surface of the insulating interlayer film 43 in the field of 34 sealing element on a substrate 11 TFT established set of platforms 20, made of transparent conductive film, such as ITO film. These platforms of 20 have a thickness of about 100 nm, as shown in figure 1, distributed item 14 with predetermined intervals. Platform 20 through electrically charged particles 29 sealant tapes in item 14 are electrically connected with the General electrode 26 on the opposite substrate 12. Platform 20 are converted, respectively, to bottom electrodes 40.

In insulating interlayer film 43, film 42 and film 41 isolation gates formed hole 44 in the form of cracks, which opens the lower electrode 40. Thus, each of the 20 sites formed on the surface of the insulating interlayer film 43 and on the inside of the hole 44.

More specifically, in the hole 44 in-depth part of the site 20 forms an in-depth groove 45. Thus, each of the 20 sites electrically connected to the lower electrode 40, urging the site 20 through the hole 44.

Thus, in the substrate 11 TFT of the first variant of the implementation formed a control structure 60, consisting of in-depth groove 45. The management structure of the 60 formed at least platform between 20 and pixel area 31 and manages the current material 24 levelling the film to its curing so that at least part of the site 20 remains closed levelling film 23. The management structure 60 of the present variant of the implementation formed a rectangular with annular shape groove depth 45, which covers at least part of the site 20. Thus, part of the site 20, surrounded by a rectangular with annular shape groove depth 45, remains open levelling film 23.

In-depth groove 45 has a sloping part 46, forming the inner surface of the walls of the groove depth 45, as part of an inclined part 46 covered levelling film 23. More specifically, hatchback 46 part is convex circular surface, forming the outer edge of the groove depth of 45, and holds a leveling film 23. Leveling film 23 is not formed inside the in-depth groove 45, and the bottom surface of the depth of the groove 45 not closed levelling film 23.

As shown in figure 3, Playground 20 has short side about 500 microns, as long side about 3140 microns. Linear width of the groove depth 45 approximately 50 microns, and the distance between the outer edge of the in-depth groove 45 and the outside edge of the site is approximately 20 20 microns. Thus, part of the site 20 in-depth inside a groove 45, having the short side of approximately 360 microns and the long side of the approximately 3000 mkm, remains closed levelling film 23.

The following is a method of manufacturing liquid crystal display device 1.

Liquid crystal device 1 display manufactured by formation on the substrate 11 TFT or on the opposite substrate 12-shaped frame sealing element 14, pouring the liquid crystal inside the sealing element 14 and binding of the substrate 11 TFT and the opposite substrate 12.

In the manufacture of substrate 11 TFT bottom electrodes 40 are formed simultaneously with the lines (not shown) on the surface of the glass substrate 21, which is a transparent substrate. Then formed film 41 isolation valves, silicon film (layer i and phase n+; not shown), line (not shown) and film 42, which cover the bottom electrodes and gate line. After that, close to thin-film transistors, formed insulating interlayer film 43.

This interlayer insulating film 43 can be formed of the photosensitive organic matter such as acrylic polymer, or it could be a insulating tape. When used photosensitive organic material, this organic material is deposited on a glass substrate 21 for education flat surface by means of technology of centrifugal cover (you can use the technique of "gap" coverage or coverage way inkjet printing).

Then the technique of photolithography and etching is formed slit hole 44, passing through insulating film 43, film 42 and film 41 isolation valves. In the hole 44 open lower electrode 40.

When education insulating interlayer film 43 is used insulating film on a glass substrate 21, for example, spraying (can be used or application of appropriate material) is formed a layer of insulating material of uniform thickness, and the entire surface layer of insulating material is applied photoresist. Next technique of photolithography form a predefined picture of the photoresist. This is followed by etching material insulation layer ("wet" or "dry etching), and figure is removed, resulting in a hole 44.

Then on the surface of the insulating interlayer film 43 ITO layer is formed, which is subjected to the processes of photolithography and etching for simultaneous formation of many sites 20 and pixel electrode (not shown). Thus, inside the opening 44 through much of the site 20 formed in-depth groove 45 as control structures 60.

Thereafter, by inkjet printing is applied has a turnover of material 24 levelling of the film, such as polyimide, close to many sites 20 and pixel electrode. As shown in figure 3, the material 24 levelling film flows from the pixel region 31 to the field of 32 frame. When the material 24 levelling film reaches an inclined part 46 in-depth groove 45, edge is 24 levelling film is held sloping part 46.

As a result of material 24 levelling film, as shown in figure 4, hanging on the opposite substrate 12 about an inclined part 46 in-depth groove 45, thereby stopping the current material levelling film. Thus current material 24 levelling film managed by in-depth groove 45 and bypasses area, surrounded by profound groove 45. Then the material is 24 levelling film subjected to annealing, and formed leveling film 23. Thus, the substrate 11 TFT made.

The advantages of the first variant of the implementation of the

Under the first option, the implementation of the platform between 20 and pixel area of 31 formed an in-depth groove 45 as control structures 60. Thus, current material 24 levelling film from the pixel region 31 to 34 of the sealing element can be managed in-depth groove 45, as part of the 20 sites are not covered and can not be closed levelling film 23. Thus, the sealant tapes item 14 part of the site 20 can be directly connected with the conductive particles 29 without-located between the levelling film 23.

Thus, in accordance with the first alternative implementation, Playground 20 on a substrate 11 TFT and the common electrode 26 on the opposite substrate 12 can be electrically connected by means of electrically charged particles 29, even if the pixel area 31 and region 34 of the sealing element is not formed groove to hold the material 24 levelling film. Thus, the area of 32 frame can be significantly reduced, and ensured the electrical connection between the substrate 11 TFT and the opposite substrate 12.

Because an in-depth groove 45 surrounding at least part of the site 20, formed as a managing structure of 60, surrounded by a part of the site 20 guaranteed may not be closed levelling film 23.

Additionally, because the operating structure 60 also serves as a connecting element between the site 20 and lower electrode 40, there is no need to increase the area image only with the purpose of creation of this management structure 60. Consequently, the region is 32 frames can be narrowed even more.

[The second variant of the invention, the]

Figure 5 and 6 show the second variant of the implementation of the present invention.

Figure 5 is a magnified view of the plan showing the area of the opposite substrate 12 TFT second variant of implementation of the request to the site 20. Figure 6 is a magnified view of the cross-section showing the structure of the cross-section of the LCD display device 1 second option implementation. In the following description, the same ingredients as those shown in figures 1-4, in order to avoid their detailed description will be marked by the same positional notation.

In the first variant of the implementation of the management structure 60 formed on the substrate 11 TFT. In the second variant of the implementation of the management structure 60 formed on the substrate 11 TFT, and the opposite substrate 12.

(Matte TFT)

Substrate 11 TFT has the same structure, and the same element of the first variant of implementation. The width of the groove depth 45 approximately 50 microns, so that, as shown in Fig.6, the glass fibre 30 can be in-depth groove 45 sealant tapes in item 14.

(The opposite substrate).

The opposite substrate 12, as shown in figure 4, is as the supporting substrate glass substrate 22. The common electrode 26, of transparent conductive film, such as ITO film having a thickness of approximately 100 nm formed on the surface of the glass substrate 22 facing the substrate 11 TFT. Many layers of color (not shown), forming a color filter (not shown), and black matrix (not shown), which serves as a lightproof film formed on the surface of the glass substrate 22, as well as the common electrode 26 formed on the surface of the color filter.

Color layers are filters, each of which skips the R (red), G (green) or blue (B) light, and the pixel region 31 opposite substrate 12 are located in a form of a matrix structure. Black matrix blocks the transmission of light through the region between adjacent colored layers and blocks the transmission of light through an area of 32 frame. Sealing element 14 - the same that is formed on the substrate 11 TFT, and is located in a 34 sealing region item 32 of the frame.

The surface of the opposite substrate 12 facing the liquid crystal layer 13 curing the material of 24 levelling film, that applied to the substrate 11 TFT, formed leveling film 23, continuing from the pixel region 31 to 34 of the sealing element.

On the surface of the glass substrate 22 as control structures 60 formed plot 36, which acts to the substrate 11 TFT and continues in the form of an edge. As shown in figure 2, 5 and 6, plot is located 36 in-depth inside a groove 45, if you look in the direction perpendicular to the surface of the substrate 11 TFT or the opposite substrate 12. More specifically, plot 36 is made in the form of a rectangular ring, covering part of the overall electrode 26, as shown in figure 5. Thus, part of a common electrode 26, surrounded by a rectangular ring plot 36, remains closed levelling film 23.

plot 36 includes base 37, made, for example, of the same material, and blue color layer and cover 38, which covers the base of 37. Covering 38 is made of photosensitive acrylic polymer, which is the same material as the edge (not shown) or (not shown), formed on the opposite substrate 12 for the alignment of the liquid crystal molecules in a vertical orientation.

plot 36 includes slope of 39, the components of the external surface of the wall of the ridge plot 36, as part of an inclined part 39 covered levelling film 23. plot 36, as seen in cross section 6, essentially narrows in the opposite direction from the substrate 12 to the substrate 11 TFT. External (left figure 6) parts of the inclined 39 ring-shaped ridge plot 36 covered levelling film 23, while the interior (right figure 6) parts of the inclined 39 not covered levelling film 23. In particular, internal slanted part 39 holds the edge of levelling film 23.

As shown in Fig.6, the base of 37 has a thickness of about 2.5 microns, width approximately 30 microns. Covering 38 grounds 37 has a thickness of approximately 4 microns, width approximately 30 microns.

On the surface of the General electrode 26 in area of 34 sealing element is formed the sealing element 14, which closes plot 36. Thus, the conductive particles 29 sealant tapes in element 14, concluded between the General electrode 26 not covered by levelling film 23 and a 20 on the substrate 11 TFT, thus electrically connecting pad 20 and the common electrode 26.

A method of manufacturing

Substrate 11 TFT made the same way as in the first variant of implementation. In the manufacture of the opposite substrate 12 on the surface of the glass substrate 22, which is a transparent substrate, formed a color filter (not shown). During the formation of layers of color (not shown) color filter on the surface of the glass substrate 22 in area of 34 sealing element simultaneously from the same material as the color layers formed the Foundation of 37.

Then formed the common electrode 26 to close the base 37, and color filter, and the total surface of the electrode 26 is applied, for example, photosensitive acrylic polymer. After that, the technique of photolithography formed simultaneously covering 38, closing the base of 37, and (not shown) or edge for alignment of liquid crystals in a vertical orientation.

Thereafter, by inkjet printing is applied has a turnover of material 24 levelling of the film, such as polyimide, which closes the color filter etc.

Material 24 levelling film flows from the pixel region 31 to the field of 32 frame. When the material 24 levelling film reaches ridge plot 36, edge is 24 levelling film is kept internal sloping part of the 39 ridge plot 36. As a result of material 24 levelling film, as shown in Fig.6, hanging on the bed section 36 in the direction of the substrate 11 TFT, thereby stopping the current material levelling film. Then the material is 24 levelling film subjected to annealing, and formed leveling film 23. Thus, the opposite substrate 12 made.

Advantages of the second option implementation

Under the second option, the implementation of the present invention to the substrate 11 TFT formed an in-depth groove 45 as control structures 60 to prevent the closing of the site 20 levelling film 23. Thus, can be received the same benefits as the advantage of the first option implementation. In addition, on the opposite substrate 12 as control structures 60 formed plot 36 to part of the total electrode 26, facing the platform 20, remained open. Thus, the common electrode 26 and conductive particles 29 guaranteed to contact each other, thus reliably connecting electrically opposite substrate 12 and substrate 11 TFT.

Because the management structure 60 others formed part of the General electrode 26 plot 36 annular shape, part of a common electrode 26 can be guaranteed not closed levelling film 23.

plot is located 36 in-depth inside a groove 45 on the substrate 11 TFT, if you look in the direction perpendicular to the surface of the substrate. Thus can be guaranteed to be prevented current material 24 levelling film on the substrate 11 TFT towards the inside of the groove depth of 45. In addition, even when the sealing element 14 contains glass fibre 30, glass fiber 30 can be contained within the depth of the groove 45, as shown in figure 6. This can reduce the possibility that the cell thickness (thickness of the liquid crystal layer 13) will be uneven due to the fact that between the substrate 11 TFT and the opposite substrate 12 signed a glass fiber 30.

[Other options for implementation]

In the first and second options for implementing an in-depth groove 45 and plot 36 as control structures 60 are in the form of continuous ring. However, the present invention is not limited to this form, and the management structure 60 (in-depth groove 45 and plot 36) can be made in a U-shaped when viewed in the direction perpendicular to the surface of the substrate 11 TFT or the opposite substrate 12, as shown in Fig.7, the corresponding figure 2, branches continue in the direction opposite to the pixel region 31 (that is, figure 7 - up).

As shown in Fig.8, the corresponding figure 2, the operating structure 60 (in-depth groove 45 and plot 36) can be done in the form of a ring, which is divided into its parts, opposite the pixel region 31, when viewed in the direction perpendicular to the surface of the substrate 11 TFT or the opposite substrate 12. This configuration can also provide benefits, such benefits of the first variant of implementation.

In the above options for implementing an in-depth groove 45 or plot 36 in the form of a single ring formed as a management structure 60. However, this invention is not confined to this, and in-depth groove 45 or plot 36 can be formed as a double or triple rings, coaxial with each other.

The management structure of 60 may be formed on at least one of the substrate substrate 11 TFT or the opposite substrate 12. However, a good electrical connection between the substrate 11 TFT and the opposite substrate 12 managing structure 60 should preferably be provided in each of substrates 11 and 12.

In the first and second variants of implementation and the substrate 11 TFT, and the opposite substrate 12 electrically connected in sealant tapes item 14 by electrically charged particles 29. However, this invention is not restricted to this. For example, the substrate 11 TFT and the opposite substrate 12 can be electrically connected through an electrically conductive material, such as conductive paste.

INDUSTRIAL APPLICABILITY

As described earlier, the present invention is useful for use in liquid crystal display devices.

Description tagging

1 - liquid crystal display device

11 - substrate 11 TFT (first substrate).

12 - the opposite substrate (second substrate).

13 - liquid crystal layer

14 - sealing element

20 - Playground (electrode area)

23 - leveling film

24 - material levelling film

26 - the common electrode (electrode area)

29 - conductive particles (electrically conductive material)

31 - pixel area

32 - area frame

34 - scope of the sealing element

36 - plot

37 - base

38 - coating

39, 46 - sloping part of the

40 - bottom electrode

43 - insulating interlayer film

44 - hole

45 - deep groove (operating structure)

60 - the operating structure.

1. Liquid crystal display device containing the first substrate; - second substrate, addressed to the first substrate; liquid - crystal layer provided between the substrate and the second backing; and - sealing element provided between the substrate and the second substrate for environment and sealing liquid crystal layer; in which each of the first of the substrate and the second substrate includes the pixel region as the display area and scope of the framework as an area don't see that surrounds the pixel region, and include the sealing element intended for the formation of the sealing element, leveling of the film, each lasts from the pixel region to region sealing element, formed on the surface of the first substrate facing the liquid crystal layer and the substrate surface of the second facing the liquid crystal layer, respectively, through the curing has a turnover of material levelling film electrode areas, formed in the areas of the sealing element of the first of the substrate and the second substrate, respectively, so that the electrode plots by conducting material electrically connected one with another, and the operating structure, shaped, at least, between the cell site and the pixel region in at least one of the first of the substrate or the second substrate to manage current material levelling the film to its curing so that at least part of the electrode plot remained not covered by this levelling film.

2. Liquid crystal display device according to claim 1 in which the management structure is executed in the form of a ring, ambient, at least part of the electrode plot.

3. Liquid crystal display device according to claim 1 in which the management structure is in the form of U, if you look in the direction perpendicular to the substrate surface of the first or second substrate, and branches of the management structure continue in the direction opposite to the pixel region.

4. Liquid crystal display device according to claim 1 in which the management structure is executed in the form of a ring, which is divided in parts, opposite the pixel region, if you look in the direction perpendicular to the substrate surface of the first or second substrate.

5. Liquid crystal display device on any of the PP. 1 or 2, which is the first substrate provided bottom electrode, insulating interlayer film covering the lower electrode, and a slotted, passing through insulating film, to the bottom electrode - electrode section of the first substrate is formed on the surface of the insulating interlayer film and connected with the lower electrode through this hole, and in - depth groove, formed inside this hole in the first substrate, is a managing structure.

6. Liquid crystal display device according to claim 5, which in-depth groove includes an inclined part, component of the inner surface of the walls of the groove depth, and part of an inclined part of the in-depth groove covered levelling film.

7. Liquid crystal display device on any of the PP. 1 or 2, which plot, formed on second base for protrusion in the direction of the first substrate, is a managing structure.

8. Liquid crystal display device according to claim 5, which plot, formed on second base for protrusion in the direction of the first substrate, is a managing structure, and plot is located in the in-depth groove, if you look in the direction perpendicular to the substrate surface of the first or second substrate.