Design and technology to manufacture integral micromechanical relay with movable electrode as structure with piezoelectric layer |
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IPC classes for russian patent Design and technology to manufacture integral micromechanical relay with movable electrode as structure with piezoelectric layer (RU 2481675):
     
 Magnetoelectric transformer / 2476960
Magnetoelectric transformer represents a structure consisting of an inductance coil wound onto a magnetoelectric capacitor the dielectric whereof is volumetric ferrit, a piezoelectric composite material in the form of a core the geometric dimensions whereof correspond to the mechanical resonance condition. When AC voltage is supplied into the capacitor, mechanical deformations occur in the dielectric piezoelectric phase that are transmitted to the ferrit base where, as a result of magnetostriction, variable magnetisation appears inducing electromotive force in the inductance coil wound onto the sample. When the input electric voltage frequency coincides with that of the core mechanical resonance, forced oscillations amplitude is increased which results in a peak increase of output voltage amplitude. The dielectric used is volumetric ferrit, a piezoelectric composite material in the form of a core, with the inductance coil replaced with the capacitor armature in the output circuit.
 Thin-film detector for presence detection / 2475892
Proposed is a sensor (800) wherein the membrane (830) is formed over the front substrate (615); with a piezoelectric layer (820) over the membrane (830) within the active section (821), while the peripheral sections are positioned close to the active section (821). A structured electrically conductive layer including the first and the second electrodes (840, 845) is formed over the piezoelectric layer (820). Additionally envisaged is the structure of the rear substrate having holders (822, 824) positioned within the peripheral sections adjacent to the active one (821). The height (826) of the holders (822, 824) is in excess of the combined height (828) of the structured piezoelectric layer and the structured electrically conductive layer. Multiple sensors may be connected to form an array where a controller may be envisaged for control of the array, e.g., for control of the array beam as well as for processing signals received by the array to detect present and/or motion and/or e.g. to generate and image.
 Systems and methods for ultrasonic devices, including multiple antenna arrays of image converter / 2475891
Disclosed is an ultrasonic transducer (12, 42) for forming diagnostic images. Said ultrasonic transducer (12, 42) has a housing (24, 54), multiple antenna arrays (30, 32, 60, 62) of the ultrasonic transducer for obtaining data images, a transducer controller device (36, 66), a selection means (34, 64) for indicating to the transducer controller device (36, 66) the selected one of the multiple antenna arrays (30, 32, 60, 62) of the ultrasonic transducer for obtaining image data and a communication device (16, 70) for sending ultrasonic image data and for receiving data for transmission in wave form and/or control data. The ultrasonic transducer (12, 42) can also include a multiplexer (38) and/or a microbeam forming device (68). Antenna arrays (30, 32, 60, 62) of the ultrasonic transducer for obtaining image data may be of different types, may have different operational characteristics and/or different operating modes.
 Generator for piezoelectric converter / 2473154
Generator comprises two transformers (11A, 11B), every of which comprises a primary winding (L1) and a secondary winding (L2), and four switches (19A, 19B, 21 A, 21B), driven by a generator of supersonic frequency. Two (21 A, 21B) of four switches connect in turns the secondary winding of each transformer with a piezoelectric load (5). Two other switches (19A, 19B) connect in turns two primary windings with a source of supply (17). At the same time within the first half-cycle called a "positive half-cycle", the primary winding of one of the specified transformers is charged with energy, while the secondary winding of the other transformer releases power to a piezoelectric load. Within the second half-cycle called a "negative half-cycle" the secondary winding of one transformer releases power to a piezoelectric load, while the primary winding of the other transformer is charged with energy.
 Piezoelectric instrument and method for its manufacturing / 2472253
Instrument comprises piezoceramic plates, including sections of polarised and non-polarised ceramics. Polarised sections with electrodes applied on it form a bimorph. The non-polarised section is an element of cantilever fixation with leads providing for electric contact with electrodes of polarised sections and is arranged in the form of a frame surrounding polarised sections. Thickness of the non-polarised section (frame) may exceed thickness of polarised sections. The frame is made from alternating layers of piezoceramics and electrodes. Electrodes of even and odd layers are brought to the end of the frame and are electrically connected to each other into two groups forming a multilayer film capacitor. The method to manufacture an instrument includes formation of a foot from solid and non-solid layers of a "raw" piezoceramic film with metallisation between them, hydrostatic pressing. On stocks at three sides around future polarised sections, cuts are made. Further thermal treatment is carried out, as well as metallisation of stock surfaces and "end" electrodes, polarisation and measurement of instrument parameters.
Piezoelectric instrument and method for its manufacturing / 2472253
Instrument comprises piezoceramic plates, including sections of polarised and non-polarised ceramics. Polarised sections with electrodes applied on it form a bimorph. The non-polarised section is an element of cantilever fixation with leads providing for electric contact with electrodes of polarised sections and is arranged in the form of a frame surrounding polarised sections. Thickness of the non-polarised section (frame) may exceed thickness of polarised sections. The frame is made from alternating layers of piezoceramics and electrodes. Electrodes of even and odd layers are brought to the end of the frame and are electrically connected to each other into two groups forming a multilayer film capacitor. The method to manufacture an instrument includes formation of a foot from solid and non-solid layers of a "raw" piezoceramic film with metallisation between them, hydrostatic pressing. On stocks at three sides around future polarised sections, cuts are made. Further thermal treatment is carried out, as well as metallisation of stock surfaces and "end" electrodes, polarisation and measurement of instrument parameters.
Ceramic material, method of its manufacturing and electroceramic structural element containing electroceramic material / 2469988
Ceramic material has a composition in accordance with the following formulas: for y≤x/2: aPbO+(Pb1-3x/2+y□x/2-yNdx) ((Zr1-zTi1-yNiy)O3, for y>x/2: aPbO+(Pb1-xNdx) ((Zr1-x,Tiz)l.yNiy)O3-y+x/2♦y-x/2, where 0<a<1, 0<x<1, 0<y<1, 0<z<1, and a means surplus of PbO in the weighted amount, □ - Pb hole and ♦ - O hole. The method to manufacture the electroceramic multilayer structural element includes the following: manufacturing of a ceramic raw mix by grinding and mixing of initial materials, containing Pb, Zr, Ti, Nd and oxygen, calcinations of the specified raw mix, addition of the binder, formation of green films from the mix, laying of layers of ceramic green films into a stack, fixation of the stack by means of lamination, removal of the binder and sintering of green elements. Nickel may be introduced into the material structure prior to calcination of raw mix or may arrive from internal electrodes applied onto green films prior to their laying into a stack, in process of further processing.
 Inertial step motor / 2465712
Invention may be used, for instance, in a scanning probe microscope (SPM) for approach of a probe and a specimen, or for movement of samples in plants of electron, ion, probe or other effect. The inertial step motor comprises a base with the first piezomodule, connected with the piezomodule holder, a pusher, a guide, a movable carriage and a control unit. A clamp is mounted on a base. The piezomodule holder is "П"-shaped and is fixed on the clamp. The movable carriage is installed on guides on the base. The pusher is coupled with the movable carriage, fixed on the piezomodule holder and may be made either from a solid alloy, have a plate shape or as a cylinder or a ball. The piezomodule holder may be fixed on the clamp as capable of rotation around it. The clamp may contain a flat spring and be coupled with a controlled stop. The first piezomodule may have the first pad coupled with the first arm of the "П"-shaped holder, or the second pad, coupled with the second arm of the "П"-shaped holder. The movable carriage may be equipped with a polycor or a ceramic plate coupled with the pusher. The second piezomodule may be introduced between the first piezomodule and the piezomodule holder.
Inertial step motor / 2465712
Invention may be used, for instance, in a scanning probe microscope (SPM) for approach of a probe and a specimen, or for movement of samples in plants of electron, ion, probe or other effect. The inertial step motor comprises a base with the first piezomodule, connected with the piezomodule holder, a pusher, a guide, a movable carriage and a control unit. A clamp is mounted on a base. The piezomodule holder is "П"-shaped and is fixed on the clamp. The movable carriage is installed on guides on the base. The pusher is coupled with the movable carriage, fixed on the piezomodule holder and may be made either from a solid alloy, have a plate shape or as a cylinder or a ball. The piezomodule holder may be fixed on the clamp as capable of rotation around it. The clamp may contain a flat spring and be coupled with a controlled stop. The first piezomodule may have the first pad coupled with the first arm of the "П"-shaped holder, or the second pad, coupled with the second arm of the "П"-shaped holder. The movable carriage may be equipped with a polycor or a ceramic plate coupled with the pusher. The second piezomodule may be introduced between the first piezomodule and the piezomodule holder.
 Piezoelectric multilayer component / 2462792
Piezoelectric multilayer component has a stack (1) of piezoceramic layers (2) and electrode layers (3) arranged one above the other. At least one piezoceramic layer is printed with a layer (4) structured according to a predefined configuration in a piezoelectrically inactive zone of the stack. The structured layer has at least one connecting element (4a) by which piezoceramic layers which are adjacent in the stacking direction are mechanically connected to each other with a first strength. The structured layer has interspaces (4b) filled at least in part with piezoceramic material of the adjacent piezoceramic layers. The adjacent piezoceramic layers in the interspaces are mechanically connected to each other with a second strength, which is less than the first strength.
 Composite micromechanical component from silicon with metal and method of its production / 2474532
Invention relates to producing composite micromechanical component including deep ion-beam etching, electrotyping and forming. Proposed method comprises the following steps. Making substrate including top and bottom silicon layers with interlayer of silicon oxide arranged there between, selective etching of, at least, one cavity in top layer to confine component silicon part pattern, and further etching of said cavity in interlayer. Besides, proposed method comprises growing metallic layer from one section of said cavity to make metallic part in component cross-section to isolate silicon part of micromechanical component from destructive mechanism strains and separated said component from substrate.
 Mems devices with support structures and methods of their production / 2468988
Devices MEMS are produced as follows. Electrode layer is applied onto substrate.Temporary layer is applied on said electrode layer. Said temporary layer is perforated. Moving layer is applied on said temporary layer. Support structures are made above moving layer and, partially, in temporary layer perforation. Moving layer section extends between, at least, two support structures. Temporary layer is etched out to form cavity between moving layer and electrode layer.
 Interferometric optical display system having wide-band characteristics / 2452987
Display has light transmitting apparatus and apparatus for providing interference during reflection of light transmitted through the light transmitting apparatus. The apparatus for providing interference during light reflection has an absorbent material and a movable reflecting layer. The absorbent material lies on part of the light transmitting apparatus. The movable reflecting layer lies on the absorbent material. The absorption coefficient (k) of the absorbent material is lower than the threshold value for light wavelength values in the operating optical range of the apparatus for providing interference during light reflection. The refraction index (n) of the absorbent material increases with increase in the light wavelength in the operating optical range of the apparatus for providing interference during light reflection. The apparatus for providing interference during light reflection are adapted to reflect wide-band white light in the operating optical range.
 Thermal micromechanical actuator and method of making said actuator / 2448896
Invention relates to microsystem engineering and can be used in designing and manufacturing micromechanical devices, having elastic, flexible deformable actuating elements which enable electric signal-to-displacement conversion and/or temperature change-to-displacement conversion for microrobotic systems. The thermal micromechanical actuator comprises a silicon monocrystalline wafer with orientation [100], having a mesostructure consisting of parallel trapezoid inserts joined by polyimide interlayers formed by a polyimide film, a heater and a heater metal coating. According to the invention, the polyimide film is made from a polypyromeltitimide layer adjacent to the parallel trapezoid inserts, which is reinforced with carbon nanotubes with functional carboxylic groups and concentration of not more than 11×10-3 g/cm3 and a non-reinforced polypyromeltitimide outer layer.
 Measuring element of motion parameter sensor for high-sensitivity inertia measurements / 2444738
Measuring element of a motion parameter sensor based on molecule-electron transfer principle is in form of two or more non-conducting plates separated by a gap, having through-holes with electrodes deposited on one or both plates and placed in a working fluid. The electrodes lie in said gap and when flowing through the measuring element, the liquid successively passes through the through-holes in one plate, the gap with electrodes and the through-holes in the second plate.
 Optically addressed spatial light modulator and method / 2438152
Optical device has a first electrode layer. An electrically insulating first barrier layer is placed over the first electrode layer. A photoconductive layer is placed over the first barrier layer. A carrier confining layer is placed over the photoconductive layer, where said carrier confining layer defines a volume and has a plurality of carrier traps distributed over the entire said volume. An electrically insulating second barrier layer is placed over the carrier confining layer. A light blocking layer is placed over the second barrier layer for blocking light of a selected wavelength band. A reflective layer is placed over the light blocking layer for reflecting light within the selected wavelength band. A birefringent or dispersive layer is placed over the reflective layer. An optically transmitting second electrode layer is placed over the birefringent or dispersive layer.
 Method and circuit for operation of capacitance micro electromechanical transducer with analog recovery / 2431150
Proposed transducer incorporates at least one differential capacitor made up of two fixed electrodes and central moving electrode suspended there between to be displaced by external force to be measured. Method of operating capacitance transducer comprises applying equal opposite-direction excitation voltages between fixed electrodes and central electrode to measure central electrode displacement. Note here that charge part that may be tapped off central electrode and corresponds to electro static recovery force is called recovery noise.
 Scanning probe microscope having nanotome / 2427846
Scanning probe microscope with a nanotome has a basic element on which there is a die holder with a holder interfaced with a first drive, a sample holder with a sample interfaced with a second drive and a scanning unit which can be interfaced with the sample. The first drive has a single-coordinate (coordinate Y) which moves die towards the sample. The second drive has one coordinate (coordinate X) which moves the sample holder with the sample perpendicular to coordinate Y.
 Pressure sensor of increased sensitivity based on nano- and microelectromechanical system with thin-film resistance strain gauges / 2427810
Pressure sensor of increased sensitivity on the basis of nano- and microelectromechanical system with thin-film resistance strain gauges includes housing, nano- and microelectromechanical system (NMEMS) installed in it and consisting of elastic element - membrane with rigid centre, which is fixed along the outline in support base, heterogeneous structure formed on it of thin films of materials, in which contact platforms are formed. Also, sensor includes the first radial resistance strain gauges from identical resistance strain gauges which are located in one circumferential direction on periphery of membrane. As well, the second radial resistance strain gauges consisting of identical resistance strain gauges, which are located in other circumferential direction on membrane, which are connected by means of thin-film connecting films, which are connected to measuring bridge. At that, radius of rigid centre is determined from the following ratio: Rc=0.18Rm, where Rm - membrane radius. At that, resistance strain gauges of the second radial resistance strain gauges are located in circumferential direction the radius of which is determined from the following ratio:
 Micromechanical capacitance thermoelectric converter / 2426201
Converter comprises a dielectric or a semiconductor substrate 1, where there is a fixed electrode 2, coated with a ferroelectric film 3. On the ferroelectric film 3 there is the second fixed electrode 7, coated with a dielectric film 8. A heat conducting plate 5 is fixed on heat-insulating walls 4. One of ends of a movable electrode 6 is fixed to a plate 5, and the movable part of the movable electrode is installed in parallel to the dielectric film 8 surface with a gap between them. The substrate 1 and the heat-conducting plate 5 have different temperatures. As electric voltage is applied between the electrodes, the movable electrode 6 ensures a cyclic heat exchange between the heat-conducting plate 5 and the ferroelectric film 3 by means of its movement from the heat-conducting plate 5 to the dielectric film 3.
 Device for measuring sizes of needle tip for scanning microscope / 2308414
Device comprises base and nano-tubes mounted on the base. The diameter of the nano-tubes varies from 1 to 10 nm. The axes of the nano-tubes are parallel to the plane of the base.
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FIELD: electricity. SUBSTANCE: method to manufacture an integral micromechanical relay with a movable electrode in the form of a structure with a piezoelectric layer, comprising a substrate, coated with a dielectric layer with a lower (fixed) electrode and a movable electrode, consisting serially of a lower current-conductive layer, a dielectric layer with high elastic properties, a medium current-conductive layer, a piezoelectric layer, an upper current-conductive layer, arranged on the surface of the above substrate is realised on the surface of silicon plates. Development of an integral micromechanical relay with a movable electrode in the form of a structure with a piezoelectric layer is carried out in a single process cycle with simplified manufacturing technology compatible with technology of production of integrated circuits, in which formation of a movable electrode is possible in the form of a cantilever or in the form of a beam and includes the following operations: formation of a film Si3N4 on the surface of the silicon substrate by the method of SiN4 pyrolysis; sputtering of a TiN layer and formation of a "lower electrode" structure by the method of projection photolithography and plasma-chemical etching of the TiN layer; deposition of a layer of PSG (phosphate-silicate glass) by the method of chemical deposition from a gas phase and formation of a sacrificial layer on its basis by the method of liquid chemical etching; sputtering of the first TiN layer; deposition of the dielectric layer Si3N4; sputtering of the second TiN layer; deposition of the piezoelectric layer of lead zirconate titanate (LZT); sputtering of the third TiN layer; plasma-chemical etching of the layers: the third TiN layer, the LZT layer, the second TiN layer, the Si3N4 layer, the first TiN layer with formation of a movable multilayer electrode and opening of the sacrificial layer of PSG, liquid chemical etching of the sacrificial PSG layer with formation of an air gap between a fixed and a movable electrodes. EFFECT: increased reliability and extended service life of a micromechanical relay, using microelectronic technology for production of a micromechanical relay makes it possible to minimise device dimensions down to 20-80 mcm and to simplify technology of its production. 3 cl, 5 dwg
Description of the invention The technical field The invention relates to the field of electronic technology and can be used in the manufacture of devices microelectromechanical systems, in particular the integrated micromechanical relays and devices based on them: power switches, circuits, memory, sensors, information processing systems and other The level of technology Integrated micromechanical relay with a movable electrode in the form of a structure with a piezoelectric layer can be manufactured in the form of a beam, comprising a stationary electrode and movable electrode beams, mounted on poles on both sides, made in the form of a structure with a piezoelectric layer, or as a console consisting of a stationary electrode and movable electrode, console mounted on the support with one hand, made in the form of a structure with a piezoelectric layer. Relay console enables operation at lower operating voltage than the relay in the form of a beam with the same dimensions of the movable electrode. The effectiveness of the integrated micromechanical relay is determined by the inverse piezoelectric effect, causing rolling movement of the electrode, which in turn depends on the material of the movable electrode, the applied voltage and distance between the electrodes. That the same efficiency micromechanical relay is determined by the flexibility and durability of the movable electrode, which is used in the structure of the movable electrode dielectric layers with high elastic properties. Well-known piezoelectric properties of ferroelectrics, namely TSTS-19 (based on lead, lead zirconate, titanate). To ensure high mobility of the electrode must be made of a material with a pronounced inverse piezoelectric effect, which may provide films of ferroelectric, namely TSTS-19 (based on lead, lead zirconate, titanate). One way to obtain a device with a movable element of the device is shown in the patent of Russian Federation №2193804, which describes the design, method of manufacture and characteristics of semiconductor thermomechanical microactuator, which is intended for use in the construction of a wide class of micromanipulators, including micro relays, consisting of a base, made in the form of a frame, an electric heater and element of the silicon-containing material, suspended in the window frame using at least one movable plate can be moved in the plane perpendicular to the plane of the frame, as a result of thermal expansion of the movable plate under the influence of an electric heater. The disadvantages of this device are unreliable and low is korost operation. Another way of obtaining a piezoelectric relay is shown in patent No. RU2391736. Piezoceramic relay comprises a base, a fixed cantilever bimorph plate piezo with the contacts of the control circuit on the fixed end of the piezoelectric element and the contact of the switching circuit mounted on the free end of the piezoelectric element, interacting with the supply voltage on the contacts of the control circuit of the piezoelectric element to the other contact of the switching circuit. Moreover, the mentioned relay further comprises a mechanism for adjusting a gap between the mentioned electric contacts of the switching circuit, made in the form prescribed in the case of the cylindrical face of the Cam, with the possibility of rotation around the axis, and a spring-loaded lever, one end of which is fixed in the above-mentioned case of the clearance adjustment mechanism, and the second end of the lever is in kinematic connection with the said face Cam and contains the electrical contact of the switching circuit, interacting with others mentioned electric contact mounted on the movable end of the piezoelectric element. Working voltage of this device 18 In frequency 0-240 Hz. The disadvantages of the aforementioned devices are its large size (18×8×4 mm) and the complexity of Assembly of the device. The closest technical solution is receiving to the proposed invention is the patent US 5.093.600, CL 310/332. This invention claims the piezoelectric relays containing base (housing)mounted thereon cantilever plate bimorph piezoelectric element with the contacts of the control circuit on the fixed end and with an electric contact switching circuit mounted on the free end of the piezoelectric element, interacting with the supply voltage on the contacts of the control circuit of the piezoelectric element with the other electrical contact of the switching circuit installed in the base of the relay. The disadvantages of this relay are that for reliable operation and ensure the reproducibility of the parameters of the relay is required with high accuracy (one micron) to maintain the gap between the contacts of the switching circuit, which significantly complicates the manufacturing process and obtaining the parameters of the relay. The aim of the invention is to provide a method of manufacturing integrated micromechanical relay with a movable electrode on the basis of piezoelectric films, which, when simplified manufacturing techniques that are compatible with the technology of production of integrated circuits, would have high stability switches in continuous service resource. This goal is achieved by a method for manufacturing integrated micromechanical relay with a movable electrode in the form of the structure is s with the piezoelectric layer, consisting of a substrate covered by a dielectric layer from the bottom (stationary electrode and a movable electrode that consists of the lower conductive layer, a dielectric layer with high elastic properties, the middle conductive layer, the piezoelectric layer, the upper conductive layer located on the surface of the aforementioned substrate, is carried out on the surface of a silicon wafer, is integrated micromechanical relay with a movable electrode in the form of a structure with a piezoelectric layer in a single technological cycle in a simplified manufacturing techniques that are compatible with the technology of production of integrated circuits, in which the formation of the movable electrode may be in the form of the console or in the form of a beam and includes operations: forming on the surface of a silicon substrate film Si3N4by pyrolysis of SiH4; plating a layer of TiN and the formation of the structure of the "lower electrode" method of projection photolithography and chemical etching of the TiN layer; deposition of a layer FSS (phosphate-silicate glass) by the method of chemical deposition from the gas phase and the formation on the basis of the sacrificial layer by the method of liquid chemical etching; coating the first layer of TiN; the deposition of the dielectric layer Si3N4; napaloni the second layer of TiN; the deposition of the piezoelectric layer sjpc; coating a third layer of TiN; plasma etching of layer: the third layer is a TiN layer CTS, the second TiN layer, a layer of Si3N4the first TiN layer with the formation of the rolling multilayer electrode and the opening of the sacrificial layer FSS, liquid chemical etching of the sacrificial layer FSS with the formation of the air gap between the fixed and movable electrodes. This way you can create integrated micromechanical relay with a movable electrode in the form of a beam in the form of a console. Moreover, the formation of the rolling electrode in the form of a console is performed by means of additional plasma-chemical etching of the portion of the beam to obtain a movable electrode mounted on one pole. Micromechanical relay with a piezoelectric element manufactured by the above-mentioned technology has several advantages: micron dimensions, the relative simplicity of manufacture using standard operations used in the manufacture of integrated circuits, low power consumption, high performance, high reliability. In the proposed technology, the creation of integrated micromechanical relay with a movable electrode in the form of a structure with the piezoelectric layer is in a single technological cycle of production of the integral element is, forming on a substrate a dielectric layer; a conductive layer forming the fixed electrode; and a sacrificial layer, and then applying the above mentioned layers sequentially to form a movable electrode of the lower conductive layer; a dielectric layer with high elastic properties; middle conductive layer, ferroelectric layer, the upper conductive layer; removing the final stage of the sacrificial layer side potroom to form a movable electrode fixed on one side (console), or on both sides (beam). In this technological route decreases the variance of the distances between the movable and fixed electrodes. The use of piezoelectric layers and dielectric layers with a high coefficient of elasticity ensures stable operation of the micromechanical relay avoids electrostatic "sticky" movable electrode fixed. Literature 1. Vardan Century, Blame K., Jose K. RF MEMS and their application. M: Technosphere, 2004. 2. Technical paper "Microengineering Space Systems" for The First Canadian Workshop on MEMS Technology for Aerospace Applications". 2001 - P.49. 3. Majumder, S., N.E. McGruer, Adms G.G., P.M. Zavracky, R.H. Morrison, and J. Krim Study of contacts in an electrostatically actuated microswitch // Sen-sors and Actuators - 2001 - No. A93. - P.19-26. 4. Raspopov VIA Micromechanical devices. Tutorial - 'toole. th is. University. - Tula. 2002. 5. M.A.Michalicek. Introduction to micromechanical systems. URL: http://mems.colorado.edu. Disclosure of inventions Task to be solved by the present invention is directed, is to obtain a technical result, which consists in obtaining the integrated micromechanical relay with a movable electrode in the form of a structure with a piezoelectric layer, simplifying the technical process of its production and obtaining the parameters of the piezoelectric relay. Integrated micromechanical relay is a device consisting of fixed and movable electrode, which, in turn, consists of conductive layers, layers of ferroelectric, dielectric layers with high elastic properties, which can be used to switch micro relays inverse piezoelectric effect and to avoid "sticking" rolling electrode after the relay is activated. The problem is solved in the design of micromechanical relay with a movable electrode in the form of a structure with a piezoelectric layer comprising a substrate covered by a dielectric layer, and the lower conductive layer acting as a stationary electrode and a movable electrode that consists of: the lower conductive layer; a dielectric layer with high elastic properties; medium tocop Bogashevo layer, the piezoelectric layer, the upper conductive layer located on the surface of the aforementioned substrate and contact pads. Between the fixed electrode and the lower conductive layer movable electrode has a gap, providing an interrupt current when shutdown relay. Thus, the hallmark of the invention is that the formation of a micromechanical relay is a single technological cycle in microelectronic technology. In the process of forming on the surface of the substrate is a dielectric layer and the fixed electrode and the above-mentioned dielectric layer, in turn, is movable electrode that consists of the lower conductive layer, a dielectric layer with high elastic properties, the middle conductive layer, the piezoelectric layer, the upper conductive layer. Between the fixed electrode and a movable electrode, there is an air gap formed after GHT etching the sacrificial layer, providing an interrupt current when disabled relay. This set of distinctive features allows you to achieve the technical result consists in obtaining the integrated micromechanical relay with a movable electrode in the form of a structure with a piezoelectric layer made the CSOs in microelectronic technology, namely, in the creation in a single technological cycle stationary and movable electrodes by the method of sequential deposition of conductive, dielectric and piezoelectric layers on a silicon substrate using methods GHT etching, including IHT etching the sacrificial layer for the formation of the air gap between the fixed and movable electrodes. A brief description of the drawings. The invention is illustrated by the following drawings: Figure 1 formation of a dielectric layer on the substrate. Figure 2 Forming a fixed electrode on the dielectric layer. Figure 3 Application of the sacrificial layer. Figa the Formation of multi-layer movable electrode in the form of a beam. Figb the Formation of multi-layer movable electrode in the form of a console. Figa Liquid etching the sacrificial layer and forming a relay in the form of a beam. Figb Liquid etching the sacrificial layer and forming a relay in the console view. Designation of layers: 1 - substrate (Si); 2 - dielectric layer (Si3N4); 3 - lower electrode conductive layer (TiN); 4 - the first conductor layer movable electrode (TiN); 5 - dielectric layer with high elastic properties (Si3N4); 6 - the second conductor layer movable electrode (TiN); 7 - piezoelectric layer (sjpc); 8 - the third conductor layer concentration in the second electrode (TiN); 9 - the sacrificial layer (FSS). An example of carrying out the invention The technology for manufacture of integrated micromechanical relay with a movable electrode in the form of a structure with a piezoelectric layer on the surface of silicon wafers with a diameter of 100 mm, including the following operations to obtain a micro relays in the form of a beam: forming on the surface of a silicon substrate (1) film Si3N4(2) thickness of 0.25 μm by pyrolysis of SiH4; plating a layer of TiN with a thickness of 0.15 μm and structure formation "bottom electrode" (3) when conducting projection photolithography and chemical etching of the TiN layer; deposition of a layer FSS (phosphate-silicate glass) of a thickness of 0.5 μm by chemical vapor deposition from the gas phase and the formation on the basis of the sacrificial layer (9) by the method of liquid chemical etching; coating the first layer of TiN (4) thickness 0.25 μm; the deposition of a dielectric layer with high elastic properties of Si3N4(5) with a thickness of 0.7 μm; coating a second layer of TiN (6) thickness 0.25 μm; the deposition of the piezoelectric layer CTS (7) with a thickness of 0.7 μm; coating a third layer of TiN (8) thickness 0.25 μm; plasma etching of layer: the third layer is a TiN layer CTS, the second TiN layer, a layer of Si3N4the first TiN layer with the formation of the rolling multilayer electrode and the opening of the sacrificial layer is SS, liquid chemical etching of the sacrificial layer FSS with the formation of the air gap (11) between the fixed and movable electrodes; to obtain micro relays console produced plasma etching of part of the beam to obtain a movable electrode mounted on one pole. Obtained according to the described technology integrated micromechanical relays have a micron size of 20-80 microns, operating voltage U=10 V at a frequency 0-1000 Hz, provide high stability switches in continuous service resource. 1. A method of manufacturing integrated micromechanical relay with a movable electrode in the form of a structure with a piezoelectric layer consisting of a substrate covered by a dielectric layer from the bottom (stationary electrode and a movable electrode that consists of the lower conductive layer, a dielectric layer with high elastic properties, the middle conductive layer, the piezoelectric layer, the upper conductive layer located on the surface of the aforementioned substrate, is carried out on the surface of a silicon wafer, characterized in that the integrated micromechanical relay with a movable electrode in the form of a structure with a piezoelectric layer in a single technological cycle in a simplified manufacturing techniques, overestimat technology production of integrated circuits, in which the formation of the movable electrode may be in the form of the console or in the form of a beam, and includes the steps: forming on the surface of a silicon substrate film Si3N4by pyrolysis SiN4; plating a layer of TiN and the formation of the structure of the "lower electrode" method of projection photolithography and chemical etching of the TiN layer; deposition of a layer FSS (phosphate-silicate glass) by the method of chemical deposition from the gas phase and the formation on the basis of the sacrificial layer by the method of liquid chemical etching; coating the first layer of TiN; the deposition of the dielectric layer Si3N4; spraying a second layer of TiN; the deposition of the piezoelectric layer sjpc; coating a third layer of TiN; plasma etching of layer: the third layer is a TiN layer CTS, the second TiN layer, a layer of Si3N4the first TiN layer with the formation of the rolling multilayer electrode and the opening of the sacrificial layer FSS, liquid chemical etching of the sacrificial layer FSS with the formation of the air gap between the fixed and movable electrodes. 2. The method according to claim 1, wherein forming the movable electrode is in the form of a beam. 3. The method according to claim 2, in which the formation of the movable electrode is in the form of a console method additional plasma-chemical etching of the portion of the beam to obtain the concentration in the second electrode, mounted on the same support.
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