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Processing method of scraps of anodes of tantalum oxide-semiconductor capacitors

IPC classes for russian patent Processing method of scraps of anodes of tantalum oxide-semiconductor capacitors (RU 2480529):

C22B7 - Working-up raw materials other than ores, e.g. scrap, to produce non-ferrous metals or compounds thereof
C22B34/24 - Obtaining niobium or tantalum
C22B3/06 - in inorganic acid solutions
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FIELD: metallurgy.

SUBSTANCE: method involves cleaning of scraps by acid treatment with removal of manganese dioxide. Then, deoxidation of cleaned scraps, its hydration, grinding, dehydration at increased temperature is performed so that tantalum hydride powder is agglomerated and tantalum capacitor powder is obtained. At that, acid treatment is performed at room temperature using the solution containing 100-300 g/l of sulphuric acid and 110-300 g/l of hydrogen dioxide, or the solution containing 30-150 g/l of hydrochloric acid and 75-225 g/l of hydrogen dioxide. Scrap hydration is performed by treatment using the solution of hydrofluoric acid with concentration of 1-5%. The obtained capacitor tantalum powder provides specific charge of up to 7300 mcC/g, breakdown voltage of more than 200 V and leakage current of 0.0001-0.0003 mcA/mcC when being used in anodes of tantalum oxide-semiconductor capacitors.

EFFECT: reduction of energy intensity and improvement of environmental friendliness of the process at its simultaneous simplification.

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The invention relates to the field of processing of scrap anodes of tantalum oxide-semiconductor capacitors formed during the production of capacitors, or when disposing of used capacitors, with the production of standard capacitor tantalum powder.

Scrap tantalum oxide-semiconductor capacitors is a valuable source of raw materials for the production of tantalum capacitor powders. The anode tantalum capacitor is a volume-porous body of sintered tantalum capacitor powder and containing conductive tantalum wire. The pores of the anode is filled with manganese dioxide (MnO2on top of which is coated with carbon-containing layer to create an electrical contact with the copper layer. The content of MnO2in this anode is up to 20%. Technology of processing of scrap, providing for its dissolution with subsequent formation of compounds of tantalum and recovery, accompanied by a significant loss of tantalum at numerous stages of processing. The dissolution of high-purity metal anodes with all related impurities and subsequent processing similar to the processing of ore materials is inefficient. More advanced methods of processing of obtaining condenser powder without full Rast is orenia scrap.

A method of refining scrap anodes of tantalum capacitors (see U.S. Pat. 7981191 USA, IPC B22F 9/04 (2006.01), including the selection of scrap in the form of gray or molded anodes with low levels of contamination, rinsing to remove residual carbon, acid treatment 50% nitric or hydrochloric acid to remove contaminating metal impurities, hydrogenation at 482°C for 3 hours and grind for 30 minutes with the removal of tantalum wire. Then within 6 hours continue grinding until you get a powder with a particle size of 1.1 μm, carry out dehydration, sintering, deoxidation, acid treatment 50% concentrated nitric and hydrochloric acid to remove residual magnesium and sieving the obtained tantalum powder. As starting material can be used tantalum sheet, do not contain significant amounts of impurities. From the resulting powder by pressing and sintering is made the anode, which at 60 had the leakage current 0,0015 µa/µc.

The disadvantage of this method is that it is used for recycling scrap with a low level of contamination and may not be used for processing scrap anodes oxide-semiconductor capacitors. In this way the operation of the dehydrogenation and agglomeration of the powder is carried out separately, which increases the intensity is of the manual, the use of concentrated acids is undesirable factor from the point of view of ecology. In addition, the high leakage current ready anodes testifies to the low purity of the obtained powder.

Known also adopted as a prototype method for processing scrap anodes of tantalum oxide-semiconductor capacitors (see Orlov V.M., Sukhorukov CENTURIES, Matychenko AS Recycling scrap tantalum capacitors // non-ferrous metallurgy. 2005. No. 6. P.10-14), which involves removal of the manganese dioxide from the anode by acid treatment of scrap hot (80°C) hydrochloric acid with respect to W:T=2-3, deoxidation cleared scrap by heat treatment in the presence of magnesium powder at a temperature of 800-900°C, the removal of the formed magnesium oxide 10% solution of hydrochloric acid followed by washing with distilled water and drying. After deoxidation of the scrap is subjected to additional heat treatment in vacuum at a temperature of 1800°C for 3 hours to remove excess magnesium and iron. Next scrap hydronaut in the atmosphere of high purity hydrogen produced by the decomposition of titanium hydride, and ground in a rod mill to provide a bulk density of 4.2-4.5 g/cm3. The obtained powder of tantalum hydride is treated with 15% hydrochloric acid to remove iron, made while grinding, and everyroom with simultaneous agglomeration in the current high-purity argon at a temperature of 1400-1500°C with a holding time at the maximum temperature for 1 hour. The sinter is crushed to a particle size of less than 315 μm. The resulting powder was characterized by low content of impurities, and satisfies the requirements of technical conditions on the capacitor powders. Leakage current anodes made from this powder is is 0.0002-0,0003 µa/µc, the specific charge does not exceed 6460 µc/year

The disadvantages of this method include the leaching of manganese dioxide with concentrated hydrochloric acid at elevated temperature, which is accompanied by the release of toxic chlorine gas, and the need for additional high temperature heat treatment in a vacuum to remove residual magnesium and iron. All this reduces the efficiency of the processing of scrap anodes of tantalum capacitors, complicates the process requires special equipment.

The present invention is directed to the achievement of the technical result consists in increasing the efficiency of the method of recycling scrap anodes of tantalum oxide-semiconductor capacitors by reducing energy consumption and improve environmental performance of the method with obtaining capacitor tantalum powder of high quality. The technical result is also to simplify the method.

The technical result is achieved in that in the method for processing scrap anodes of tantalum on the sydnaya-semiconductor capacitors, including acid processing scrap with the removal of manganese dioxide, deoxidation cleared scrap, its hydrogenation, refining, dehydrogenation at elevated temperatures with the agglomeration of the powder of tantalum hydride and obtaining tantalum capacitor powder according to the invention, the acid treatment of the scrap is carried out at room temperature with a solution containing 100-300 g/l of sulfuric acid and 110-300 g/l hydrogen peroxide or a solution containing 30-150 g/l of hydrochloric acid and 75-225 g/l hydrogen peroxide, and hydrogenation of scrap carried out by treatment with a solution of hydrofluoric acid with a concentration of 1-5%.

The achievement of the technical result is driven by the fact that before the acid treatment, the scrap is ground to a particle size of not more than 2 mm and retrieve live tantalum wire.

The achievement of the technical result also contributes to the fact that before deoxidation scrap is treated with a solution of hydrofluoric acid with a concentration of 3-6%.

The essential features of the claimed invention, defining the scope of legal protection and sufficient to obtain the above-mentioned technical result function and correlate with the results as follows.

Carrying out the acid treatment of the scrap at room temperature due to the use of solutions of sulfuric or hydrochloric acid what you with the addition of hydrogen peroxide, in specific concentrations and ratio.

Processing scrap a solution containing 100-300 g/l of sulfuric acid and 110-300 g/l hydrogen peroxide or a solution containing 30-150 g/l of hydrochloric acid and 75-225 g/l hydrogen peroxide, allows for efficient leaching of manganese dioxide under mild conditions at room temperature, which contributes to obtaining a powder of high quality, makes the process less energy intensive and more environmentally friendly, and also simplifies its instrumentation.

The use of solutions with a concentration of H2SO4more than 300 g/l HCl or more than 150 g/l is irrational, since at this concentration is an intensive decomposition of hydrogen peroxide, and the leaching of manganese dioxide ceases. When the concentration of H2SO4less than 100 g/l HCl or less than 30 g/l leaching of manganese dioxide slows significantly and the volume of the solution is increased to such an extent that the process becomes ineffective.

The minimum amount of hydrogen peroxide required for leaching manganese dioxide corresponds to the stoichiometry. The hydrogen peroxide concentration of less than 110 g/l solution of sulfuric acid and less than 75 g/l solution of hydrochloric acid will be sufficient to complete the reaction leaching according to the stoichiometry. The concentration of peroxide of odor is Yes more than 300 g/l solution of sulfuric acid and more than 225 g/l solution of hydrochloric acid leads to excessive dilution of the acid, what makes the process inefficient.

Hydrogenation of scrap material by treatment with a solution of hydrofluoric acid with a concentration of 1-5% better cleaned from the remnants of magnesium and iron, to saturate the scrap hydrogen without high-temperature heat treatment that reduces energy consumption of the method and makes it easier while maintaining the high quality of the powder. When the concentration of hydrofluoric acid is less than 1% operation hydrogenation slows down, and at a concentration of more than 5% is excessive and uneven dissolution of the scrap material in relation to the required amount of hydrogen.

The combination of the above features is necessary and sufficient to achieve the technical result of the invention to reduce energy consumption and improve the environmental performance of the method with obtaining tantalum capacitor powder of high quality. All this increases the efficiency of processing scrap anodes of tantalum oxide-semiconductor capacitors with simultaneous simplification of the method.

In some cases, of the preferred embodiment of the invention the following specific operations and operational parameters.

The grinding of scrap before acid treatment to a particle size of not more than 2 mm can significantly reduce the length of the diffusion path of the reactants in the pores of the anodes on the Opera the AI leaching, reducing the duration of leaching and reduce the residual content of impurities of manganese. The grinding of scrap to the larger size makes the leaching process less effective. After grinding scrap, it is advisable to extract conductive tantalum wire, thereby increasing the specific surface area of the obtained capacitor powder.

Processing of scrap before it deoxidizing solution of hydrofluoric acid with a concentration of 3-6% allows you to remove the most contaminated, mainly compounds of manganese, the surface layer of the anode scrap and improve the quality of the powder.

The above private features of the invention allow a method to optimally from the point of view of reducing energy consumption and improve environmental performance of the method with obtaining tantalum capacitor powder high quality while simplifying the method.

The essence of the proposed method and achieved results more clearly can be illustrated by the following Examples.

In General, the method for processing scrap anodes of tantalum oxide-semiconductor capacitors according to the invention is as follows. Perform sorting of scrap material by size. Small anodes (the least no larger than 2 mm) n is directly subjected to acid treatment. Large anodes are pre-ground to a particle size of not more than 2 mm, using, for example jaw crusher, followed by the separation of conductive tantalum wire. Acid treatment of the scrap is carried out at room temperature dilute solution of sulfuric (100-300 g/l) or hydrochloric (30-150 g/l) acid, hydrogen peroxide, respectively 110-300 g/l and 75-225 g/l After completion of the leaching scrap is separated from the solution, which is sent for recycling. For a more complete removal of manganese dioxide scrap re-treated with a solution of the same composition, which is then used for the primary processing of the next lot of scrap. If necessary, the scrap is treated with a solution of hydrofluoric acid with a concentration of 3-6% for the dilution and removal of contaminated manganese surface layer, then washed with deionized water until neutral and dried. Then to remove oxygen contained in the anode oxide, scrap is subjected to the standard procedure of solid-phase magnesium deoxidation. The resulting magnesium oxide is removed with diluted mineral acids, for example hydrochloric or nitric. Cleared of magnesium oxide raskalennyi scrap hydronaut by treatment with a solution of hydrofluoric acid with a concentration of 1-5%. Hydrogen produced when the solution is AI tantalum, absorbed by its clean surface, providing the necessary fragility anode scrap. What if this update surface helps reduce the impurity content of magnesium and iron, introduced during the operation of deoxidation. After processing hydrofluoric acid propitiously scrap washed with deionized water until neutral and ground to a particle size less than 40 microns. The obtained powder of tantalum hydride digitalout with simultaneous agglomeration in a known manner by heating the powder in a stream of high purity argon to a temperature of 1350-1500°C with a holding time at maximum temperature for about 1 hour. The sinter is crushed in the cone inertial crusher type KYD-60 to particles less than 315 μm obtaining agglomerated tantalum capacitor powder. From powder to prepare anodes weighing 0.5 g, is sintered at a temperature of 1600-1650°C for about 45 min in vacuum with a residual pressure of not more than 5·10-5mm Hg Anodes formed in solution H3PO4with a concentration of 0.01% at a temperature of 80°C, the voltage molding 82, a current density of 35 mA/g and a standard measure electrical characteristics.

Example 1. Carry out the processing of the lot scrap anodes of tantalum oxide-semiconductor capacitors mass 1 kg is the Smallest anodes of 1.5 m is. Scrap processed in two phases at room temperature, diluted sulfuric acid solution containing 300 g/l H2SO4and 110 g/l H2O2for 6 and 4 hours. After separation of the scrap solution of the first stage are sent to recycling. The solution of the second stage is used for the primary processing of the next lot of scrap. Processed scrap washed with deionized water until neutral and dried. Dried scrap is subjected to the magnesium deoxidation in an argon atmosphere at a temperature of 850°C for 4 hours. After deoxidation scrap treated twice for 2 hours 18% HCl solution to remove magnesium oxide, after which raskalennyi scrap is treated for 1 hour with 5% solution of hydrofluoric acid and washed with deionized water. The hydrogen content in the scrap is of 0.27%.

Propitiously scrap milled in a rod mill for 90 minutes to provide a particle size less than 40 microns and a bulk density of 4.2 g/cm3. The obtained powder of tantalum hydride digitalout with simultaneous agglomeration by heating the powder in a stream of high purity argon to a temperature of 1350°C with a holding time at the maximum temperature for 1 hour. The sinter is crushed to particles less than 315 μm with getting 0,71 kg agglomerated tantalum capacitor powder. Containing the s impurities in the powder is ×10-4%: Mn 5 Mg not more than 5, Fe not more than 10, Ni not more than 5, the oxygen - 1300. From powder to prepare anodes. Electrical characteristics of the anodes were: the specific charge - 7300 µc/g, a breakdown voltage of about 200 V, the leakage current is 0,0003 µa/µc.

Example 2. Carry out the processing of the lot scrap anodes of tantalum oxide-semiconductor capacitors mass 1 kg is the Smallest anodes is 6 mm. Scrap is crushed using a jaw crusher to a particle size of not more than 2 mm sieve with a mesh size of 2 mm sieved tantalum current-carrying wire. Shredded scrap in the number 0,98 kg, treated in two phases at room temperature, diluted sulfuric acid solution containing 182 g/l H2SO4and 185 g/l H2O2for 6 and 4 hours. After separation of the scrap solution of the first stage are sent to recycling. The solution of the second stage is used for the primary processing of the next lot of scrap. Scrap processed within 4 hours of a 4% solution of hydrofluoric acid, then washed with deionized water until neutral and dried. Dried scrap is subjected to the magnesium deoxidation in an argon atmosphere at a temperature of 850°C for 4 hours. After deoxidation scrap treated twice for 2 hours 18% HCl solution to remove magnesium oxide, after which raskalennyi scrap clicks the organisms within 1 hour with a 2% solution of hydrofluoric acid and washed with deionized water. The hydrogen content in the scrap is 0.3%.

Propitiously scrap milled in a rod mill for 90 minutes to a particle size less than 40 microns and a bulk density of 4.3 g/cm3. The obtained powder of tantalum hydride digitalout with simultaneous agglomeration by heating the powder in a stream of high purity argon to a temperature of 1400°C with a holding time at the maximum temperature for 1 hour. The sinter is crushed to particles less than 315 μm to obtain 0.64 kg agglomerated tantalum capacitor powder. The content of impurities in the powder is, ×10-4%: Mn 5 Mg not more than 5, Fe not more than 10, Ni not more than 5, the oxygen - 1000. From powder to prepare anodes. Electrical characteristics of the anodes were: the specific charge - 7050 µc/g, a breakdown voltage of about 200 V, the leakage current is is 0.0002 ua/µc.

Example 3. Carry out the processing of the lot scrap anodes of tantalum oxide-semiconductor capacitors mass 1 kg is the Smallest anodes is 4.5 mm. Scrap is crushed using a jaw crusher to a particle size of not more than 2 mm sieve with a mesh size of 2 mm sieved tantalum current-carrying wire. Shredded scrap in the amount of 0.95 kg processed in two phases at room temperature, diluted sulfuric acid solution containing 100 g/l H2SO4and 300 g/l H2O2for 6 and 4 hours is. After separation of the scrap solution of the first stage are sent to recycling. The solution of the second stage is used for the primary processing of the next lot of scrap. Scrap processed within 4 hours of a 6% solution of hydrofluoric acid, then washed with deionized water until neutral and dried. Dried scrap is subjected to the magnesium deoxidation in an argon atmosphere at a temperature of 850°C for 4 hours. After deoxidation scrap treated twice for 2 hours 18% HCl solution to remove magnesium oxide, after which raskalennyi scrap is treated for 1 hour with 1% solution of hydrofluoric acid and washed with deionized water. The hydrogen content in the scrap is 0.25%.

Propitiously scrap milled in a rod mill for 90 minutes to a particle size less than 40 microns and a bulk density of 4.4 g/cm3. The obtained powder of tantalum hydride digitalout with simultaneous agglomeration by heating the powder in a stream of high purity argon to a temperature of 1450°C with a holding time at the maximum temperature for 1 hour. The sinter is crushed to particles less than 315 μm with getting 0,61 kg agglomerated tantalum capacitor powder. The content of impurities in the powder is, ×10-4%: Mn 5 Mg not more than 5, Fe not more than 10, Ni not more than 5, the oxygen - 1100. From a powder preparing the anodes. Electrical characteristics of the anodes were: the specific charge - 6500 µc/g, a breakdown voltage of about 200 V, the leakage current is is 0.0002 ua/µc.

Example 4. Carry out the processing of the lot scrap anodes of tantalum oxide-semiconductor capacitors mass 1 kg is the Smallest anodes is 3.5 mm. Scrap is crushed using a jaw crusher to a particle size of not more than 2 mm sieve with a mesh size of 2 mm sieved tantalum current-carrying wire. Shredded scrap in the amount of 0,94 kg, treated in two phases at room temperature, diluted hydrochloric acid solution containing 150 g/l HCl and 75 g/l H2O2for 6 and 4 hours. After separation of the scrap solution of the first stage are sent to recycling. The solution of the second stage is used for the primary processing of the next lot of scrap. Scrap is treated for 4 hours with 3% solution of hydrofluoric acid, then washed with deionized water until neutral and dried. Dried scrap is subjected to the magnesium deoxidation in an argon atmosphere at a temperature of 850°C for 4 hours. After deoxidation scrap treated twice for 2 hours 18% HCl solution to remove magnesium oxide, after which raskalennyi scrap is treated for 1 hour with 3% solution of hydrofluoric acid and washed with deionized water. The content in Dorada in the scrap is reported to be 0.29%.

Propitiously scrap milled in a rod mill for 90 minutes to a particle size less than 40 microns and a bulk density of 4.3 g/cm3. The obtained powder of tantalum hydride digitalout with simultaneous agglomeration by heating the powder in a stream of high purity argon to a temperature of 1400°C with a holding time at the maximum temperature for 1 hour. The sinter is crushed to particles less than 315 μm to obtain 0.6 kg agglomerated tantalum capacitor powder. The content of impurities in the powder is, ×10-4%: Mn 5 Mg not more than 5, Fe not more than 10, Ni not more than 5, the oxygen - 1100. From powder to prepare anodes. Electrical characteristics of the anodes were: the specific charge - 7230 µc/g, a breakdown voltage of about 200 V, the leakage current is is 0.0002 ua/µc.

Example 5. Carry out the processing of the lot scrap anodes of tantalum oxide-semiconductor capacitors mass 1 kg is the Smallest anodes is 4.5 mm. Scrap is crushed using a jaw crusher to a particle size of not more than 2 mm sieve with a mesh size of 2 mm sieved tantalum current-carrying wire. Shredded scrap in the amount of 0.97 kg processed in two phases at room temperature, diluted hydrochloric acid solution containing 90 g/l HCl and 130 g/l H2O2for 6 and 4 hours. After separation of the scrap solution of the first stage guide n the recycling. The solution of the second stage is used for the primary processing of the next lot of scrap. Processed scrap washed with deionized water until neutral and dried. Dried scrap is subjected to the magnesium deoxidation in an argon atmosphere at a temperature of 850°C for 4 hours. After deoxidation scrap treated twice for 2 hours 18% HCl solution to remove magnesium oxide, after which raskalennyi scrap is treated for 1 hour with a 2% solution of hydrofluoric acid and washed with deionized water. The hydrogen content in the scrap is 0.23%.

Propitiously scrap milled in a rod mill for 90 minutes to a particle size less than 40 microns and a bulk density of 4.5 g/cm3. The obtained powder of tantalum hydride digitalout with simultaneous agglomeration by heating the powder in a stream of high purity argon to a temperature of 1500°C with a holding time at the maximum temperature for 1 hour. The sinter is crushed to particles less than 315 μm to obtain 0.65 kg agglomerated tantalum capacitor powder. The content of impurities in the powder is, ×10-4%: Mn 5 Mg not more than 5, Fe not more than 10, Ni not more than 5, the oxygen - 1100. From powder to prepare anodes. Electrical characteristics of the anodes were: the specific charge - 6100 µc/g, a breakdown voltage of about 200 V, the leakage current is 0.0001 ua/IWC is.

Example 6. Carry out the processing of the lot scrap anodes of tantalum oxide-semiconductor capacitors mass 1 kg is the Smallest anodes is 1.1 mm. Scrap processed in two phases at room temperature, diluted hydrochloric acid solution containing 30 g/l HCl and 225 g/l H2O2for 6 and 4 hours. After separation of the scrap solution of the first stage are sent to recycling. The solution of the second stage is used for the primary processing of the next lot of scrap. Scrap processed within 4 hours of a 6% solution of hydrofluoric acid, then washed with deionized water until neutral and dried. Dried scrap is subjected to the magnesium deoxidation in an argon atmosphere at a temperature of 850°C for 4 hours. After deoxidation scrap treated twice for 2 hours 18% HCl solution to remove magnesium oxide, after which raskalennyi scrap is treated for 1 hour with 5% solution of hydrofluoric acid and washed with deionized water. The hydrogen content in the scrap is of 0.27%.

Propitiously scrap milled in a rod mill for 90 minutes to provide a particle size less than 40 microns and a bulk density of 4.2 g/cm3. The obtained powder of tantalum hydride digitalout with simultaneous agglomeration by heating the powder in a stream vysokochistogo the argon to a temperature of 1350°C with a holding time at the maximum temperature for 1 hour. The sinter is crushed to particles less than 315 μm to obtain 0.7 kg agglomerated tantalum capacitor powder. The content of impurities in the powder is, ×10-4%: Mn 5 Mg not more than 5, Fe not more than 10, Ni not more than 5, the oxygen - 1300. From powder to prepare anodes. Electrical characteristics of the anodes were: the specific charge - 7260 µc/g, a breakdown voltage of about 200 V, the leakage current is 0,0003 µa/µc.

From the above Examples it is seen that in the inventive method, the acid treatment of scrap, compared with the prototype, is conducted at room temperature and no additional heat treatment of the scrap material in a vacuum at a temperature of 1800°C, which allows to reduce the energy intensity of the method and to improve its environmental friendliness while simplifying the way. The resulting processing scrap capacitor tantalum powder provides when used in the anodes of tantalum oxide-semiconductor capacitors: the specific charge to 7300 µc/g, the breakdown voltage of more than 200 V and the leakage current of 0.0001-0,0003 µa/µc, which testifies to the effectiveness of the claimed method. The method according to the invention is relatively simple and can be implemented in an industrial environment.

1. Method for processing scrap anodes of tantalum oxide-semiconductor capacitors, including cleaning acid treatment of refuse removal dioc the IDA manganese, the deoxidation of cleared scrap, its hydrogenation, refining, dehydrogenation at elevated temperatures with the agglomeration of the powder of tantalum hydride and obtaining tantalum capacitor powder, characterized in that the acid treatment of the scrap is carried out at room temperature with a solution containing 100-300 g/l of sulfuric acid and 110-300 g/l hydrogen peroxide or a solution containing 30-150 g/l of hydrochloric acid and 75-225 g/l hydrogen peroxide, and hydrogenation of scrap carried out by treatment with a solution of hydrofluoric acid with a concentration of 1-5%.

2. The method according to claim 1, characterized in that before the acid treatment, the scrap is ground to a particle size of not more than 2 mm and retrieve live tantalum wire.

3. The method according to claim 1, characterized in that before deoxidation scrap is treated with a solution of hydrofluoric acid with a concentration of 3-6%.

 

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