Method of obtaining thin-film copper-germanium joint
SUBSTANCE: method of obtaining a thin-film copper-germanium joint involves successive deposition of Ge and Cu layers on the surface of a plate and forming a thin-film copper-germanium joint which is carried out over a time t≥0.5 minutes in an atmosphere of atomic hydrogen at temperature T=20-120°C and hydrogen atom flux density on the surface of the plate equal to 1013-1016 at.cm-2 s-1.
EFFECT: lower temperature and shorter time for obtaining a thin-film copper-germanium joint.
7 cl, 6 dwg
The invention relates to the technology of microelectronics, in particular to a technology for thin film metal compounds, in particular to the creation of the barrier metallization contacts, metallization level and inter-element wiring and the metallization of the back side of the plates.
Thin-film copper-germanium compounds, in particular, Cu3Ge have low layer resistance commensurate with the resistance of the copper film, in addition, in contrast to copper, have a high resistance to oxidation in air, and low chemical and diffusion activity.
A method of obtaining a semiconductor device (US patent No. 3765956, IPC SW 21/02, publ. 16.11.1973,), in which the metallization is used as a compound of copper with germanium obtained through the melting of raw materials.
The disadvantage of this method is that the formation of copper-germanium compounds produced through the liquid phase, which significantly narrows the scope of application of the method. In addition, the resulting compound does not have a stoichiometric composition Cu3Ge and, therefore, does not have the lowest layer resistance.
A method of obtaining a thin-film copper-germanium compounds Cu3Ge (US patent No. 5330592, IPC SS 1/00, publ. 19.07. 1994), in which the surface of the semiconductor ü plate methods magnetron sputtering, electron beam evaporation or thermal evaporation in vacuum to produce the sequential deposition of layers of Ge, then Au or Ga, or a mixture of Au and Ga, and then a layer of Cu. Thus the total thickness of the layers is in the range of 150-200 nm, and the concentration content of Au or Ga, or a mixture of Au and Ga in layers is in the range from 1%to 15%. Then the plate is cast heat-treated at a temperature of T=150-500°C for t=15-180 minutes
The disadvantage of this method is the use of high temperatures and prolonged heat treatment.
A method of obtaining a thin-film copper-germanium connection (patent EP 472804 B1, IPC H01L 21/3205, publ. 30.07.1997,), essentially the most close to the proposed technical solution chosen for the prototype. How is that on the plate surface produce sequential deposition of layers of Ge and Cu at room temperature. Then the plate is subjected to heat treatment at a temperature of T=150-200°C for t=20-30 minutes. As a result of such processing on the surface of the plate is formed a layer of copper-germanium compounds Cu3Ge, having a low value layer resistance.
The disadvantages of this method include the need to perform processing at a high temperature for a long period of time that does not allow you to use ways is in the manufacture of semiconductor devices and monolithic integrated circuits by the method of inverse lithography.
The main technical objective of the proposed method is to reduce the temperature and time of receiving the thin-film copper-germanium compounds.
This object is achieved in that in a method of producing thin-film copper-germanium compounds, comprising the sequential deposition of layers of Ge and Cu on the surface of the plate and forming a thin-film copper-germanium compounds according to the proposed solution, the formation of thin-film copper-germanium compounds can be performed during time t≥0.5 minutes, in an atmosphere of atomic hydrogen at a temperature of T=20-120°C, and the flux density of hydrogen atoms on the surface of the plate equal to 1013-1016ATM-2with-1.
In the particular case, the formation of thin-film copper-germanium compounds in the atmosphere of atomic hydrogen is produced in a single vacuum cycle sequential deposition of layers of Ge and Cu.
In the particular case, the plate is made on the basis of GaAs or on the basis of epitaxial GaAs heterostructures with n-layers on the surface.
In the particular case, on the surface of the plate is pre-formed layers and/or topological elements.
In the particular case, on the surface of the plate pre-form the resistive mask.
In the particular case, on the plate surface precipitate of at least the e two alternating layers of Ge and Cu with a thickness, specifies the Ge concentration in the Cu equal to 15-40%.
In the particular case, impose additional Au and/or Ga content concentration equal to 1-15%.
Conducted by the applicant's analysis of the level of technology has allowed to establish that the analogs are characterized by the sets of characteristics is identical for all features of the proposed method are missing.
Search results known solutions in this and related areas of technology in order to identify characteristics that match the distinctive features of the prototype of the invention has shown that they do not follow explicitly from the prior art.
Of certain of applicant's prior art there have been no known effect provided essential features of the invention transformations on the achievement of the technical result. Therefore, the invention meets the condition of patentability "inventive step".
Figure 1 shows the electron microscopic picture of the surface of the GaAs plate with unformed thin-film copper-germanium compound; figure 2 - the surface of the GaAs plate formed with thin-film copper-germanium compound, obtained according to the method prototype; figure 3 - the surface of the GaAs plate formed with thin-film copper-germanium compound, obtained according to the claimed method./p>
4 shows electron microscopic picture of the cross section of the GaAs plate with unformed thin-film copper-germanium compound; figure 5 - cross section of the GaAs plate formed with thin-film copper-germanium compound, obtained according to the method prototype; figure 6 - cross section of the GaAs plate formed with thin-film copper-germanium compound, obtained according to the claimed method.
Implementation of the proposed method using a wafer of GaAs is as follows. The plate surface is cleaned in an aqueous solution of H2SO4or HCl with subsequent rinsing in deionized water and drying. Then using methods of electron-beam and/or thermal evaporation in vacuum at a residual pressure of less than 5×10-6Torr on the surface of the plate to produce the deposition of layers of Ge and Cu total thickness of 100-500 nm with the concentration of the germanium concentration equal to 15-40%. Then the plate was processed in an atmosphere of atomic hydrogen at a temperature of T=20-120°C and flux density of hydrogen atoms on the surface of the plate equal to 1013-1016ATM-2with-1during time t≥0.5 minutes.
The minimum value of the flux density of hydrogen atoms on the surface of the plate equal to 1013ATM-2with-1that ass is t a maximum duration of technological processes. At the lowest flux density of atoms on the surface of the plate, the time required for the processes of interaction of copper and Germany becomes unacceptable.
The minimum temperature of formation of the thin-film copper-germanium compounds are asking typical value at room temperature. Using temperature less than 20°C is possible only with use of special devices to reduce the temperature of the plate that is not economically feasible.
The maximum value of the temperature of formation of copper-germanium compounds represent the maximum temperature that can withstand resistive mask for the formation of images of topological elements created devices and monolithic integrated circuits.
The maximum value of the flux density of hydrogen atoms on the surface of the plate equal to 1016ATM-2with-1determine the limits of the technical possibilities available sources of atomic hydrogen.
The minimum time of forming the thin-film copper-germanium compounds in atomic hydrogen is determined by the time at which reach the result.
The example demonstrates the technical result, which reach the proposed method relative to the prototype method.
In the experiment the x used a GaAs wafer. Before deposition of the metallization to clean the surface and remove native oxides of arsenic and gallium the GaAs wafer was treated with in aqueous HCl (1:10) for 3 minutes and then washed in deionized water and dried in a stream of nitrogen. Next, the GaAs wafer was divided into two parts and placed in a vacuum chamber for the deposition of thin films. On both parts of the wafer by electron beam evaporation in vacuum successively besieged Ge layers with a thickness of 78 nm, and Cu with a thickness of 122 nm. The residual pressure of the atmosphere was 4×10-6Torr. After deposition, by analogy with the method of the prototype, the first part of the GaAs plate was subjected to heat treatment in vacuum at a temperature of T=150°C, for t=30 minutes, and the second part of the plate was subjected to processing in an atmosphere of atomic hydrogen at a pressure of molecular hydrogen p=10-4Torr and flux density of the hydrogen atoms of 1015ATM2with-1during t=5 minutes at a temperature of T=22°C. Then both plates GaAs was removed from the vacuum chamber and examined using scanning electron microscopy.
From electron microscopic images in figure 1-6, it is seen that the plate surface of Cu/Ge/GaAs after deposition is small, undeveloped terrain (figure 1). The surface of the wafer after forming the thin-film copper-germanium compounds, the scientists in the method prototype (figure 2) and the proposed method (figure 3), have developed terrain with the same morphology. Change the relief of the plates, with the formed thin-film copper-germanium compounds obtained in the method prototype and the proposed method relative to the plate with unformed thin-film copper-germanium compound is caused by the occurrence of solid-phase reactions between layers of Cu and Ge during the process of forming the connection.
Microscopic examination of the cross-section of the plate Cu/Ge/GaAs after deposition (figure 4) and plates formed with thin-film copper-germanium compounds obtained in the method prototype (figure 5) and the proposed method (6), showed that in both cases, as under the influence of heat treatment and under the influence of atomic hydrogen is full interaction of layers of Cu and Ge, leading to the formation of thin-film copper-germanium compounds with vertically oriented grains. When forming the thin-film copper-germanium compounds according to the present method, unlike the prototype method, occurs at room temperature and for less time.
1. A method of obtaining a thin-film copper-germanium compounds, comprising the sequential deposition of layers of Ge and Cu on the surface of the plate and forming a thin-film honey is about-germanium compounds characterized in that the formation of thin-film copper-germanium compounds can be performed during time t≥0.5 min in an atmosphere of atomic hydrogen at a temperature of T=20-120°C and flux density of hydrogen atoms on the surface of the plate equal to 1013-1016ATM-2c-1.
2. The method according to claim 1, characterized in that the formation of thin-film copper-germanium compounds in the atmosphere of atomic hydrogen is produced in a single vacuum cycle sequential deposition of layers of Ge and Cu.
3. The method according to claim 1, characterized in that the plate is made on the basis of GaAs or on the basis of epitaxial GaAs heterostructures with n layers on the surface.
4. The method according to claim 1, characterized in that on the surface of the plate is pre-formed layers and/or topological elements.
5. The method according to claim 1, characterized in that on the surface plate pre-form the resistive mask.
6. The method according to claim 1, characterized in that the plate surface is precipitated at least two alternating layers of Ge and Cu with a thickness that specifies the Ge concentration in the Cu equal to 15-40%.
7. The method according to claim 1, characterized in that it further impose the AI and/or Ga content concentration equal to 1-15%.
FIELD: material engineering.
SUBSTANCE: method of application of metallic nanolayers in chemical method involves the technology of chemical sedimentation of metals, in particular of copper (Cu) at the speed 1 μm/min with the solution temperature 50 to 60°C. As the basic copper-containing reagent for applying metallic nanolayers on silver electric contacts of silicon solar cells the inorganic copper salts are used. Technical result of the invention is the thickening of frontal electric contact of solar cell by sedimentation of metals, in particular copper, with good electric conductivity, in order to compensate or improve its increased electric conductivity.
EFFECT: increased effectiveness of solar cell operation during transformation of high-density radiation and decreased self-cost of its manufacturing.
4 cl, 4 dwg
SUBSTANCE: in the method to manufacture Cu-Ge ohmic contact on the surface of the plate n-GaAs or epitaxial heterostructure GaAs with n-layer a resistive mask is developed, fims of Ge and Cu are deposited, the first thermal treatment is carried out in the atmosphere of atomic hydrogen at the temperature from 20 to 150°C and density of hydrogen atoms flow to the surface of the plate equal to 1013-1016 at.cm-2 s-1. Plates are withdrawn from a vacuum chamber of a spraying plant, the resistive mask is removed before or after the first thermal treatment, and the second thermal treatment is carried out.
EFFECT: reduced value of the given contact resistance.
7 cl, 1 dwg
SUBSTANCE: method to metallise elements in products of electronic engineering includes application of a sublayer of a metallising coating on one of substrate surfaces with previously formed topology of elements in an appropriate product, and this sublayer is a system of metals with the specified thickness, providing for adhesion of the main layer of the metallising coating, formation of topology - protective photoresistive mask of the main layer of metallising coating, local application of the main layer of the metallising coating, removal of protective mask, removal of a part of the sublayer arranged outside the topology of the main layer of the metallising coating. Application of the sublayer of the metallising coating is carried out with the total thickness of 0.1-0.5 mcm, directly onto the specified sublayer additionally a technological layer is applied from an easily oxidable metal with thickness of 0.1-0.5 mcm, and formation of the metallising coating topology is carried out on the technological layer from the easily oxidable metal. Prior to local application of the main layer of the metallising coating a part of the technological layer is removed from the easily oxidable metal via the specified protective mask, and removal of the remaining part of the technological layer from the easily oxidable metal is carried out prior to removal of a part of the sublayer of the metallising coating arranged outside the topology of the main layer of the metallising coating.
EFFECT: increased quality of the metallising coating and reliability of electronic engineering products, improved electrical characteristics, increased yield of good products.
6 cl, 3 dwg, 1 tbl
SUBSTANCE: proposed method comprises pre-cleaning of GaSb p-junction conductance by ion-plasma etching to depth of 5-30 nm with subsequent deposition by magnetron sputtering of adhesion titanium 5-30 nm-thick layer and platinum 20-100 nm-thick barrier layer, evaporating thermally of 50-5000 nm-thick silver layer and 30-200nm-thick gold layer for contact with ambient medium.
EFFECT: reproducible ohmic contact with low specific junction resistance.
2 cl, 1 dwg
SUBSTANCE: method of depositing platinum layers onto a substrate involves pre-formation of an intermediate adhesion layer from a mixture of platinum and silicon dioxide nanocrystals on a silicon oxide and/or nitride surface. The intermediate adhesion layer with thickness 1-30 nm can be formed via simultaneous magnetron sputtering using magnetrons with platinum and silicon dioxide targets, respectively.
EFFECT: high quality of elements, processes, reliability during prolonged use, adhesion of the deposited layers to the substrate.
8 cl, 3 dwg
SUBSTANCE: method of making an ohmic contact to GaAs based on thin Ge and Cu films involves formation a mask on the surface of an n-GaAs wafer in order to perform lift-off lithography, deposition of thin Ge and Cu films onto the surface of the n-GaAs wafer, first thermal treatment in a single vacuum cycle with the deposition process, removing the n-GaAs wafer from the vacuum chamber, removing the mask and second thermal treatment. First thermal treatment is carried out in an atmosphere of atomic hydrogen at temperature 150-460°C and hydrogen atom flux density on the surface of the n-GaAs wafer equal to 1013-1016 at.cm2 s-1.
EFFECT: low value of the reduced contact resistance of the ohomic contacts made.
4 cl, 1 dwg
SUBSTANCE: method of making interconnections of a semiconductor device involves formation of a silicon structure in an insulating layer, in which semiconductor devices are formed, contact wells and trenches under future interconnection conductors, successive deposition of an adhesive-wetting layer and a solid catalyst layer at the bottom and wall of the contact wells and trenches, filling the depressions of contact wells and trenches with carbonaceous material through stimulated plasma chemical deposition of the carbon structure from the gas phase on the solid catalyst layer and planarisation of the surface of the silicon structure.
EFFECT: high thermal stability and reduced heating of IC interconnections in conditions of reduction of their cross-sectional area and high current density, low resistivity of the interconnection material compared to carbon nanotubes.
3 cl, 3 dwg
SUBSTANCE: in manufacturing method of multi-level copper metallisation of VLSIC, which involves application operations of metal and dielectric layers, photolithography and selective etching of those layers, chemical mechanical polishing of dielectric layers, to plate of silicium, which is coated with dielectric material with vertical conductors of underlying structure, which protrude on its surface, there applied is multi-layered conducting film consisting of adhesive barrier, etched and auxiliary layers; grooves are formed in auxiliary layer before etched layers by electrochemical method; copper horizontal conductors are grown inside grooves in open sections of etched layer till grooves are fully filled; the second auxiliary layer is applied to surface of plate, and in that layer holes are made to the surface of horizontal copper conductors; vertical copper conductors are grown by electrochemical method in open sections of horizontal conductors till holes for vertical conductors are fully filled; then, auxiliary layers are removed; conducting layers between horizontal copper conductors are removed; dielectric layers are applied to surface of the plate by smoothing and filling methods, and then dielectric material layers are removed above vertical conductors by means of chemical and mechanical polishing method.
EFFECT: improving quality of copper conductors.
16 cl, 11 dwg, 1 tbl
SUBSTANCE: method of forming contact drawing from nickel on silicon wafers involves formation of a dielectric film with windows, chemical deposition of nickel in said windows and formation of a nickel silicide interlayer from the gas phase during thermal decomposition of nickel tetracarbonyl vapour at temperature 200-300°C, pressure in the system of (1-10)-10-1 mm Hg and rate of supplying nickel tetracarbonyl vapour equal to 0.5-2 ml/min per dm2 of the covering surface. The nickel layer is then removed up to the nickel silicide layer through chemical etching and nickel is deposited via chemical deposition onto the nickel silicide interlayer in the window of the dielectric film.
EFFECT: invention enables formation of a transparent contact for an electroconductive layer based on nickel with low ohmic resistance, independent of the type of conductivity and degree of doping of the silicon surface.
1 ex, 1 tbl
SUBSTANCE: in the method of making a multilayer ohmic contact to n-GaAs, involving creation of a double-layer photoresist mask on the surface of a wafer, layerwise deposition of films based on Ge and Au with film thickness corresponding to eutectic composition, and common thickness of 50-300 nm, deposition of Ni-based films with thickness of 10-100 nm, diffusion barrier films with thickness of 10-200 nm, and a top Au film having thickness of 10-1000 nm, removal of the double-layer photoresist mask and thermal treatment of the contacts in an inert atmosphere, deposition of Ge, Au, Ni and Au films onto the a GaAs surface is performed with flight angle of atoms of these materials relative the normal to the surface of the wafer lying in the range of 0-2°, and deposition of a diffusion barrier film based on Ti, Ta, W, Cr, Pt, Pd, TiW, TIN, TaN or WN is performed with flight angle atoms β=n×α, where α is flight angle of Ge, Au, Ni atoms, n=2-10. Thermal treatment is carried out for 1-30 minutes or in a fast thermal annealing device for 30-300 seconds.
EFFECT: low value of reduced contact resistance of the multilayer ohmic contacts.
2 cl, 6 dwg
FIELD: electronic engineering; integrated circuit manufacture on silicon.
SUBSTANCE: proposed method includes formation of active areas of devices on substrate; masking; opening of contact cuts for active areas; formation of metal deposition system that has amorphous metallide possessing negative mixing heat and incorporating components characterized in higher pressure of inherent vapors or higher sublimation heat than substrate material, and other components of metal deposition system. High stability of metal deposition system provides for manufacturing semiconductor device capable of operating at high temperatures approximately over 650 °C.
EFFECT: provision for preventing ingress of metal deposition system components into active area and escape of impurities from the latter.
6 cl, 2 dwg, 1 tbl
FIELD: micro- and nanoelectronics, micro- and nanomechanics where insulated conductors are used.
SUBSTANCE: proposed method for filling pockets in solid body with conducting material includes coating of solid-body surface, bottom, and side walls of mentioned pockets with first layer that functions as barrier material preventing diffusion of mentioned conducting material in solid body; application of second layer onto first one that functions as wetting layer for conducting material; application of third layer by way of physical or chemical deposition onto third one from gas phase that has in its composition mentioned conducting material; coating of third layer with fourth one that also incorporates conducting material; melting of conducting material by heating and profile leveling; material melting by heating is conducted after applying third layer and fourth layer is applied by any method of physical deposition from gas phase, chemical deposition from gas phase, chemical deposition from solution, electrochemical deposition, or chemical-mechanical deposition.
EFFECT: facilitated procedure, enlarged functional capabilities.
12 cl, 17 dwg
FIELD: ink jet printers.
SUBSTANCE: method includes precipitating resistive layer and conductive layer on insulated substrate, forming a resistive heating element, forming of insulating barrier layer above contour of said conductive layer, forming of gap in said barrier layer, forming of metallic layer being in electrical contact with said conductive layer contour through said gap, having geometry, which opens predetermined portion of said contour of conductive layer, making a layout from metallic layer from said contour of conductive layer through said gap in insulating barrier layer to adjacent portion of said insulated substrate, so that layout from metallic layer on said adjacent portion of said insulating substrate forms a relatively large and flat area, remote from said conductive layer contour, for forming displaced spring contact. After precipitation of resistive layer and conductive layer on insulating substrate, contour of conductive layer is formed first, having a recess, forming later said resistive heating element, and then contour of resistive layer is formed with overlapping of conductive layer contour for value, exceeding precision of combination during lithography process and error of dimensions during etching of resistive layer.
EFFECT: higher quality, higher reliability, higher efficiency.
2 cl, 10 dwg
FIELD: ink-jet printers and their printheads having small holes for programmable ejection of ink droplets.
SUBSTANCE: proposed method for producing printhead thin-film interconnection structure includes deposition of resistor layer and conductor layer onto insulated substrate, formation of patterns of layers deposited onto insulated structure to form resistive heating element, formation of insulating barrier layer onto pattern of mentioned conductor layer, formation of window in mentioned barrier layer, production of metal layer contacting mentioned conductor layer pattern through mentioned window whose geometry opens up predetermined area of mentioned conductor layer pattern, and metal layer pads on insulating barrier layer above heating layer; prior to arrangement of conductors from metal layer, insulating barrier layer is treated with etching solution for cleaning and recovering surface insulating barrier layer, and along with wiring of metal layer from mentioned conductor layer pattern through mentioned window in insulating barrier layer on adjacent area of mentioned insulated substrate metal layer wiring section is made in the form of pad on insulating barrier layer above heating element used as stabilizing evaporation surface. In this way insulating barrier layer is cleaned and its properties are recovered, metal layer wiring adhesion to insulating barrier layer, and especially adhesion of metal layer pad to insulating barrier layer above heating element, is enhanced.
EFFECT: enhanced quality and reliability of printhead.
3 cl, 11 dwg
FIELD: producing copper tracks on insulating substrates.
SUBSTANCE: negative image of track is projected onto copper halide solution layer in organic solvent of substrate with the result that concentric capillary flow occurs in layer which transfers solution to illuminated sections of substrate wherein copper halide tracks remain upon solvent evaporation. These tracks are reduced to copper ones in hydrogen current at temperature sufficient to conduct reducing reaction.
EFFECT: facilitated procedure, reduced cost and copper consumption, improved environmental friendliness due to elimination of wastes.
1 cl, 3 dwg
FIELD: microelectronics; complementary metal-oxide-semiconductor transistors.
SUBSTANCE: proposed method for producing CMOS transistor gate regions includes formation of regions of second polarity of conductivity, insulator, and gate silicon dioxide in substrate of first polarity of conductivity, deposition of polycrystalline silicon layer, its doping, formation of gate regions of p- and n-channel transistors, thermal cleaning in trichloroethylene and oxygen, deposition of separating silicon dioxide, modification, formation of drain and source regions of both polarities of conductivity, thermal cleaning in trichloroethylene and oxygen, deposition of pyrolytic insulating silicon dioxide, its modification by thermal firing in trichloroethylene and oxygen, opening of contact windows, metal deposition, and process operations (removal of natural silicon dioxide, formation of gate silicon dioxide, formation of polycrystalline silicon layer) conducted within single vacuum cycle of one reactor, whereupon polycrystalline silicon layer is doped.
EFFECT: improved and regulated electrophysical properties of gate silicon dioxide enabling enhancement of threshold voltage reproducibility and yield.
4 cl, 3 dwg
FIELD: ohmic contacts for microelectronic devices such as microwave field-effect transistors.
SUBSTANCE: proposed method includes production of vacuum in vacuum chamber, sequential electron-beam evaporation of Ti, Al, Ni, and Au in vacuum chamber onto section of AlGaN layer surface, and high-temperature annealing; prior to Ti, Al, Ni, Au evaporation Ti is sprayed in vacuum chamber to form 2-3 Ti monolayer on surfaces of elements disposed within vacuum chamber; Ti, Al, Ni, Au are evaporated onto section of AlGaN layer surface at vacuum of 1 x 10-7 to 1 x 10-8 mm Hg.
EFFECT: reduced contact resistance of ohmic contacts due to reduced amount of residual oxygen and water vapors in vacuum chamber.
FIELD: ohmic contacts for microelectronic devices such as microwave field-effect transistors.
SUBSTANCE: proposed method includes sequential evaporation of Ti, Al, Ni, Au onto section of AlGsN surface layer and fast thermal annealing of semiconductor heterostructure; fast thermal annealing is conducted using contact method and graphite resistive heater, semiconductor heterostructure being disposed on heater surface. In the course of annealing temperature of GaN/AlGsN semiconductor heterostructure is controlled to ensure reproducibility of its parameters.
EFFECT: facilitated procedure, reduced time requirement, enhanced quality of heterostructure.
FIELD: light devices production.
SUBSTANCE: method of quantum wells mixing within semiconductor device implies: a) formation of layer structure with quantum wells including doped upper layer; b) formation of etch preventing layer over mentioned upper layer; c) formation of temporary layer over mentioned etch preventing layer, and mentioned etch preventing layer has significantly lower etch rate than mentioned temporary layer on condition that etching requirements are preliminary specified; d) process of quantum wells mixing upon device structure making significant violation of at least a part of consumed layer; e) removal of temporary layer from at least device contact area by etching selective relative to etch preventing layer to uncover mentioned etch preventing layer within contact area; and f) formation of contact over layer structure with quantum wells directly on the surfaced uncovered after execution of stage e) at least within mentioned contact area.
EFFECT: improvement of device contact resistance.
15 cl, 10 dwg
SUBSTANCE: invention pertains to electronics, particularly to microelectronics, and can be used when making silicon semiconductor devices. The method of making a system for metal plating silicon semiconductor devices involves forming a dielectric film based on silicon dioxide on a silicon substrate with active regions, formation in this film of contact windows to active elements of the substrate, deposition of a film of molten aluminium with a given thickness, formation of the metal pattern and subsequent thermal treatment for obtaining ohmic contacts. Thermal treatment is carried out in a hydrogen atmosphere with addition of 0.5-3.0 vol.% water or 0.25-1.5 vol.% oxygen.
EFFECT: higher quality of the system of metal plating due to reduced defectiveness and improved electrical characteristics.