Method of chemical dynamic polishing

FIELD: process engineering.

SUBSTANCE: proposed method comprises placing plate to be polished in etching chemical solution. Note here that said plate is secured to vacuum holder by plate non-working side while plate working side in downed into said solution. Said plate is rotated about its axis and, simultaneously, moved regularly along the circuit.

EFFECT: uniform polishing.

5 dwg, 3 ex

 

The technical field

The invention relates to the problems of chemical-dynamic polishing material. To achieve the goal of the invention can be used as the material of metals, dielectrics, semiconductors and their compounds. In particular, a method of chemical-dynamic polishing a silicon wafer, a film of silicon dioxide or a layer of tungsten deposited on the silicon wafer, which is attached to rotate the holder outside the party descends into the chemical solution of the working party and rotates with a certain speed in a chemical solution that allows you to provide the same average speed of all points of a polished surface of the plate relative to the chemical solution and leads to a uniform interaction between the silicon plate and a chemical solution that provides a uniform polishing effect and, accordingly, ensures uniformity of the polished material.

The level of technology

Chemical-dynamic polishing material (metal, dielectric, semiconductor and their compounds), which is attached to rotate the holder outside the party descends into the chemical solution of the working party and rotates with a certain speed in a chemical solution that allows you to provide the same average speed of all points polishing is my surface plate in a chemical solution and leads to a uniform interaction between the silicon plate and a chemical solution, that ensures a uniform polishing effect and, accordingly, ensures uniformity of the polished material.

There is a method of conducting a chemical-dynamic polishing, which is traditional in the processing of the working side of a silicon wafer [Rodionov Y.A. Basic technological processes in microelectronics. Minsk: 2006]. This method is carried out by rotating the chemical solution is relatively stationary si wafer with a speed of 60-80 rpm by the rotation inclined at an angle of 30-45° with the chemical solution is placed inside a silicon wafer. Commonly used chemical solution containing nitric acid, hydrofluoric acid and acetic acid, with the ratio of components HNO3:HF:CH3COOH=8:5:5, 14:3:3 and 40:1:1. The etching rate depends on the type of material, its orientation to the crystallographic axes and the temperature of the chemical solution. The disadvantages of this method are the immobility of a silicon wafer during processing, which does not allow for uniform friction between the silicon plate and a chemical solution, and this arrangement of the plates allows the products in a chemical reaction to Deposit on the surface of the plate and cause additional pollution and, accordingly, the defect.

There is also known a method of chemical-dynamic floor the programme, in which the plate is placed on a rotating holder coaxially with the axis of rotation, and a chemical reagent is fed by a stream tangentially to the treated surface [Garipov VG, Shmelev NI, Garanin VP RF Patent №2045108 // Method of chemical-dinamicaly processing wafers of gallium arsenide. No. 5008191/25; filing date 01.07.1991; published 27.09.1995]. The disadvantages of this method are the inability to provide uniform exposure of the chemical solution on the surface of the treated plate is required for planar polishing, and the likelihood of additional defects associated with exposure to jet chemical reagent.

The closest technical solution to this invention is a method of chemical-dynamic polishing, in which the plate is installed in the environment of the chemical solution on a special holder (disk), which rotates at a specific speed [tomasic SF, Okrepkie G.M., tomasik V.N., Moravec P., Gell P. Chemical interaction of single crystals of ZnxCd1-xTe with aqueous solutions of HNO3-HBr-lactic acid // Condensed matter and interphase boundary, 2008. Vol.10, No. 2. P. 166-171]. This method allows you to achieve a surface roughness (Rz) in some areas at the level of 0.05 μm, however, does not provide uniform polishing over the whole working surface is ti plate due to the different average speeds of movement of each point of the plate, and also introduces additional defects due to the location of the plate on the drive side up.

The proposed method of carrying out chemical-dynamic polishing eliminates these disadvantages, since the silicon wafer is attached to rotate the holder outside the party descends into the chemical solution of the working party and rotates with a certain speed in a chemical solution that allows you to provide the same average speed of all points of a polished surface of a wafer in a chemical solution and leads to a uniform interaction between the silicon plate and a chemical solution that provides a uniform polishing effect and, accordingly, ensures uniformity of the polished material. This plate allows you to provide a clean surface polished material during removal of the reaction products. This is due to the fact that after the reaction the deleted products are directly transferred from the working surface down into the solution, and the surface remains clean, which leads to the decrease of defects in the process of chemical-dynamic polishing.

The process control is performed by controlling the rotation speed of a silicon wafer in a chemical solution circumferentially around its axis, which allows to provide the same cf the working day, the speed of movement of all points of a polished surface of a wafer in a chemical solution and leads to a uniform interaction between the silicon plate and a chemical solution, that ensures a uniform polishing effect and, accordingly, ensures uniformity of the polished material.

For holding and rotating a silicon wafer in a chemical solution does not require complex adaptations, and this method is easily implemented.

Disclosure of inventions

The problem to which this invention is directed, is the achievement of the technical result consists in increasing the uniformity of chemical-dynamic polishing of silicon wafers, dielectric and metal films and reduce the defects in these materials during chemical-dynamic polishing due to the attachment to rotate the holder outside party, the lowering in the chemical solution of the working party and rotation with a certain velocity in a chemical solution that allows you to provide the same average speed of all points of a polished surface of a wafer in a chemical solution and leads to a uniform interaction between the silicon plate and a chemical solution that provides a uniform polishing effect and, accordingly, ensures uniformity of the polished material. This arrangement allows the material to maintain clean polished surface of the material during the removal of the reaction products. This is due to the fact that after the reaction-the by-products immediately transferred from the working surface down into the solution, and the surface remains clean, which leads to the decrease of defects in the process of chemical-dynamic polishing. This technology does not require the development of sophisticated equipment.

The problem is solved using a Teflon reservoir (bath) for etching, in which is immersed a silicon wafer fixed by a vacuum holder so that the plate was placed in the solution and was located outside party to the holder, and the working party to the solution. The holder plate is lowered into the solution. Silicon wafer rotates uniformly in a chemical solution due to uniform circular motion and simultaneously around its axis (figure 1). This method allows you to provide the same average speed of all points of a polished surface of a wafer in a chemical solution and leads to a uniform interaction between the silicon plate and a chemical solution that provides a uniform polishing effect and, accordingly, ensures uniformity of the polished material.

Thus, the distinctive features of the invention is that the polymer material is attached to rotate the holder outside the party descends into the chemical solution of the working party, rotates to define nimi speeds in a chemical solution around the circumference and at the same time around its axis, that allows you to provide the same average speed of all points of a polished surface of the plate and leads to a uniform interaction between the silicon plate and a chemical solution that provides a uniform polishing effect and, accordingly, ensures uniformity of the polished material. This plate allows you to provide a clean surface polished material during removal of the reaction products. This is due to the fact that after the reaction the deleted products are directly transferred from the working surface down into the solution, and the surface remains clean, which leads to the decrease of defects in the process of chemical-dynamic polishing.

The process control is performed by controlling the rotation speed of a silicon wafer in a chemical solution circumferentially around its axis, which allows to provide the same average speed of all points of a polished surface of a wafer in a chemical solution and leads to a uniform mechanical friction between the silicon plate and a chemical solution that provides a uniform polishing effect and, accordingly, ensures uniformity of the polished material.

For holding and rotating a silicon wafer in a chemical solution does not require complex adaptations, and this pic is b easily implemented.

Brief description of drawings

Figure 1, figure 2:

The speed of movement of the plate along the circle of radius R figure VOCD. The speed of rotation around its axis VBP. The average speed of each point of the plate Vcp.

Point A: Vcp.=(V1+V2+V3+V4)/4

For a point Q: Vcp.=(V1+V2+V3+V4)/4

For a point With: Vcp.=(V1+V2+V3+V4)/4

Point D: Vcp.=(V1+V2+V3+V4)/4

If R=2Dpl.then Vthe OCR.=4VBP.where Dpl.the diameter of the polished plate.

Figure 3. - General view of the proposed method of chemical-dynamic Polish: 1 - tank (bath) PTFE; 2 - bore vacuum holder; 3 - a silicon wafer, a dielectric layer or a tungsten layer deposited on the silicon wafer; 4 - chemical solution for polishing.

The speed of rotation around the circumference of the Vthe OCR.The speed of rotation around its axis VBP.

Figure 4. - Irregularity over the entire surface of a silicon wafer to conduct chemical-dynamic polishing by the given method.

Figure 5. - Irregularity over the entire surface of a silicon wafer after conducting a chemical-dynamic polishing by the given method.

An example of carrying out the invention

Developed pic is b chemical-dynamic polishing of silicon wafers in the environment of the chemical solution. This method is the uniform rotation of the silicon wafer in a chemical solution in the tank PTFE filled with a chemical solution, in which the entire silicon wafer placed, secured with Teflon vacuum holder is lowered into the solution outside surface to the holder, working towards a solution, driven in rotation by means of the actuator (figure 3).

Example 1. A silicon wafer is rotated in the environment of the chemical solution on a circle with a speed of 400 rpm, around its axis - 100 Rev/min, which allows us to provide the same average speed of all points of a polished surface of a wafer in a chemical solution and leads to a uniform interaction between the silicon plate and a chemical solution that provides a uniform polishing effect and, accordingly, ensures uniformity of the polished material. Polishing occurs in a mixture of nitric, hydrofluoric and acetic acids with a ratio of HNO3:HF:CH3COOH=14:3:3 and 40:1:1 for silicon. The process is performed at room temperature (20°C). The non-uniformity across the surface of a silicon wafer with a diameter of 100 mm to polishing is 0.9 μm (figure 4), after polishing - 0.2 μm (figure 5).

Example 2. A silicon wafer with a film of silicon oxide is rotated in the environment chemical races of the thief on the circumference at a speed of 400 rpm, around its axis - 100 Rev/min, which allows us to provide the same average speed of all points of a polished surface of a wafer in a chemical solution and leads to a uniform interaction between the silicon plate and a chemical solution that provides a uniform polishing effect and, accordingly, ensures uniformity of the polished material. For silicon oxide composition provide the Etchant of HF:H2O=1:50. The process is performed at room temperature (20°C). Time polishing depends on the film thickness of silicon oxide. The non-uniformity across the surface of a silicon wafer with a diameter of 100 mm with a film of silicon oxide to polishing is 1 μm after polishing - 0.25 microns.

Example 3. A silicon wafer with a film of tungsten is rotated in the environment of the chemical solution on a circle with a speed of 400 rpm, around its axis - 100 Rev/min, which allows us to provide the same average speed of all points of a polished surface of a wafer in a chemical solution and leads to a uniform interaction between the silicon plate and a chemical solution that provides a uniform polishing effect and, accordingly, ensures uniformity of the polished material. For tungsten provide the Etchant composition of NaOH:K3[Fe(CN)6]:H2O=1:3,5:25. The process is performed at room temperature (20°C) Time polishing depends on the film thickness of the tungsten. The non-uniformity across the surface of a silicon wafer with a diameter of 100 mm with tungsten film before polishing is 0.5 μm after polishing - 0.15 microns.

The method of chemical-dynamic polishing plate, consisting in the room a polished plate in a chemical etching solution, wherein the polished plate is attached to the vacuum holder outside party is dipped in a chemical solution of the working party and rotate around its axis with simultaneous uniform motion in a circle.



 

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