Method of treating liquid

FIELD: chemistry.

SUBSTANCE: method of treating a liquid involves decomposition of a resin in the liquid by bringing ozone gas into contact with the liquid which contains a water-soluble carbonyl compound and resin. The method of treating a liquid also involves removal of organic acid formed during resin decomposition from the liquid by subjecting the liquid to ion exchange on an ion-exchange resin after decomposition. The ion-exchange resin contains anion-exchange resin. The liquid undergoing ion exchange contains water. The water-soluble carbonyl compound is at least one compound selected from y-butyrolactone, ethylene carbonate, ethylene acetate and glycerol acetate. Also, the liquid used for contact with ozone gas during decomposition is obtained by using a liquid containing a water-soluble carbonyl compound and water as a solvent, and removing the resin from the substrate containing resin.

EFFECT: reusing exfoliating liquid to remove resin components, using an exfoliating liquid which does not cause metal corrosion on the substrate.

11 cl, 3 dwg

 

The level of technology

The technical field to which the invention relates.

The present invention relates to a method for processing liquid, which includes a resin component is removed from the liquid used for the exfoliation of the organic resin component with the substrate surface.

Description of the prior art,

Photolithography is used in the manufacture of nozzles of the inkjet printing heads and LCD panels. In such areas, when etching is carried out on metal and insulating materials formed on the substrate, the surface or a specific node is protected with a resist consisting of an organic resin, and the resist is removed after etching. To remove the resist has a way of making the process of plasma etching using oxygen plasma. In this way, when the substrate is exposed, a metal film and an organic film with insufficient oxidation resistance, the metal film and the organic film are oxidized, which is undesirable. When the resist that is used to perform etching on the metal film and the organic film is removed using an organic solvent, such as the Stripping liquid. However, because the Stripping liquid is used repeatedly, SP is the ability of dissolution of the resist is reduced. Accordingly, the Stripping liquid, which is used for a certain period of time, should be replaced with the new solvent.

From the viewpoint of global environmental protection requires the introduction of technologies for recycling recyclorama the Stripping liquid instead of removing it. In recent years, developed a technology for recycling the Stripping liquid using gaseous ozone, which is more secure, because the gaseous ozone is again converted into oxygen by decomposition and thus gives less burden on the environment.

For example, published patent application of Japan No. 2004-241602 describes the method of processing the Stripping liquid for a resist on the surface of the substrate with ozone, exposure to its ion exchange, and then removing the organic acid, which is generated using the ozonation process.

However, you may encounter a case where the organic acid is not sufficiently decomposed in an organic solvent, and thus cannot sufficiently be removed by a process of ion exchange, thus there is interest in the metal film in the form of the substrate was dissolved by the residual organic acid, when the Stripping liquid is re-used.

Somnos the ü inventions

To solve the above problems, the present invention provides a method of processing fluid by removing the resin from the liquid used as the Stripping liquid, so that the fluid is weakly influenced films such as metal films on the substrate when the liquid is re-used as the Stripping liquid, and thus could consistently be used as the Stripping liquid.

In accordance with one aspect of the present invention, a method of processing fluid includes decomposition of the resin in the liquid, ensuring contact of gaseous ozone with the liquid containing water-soluble carbonyl compound and the resin; and removing the organic acid generated by decomposition of the resin from the liquid by exposure to liquid after decomposition, ion exchange, ion-exchange resin, where the fluid is subject to ion exchange, contains water.

In accordance with one aspect of the present invention, it is possible stable reuse the Stripping liquid to remove the resin components.

Other features of the present invention will become apparent from the following description of exemplary embodiments with reference to the accompanying drawings.

Brief description of drawings

Figure 1 pre who is a schematic view of an installation for the processing of the substrate, contains the device recycling the Stripping liquid according to one of the embodiments, when recycling the Stripping liquid in accordance with the present invention.

Figure 2 is a schematic view of the device for processing a substrate, comprising a device for recycling the Stripping liquid for the implementation of recycling the Stripping liquid according to the first comparative example.

3 is a flowchart of a method of manufacturing a substrate for an inkjet printing device using the method of recycling the Stripping liquid in accordance with the present invention.

Description of embodiments

Preferred embodiments of the present invention will now be described in detail in accordance with the attached drawings.

The authors have devised a method of recycling the Stripping liquid, capable of peeling component of organic resin on the surface of the substrate using specific Stripping liquid, and recycling the Stripping liquid, which dissolves the organic resin component, with the use of gaseous ozone, and the processing liquid, which is subjected to recycling, using ion-exchange resin, that is they way removing the organic acid and impurities that can destroy a substrate and a film on the substrate. In particular, the Stripping liquid, which detaches the component is an organic resin, is subjected to recycling using gaseous ozone to decompose the organic resin component in the Stripping liquid of low molecular weight components, and the process of ion exchange is carried out on the fluid containing the decomposed low-molecular organic acid or mixture. In particular, the workpiece during ion exchange liquid contains water. Accordingly, it is possible to reduce the concentration of organic acid or an impurity in the treated fluid, and thus, recycled Stripping fluid so that it does not cause corrosion of metal on a substrate, such as aluminum. In particular, in the method in accordance with the present invention can optimize the composition of the Stripping liquid, and a combination of ion-exchange resin in the process of ion exchange.

The method of recycling the Stripping liquid

The Stripping liquid

In this embodiment, the Stripping liquid for peeling component of organic resin on the surface of the substrate contains a water-soluble carbonyl compound and water to dissolve, adlawan the I component of the organic resin.

In addition, as described later, the Stripping liquid is subjected to a recycling using gaseous ozone after peeling component of an organic resin, so that the liquid, which are resistant to ozone and are not reactive towards ozone was used as the Stripping liquid. For the destruction of unsaturated bonds such as double bonds, oxidation of aromatic compounds with group donor electron, or for the manifestation of high sensitivity sulfides or molecules with nucleophilic atoms, such as amines, ozone decomposes such materials. In addition, when the reaction of ozone at high pH values there is a significant autolysis of ozone. However, this process can be generated very active radicals IT, which are the main components involved in oxidation reactions. For this reason, there may be a case where demonstrates strong oxidizing degradability those substances that cannot decompose during normal oxidation, which leads to the generation of heat of neutralization and the emission of smoke.

From the point of view of manipulation during the ozone process recycling and suppression of destruction layer polyetherimide on the substrate, as vodorastvorimogo the carbonyl compounds enter the water-soluble carbonyl compounds, with resistance to ozone, for example, γ-butyrolactone (formula (3)), ethylene carbonate resulting, etranzact and glycerinated. These substances can be used individually or in combinations of two or more types. In accordance with the present invention, since such water-soluble carbonyl compounds dissolved in used in the way water, carbonyl compounds, such as ethylene carbonate resulting, which are solid at room temperature, more convenient for manipulation. Moreover, the process of recycling with the use of gaseous ozone and the process of ion exchange using an ion exchange resin can easily be carried out. As water-soluble carbonyl compounds, can be used γ-butyrolactone (formula (3)), which is a liquid at room temperature, as a compound that mixes easily with water.

The Stripping liquid according to the present invention may contain water-soluble organic solvent, and water-soluble carbonyl compound and water, as long as the Stripping liquid does not adversely affect the effect of the present invention.

When considering the present invention it was found that in the case where the water-soluble Carboni is inoe compound is a γ-butyrolactone, when the amount of water contained in the Stripping liquid is equal to or more than 10% of the mass and equal to or less than 32% of the mass, the peeling component of an organic resin is recovered, and in particular, the Stripping liquid from which removes organic acid or particles that destroy the substrate is recycled properly. The amount of water contained in the Stripping liquid may be equal to or greater than 15% of the mass, and to be equal to or less than 25% of the mass.

Types of organic resin component for peeling from the surface of the substrate are not in any way limited, provided that they are soluble in the Stripping fluid and can decompose into low-molecular compounds by oxidation or decomposition reaction with ozone, and are desirable unsaturated hydrocarbons containing as the structure of the double bond or triple bond. For example, can be used resin on the basis of novolak.

Methods of exfoliation component of an organic resin on the surface of the substrate using a Stripping liquid in any way not limited, and can be used, for example, immersion in a tank or atomization spray.

Moreover, in the description, "the Stripping liquid" is a liquid used for dissolving and removing whom Ananta organic resin substrate. However, in the description of the Stripping liquid is considered as the liquid in which exfoliate from the substrate and dissolved organic resin component, i.e. liquid, in which, in the process of exfoliation, dissolved organic resin component, which is applied on a substrate of a specified number of sheets. In addition, "process liquid" is a liquid that decomposes organic resin component, when the Stripping liquid, described later, is exposed recycling using gaseous ozone. Moreover, "recycled liquid" is a liquid obtained after the process liquid is subjected to ion exchange using an ion exchange resin described later.

The process using gaseous ozone

It is assumed that gaseous ozone generates reaction with the organic resin component in the Stripping fluid, as represented by the Formula (1), and generates products such as organic acid and low molecular weight components, using the component decomposition of organic resin. In this example, believing that by dissolving and removing the resist can get a connection on the basis of phenol, in the example of the behavior of the decomposition with ozone, where the stoichiometry is ignored.

(R1, R2and R3represent an organic group).

In the example above compounds on the basis of phenol decomposed into low-molecular compounds such as benzoate and acetate.

To date has used technology with application of gaseous ozone to the process of recycling the Stripping liquid. However, in the method of aeration of gaseous oxygen in a liquid using the method of aeration used at atmospheric pressure or a pressure close to atmospheric, the solubility of oxygen in water or solvent is low and thus is a low efficiency, and there are such problems that the reactions take a long time and the processing agent is expensive. In the known solution uses a method of providing gaseous ozone under the same pressure as the pressure of the Stripping liquid, or at a higher pressure, contact with the Stripping fluid under pressure created by using a circulating pump mixer, or a method of providing contact gas-liquid using a module with a non-porous membrane. Using these methods is provided by the contact of gaseous ozone with the Stripping liquid in the form of small bubbles while maintaining the high pressure is of gaseous ozone, and thus, for the decomposition of the organic component of the resin to a sufficient degree.

The process of recycling the Stripping liquid for dissolution and peeling component of organic resin on the surface of the substrate with the use of gaseous ozone can be carried out after removal of the Stripping liquid in the other tank, from which it is used for a method of exfoliation, or it may be carried out subsequently to the Stripping liquid during the process of exfoliation.

When the tank is used, the shape of the tank are not limited in any way, and the tank may have a structure for sealing the liquid and can connect with an agitator to maintain the liquid in a homogeneous condition. With the help of sealing fluid is not allowed evaporation of components of the solvent and thus may not allow the aggregation and precipitation of a component of an organic resin. At the same time, may not allow the discharge of water or dirt into the atmosphere. In addition, if the liquid all the time mixed using a mixer, can be prevented the occurrence of non-uniformity of the liquid during the recycling process using gaseous ozone or during storage, thus, supported homogeneous condition.

In addition, for implementation of the process using OZONA further in the process of exfoliation, can be fixed moisture meter or stationary atomic absorption spectrometer as a permanent mechanism for tracking performance and the state of the Stripping fluid; however, this is not essential. In addition, the deaeration module can be installed in the circulation pipe of the ozone process for deaeration of gaseous ozone from the Stripping liquid using a pressure reduction or for deaeration of gaseous ozone with blowing nitrogen gas or inert gas into the tank, in order to return the liquid in the process of exfoliation.

Method of producing a gaseous ozone is carried out in accordance with the present invention is not limited in any way, and gaseous ozone can be generated by using a silent discharge or electrolysis. In particular, can be used ozone generator quiet type of discharge using gaseous oxygen and gaseous nitrogen as a source material for the generation of ozone, because highly concentrated gaseous ozone can be obtained quickly and easily. Although the concentration of gaseous ozone is not limited in any way, a higher concentration is more effective as a way of recycling can be carried out in a short time. In accordance with the tvii with the present invention, can be used mixed gas of oxygen gas and nitrogen gas containing ozone with a concentration in the range from 200 to 500 g/m3. More specifically, the ozone concentration may be in the range of from 300 to 450 g/m3.

As described above, as the Stripping reactor liquid and gaseous ozone, can be used in a reactor equipped with a module with a non-porous membrane reactor gas-liquid and the tank in the tank. Although the pressure of the Stripping liquid and gaseous ozone, used here, is not limited in any way, pressure can be in the range from 0.01 to 0.4 MPa in the sensor. More specifically, the pressure may be in the range from 0.05 to 0.3 MPa in the sensor. In addition, circulating pipeline Stripping liquid can be installed module for deaeration deaeration unreacted gaseous ozone.

In addition, you can use the node filter set for filtering fluid within the ozone process of circulating pipe for the fluid in order to remove the solid products with resistance to ozone contained in the Stripping liquid. Accordingly, the residual solid products that are not decomposed with ozone process can be removed, preventing, thus, appearance is their solid products of the substrate, remaining in the processing liquid. In addition, the material of the host filtering not somehow limited, because the material is resistant to the Stripping liquid. However, the Assembly can be used on the filter is made of a silicone elastomer that is resistant to many organic solvents, and more specifically, the Assembly can be used on the filter is made of hydrophilic silicone elastomer.

In addition, to prevent unnecessary treatment with gaseous ozone, the above absorption spectrometer can be used for continuous measurement of the absorption coefficient of the fluid, so that the method using gaseous ozone could be as long as the component is an organic resin that absorbs a specific wavelength, does not reach absorption corresponding to sufficiently decomposed state.

After the recycling process fluid with ozone can be made direct contact with the ion-exchange resin, using a switching valve installed in the pipeline, or can be made contact with the ion exchange resin after deactivate ozone dissolved in the fluid using the storage technology of liquids and in another tank within the required time. Although the form of this other tank is not limited in any way, can be used in a tank provided with a hole for gas outlet and a stirrer to maintain the fluid in a homogeneous condition. For this reason, the deaeration of gaseous ozone can be accelerated by using a gas outlet in order to avoid the entry of water or dirt into the processing fluid. In addition, the occurrence of irregularities in the process liquid during storage can be avoided by mixing the fluid with a stirrer, supporting, thus, homogeneous condition.

The process is carried out using ion-exchange resin

Further, it provides a contact of organic acids in the process liquid with ion exchange resins, and such products as organic acid generated by decomposition of the organic resin component adsorbed in the ion-exchange resin, so that they are removed from the fluid through the reaction, which is described by the following Formula (2)

(R4-N·OH represents an anion exchange resin).

Ion-exchange unit used in the method in accordance with the present invention, is not limited, and can be used ion exchange type electric re is enerali or type electrical deionization reverse polarization using a membrane of ion exchange resin, and column type, in which the column is filled granular ion exchange resin. In particular, as a rule, used a column type using a granular ion-exchange resin. As the ion exchange resin may be any of a mixed ion exchange resin, anion exchange resin and cation exchange resin. As the ion exchange resin includes, for example, styrene type resin gel. As the anion exchange resin include, for example, acrylic type resin gel. As a mixed cation-exchange resin include, for example, acrylic resin porous type. They can be used individually, or two or more types of ion-exchange resin may be combined for use.

In accordance with the present invention, from the viewpoint of the need to remove components of the acid generated by the reaction of ozone, as described by Formula (1)may be used, at least, anion-exchange resin. Anion-exchange resin can be used alone or may have a mixed ion-exchange resin obtained by mixing anion exchange resin with a cation exchange resin in arbitrary proportions. Otherwise, more preferably, in accordance with the number of ions in the fluid after the initial exposure process W is drasti ion exchange with anion exchange resin, the process liquid can be subjected to ion exchange using a mixed ion-exchange resin. In the case where the cationic impurities such as metal ions, to remove them can be used cation exchange resin. In this way, when the Stripping liquid water is present, the Department of H+from carboxyl group is accelerating, with the receipt of carboxylic anions, resulting in improved efficiency of ion exchange.

In accordance with the present invention, from the viewpoint of improving the efficiency of ion exchange, additional Stripping liquid, water may be added after the process using gaseous ozone and to a process using ion exchange resins.

The basic structure of the ion-exchange resin may be a styrene or acrylic and can be applied to the gel of any type of porous type and highly porous type, and the type of gel can be used from the point of view of the implementation of the manipulation. In addition, the anion exchange resin can be strong or weakly basic, and therefore the formation of its functional groups and the ions are not confined in any way. In addition, the cation exchange resin may be a strong acid or weak acid, and the formation of its functional groups and the ions are therefore not limited in any way. In updat the Addendum to this, the mixing ratio for the mixed ion-exchange resin between the cation resin and anion resin in any way not limited, and can appropriately be selected in accordance with the embodiment for the effective implementation of ion exchange.

In accordance with the present invention, as the ion exchange resin can be used ion-exchange resin, in which the relative absorption of the Stripping fluid at a wavelength of 270 nm before and after immersion, increases in 1 time or more and 3 times or less, when the ion-exchange resin is immersed in the Stripping liquid. The ion-exchange resin has a resistance against the used Stripping liquid, and aliremove amount of impurities is small, is skipped when the process liquid to the implementation of ion exchange, thus, prevents the accumulation of impurities. This is an effective path from the point of view of reducing loads by using pre-treatment ion-exchange resin. More specifically, the relative increase in time of absorption can be 1 time or more and 1.5 times or less.

The contact between the ion exchange resin and process fluid may be possible by passing the process fluid through a column filled with ion exchange resin, or by using injection the of ion-exchange resin in the tank for storing the boot type. When you use boot type, after removing the ion exchange resin from the process liquid through the secondary node filtering, recycled liquid is returned to the process of exfoliation of the resist. The end point of the process of ion exchange can be determined using either the check returns whether the recycled liquid in the neutral range or not, using a pH meter or suitable way, including titration, or by check, reaches if the conductivity of the recycled fluid specified value.

In addition, the ion-exchange resin used for ion exchange, can be discharged after use, should be replaced each time. However, from the point of view of operating costs and impact on the environment, the ion-exchange resin can be processed for recycling to be used multiple times. Through the implementation of additional recycling process on the ion-exchange resin, in which the products adsorbed after decomposition of the organic acids, it is the possibility of ion exchange is restored. Accordingly, when you use, you can leave the products obtained by the decomposition using gaseous ozone or particles obtained in the process of recycling, t is thus, get recycled to the Stripping fluid with a low concentration of impurities in the liquid. When the resin component decomposed using gaseous ozone, created many types of unknown organic acids. Because these acids vary in characteristics such as melting point, they can not effectively be removed using distillation. In accordance with the present invention, such undescribed organic acids can be removed by ion exchange together, effectively recyclery thus, the Stripping liquid.

Device recycling the Stripping liquid

Will be described one example of a device for recycling the Stripping liquid in accordance with the present invention and the method of recycling the Stripping fluid using device recycling, however, the invention is not limited to this only.

Figure 1 illustrates an example device for processing a substrate containing device recycling And the Stripping fluid in accordance with the present invention. The processing device shown in figure 1, contains, as a means for peeling the organic resin component from the surface of the substrate with a Stripping fluid tank exfoliation 1, which is filled with the Stripping fluid immersed the I of the substrate. New Stripping liquid is pumped into the tank of exfoliation 1 by mixing a water-soluble carbonyl compounds with water in the mixing device (not shown) to a fixed proportion. Device recycling And the Stripping fluid contains device of ozone treatment and ion exchange device. The ozone treatment device for processing the Stripping liquid to the decomposition of the organic resin component in the Stripping fluid through the use of gaseous ozone, so that it was used as the process liquid, includes a reactor gas-liquid 5 to ensure contact the Stripping liquid with gaseous ozone and the ozone generator 13 for generating gaseous ozone. In addition, the ion-exchange treatment plant process fluid using ion-exchange resins for use as recycled liquid contains columns 10 and 11, which are filled with ion exchange resin for ion exchange by passing through them the process liquid. Further, in this document, will be described an example of a process performed on the substrate using the processing device substrate, illustrated in figure 1, and method of recycling the Stripping liquid is.

First, the Stripping liquid according to the present invention is introduced into a tank of exfoliation 1, illustrated in figure 1. The substrate having the organic resin component on the surface, is immersed in the Stripping liquid, which fills the tank of exfoliation 1, and applied ultrasonic waves, which, if necessary, decompose and prepare the chin organic resin component.

All of the Stripping liquid, which dissolves and exfoliates component of an organic resin, is removed by means of extraction pump 2 from the tank exfoliation 1 to collect in the tank for the storage 3. Further, the Stripping liquid is supplied to the reactor gas-liquid 5 through the circulation pump 4, is attached to the tank for storage 3. The Stripping liquid is discharged from the reactor gas-liquid 5 and is returned to a tank for storage of 3 for circulation.

After the pressure circulating the Stripping liquid at the reactor outlet gas-liquid 5 reaches the set pressure, gaseous ozone is generated using an ozone generator 13, and gaseous ozone is sent to the reactor gas-liquid 5 to ensure contact with the Stripping liquid in it, thus is in the process of recycling by using gaseous ozone. The deaeration module 14 is installed in the circulation pipe for which eaerly unreacted gaseous ozone from the process liquid with the to avoid a sufficient amount of gaseous ozone in the tank for storage. In addition, during the process with gaseous ozone, measured absorption using measuring 6A installed in the circulation pipe for measuring absorption, in order to determine the end point of the process with gaseous ozone.

After checking reaching the end point of the process with gaseous ozone, the generation of gaseous ozone stops. Further, the automatic valve 7 is installed in the circulation pipe, switches for directing the fluid into the tank for storage 8.

The process liquid is circulated through the circulation and return of the pump 9 to pass through the columns 10 and 11 is filled with ion exchange resin for ion exchange. For example, the column 10 is filled with anion-exchange resin, and the column 11 is filled with a mixed ion exchange resin. The conductivity of the treated liquid is measured by measuring the electrical conductivity installed as the probe 6b (device detection) in the tank for storage, and the point in time at which the change in the value of 0 is considered as the end point of the process of ion exchange, and thus, the recycled liquid.

In addition, a fragment of a circulating device processing the substrate in accordance with the present invention is constructed with a pump and guides and recirculating piping.

Further, following the Stripping liquid is removed by means of extraction pump 2 from the tank exfoliation 1, and automatic valve 12 is switched to the direction of recycled liquid in the tank exfoliation 1 for re-use as the Stripping liquid. Recycled liquid to be processed for recycling, as described above, has the same features of exfoliation, as the Stripping liquid before it was used for exfoliation of the organic resin component.

Recycled liquid can be directly re-used as the Stripping liquid. Otherwise, water or other components can be re-subjected to determination of their parameters, so that when you use or recycling of the liquid can be mixed with the newly injected into the Stripping liquid for use.

A method of manufacturing a substrate for an inkjet printer

A method of manufacturing a substrate for an inkjet printer in accordance with the present invention is not limited in any way insofar as the Stripping liquid, the use of which has been created for exfoliation component of an organic resin on the substrate surface, recycled using the recycling method in accordance with the present invention and re-used in this way. Here, the organic resin component is a mask of the resist that remains after the photolithography method, carried out with the use of resist.

One example of a method of manufacturing a substrate for an inkjet printer in accordance with the present invention will be described with reference to Figure 3. First is prepared a silicon substrate, designed to contour to release the paint (SI). Then, to improve the adhesion between the substrate and the resin used for forming the outlet to release the paint and forming a blocking layer to protect the circuit from paint, polyetherimide applied as a coating, obtained by centrifugation, or as a coating applied using a roller (S2). Then, to obtain patterns polyetherimide resin without photosensitivity using photolithography, a resist is applied a positive type or a negative type resist with photosensitivity (S3). Using these resists as photomasks, are exposed to receive and manifestation of a structure, and further etching polyetherimide (S4), get the desired structure. Then, removal of the resist, which is oil as an etching mask, the silicon substrate is immersed in the Stripping liquid for peeling all resist on the substrate (S6). The process using Altanbulag is carried out, as described above, in the Stripping liquid, which dissolves the resist (S101). Then is the process of ion exchange on the Stripping liquid after the process using Altanbulag (S102). On the other hand, the organic film is applied on the silicon substrate for forming an output to release the paint (S7), and repeats the formation of patterns using photolithography, forming, thus, a nozzle for releasing the ink on the substrate (S8). The processes from S1 to S8 and the processes of S101 and S102 may be performed sequentially or may be performed simultaneously.

Examples

Further, in this document, embodiments of the present invention will be described with reference to the accompanying drawings. The invention is not limited to the described examples, as follows, without deviation from the spirit and scope of the present invention. Similarly, the terms "part","%","%" in the description represents the mass fraction, if not specifically defined otherwise.

ASSESSMENT

Performance of exfoliation

The silicon substrate is immersed in the recycled liquid, and measured the time from the beginning oslavany the organic resin component until when the connection is fully exfoliate.

Assessment silicon substrate

Measured the thickness of the aluminum film on the surface of the substrate before and after peeling component of an organic resin with recycled liquid after processing 5000 sheets and recycling. Evaluation criteria are shown as follows.

A: the change in thickness equal to or less than 0.02 mm

In: the change in thickness equal to or less than 0.02 mm

and equal to or less than 0.05 μm

With: the change in thickness of more than 0.05 microns

In addition, for each silicon wafer treated with recyclorama fluid after processing 5000 sheets and recycling, chips, obtained on the surface of the substrate, examined appropriately using a metallographic microscope, and when it encounters a foreign substance or deformation, the output is considered to be inadequate. Evaluation criteria are shown as follows.

A: the output is equal to or greater than 90%

In: the output is equal to or greater than 80% and less than 90%

With: output less than 80%

Evaluation of head inkjet printer

Head inkjet printer is made of chips of each silicon wafer treated recycled liquid after the treatment and recycling of 5000 sheets, and printed matter, in fact, NAPA is atanna using the printer, examined with the naked eye. Evaluation criteria are shown as follows.

A: there is no deviation in print production

Q: there is no point of no release or deviation from predetermined direction

With: there are two or more points to the absence of release or deviation from predetermined direction

Measurements of absorption before and after immersion ion exchange resin

20 parts of ion-exchange resin used in the invention, immersed in 100 parts of the Stripping liquid, the Stripping and absorption liquid at a wavelength of 270 nm before and after immersion was measured using an absorption spectrometer "U-3310 (trademark name, produced by Hitachi High-Technologies Corporation).

Example 1

First, the Stripping fluid (mentioned later in this document as GBL80) is created by mixing 20 parts water 80 parts of γ-butyrolactone (GBL) and sufficiently stirred and mixed in order to enter it into the tank of exfoliation 1, shown in figure 1.

In addition, as the organic resin component for peeling from the surface of the substrate, the positive resist "OFPR-800" on the basis of novolak (trademark name, produced Tokyo Ohka Kogyo Co., Ltd.) glides on polyetheramine film silicon substrate by centrifugal device is La distribution. Further, after pre-curing, carry out the exposure using the installation alignment and then manifestation. Then, to remove the lower layer polyetherimide film, the silicon substrate is introduced into an oxygen plasma device for plasma etching and left in an oxygen plasma for 12 minutes for plasma etching polyetherimide. Further, the silicon substrate is immersed in a full GBL80 tank exfoliation at a temperature of from 1 to 25 degrees for 5 minutes, the residual resist is removed by exposure to ultrasonic waves, and this fluid is considered as recycled Stripping liquid. Moreover, as polyetheramine film, an aluminum film is present on the surface of a silicon substrate.

After peeling the set number of sheets of all the number of the Stripping liquid is removed using extraction pump 2 from the tank exfoliation 1 to collect in the tank for the storage 3 and mixing using a stirrer installed in the tank for the storage of 3, to maintain uniformity. Further, the Stripping liquid is introduced into the reactor the gas-liquid 5 through the circulation pump 4 connected to the tank for storage 3. The Stripping fluid is released from the reactor gas-liquid 5, is returned to the tank for storage 3 for circulation. Then, after the pressure of circulating the Stripping liquid at the reactor outlet gas-liquid 5 reaches 0.2 MPa in gauge, gaseous ozone is generated using an ozone generator 13 "SGVP-440" (trade mark, produced Sumitomo Precision Products Co., Ltd.) for directions to the reactor gas-liquid 5. Ensures the contact of the ozone with the Stripping liquid for the implementation of the recycling method using gaseous ozone. Moreover, the deaeration module 14 is installed in the circulation pipe for deaeration unreacted gaseous ozone from the process liquid and in order to avoid filling with gaseous ozone tank for the storage 3. In addition, during the process of recycling, the measure of the concentration type light transmission "ModelAFl2 sensor" and "Model612 indicator" (trade mark, produced Wedgewood) are set as the measuring device 6 for measuring the absorption at a wavelength of 400 nm.

The generation of gaseous ozone is stopped at the time when the absorption at 400 nm, measured by means of operations is equal to or less than 0.5 Abs. Further, the automatic valve 7 is installed in the circulation pipe, switches for directing the fluid in a tank for storing 8 so that the Stripping liquid was mixed until smooth with the help of mesh is Ki, installed in the tank for the storage of 8.

In addition, as the ion exchange resin used is a mixed ion exchange resin of the gel type "Americ ESG-2" (trade mark, produced Organo Corporation). When measuring the absorption of ion-exchange resins peak value is not displayed at the wavelength of 270 nm after immersion, and the relative increase of absorption before and after immersion is 1.2 times.

The ion-exchange resin fills the column 10 and is circulated through the column with the circulation and return of the pump 9 for carrying out the process of ion exchange. The electrical conductivity of a fluid is measured by measuring the electrical conductivity, established as the probe 6 in the tank for the storage 8, the point in time at which the change in the value becomes equal to 0 indicates the end point of the process of ion exchange, and this liquid is used as the recycled liquid. Also continuously measuring the concentration of the components of the fluid in the near-IR region of the spectrum to measure the amount of water "RD-300" (trademark, made KURABO Industries Ltd.).

Further, following the Stripping liquid is removed from tank exfoliation 1 using extracts of the pump 2, and an automatic valve 12 is switched to the direction of recycled liquid in tank 1 for exfoliation re is the mainly defined as the Stripping liquid. Source Stripping liquid which is a liquid "GBL80", and the Stripping liquid, which is recycled liquid, show the same picture of exfoliation.

Example 2

The process of recycling carried out in the same manner as in Example 1, except that the liquid resist of positive type "PMER-AR900" (trade mark, manufactured Tokyo Ohka Kogyo Co., Ltd.) is used as the resist, which has to pull away from the surface of the substrate.

Example 3

The process of recycling carried out in the same manner as in Example 1, except that the peeling of the resist is performed with the use of the Stripping fluid (GBL90)containing 90 parts of γ-butyrolactone and 10 parts of water, instead of "GBL80".

Example 4

The process of recycling carried out in the same manner as in Example 1, except that the peeling of the resist is performed with the use of the Stripping fluid (GBL68)containing 68 parts of γ-butyrolactone and 32 parts of water, instead of "GBL80".

Example 5

The process of recycling carried out in the same manner as in Example 1, except that the strong-base anion-exchange resin of the gel type "Americ IRA402BLCI" (trade mark, produced Organo Corporation) is used as ion-exchange resin. Measured absorption of ion-exchange resin before and after the pursued. The peak value is not displayed at the wavelength of 270 nm after immersion, and the relative increase of absorption before and after immersion is 3.0 times.

Example 6

Weakly basic anion exchange resin of the gel type "Americ IRA67" (trade mark, produced Organo Corporation) and mixed ion-exchange resin of the gel type "Americ ESG-2" (trade mark, produced Organo Corporation) fill in columns 10 and 11 respectively as ion exchange resins. The process of recycling carried out in the same manner as in Example 1, except that the circulation is carried out using the circulation and return of the pump 9 serial passage through the anion exchange resin and a mixed ion exchange resin for ion exchange. Measured absorption anion-exchange resin before and after immersion. The peak is rarely demonstrated at a wavelength of 270 nm after immersion, and the relative increase of absorption before and after immersion is 2.5 times. Additionally, the measured absorption of ion-exchange resin before and after immersion. The peak is rarely demonstrated at a wavelength of 270 nm after immersion, and the relative increase of absorption before and after immersion is 1.2 times.

Example 7

The process of recycling is carried out in the same manner as in Example 1, except tor the, the peeling of the resist is performed using the Stripping fluid (ES)containing 80 parts of ethylene carbonate resulting in 20 parts of water, instead of "GBL80".

Comparative example 1

The process of recycling carried out in the same manner as in Example 1, except that there is no process of ion exchange using an ion exchange resin after the implementation of the recycling process using gaseous ozone using device recycling In columns 10 and 11 and the automatic valve 12, as shown in figure 2. When processed 500 sheets of a silicon substrate, a decrease in the thickness of the aluminum film on the substrate.

Example 8

The process of recycling carried out in the same manner as in Example 1, except that carry out levelling delamination using the Stripping fluid (GBL92)containing 92 parts of γ-butyrolactone and 8 parts of water, instead of "GLB80". Demonstrates that some point where the thickness polyetherimide film, which is a lower layer resist, slightly reduced after the detachment of the resist; however, this does not affect the manufacture of the head.

Example 9

The process of recycling carried out in the same manner as in Example 1, except that the peeling of the resist is performed using the Stripping fluid (GBL65)containing 65 parts of the γ-butyrolactone and 35 parts of water, instead of "GBL80". Since the resist delamination from the substrate, the time of exfoliation small. However, there is the case where the resist is present in the Stripping liquid in the solid state, so that the time spent on the process of recycling by using gaseous ozone, more in comparison with examples 1-6.

Example 10

The process of recycling carried out in the same manner as in Example 1, except that the highly porous type weakly basic anion-exchange resin "DIAION WA-30" (trade mark, manufactured by Mitsubishi Chemical Corporation) is used as ion-exchange resin. Measured absorption of ion-exchange resin before and after immersion. The peak value is demonstrated at a wavelength of 270 nm after immersion, and the relative absorption is increased 10 times before and after the dive. In addition, there is a discoloration of the resin after immersion. The process of recycling carried out on the Stripping liquid using ion-exchange resin. When handling 500-sheet silicon substrate there were no problems. However, after processing 2500 sheets on the substrate has a balance.

Example 11

The process of recycling carried out in the same manner as in Example 1 except that the porous type weakly basic anion-exchange resin "Americ IRA96SB" (trade mark, produced Organo Corporation) is used as the e ion-exchange resin. Measured absorption of ion-exchange resin before and after immersion. The peak value is demonstrated at a wavelength of 270 nm after immersion, and the relative absorption after immersion increased 3.5 times. The process of recycling the Stripping liquid is carried out using ion-exchange resin. Processing 2500 sheets silicon substrate does not cause problems; however, when processing 5000 sheets on the substrate has a balance.

The results of the various assessments of recycled liquids obtained in Examples 1-11 and Comparative example 1 are shown in table 1.

Although the present invention has been described with references to exemplary embodiments of, you must understand that the invention is not limited to the described exemplary embodiments of the implementation. The scope of the following further claims must meet extended its interpretation so that it covered all these modifications and equivalent structures and functions.

1. The method of processing fluid, comprising: a biodegradable resin in a liquid by providing contact of gaseous ozone with the liquid containing water-soluble carbonyl compound and a resin; and
the removal of organic acid generated by decomposition of the resin from the liquid by exposure to liquid after Razlog the of ion exchange, ion-exchange resin,
where the fluid is subject to ion exchange, contains water.

2. The processing method according to claim 1, in which the water-soluble carbonyl compound is at least one selected from γ-butyrolactone, ethylene carbonate resulting, etiennette and glycerophosphate.

3. The processing method according to claim 1, in which the ion-exchange resin includes anion exchange resin.

4. The processing method according to claim 1, in which the water-soluble carbonyl compound is a γ-butyrolactone.

5. The processing method of claim 1, wherein when removing the first liquid is subjected to ion exchange using anion-exchange resin, and the liquid is then subjected to ion exchange using a mixed ion-exchange resin.

6. The processing method according to claim 1, in which, when performing the decomposition, the liquid contains water.

7. The processing method according to claim 1, in which, after decomposition, water is added to the liquid, which is then subjected to ion exchange.

8. The processing method according to claim 1, in which the liquid that decomposition is used to contact with gaseous ozone, receive through the use of a liquid containing water-soluble carbonyl compound, the solvent, and removing the resin from the substrate with resin.

9. The processing method according to claim 1, in which the liquid, which is used to contact g is soobrazim ozone decomposition, receive by using a liquid containing water-soluble carbonyl compound and water as a solvent, and removing the resin from the substrate with resin.

10. The processing method according to claim 1, in which the resin is removed from the substrate, coated with resin, using a liquid containing water-soluble carbonyl compound, which is obtained at the stage of removal.

11. The processing method according to claim 9, in which the water-soluble carbonyl compound is a γ-butyrolactone, and the liquid contains water in a proportion equal to or greater than 10 wt.% and equal to or less than 32 wt.% in relation to the weight of fluid.



 

Same patents:

FIELD: physics.

SUBSTANCE: method of producing a silicon film on a substrate surface by vapour deposition, starting from a silicon-based precursor, characterised by that the precursor used is silicon tetrachloride. The coated substrate is cleaned or textured, then diffused out of the vapour phase or another dopant source at temperature from 800 to 1000°C; a glass layer formed during diffusion is removed; a thin antireflection coating is deposited on the electronically active silicon film, and then metal contacts are alloyed in on the front and back surfaces of the coated substrate by screen printing using temperature step.

EFFECT: reduced fire hazard of the process, as well as cost owing to simpler safety measures.

18 cl

FIELD: instrument making.

SUBSTANCE: manufacturing method of deep-shaped silicon structures involves creation of protective layer on silicon plate; formation in it by means of in-series photolithography and etching operations the structure of the specified shape till silicon appears in the area of its maximum depth, and then silicon and the rest protective layer is etched till the specified shape is obtained. According to the invention, after creation of protective layer and prior to the first photolithography operation, along the protective layer surface there created is contrast layer from the material differing from protective layer material, and after each photolithography operation prior to etching of protective layer there etched is contrast layer.

EFFECT: improving manufacturing accuracy of deep-shaped silicon structures.

10 dwg

FIELD: power industry.

SUBSTANCE: manufacturing method of nanowires, which involves the formation stage on the substrate of mask for selective growth, which contains a group of holes located in certain order and opening a group of substrate sections; stage of selective non-pulse growth, in which in each of the above sections there grown through the above holes are cores of nanowires by using the growth mode including simultaneous supply of initial gaseous substances forming cores of nanowires, to crystal growth reactor (non-pulse mode), switching stage in which after formation of nanowire cores with the specified characteristics there switched is growth mode from non-pulse mode to the mode at which there performed is alternate supply of initial gaseous substances forming threadlike part of nanowires, to crystal growth reactor (pulse mode), and stage of pulse growth, at which there continued is growth of threadlike parts of nanowires in pulse mode with formation of multiple semiconductor nanowires.

EFFECT: obtaining high-quality nanowires and instruments on their base.

25 cl, 21 dwg

FIELD: measurement equipment.

SUBSTANCE: invention refers to measurement equipment and can be used for example in microgyrometres, microaccelerometres, and pressure microsensors. At that, protective housing is formed with the wall made from electrical insulating material and forming a closed chamber. The above wall has inner surface oriented inward the chamber and outer surface being in contact with environment. Internal electric contacts located on inner surfaces and external electric contacts located on outer surfaces are electrically connected in pairs to each other. The first surface of flat electromechanical microsystem is fixed on internal wall of housing, and the other one includes electrical contacts of this microsystem. The first end of wire connection made from conductive material is fixed on electric contact of microsystem. Intermediate translator is made from electric insulating material, fixed at least on internal wall and contains the tracks made from conductive material; at that, one such electroconductive track is electrically connected at least to one internal electric contact and to the other end of wire connection.

EFFECT: higher reliability, which is provided owing to using the intermediate wiring translator in protective housing of electromechanical microsystem.

10 cl, 4 dwg

FIELD: electricity.

SUBSTANCE: method to manufacture multi-level interconnections of integral microcircuit chips with air gaps includes formation of the first conducting and first dielectric layers on the substrate, formation of holes in the first dielectric layer, formation of vertical conductors, by means of gas-cycle deposition of the second conducting layer, which covers its surface and fills holes, and removal of this layer from the surface of the first dielectric layer by chemical and mechanical polishing, etch removal of a part of the first dielectric layer selectively to the material of the second conducting layer, formation of a mask with a pattern of horizontal conductors, local etching of the first dielectric and first conducting layers, removal of the mask, as a result of which horizontal conductors are formed, coated with a non-etch-removed part of the first dielectric layer and separated with gaps, non-conformal deposition of the second dielectric layer with formation of closed air gaps. Then chemical and mechanical polishing of the second dielectric layer is carried put until the surface of vertical conductors opens, afterwards the cycle of formation of the next level of conductors is repeated, and a passivation cycle is formed.

EFFECT: reduced time of signals propagation delay, higher reliability and yield of good items, expanded technological capabilities of manufacturing.

6 cl, 9 dwg, 1 tbl

FIELD: electricity.

SUBSTANCE: when making a flange of a body of a powerful SHF transistor from a pseudoalloy of copper-molybdenum during cutting the flanges are aligned relative to the direction of pseudoalloy MD-40 sheet rolling so that the long side of the flange is parallel to direction of rolling. As a result of anisotropy the coefficient of thermal linear expansion along the flange is within the range of 7.6÷8.4×10-6 1/°C, which corresponds to the coefficient of thermal linear expansion of beryllium ceramics 7.6×10-6 1/°C, which is soldered over the flange. The coefficient of thermal linear expansion across the flange makes 9.1÷9.9×10-6 1/°C. Since the length of the flange considerably exceeds its width, the non-compliance of the coefficient of thermal linear expansion of the pseudoalloy and ceramics is concentrated exclusively on small transverse dimensions, as a result of which the bending of flanges in process of bodies soldering and operation of transistors is not available.

EFFECT: elimination of bending in flanges made from the pseudoalloy of copper and molybdenum, which occurs in process of bodies soldering with high-temperature solder; provision of contact in the whole area of flanges with heat removal for increase of power parameters and reliability of transistors.

3 dwg, 1 tbl

FIELD: electricity.

SUBSTANCE: in the method to manufacture GaAs field transistors with a self-aligned gate of submicron length a channel of n-type conductivity is made by means of ion alloying of semi-insulating substrates of gallium arsenide with single-charge ions of silicon, four layers of silicon oxide are deposited, being different in composition, with various speed of liquid etching, at the same time the layers with higher and lower speed of liquid etching are alternated, a multi-layer dielectric mock-up of the gate is formed by reactive-ion etching of dielectric layers so that a part of thickness of the first layer of dielectric remains on the surface, afterwards the column is etched with simultaneous removal of the remained part of the first layer, and the following procedures are carried out: ion alloying of contact areas of source and drain with the help of two inclined implantations using the mock-up of the gate as a self-aligning element, high-temperature activation annealing, planarisation of the surface by a photoresist, reactive ion etching of the photoresist, replacement of the multilayer dielectric mock-up for the metal gate, and ohmic contacts are made.

EFFECT: increased voltages of gate-drain breakthrough due to formation of a structure with low-alloyed drain and source, reduced defectiveness brought into the near-surface layer of the channel, development of the possibility to form the electrode of larger height gate due to production of the optimal profile of the dielectric gate mock-up.

4 cl, 12 dwg

FIELD: electricity.

SUBSTANCE: method of local plasma-chemical etching of material includes arrangement of material between two electrodes and formation of an electric gas discharge in the gap between the first electrode and a material surface that faces it and is arranged on the second electrode, by application of electric potentials difference to the electrodes. Etching is carried out at gas pressure, which is higher than its maximum value of those possible, for this distance between sunk elements of the first electrode surface and the treated surface, at which the discharge is not ignited, but lower than its minimum value of those possible for this distance between the protruding elements of the first electrode surface and the surface of material, at which the discharge is ignited at protruding elements of the first electrode surface.

EFFECT: increased resolving capacity of local etching.

2 cl, 1 dwg

FIELD: electricity.

SUBSTANCE: in the method to manufacture Cu-Ge ohmic contact on the surface of the plate n-GaAs or epitaxial heterostructure GaAs with n-layer a resistive mask is developed, fims of Ge and Cu are deposited, the first thermal treatment is carried out in the atmosphere of atomic hydrogen at the temperature from 20 to 150°C and density of hydrogen atoms flow to the surface of the plate equal to 1013-1016 at.cm-2 s-1. Plates are withdrawn from a vacuum chamber of a spraying plant, the resistive mask is removed before or after the first thermal treatment, and the second thermal treatment is carried out.

EFFECT: reduced value of the given contact resistance.

7 cl, 1 dwg

FIELD: electricity.

SUBSTANCE: method to metallise elements in products of electronic engineering includes application of a sublayer of a metallising coating on one of substrate surfaces with previously formed topology of elements in an appropriate product, and this sublayer is a system of metals with the specified thickness, providing for adhesion of the main layer of the metallising coating, formation of topology - protective photoresistive mask of the main layer of metallising coating, local application of the main layer of the metallising coating, removal of protective mask, removal of a part of the sublayer arranged outside the topology of the main layer of the metallising coating. Application of the sublayer of the metallising coating is carried out with the total thickness of 0.1-0.5 mcm, directly onto the specified sublayer additionally a technological layer is applied from an easily oxidable metal with thickness of 0.1-0.5 mcm, and formation of the metallising coating topology is carried out on the technological layer from the easily oxidable metal. Prior to local application of the main layer of the metallising coating a part of the technological layer is removed from the easily oxidable metal via the specified protective mask, and removal of the remaining part of the technological layer from the easily oxidable metal is carried out prior to removal of a part of the sublayer of the metallising coating arranged outside the topology of the main layer of the metallising coating.

EFFECT: increased quality of the metallising coating and reliability of electronic engineering products, improved electrical characteristics, increased yield of good products.

6 cl, 3 dwg, 1 tbl

FIELD: polygraphic, electronic and radiotechnical industry.

SUBSTANCE: invention proposes a polyvinyl alcohol-base oxidizing composition for removal of tanned polymeric layer that comprises the following components, wt.-%: sodium or potassium metaperiodate or sodium or potassium dihydro-ortho-periodate, 20-70; magnesium or calcium, or aluminum salt or salts, 20-70, and one or more crystalline organic acids, 5-50. Invention provides enhancing effectiveness of regeneration of net-stencil printing screens and to improve retention of oxidizing compositions. Invention is used for regeneration of netted-stencil printing screens prepared with use of photoresist materials.

EFFECT: improved and valuable properties of composition.

20 ex

FIELD: polygraphic, electronic and radiotechnical industry.

SUBSTANCE: invention proposes a polyvinyl alcohol-base oxidizing composition for removal of tanned polymeric layer that comprises the following components, wt.-%: sodium or potassium metaperiodate or sodium or potassium dihydro-ortho-periodate, 20-70; magnesium or calcium, or aluminum salt or salts, 20-70, and one or more crystalline organic acids, 5-50. Invention provides enhancing effectiveness of regeneration of net-stencil printing screens and to improve retention of oxidizing compositions. Invention is used for regeneration of netted-stencil printing screens prepared with use of photoresist materials.

EFFECT: improved and valuable properties of composition.

20 ex

FIELD: chemistry.

SUBSTANCE: method of treating a liquid involves decomposition of a resin in the liquid by bringing ozone gas into contact with the liquid which contains a water-soluble carbonyl compound and resin. The method of treating a liquid also involves removal of organic acid formed during resin decomposition from the liquid by subjecting the liquid to ion exchange on an ion-exchange resin after decomposition. The ion-exchange resin contains anion-exchange resin. The liquid undergoing ion exchange contains water. The water-soluble carbonyl compound is at least one compound selected from y-butyrolactone, ethylene carbonate, ethylene acetate and glycerol acetate. Also, the liquid used for contact with ozone gas during decomposition is obtained by using a liquid containing a water-soluble carbonyl compound and water as a solvent, and removing the resin from the substrate containing resin.

EFFECT: reusing exfoliating liquid to remove resin components, using an exfoliating liquid which does not cause metal corrosion on the substrate.

11 cl, 3 dwg

FIELD: physics.

SUBSTANCE: invention relates to semiconductor technology. Proposed method comprises removal of photoresist from at least one surface of conducting layer with the help of the mix of chemical including first material of self-optimising monolayer and chemical to remove said photoresist. Thus self-optimising monolayer is deposited on at least one surface of said conducting ply. Semiconductor material is deposited on self-optimising monolayer applied on conducting layer without ozone cleaning of conducting layer.

EFFECT: simplified method.

15 cl, 4 dwg

FIELD: electricity.

SUBSTANCE: invention is related to manufacturing method of electric devices that includes the following stages: 1) application of insulating dielectric layer consisting of one material with low and ultralow dielectric permeability to substrate surface; 2) application of positive or negative resist coating to surface of insulating dielectric layer; 3) subject of resist coating to selective impact of electromagnetic radiation or corpuscular radiation; 4) development of selective radiated resist coating in order to form a pattern in resist; 5) dry etching of insulating dielectric layer using pattern in resist as mask for formation of wire channels and/or feedthrough openings communicated with substrate surface; 6) selection of at least one polar organic solution (A) from the group consisting of diethylenetriamine, N-methyl imidazole, 3-amine-1-propanol, 5-amine-1-pentanol and dimethyl sulfoxide developing in presence of 0.06 up to 4 wt % of dissolved hydroxide tetramethylammonium (B), which mass fraction is taken on the basis of full weight of the respective tested solution, permanent intensity of removal at 50°C for polymer barrier antireflecting coating with thickness of 30nm that contains chromophoric groups absorbing deep UV light; 7) provision of at least one composite for resist removal that does not contain N-alkyl pyrrolidone and hydroxylamine and hydroxylamine derivants and has dynamic shear viscosity at 50°C from 1 up to 10mPa·s measured by rotating-cylinder technique, and contains, based on the full weight of the composite, (A) from 40 up to 99.95 wt % of at least one polar organic solution selected in compliance with the process stage (6), (B) from 0.05 up to <0.5 wt % of at least one quaternary ammonium hydroxide, based on full weight of the composite, and (C) < 5 wt % of water, based on full weight of the composite; 8) removal of resist pattern and smutty residue by means of damp process using at least one composite for resist removal (7) produced in compliance with the process stage (7); and 9) filling of wire channels (5) and feedthrough openings (5) with at least one material having low electric resistance. The invention is also related to usage of this composite.

EFFECT: composite is capable of removal of positive and negative photo resists and PER in identical and the most advantageous way without damage of surface layers of wafers, relief structures of wafers and gluing material connecting thin silicon wafers with substrates.

14 cl, 3 tbl, 4 ex

FIELD: chemistry.

SUBSTANCE: invention relates to composition for photoresist removal after ionic implantation, which contains: (a) amine, (b) organic solvent A, and (c) co-solvent, where content of water in composition constitutes less than 0.5 wt % of composition; amine represents quaternary ammonium hydroxide and is present in quantity from 1 to 4 wt % of composition; organic solvent A is selected from the group, consisting of dimethylsulphoxide (DMSO), dimethylsulphone (DMSO2), 1-methyl-2-pyrrolidinone (NMP), γ-butirolactone (BLO)(GBL), ethylmethylketone, 2-pentanone, 3-pentanone, 2-hexanone and isobutylmethylketone, 1-propanol, 2-propanol, butyl alcohol, pentanol, 1-hexanol, 1-heptanol, 1-octanol, ethyldiglycol (EDG), butyldiglycol (BDG), benzyl alcohol, benzaldehyde, N,N-dimethylethanolamine, di-n-propylamine, tri-n-propylamine, isobutylamine, sec-butylamine, cyclohexylamine, methylalanine, o-toluidine, m-toluidine, o-chloroaniline, m-chloroaniline, octylamine, N,N,-diethylhydroxylamine, N,N,-dimethylformamide and their combination; co-solvent is selected from the group, consisting of isopropyl alcohols, isobutylalcohols, sec-butyl alcohols, tert-pentyl alcohols, ethyleneglycol (EG), propyleneglycol, 1,2-propanediol, 1,3-propanediol, 1,2,3-propanediol, 1-amino-2-propanol, 2-methylamino-ethanol (NMEA), N-ethyldiisopropylamine and their combination; and quantity of organic solvent A and co-solvent constitutes 84, 90-99 wt %. Claimed invention also relates to method for photoresist removal after ionic implantation.

EFFECT: obtaining water-free composition for photoresist removal after ionic implantation.

11 cl, 2 dwg, 5 tbl, 5 ex

FIELD: semiconductor engineering.

SUBSTANCE: proposed method intended for producing integrated circuits in micro, microphoto-, opto-, and nanoelectronics, as well as for manufacturing multilayer semiconductor structures such as silicon-on-silicon and silicon-on-insulator ones involves following procedures. First and second semiconductor or glass, or crystal substrates, similar or different ones, each incorporating at least one mirror-finished surface and one oriented cut, are placed in lots into separate magazines, gaps being provided between substrates to ensure easy access of chemical solutions and water to them; mirror-finished surfaces of first substrates and those of second substrates are facing opposite sides and are cleaned with chemical solutions, including those imparting water-absorbing property to them, then they are washed with deionized water. After that all magazines holding first and second substrates are joined together and first substrates are transferred to magazine holding second substrates in deionized water bath taking measures to prevent their contact with surrounding atmosphere so that mirror-finished surface of first substrate faces that of second substrate with a gap between them and oriented cuts of substrates are aligned. Then pairs of first and second substrates are alternately supplied to compression unit, substrates are placed one on top of other and compressed by applying external pressure throughout entire surface of substrate for tight void-free splicing. Pairs of first and second substrates produced in this way are placed in storage container or magazine for heat treatment. In this way tight void-free splicing of substrates can be made with aid of commercial equipment for quantity production in lots (batch treatment) in production premises of lower purity class. Direct splicing of substrates under quantity production conditions does not reduce quality of their splicing(free from air bubbles).

EFFECT: reduced cost and yield due to reduced quantity of defective substrates.

13 cl, 3 dwg, 1 tbl

FIELD: microelectronics.

SUBSTANCE: proposed method meant for use in submicron lithography and in particular in production of elements of submicron-size structures on semiconductor and other substrates to test material during early stage of its manufacture for its silylation ability includes measurement of variation rates of refractive indices of exposed and unexposed photoresist films, respectively, in the course of their silylation by means of automatic ellipsometer and use of their measurement results to calculate selectivity from formula This method provides for determining selectivity of polymeric-film near-surface silylation directly in the course of gas-phase chemical modification and for doing so at any moment, that is to test source material for silylation ability.

EFFECT: enhanced precision of silylation selectivity determination at any time moment.

1 cl, 1 dwg

FIELD: microelectronics; integrated circuit manufacture.

SUBSTANCE: manufacturing process for k integrated circuit includes installation of n components on common dielectric base having external leads. Then sealing compound is applied to components so that it covers them and spreads over surface of common dielectric base provided with external leads and is restrained thereon due to surface tension forces. Single workpiece produced in the process is divided into parts to obtain k integrated circuits. This group method for manufacturing integrated circuits makes it possible to dispense with use of special integrated-circuit package forming auxiliaries.

EFFECT: facilitated manufacture.

1 cl, 2 dwg

FIELD: metal science; protection of materials against external and corrosive attacks.

SUBSTANCE: proposed method for producing diamond-like films designed for encapsulating solar photocells to protect them against chemical, radiation, and mechanical damage includes variation of ion kinetic energy, plasma discharge current, and spatial density distribution of plasma incorporating C+, H+, N+, and Ar+ ions by acting upon ion current from radial source with electric field built up by stop-down, neutralizing, and accelerating electrodes. Spatial plasma distribution is checked for uniformity by measuring plasma current density on solar photocell surface whose temperature is maintained not to exceed 80 oC. In the process substrate holder makes complex axial movement in three directions within vacuum chamber. Diamond-like films produced in the process on solar photocell surface area over 110 cm2 are noted for uniformity, difference in their optical parameters variable within desired range is not over 5%.

EFFECT: enhanced adhesive property, microhardness, and resistance of films to corrosive attacks.

5 cl, 12 dwg, 2 tbl

FIELD: semiconductor engineering; integration of electronic materials in semiconductor, electronic, superconductor, optical, and electrical technologies.

SUBSTANCE: proposed heterostructure manufacturing process that provides for manufacturing crystal films of homogeneous thickness, 10 to 300 nm thick, on amorphous insulator, semiconductor material, and other substrates, including flexible ones, at surface roughness of film about 0.2 - 0.5 nm involves introduction of hydrogen in working wafer, chemical treatment of the latter, joining of working wafer and substrate, splicing and exfoliation of working wafer including transfer of film to heterostructure. Formed in working wafer prior to hydrogen introduction is buried interface to display layer in wafer transferred as film to heterostructure or buried interface with delta-doped layer of impurity or thin layer in the form of impurity compounds also displaying layer in working wafer is formed and transferred as film to heterostructure; upon chemical treatment working wafer and substrate are dried out, then adsorbed substances are removed from and adhesive layer applied to them, working wafer and substrate are spliced and exfoliated with film transferred to heterostructure at temperature keeping hydrogen introduced in working wafer inside its space and affording hydrogen accumulation on buried interface or on delta-doped buried interface, or in the form of impurity compounds, hydrogen being introduced in working wafer through depth greater than or of same order of magnitude as burial depth of buried interface or delta-doped buried interface, or in the form of thin layer of dope compounds.

EFFECT: improved morphology of film transferred to heterostructure.

23 cl, 4 dwg

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