Green light-emitting diode using luminophor
SUBSTANCE: described light-emitting diode (LED) contains a crystal (crystals), a conical reflector and luminophor, wherein the crystal emits in the violet spectral range, the luminophor is base on barium-strontium orthosilicate, the reflector has an optimum angle of inclination of walls and height, a polymer layer with the luminophor is deposited on the reflector, as well as on the light-emitting surface of the LED.
EFFECT: highly efficient green LED, with luminous efficacy which is higher than that of traditional green LEDs, is obtained based on the disclosed invention.
6 cl, 1 dwg
The technical field.
The proposed invention relates to optoelectronics, in particular to led technology, in particular to a powerful light-emitting diodes (LEDs) green fluorescence signal for indicating and lighting.
The level of technology.
Known DM green emission with a peak wavelength λmax=520-530 nm on the basis of p-n heterostructures in the system InGaAIN (for example types-I, I - see websitewww.optelcenter.ru).These DM are characterized by an external quantum yield of radiation µc=7-13% and light yield µv=30-50 LM/W (with the direct current of 350 mA), which is insufficient for many applications and makes the actual efficiency green led.
Described SD white light (S. Nakamura. The blue lazer diode. Springer Verl., Berlin, 1997), containing radiating crystal blue luminescence-based p-n heterostructures in the system InGaAIN, and inorganic phosphor (LF) on the basis of yttrium aluminium garnet. LF distributed in a transparent polymer, and a layer of LF is close to radiant crystal. The disadvantage of this DM is low efficiency, because a significant part of the radiation LF absorbed radiant crystal and ohmic contacts.
As prototypes can be considered 2 solutions:
- SD white light (J.K. Kim, H. Luo, E.F. Schubert et al. - Jpn. J. Appl. Phys-Express Letter 44,L 649. 2005),where LF is located remotely from the to the of Estella at a distance, greater than the transverse dimensions of the crystal. The design also includes a reflector lateral radiation of the crystal. In this case decreases the probability of a radiation LF on a semiconductor crystal with a low reflectivity that increases the effectiveness of diabetes by about 20-30%.
- SD green glow, in which infrared radiation from a p-n structure in GaAs:Si with wavelength in the maximum radiation λmax=870-950 nm is transformed into green radiation using anti-Stokes LF-based oxysulfide yttrium composition V2O2S: Yb. Er (R.M Potter/ US pat. 35292000 from 15.09.1972). However, this DM has a very low efficiency (luminous efficiency ηV≈0.1-0.2 LM/W) due to the anti-Stokes nature of the radiation conversion.
Disclosure of the invention.
Effective technical solution for creating SD green glow presented in this proposed invention, contains the following main provisions:
- proposed silicate LF-based orthosilicate barium - strontium (stoichiometric formula from Ba1,22Sr0,68Eu0.08Ce0,02.*SiO4to Ba0,08Sr1,05Eµ0,06Ce0,01*SiO4), activated ions S+and CE3+by changing the ratio of components of BA, Sr, She and Behold possible to change the wavelength LF range 508-540 nm that Zac is ativam green region of the spectrum; the optimum ratio of components BA, Sr, EU and CE in the basis of LF is in the range from 45%:50%:4,5%:0,5% to 55%:42%:2,9%:0,1%, that allows you to get a green luminescence with a wavelength in the maximum range ranges from 520 to 540 nm.
- excitation spectrum of this LF is in the range 385-450 nm, resulting in the excitation of LF have been proposed crystals violet radiation with λmax=395-405 nm on the basis of p-n heterostructures in the system InGaAIN; violet radiation is located on the edge of the visible spectrum, mostly absorbed in LF and does not affect the light emission characteristics of DM in the green region of the spectrum;
in order to reduce radiation losses and efficiency of diabetes around the crystal (crystals) has a conical reflector made of white ceramic or plastic with an angle of inclination of the walls of α=60+5-10the hail; for the surface of the reflector is coated with the layer of polymer dispersed therein silica LF; the thickness of the layer with LF 100±50 μm; the height of the reflector is equal to 2-3 transverse dimensions of the radiating crystal;
the hole of the reflector is completely filled with a transparent polymer with a flat or nearly flat surface, which is applied to the polymer layer with a thickness of 100±50 μm with distributed therein silicate LF;
- used polymer has a refractive index n≥1,5, which increases the output radiation from a crystal;,
- the angle and the receipt of DM with a flat (or nearly flat) light guiding surface is 2θ 0,5=120 deg. When using a hemispherical polymer lens can obtain the angle of radiation in the range of 20-120 degrees. Presents a technical solution allows to obtain the following results:
thanks proposed silicate LF-based orthosilicate barium-strontium, activated ions S2+and CE3+and the choice of the optimal ratio of BA, Sr, Eu and CoE at excitation LF violet radiation with λmax=395-405 nm managed to get effective green glow with λmax=Ranges from 520 to 540 nm;
- by using a given conic reflector made of white material, coated with a polymer distributed therein LF, effectively use side-violet rays of the crystal (crystals), which is converted into green radiation LF; this radiation LF almost misses radiating crystal and not absorbed in it; the white surface of the conical reflector substantially reflects downward green radiation LF, located on the reflector;
green radiation of the upper layer LF, downward, mainly falls on the inclined surface of the reflector and is substantially reflected from its surface; the upper portion of radiation incident on the crystal (crystals), does not exceed 5% and, therefore, the absorption of green radiation LF crystal slightly; violet is the first radiation of the crystal, not absorbed in the upper layer LF and reflected down converted to green radiation LF, located on the reflector.
In the above created high-performance SD green glow with a luminous efficacy of 80 lumens/watt.
The implementation of the invention.
The basic design SD green radiation shown in the drawing, where 1-radiating crystal, 2-reflector inner diameter d outer diameter D, height h and angle α walls, 3 - layer polymer with LF, 4-transparent polymer, 5 - base.
Applied radiant crystal violet radiation type SL-V-U40AC firm "SemiLEDs" size of 1.07×1,07 mm wavelength 395-405 nm and radiation power 350-370 mW at a current of 350 mA.
The conical reflector is made of white ceramic and had the following dimensions: d=1.9 mm, D=8 mm, α=56 degrees and h=2 mm
As the polymer used clear silicone type LPS-5544 company Shin Etsu with a refractive index n=1,53-1,54. As LF is used silicate LF the above composition.
Described DM type-F-I.
Received DM had the following main parameters:
The emission spectrum has a major green band with λmax=525 nm and full width at half maximum of 72 nm. There is also a small strip violet radiation with λmax=401 nm and a width of 14 nm.
The coordinates of the chromaticity of the radiation was:x=0,3-0,32, y=0,58-0,61, which corresponds to the green part of the graph of the ice 1931
Luminous flux green emission at a current of 350 mA was 80-90 LM, and the luminous efficiency was ηv=70-80 LM/W. These values are significantly higher than the "traditional" green LEDs with crystal from InGaAIN (ηvless than 50 lumens/watt). Axial force of light was 25-30 KD at an angle radiation 2θ0,5=120 degrees.
The design of the led type U-F AND where additionally used hemispherical lens 0 18 mm, the power light was 35-40 KD at an angle radiation 2θ0,5≈80 degrees and 130-140 KD at 2θ0,5≈20-30 degrees.
Thus, the proposed technical solution has allowed us to create high-performance SD green glow using LF, far exceeding in terms of luminous efficiency, and other light options "traditional" SD green glow.
1. Led green fluorescence using a phosphor containing radiating crystal (crystals) from InGaAIN, conical reflector and a phosphor that is located remotely from the crystal (crystals), characterized in that the crystal (crystals), radiates in the violet region of the spectrum, the phosphor is made on the basis of orthosilicate barium-strontium-activated ion S2+and CE3+, reflector made of white material with an angle of inclination of the walls 60+5-10° and a height equal to 2-3 cross the th size of the crystal, on the walls of the reflector is coated with the layer of transparent polymer with a thickness of 100±50 μm with distributed therein a phosphor, the hole of the reflector is completely filled with a transparent polymer with a flat or nearly flat surface, which is applied to the polymer layer with a thickness of 100±50 μm with distributed therein a phosphor.
2. Led green fluorescence using a phosphor according to claim 1, characterized in that the wavelength of the violet rays of the crystal-based p-n heterostructures InGaAIN is in the range 395-405 nm.
3. Led green fluorescence using a phosphor according to claim 1, characterized in that the optimum ratio of components BA, Sr, Eu and CE based phosphor is 45%:50%:4,5%:0,5% to 55%:42%:2,9%:0,1%, that allows you to get a green glow with λmaxin the range ranges from 520 to 540 nm.
4. Led green fluorescence using a phosphor according to claim 1, characterized in that the applied polymer has a refractive index of n>1,5.
5. Led green fluorescence using a phosphor according to claim 1, characterized in that the conical reflector is made of white ceramic and white plastic.
6. Led green fluorescence using a phosphor according to claim 1, characterized in that when using the polymer of the hemispherical lens beam angle 2θ0,5may vary in the range of 20-120°.
SUBSTANCE: light-emitting device has a light-emitting element, a red luminophor formed from a nitride luminophor, and a green luminophor formed from a halogen-silicate, in whose radiation spectrum of which there is a first peak at wavelength between 440 nm and 470 nm, a second peak at wavelength between 510 nm and 550 nm and a third peak at wavelength between 630 nm and 670 nm. The minimum relative intensity of optical radiation between the second peak wavelength and the third peak wavelength is equal to or less than 80% of the least relative intensity of optical radiation at the second and third peak wavelengths.
EFFECT: light-emitting device has high quality of colour reproduction.
7 cl, 8 ex, 11 dwg
SUBSTANCE: light-emitting device has a light-emitting element, a red luminophor formed from a nitride luminophor which emits light when excited by light emitted by the light-emitting element, a green luminophor formed from a halogen-silicate, which emits light when excited by light emitted by the light-emitting element, and an yttrium aluminium garnet (YAG) luminophor which emits light when excited by light emitted by the light-emitting element.
EFFECT: light-emitting device has high quality of colour reproduction.
7 cl, 11 ex, 14 dwg
SUBSTANCE: illumination device (1) comprises, for example, diodes LED (L1, L2, L3, L4) with separate emission spectra. Detectors D1, D2, D3, D4) can generate a vector of measurement signals (S1, S2, S3, S4) which represent light output of one active light emitter. Further, based on a linear relationship obtained during the calibration procedure, the characteristic value of the light output of that light emitter (L1, L2, L3, L4) is calculated using the measurement vector, wherein said characteristic value is based on the decomposition coefficient of an individual emission spectrum on basic functions.
EFFECT: improved method.
25 cl, 6 dwg
SUBSTANCE: light-emitting system (1), comprising a radiation source (2), capable of emitting first light with at least a first wavelength spectrum, first fluorescent material (4), capable of absorbing at least partially the first light and emit second light with a second wavelength spectrum, second fluorescent material (8) capable of absorbing at least partially the first light and emit third light with a third wavelength spectrum, in which the first (4) or the second (8) fluorescent material is a polycrystalline ceramic with density higher than 97% of the density of monocrystalline material, and the corresponding other fluorescent material is a powdered luminophor with average particle size 100 nm <d50%<50 mcm.
EFFECT: invention enables to design an illumination system which emits white light with high colour rendering index, high efficiency, clearly defined colour temperature and good illumination quality, with correlated colour temperature, and enables regulation of the correlated colour temperature of the illumination system.
16 cl, 8 dwg
SUBSTANCE: light-emitting diode lamp has an aluminium radiating housing with a power supply unit in its top part, formed by a hollow rotation body with external radial-longitudinal arms which form the outline of the lamp, fitted with internal radial-longitudinal arms with windows between them and a circular area on the butt-end of the external radial-longitudinal arms in its inner part, on which light-emitting diodes are tightly mounted. The design of the radiating housing with windows between the internal radial-longitudinal arms and guides in the top and bottom parts of the radiating housing, provides efficient convectional heat removal from powerful light-emitting diodes separated from each other by inner and outer streams. The light-emitting diode module has a light-emitting diode fitted into an optical lens and tightly joined to a printed circuit board through a flexible sealing element encircling the light-emitting diode, and the light-emitting diode is rigidly joined to a heat-removing copper plate through a hole in the printed circuit board.
EFFECT: stable light output and colour temperature over the entire service life, high light flux is ensured by a set of structural solutions of the radiating housing and compact light-emitting diode modules.
5 cl, 5 dwg
SUBSTANCE: proposed nano radiator comprises 4-6 nm-dia nucleus of noble metal surrounded by two concentric envelopments. Envelopment nearest to nucleus represents an optically neutral organic layer with thickness of about 1 nm. Second 1-3 nm-thick envelopment is made up of J-aggregates of cyanine dyes. During electron excitation of metal nucleus plasmons, the latter actively interact with J-aggregate envelopment to excite cyanine dyes (Frenkel's excitons) and radiate light in visible range. Metal nucleus electrons may be excited by both photons and electrons.
EFFECT: high quantum output of luminescence and controlled spectrum of radiation in visible range.
3 cl, 1 dwg, 1 tbl
SUBSTANCE: described light-emitting diode has an emitting crystal (crystals), a conical holder and a luminophor, where the holder is made from white material with angle of inclination to the wall equal to 60+5 -10 degrees and height equal to 2-3 times the cross dimensions of the crystal. The walls of the holder are covered by a layer of a transparent polymer in which luminophor is distributed. The cavity of the holder is completely filled with a transparent polymer with a flat (or almost flat) surface covered by a layer of polymer in which luminophor is distributed. The invention enables design of light-emitting diodes which emit white light with luminous efficacy of up to 120 lm/W.
EFFECT: high luminous efficacy.
5 cl, 1 dwg, 1 tbl
SUBSTANCE: manufacturing method of semiconductor item having composite semiconductor multi-layer film formed on semiconductor substrate, according to invention, involves the following: preparation of element including layer (1010) removed by etching, composite semiconductor multi-layer film (1020), insulating film (2010) and semiconductor substrate (2000) on composite semiconductor substrate (1000), and having the first groove (2005) which passes through semiconductor substrate and insulating film, and groove (1025) in semiconductor substrate, which is the second groove provided in composite semiconductor multi-layer film so that it is connected to the first groove, and etching agent contacts the layer removed by etching as to the first groove and the second groove, and thus, removed layer is etched to separate composite semiconductor substrate from the above element.
EFFECT: increasing yield ratio and simplifying manufacturing procedure.
28 cl, 15 dwg
FIELD: machine building.
SUBSTANCE: procedure consists in injection of gas source of nitrogen and gas source of gallium into reactor for growth of layer of gallium nitride. Also, injection of gas- the source of nitrogen and gas - the source of gallium includes injection of gas containing atoms of indium at temperature from 850 to 1000°C so, that vacant centre of surface defining a cavity formed on a grown layer of gallium nitride is united with atoms of gallium or atoms of indium for filling the cavity. Internal pressure in the reactor is from 200 to 500 mbar.
EFFECT: improved surface morphology of gallium nitride layer due to reduced amount of cavities formed on it surface; device possesses improved working characteristics.
12 cl, 12 dwg
SUBSTANCE: electroluminescent device has at least one electroluminescent light source (2) for emitting primary radiation, preferably having wavelength between 200 nm and 490 nm, and at least one light-converting element (3), lying on the beam path of the primary radiation for partial absorption of the primary radiation and emitting secondary radiation, where the dimension of the said light-converting element (3) in the direction (5) of the primary radiation is less than the average scattering length of primary radiation in the light-converting element (3).
EFFECT: invention enables design of an electroluminescent device with conversion by a luminophor, which is characterised by high attenuation coefficient of the apparatus combined with a colour temperature which is as independent from the viewing angle as possible.
10 cl, 4 dwg
FIELD: semiconductor emitting devices.
SUBSTANCE: proposed light-emitting diode based on nitride compounds of group III metals, that is aluminum, gallium, and indium (AIIIN), includes p-n junction epitaxial structure disposed on insulating substrate and incorporating n and p layers based on solid solutions of group III nitrides AlxInyGa1 - (x + y)N, (0 ≤ x ≤ 1, 0 ≤ y ≤ 1), as well as metal contact pads for n and p layers disposed on side of epitaxial layers, respectively, at level of lower epitaxial n layer and at level of upper epitaxial p layer. Projections of light-emitting diode on horizontal sectional plane, areas occupied by metal contact pad for n layer, and areas occupied by metal contact pad for p layer are disposed on sectional plane of light-emitting diode in alternating regions. Metal contact pad for n layer has portions in the form of separate fragments disposed in depressions etched in epitaxial structure down to n layer; areas occupied by mentioned fragments in projection of light-emitting diode onto horizontal sectional plane are surrounded on all sides with area occupied by metal contact pad for p layer; fragments of metal contact pad for n layer are connected by means of metal buses running over metal contact pad insulating material layer applied to portions of this contact pad over which metal buses are running.
EFFECT: enhanced output optical power and efficiency of light-emitting diode.
3 cl, 3 dwg
FIELD: devices built around diodes emitting blue and/or ultraviolet light.
SUBSTANCE: proposed light source emitting light in ultraviolet or blue light region (from 370 to 490 nm) and capable of producing high-efficiency white light affording control of luminance temperature within comprehensive range has light-emitting component that emits light in first spectral region and phosphor of group of optosilicate alkali-earth metals and that absorbs part of source light and emits light in other spectral region. Novelty is that phosphor used for the purpose is, essentially, europium activated bivalent optosilicate of alkali-earth metal of following composition: (2-x-y)SrO · x(Bau, Cav)O · (1-a-b-c-d)SiO2 ·aP2O5bAl2O3cB2O3dGeO2 : yEu2+ and/or (2-x-y)BaO · x(Sru, Cav)O · (1-a-b-c-d)SiO2 ·aP2O5bAl2O3cB2O3dGeO2 : yEu2+.
EFFECT: enhanced efficiency, enlarged luminance temperature control range.
14 cl, 10 dwg
FIELD: measurement technology.
SUBSTANCE: porous-structured semiconductor materials are modified by recognition element and exposing to electromagnetic radiation carries out photoluminescence reaction. Recognition elements that can be chosen from bio-molecular, organic and non-organic components interact with target to be subject to analysis. As a result, the modulated photoluminescence reaction arises.
EFFECT: improved sensitivity.
31 cl, 13 dwg
FIELD: structural components of semiconductor devices with at least one potential or surface barrier.
SUBSTANCE: proposed device that can be used, for instance, in railway light signals built around light-emitting diodes has one or more photodetectors and set of optical filters additionally disposed on substrate. Each photodetector has its p region connected to its respective wire lead through contact pad; wire lead is passed through substrate hole and insulated from the latter; its n region is connected to its respective wire lead by means of conductor provided with metal or metal-plated contact made in the form of ring segment, all segments being integrated into ring by means of insulating inserts. Set of optical filters having similar or different spectral filtering characteristics is formed by parts of hollow inverted truncated cone whose quantity equals that of photodetectors; all parts are integrated through insulating gaskets into single hollow inverted truncated cone. Disposed on butt-ends of hollow inverted truncated cone are dielectric rings of which upper one has inner diameter equal to that of large base of truncated cone and outer diameter, to that of substrate. Dielectric ring has holes over its circumference for electrical connection of photodetector conductors and light-emitting chips to contacts in the form of ring segments.
EFFECT: ability of checking up device emission parameters within optical range and of varying indicatrix of emission.
3 cl, 2 dwg
SUBSTANCE: device has emitting surface, recombination area, not less than one passive layer, transparent for emission with hv energy, at least one of layers is made with n-type of conductivity and at least one of said layers is positioned between recombination area and emitting surface, not less than one heat-draining surface and node for connection to outer energy source. Concentration of free carriers (n) and width of forbidden zone (E1) in aforementioned passive layer match relations: where hv and Δhv0.5 - quant energy and half-width of spectrum of emission, formed in recombination zone, respectively, eV, and ndeg - concentration of carriers, at which degeneration of conductivity zone starts, cm-3.
EFFECT: increased radiation strength, increased spectral range of source.
12 cl, 12 ex, 6 dwg
FIELD: spectral-analytical, pyrometric and thermal-vision equipment.
SUBSTANCE: emitter has electro-luminescent diode of gallium arsenide, generating primary emission in wave length range 0,8-0,9 mcm, and also poly-crystal layer of lead selenide, absorbing primary emission and secondarily emitting in wave length range 2-5 mcm, and lead selenide includes additionally: admixture, directionally changing emission maximum wave length position as well as time of increase and decrease of emission pulse, and admixture, increasing power of emission. Photo-element includes lead selenide layer on dielectric substrate with potential barrier formed therein, and includes admixtures, analogical to those added to lead selenide of emitter. Optron uses emitter and photo-elements. Concentration of addition of cadmium selenide in poly-crystal layer of emitter is 3,5-4,5 times greater, than in photo-element. Open optical channel of Optron is best made with possible filling by gas or liquid, and for optimal synchronization and compactness emitter and/or photo-element can be improved by narrowband optical interference filters.
EFFECT: higher efficiency, broader functional capabilities.
3 cl, 3 tbl, 6 dwg
FIELD: semiconductor emitting devices.
SUBSTANCE: proposed semiconductor element that can be used in light-emitting diodes built around broadband nitride elements of AIIIBV type and is characterized in ultraviolet emission range extended to 280 -200 nm has structure incorporating substrate, buffer layer made of nitride material, n contact layer made of Si doped nitride material, active layer with one or more quantum wells made of nitride material, barrier layer made of Mg doped AlXGaI-XN, and p contact layer made of Mg doped nitride material; used as nitride material for n contact layer is AlyGaI-yN in which 0.25 ≤ V ≤ 0.65; used as nitride material of active layer is AlZGaI ZN, where V - 0.08 ≤ Z ≤ V - 0.15; in barrier layer 0.3 ≤ X ≤ 1; used as nitride material in p contact layer is AlwGa1 - wN, where V ≤ W ≤ 0.7; active layer is doped with Si whose concentration is minimum 1019 cm-3; width "d" of active layer quantum wells is 1 ≤ d ≤ 4 nm; molar fraction of Al on barrier layer surface next to active layer is 0.6 to 1 and further reduces through barrier layer width to its boundary with p contact layer with gradient of 0.02 to 0.06 by 1 nm of barrier layer thickness, barrier layer width "b" ranging within 10≤ b ≤ 30 nm.
EFFECT: enlarged ultraviolet emission range of semiconductor element.
1 cl, 1 dwg, 1 tbl
FIELD: semiconductor emitting devices.
SUBSTANCE: proposed semiconductor element that can be used in light-emitting diodes built around broadband nitride elements of AIIIBV type and is characterized in ultraviolet emission range extended to 240 -300 nm has structure incorporating substrate, buffer layer made of nitride material, n contact layer made of Si doped nitride material AlXIInX2GaI-XI-X2N, active layer made of nitride material AlVIInY2GaI-YI-Y2N, and p contact layer made of Mg doped nitride material AlZIInZ2GaI-ZI-Z2N; active layer is divided into two areas; area abutting against contact layer is doped with Si and has n polarity of conductivity; other area of active layer is doped with Mg and has p polarity of conductivity; molar fraction of Al (YI) in p area of active layer is continuously and monotonously reducing between its boundary with n contact layer and boundary with p area of contact layer and is within the range of 0.1 ≤ VI ≤ 1; difference in VI values at boundaries of active-layer n area is minimum 0.04 and width of forbidden gap in active-layer p area at its boundary with active-layer n area exceeds by minimum 0.1 eV the maximal width of n area forbidden gap.
EFFECT: enlarged ultraviolet emission range, enhanced inherent emissive efficiency, simplified design of light-emitting component.
1 cl, 1 dwg, 1 tbl
FIELD: semiconductor optoelectronics; various emitters built around light-emitting diodes.
SUBSTANCE: proposed light-emitting diode has chip covered with optical component made of translucent material whose outer surface is of aspherical shape obtained due to rotation of f(x) curve constructed considering optical properties of light-emitting chip and optical component material about symmetry axis of light-emitting diode; it is light-emitting surface. Curve f(x) in coordinate system whose origin point coincides with geometric center of light-emitting chip active area has initial point A0 disposed on ordinate axis at distance corresponding to characteristic size of light-emitting diode; used as this size is desired height of optical component or its desired diameter; active area is formed by plurality of points Ai (i = 1, 2..., n). Taken as coordinates of each point are coordinates of intersection point of straight line coming from coordinate origin point at angle αini to ordinate axis and straight line coming from preceding point Ai - 1 at angle Gi to abscissa axis drawn to point Ai - 1; αini is angle of propagation of iin light beam pertaining to plurality of beams emitted by light emitting chip and chosen between angles 0 and 90 deg.; angle Gi is found from given dependence.
EFFECT: ability of shaping desired light-beam emission directivity pattern.
1 cl, 3 dwg
FIELD: semiconductor optoelectronics; various emitters built around light-emitting diodes.
SUBSTANCE: proposed light-emitting diode has light-emitting chip covered by optical component made of translucent material whose outer surface is aspherical in shape due to rotation of curve f(x) built considering optical properties of light-emitting chip and optical component material about symmetry axis of light-emitting diode. This surface emits light and f(x) curve in coordinate system whose origin coincides with geometric center of active area of light-emitting diode has initial point A0 disposed on ordinate axis at distance corresponding to characteristic size of light-emitting diode which is, essentially, optical component height or its desired diameter, and is formed by plurality of points A, (i = 1, 2... n); coordinates of intersection point of straight line drawn from coordinate origin point at angle αini to ordinate axis drawn from preceding point Ai - 1 at angle Gi to abscissa axis drawn to point Ai - 1 are taken as coordinates of each of them;; αini is angle of propagation of iin light beam pertaining to plurality of beams emitted by light-emitting chip chosen between 0 and 90 deg. Angle Gi is found from given dependence. Angle αouti is found by pre-construction of directivity pattern DPin of beam emitted by light-emitting chip. Coordinates of A points are checked by means of light-emitting diode simulator that has optical component whose outline is formed by plurality of Ai points as well as light-emitting chip whose beam directivity pattern is DPin; this chip is used as distributed light source having three-dimensional emitting area whose size and appearance correspond to those of emitting area used in light-emitting diode of light-emitting chip. Light emitting points in light-emitting chip of simulator under discussion are offset relative to origin of coordinates within its emitting area; coordinates of Ai points are checked by comparing directivity pattern DPout and directivity pattern DPsim of beam emitted by light-emitting diode simulator, both displayed in same coordinate system. When these directivity patterns coincide, coordinates of points Ai function as coordinates of points forming curve f(x); if otherwise, coordinates of points Ai are found again, and DPoutj is given as directivity pattern DPout whose points are disposed above or below the latter, respectively, depending on disposition of directivity pattern DPsim below or above directivity pattern DPout in the course of check.
EFFECT: ability of proposed light-emitting diode to shape desired directivity pattern of light beam.
1 cl, 3 dwg