Light-emitting device

FIELD: physics.

SUBSTANCE: light-emitting device has a light-emitting element, a red luminophor formed from a nitride luminophor which emits light when excited by light emitted by the light-emitting element, a green luminophor formed from a halogen-silicate, which emits light when excited by light emitted by the light-emitting element, and an yttrium aluminium garnet (YAG) luminophor which emits light when excited by light emitted by the light-emitting element.

EFFECT: light-emitting device has high quality of colour reproduction.

7 cl, 11 ex, 14 dwg

 

The technical field to which the invention relates.

The present invention relates to a light-emitting device and, in particular, to a light emitting device that includes the light-emitting element, a red phosphor, green phosphor, the phosphor YAG (yttrium aluminium garnet) and emits white light.

Prior art

To create a light-emitting device that emits white light with a warm color high intensity and high quality color, it was proposed to produce light-emitting device consisting of a blue semiconductor light emitting element, a red phosphor and a green phosphor, and the phosphor emitting light when excited by the light from the light-emitting element (link, for example, patent document JP 2007-27796 A).

Such light-emitting devices exhibit high radiation intensity in the range of reddish color and is widely used for lighting and other applications.

Disclosure of inventions

The goals of the invention

Light-emitting device, white light is used in various fields, however, the conventional light-emitting device containing a blue semiconductor light emitting element (blue led), a red phosphor and a green phosphor,as described above, may not provide the required quality colour rendering.

The light-emitting device white color are used, for example, for General lighting. The light emitting device white color according to the prior art described above, may not provide sufficient color quality due to the fact that the average color rendering index Ra 70 or less. The use of such a lighting device that has a lack of color quality, leads to the problem, consisting in the fact that the color of objects is different from the color of objects when using fluorescent lamps manufactured for General lighting.

The present invention is to provide a light-emitting device that can be used in areas that require an update.

Tools to solve problems

The first aspect of the present invention is a light-emitting device containing the light-emitting element, a red phosphor formed from a nitride phosphor that emits light when excited by the light emitted from the light-emitting element, a green phosphor formed from halogenoalkane, which emits light when excited by the light emitted from the light-emitting element and the phosphor YAG (yttrium aluminium garnet), which is not in the t light when the excitation light, the emitted light emitting element.

The second aspect of the present invention is a light-emitting device according to the first aspect, the emission spectrum has a first peak at a wavelength of from 440 nm to 470 nm, a second peak at a wavelength of from 510 nm to 550 nm and a third peak at a wavelength of from 630 nm to 670 nm, and the minimum relative intensity of the light beam between the second peak wavelength and the third peak wavelength spectrum radiation is more than 80% of the lesser of the relative intensities of the light emission in the second and the third peak wavelength.

The third aspect of the present invention is a light emitting device in accordance with the first or second aspect, the red phosphor activated Unit and represented by the following General formula (I):

and M1is at least one kind of element selected from the group consisting of Mg, Ca, Sr and Ba; and satisfied the relation: 0,056≤w≤9; x=1; 0,056≤y≤18 and 0≤z≤0.5 in.

The fourth aspect of the present invention is a light emitting device in accordance with any aspect from the first to the third, while the green phosphor represented by the following General formula (II):

and M2is, at the very measures which, one kind of element selected from the group consisting of Ca, Sr, BA, Zn and Mn; M3is at least one kind of element selected from the group consisting of Si, Ge and Sn; M4is at least one kind of element selected from the group consisting of B, Al, Ga and In; X is at least one kind of element selected from the group consisting of F, Cl, Br and I; R is at least one kind of element selected from among rare earth elements, though the Unit is contained as an essential element (or required); and satisfied the relation: 0,0001≤y≤0,3; 7,0≤a≤10,0; 3,0≤b≤5.0 and 0≤c≤1,0.

The fifth aspect of the present invention is a light emitting device in accordance with any aspect from the first to the third, while the green phosphor represented by the following General formula (III):

and M5is at least one kind of element selected from the group consisting of Ca, Sr, Ba, Zn and Mn; X is at least one kind of element selected from the group consisting of F, Cl, Br and I; and satisfied the relation: 6,5≤x≤8,0; 0,01≤y≤2,0; 3,7≤z≤4,3; 0≤w≤0,5; a=x+y+1+2z+(3/2)w-b/2-(3/2 c; 1,0≤b≤1.9 and 0≤c≤3,0.

The sixth aspect of the present invention is a light-emitting device according to the accordance with any aspect from the first to the fifth, moreover, the difference between the peak wavelength of light emitted from the light-emitting element, and the peak wavelength of light emitted by the green phosphor is 80 nm or less.

The seventh aspect of the present invention is a light emitting device in accordance with any aspect from first to sixth, while the YAG phosphor represented by the following General formula (IV):

and M6is at least one kind of element selected from the group consisting of rare earth elements; and M7is at least one kind of element selected from the group consisting of B, Al, Ga and In.

The effects of the invention

Combining the light-emitting element, a red phosphor, green phosphor, and the phosphor YAG (yttrium aluminium garnet), you can create a light-emitting device having excellent color quality.

Brief description of drawings

Figure 1 is a view in section of the light-emitting device 100 according to the present invention.

Figure 2 is a graph showing the emission spectrum of the light-emitting device 100 according to example 1.

Figure 3 is a graph showing the emission spectrum of the light-emitting device 100 according to example 2.

4 is a graph showing the emission spectrum of the light-emitting device 100 according to the about example 3.

5 is a graph showing the emission spectrum of the light-emitting device 100 according to example 4.

6 is a graph showing the emission spectrum of the light-emitting device 100 according to example 5.

Fig.7 is a graph showing the emission spectrum of the light-emitting device 100 according to example 6.

Fig is a graph showing the emission spectrum of the light-emitting device 100 according to example 7.

Fig.9 is a graph showing the emission spectrum of the light-emitting device 100 according to example 8.

Figure 10 is a graph showing the emission spectrum of the light-emitting device 100 according to example 9.

11 is a graph showing the emission spectrum of the light-emitting device 100 according to example 10.

Fig is a graph showing the emission spectrum of the light-emitting device 100 according to example 11.

Fig is a graph showing the emission spectrum of a fluorescent lamp cold cathode (CCFL).

Fig is a graph showing the emission spectrum of conventional white led.

1 Case

2 the light-Emitting element

3A Red phosphor

3B Green phosphor

3C phosphor (yttrium aluminium garnet) AIG

4 Transparent resin

5,7 electrical conductor

6, 8 External electrode

9 Reflector light

100 light Emitting device

The best way of carrying out the invention

In figure 1 depict what Avelino in the context of the light emitting device 100, which is an example of the structure of the light-emitting device according to the present invention.

The light emitting device 100 according to the present invention contains a light-emitting element (blue led) 2, the red phosphor (the phosphor emitting red light) 3A, which is excited by the light emitting element 2 to emit red light, a green phosphor (a phosphor emitting green light) 3V, which is excited by the light emitting element 2 to emit green light, and a YAG phosphor (light-emitting phosphor YAG) 3C, which is excited by the light emitting element 2 to emit light in the spectral range from yellowish-green to yellow.

The red phosphor 3A is a nitride phosphor and the green phosphor 3B is halogenerator. Thus, it is proposed a light-emitting device 100, which creates light by mixing light emitted from the light-emitting element (blue semiconductor light-emitting element 2, light emitted from the nitride phosphor (red phosphor) 3A, light emitted from halogenerator (green phosphor) 3B, and yellowish-green or yellow light emitted by the YAG phosphor 3C, in contrast to the light-emitting device according to the prior art, which contain the blue semiconductor with etoileui element (blue led) the red phosphor and the green phosphor.

The light emitting device 100 having the above structure allows you to create white light, which consists of blue, green, yellow and red components, and each component has a high intensity. The use of phosphor (yttrium aluminium garnet) AIG 3C, in particular, allows you to add rays of yellow and orange light for a significant improvement in the color quality, resulting in a significant increase in light output. Light emitted from the light emitting device 100, showing excellent color quality with an average color rendering index average of 75 or more.

The average color rendering index Ra is the index of the quality of color reproduction, defined in Japanese industrial standard JIS Z 8726. The index is expressed by the color fidelity compared with the colors of the light emitted by the reference source. The Ra value close to 100 indicates the best color quality.

Figure 2 presents the emission spectrum of the light-emitting device 100 according to a variant embodiment of the invention (example 1). On the emission spectrum of the light-emitting device 100 includes peaks from the first to the third (peak wavelengths) in the range from shorter wavelength to longer wavelength.

The first is ikova wavelength (wavelength of the first peak emission) is connected, mainly, with the light emitted from the light-emitting element (blue led) 2. The second peak wavelength (wavelength of the second peak radiation) is connected, mainly, with the radiation of the green phosphor 3B and the YAG phosphor 3C, which are excited by light emitted from light emitting element 2. The third peak wavelength (wavelength of the third peak radiation) is connected, mainly, with the radiation generated by the red phosphor 3A, which is excited by light emitted from light emitting element 2.

For comparison on Fig shows the emission spectrum of a fluorescent lamp cold cathode (CCFL), which was used to illuminate the display device, and Fig shows the emission spectrum of the light-emitting device, in which the mixed light of two colors emitted from the blue led and emitted by the phosphor, such as YAG (yttrium aluminium garnet), and the phosphor is excited by light emitted from a blue led.

On the emission spectrum of a fluorescent lamp cold cathode (CCFL) has five sharp peaks, including the peak of about 435 nm, associated with the emission of mercury, the main peak of about 545 nm, associated with the radiation of the green phosphor, and two small peak around 490 nm and 585 nm. In contrast, the emission spectrum of the light-emitting device, in which the mixed light of two colors, there are only the VA peak. And the emission spectrum of the fluorescent lamp cold cathode (CCFL) and the emission spectrum of the light-emitting device, in which the mixed light, different from the spectrum of the emission light-emitting device 100 according to the present invention, which is represented in figure 2.

The light emitting device 100 can further improve the color quality of light radiation, if satisfied four preferred conditions below.

Figure 6 presents an example of the emission spectrum of the light-emitting device 100 according to a variant embodiment of the invention (example 5), which has a higher color quality.

First, you need to choose the light-emitting element 2, so that the peak wavelength of the spectrum of the radiation was within the appropriate range (for example, from 440 nm to 470 nm) and to the first peak wavelength of the emission spectrum of the light-emitting device 100 was in the range of from 440 nm to 470 nm.

Secondly, you must use the green phosphor 3B and the YAG phosphor 3C, which will be described in detail below, to a second peak wavelength spectrum radiation was in the range of from 510 nm to 550 nm.

Thirdly, you must use the red phosphor 3A, which is described in detail below, to the third peak wavelength of the spectrum of the doctrine was in the range of from 630 nm to 670 nm.

Fourth, the minimum relative intensity of the light beam between the second peak wavelength and the third peak wavelength (the relative intensity of light emission from the lowest value in the range between the second peak wavelength and the third peak wavelength spectrum radiation) should be more than 80% of the lesser of the relative intensities of the light emission in the second and the third peak wavelength.

When satisfying these four conditions can reach a very high color quality with an average color rendering index Ra, for example, of 85 or more.

This high quality color reproduction can be achieved due to the fact that any of the components produced white light, i.e. blue, green, yellow and red, has a high intensity.

With regard to the fourth condition is to ensure that the minimum relative intensity of the light beam between the second peak wavelength and the third peak wavelength spectrum radiation accounted for more than 80% of the lesser of the relative intensities of the light emission in the second and third peak wavelength, for example, by setting the difference of 80 nm or more between the peak wavelength of light emitted from light emitting element 2 and the peak wavelength of light, and is disrupting the green phosphor 3B.

You can also ensure that the minimum relative intensity of the light beam between the second peak wavelength and the third peak wavelength spectrum radiation accounted for more than 80% of the lesser of the relative intensities of the light emission in the second and third peak wavelength, increasing the number of YAG phosphor 3C, which emits light in the wavelength range between the second peak wavelength and the third peak wavelength.

Meanwhile, when the satisfaction from the first to the third conditions it is possible to manufacture the light emitting device 100, with excellent colour reproduction, achieving a minimum relative intensity of light emission between the second peak wavelength and the third peak wavelength component of 80% or less of the lesser of the relative intensities of light emission in the second and third peak wavelength, and setting the number of YAG phosphor 3C, which must be added equal to 50 wt.% or less of the total amount added of the phosphor (the amount of the red phosphor 3A, the green phosphor 3B and the YAG phosphor 3C).

Respectively, can be made light-emitting device, in which the balance between color quality and colour reproduction is set at a high level, and which provides high ka is estvo color for example, if the average color rendering index Ra average of 75 or more, and high colour reproduction with respect NTSC average of 72% or more.

The NTSC ratio is the ratio of the area of a triangle defined by three points color (red, green, blue) of the test display, the area of a triangle defined by the points on the chromaticity of the three primary colors: red (0,670; 0,330), green (0,210; 0,710) and blue (0,140; 0,080) standard chromaticity (x, y), according to the charts, color CIE1931 XYZ color system of the TV set by the Committee on national television standards in the United States. The range of color reproduction is determined by the ratio of the areas, with a greater ratio of the areas indicates a higher colour reproduction. In the television broadcast standard NTSC ratio is typically installed 72% and is expected to provide a satisfactory color reproduction of the NTSC ratio should be 70% or more, and preferably 72% or more.

Thus, the present invention proposes a light emitting device with high color quality, which can be used, for example, in the lighting device.

When the above conditions can be made of the lighting device, which features a balance of the quality of color reproduction and color reproduction at a high level. This lighting device, which features a balance of color quality and color reproduction at a high level, can be used as a backlight of the liquid crystal display monitor, digital camera, printer, etc.

Along with the fact that the first peak is formed mainly by the light emitted from light emitting element 2, in the formation of the first peak also contribute light emitted from the red phosphor 3A, light emitted from the green phosphor 3B, and the light emitted by the phosphor (yttrium aluminium garnet) AIG 3C. In the first peak wavelength may be different from the peak wavelength of light emitted from light emitting element 2.

Similarly, along with the fact that the second peak is formed mainly by the light emitted from the green phosphor 3B, in the formation of the second peak also contribute to the light emitted by the YAG phosphor 3C, which in most situations has a broader peak radiation than the green phosphor 3B, light emitted from light emitting element 2, and light emitted from the red phosphor 3A. In the second peak wavelength different from the peak wavelength of light emitted from the green phosphor 3B.

In addition, along with the fact that the third peak is formed mainly by the light emitted from the red phosphor 3A, in which formirovanie third peak also contribute light, the emitted light emitting element 2, light emitted from the green phosphor 3B, and the light emitted by the phosphor (yttrium aluminium garnet) AIG 3C. In the third peak wavelength may be different from the peak wavelength of light emitted by the red phosphor 3A.

The components of the light-emitting device 100, namely, the red phosphor 3A, the green phosphor 3B, the phosphor (yttrium aluminium garnet) AIG 3C and blue led 2 will be described in detail below.

1. The red phosphor

The red phosphor (the phosphor emitting red light) 3A is formed from a nitride phosphor that absorbs ultraviolet light or blue light emitted by the light emitting element 2, and emits red light.

As the red phosphor 3A can be used nitride phosphor activated by Eu and containing the element M1group II: Si, Al, B and N, which are represented by the following General formula (I).

In the formula (I) M1is at least one kind of element selected from the group consisting of Mg, Ca, Sr and Ba; while "w", "x", "y" and "z"preferably satisfy the relationships: 0,056≤w≤9; x=1; 0,056≤y≤18 and 0.0005≤z≤0,5.

Preferably, "w", "x", "y" and "z" satisfy the relations: 0,4≤w≤3; x=1; 0,143≤y≤8.7 and 0≤z≤0,5; and most preferably satisfy the relations: 0,5≤w≤3; x=1; 0,167≤y≤8,7 and 0.0005≤z≤0.5, which gives the opportunity to get the color tone, high brightness and full width half max of the light radiation, which is most desirable. The value "z" is preferably 0.5 or less, preferably, 0.3 or less, but not less than 0,0005. Further, it is preferable that the molar concentration of boron was of 0.001 or more and 0.2 or less. In that case, if the nitride phosphor activated 3A Eu, part of the Eu can be replaced, at least one kind of rare earth element selected from the group consisting of Sc, Tm, Yb, Y, La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er and Lu.

In the formula (I) M1is preferably at least one kind of Ca and Sr, in this case, "w", "x", "y" and "z"preferably satisfy the relationships: 0,5≤w≤1,5; x=1; for 0.5≤y≤1.5 and 0≤z≤0.3, and which enables to obtain a more desirable color tone, high brightness, more desirable full width half max light emission and light emission, having a more intense red hue with a low content of orange component.

Other preferred nitride phosphor is a phosphor represented by the following General formula (I'):

where M1is at least one kind of element selected from the group consisting of Mg, Ca, Sr and Ba, while the "w" is in the range of 0.001≤w≤0.3, and and "z" is in the range of 0.0005≤z≤0,5.

Another preferred nitride phosphor is a phosphor represented by the following General formula (I):

where M1is at least one kind of element selected from the group consisting of Mg, CA, Sr and BA, while "w" is in the range 0.04≤w≤3, and z is in the range of 0.0005≤z≤0,5.

In the phosphors represented by the formula (I), (I') and (I"), when Ca is used as M1preferably, apply Ca separately. However, part of the Ca can be replaced by Sr, Mg or Ba, a combination of Sr and Ba, or the like, the Peak emission wavelength of the nitride phosphor can be adjusted by replacing part of Ca by Sr.

Along with the fact that Si is also preferably used alone, a part of Si can be replaced by an element of the group IV: C or Ge. The nitride phosphor which is cheap and has a good crystalline structure can be obtained when using only one Si.

The peak wavelength of light emitted by the red phosphor 3A, is preferably from 590 nm to 700 nm, preferably from 630 nm to 670 nm, and most preferably, from 640 nm to 670 nm.

The composition of the red phosphor 3A can be adjusted in the range described above to set the peak wavelength of the red phosphor 3A within desire is on range, described above. The third peak wavelength of light emitted from the light emitting device 100 can be displaced within the preferred range when moving the peak wavelength of light emitted by the red phosphor 3A.

When Sa is used as M1peak wavelength of light emitted by the red phosphor may be shifting towards longer wavelengths with increasing Eu concentration and can be moved in the region of shorter wavelengths with decreasing concentration of Eu. In particular, when replacing 3 mol.% CA Eu peak wavelength of light emitted by the red phosphor 3A, is 660 nm, and when replacing 1 mol.% CA Eu peak wavelength of light emitted by the red phosphor 3A, is 650 nm.

When Sr is used as M1or is it a part of the wavelength of the light emitted by the red phosphor 3A, can be moved in the region of shorter wavelengths.

The shift of the peak wavelength of light emitted by the red phosphor 3A, in the region of shorter wavelengths normally causes the third peak wavelength of light emitted from the light emitting device 100, to navigate in the region of shorter wavelengths, and the shift of the peak wavelength of light emitted by the red phosphor 3A, in the area of longer waves usually makes the third peak wavelength of light emitted from vitoslim device 100, to navigate in the region of longer waves.

As described earlier, you may encounter a case where the peak wavelength of light emitted by the red phosphor 3A, is not consistent with a third peak wavelength, and therefore, the third peak wavelength can be set within the range from 630 nm to 670 nm, even when the peak wavelength of light emitted by the red phosphor 3A, is not in the range from 630 nm to 670 nm.

The activator is Eu, preferably, used alone, although part of the Eu can be replaced by Sc, Tm, Yb, Y, La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, or Lu. When part of the Eu replaces another element, another element acts as coactivator. Using coactivator allows you to change the color tone of the phosphor and handling characteristics of the radiation.

The red phosphor 3A, which is a nitride phosphor may also contain at least one kind of element selected from the group consisting of elements of group I: Cu, Ag and Au, the elements of the group III: Ga and B, elements of the group IV: Ti, Zr, Hf, Sn and Pb, elements of group V: P, Sb and Bi and elements of group VI: S, with a total concentration of from 1 to 500 ppm, Because these elements are dispersed during firing in the manufacturing process, the concentration of these elements in the annealed material below the initial concentration in the preparation of the material. Therefore, it is preferable to add ateelement in raw materials at a concentration of 1000 ppm or less. Adding these elements, you can adjust the efficiency of light emission.

The ratio of the molar concentration of Fe, Ni, Cr, Ti, Nb, Sm and Yb to the molar concentration of M1preferably is 0.01 or less. This is because an excessively high concentration of Fe, Ni, Cr, Ti, Nb, Sm and Yb can lower the brightness of the radiation.

2. The green phosphor

The green phosphor (a phosphor emitting green light) 3B will be described below. The green phosphor 3B formed from halogenoalkane. The green phosphor 3B absorbs ultraviolet light or blue light emitted by the light emitting element 2, and emits green light.

As the green phosphor 3B can be used, the phosphor represented by the following General formula (II).

In the formula (II) M2is at least one kind of element selected from the group consisting of CA, Sr, BA, Zn and Mn; M3is at least one kind of element selected from the group consisting of Si, Ge and Sn; M4is at least one kind of element selected from the group consisting of B, Al, Ga and In; X is at least one kind of element selected from the group consisting of F, Cl, Br, and I; R is at least one kind of element selected from among ecotilling elements, when that Unit is contained as an essential element (or a mandatory component); moreover, "y", "a", "b" and "c" satisfy the relations: 0,0001≤y≤0,3; 7,0≤a<10,0; 3,0≤b≤5.0 and 0≤c≤1,0.

The green phosphor represented by the General formula (II)contains at least one kind of element selected from the group consisting of Ca, Sr, Ba, Zn and Mn, preferably Ca. In that case, when the phosphor contains Ca, part of Ca can be replaced by Mn, Sr, or Ba.

From the phosphors represented by the formula (II), more preferred is a green phosphor represented by the following General formula (II'). The green phosphor 3B represented by the General formula (II'), has an excellent ability to colour reproduction, with high brightness, narrow full width half max light emission and a lower content of blue-green and orange light.

In the formula (II') M2is at least one kind of Ca and Mn; M3is at least one kind of Si and Ge; and X is at least one kind of elements selected from the group consisting of F, Cl, Br and I.

The value of "y", "a" and "b" satisfy the relations: 0,001≤y≤0,3; 7,0≤a≤10,0 and 3.0≤b≤5,0.

Green phosphors represented by the General formulas (II) and (IF)contain, at IU is e, one kind of elements selected from the group consisting of Ca, Sr, BA, Zn and Mn, preferably Ca. In that case, when the phosphor contains Sa, part of the Ca can be replaced by Mn, Sr, or Ba.

Green phosphors represented by the General formulas (II) and (I I') contain at least one kind of elements selected from the group consisting of Si, Ge and Sn, preferably Si. In that case, when the phosphor contains Si, a part of Si can be replaced by a Ge or Sn.

Green phosphors represented by the General formulas (II) and (I I') contain at least one kind of elements selected from the group consisting of F, Cl, Br and I, preferably Cl. In that case, when the phosphor contains Cl, part of Cl can be replaced by F, Br or I.

The green phosphor represented by the General formula (II)contains at least one kind of rare earth element, despite the fact that Eu is contained as an essential element. The term "rare earth"refers to the 17 elements: scandium, yttrium and lanthanoids elements. Of these elements, most preferably, is used Eu. Part of the Eu can be replaced by Ce, Pr, Nd, Sm, Tb, Dy, Ho, Er, Tm or Yb. More preferably, the part of the Eu can be replaced by Ce, Pr, Nd, Sm, Tb, Dy, Ho, or Tm.

Green phosphors represented by the General formulas (II) and (I I')have a peak wavelength in the spectral range from C is Lenogo to yellow with a wavelength of 490 nm to 584 nm. The phosphors can emit light with a peak wavelength in the range from about 500 nm to 520 nm, when contained Ca, Eu, Mg, Si, O, and Cl, or in the range of from about 530 nm to 570 nm, when contained CA, Mn, Eu, Mg, Si, O, and Cl. Since the peak wavelength varies depending on the number of contained elements and composition, the green phosphor 3B can be adjusted if you want to be the preferred peak wavelength.

The peak wavelength of light emitted from the green phosphor 3B, is preferably from 490 nm to 560 nm, preferably, from 500 nm to 550 nm and, most preferably, from 505 nm to 540 nm.

The second peak wavelength of light emitted from the light emitting device 100 can be moved within the desired range when moving the peak wavelength of light emitted from the green phosphor 3B, within the preferred range described above.

In the composition (CA, Eu)8MgSi4O16Cl2for example, the peak wavelength of light emitted from the green phosphor 3B, may be shifted to 525 nm in the region of longer wavelengths with increasing Eu concentration up to 10 mol.% relative to Ca. The peak wavelength can be shifted into the region of shorter wavelengths with decreasing concentrations of Eu relative to Sa. For example, the peak wavelength can be shifted up to about 500 nm in the region of shorter on decreasing the concentration of the Eu prior to 1 mol.% regarding Ca.

In the composition (CA, Eu, Mn)8MgSi4O16Cl2peak radiation at the expense of the Eu can be offset only up to about 545 nm (emission Mn) by increasing the concentration of Mn up to 5 mol.% regarding Sa.

As described earlier, you may encounter a case where the maximum length of the light emitted by the green phosphor 3B, is not consistent with the second peak wavelength, and therefore, the second peak wavelength can be set within the range from 510 nm to 550 nm, even when the peak wavelength of light emitted from the green phosphor 3B, is not in the range from 510 nm to 550 nm.

As described earlier, you can ensure that the minimum relative intensity of the light beam between the second peak wavelength and the third peak wavelength of the emission spectrum of the light-emitting device 100 was more than 80% of the lesser of the relative intensities of the light emission in the second and third peak wavelength, by setting the difference of 80 nm or more between the peak wavelength of light emitted from light emitting element 2, and the peak wavelength of light emitted from the green phosphor 3B. The above methods of shifting the peak wavelength of light emitted from the green phosphor 3B, can be used to provide the required conditions.

As the green phosphor 3B can be used one the th green phosphor, represented by the following General formula (III), which will be described below.

In the General formula (III) M5is at least one kind of elements selected from the group consisting of CA, Sr, BA, Zn and Mn; X is at least one kind of elements selected from the group consisting of F, Cl, Br and I; in addition, "x", "y", "w", "a", "b" and "C" satisfy the relationships: about 6.5≤x≤8,0; 0,01≤y≤2,0; 3,7≤z≤4,3; 0≤w≤0,5; a=x+y+1+2z+(3/2)w-b/2-(3/2)c; 1,0≤b≤1.9 and 0≤c≤3,0.

In the General formula (III), it is preferable that w=0 and c=0, what causes green phosphor to emit light of higher brightness. In this case, formula (III) can be represented as M5xEuyMgSizOaXb.

3. The phosphor YAG (yttrium aluminium garnet)

The light emitting device 100 according to the present invention, in addition to the red phosphor 3A and the green phosphor 3B, contains the YAG phosphor 3C, which emits light in the spectral range from yellowish-green to yellow.

When using the YAG phosphor 3C is added to the emission of yellow and orange light, which can significantly improve the color quality and significantly increase the light output.

The peak wavelength of light emitted by the YAG phosphor 3C, can be adjusted, as necessary, with the aim of increase the of the difference between the peak emission of the YAG phosphor 3C and a peak emission of the green phosphor 3B, to help get the minimum relative intensity of light emission between the second peak wavelength and the third peak wavelength of the emission spectrum of the light-emitting device 100, which constitutes more than 80% of the lesser of the relative intensities of the light emission in the second and the third peak wavelength.

The peak wavelength of light emitted by the YAG phosphor 3C, may be shifting towards longer wavelengths, for example, when replacing Y by Gd, and in the region of shorter wavelengths when replacing Al by Ga. Also, the peak wavelength of light emitted by the YAG phosphor 3C, may be shifting towards longer wavelengths with increasing Ce content or shifting towards shorter wavelengths with decreasing content of Ce.

Since the peak wavelength of light emitted by the YAG phosphor is relatively close to the peak wavelength of light emitted from the green phosphor 3B, in many cases, the peak of the radiation corresponding to the peak emission of the YAG phosphor 3C, peak overlaps with a second peak wavelength, which mainly refers to the peak wavelength of light emitted from the green phosphor 3B, and, as a rule, are not detected.

Not imposed any restrictions on the YAG phosphor 3C, which emits light in the spectral range from yellowish-green to yellow, and mo which should be used any known phosphor YAG. The phosphor represented by the following General formula (IV)is an example of a preferred phosphor is used as the YAG phosphor 3C.

In the formula (IV) M6is at least one kind of element selected from among rare earth elements; and M7is at least one kind of element selected from the group consisting of B, Al, Ga and In.

4. The structure of the light-emitting device

One version of the light emitting device 100 according to the invention will be described in detail with reference to figure 1. The light emitting device 100 shown in figure 1, is a light-emitting device for surface mounting, but is not limited to this, and the present invention can be applied to any forms traditionally used in light emitting devices, such as bullet-shaped form of the led.

The light emitting device 100 has a mounting housing) 1 light-emitting element with an open notch at the top. The light-emitting element (blue led) 2 fixed when using material for mounting the crystal on the bottom surface of the recess of the housing 1, and the light emitting element 2 is covered with a transparent resin 4 containing dispersed therein phosphors 3A, 3B. The upper electrode of the light emitting element 2 is connected to p the pout wire (conductor), 5 with the first external electrode 6, and the lower electrode of the light emitting element 2 is connected to the second wire (conductor), 7 with the second external electrode 8. The inner surface of the hollow body 1 is covered with a reflective material 9.

The components of the light-emitting device 100 will be described below.

The light-emitting element

The light-emitting element 2 has a light emitting layer formed, for example, from semiconductor compound is gallium nitride, and emits light, which forms the first peak in the emission spectrum of the white light emitting device 100 used in the present invention, and, in addition, serves as a light source that excites the red phosphor 3A, 3B, the green phosphor and the phosphor (yttrium aluminium garnet) AIG 3C.

There are various nitride semiconductor compound (General formula: IniGajAlkN, with 0≤i;0≤j;0≤k;I+j+k=1), containing, for example, InGaN and GaN, doped with different impurities. The light-emitting element 2 can be formed by growing on a substrate a light-emitting layer which is a semiconductor such as InGaN or GaN, a method of chemical vapor deposition of ORGANOMETALLIC compounds (MOCVD) or similar method. The semiconductor may have homostructure, heterostructure or double heterostructure, which form the transition MIS, the transition PI and PN junction. Edit what I type of material and the composition of the mixture components nitride semiconductor layer, you can adjust the wavelength so that the light-emitting element 2 had a peak wavelength ranging from 440 nm to 470 nm. The light-emitting element 2 may also be a semiconductor active layer formed from a thin film, where the quantum effect is manifested in the structure of quantum pit or in the structure with quantum wells.

Installation housing a light-emitting element

Mounting housing) 1 light-emitting element, preferably formed from a material having excellent opacity, allowing light emitted from light emitting element 2, can not leak out. Due to the fact that the housing is in contact with the external electrodes 6, 8, it should be formed of insulating material.

Typically, to form the body can be used, for example, laminated steklopokety sheet, the laminated sheet of bismaleimide/triazine (BT) resin, ceramic, liquid crystal polymer or polyimide. For the manufacture of the housing 1, you can use the molding operation, for example, by placing in the form of a metal part, for external electrodes 6 and 8, filling the material into the mold, and then, after cooling, removing from the mold a molded case.

The external electrode

The external electrodes 6 and 8 are provided for electr the economic connections of the light-emitting element 2 with the outer side of the housing 1 through the first wire 5 and the second wires 7 and preferably formed from a material having a high electrical conductivity. For the external electrodes 6 and 8 can be used, for example, a metallic material (for example, a material, a metallic Nickel) or good electrical conductors such as phosphor bronze, iron or copper.

Reflective material

Reflective material 9 may be, for example, a film formed of polyethylene terephthalate resin, polycarbonate resin, polypropylene resin or the like, which is to make the reflection properties is mixed with barium titanate, aluminum oxide, titanium oxide, silicon oxide, calcium phosphate or other Reflective material 9 can be fixed on the side wall of the housing 1, for example, by silicone resin, epoxy resin or the like

Reflective material 9 may also be a metal film such as Al, Ag, Cu or the like formed inside and/or outside the housing 1 on the side wall of the via metallization or sputtering.

Material for mounting crystal

Material for mounting crystal is used for fixing the light-emitting element 2 in the recess of the mounting housing light emitting element. Material for attaching the crystal must be heat-resistant so that it does not lose its properties when exposed to heat, wydase the CSOs light-emitting element 2. For example, as a material for the mounting of the crystal can be used epoxy, Ag paste or eutectic material.

Electrical conductor

The first wire 5 and the second wire 7 are electrical conductors. It is necessary that the first wire 5 and the second wire 7 were in good ohmic contact with the electrodes of the light-emitting element 2, providing mechanical conductivity, electrical conductivity and thermal conductivity. Electrical conductors used as the first wire 5 and the second wire 7 may be formed from metal, such as gold, copper, platinum, aluminum or their alloys.

Transparent resin

Transparent resin 4 that fills the recess of the housing 1, which contains dispersed therein a red phosphor 3A, the green phosphor 3B and the phosphor (yttrium aluminium garnet) AIG 3C, seals the light emitting element 2, the electrical conductors (the first wire and the second wire) 5 and 7, providing protection from external influence. As a transparent resin (polymer sealant) 4 can be used various resins and to provide resistance to weathering (or pogolosovali), it is preferable to use, for example, epoxy resin, urea resin, or silicone resin. Add in the transparent resin 4 disperging the substance reduces the radiation directivity of the light emitting element 2 and increases the viewing angle. As dispersing substances, it is preferable to use barium titanate, titanium oxide, aluminum oxide, silicon oxide or the like, to create a light-emitting device which emits light of the desired color in the transparent resin can be introduced various phosphors, depending on the desired color of emitted light emitting element 2 of the light.

Examples

Examples of the present invention will be described below. These examples are provided to facilitate understanding of the invention and are not intended to limit the scope of the present invention.

Example 1

For the formation of the housing 1 molten polyphthalamide resin is poured into a mold, which is closed after placing in it a pair of positive and negative external electrodes 6 and 8, and the resin utverjdayut. The housing 1 has a hole (recess), which is adapted to accommodate a light-emitting element 2. After cooling, the shaped body 1 and the external electrodes 6 and 8 are the same entity.

The light-emitting element (chip led) 2, which emits light with a peak wavelength of 455 nm, fixed on the bottom surface of the recess of the housing 1, which was formed as described above. Then the electrical conductors 5 and 7 carry out the electrical connection of the external electrodes 6 and 8 with the light-emitting element 2.

Then 3 g kremniyorganika eskay resin mixed with about 0.3 g of halogenoalkane Ca 8MgSi4O16Cl2: Eu ((Ca7,6, Eufor 0.4) MgSi4O16Cl2), which has a peak emission at a wavelength of about 520 nm, with 0.1 g of phosphor YAG (Y2,95(Al0,8, Gaof 0.2)5O12: Ce0,05), which has a broad emission spectrum with a peak wavelength of about 540 nm, and from about 0.11 g nitride phosphor CaAlSiBN3: Eu ((CA0,97, Eu0,03) AlSiBN3), which has a peak emission at a wavelength of about 660 nm. The obtained transparent resin 4 is poured into the recess of the housing 1 to form a smooth surface. In conclusion, conducting a heat treatment at 70°C for 3 hours and then at 150°C for one hour.

Figure 2 presents the emission spectrum of the light-emitting device 100, which is manufactured as described above.

On the emission spectrum has a first peak around 450 nm, the second peak around 520 nm and a third peak around 650 nm.

Minimum relative intensity of the light beam between the second peak wavelength and the third peak wavelength is 0.32, which corresponds to 52% of the relative intensity of the light radiation at a second peak wavelength component of 0.62, which is below the intensity of the light radiation at the third peak wavelength component of 0.64. The average color rendering index Ra, which is the item of the parameter in the color quality, 79, which is indicative of high quality colour rendering.

14 " LCD backlight in which the light source used light-emitting device 100 has an NTSC ratio, which is an indicator plate, constituting 72% or more, and higher brightness of white light.

The result shows that the light emitting device 100 according to example 1 has excellent color quality, what is the purpose of the invention, and, in addition, has excellent colour reproduction.

Example 2

The light emitting device 100 is manufactured in the same manner as the light emitting device in example 1, except that 0.3 g of halogenoalkane Ca8MgSi4O16Cl2: Eu ((CA7,6, Eufor 0.4)MgSi4O16Cl2), which has a peak wavelength of about 520 nm, 0.15 g of phosphor YAG (Y2,95(Al0,8, Gaof 0.2)5O12: Ce0,05), which has a peak wavelength of about 540 nm and a broader emission spectrum than the emission spectrum of green phosphor, and about 0.11 g nitride phosphor CaAlSiBN3: Eu ((CA0,97, Eu0,03)AlSiBN3), which has a peak wavelength of about 660 nm, are mixed with 3 g of silicone resin.

Figure 3 presents the emission spectrum of light-emitting devices is 100, manufactured as described above.

On the emission spectrum has a first peak around 450 nm, the second peak around 520 nm and a third peak around 650 nm.

Minimum relative intensity of the light beam between the second peak wavelength and the third peak wavelength is 61% of the relative intensity of the light radiation at a second peak wavelength, which is lower relative intensity of the light radiation at the third peak wavelength. The value of Ra is 84, which is indicative of high quality colour rendering.

The light source for the backlight, produced using a light-emitting device 100, which is similar to that described in example 1, has an NTSC ratio of 72% or more and, moreover, higher brightness white light.

Example 3

The light emitting device 100 is manufactured in the same manner as the light emitting device in example 1, except that 0.3 g of halogenoalkane Ca8MgSi4O16Cl2: Eu ((CA7,6, Eufor 0.4)MgSi4O16Cl2), which has a peak emission around 520 nm, 0.25 g of phosphor YAG (Y2,95(Al0,8, Gaof 0.2)5O12: Ce0,05), which has a peak emission of about 540 nm and a broad emission spectrum, and about 0.13 g of a nitride phosphor CaAlSiBN3: Eu ((CA0,97, Eu0,03) AlSiBN3), the cat is which has a peak emission of about 660 nm, mixed with 3 g of silicone resin.

4 shows the emission spectrum of the light-emitting device 100, received by the specified method.

On the emission spectrum has a first peak around 450 nm, the second peak around 520 nm and a third peak around 640 nm.

Minimum relative intensity of the light beam between the second peak wavelength and the third peak wavelength is 75% of the relative intensity of the light radiation at a second peak wavelength, which is lower relative intensity of the light radiation at the third peak wavelength. The value of Ra reaches 89, which is indicative of high quality colour rendering.

The light source for the backlight, produced using a light-emitting device 100, which is similar to that shown in example 1 has an NTSC ratio of 70% and has a higher brightness white light.

Example 4

The light emitting device 100 is manufactured similarly to the light-emitting device shown in example 1, except that about 0.28 g of halogenoalkane Ca8MgSi4O16Cl2: Eu ((CA7,7, Eufor 0.3)MgSi4O16Cl2), which has a peak emission of about 515 nm, 0.16 g of phosphor YAG (Y2,95(Al0,8, Gaof 0.2)5O12: Ce0,05), which has a peak emission of about 540 nm and width the cue radiation spectrum, and about 0.2 g of a nitride phosphor CaAlSiBN3: Eu ((CA0,99, Eu0,01)AlSiBN3), which has a peak emission around 650 nm, are mixed with 3 g of silicone resin.

Figure 5 presents the emission spectrum of the light-emitting device 100, which is manufactured as described above.

On the emission spectrum has a first peak around 450 nm, the second peak around 520 nm and a third peak around 640 nm.

Minimum relative intensity of the light beam between the second peak wavelength and the third peak wavelength is 73% of the relative intensity of the light radiation at the third peak wavelength, which is lower relative intensity of the light radiation at the second peak wavelength. Received quite a high value of Ra, constituting 80, which indicates a high quality colour rendering.

The light source for the backlight, produced using a light-emitting device 100, which is similar to that described in example 1, has an NTSC ratio of 72% and, moreover, higher brightness white light.

Example 5

Light-emitting device was manufactured in the same manner that the light emitting device in example 1, except that about 0.1 g of halogenoalkane Ca8MgSi4O16Cl2: Eu ((CA7,6, Eufor 0.4) MgSi4O16Cl2), which is the meet peak emission around 520 nm, 0.3 g of phosphor YAG (Y2,95(Al0,8, Gaof 0.2)5O12: CE0,05), which has a peak emission of about 540 nm and a broad emission spectrum, and about 0.11 g nitride phosphor CaAlSiBN3: Eu ((CA0,97, Eu0,03) AlSiN3), which has a peak wavelength of about 660 nm, are mixed with 3 g of silicone resin.

Figure 6 presents the emission spectrum of the light-emitting device 100 manufactured as described above.

The spectrum has a first peak around 450 nm, the second peak around 530 nm and a third peak around 640 nm.

Minimum relative intensity of the light beam between the second peak wavelength and the third peak wavelength is 96% of the relative intensity of the light radiation at a second peak wavelength, which is lower relative intensity of the light radiation at the third peak wavelength. The results are very high Ra value of 93, which is indicative of high quality colour rendering.

The light source for the illumination lamp is manufactured using the light-emitting device 100, which is similar to that shown in example 1 has an NTSC ratio of 64%.

Example 6

The light emitting device 100 is manufactured in the same manner as the light emitting device shown in example 1, except that about 0,22 g Halogens the Licata Ca 8MgSi4O16Cl2: Eu ((Ca7,7Eufor 0.3) MgSi4O16Cl2), which has a peak emission of about 515 nm, 0.2 g of phosphor YAG (Y2,95Al5O12: Ce0,05), which has a peak emission around 560 nm and a broad emission spectrum, and about 0.1 g of a nitride phosphor CaAlSiBN3: Eu ((CA0,99, Eu0,01) AlSiN3), which has a peak emission around 650 nm, are mixed with 3 g of silicone resin.

In this embodiment of the invention the difference between the peak wavelength of light emitted from the light-emitting element (blue led) 2, and the peak wavelength of light emitted from the green phosphor 3B, is 55 nm.

Figure 7 presents the emission spectrum of the light-emitting device 100, which is manufactured as described above.

On the emission spectrum has a first peak around 450 nm, the second peak around 530 nm and a third peak around 630 nm.

Minimum relative intensity of the light beam between the second peak wavelength and the third peak wavelength is 97% of the relative intensity of the light radiation at the third peak wavelength, which is lower relative intensity of the light radiation at the second peak wavelength. Received a fairly high value Ra of 90, which is indicative of high quality colour rendering.

History the nick of light for illumination, manufactured using the light-emitting device 100, which is similar to that described in example 1, has an NTSC ratio of 68% and has a higher brightness white light, compared to the light-emitting device shown in example 1.

Example 7

The light emitting device 100 is manufactured in the same manner as the light emitting device shown in example 1, except that about 0.18 g of halogenoalkane Ca8MgSi4O16Cl2: Eu ((CA7,7, Eufor 0.3) MgSi4O16Cl2), which has a peak emission of about 515 nm, 0.08 g of phosphor YAG (Y2,95Al5O12: Ce0,05), which has a peak emission around 560 nm and a broad emission spectrum, and about 0.26 g of a nitride phosphor CaAlSiBN3: Eu ((CA0,99, Eu0,01) AlSiN3), which has a peak emission around 650 nm, are mixed with 3 g of silicone resin.

On Fig presents the emission spectrum of the obtained light-emitting device 100.

On the emission spectrum has a peak associated with the radiation of the light-emitting element 2 and the fuzzy maximum associated with the emission of the phosphors 3A, 3B, 3C, without clearly observed the third peak.

The light emitting device has a very high color quality, the value of Ra is 92.

The light source for illumination, manufacturing is undertaken when using the light-emitting device, which is similar to that shown in example 1 has an NTSC ratio of 62% and less brightness white light compared to the light source in example 1.

Example 8

The light emitting device 100 is manufactured in the same manner as the light emitting device shown in example 1, except that about 0.28 g of halogenoalkane Ca8MgSi4O16Cl2: Eu ((CA7,7, Eufor 0.3) MgSi4O16Cl2), which has a peak emission of about 515 nm, 0.14 g of phosphor YAG (Y2,95Al5O12: Ce0,05), which has a peak emission around 560 nm and a broad emission spectrum, and about 0.14 g of a nitride phosphor CaAlSiBN3: Eu ((CA0,99, Eu0,01) AlSiN3), which has a peak emission around 650 nm, are mixed with 3 g of silicone resin.

Figure 9 presents the emission spectrum of the light-emitting device 100, which is manufactured as described above.

On the emission spectrum has a first peak around 450 nm, the second peak around 520 nm and a third peak around 630 nm. Minimum relative intensity of the light beam between the second peak wavelength and the third peak wavelength is 82% of the relative intensity of the light radiation at the third peak wavelength, which is lower relative intensity of the light radiation at the second peak wavelength. Procentual high value of Ra, component 88, which indicates the high quality colour rendering.

The light source for illumination, produced using a light-emitting device similar to that shown in example 1 has an NTSC ratio of 70% and higher brightness white light, compared with the light source in example 1.

Example 9

The light emitting device 100 is manufactured in the same manner as the light emitting device shown in example 1, except that about 0.28 g of halogenoalkane Ca8MgSi4O16Cl2: Eu ((CA7,7, Eufor 0.3) MgSi4O16Cl2), which has a peak emission of about 515 nm, 0.14 g of phosphor YAG ((Y0,8, Gdof 0.2)2,85Al5O12: Ceof 0.15), which has a peak emission of about 570 nm and a broad emission spectrum, and about 0.2 g of a nitride phosphor CaAlSiBN3: Eu ((CA0,99, Eu0,01)AlSiN3), which has a peak emission around 650 nm, are mixed with 3 g of silicone resin.

Figure 10 presents the emission spectrum of the light-emitting device 100, which is manufactured as described above.

On the emission spectrum has a first peak around 450 nm, the second peak around 520 nm and a third peak around 630 nm.

In the thus obtained light-emitting device minimum relative intensity of the light beam between the second the second peak wavelength and the third peak wavelength is 83% of the relative intensity of the light radiation at the third peak wavelength, which is lower relative intensity of the light radiation at the second peak wavelength.

The value of Ra reaches 89, which is indicative of high quality colour rendering.

The light source for illumination, produced using a light-emitting device 100, which is similar to that shown in example 1 has an NTSC ratio of 67% and higher brightness white light, compared with the light source in example 1.

Example 10

The light emitting device 100 is manufactured in the same manner as the light emitting device shown in example 1, except that about 0.16 g of halogenoalkane Ca8MgSi4O16Cl2: Eu ((CAthe 7.5, Eu0,5) MgSi4O16Cl2), which has a peak emission of about 525 nm, 0.12 g of phosphor YAG (Y2,95Al5O12: Ce0,05), which has a peak emission around 560 nm and a broad emission spectrum, and about 0.2 g of a nitride phosphor CaAlSiBN3: Eu ((CA0,99, Eu0,01) AlSiBN3), which has a peak emission around 650 nm, are mixed with 3 g of silicone resin.

Figure 11 presents the emission spectrum of the obtained light-emitting device 100.

On the emission spectrum has a peak associated with the radiation of the light-emitting element 2 and the fuzzy maximum associated with the emission of the phosphors 3A, 3B, 3C, without clearly nab udamage third peak.

The light emitting device has a very high color quality, in this case, the Ra value is 88.

The light source for illumination, produced using a light-emitting device similar to that shown in example 1 has an NTSC ratio of 66% and higher brightness white light, compared with the light source in example 1.

Example 11

The light emitting device 100 is manufactured in the same manner as the light emitting device represented by example 1, except that about 0,22 g halogenoalkane Cathe 7.85Eufor 0.3MgSi4,3O15,91Cl1,84that has a peak emission of about 515 nm, 0.2 g of phosphor YAG (Y2,95Al5O12: Ce0,05), which has a peak emission around 560 nm and a broad emission spectrum, and about 0.1 g of a nitride phosphor CaAlSiBN3: Eu ((CA0,99, Eu0,01)AlSiBN3), which has a peak emission around 650 nm, are mixed with 3 g of silicone resin.

On Fig presents the emission spectrum of the light-emitting device 100, which is manufactured as described above.

On the emission spectrum has a first peak around 450 nm, the second peak around 520 nm and a third peak around 630 nm.

Minimum relative intensity of the light beam between the second peak wavelength and the third peak wavelength is 97% relative to the considerable intensity of the light radiation at the third peak wavelength, which is lower relative intensity of the light radiation at the second peak wavelength.

Received quite a high value of Ra, constituting 89, which is indicative of high quality colour rendering.

The light source for illumination, produced using a light-emitting device similar to that shown in example 1 has an NTSC ratio of 68% and higher brightness white light, compared with the light source in example 1.

Industrial applicability

The present invention can be applied not only for lighting but also for the backlight display device such as a monitor, digital camera or printer where you want high quality colour rendering.

1. The light emitting device, comprising:
the light-emitting element;
a red phosphor formed from a nitride phosphor, the red phosphor emits light when excited by the light emitted from the light-emitting element;
the green phosphor formed from halogenoalkane, while the green phosphor emits light when excited by the light emitted from the light-emitting element; and
the phosphor YAG (yttrium aluminium garnet)that emits visible light when excited by the light emitted from the light-emitting element.

2. The light emitting device according to claim 1, the spectrum of the radiation is of which has a first peak at a wavelength of from 440 to 470 nm, the second peak at a wavelength from 510 to 550 nm and a third peak at a wavelength of from 630 to 670 nm, the minimum relative intensity of the light beam between the second peak wavelength and the third peak wavelength is more than 80% of the lesser of the relative intensities of the light emission in the second and the third peak wavelength.

3. The light emitting device according to claim 1 or 2, in which the red phosphor activated Unit and represented by the following General formula (I):

where M1is at least one element selected from the group consisting of Mg, Ca, Sr and BA; this satisfied the relation: 0,056≤w≤9; x=1; 0,056≤y≤18 and 0≤z≤0.5 in.

4. The light emitting device according to claim 1 or 2, in which the green phosphor represented by the following General formula (II):

where M2is at least one element selected from the group consisting of Ca, Sr, BA, Zn and mn; M3is at least one element selected from the group consisting of Si, Ge and Sn; M4is at least one element selected from the group consisting of In, Al, Ga and In; X is at least one element selected from the group consisting of F, Cl, Br, and I; R is at least one element selected from rare earth elements such that S is contained as an the local item and are satisfied ratio: 0,0001≤y≤0,3; 7,0≤a<10,0; 3,0≤b<5.0 and 0≤s<1,0.

5. The light emitting device according to claim 1 or 2, in which the green phosphor represented by the following General formula (III):

where M5is at least one element selected from the group consisting of Ca, Sr, BA, Zn and mn; X is at least one element selected from the group consisting of F, Cl, Br and I; this satisfied the relation: 6,5≤x<8,0; 0,01≤y≤2,0, 3,7≤z≤4,3; 0<w≤0,5; a=x+y+1+2z+(3/2)w-b/2-(3/2)c; 1,0≤b≤1.9 and 0≤C≤3,0.

6. The light emitting device according to claim 1 or 2, in which the difference between the peak wavelength of light emitted svetoizluchateli element, and the peak wavelength of light emitted by the green phosphor is 80 nm or less.

7. The light emitting device according to claim 1 or 2, in which the YAG phosphor represented by the following General formula (IV):

where M6is at least one element selected from the group consisting of rare earth elements; and M7is at least one element selected from the group consisting of In, Al, Ga and In.



 

Same patents:

FIELD: physics.

SUBSTANCE: illumination device (1) comprises, for example, diodes LED (L1, L2, L3, L4) with separate emission spectra. Detectors D1, D2, D3, D4) can generate a vector of measurement signals (S1, S2, S3, S4) which represent light output of one active light emitter. Further, based on a linear relationship obtained during the calibration procedure, the characteristic value of the light output of that light emitter (L1, L2, L3, L4) is calculated using the measurement vector, wherein said characteristic value is based on the decomposition coefficient of an individual emission spectrum on basic functions.

EFFECT: improved method.

25 cl, 6 dwg

FIELD: physics.

SUBSTANCE: light-emitting system (1), comprising a radiation source (2), capable of emitting first light with at least a first wavelength spectrum, first fluorescent material (4), capable of absorbing at least partially the first light and emit second light with a second wavelength spectrum, second fluorescent material (8) capable of absorbing at least partially the first light and emit third light with a third wavelength spectrum, in which the first (4) or the second (8) fluorescent material is a polycrystalline ceramic with density higher than 97% of the density of monocrystalline material, and the corresponding other fluorescent material is a powdered luminophor with average particle size 100 nm <d50%<50 mcm.

EFFECT: invention enables to design an illumination system which emits white light with high colour rendering index, high efficiency, clearly defined colour temperature and good illumination quality, with correlated colour temperature, and enables regulation of the correlated colour temperature of the illumination system.

16 cl, 8 dwg

FIELD: physics.

SUBSTANCE: light-emitting diode lamp has an aluminium radiating housing with a power supply unit in its top part, formed by a hollow rotation body with external radial-longitudinal arms which form the outline of the lamp, fitted with internal radial-longitudinal arms with windows between them and a circular area on the butt-end of the external radial-longitudinal arms in its inner part, on which light-emitting diodes are tightly mounted. The design of the radiating housing with windows between the internal radial-longitudinal arms and guides in the top and bottom parts of the radiating housing, provides efficient convectional heat removal from powerful light-emitting diodes separated from each other by inner and outer streams. The light-emitting diode module has a light-emitting diode fitted into an optical lens and tightly joined to a printed circuit board through a flexible sealing element encircling the light-emitting diode, and the light-emitting diode is rigidly joined to a heat-removing copper plate through a hole in the printed circuit board.

EFFECT: stable light output and colour temperature over the entire service life, high light flux is ensured by a set of structural solutions of the radiating housing and compact light-emitting diode modules.

5 cl, 5 dwg

FIELD: physics.

SUBSTANCE: proposed nano radiator comprises 4-6 nm-dia nucleus of noble metal surrounded by two concentric envelopments. Envelopment nearest to nucleus represents an optically neutral organic layer with thickness of about 1 nm. Second 1-3 nm-thick envelopment is made up of J-aggregates of cyanine dyes. During electron excitation of metal nucleus plasmons, the latter actively interact with J-aggregate envelopment to excite cyanine dyes (Frenkel's excitons) and radiate light in visible range. Metal nucleus electrons may be excited by both photons and electrons.

EFFECT: high quantum output of luminescence and controlled spectrum of radiation in visible range.

3 cl, 1 dwg, 1 tbl

FIELD: physics.

SUBSTANCE: described light-emitting diode has an emitting crystal (crystals), a conical holder and a luminophor, where the holder is made from white material with angle of inclination to the wall equal to 60+5-10 degrees and height equal to 2-3 times the cross dimensions of the crystal. The walls of the holder are covered by a layer of a transparent polymer in which luminophor is distributed. The cavity of the holder is completely filled with a transparent polymer with a flat (or almost flat) surface covered by a layer of polymer in which luminophor is distributed. The invention enables design of light-emitting diodes which emit white light with luminous efficacy of up to 120 lm/W.

EFFECT: high luminous efficacy.

5 cl, 1 dwg, 1 tbl

FIELD: electricity.

SUBSTANCE: manufacturing method of semiconductor item having composite semiconductor multi-layer film formed on semiconductor substrate, according to invention, involves the following: preparation of element including layer (1010) removed by etching, composite semiconductor multi-layer film (1020), insulating film (2010) and semiconductor substrate (2000) on composite semiconductor substrate (1000), and having the first groove (2005) which passes through semiconductor substrate and insulating film, and groove (1025) in semiconductor substrate, which is the second groove provided in composite semiconductor multi-layer film so that it is connected to the first groove, and etching agent contacts the layer removed by etching as to the first groove and the second groove, and thus, removed layer is etched to separate composite semiconductor substrate from the above element.

EFFECT: increasing yield ratio and simplifying manufacturing procedure.

28 cl, 15 dwg

FIELD: machine building.

SUBSTANCE: procedure consists in injection of gas source of nitrogen and gas source of gallium into reactor for growth of layer of gallium nitride. Also, injection of gas- the source of nitrogen and gas - the source of gallium includes injection of gas containing atoms of indium at temperature from 850 to 1000°C so, that vacant centre of surface defining a cavity formed on a grown layer of gallium nitride is united with atoms of gallium or atoms of indium for filling the cavity. Internal pressure in the reactor is from 200 to 500 mbar.

EFFECT: improved surface morphology of gallium nitride layer due to reduced amount of cavities formed on it surface; device possesses improved working characteristics.

12 cl, 12 dwg

FIELD: physics.

SUBSTANCE: electroluminescent device has at least one electroluminescent light source (2) for emitting primary radiation, preferably having wavelength between 200 nm and 490 nm, and at least one light-converting element (3), lying on the beam path of the primary radiation for partial absorption of the primary radiation and emitting secondary radiation, where the dimension of the said light-converting element (3) in the direction (5) of the primary radiation is less than the average scattering length of primary radiation in the light-converting element (3).

EFFECT: invention enables design of an electroluminescent device with conversion by a luminophor, which is characterised by high attenuation coefficient of the apparatus combined with a colour temperature which is as independent from the viewing angle as possible.

10 cl, 4 dwg

FIELD: chemistry.

SUBSTANCE: semiconductor light-emitting device has an n-type region, a p-type region; a III-nitride light-emitting layer between the n- and p-type regions. The III-nitride light-emitting layer is doped to concentration of dopants between 6 × 1018 cm-3 and 5 × 1019 cm-3 and has III thickness between 50 Å and 250 Å; where the III-nitride light-emitting layer is configured to emit light having a maximum on wavelength higher than 390 nm, and content of InN in the light-emitting layer is gradient content. The invention also discloses four versions of the III-nitride light-emitting device having a light-emitting area with a double heterostructure.

EFFECT: high efficiency with high current density.

46 cl, 3 tbl

FIELD: physics.

SUBSTANCE: disclosed method of producing nanocrystalline silicon involves a sintering reaction at temperature of approximately 800 K of finely ground magnesium silicide and aerosil with subsequent dissolving and washing off magnesium oxide in an acidified aqueous solution and then cleaning nanocrystalline silicon by depositing ethanol and dissolving in trichloromethane. The invention enables to obtain nanocrystallin silicon, having stable, bright luminescence, maximum intensity of which can be shifted to the 750-550 nm range, and also enables to obtain nanocrystalline silicon particles which retain luminescence properties at high temperatures of up to 650 K in bulk without using expensive and highly flammable substances.

EFFECT: stable, bright photoluminescence of silicon in the visible spectral region in bulk, which facilitates use of this material in medicine and biology for fluorescent diagnosis, photodynamic and photothermal therapy, photochemical sterilisation of blood banks, as well as in ecology for purifying water from organic contaminants and pathological microflora.

2 dwg

FIELD: semiconductor emitting devices.

SUBSTANCE: proposed light-emitting diode based on nitride compounds of group III metals, that is aluminum, gallium, and indium (AIIIN), includes p-n junction epitaxial structure disposed on insulating substrate and incorporating n and p layers based on solid solutions of group III nitrides AlxInyGa1 - (x + y)N, (0 ≤ x ≤ 1, 0 ≤ y ≤ 1), as well as metal contact pads for n and p layers disposed on side of epitaxial layers, respectively, at level of lower epitaxial n layer and at level of upper epitaxial p layer. Projections of light-emitting diode on horizontal sectional plane, areas occupied by metal contact pad for n layer, and areas occupied by metal contact pad for p layer are disposed on sectional plane of light-emitting diode in alternating regions. Metal contact pad for n layer has portions in the form of separate fragments disposed in depressions etched in epitaxial structure down to n layer; areas occupied by mentioned fragments in projection of light-emitting diode onto horizontal sectional plane are surrounded on all sides with area occupied by metal contact pad for p layer; fragments of metal contact pad for n layer are connected by means of metal buses running over metal contact pad insulating material layer applied to portions of this contact pad over which metal buses are running.

EFFECT: enhanced output optical power and efficiency of light-emitting diode.

3 cl, 3 dwg

FIELD: devices built around diodes emitting blue and/or ultraviolet light.

SUBSTANCE: proposed light source emitting light in ultraviolet or blue light region (from 370 to 490 nm) and capable of producing high-efficiency white light affording control of luminance temperature within comprehensive range has light-emitting component that emits light in first spectral region and phosphor of group of optosilicate alkali-earth metals and that absorbs part of source light and emits light in other spectral region. Novelty is that phosphor used for the purpose is, essentially, europium activated bivalent optosilicate of alkali-earth metal of following composition: (2-x-y)SrO · x(Bau, Cav)O · (1-a-b-c-d)SiO2 ·aP2O5bAl2O3cB2O3dGeO2 : yEu2+ and/or (2-x-y)BaO · x(Sru, Cav)O · (1-a-b-c-d)SiO2 ·aP2O5bAl2O3cB2O3dGeO2 : yEu2+.

EFFECT: enhanced efficiency, enlarged luminance temperature control range.

14 cl, 10 dwg

FIELD: measurement technology.

SUBSTANCE: porous-structured semiconductor materials are modified by recognition element and exposing to electromagnetic radiation carries out photoluminescence reaction. Recognition elements that can be chosen from bio-molecular, organic and non-organic components interact with target to be subject to analysis. As a result, the modulated photoluminescence reaction arises.

EFFECT: improved sensitivity.

31 cl, 13 dwg

FIELD: structural components of semiconductor devices with at least one potential or surface barrier.

SUBSTANCE: proposed device that can be used, for instance, in railway light signals built around light-emitting diodes has one or more photodetectors and set of optical filters additionally disposed on substrate. Each photodetector has its p region connected to its respective wire lead through contact pad; wire lead is passed through substrate hole and insulated from the latter; its n region is connected to its respective wire lead by means of conductor provided with metal or metal-plated contact made in the form of ring segment, all segments being integrated into ring by means of insulating inserts. Set of optical filters having similar or different spectral filtering characteristics is formed by parts of hollow inverted truncated cone whose quantity equals that of photodetectors; all parts are integrated through insulating gaskets into single hollow inverted truncated cone. Disposed on butt-ends of hollow inverted truncated cone are dielectric rings of which upper one has inner diameter equal to that of large base of truncated cone and outer diameter, to that of substrate. Dielectric ring has holes over its circumference for electrical connection of photodetector conductors and light-emitting chips to contacts in the form of ring segments.

EFFECT: ability of checking up device emission parameters within optical range and of varying indicatrix of emission.

3 cl, 2 dwg

FIELD: semiconductors.

SUBSTANCE: device has emitting surface, recombination area, not less than one passive layer, transparent for emission with hv energy, at least one of layers is made with n-type of conductivity and at least one of said layers is positioned between recombination area and emitting surface, not less than one heat-draining surface and node for connection to outer energy source. Concentration of free carriers (n) and width of forbidden zone (E1) in aforementioned passive layer match relations: where hv and Δhv0.5 - quant energy and half-width of spectrum of emission, formed in recombination zone, respectively, eV, and ndeg - concentration of carriers, at which degeneration of conductivity zone starts, cm-3.

EFFECT: increased radiation strength, increased spectral range of source.

12 cl, 12 ex, 6 dwg

FIELD: spectral-analytical, pyrometric and thermal-vision equipment.

SUBSTANCE: emitter has electro-luminescent diode of gallium arsenide, generating primary emission in wave length range 0,8-0,9 mcm, and also poly-crystal layer of lead selenide, absorbing primary emission and secondarily emitting in wave length range 2-5 mcm, and lead selenide includes additionally: admixture, directionally changing emission maximum wave length position as well as time of increase and decrease of emission pulse, and admixture, increasing power of emission. Photo-element includes lead selenide layer on dielectric substrate with potential barrier formed therein, and includes admixtures, analogical to those added to lead selenide of emitter. Optron uses emitter and photo-elements. Concentration of addition of cadmium selenide in poly-crystal layer of emitter is 3,5-4,5 times greater, than in photo-element. Open optical channel of Optron is best made with possible filling by gas or liquid, and for optimal synchronization and compactness emitter and/or photo-element can be improved by narrowband optical interference filters.

EFFECT: higher efficiency, broader functional capabilities.

3 cl, 3 tbl, 6 dwg

FIELD: semiconductor emitting devices.

SUBSTANCE: proposed semiconductor element that can be used in light-emitting diodes built around broadband nitride elements of AIIIBV type and is characterized in ultraviolet emission range extended to 280 -200 nm has structure incorporating substrate, buffer layer made of nitride material, n contact layer made of Si doped nitride material, active layer with one or more quantum wells made of nitride material, barrier layer made of Mg doped AlXGaI-XN, and p contact layer made of Mg doped nitride material; used as nitride material for n contact layer is AlyGaI-yN in which 0.25 ≤ V ≤ 0.65; used as nitride material of active layer is AlZGaI ZN, where V - 0.08 ≤ Z ≤ V - 0.15; in barrier layer 0.3 ≤ X ≤ 1; used as nitride material in p contact layer is AlwGa1 - wN, where V ≤ W ≤ 0.7; active layer is doped with Si whose concentration is minimum 1019 cm-3; width "d" of active layer quantum wells is 1 ≤ d ≤ 4 nm; molar fraction of Al on barrier layer surface next to active layer is 0.6 to 1 and further reduces through barrier layer width to its boundary with p contact layer with gradient of 0.02 to 0.06 by 1 nm of barrier layer thickness, barrier layer width "b" ranging within 10≤ b ≤ 30 nm.

EFFECT: enlarged ultraviolet emission range of semiconductor element.

1 cl, 1 dwg, 1 tbl

FIELD: semiconductor emitting devices.

SUBSTANCE: proposed semiconductor element that can be used in light-emitting diodes built around broadband nitride elements of AIIIBV type and is characterized in ultraviolet emission range extended to 240 -300 nm has structure incorporating substrate, buffer layer made of nitride material, n contact layer made of Si doped nitride material AlXIInX2GaI-XI-X2N, active layer made of nitride material AlVIInY2GaI-YI-Y2N, and p contact layer made of Mg doped nitride material AlZIInZ2GaI-ZI-Z2N; active layer is divided into two areas; area abutting against contact layer is doped with Si and has n polarity of conductivity; other area of active layer is doped with Mg and has p polarity of conductivity; molar fraction of Al (YI) in p area of active layer is continuously and monotonously reducing between its boundary with n contact layer and boundary with p area of contact layer and is within the range of 0.1 ≤ VI ≤ 1; difference in VI values at boundaries of active-layer n area is minimum 0.04 and width of forbidden gap in active-layer p area at its boundary with active-layer n area exceeds by minimum 0.1 eV the maximal width of n area forbidden gap.

EFFECT: enlarged ultraviolet emission range, enhanced inherent emissive efficiency, simplified design of light-emitting component.

1 cl, 1 dwg, 1 tbl

FIELD: semiconductor optoelectronics; various emitters built around light-emitting diodes.

SUBSTANCE: proposed light-emitting diode has chip covered with optical component made of translucent material whose outer surface is of aspherical shape obtained due to rotation of f(x) curve constructed considering optical properties of light-emitting chip and optical component material about symmetry axis of light-emitting diode; it is light-emitting surface. Curve f(x) in coordinate system whose origin point coincides with geometric center of light-emitting chip active area has initial point A0 disposed on ordinate axis at distance corresponding to characteristic size of light-emitting diode; used as this size is desired height of optical component or its desired diameter; active area is formed by plurality of points Ai (i = 1, 2..., n). Taken as coordinates of each point are coordinates of intersection point of straight line coming from coordinate origin point at angle αini to ordinate axis and straight line coming from preceding point Ai - 1 at angle Gi to abscissa axis drawn to point Ai - 1; αini is angle of propagation of iin light beam pertaining to plurality of beams emitted by light emitting chip and chosen between angles 0 and 90 deg.; angle Gi is found from given dependence.

EFFECT: ability of shaping desired light-beam emission directivity pattern.

1 cl, 3 dwg

FIELD: semiconductor optoelectronics; various emitters built around light-emitting diodes.

SUBSTANCE: proposed light-emitting diode has light-emitting chip covered by optical component made of translucent material whose outer surface is aspherical in shape due to rotation of curve f(x) built considering optical properties of light-emitting chip and optical component material about symmetry axis of light-emitting diode. This surface emits light and f(x) curve in coordinate system whose origin coincides with geometric center of active area of light-emitting diode has initial point A0 disposed on ordinate axis at distance corresponding to characteristic size of light-emitting diode which is, essentially, optical component height or its desired diameter, and is formed by plurality of points A, (i = 1, 2... n); coordinates of intersection point of straight line drawn from coordinate origin point at angle αini to ordinate axis drawn from preceding point Ai - 1 at angle Gi to abscissa axis drawn to point Ai - 1 are taken as coordinates of each of them;; αini is angle of propagation of iin light beam pertaining to plurality of beams emitted by light-emitting chip chosen between 0 and 90 deg. Angle Gi is found from given dependence. Angle αouti is found by pre-construction of directivity pattern DPin of beam emitted by light-emitting chip. Coordinates of A points are checked by means of light-emitting diode simulator that has optical component whose outline is formed by plurality of Ai points as well as light-emitting chip whose beam directivity pattern is DPin; this chip is used as distributed light source having three-dimensional emitting area whose size and appearance correspond to those of emitting area used in light-emitting diode of light-emitting chip. Light emitting points in light-emitting chip of simulator under discussion are offset relative to origin of coordinates within its emitting area; coordinates of Ai points are checked by comparing directivity pattern DPout and directivity pattern DPsim of beam emitted by light-emitting diode simulator, both displayed in same coordinate system. When these directivity patterns coincide, coordinates of points Ai function as coordinates of points forming curve f(x); if otherwise, coordinates of points Ai are found again, and DPoutj is given as directivity pattern DPout whose points are disposed above or below the latter, respectively, depending on disposition of directivity pattern DPsim below or above directivity pattern DPout in the course of check.

EFFECT: ability of proposed light-emitting diode to shape desired directivity pattern of light beam.

1 cl, 3 dwg

Up!