Method of producing fluid exhaust head

FIELD: process engineering.

SUBSTANCE: method of producing said head including silicon substrate and inlet channel comprises: producing silicon substrate including isolating layers on first surface and mask layers with etching holes substrate other surface. Note here that said insulating layer is located in section extending from position opposite section between adjacent mask layer holes, and producing holes by etching section of silicon substrate so that etched section extends to insulated layer section opposite aforesaid hole. Silicon substrate located between adjacent holes is subjected to etching so that secintion on its first surface may be thinner than that on its second surface.

EFFECT: higher hardness of thus produced head and higher efficiency.

5 cl, 35 dwg

 

BACKGROUND of INVENTION

The technical field to which the invention relates

The present invention relates to a method of manufacturing a head to release the liquid, which produces the liquid.

Description of the prior art

As one example of a method of manufacturing a head for the production of liquid-lined patent application of Japan No. N10-138478 discloses a method of anisotropic etching of a silicon substrate having a surface orientation of (110) to form the set of inlet holes which are through holes in the silicon substrate, and the simultaneous use of part of the silicon left between the inlet openings in the form of a beam element. It can be considered that by providing this beam element problem is solved, the strength reduction due to through-hole located in the silicon substrate.

However, in the above method, the beam elements having the same width, separate multiple inlet holes from each other in areas that extends from the back surface of the silicon substrate to its front surface. Thus, due to the presence of a beam element cannot sufficiently ensure the amount of parts with inlet holes, and re-filling fluid may be h is sufficient.

A brief summary of the invention

Therefore, the aim of the present invention is to provide a method of manufacturing a substrate, which can be used for heads to release fluid having high mechanical strength and effectiveness of reseeding.

A method of manufacturing a substrate for a head to release fluid using a silicon substrate containing an element generating energy, which generates energy used for the production of liquid on the side of the first surface, and the inlet opening for the supply of liquid to the element generating energy includes the following steps in order: the creation of a silicon substrate containing an insulating layer consisting of an insulating material on the first surface and the layer mask for etching, containing many holes on the second surface which is the back surface of the first mentioned surface, and an insulating layer located on the surface, continued from front holes to the position opposite the area between adjacent holes of the layer mask; and the formation of holes that must be the inlet holes corresponding to the set of neighboring holes by etching part of the silicon of the silicon substrate of the many holes using the m technology reactive ion etching, so etched area reaches the area of the insulating layer opposite the holes, when using layer masks for etching as a mask, and the silicon partition, disposed between adjacent holes, they corrode without leaving using the technology of reactive ion etching so that the area on the side of the first surface may be thinner than the area on the side of the second surface.

In accordance with the present invention it is possible to manufacture the substrate for heads to release fluid having high mechanical strength and effectiveness of reseeding.

Other features of the present invention will become clear from the following description of exemplary embodiments with reference to the accompanying drawings.

Brief description of drawings

Figa, 1B, 1C, 1D, 1E, 1F, 1G and 1H are schematic views in section, illustrating one example of a process of manufacturing the substrate for the head to release the fluid in accordance with one embodiment of the present invention.

Figure 2 is a schematic view illustrating the state in the process of manufacturing the substrate for the head to release the fluid in accordance with one embodiment of the present invention.

Figure 3 represents schematically the ID, illustrating the state in the process of manufacturing the substrate for the head to release the fluid in accordance with one embodiment of the present invention.

Figa, 4B, 4C, 4D, 4E, 4F, 4G and 4H are schematic views in section, illustrating one example of a process of manufacturing the substrate for the head to release the fluid in accordance with one embodiment of the present invention.

Figure 5 is a schematic view illustrating the state in the process of manufacturing the substrate for the head to release the fluid in accordance with one embodiment of the present invention.

6 is a schematic view illustrating the state in the process of manufacturing the substrate for the head to release the fluid in accordance with one embodiment of the present invention.

Figa, 7B, 7C, 7D, 7E, 7F, 7G and 7H are schematic views in section, illustrating one example of a process of manufacturing the substrate for the head to release the fluid in accordance with one embodiment of the present invention.

Fig is a schematic view in section, illustrating one example of a process of manufacturing the substrate for the head to release the fluid in accordance with one embodiment of the present invention.

Fig.9 performance, which provides a view in section to describe the phenomenon of the formation of the recesses, which takes place at the stage of dry etching.

Figure 10 is a schematic perspective view illustrating one example of the head to release the fluid in accordance with the present invention.

11 is a schematic view in section, illustrating one example of the head to release the fluid in accordance with the present invention.

Fig is a schematic view in section, illustrating one example of the head to release the fluid in accordance with the present invention.

Fig is a schematic view in section, illustrating one example of the head to release the fluid in accordance with the present invention.

Figa and 14C are schematic views in section to describe the state at the stage of etching.

Description of embodiments

Below will be described in detail preferred embodiments of the present invention in accordance with the attached drawings.

The present invention provides a method of manufacturing a substrate for a head to release the liquid, which contains a number of channels for the fluid formed in the silicon substrate, and beam elements, which are made of a material of a silicon substrate and formed between adjacent channels for the fluid. Many canelands the fluid formed in the longitudinal direction of the substrate. Beam element configured to connect the long sides of the substrate with each other. Because the channels for the fluid is beamed element, it is possible to eliminate the deformation of the substrate and it is possible to reduce the offset of the outlet. Beam element may also increase the mechanical strength and can eliminate damage during handling and installation.

The above beam element is designed as if dipped in the silicon substrate. In other words, the beam element is designed with content gap from the surface of a silicon substrate, and the upper part of the beam element and the surface of a silicon substrate to form a passage. Since the beam element is designed as if dipped in the silicon substrate, it is possible to increase the efficiency of re-filling heads to release liquid. Therefore, the head to release fluid containing a substrate manufactured in accordance with the present invention, is capable of properly printed signs and can record marks with high accuracy and high speed.

In the present invention the multiple channels for the fluid form through the operation of etching the silicon substrate from the back surface up until the etched hole reaches the stop layer etching (hereinafter in this document is ente also called insulating layer), possessing insulating properties, using the technology of reactive ion etching. Then form a beam element by the operation of additional education of the recesses, and removing part of the silicon substrate at the bottom side of the stop layer etching having insulating properties, using the technology of reactive ion etching, so as to force the adjacent channels for the fluid to communicate with one another.

In this paper, the principle of the present invention will be described below with reference to Fig.9. Figure 9 on the surface of the silicon substrate 901 is formed of a layer 902 of the termination of etching, which has a high rate of selectivity of the etching gas for etching and has insulating properties, such as a film of silicon oxide and a film of silicon nitride. In addition, on the rear surface of the silicon substrate 901 is formed mask 903 for etching containing the hole. As illustrated in Fig.9, when the silicon substrate 901 is etched from its back surface by using the technology of reactive ion etching, the silicon substrate 901 they corrode without leaving (there are formed recesses) in the direction of the side surface in the contact zone between the silicon substrate layer 901 and 902 of the termination of etching with the insulating properties, blah is odara electrostatic charge, as illustrated in Fig.9. Figure 9 shows the space 904, which is formed by removing part of the silicon substrate due to the formation of cavities.

In the present invention the substrate breaking, and beam element is formed as a result of applying this principle to the silicon substrate. Following this process will be described in more detail. The silicon substrate is etched from its back surface toward the stop layer etching having insulating properties, using the technology of reactive ion etching, and then subjected to etching in the transverse direction due to the phenomenon caused by the formation of cavities. When the reaction of the etching in the transverse direction continues, the adjacent channels for the fluid are connected to each other and forms a beam element. Beam element, which is formed in a silicon substrate in accordance with this method, has an upper part located lower than the surface of the substrate, which increases the cross-sectional area of the flow channel for the liquid. Thus, there may be decreased resistance to flow, and may be shortened period of time required to re-fill with fluid head to release the liquid.

Therefore, the method according the present invention makes it easy to form the surface for the head to release the liquid, containing beam element, the upper part of which is located lower than the surface of the substrate.

An insulating layer is located so that the upper side of the silicon substrate between the multiple channels for the fluid can be removed through the phenomenon of the formation of the recesses and the adjacent channels for the fluid can be connected to each other through a space formed. In addition, the insulating layer can be formed at least in areas of the silicon substrate, one of which corresponds to the upper side of the plot, which is formed beam element and the other of which corresponds to an area where the formed beam element in the surface hole channel for the fluid, which is formed by etching the silicon substrate up until the etched hole reaches the insulating layer.

In the present invention, it is desirable to simultaneously use the stop layer etching having electrical conductivity. Figure 9 has been shown an example in which the stop layer etching was insulating layer, however, when the stop layer etching (hereinafter in this document also referred to as conductive layer has electrical conductivity, the phenomenon of the formation of the recesses does not occur. In other words, when nepobedimosti silicon substrate has a layer of stopping etching, made of aluminum or gold, which Vitruvian less than the silicon substrate, and has a high electrical conductivity, there is an electrostatic charge due to ions in the contact zone of the substrate layer and the etching stop having electrical conductivity, and does not occur the phenomenon of the formation of the recesses. Using this principle, a conductive layer can be formed on the surface of the silicon substrate in the area in which it is undesirable appearance of the phenomenon of the formation of the recesses. In other words, prevents the occurrence of the phenomenon of formation of recesses in the reactive ion etching in the area in which is formed a conductive layer, and may be caused by the phenomenon of formation of holes in the plot, in which is formed an insulating layer.

The channel for the fluid and beam element perform with high accuracy through the use of a conductive layer and an insulating layer, and, thus, it is possible to accurately adjust the distance (hereinafter in this document called distance SN) between an element generating energy release and channel for the fluid, which communicates with the flow channel for the fluid, which ensures the uniformity of the characteristics of the frequency of release.

In addition, the opening to the channel from the fluid on the rear surface of the substrate can be made smaller, than the size of the enclosure in which the passage opening of the fluid formed using conventional technologies anisotropic etching. Thus, a wider area can be used as the site of the clutch in the above-mentioned back surface.

Below will be described exemplary embodiments of the present invention with reference to the drawings. In addition, in the description below, the substrate for heads for inkjet printing may be adopted as an example of application of the substrate to head to release the liquid, to describe. However, the scope of the present invention is not limited to this substrate for the head for ink-jet printing, and the present invention can also be applied to the substrate, which can be used for heads to release fluid as applied to the manufacture of biocrystal and printing electronic circuits. For example, the head to release the liquid, in addition to head for inkjet printing includes a cylinder for the manufacture of filter color channel.

The first option exercise

First will be described below, the substrate for the head to release fluid made in accordance with the present invention. Head for ink jet printing using the substrate made in accordance with the present invention, shown in Fi is.10-13. Figure 10 is a perspective view of the head for ink-jet printing, one part of which is cut out, and 11 represents a view in sectional view made along line a-a'shown in figure 10. Fig is a view in section, made along the line parallel to line a-a'shown in figure 10, in the area in which the formed beam element. Fig is a view in sectional view made along line-In', shown in figure 10.

Head for inkjet printing includes a silicon substrate 1, which is formed by many elements 14 generate energy release to generate pressure to release ink drops, as illustrated in figure 10-13. The silicon substrate 1 includes a semiconductor circuit including a transistor for actuation element 14 generate energy release contact pad for electrical connection of the printhead with the wall of the housing of the printing device and other elements formed on it, but to simplify the drawings, they are not shown. The substrate to head for inkjet printing includes a silicon substrate 1. The silicon substrate 1 contains the element 14 generate energy release, educated on it. The flow-through channel 13 to paint communicates with the outlet 15 and channel 5 for the fluid and made p and assistance layer 11, forming a flow channel plate with a hole), containing the outlet opening 15. On a silicon substrate 1 is formed of multiple channels 5 for supplying ink in the flow channel 13 to paint with education line in the longitudinal direction, and between each of the channels for supplying ink is formed by beam elements 6. Beam element 6 is designed in such a way that the upper part of the beam element recedes down from the surface of a silicon substrate to form a passage).

The second option exercise

Below will be described a method of manufacturing a substrate for a head to release the fluid in accordance with the present invention with reference to figa-3. In the description below will be described an example in which the layer forming the flow channel, and similar items are not made on a silicon substrate. However, the present invention is not limited to this particular example, and the layer forming the flow channel, and similar elements can be performed on a silicon substrate. In other words, you can examine the present invention as a method of manufacturing the head to release the liquid.

Figa-1H are views of a cross section image of the state at each stage of the method of manufacturing a substrate for a head to release the fluid in accordance with the second variant of the m implementation of the present invention, and figa-1D are views in section, corresponding Fig, which was described above. In addition, five-1H are views in section of the rear surface 50 of the substrate 1. Figure 2 is a schematic view illustrating the placement of the insulation layer 2 and the conductive layer 3 formed on the surface 51 of the silicon substrate 1.

First of all, on the surface 51 of the silicon substrate 1 to form an insulating layer 2 and the electroconductive layer 3, as illustrated in figa and 1E and figure 2. As illustrated in the drawings, an insulating layer 2 and the electroconductive layer 3 is made on a silicon substrate 1 so that the upper part of the plot, which is formed beam element may include a recess. The insulating layer 2 is formed at least on the upper sides of many areas, which is formed by beam elements, on a silicon substrate 1 along the longitudinal direction. Conductive layer 3 formed on the upper side wall surface of the channel for the fluid, which is formed at a later stage, with the exception of the wall surface that forms a beam element.

The materials of the insulating layer 2 include silicon oxide and silicon nitride.

As a material for the conductive layer 3 can be used, for example, Al, Ta, TiW, Au, Cu, and is one of the materials.

The insulating layer 2 or the conductive layer 3 can be performed using well known methods of producing bulk film by means of sputtering or the like and method of forming a pattern on a three-dimensional film by photolithography method or a similar method.

In this case, in order to cause the phenomenon of formation of holes in the plot near the surface 51 of the silicon substrate 1 and to remove the silicon in the relevant area, it is desirable that the insulating layer 2 was located in the area, which should vitrales by dry etching, as illustrated in figa. For example, on tiga, when the thickness of the silicon substrate 1 is equal to 625 μm, the value of X may be equal to 4 μm or more, preferably, can be equal to 10 μm or more and, more preferably, may be equal to 15 μm or more. In the air gap 52 formed by removing the silicon in the dry etching, the insulating layer 2 is in the area subjected to the dry etching, which is a phenomenon of the formation of the recesses under the insulating layer 2.

In addition, a conductive layer preferably made so as to reach the inner wall of the opening of the channel for supplying the liquid to the substrate surface, as illustrated in figv to prevent the phenomenon is obrazovaniya grooves through the conductive layer. For example, on figv the value of Y may be equal to 4 μm, or more preferably, may be equal to 10 μm or more and, more preferably, may be equal to 15 μm or more.

Then, as illustrated in figv and 1F, on the side of the rear surface 50 of the silicon substrate 1 to form a layer 4 of a mask for etching. Layer 4 mask for etching includes a hole 53, the corresponding hole channel for the supply of liquid to the rear surface, and the silicon surface is left unprotected due to the holes 53, becomes the initial surface reactive ion etching is carried out at a later stage.

In the above description, the order of the stage of formation of the insulating layer 2 and the conductive layer 3 and the stage of the formation of the layer 4 mask for etching is not limited to this particular example.

Then, as illustrated in figs and 1G, the silicon substrate 1 is etched from its back surface by using the technology of reactive ion etching until then, etched until the hole reaches the insulating layer 2 and the electroconductive layer 3, thus forming a number of holes 54 corresponding to each hole 53.

In this case, the technology of reactive ion etching in accordance with the present invention is a technology in which the logic directional etching using ions and a method to force a collision of particles with a plot, subjected to etching during the formation of electric charges. Technology reactive ion etching is a method of etching the substrate with accelerated ions, and the device consists of a plasma source that generates ions, and reaction chamber in which ions carry out etching of the substrate. For example, when the ion source is used the device for dry etching in inductively coupled plasma (inductively coupled plasma - ICP), which is able to create a plasma of high density, then the processes of coating and etching (in other words, the processes of deposition/etching) is carried out alternately and channel for the fluid is formed perpendicular to the substrate. In the process of deposition/etching as a gas for etching can be used, for example, gas SF6and as a gas for coating can be used, for example, gas C4F6. In the present invention, the channel for the supply of liquid can be formed via dry etching with use of the device with the ICP source plasma, but you can use the device for dry etching with a different type of plasma source. For example, you can also use the device containing the ion source based on electron cyclotron resonance (electron cyclotron resonance ECR).

As gas is La reactive ion etching, preferably, use a gas containing fluorine atom. For example, the gas preferably includes at least one gas SF6gas , CF4gas C4F8and gas CHF3. You can also use a mixture of these gases.

Then the silicon substrate is additionally etched using the technology of reactive ion etching, and the lower part of the insulating layer 2 of silicon walls 55, which separates the openings 54 from each other, is removed by the effect of formation of the recesses. Thus, the partition wall 55 breaks in approximately parallel direction to the substrate surface.

When the operation of the reactive ion etching is completed in this state, the surface 51 of the substrate on the side of the silicon septum 55 can be formed deepening with the ability to send the inner part of the partition wall 55, as illustrated in Fig.

When the operation reactive ion etching continue on, adjacent holes 53 are connected to each other and are formed channels 54 of the feed, which are connected with the formation of a single channel and beam elements 6, as illustrated in fig.1D and 1H.

In this case, with regard to the conditions of reactive ion etching, the gas flow speed SF6may be in the range from 50 to 1000 cm 3/min, gas flow rate C4F8may be in the range from 50 to 1000 cm3/min, and pressure of the gases may be in the range of from 0.5 to 50 PA. When these conditions are controlled in these ranges, the phenomenon of formation of the recesses may be called more efficiently.

The width of the beam element 6 (the distance between the channels for the fluid) may be within, for example, from 5 to 100 μm and, preferably, may be in the range of from 10 to 40 μm. When this width is 20 μm or less, adjacent channels for the fluid can more easily communicate with each other through the effect of formation of the recesses. When this width is 10 μm or more, can be effectively increased the mechanical strength of the substrate.

Figure 3 is a schematic view illustrating the opening of the canal for the supply of liquid on the surface of a silicon substrate, in which the effect of education recesses formed beam element. The plot is surrounded by two dashed lines, corresponds to the area in which is formed a conductive layer 3, and in this section the phenomenon of the formation of the recesses can be prevented.

The insulating layer 2 and the conductive layer 3 can be removed well-known manner. When the conductive layer is, for example, of Al, e is antropologii layer can be removed using a liquid mixture of phosphoric acid, nitric acid and acetic acid. When removing the insulating layer opens the inlet opening 53.

A third option exercise

Below will be described a third option implementation in accordance with the present invention with reference to figa-6. Figa-4H are views of a cross section image of each process, figa-4D are views in sectional view in the longitudinal direction in accordance with Fig, which was described above, and five-4H are schematic views when viewed from the bottom side of the substrate. Figure 5 is a schematic view illustrating the shape of the insulation layer and conductive layer, which is formed on the surface of a silicon substrate.

First of all, as illustrated in figa and 4E and 5, on a silicon substrate 1 to form an insulating layer 2 and the electroconductive layer 3. As illustrated in these drawings, an insulating layer 2 and the electroconductive layer 3 is formed on silicon substrate 1 so that only the upper part of the plot, which is formed beam element may include a recess, and an insulating layer 2 is formed at least on the upper sides of many areas, which is formed by beam elements, on a silicon substrate 1. In the insulating layer 3 is formed of a rectangular conductive layer 3. Power is routashi layer 3 and the hole 53 of the layer 4 mask for etching positioned to be opposite to each other.

Then you can run the stages similar to the stages in the first embodiment. 6 is a schematic view illustrating the opening of the canal for the supply of liquid on the surface of a silicon substrate, in which the beam element is formed as a result of the effect of formation of the recesses. Areas surrounded by dashed lines, correspond to the electrically conductive layer 3, and in the relevant sections of the phenomenon of the formation of the recesses can be prevented. As illustrated in the second and third options of implementation, the area in which occurs the phenomenon of the formation of the recesses can be controlled by placing a conductive layer and an insulating layer.

The fourth option exercise

Figa-7G are schematic views of the process for the image of the example method, after the formation of the insulating layer 2 and the electroconductive layer 3, as described in the third embodiment, for the formation of holes for fluid supply and a beam element in the state in which they are additionally formed form 10 of the flow channel for the liquid and the layer 11, forming a flow channel.

The thickness of the silicon substrate 1 may be within, for example, from 200 to 725 μm. In addition, there may be used the Ana silicon substrate, having the orientation of (100) crystal.

First of all, as illustrated in figa, on a silicon substrate 1 to form an insulating layer 2 and the electroconductive layer 3.

Film conductive layer 3 is formed by using Al, Ta, TiW, Au or Cu and similar materials, and the shape can be made by forming a pattern. The method of formation of the Al film includes, for example, a sputtering method. Method of forming a pattern includes: masking conductive layer 3 through a photolithography process using, for example, a positive resist based novolacs and etching the conductive layer 3 through the use of liquid mixture (for example, under the name S-6, manufactured by Tokyo Ohka Kogyo Co., Ltd.) phosphoric acid, nitric acid and acetic acid. For example, when the conductive layer is made of TA film is formed by a coating process and a conductive layer is removed by chemical dry etching (Chemical Dry Etching - CDE) after applying the mask. For example, when the conductive layer comprises TiW, Au or Cu, a conductive layer can be formed by way of electroplating coatings, which includes: the formation of the seed layer; masking the seed layer, the resist; plating the substrate. Conducting the second layer can also be formed by a method of forming pattern only on the seed layer, such as TiW.

As a material of the insulating layer 2, you can use silicon oxide, silicon nitride, and similar material. For example, a film of silicon nitride may be formed by chemical deposition from the vapor phase at low pressure (Low Pressure Chemical Vapor Deposition - LPCVD), after a conductive layer formed in the above way. Then can be formed in the insulating layer 2 by a process of photolithography and reactive ion etching using a gas of CF4. When the insulating layer 2 is composed of a silicon oxide film can be formed, for example, by the method of plasma chemical vapour deposition. The film can delete the buffer hydrofluoric acid, after the film is formed by way of plasma chemical deposition from the vapor phase.

Then polyethylenepropylene which the resist is sensitive to UV radiation, able to slip away, put in the form of a solution on the insulating layer 2 and the conductive layer 3 by using a method of coating by centrifugation, as illustrated in figv. This resist is exposed to UV radiation and are to form the shape 10 of the flow channel for the liquid.

Then epoxy polymer type cationic polymerization, which is a negative resist,is applied to the form 10 of the flow channel for the liquid, to form the layer, forming a flow channel plate with a hole) 11, which forms a flow channel for the liquid. In this negative resist may be formed outlet opening (not shown), exposing the negative resist to light through photomask containing the predetermined pattern, and being exposed resist. A negative resist, the corresponding section of the pads can be removed in the same way.

Then, as illustrated in figs, on the back surface of silicon substrate 1 form a layer mask for etching. As the material for the layer mask for etching can be used, for example, a positive resist based novolacs. Film layer mask for etching can also be formed by the film forming of silicon oxide films, silicon nitride films epoxy polymer or metal film using the technology of deposition from the vapor phase or technology sputtering.

Then, as illustrated in fig.7D form openings 54 by etching the silicon substrate from its rear surface to until the etched holes do not reach the insulating layer 2 and the electroconductive layer 3 using the technology of ion etching.

Then, as illustrated in Figi, process of reactive ion herbs is placed still farther, to delete a section of a silicon substrate in the lower part of the insulating layer by the effect of formation of the recesses to connect the adjacent holes 54 to each other and form a beam element 6. The area in contact with the insulating layer 2 partitions 55 between adjacent holes 54, is removed in the phenomenon of the formation of the recesses, and thus the adjacent holes 54 are connected to each other. Through the above steps form the inlet channel 5, containing beam element 6. In this example, as shown in Fig.9, the insulating layer contains an electrostatic charge in the contact area of the silicon substrate 1 and the insulating layer 2 under the influence of ions extracted through displacement, therefore, the silicon substrate is gradually they corrode without leaving (cut) in the direction of the lateral septum. On the other hand, the electrically conductive layer 3 does not contain an electrostatic charge in the contact area of the silicon substrate 1 and conductive layer 3, therefore, the phenomenon of formation of the recesses does not occur.

Then, as illustrated in fig.7F remove the exposed conductive layer 3 and insulating layer 2. As for the method of removal, when the conductive layer is made of Al, a conductive layer is removed, for example, through the use of a liquid mixture of phosphoric acid, sotnos acid and acetic acid. In this example, from the viewpoint of removal of Al, which is unprotected in the hole and has a high aspect ratio, removal, it is desirable to use a liquid having the lowest viscosity. When, for example, a conductive layer is made of Ta, a conductive layer can be removed by way of etching such as CDE. When, for example, electrically conductive layer comprises TiW, provide the Etchant is possible to use a liquid mixture of aqueous hydrogen peroxide solution or neutral ammonium fluoride and sulfuric acid or the like. When, for example, electrically conductive layer is composed of Au, as the provide the Etchant is possible to use a liquid mixture of iodine, potassium iodide and the IPA solution of cyanide of potassium or a similar tool. In addition, when, for example, electrically conductive layer comprises Cu as provide the Etchant can be used nitric acid, fluoric acid or a similar tool. The insulating layer includes silicon oxide or silicon nitride. When, for example, the insulating layer consists of silicon oxide, the insulating layer can be removed buffer hydrofluoric acid. When, for example, the insulating layer consists of silicon nitride, an insulating layer can be removed by CDE using a gas of CF4.

Then, as illustrated in fig.7G, remove the form 10 Protocol the channel for the liquid. The form 10 of the flow channel for liquids, for example, is exposed to UV radiation and immersed in metallated to which is applied the ultrasonic wave.

For information, these substrates can be created in large quantities and at the same time, although this is not specifically illustrated, on a silicon wafer comprising a silicon substrate 1. At the end of the substrate cut from the plate by separating plates on the crystals, and they can be used as heads for release of liquid.

Although the present invention is described with reference to exemplary embodiments of the exercise, you should understand that the invention is not limited to the described exemplary embodiments of the implementation. The volume of the following claims must comply with the broadest interpretation so as to encompass all such modifications and equivalent structures and functions.

1. A method of manufacturing a substrate for a head for the production of a liquid containing a silicon substrate which includes an element generating energy, which generates energy used for the production of liquid on the side of the first surface, and the inlet channel for feeding the liquid to the element generating energy, comprising the following steps in order:
creating a silicon substrate that includes an insulating SL is th, consisting of an insulating material on the first surface and the layer mask for etching, with many holes on the second surface, which is the rear surface of the first surface, and an insulating layer is located in the area, continuing from the position opposite to the inner part of the hole to the position opposite the area between adjacent holes of the layer masks;
and the formation of holes that must be the inlet channels corresponding to the set of neighboring holes, through vitravene part of the silicon of the silicon substrate of the many holes using the technology of reactive ion etching, so that the etched area reaches the site opposite the inner side holes of the insulating layer, using layer masks for etching as a mask, and the silicon partition, disposed between adjacent holes is etched using the technology of reactive ion etching, so that the area on the side of the first surface may be thinner than the area on the side of the second surface.

2. The method according to claim 1, in which the silicon substrate is etched using the technology of reactive ion etching, so that adjacent openings are separated from each other by a partition wall on the side of the second surface is communicated with each other on the side of the first surface.

3. The method according to claim 1, wherein a gas for etching, which is used in the technology of reactive ion etching, includes a compound containing a fluorine atom.

4. The method according to claim 3, in which the gas to the fluorocarbon base includes at least one gas SF6gas SF4gas C4F8and gas CHF3.

5. The method according to claim 1, in which the area on the side of the first surface of the silicon partition is refined in the effect of formation of the recesses.



 

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19 cl, 14 dwg

FIELD: technological processes.

SUBSTANCE: invention is related to head that ejects liquid, which carries out printing by means of drops ejection onto carrier, device that ejects liquid and method of liquid ejection. Liquid-ejecting head, in which liquid is ejected from ejection channel due to application of energy to liquid, besides ejection channel comprises one ledge having convex shape and arranged inside ejection channel, the first area for maintenance of liquid surface, which must be related to liquid in the form of column stretched outside from ejection channel, when liquid is ejected from it, and, in condition when the first area is created, the second area, to which liquid must be sucked in ejection channel in direction opposite to direction of liquid ejection, and which has hydraulic resistance that is lower than hydraulic resistance of the first area, at the same time the first area is created in direction, in which ledge shape convexity is inverted from distal end of ledge, and the second area is created on both sides from ledge.

EFFECT: possibility to arrange moment of ejected liquid separation as occurring earlier and to reduce tail of flying drop of liquid.

19 cl, 37 dwg

FIELD: printing.

SUBSTANCE: manufacturing method of head substrate for fluid ejection represents provision of silicon substrate containing on its surface layer of etching mask, which has opening, the formation of the first deepening in surface of the silicon substrate by means of anisotropic etching, the formation of the second deepening containing opening in the surface of the first deepening, thereby opening goes in the direction of the other surface of the silicon substrate, being inverse surface to the surface of a silicon substrate and the formation of the inlet channel by anisotropic etching of silicon substrate from surface having the second deepening. Fluid ejection head contains silicon substrate having element of energy generation on its surface that is configured with possibility to generate energy for liquid ejection and the inlet channel for liquid supply to the element of energy generation.

EFFECT: invention provides stable manufacturing of substrate for fluid ejection heads with form accuracy and high efficiency of technological process.

7 cl, 17 dwg

The invention relates to a manufacturing device for inkjet printing

FIELD: printing.

SUBSTANCE: manufacturing method of head substrate for fluid ejection represents provision of silicon substrate containing on its surface layer of etching mask, which has opening, the formation of the first deepening in surface of the silicon substrate by means of anisotropic etching, the formation of the second deepening containing opening in the surface of the first deepening, thereby opening goes in the direction of the other surface of the silicon substrate, being inverse surface to the surface of a silicon substrate and the formation of the inlet channel by anisotropic etching of silicon substrate from surface having the second deepening. Fluid ejection head contains silicon substrate having element of energy generation on its surface that is configured with possibility to generate energy for liquid ejection and the inlet channel for liquid supply to the element of energy generation.

EFFECT: invention provides stable manufacturing of substrate for fluid ejection heads with form accuracy and high efficiency of technological process.

7 cl, 17 dwg

FIELD: technological processes.

SUBSTANCE: invention is related to head that ejects liquid, which carries out printing by means of drops ejection onto carrier, device that ejects liquid and method of liquid ejection. Liquid-ejecting head, in which liquid is ejected from ejection channel due to application of energy to liquid, besides ejection channel comprises one ledge having convex shape and arranged inside ejection channel, the first area for maintenance of liquid surface, which must be related to liquid in the form of column stretched outside from ejection channel, when liquid is ejected from it, and, in condition when the first area is created, the second area, to which liquid must be sucked in ejection channel in direction opposite to direction of liquid ejection, and which has hydraulic resistance that is lower than hydraulic resistance of the first area, at the same time the first area is created in direction, in which ledge shape convexity is inverted from distal end of ledge, and the second area is created on both sides from ledge.

EFFECT: possibility to arrange moment of ejected liquid separation as occurring earlier and to reduce tail of flying drop of liquid.

19 cl, 37 dwg

FIELD: printing industry.

SUBSTANCE: in method for arrangement of slot for supply of ink into semiconducting substrate for jet printing head, the first structural element is formed by means of multiple application of electric energy discharge to the first side of semiconducting substrate or by means of abrasive material application on the first side of semiconducting substrate, vibration is imparted to tool opposite to the first side, besides tool vibrates with a certain frequency and at a certain distance from the first side for formation of the first structural element, material of semiconducting substrate is removed from the second side for formation of the second structural element, besides at least part of the first and second structural elements crosses for formation of slot for ink feed, which passes through semiconducting substrate, and for removal method is used, which has been selected from group, including wet etching, dry etching, laser treatment, sand drilling, treatment with abrasive jet, rotary-vibration drilling, cutting with saws and mechanical treatment in machines.

EFFECT: fast formation of slot for ink feed in semiconducting substrate for jet printing head with low costs.

19 cl, 14 dwg

FIELD: printing industry.

SUBSTANCE: invention relates to method for liquid ejection to eject liquid from ejection channel by application of energy to liquid. Method includes the following stages: liquid is put in motion along ejection channel, which comprises, in cross section, relative to direction of ejection, two ledges inside the channel, then liquid surface that is arranged on both sides of two ledges and in area between two ledges in channel in direction opposite to direction of liquid ejection is pulled so that liquid arranged in specified area is joined to liquid in the form of column and is in contact with distal ends of two ledges, and them liquid in the form of column is separated from liquid arranged in specified area to eject liquid from ejection channel, so that liquid arranged in specified area is in contact with distal ends of two ledges.

EFFECT: invention makes it possible to reduce formation of satellites (secondary drops) and to accordingly improve quality of printing.

6 cl, 37 dwg

FIELD: printing industry.

SUBSTANCE: method to make a silicon substrate for a liquid-ejecting head, having the first surface, opposite to the second surface, includes the following stages: provision of a layer on the second surface of the silicon substrate, besides, this layer has a lower etching speed compared to silicon, when exposed to the silicon etchant; partial removal of the layer to open a part of the second surface of the silicon substrate, besides, this opened part surrounds at least one part of the layer; and moist etching of the specified layer and opened part of the second surface of the silicon substrate with application of the silicon etchant, in order to form a channel of liquid supply, stretching from the second surface to the first surface of the silicon substrate.

EFFECT: simplified formation of ink supply channel and reduced time of substrate making.

12 cl, 22 dwg

FIELD: process engineering.

SUBSTANCE: method of producing said head including silicon substrate and inlet channel comprises: producing silicon substrate including isolating layers on first surface and mask layers with etching holes substrate other surface. Note here that said insulating layer is located in section extending from position opposite section between adjacent mask layer holes, and producing holes by etching section of silicon substrate so that etched section extends to insulated layer section opposite aforesaid hole. Silicon substrate located between adjacent holes is subjected to etching so that secintion on its first surface may be thinner than that on its second surface.

EFFECT: higher hardness of thus produced head and higher efficiency.

5 cl, 35 dwg

FIELD: printing.

SUBSTANCE: method for processing a substrate of head for ejecting the fluid includes the stage of providing the substrate and the stage of providing a deepened section on the rear surface of the substrate by ejecting fluid in a linear form from the rear surface of the substrate, and by processing the rear surface of the substrate by laser light which passes along the fluid and in the liquid.

EFFECT: increased mechanical strength of the substrate.

9 cl, 10 dwg

FIELD: chemistry.

SUBSTANCE: photosensitive composition contains a cation-polymerisable compound, an acid photogenerator having an anionic part and a cationic part, as well as a salt having a cationic part having anyone of a quaternary ammonium structure or a quaternary phosphonium structure, and an anionic part. The anionic part of the salt is substituted with the anionic part of the first acid obtained from the anionic part of the acid photogenerator, to form a second acid having acid strength lower than that of the first acid. The cation-polymerisable compound is an epoxy resin. The acid photogenerator is at least a compound selected from a group comprising a sulphonic acid compound and other sulphonic acid derivatives, a diazomethane compound, a sulphonium salt, an iodonium salt, a sulphonimide compound, a disulphonic compound, a nitrobenzene compound, a benzoin tosylate compound, an iron arene complex, a halogen-containing triadine compound, an acetophene derivative, and a cyano group-containing sulfatoxim. The method of forming a pattern involves preparing a substrate on which the photosensitive composition is provided. A portion of the composition is then exposed to light to cure the exposed portion. The cured portion is then heated. The liquid ejection head has a part with an outlet channel for ejecting liquid. The part with the outlet channel is formed from cured material made from said composition.

EFFECT: invention increases heat resistance of the photosensitive composition and increases accuracy of forming a pattern.

13 cl, 4 dwg, 5 tbl, 9 ex

FIELD: printing.

SUBSTANCE: invention relates to an ink-jet printer in which the operation of restoring is performed in the print head for ejecting ink, and to a method for restoring the print head in the ink-jet printer. The ink-jet printer comprises a print head that can eject ink. The device also comprises a transportation unit, which serves for transportation of a recording medium along the transportation path passing the printing position in which printing can be performed on the printing carrier by the print head. The cutter which can cut the printing carrier. The restoring unit to perform operations of restoring the print head. The control unit to control the restoring operation performed by the restoring unit based on the number of passes which is the number of times that the cut-off part of printing carrier, which is cut off by the cutter, passes the printing position.

EFFECT: proposed invention provides the systematisation of the process of restoring the print head taking into account cutting of the carrier.

14 cl, 13 dwg

FIELD: printing industry.

SUBSTANCE: in the invention the ink jet printing head is designed, comprising an element provided with an ejection port for ejecting the ink. The said ink jet printing head additionally comprises a water-repellent layer comprising a cured product of the condensed product obtained by condensation of the hydrolyzable silane compound comprising an epoxy group, and a hydrolyzable silane compound comprising a perfluoropolyether group on the surface of the said element on the side where the ejection port comes.

EFFECT: improved quality of printing.

16 cl, 8 dwg, 1 tbl

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