Method to make substrate for liquid-ejecting head

FIELD: printing industry.

SUBSTANCE: method to make a silicon substrate for a liquid-ejecting head, having the first surface, opposite to the second surface, includes the following stages: provision of a layer on the second surface of the silicon substrate, besides, this layer has a lower etching speed compared to silicon, when exposed to the silicon etchant; partial removal of the layer to open a part of the second surface of the silicon substrate, besides, this opened part surrounds at least one part of the layer; and moist etching of the specified layer and opened part of the second surface of the silicon substrate with application of the silicon etchant, in order to form a channel of liquid supply, stretching from the second surface to the first surface of the silicon substrate.

EFFECT: simplified formation of ink supply channel and reduced time of substrate making.

12 cl, 22 dwg

 

Background of the invention

The scope of the invention

[0001] the Present invention relates to a method of manufacturing a substrate emit fluid head (substrate for a printhead ejection liquid) and, in particular, relates to a method of manufacturing a substrate for an inkjet printhead designed for use in inkjet printhead that ejects ink to a printing medium to perform printing.

Description of the prior art

[0002] One example of applying release fluid head is an inkjet printhead that ejects ink in the form of liquid droplets on a printing medium (typically paper) through the power to print. For inkjet print head, there is known a method in which a generating elements, which are mounted on the surface polozhki supplied with ink from the opposite surface of the substrate through a supply channel extending from the opposite surface through to the surface. A method of manufacturing a substrate for this type inkjet printhead is disclosed in patent application U.S. No. 2007/0212890.

[0003] In the manufacturing method described in patent application U.S. No. 2007/0212890 form a hole in the layer etching mask on the opposite surface of the silicon substrate, to amnii, open this hole, forming a recess by means of dry etching, laser or the like and the silicon substrate by wet etching etched from the recess to form a duct which passes through the substrate.

[0004] However, in the method described in patent application U.S. No. 2007/0212890, a hole is formed over the entire area of the opposite surface of the substrate corresponding to the feed channel, which requires to perform the formation of the picture pattern on the layer etching mask. For this, you need a photolithography process.

The invention

[0005] In view of the foregoing, the present invention has the advantage of providing a method of manufacturing a substrate for emitting fluid head, whereby the ink supply channel can be formed simply and in a relatively short time.

[0006] the Present invention provides a method of manufacturing a substrate for emitting fluid head and the substrate is a silicon substrate having a first surface and a second surface, which includes the following steps: providing a layer on the second surface of the silicon substrate and this layer has a lower etching rate than the silicon when exposed to provide the Etchant of silicon; partial removal of this layer to open the part W is Roy the surface of a silicon substrate, moreover, this open part surrounds at least one part of the layer; and wet etching the mentioned layer and the open part of the second surface of the silicon substrate using the provide the Etchant of silicon, to form a channel for fluid extending from the second surface to the first surface of the silicon substrate.

[0007] According to the present invention, the ink supply channel can be formed in a relatively short time.

[0008] Additional features of the present invention will become apparent from the following description of exemplary embodiments with reference to the attached drawings.

Brief description of drawings

[0009] Fig. 1 is a perspective view illustrating the structure of an inkjet printhead according to the first variant implementation.

[0010] Fig. 2A and 2B are views for describing the method of manufacturing an inkjet printhead according to the first variant implementation.

[0011] Fig. 3A and 3B are views for describing the method of manufacturing an inkjet printhead according to the first variant implementation.

[0012] Fig. 4A and 4B are views illustrating a state during the manufacturing process in the method of manufacturing an inkjet printhead according to the first variant implementation.

[0013] Fig. 5A and 5B are views for describing the state during the process slurry is in the method of manufacturing an inkjet printhead according to the first variant implementation.

[0014] Fig. 6A, 6B, 6C, 6D, 6E and 6F are views for describing a state during the manufacturing process in the method of manufacturing an inkjet printhead according to the first variant implementation.

[0015] Fig. 7A and 7B are views illustrating a state during the manufacturing process in the method of manufacturing an inkjet printhead according to the second variant implementation.

[0016] Fig. 8A, 8B, 8C, 8D and 8E are views illustrating a state during the manufacturing process in the method of manufacturing an inkjet printhead according to the second variant implementation.

Description of embodiments

[0017] Preferred embodiments of the present invention will now be described in detail in accordance with the accompanying drawings.

[0018] In the following described embodiments of the present invention with reference to the drawings. In the following description, an inkjet printhead is used as an example of throwing out the fluid head and the substrate of an inkjet printhead is used as the sample substrate emit fluid head. However, the present invention is not limited to this. Expelling the fluid head is applicable not only in print but also in various industrial fields, such as the formation of circuits and the substrate emit fluid in which the key can be used as a substrate, installed in this release fluid head.

[0019] In the following description of the relevant characteristics can be indicated on the drawings the same numbers, and their description is omitted.

[0020]The first option exercise

[0021] Fig. 1 is a perspective view illustrating an inkjet printhead according to the first variant implementation of the present invention. Inkjet printhead 10, illustrated in Fig. 1, includes a silicon substrate 1, on which a specified increment in two rows placed a generating elements 2 for generating energy used to eject liquid, such as ink. On a silicon substrate 1 formed of polyester-amide layer (not shown) as an adhesive layer. Moreover, on a silicon substrate 1 is formed a layer 6 of an organic film, which includes the side wall of the channel flow and the channels 11 of the ejection of ink above a generating elements 2. In addition, in the silicon substrate 1 between the rows of a generating elements 2 formed channel 13 of the ink supply. In addition, the formed channel currents ink connecting channel 13, the ink supply to each channel 11 of the ejection of ink.

[0022] an Inkjet printhead 10 is positioned so that its surface on which is formed the channels 11 release black is l, facing the imprinted surface of the printed media. When generating elements 2 apply pressure to the ink (liquid), which is filled in the channel flow of ink from the channel 13 of the ink supply system, ink droplets are ejected from the channels 11 of the ejection of ink. These ink droplets deposited on the print media, resulting in the image. Note that the term "shape image" includes not only a case of forming an image having a meaning, such as letters, characters, figures and signs, but also a case of forming images, which has no specific meaning, such as geometric patterns.

[0023] In the method of manufacturing according to one variant of implementation of the present invention, the layer of the etching mask is treated with a laser, dry etching or the like, to create a drawing template framework for the formation of an aperture of the ink supply channel, and then performing anisotropic etching of the crystal.

[0024] Fig. 3A and 3B are views in section, made according to line 2A-2A of the section in Fig. 1, for describing the method of manufacturing an inkjet printhead 10. Fig. 2A is a view in section, made according to line 2A-2A of the section in Fig. 1, and Fig. 2B is a top view of the opposite surface (second surface) of the silicon substrate 1. Note that Fig. 2A illustrates the state before those who, as to form a channel 13 of the ink supply. Fig. 4A is a view in section, made according to line 2A-2A of the section in Fig. 1, and Fig. 4B is a top view of the opposite surface (second surface) of the silicon substrate 1. Fig. 2A, 2B, 4A and 4B illustrate a state before forming the channel 13 of the ink.

[0025] As illustrated in Fig. 3A, prepare silicon substrate 1 having a layer 6 of an organic film as an element with the ejection channels with channels 11 release. A generating elements 2 are placed in two rows along the longitudinal direction of the silicon substrate 1 on the surface of the silicon substrate 1. A generating elements 2 consist of wiring made of Al or the like, a material with high resistance, such as TaSiN, or TaN, etc. moreover, on the surface of the silicon substrate 1 can be formed temporary layer 5 to specify the width of the opening of the channel 13 of the ink on this side surface. The use of Al as the material of the temporary layer 5 is effective as a temporary layer 5 can be formed at the same time as posting. After forming the temporary layer 5 to form an insulating protective film 3 so as to cover a generating elements 2 and the temporary layer 5. The insulating protective film 3 made of SiO, SiN or the like Insulating susanapanda 3 protects formed on the silicon substrate 1 wiring from ink and other liquids, and also serves as a stop etch layer when forming the channel 13 of the ink supply. Adhesion layer (not shown) and a layer 6 of an organic film provide on the insulating protective film 3 by using a photolithography process, thereby forming the channel flow of the ink channels 11 of the ejection of ink. The silicon substrate 1 also has on its opposite surface layer 4 etching mask. The etching rate of the layer 4 etching mask provide the Etchant of silicon is lower than the etching rate of silicon that provide the Etchant. Layer 4 etching mask may be sufficiently resistant to provide the Etchant of silicon, and on the opposite surface of the silicon substrate 1 to form at least one layer of the layer 4 etching mask. For example, as a layer 4 etching mask to form an insulating film such as SiO, a metal film such as Mo, Au, TiN, or Ti, an inorganic film and organic film. Use termicides film of SiO contributes to a shorter time of manufacture, since it can be formed on the surface at the same time as the insulating protective film 3.

[0026] In the case when on the opposite surface of the silicon substrate 1 during the operation of forming the layer 4 of the mask there is dust or the like, such dust may cause slight defect in SL is e 4 masks. In view of this, may be formed with the protective film 16, which, even if there is transferred (not shown)may cover such transferred. When forming the protective film 16, the selection may be made from such films as the organic film and inorganic film. However, from the viewpoint of adhesion to Si suitable film based on silicon, such as SiO, SiO2, SiN or SiC. The method of formation can be well-known method, such as coating by centrifugation or evaporation. In this embodiment, the SiO2 film is formed on the layer 4 etching mask firing, using polysilazane as a protective film 16 from the provide the Etchant TMAH (hydroxide of Tetramethylammonium), which is applicable in the present invention. Polysilazane forms a film of SiO2 react with water in the air, as shown by formula 1.

[0027] -(SiH2NH)- + 2H2O→SiO2+NH3+2H2(formula 1).

[0028] the Resistance to etching increases as the firing temperature increases. Taking into account the time of etching is suitable calcination at 250°C or higher.

[0029] alternatively, it may be adopted a structure that does not provide a protective film 16, as illustrated in Fig. 3B.

[0030] Further, in the area of the layer 4 of the etching mask corresponding to the channel 13 of the ink supply form the groove 7 with the Orme rectangular frame, as is illustrated in Fig. 2B, by removing the protective layer 16 and layer 4 etching mask with a laser. One frame corresponds to one channel 13 filing. Silicon, outdoor (naked) in the shape of the frame resulting from the removal of the protective layer 16 and layer 4 etching mask, surrounds the protective layer 16 and layer 4 etching mask inside the frame. In this embodiment, the laser processing is performed because the protective film 16. During operation of the laser processing as a laser source using a third harmonic wave (wavelength 355 nm) of YAG laser with excellent absorption capacity in the silicon and form the groove 7 under the conditions of output power of about 4.5 watts and a frequency of about 30 kHz. The groove 7 in the frame shape is formed so that it passes through a layer 4 etching mask and had a depth of about 10 μm on the opposite surface of the silicon substrate 1.

[0031] on the other hand, in the case of not providing the protective film 16, as illustrated in Fig. 3B, the groove 7 provided in the silicon substrate 1 so that it passes only through the mask layer 4, as illustrated in Fig. 4A.

[0032] Each size, illustrated in Fig. 2A and 4A, is defined as follows.

[0033] t denotes the thickness of the layer 4 etching mask, and T denotes the thickness of the silicon substrate 1. X denotes the Pope is acnee distance from the longitudinal center line 14 of the silicon substrate 1 to the center of the groove 7 (i.e. not the center of the frame). L denotes the width of the temporary layer 5, which is the width of the opening of the channel 13 of the ink on the surface of the silicon substrate 1 in the transverse direction of the silicon substrate 1. D denotes the depth of the groove 7 to the substrate.

[0034] the Thickness T of the silicon substrate 1 is about 600 μm to 750 μm, and the depth of the groove 7 is approximately from 5 μm to 20 μm. Instead of forming the grooves 7 in the silicon substrate 1, the silicon can only be opened by removal of the layer 4 masks in the shape of the frame by means of a laser. Once the silicon is open (naked), you may be etched from the opposite surface to the first surface using the provide the Etchant of silicon.

[0035] Fig. 5A and 5B are views illustrating another pattern of grooves 7. Fig. 5A is a view in section, made according to line 2A-2A of the section in Fig. 1, and Fig. 5B is a top view of the opposite surface of the silicon substrate 1 is covered with a layer 4 of etching masks. The groove 7 may be formed in the shape of the frame, as illustrated in Fig. 2B, and in the form of a grid (or ladder), as illustrated in Fig. 5B. The opposite side areas of the 7d grooves 7 are arranged inside the outermost sections 7a of the frame (which form a rectangle), thereby forming the shape of a lattice. Of the outer sections 7a of the frame cross-sections 7c (the length of which is bonacina as Q), which are connected with longitudinal sections 7b (the length of which is denoted as R)extending in the longitudinal direction of the substrate 1, approximately parallel opposite side portions 7d, and these opposite side areas of the 7d are connected with longitudinal sections 7b, as with the cross-sections 7c.

[0036] In the case where the groove 7 formed in the shape of a lattice, the time of laser processing and the etching rate when described later, the operation of etching varies according to the step P of the grooves 7 in the longitudinal direction of the silicon substrate 1 illustrated in Fig. 5B (i.e varies according to the distance between the cross sections of the grooves).

[0037] table 1 indicates the ratio of etching rates and time of laser processing concerning a pitch P of the grooves 7 in the longitudinal direction of the silicon substrate 1 in the application form grooves 7, illustrated in Fig. 5A and 5B, in the method of manufacturing according to this variant implementation. Here, R=15200 μm and Q=700 ám.

[0038]

[Table 1]
Step P (microns)
200300600800 1000
The etching rateAAAAB
The time of laser processingBBAAA

[0039] In Table 1, the etching rate is denoted as A, when the surface {100}, which is one of surface orientations of silicon, can be formed for 10 hours when described later operations etching. The etching rate is denoted as B, when, although the surface {100} and cannot be formed for 10 hours during the operation of etching the surface of the {100} can be formed when the etching reaches the temporary layer 5. At this time, the laser processing is denoted as A, when the time required for the formation of the groove 7 is not greater than (i.e. less than or equal to) twice the time of the formation of rakoobraznogo grooves 7, illustrated in Fig. 2B, and is denoted as B, when the time required for the formation of the groove 7, is more than twice the time of the formation of rakoobraznogo grooves 7. As indicated in Table 1, when the pitch P is smaller, the time of laser processing longer, but lying to the etching shorter. Accordingly, for the same etching rates as traditional, step P can be set to not more than 800 μm. In addition, the step P is preferably set at 600-800 microns, also taking into account the time of laser processing.

[0040] In the case of forming the grooves 7 in the form of a lattice, the groove 7 is not limited to the shape, divided in the longitudinal direction of the silicon substrate 1, as illustrated in Fig. 5B, and may take the form, divided in the transverse direction. Moreover, when the operation of the laser processing, the depth D of the grooves 7 preferably satisfies the following relative expression (1) (see Fig. 2A)

[0041] t≤D≤T-(X-L/2) tan 54,7°(1).

[0042] In the above-mentioned expression (1) t denotes the thickness of the layer 4 etching mask, and T denotes the thickness of the silicon substrate 1. X denotes the distance from the longitudinal center line 14 of the silicon substrate 1 to the center of the groove 7 formed along the center line 14. L denotes the width of the temporary layer 5 in the transverse direction of the silicon substrate 1.

[0043] When the above expression is satisfied, the etched region lies in the area of the temporary layer 5, so that the width of the opening of the channel 13 of the ink on the surface of the silicon substrate 1 can be set to the width L of the temporary layer 5. There is the case where W is in L temporary layer 5 is sufficiently large, and (X-L/2) becomes a negative value. In this case, the etched region reaches a temporary layer 5 regardless of the values of T and t. Therefore, the expression (1) is satisfied even in this case.

[0044] After the operation of the laser processing ends, perform an operation of etching with the formation of the channel 13 of the ink passing through the silicon substrate 1 from the groove 7 to the temporary layer 5 by means of anisotropic etching of the crystal. In the operation of etching as provide the Etchant used TMAH (hydroxide of Tetramethylammonium). The internal state of the silicon substrate 1 in the etching operation is described below with reference to Fig. 6A-6F. Fig. 6A-6F are views illustrating the internal state of the silicon substrate 1 during the operation of etching in the first embodiment. First formed surface {111} 21a, 21b, 21c and 21d, which are one of the surface orientations of silicon, decreasing in width in the direction from the opposite surface to the first surface of the silicon substrate 1. Dotted areas indicate the initial position of the groove 7. At this time, the layer 4 etching mask is etched in the direction perpendicular to the thickness direction of the silicon substrate 1 (see Fig. 6A).

[0045] When the etching proceeds further from the state illustrated in Fi is. 6A, the surface {111} 21a and 21b intersect with each other at their tops, and the surface {111} 21c and 21d intersect with each other at their tops, and it seems that the etching is no longer proceeds in the thickness direction of the silicon substrate 1. However, since the etching proceeds in the layer 4 etching mask in the direction perpendicular to the thickness direction of the silicon substrate 1, the anisotropic etching of silicon is going on again from these treated plots. In line with this, the etching proceeds in the thickness direction of the silicon substrate 1 and in the direction perpendicular to the thickness direction (see Fig. 6B). When the etching proceeds further from the state illustrated in Fig. 6B, the layer 4 etching mask, remaining between the groove 7, etched, and between the groove 7 is formed in the surface {100} 22 (see Fig. 6C). When the etching proceeds further from the state illustrated in Fig. 6C, the surface {100} 22 moves to the first surface of the silicon substrate 1 (see Fig. 6D) and, eventually, reaches the temporary layer 5. In this embodiment, the channel 13 of the ink is formed during the etching 1450 minutes. By controlling the thickness of the protective film 16 of polysilazane and speed etching using TMAH, the time until complete removal of the protective film 16 of polysilazane by TMAH can be Apasov is but with the time of etching of the silicon substrate 1. Thus, it can be achieved in a state in which the protective film 16 is removed at the moment when the silicon substrate 1 is formed a through hole (Fig. 6E). A temporary layer 5 is removed, thereby completing the operation of etching. Even in the case when the layer 4 etching mask is transferred, the impact of this micro-holes is small, if the etching time is short. Therefore, etching can be continued even after the protective film 16 of polysilazane removed. While the protective film 16 of polysilazane not necessarily want to delete. The decision to delete or not the protective film 16 may be made, whereas, for example, compatibility between the protective film 16 and the adhesive, which is applied on the opposite surface of the silicon substrate 1 when attaching the side opposite the surface to the supporting element made of alumina or the like for supporting the silicon substrate 1 when assembling an inkjet printhead.

[0046] Finally, plot the insulating protective film 3 that covers the opening of the channel 13, the ink supply, is removed by dry etching, as illustrated in Fig. 6F. Thus form a channel 100 of the flow of ink associated with the channel 13 filing.

[0047] In the above-mentioned operations of the silicon substrate 1 (on the spoon string printhead), where a plot of nozzles for ejection from the channels 11 of the ink ejection, the ink flowing out of the channel 13, the ink supply is completed. This silicon substrate 1 is cut and separated into chips by a saw for cutting semiconductor wafers or the like After each chip is made of electrical wiring for excitation generating elements 2, the connecting element of the tank with chip for ink supply. This completes the fabrication of the inkjet printhead 10.

[0048] According to this variant implementation, due to the formation of the groove 7 by the laser can be achieved by reducing the time is 240 minutes for each batch (or lot), compared with the traditional way to perform the operation of forming a picture of the pattern layer 4 etching mask by a photolithography process.

[0049]The second option exercise

[0050] Fig. 7A and 7B are views for describing the method of manufacturing an inkjet print head in this embodiment. Fig. 7A is a view in section of an inkjet printhead 12 in this embodiment, made according to the section line corresponding to line 2A-2A of the section in Fig. 1. Fig. 7B is a top view of the opposite surface of the silicon substrate 1 in the jet printhead 12. Note that the same structures as the inkjet printhead th the transportation 10, described in the first embodiment are given the same numbers, and their detailed description is omitted. Moreover, the inkjet printhead 12 is the same as inkjet printhead 10, the structure of the surface of a silicon substrate 1 and the aforementioned process of layering, and therefore their description is also omitted.

[0051] In the inkjet print head 12 is first formed groove 7 in the form of a grid during operation of the laser processing. It is the same as described in the first embodiment. That is, in the groove 7 of the opposite side areas of the 7d are inside the outermost sections 7a of the frame, thereby forming the shape of a lattice. Of the outer sections 7a of the frame cross-sections 7c (the length of which is denoted as Q), which are connected with longitudinal sections 7b (the length of which is denoted as R)extending in the longitudinal direction of the silicon substrate 1, approximately parallel opposite side portions 7d, and these opposite side areas of the 7d are connected with longitudinal sections 7b, as with the cross-sections 7c.

[0052] consequently, within the area surrounded by the outer sections of the frame 7a of the groove 7, formed guide holes 8 in the form of deep grooves, illustrated in Fig. 7A. Guide holes 8 are blind resp what NSTEMI, which pass through the layer 4 etching mask and the protective film 16, but end up inside the silicon substrate 1. In this embodiment, the part of the opposite side portions 7d is the guide holes 8. Moreover, the guide holes 8 are placed in two rows in the longitudinal direction of the silicon substrate 1, as illustrated in Fig. 7B. Note that the placement of the guide holes 8 and the number of the guide holes 8 are not limited, provided that the guide holes 8 formed within the opening (the opening on the side opposite the surface of the silicon substrate 1) channel 13 of the ink supply. However, when the guide holes 8 are placed so as to overlap the groove 7 (i.e. they are formed in the groove, as illustrated, provide the Etchant can easily enter into the guide hole 8 during the operation of etching, which contributes to more rapid anisotropic etching. In this case, the portion of the grooves 7, which are provided guide holes 8, extend to the first surface of the silicon substrate 1 is deeper than the portion of the groove 7, surrounding the guide holes 8. When the thickness of the silicon substrate 1 is about 700 μm to 750 μm, the depth D of the outermost sections of the frame groove 7 is from 5 μm to 20 μm. The groove 7 is formed by irradiation of a single pulse is whether multiple laser pulses of one plot (layer 4 etching mask on the opposite side of the substrate 1, and then irradiation with a laser in the same way position as the centre rejected essentially to half the diameter of the laser spot from the center of the previous pulse or pulses. These processes are repeated, so that holes with different positions of the centre continuously align, forming the groove 7. The depth DS of the guide holes 8 is between 350 μm and 650 μm, and the laser pulses with the number greater than the number during the formation of the groove 7, shoot to the same point of the substrate 1, so that the groove 7 is formed guide holes 8 in the form of a deep trench. In this embodiment, the groove 7 has areas overlapping with the guide holes 8, as illustrated in Fig. 7B, and is formed in the shape of a lattice with a pitch of 800 μm in the longitudinal direction of the silicon substrate 1. Here, the step is set to 800 μm, whereas the etching rate and time of laser processing, as described in the first embodiment (see Table 1).

[0053] After the operation of the laser processing ends, perform the etching operation, as in the first embodiment. When performing etching as provide the Etchant used TMAH, as in the first embodiment, and the channel 13 of the ink is formed on the protective film 16 (if present) to a temporary layer 5. The internal state of the cream is a Ieva substrate 1 during the operation of etching in this embodiment is described below with reference to Fig. 8A-8E. Fig. 8A-8E are views illustrating the internal state of the silicon substrate 1 during the operation of etching the second embodiment. First formed surface {111} 31a, 31b, 31c and 31d, decreasing in width in the direction from the opposite surface to the first surface of the silicon substrate 1. At the same time, the etching is continued from the guide holes 8 and the groove 7 in the direction perpendicular to the thickness direction of the silicon substrate 1. In addition, in the opening of the channel 13 of the ink on the side opposite the surface of a silicon substrate 1, are formed in the surface {111} 32a and 32b, increasing in width in the direction from the opposite surface to the first surface of the silicon substrate 1 (see Fig. 8A).

[0054] When the etching proceeds further from the state illustrated in Fig. 8A, the surface {111} 31b and 31c come in contact with each other, and the etching proceeds from formed at the contact vertices further in direction to the first surface of the silicon substrate 1. In addition, the surface {111} 31a and 32a intersect each other, and the surface {111} 31d and 32b overlap with each other, and it seems that the etching no longer continues in the direction perpendicular to the thickness direction of the silicon substrate 1 (see Fig. 8B).

[0055] When the etching proceeds further and the state, is illustrated in Fig. 8B, is formed in the surface {100} 33 between the guide holes 8, placed in two rows (see Fig. 8C). As etching continues, the surface {100} 33 moves to the first surface of the silicon substrate 1 and, eventually, reaches the temporary layer 5. After this temporary layer 5 is removed, thereby completing the operation of etching (see Fig. 8D).

[0056] Finally, plot the insulating protective film 3 that covers the opening of the channel 13, the ink supply side of the first surface of the silicon substrate 1 is removed by dry etching, as illustrated in Fig. 8E. Thus, the channel 100 of the flow of ink associated with the channel 13 filing. Then, the layer 4 etching mask may be removed.

[0057] In the above-mentioned operations of the silicon substrate 1 (substrate of an inkjet printhead), where a plot of nozzles completed. Then conduct the same processing as in the first embodiment, to complete the manufacture of an inkjet printhead 12.

[0058] According to this variant implementation, due to the formation of the guide holes 8 laser together with the groove 7 can be achieved a significant reduction in time compared with the traditional way to perform the operation of forming a picture of the pattern layer 4 etching mask pic what edstam photolithography process.

[0059] the First and second embodiments of describe the case where the groove 7 and the guide holes 8 formed after the first si substrate 1 formed element serving as a channel for the flow of ink (i.e. after the silicon substrate was formed a layer 6 of an organic film). However, the present invention is not limited to this procedure and element serving as a channel for the flow of ink can be formed on the first surface of the silicon substrate 1 after preparing the silicon substrate 1, where the formed groove 7, the guide holes 8 and layer 4 etching mask.

[0060] Although the present invention is described with reference to exemplary embodiments of the implementation, it should be understood that the invention is not limited to the disclosed exemplary embodiments of the implementation. The volume of the following claims must conform to the broad interpretation to include all modifications and equivalent structures and functions.

1. A method of manufacturing a substrate for emitting fluid head and the substrate is a silicon substrate having a first surface opposite a second surface, comprising stages, which are:
provide the layer on the second surface of the silicon substrate and this layer has a lower speed tra the population, than silicon when exposed to provide the Etchant of silicon;
partially remove the said layer so as to open the portion of the second surface of the silicon substrate, and this open part surrounds at least one part of the layer; and
perform wet etching using the above-mentioned layer as a mask, the open part of the silicon wafers provide the Etchant of silicon, to form a channel for fluid extending from the second surface to the first surface of the silicon substrate.

2. The method according to claim 1 in which the said layer is partially removed by irradiating the layer with a laser.

3. The method according to claim 1, in which the mentioned open part extends into the silicon substrate in the form of grooves.

4. The method according to claim 1 in which the said layer consists essentially of either silicon nitride or silicon oxide.

5. The method according to claim 1 in which the said layer is formed by thermal oxidation of the silicon substrate, causing oxidation of the silicon substrate.

6. The method according to claim 1, in which as provide the Etchant of silicon using aqueous solution of hydroxide of Tetramethylammonium.

7. The method according to claim 3, in which the groove includes at least one deeper plot that extends deeper into the silicon substrate, the groove surrounding this deeper plot.

8. The method according to claim 7, in which by mentioning is th at least one deeper the site is located within the outer surrounding area of the groove, which corresponds to one feed channel.

9. The method according to claim 1, in which the mentioned open part contains the shape of the frame.

10. The method according to claim 9, in which the shape of the frame is a rectangular frame.

11. The method according to claim 9, in which the mentioned open part consists of the shape of the frame.

12. The method according to claim 9, in which the mentioned open part contains the shape of the outer frame and at least one inner section extending across the frame.



 

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19 cl, 37 dwg

FIELD: printing.

SUBSTANCE: manufacturing method of head substrate for fluid ejection represents provision of silicon substrate containing on its surface layer of etching mask, which has opening, the formation of the first deepening in surface of the silicon substrate by means of anisotropic etching, the formation of the second deepening containing opening in the surface of the first deepening, thereby opening goes in the direction of the other surface of the silicon substrate, being inverse surface to the surface of a silicon substrate and the formation of the inlet channel by anisotropic etching of silicon substrate from surface having the second deepening. Fluid ejection head contains silicon substrate having element of energy generation on its surface that is configured with possibility to generate energy for liquid ejection and the inlet channel for liquid supply to the element of energy generation.

EFFECT: invention provides stable manufacturing of substrate for fluid ejection heads with form accuracy and high efficiency of technological process.

7 cl, 17 dwg

The invention relates to a manufacturing device for inkjet printing

FIELD: printing.

SUBSTANCE: manufacturing method of head substrate for fluid ejection represents provision of silicon substrate containing on its surface layer of etching mask, which has opening, the formation of the first deepening in surface of the silicon substrate by means of anisotropic etching, the formation of the second deepening containing opening in the surface of the first deepening, thereby opening goes in the direction of the other surface of the silicon substrate, being inverse surface to the surface of a silicon substrate and the formation of the inlet channel by anisotropic etching of silicon substrate from surface having the second deepening. Fluid ejection head contains silicon substrate having element of energy generation on its surface that is configured with possibility to generate energy for liquid ejection and the inlet channel for liquid supply to the element of energy generation.

EFFECT: invention provides stable manufacturing of substrate for fluid ejection heads with form accuracy and high efficiency of technological process.

7 cl, 17 dwg

FIELD: technological processes.

SUBSTANCE: invention is related to head that ejects liquid, which carries out printing by means of drops ejection onto carrier, device that ejects liquid and method of liquid ejection. Liquid-ejecting head, in which liquid is ejected from ejection channel due to application of energy to liquid, besides ejection channel comprises one ledge having convex shape and arranged inside ejection channel, the first area for maintenance of liquid surface, which must be related to liquid in the form of column stretched outside from ejection channel, when liquid is ejected from it, and, in condition when the first area is created, the second area, to which liquid must be sucked in ejection channel in direction opposite to direction of liquid ejection, and which has hydraulic resistance that is lower than hydraulic resistance of the first area, at the same time the first area is created in direction, in which ledge shape convexity is inverted from distal end of ledge, and the second area is created on both sides from ledge.

EFFECT: possibility to arrange moment of ejected liquid separation as occurring earlier and to reduce tail of flying drop of liquid.

19 cl, 37 dwg

FIELD: printing industry.

SUBSTANCE: in method for arrangement of slot for supply of ink into semiconducting substrate for jet printing head, the first structural element is formed by means of multiple application of electric energy discharge to the first side of semiconducting substrate or by means of abrasive material application on the first side of semiconducting substrate, vibration is imparted to tool opposite to the first side, besides tool vibrates with a certain frequency and at a certain distance from the first side for formation of the first structural element, material of semiconducting substrate is removed from the second side for formation of the second structural element, besides at least part of the first and second structural elements crosses for formation of slot for ink feed, which passes through semiconducting substrate, and for removal method is used, which has been selected from group, including wet etching, dry etching, laser treatment, sand drilling, treatment with abrasive jet, rotary-vibration drilling, cutting with saws and mechanical treatment in machines.

EFFECT: fast formation of slot for ink feed in semiconducting substrate for jet printing head with low costs.

19 cl, 14 dwg

FIELD: printing industry.

SUBSTANCE: invention relates to method for liquid ejection to eject liquid from ejection channel by application of energy to liquid. Method includes the following stages: liquid is put in motion along ejection channel, which comprises, in cross section, relative to direction of ejection, two ledges inside the channel, then liquid surface that is arranged on both sides of two ledges and in area between two ledges in channel in direction opposite to direction of liquid ejection is pulled so that liquid arranged in specified area is joined to liquid in the form of column and is in contact with distal ends of two ledges, and them liquid in the form of column is separated from liquid arranged in specified area to eject liquid from ejection channel, so that liquid arranged in specified area is in contact with distal ends of two ledges.

EFFECT: invention makes it possible to reduce formation of satellites (secondary drops) and to accordingly improve quality of printing.

6 cl, 37 dwg

FIELD: printing industry.

SUBSTANCE: method to make a silicon substrate for a liquid-ejecting head, having the first surface, opposite to the second surface, includes the following stages: provision of a layer on the second surface of the silicon substrate, besides, this layer has a lower etching speed compared to silicon, when exposed to the silicon etchant; partial removal of the layer to open a part of the second surface of the silicon substrate, besides, this opened part surrounds at least one part of the layer; and moist etching of the specified layer and opened part of the second surface of the silicon substrate with application of the silicon etchant, in order to form a channel of liquid supply, stretching from the second surface to the first surface of the silicon substrate.

EFFECT: simplified formation of ink supply channel and reduced time of substrate making.

12 cl, 22 dwg

FIELD: process engineering.

SUBSTANCE: method of producing said head including silicon substrate and inlet channel comprises: producing silicon substrate including isolating layers on first surface and mask layers with etching holes substrate other surface. Note here that said insulating layer is located in section extending from position opposite section between adjacent mask layer holes, and producing holes by etching section of silicon substrate so that etched section extends to insulated layer section opposite aforesaid hole. Silicon substrate located between adjacent holes is subjected to etching so that secintion on its first surface may be thinner than that on its second surface.

EFFECT: higher hardness of thus produced head and higher efficiency.

5 cl, 35 dwg

FIELD: printing.

SUBSTANCE: method for processing a substrate of head for ejecting the fluid includes the stage of providing the substrate and the stage of providing a deepened section on the rear surface of the substrate by ejecting fluid in a linear form from the rear surface of the substrate, and by processing the rear surface of the substrate by laser light which passes along the fluid and in the liquid.

EFFECT: increased mechanical strength of the substrate.

9 cl, 10 dwg

FIELD: chemistry.

SUBSTANCE: photosensitive composition contains a cation-polymerisable compound, an acid photogenerator having an anionic part and a cationic part, as well as a salt having a cationic part having anyone of a quaternary ammonium structure or a quaternary phosphonium structure, and an anionic part. The anionic part of the salt is substituted with the anionic part of the first acid obtained from the anionic part of the acid photogenerator, to form a second acid having acid strength lower than that of the first acid. The cation-polymerisable compound is an epoxy resin. The acid photogenerator is at least a compound selected from a group comprising a sulphonic acid compound and other sulphonic acid derivatives, a diazomethane compound, a sulphonium salt, an iodonium salt, a sulphonimide compound, a disulphonic compound, a nitrobenzene compound, a benzoin tosylate compound, an iron arene complex, a halogen-containing triadine compound, an acetophene derivative, and a cyano group-containing sulfatoxim. The method of forming a pattern involves preparing a substrate on which the photosensitive composition is provided. A portion of the composition is then exposed to light to cure the exposed portion. The cured portion is then heated. The liquid ejection head has a part with an outlet channel for ejecting liquid. The part with the outlet channel is formed from cured material made from said composition.

EFFECT: invention increases heat resistance of the photosensitive composition and increases accuracy of forming a pattern.

13 cl, 4 dwg, 5 tbl, 9 ex

FIELD: printing.

SUBSTANCE: invention relates to an ink-jet printer in which the operation of restoring is performed in the print head for ejecting ink, and to a method for restoring the print head in the ink-jet printer. The ink-jet printer comprises a print head that can eject ink. The device also comprises a transportation unit, which serves for transportation of a recording medium along the transportation path passing the printing position in which printing can be performed on the printing carrier by the print head. The cutter which can cut the printing carrier. The restoring unit to perform operations of restoring the print head. The control unit to control the restoring operation performed by the restoring unit based on the number of passes which is the number of times that the cut-off part of printing carrier, which is cut off by the cutter, passes the printing position.

EFFECT: proposed invention provides the systematisation of the process of restoring the print head taking into account cutting of the carrier.

14 cl, 13 dwg

FIELD: printing industry.

SUBSTANCE: in the invention the ink jet printing head is designed, comprising an element provided with an ejection port for ejecting the ink. The said ink jet printing head additionally comprises a water-repellent layer comprising a cured product of the condensed product obtained by condensation of the hydrolyzable silane compound comprising an epoxy group, and a hydrolyzable silane compound comprising a perfluoropolyether group on the surface of the said element on the side where the ejection port comes.

EFFECT: improved quality of printing.

16 cl, 8 dwg, 1 tbl

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