RussianPatents.com
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Method of producing polycrystalline cubic boron nitride. RU patent 2412111. |
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FIELD: process engineering. SUBSTANCE: invention relates to production of synthetic superhard materials, particularly, polycrystalline cubic boron at high pressure and temperature to be sued in chemical, electronic and other industries. Proposed method comprises preparing mix of wurtzite-like and cubic modifications in relation of 1:4 to 2:1, respectively, processing it in planet mill for mechanical activation and crushing to grain size not exceeding 1 mcm, forming and annealing the mix at 1400-1800°C and 7.0-9.0 GPa, keeping at annealing temperature for time defined by conditions of transition on boron nitride wurtzite modification into cubic one without recrystallisation, equal to 5-30 s. Accurate time of keeping at preset temperature and pressure is defined proceeding from necessity of preservation of 5 to 15% of wurtzite boron nitride amount in initial mix. EFFECT: lower temperature, pressure and duration of synthesis, improved mechanical and physical properties. 2 cl, 5 ex, 1 tbl
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Method of growing crystals of group iii metal nitrides / 2405867 Method of growing crystals of group III metal nitrides from a gas phase involves placing a substrate 12 into the top part of a reactor over a source of a group III metal 5 and feeding gas streams to the surface of the substrate 12 in a direction opposite the direction of force of gravity, each containing at least one chemically active gas and at least one carrier gas. To increase efficiency of the process, consumption of chemically active gases meets the following condition: Gv/GIII=5÷1000, where Gv is molar consumption of chemically active gases containing a group V element - nitrogen, for example ammonia, GIII is molar consumption of chemically active gases containing a group III metal. Each chemically active gas is mixed with at least one carrier gas until obtaining gas streams in which overall density of the gas mixture containing chemically active gas which contains a group III metal, is less than overall density of a gas mixture containing chemically active gas which contains a group V element - nitrogen. Such a ratio of densities of gas mixtures improves the structure of gas streams in the reactor and enables to eliminate vortex recirculating flow under the substrate. The obtained gas streams are then fed in the direction of the substrate 12 through annular channels 8, 9, 10, formed symmetrically about the axis of the reactor. |
Method of producing silver azide crystal whiskers / 2404296 Method is realised through slow evaporation of ammonia from 5% aqueous ammonia solution of fine-crystalline silver azide powder at normal conditions in a crystalliser through 0.5 mm diametre holes in a polyethylene film covering the crystalliser, at a rate of 0.407 g/day. The crystalliser containing the solution is placed between two electrodes in a non-contact electric field with strength of 100 - 106 V/cm. |
Method of producing cubic boron nitride, having light emission / 2394757 Invention relates to production of materials capable of intense emission of light in a broad spectral range under the effect of photo-, electron- and electro-excitation, where the emission is stable at high temperature, radiation and in chemically aggressive media. The invention can be used in making light emitters and radiation detectors. A growth mixture based on hexagonal boron nitride is mixed with activators - rare earth metal compounds whose melting point is lower than fusion point of cubic boron nitride, in amount of 0.05-15% of the weight of the growth mixture. The mixture is then exposed to high pressure and temperature. Cubic boron nitride is obtained in form of micropowder, powder, crystals and ceramic samples. Gadolinium compounds are used the activator to obtain light emission in the ultraviolet range; cerium compounds are used to obtain emission in the ultraviolet, blue and yellow ranges; samarium compounds are used for the orange range; neodymium, praseodymium, erbium, ytterbium or holmium compounds are used to obtain emission in the infrared range. To obtain cubic boron nitride having electroluminescence, sulphur or selenium is added to the mixture. |
Crucible for growth of volume single crystal of aluminium nitride (aln) / 2389832 Crucible for growth of volume single crystal of aluminium nitride includes graphite container 1 with cover 2 and seed 3. Inner surface of container 1 is lined with a layer of polycrystal source - pressed aluminium nitride 4 arranged in the form of ball segment comprising annular 5 external 6 and internal 7 segment surfaces. Besides centres of rotation of inner 7 and outer 6 segment surfaces O and O1 are located over each other and lie on a common axis of surfaces rotation, and annular surface 5 coincides with upper plane 8 of graphite container. Moreover, between outer surface of polycrystal ball segment and inner surface of graphite container there is a gasket 9 made of tantalum installed as coupled with these surfaces, and inner surface of cover 2 is equipped with a gasket 10 of tantalum foil coupled with it. Shape of polycrystal source is selected in the form of ball segment due to certain considerations. First of all, multiple points making inner surface of ball segment is equidistant from surface of seed, which provides a positive impact at evenness of grown crystal structure. Second, ball segment closes all inner surface of container, preventing mixing of graphite particles, from which container is made, with pairs of source components, and annular surface is located at the level of upper cut in container. Third, due to arrangement of outer and inner surfaces over each other, thickness of ball segment wall at the level of upper container cut is less than thickness of ball segment bottom. This condition is necessary to level temperature gradient and even heating of source, taking into account the fact that temperature at lower levels of container is always higher than at upper levels. Calculation of radii R1 and R in inner and outer surfaces of ball segment and their mutual location is done with account of such factors as temperature of heating element, thickness of container walls, distance from heating element to container walls, thickness of gasket, etc. Container lining may be performed directly in container by means of source material pressing in it, or a ball segment may be produced separately, on a special accessory, and may be installed into container, i.e. may be arranged as detachable. Installation of gasket 9 from tantalum prevents penetration of graphite from container into source vapours. |
Substrate for growing of epitaxial layers of gallium nitride / 2369669 Invention is related to electronic engineering, namely, to technology of materials for creation of information display and processing devices. As material of substrates used for growing of epitaxial layers of gallium nitride, a row of compounds is suggested - single crystals of intermetallides, selected from group that includes silicide of magnesium (MnSi), palladium silicide (Pd2Si), manganese stannate (Mn3Sn), iron stannate (Fe3Sn), vanadium phosphide (VP), aluminium zirconide (Zr3Al) with moderate melt temperatures. |
Facility for crystal growth / 2358044 Facility for growth of crystals out of gas phase, mainly nitrides of metals of III group, consists of vacuum-processed reactor 1, of device 2, which is installed inside reactor for fastening pad 3, of at least one source 4 of metal of III group containing metal of III group in liquid state, of at least one pressure tight input 5, connecting internal part of reactor with source of gas reagent supply, and of at least one device 8 for output gases from reactor. The facility additionally contains at least one vacuum-processed container 9 with metal of III group in liquid state; the container is assembled outside reactor 1, internal volume of which filled with gas is connected by vacuum-processed channel 11 with internal volume of reactor 1; communication between metal of III group in liquid state in container 9, located outside the reactor, and metal of III group in source 4, located inside the reactor, is facilitated by mode of communicating vessels with vacuum-processed channel 15 passing through vacuum-processed input 5 in vacuum-processed reactor 1; also container 9 with metal of III group in liquid state located outside reactor is intended to vertical displacement. |
Method of single-crystalline aluminium nitride growing / 2330905 Invention is related to growing of single crystals from vapors, in particular to growing of single crystals of aluminium nitride by condensation of evaporated or sublimated material. Method includes installation of base and aluminium vapors source opposite to each other in growing chamber, heating and maintenance of working temperatures of base and source. In order to clean base and aluminium vapors source from volatile admixtures, base and aluminium vapors source are preliminarily heated up to temperature of 1500÷700°C with pressure not exceeding 10-3 mm of mercury column. Then in order to suppress excess evaporation and exclude possibility of polycrystals growing, nitrogen is supplied to growing chamber until pressure of 0.9÷1 atm, afterwards heating is continued up to working temperature. |
Method of single-crystalline aluminium nitride growing and device for its implementation / 2330904 Invention is related to growing crystals from vapors, in particular to growing of aluminium nitride single crystals by condensation of evaporated and sublimated material. Method includes installation of base and aluminium vapors source opposite to each other in growing chamber, heating and maintenance of working temperatures. In order to balance atmosphere inside the growing chamber heating and maintenance of working temperatures is performed in atmosphere of aluminium and nitrogen vapors mixture from external side of growing chamber. For that purpose device for single-crystalline aluminium nitride growing additionally contains external crucible with cover for installation of growing chamber in it, in which aluminium vapors source is placed. |
Method of nitride monocrystal growth on silicon plate, nitride semi-conductor light emitting diode, which is produced with its utilisation, and method of such production / 2326993 When nitride monocrystal is grown, at first the silicon base is prepared, which has surface with crystallographic orientation (111), the first nitride buffer layer is formed on it, on which amorphous oxide film is created, then the second nitride buffer layer is formed on amorphous oxide film is formed, and nitride monocrystal is formed on the second nitride buffer layer. Also light emitting device is given and method of its manufacturing. |
Gallium nitride monocrystal growing method / 2315825 Invention relates to technology of growing semiconductor materials on substrate through chemical reactions of reactive gases and can be used in semiconductor industry. Method involves supplying hydrogen chloride to container with gallium source followed by supplying gas mixture containing gaseous gallium chloride, ammonia, and carrying gas to the surface of substrate. To increase gallium nitride monocrystal growth rate and simultaneously improve quality of gallium nitride monocrystal, supplying hydrogen chloride to container with gallium source is accompanied with passing carrying gas to additional gallium source. Then, aforesaid gas mixture is passed to the surface of substrate. To prevent possibility of getting particles on growth surface and to increase stability of process parameters, temperature of container with gallium source, to which hydrogen chloride is supplied, is maintained above 700°C, temperature of additional gallium source is maintained from 1100 to 1400°C, and temperature of gas phase in reactor as well as reactor wall temperature are maintained by 100-200°C higher then substrate temperature. |
Current conducting suspension for rod-shaped substrates / 2409709 Current conducting suspension for rod-shaped substrates has a holder 1 with a socket 2 in form of a channel which tapers downwards and has a vertical wall 4 and an insert 3 with a vertical wall 6 opposite the wall 4 of the socket, the space between which is the working jaw of a V-shaped clamping mechanism formed by the holder and the insert. Rigidity of the structure of the suspension and possibility of obtaining high holding force in the V-shaped clamping mechanism with uniform clamping on the entire surface of the contact of the clamped rod-shaped substrate with the suspension enables to increase carrying capacity of the suspension. Furthermore, due to that the channel of the socket tapers downwards, the holding force increases proportionally under the effect of the increasing weight of the grown rod in the V-shaped clamping mechanism. |
Method of producing alumina nanoceramic / 2402506 Invention relates to production of optical materials which are transparent in the infrared (IR) spectrum with high transmission coefficient and high mechanical strength. The method involves preparation of a colloidal solution from finely dispersed γ-Al2O3 powder, from which a transparent supernatant - sol is extracted, which, through ultrasonic treatment, heating, acidification and thickening, is brought into a state gelling takes place after several days - formation of a viscous sol which is poured into a moulding hydrophobic container, where the said sol is kept until a moulded volume of gel is formed - gel workpiece. After removal from the mould, the gel workpiece undergoes thermal treatment in several steps, preferably three steps, where in each subsequent step temperature is approximately doubled, and the obtained polycrystalline mechanical strong material undergoes sintering at 1200-1750°C at pressure of 30-300 MPa for 20-30 minutes, after which temperature of furnace is brought down to ambient temperature under inert conditions. |
Device for fixture of core-substrate in reactor for poly-crystal silicon growth / 2398055 Invention refers to production of semi-conducting materials, particularly to production of poly-crystal silicon by means of sedimentation on heated cores-substrates during hydrogen reduction of silicon from chlorine-silane. The device for fixture of cores-substrates 7 in the reactor is equipped with cooled metal current inputs 1 threaded on ends Metal adaptors 2 with axial conic opening 3 narrowing to a lower part are screwed on the current inputs Two graphite conic wedges 4 of taper on external diametre equal to taper of a conic opening of adaptor 2 are installed into axial conic opening 3 Lengthwise slots 5 corresponding to cross section of the core-substrate are made on internal flat surface of graphite conic wedges 4 along the central axis L-shaped metal plates 8 are positioned on opposite facets of slots Height of graphite conic wedges 4 exceeds height of conic opening 3 in adaptor 2. |
Method of producing granular polycrystalline silicon in fluidised bed reactor / 2397953 Invention can be used in making semiconductor devices and solar cells. A reaction pipe lies inside the reactor housing such that the inside of the reactor housing is divided into an inner zone formed inside the reaction pipe and an outer zone formed between the reactor housing and the reaction pipe. A layer of silicon particles forms in the inner zone. A fluidised bed is formed in the reactor by feeding fluidising gas into the layer of silicon particles. The layer of silicon particles is heated and a reaction gas containing silicon atoms is fed the fluidised layer of silicon particles such that silicon is deposited in the inner zone. The reaction gas which contains silicon atoms is selected from a group consisting of monosilane, dichlorosilane, trichlorosilane, silicon tetrachloride or their mixture. Particles of polycrystalline silicon and waste gas are removed from the reactor and pressure difference of about 1 bar is maintained between the inner and outer zones. |
High-pressure reactor with fluidised layer to produce granulated polycrystalline silicon / 2397952 Invention relates to high-pressure reactor with fluidised layer designed to produce granulated polycrystalline silicon. Said rector comprises tube, shell embracing said tube, tune inner zone and outer zone formed between reactor shell and tube. Note that fluidised layer of silicon particles is formed in aforesaid inner zone and silicon is settled, while no such layer is formed in outer zone neither silicon is settled therein. Besides high-pressure reactor incorporates pressure difference control element to maintain difference between pressures in aforesaid inner and outer zones equal to 0-1 bar. |
Procedure and facility for growing silicon crystal on base / 2390589 Invention refers to growing poly-crystal layers of silicon out of melt, particularly to procedures of application of thin films of silicon in base for fabricating solar cells. The facility for growing poly-crystal layers 5 of silicon consists of crucible 1 for melt 2 of silicon, of base 4 out of graphite foil corresponding to an electrode of a solar photo-cell, and of a capillary feeder equipped with at least one rotating roller 3 contacting melt 2 of silicon in crucible 1. The roller can be made with textured surface. During crystal growing the roller is transferred relative to the base or the base is transferred relative to the roller. The roller is arranged either above or under the base. Several alloying substances are simultaneously applied on the base with the roller. The roller and the base are arranged relative to each another in such a way as to ensure application of silicon in vertical or horizontal plane. |
Detachable rector for receiving of rods of multicrystalline silicon / 2382836 Invention relates to manufacturing of semiconducting material, particularly to receiving of initial multicrystalline silicon y sedimentation on heated rods (basis) during the process of hydrogen recovery of chlorine silanes. Detachable reactor of installation for receiving of rods for multicrystalline silicon contains top stationary part with located on its top wall with located on its top wall with attachment fittings of basis, installed on vertical stand with formation under rector of loading-unloading area and separated from bottom mobile section by horizontal plug, bottom mobile part of reactor, separated by additional horizontal plug on shell and bottom part, system of power supply and feeding of components. In bottom part under central axis of each U-shaped silicon basis there are located supports, including contained in to sleeves 18 rods 20, installed on springs 19, in top part on rods 20 there are installed through electrical insulating inserts 21 inserts 22 with two platforms 23, located co-axial with axis of rods of U-shaped silicon basis with regulated clearance between its bottom part and platforms, and springs 19 are installed into sleeves 18 in precompressed condition with effort, equal or exceeding weight of grown rods at achievement by them of platforms. Furthermore, on sleeve 18 by thread it is installed female-swivel nut 24, bearing by its bottom into top butt of rod 20, and sleeves 18 are installed in threaded bushes 17, fixed on detachable frame, implemented from connected by ribs two concentric rings, co-axial to located in top stationary part of reactor by current feedthroughs with attachment fittings of basis. Considering special conditions of operation, electrical insulating insertions are implemented from quartz glass, productivity improvement of detachable reactor. |
Detachable reactor for receiving of rods of multicrystalline silicon / 2382835 Invention relates to manufacturing of semiconducting materials, particularly to receiving of initial multicrystalline silicon by sedimentation on heated rods (basis) in process of hydrogen recovery of chlorine silanes. Detachable reactor 1 of installation for receiving of rods for multicrystalline silicon contains top stationary part 2 with located on its top wall by inner and external rows by current feedthrough 6, 9, 13 with attachment fittings 7, 10, 14 U-shaped basis 8, 11, 15, separated from bottom mobile part by horizontal plug, bottom mobile part of reactor, separated by additional horizontal plug on shell 4 and bottom part 5, outfitted by input nipple of gas-vapor mixture of chlorine silanes and hydrogen. Top stationary part 2 of reactor 1 is outfitted by thirty current feedthroughs with attachment fittings of fifteen U-shaped basis, herewith two central current feedthroughs 6 are located on horizontal axis of reactor symmetrically relative to its center, ten current feedthroughs 9 are located by circle of inner row and eighteen current feedthroughs 13 are located by two circles of different diametres in external row, herewith one of the current feedthrough of each U-shaped basis of external row is located by circle of less diametre, shifted to central area of reactor, herewith in bottom part of reactor there are installed seven inlet nipple of gas-vapor mixture of chlorine silanes and hydrogen, two of which are located on its vertical axis, each at a distance from center, equal to half of radius of circle of internal row, and five nipples are located in cross points of rediuses, passing symmetrically between projections on bottom part of adjacent couples of current feedthroughs of inner row, with circle, located between projections on bottom part of circles of internal and external rows, shifted to central area of reactor. |
Ceramic laser microstructured material with twinned nanostructure and method of making it / 2358045 Proposed laser material is a ceramic polycrystalline microstructure substance with particle size of 3-100 mcm, containing a twinned nanostructure inside the particles with size of 50-300 nm, made from halides of alkali, alkali-earth and rare-earth metals or their solid solutions, with vacancy or impurity laser-active centres with concentration of 1015-1021 cm-3. The method involves thermomechanical processing a monocrystal, made from halides of metals, and cooling. Thermomechanical processing is done until attaining 55-90% degree of deformation of the monocrystal at flow temperature of the chosen monocrystal, obtaining a ceramic polycrystalline microstructure substance, characterised by particle size of 3-100 mcm and containing a twinned nanostructure inside the particles with size of 50-300 nm. |
Facility for receiving of polycrystal rods / 2357024 Invention relates to manufacturing of semiconductive materials, particularly to receiving of initial polycrystalline silicon by means of sedimentation on heated basis during the process of hydrogenous renewal of chlorine orsylan. Facility contains sectional reactor 1, top resting part 2 of which with located on its top wall current lead 6 with attachment fitting 7 of basis 8, 9 is installed on vertical strut 3 with formation under the reactor of materials handling zone and separated from top moving part by horizontal-split, bottom moving part of reactor, separated by additional horizontal slot on bottom-most portion 5 and shell 4, container with sockets, implemented according to location of current lead, and its orientation facility in materials handling area, elevator with facilities for cohesion with bottom part of reactor and with container, power-supply and components feeding system. Into bottom part 5 and shell 4 of reactor split frame 1 there are installed cylindrical frames 10, 11 with demountable reflecting baffles, located coaxial with peripheral basis along the full length, and demountable reflecting baffles are implemented with concavity, directed to peripheral basis. |
Method of obtaining composite material based on diamond and/or cubic boron nitride powder / 2393135 Invention relates to mechanical engineering and particularly to obtaining composite materials based on diamond and/or cubic boron nitride powder, which can be used, for instance as cutting elements in different instruments: drilling, driving instruments, in stone working instruments and instruments used in building industry etc. The method of obtaining composite material involves putting diamond and/or cubic nitride powder into a mould, packing and saturation with metals and/or alloys. The diamond and/or cubic nitride powder with different strength is used and packing is carried out at pressure whose value is selected from the condition Σst.>P>Σl st., where P is value of pressure during packing, Σst. is strength of powder with greater strength, Σl st. is strength of powder with less strength. |
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