Memory element on silicon on glass thin film structure
SUBSTANCE: in a memory element which comprises a substrate with deposited thin layers of ceric and silicon oxide and metal electrodes for recording and deleting information is made from glass which is pre-cleaned with acetone and isopropyl alcohol, on which a ceric oxide layer is deposited at temperature higher than 600°C and thickness of more than 3 nm and a silicon film with thickness of 50-100 nm.
EFFECT: invention prolongs information storage period, simplifies the manufacturing technology and reduces production expenses.
4 cl, 4 dwg
Description of the invention:
The invention relates to semiconductor optoelectronics devices and memory devices.
You know the memory device , containing nanostructure channel source-drain with silicon-on-insulator, in which the electron lithography is formed a quantum dot made of polycrystalline silicon with dimensions of 40 nm and 240 nm. The recording is done by storing one-electron charge on the capacitance of the quantum dot under the influence of the gate voltage. When this capacity is determined by the thickness of the oxide layer and the geometry of the quantum dot. The disadvantages of this device are the complexity of the technological operations of the deposition of layers and etching, large enough memory cell, resulting in a low degree of integration. Also a disadvantage is the fragility of the device, due to the degradation of the oxide layer. Also known device  memory made in the form of a field-effect transistor according to the scheme of arrangement silicon-on-insulator with a channel width of 30 nm and a length of 1 μm. The silicon nanocrystals with an average size of about 8 nm and a surface density of 2-4×10 cm-2was nubilalis on silicon by vacuum-plasma deposition. The gate dielectric SiO2with a thickness of 30 nm was Nepalese vacuum-plasma deposition at low pressure. The disadvantages of this is th devices are complex and expensive technology of manufacturing the memory device, consisting in the deposition of various layers and a high level of noise fluctuations at small sizes the width of the channel, due to the random distribution on the surface of the deposited silicon nanocrystals.
The following well-known device is the device  memory at the array of nanocrystals of silicon area up to 100 mm2with the size of one element 90 nm. The density distribution of the nanocrystals on the surface is 1012cm-2. The length of the shutter was set to 120 nm when the thickness of the silicon oxide 5 nm.
The disadvantages of this device are low speed rewriting, due to silicon oxide, and fragility associated with the degradation of the dielectric due to diffusion of impurities and defects.
The following well-known device is the memory device , consisting of electrodes, the drain-source, gate, control the tunneling of electrons, a layer of nanocrystalline silicon embedded in the silicon oxide SiO2and the aluminum oxide layer Al2About3deposited by pyrolysis of molecules of trimethylaluminum on the surface of silicon oxide. This device has a relatively high density of nanocrystals and high degree of integration. Control over the surface density of nanocrystals and surface distribution is achieved through the use of chemical SV is ist the aluminum oxide layer, on which are grown silicon nanocrystals.
The disadvantages of this device are significant switching time caused by layers of dielectric SiO2and Al2About3. Another disadvantage is the effect of the Coulomb blockade in the process of writing in the memory element, as it is produced by tunneling electrons in the nanocrystals. Energy potential characteristics traps electrons vary the electron emission due to the effect of Fowler-Nordheim, which affects the dispersion of the threshold potential.
Closest to the claimed is a device , which includes a layer of 3.5 nm cerium oxide CEO2the silicon layer thickness of 2.5 nm, a thin layer of cerium oxide thickness of 3.5 nm, deposited on a substrate of monocrystalline silicon Si (111), subjected to a preliminary chemical treatment with acetone, isopropyl alcohol and a solution of hydrofluoric acid and covered with a buffer layer of Si with a thickness of 20 nm. The conservation of charge occurs in the thin silicon layer in the tunneling of charges through the barrier created by the dielectric layer of cerium oxide.
The main disadvantage of these devices is the low retention time of the charge due to the collapse of the state through the thin walls of the potential barrier created by cerium oxide. Another drawback is that the devices are technological complexity of manufacturing of the device, expensive manufacturing techniques, a relatively low degree of integration, due to the dimensions of the device.
The technical task of the invention is to increase the retention time information, as well as the degree of integration, reducing the size of the device, reducing technical complexity and cost of production when using technology.
The technical solution of the problem is a memory device that includes electrodes for recording information, a thin-film structure of silicon deposited on a thin layer of dielectric material duchessina cerium thickness from 3 nm to 10 nm, deposited on a substrate of glass. On the reverse side of the substrate directly under the structure of the silicon-ducharse cerium caused complanata spiral aluminum with metal findings used to heat the substrate, and removing the accumulated information. Aluminum spiral is applied by thermal evaporation of aluminum and masking of the substrate and has a thickness of about 1 μm.
Figure 1 shows the Raman spectra of the structure of the silicon oxide cerium deposited on the glass surface after pre-heating to 190°C With subsequent application of an electric field with different values of the strength of the electric field that implements the account information is promotion. Figure 2 presents the diagram of a memory device that includes a glass substrate 1 subjected to a preliminary chemical treatment with acetone, isopropyl alcohol and deionized water and etched in HF acid solution, and thermal heating in vacuum to a temperature exceeding 600°C with an applied consistently thin dielectric layers of cerium oxide 2 is thicker than 3 nm, and the silicon oxide or silicon nitride 3, and the silicon film 4 with a thickness of 50 nm, the metal electrodes are made of metals such as gold, indium, Nickel, cobalt, alloy MoW for recording and erasing information 5 and 6. The record is produced by feeding an electric pulse to the electrode 5. Erasing is applied an electric potential to the electrode 6.
Figure 3 shows a diagram of the memory device with the read information and the Erasure of optical radiation. The device includes a substrate made of glass 1, a thin layer 2, made of deposited material SEO2, a thin layer 3 of dielectric material SiO2or silicon nitride, polycrystalline silicon film 4, the electrode 5 made of a thin-film material is indium-tin-oxide (ITO), transparent to the radiation, and a metal electrode 6. The electric pulse applied to the electrode 6, will make C the written information in the memory device, and erase is performed using radiation penetrating from the side of the glass substrate and the transparent ITO layer. Also reading of information can be implemented using radiation using the reception of the optical signal of the fixed spectral component of Raman scattering, as shown in figure 1.
Figure 4 presents a diagram of a device that includes a substrate 1 made of glass Corning 1737 or Corning 7059, a thin layer 2 of a material of dielectric SEO2the layer of silicon oxide 3, the silicon film 4, the thin-film coil of the heater 5, made of platinum or aluminum, a layer of doped polycrystalline silicon 6, a metal electrode 7. Recording is carried out by feeding an electric pulse to one of the electrodes 7 and erasing information by heating the active layer to 190°C  using the heater 5. Reading of information is performed optically using laser radiation . An example of specific performance may be a device including a heater, which is implemented at the application on the reverse side of the glass substrate a thin aluminum film with a thickness of 1 μm allowing the heated substrate to a temperature of 190°C, connecting with metal findings for the implementation of heat.
Sources of information the purpose
1. The memory device includes a substrate coated with a thin layer of cerium oxide and silicon and the metal electrodes for recording and erasing information, wherein the substrate is made of glass, subjected to pre-treatment with acetone, isopropyl alcohol, which is applied to the layer of cerium oxide at a temperature exceeding 600°C., a thickness of more than 3 nm and a film of silicon of a thickness of 50-100 nm.
2. The device according to claim 1, characterized in that, to increase the degree of integration, a thin film of silicon subjected to etching method beam lithography, and the silicon Islands are separate memory cells, and metal electrodes deposited directly on silicon.
3. The device according to claim 1, characterized in that the glass substrate from the back side of deposited aluminum film with a thickness of 1 μm, allowing the heated substrate to a temperature of 190°C, connecting with metal findings for the implementation of heat.
4. The device according to claim 1, characterized in that the memory device containing structure consisting of thin silicon films deposited on a thin layer of cerium oxide, contains optically transparent film conductive layer of ITO (indium-zinc-oxide), on which a layer of transparent silicon oxide, allowing the wasp is estolate erasing information using light from the radiation source.
SUBSTANCE: amorphous oxide the composition of which changes in direction of the thickness of layer contains the compound the composition of crystal state of which is presented with formula In2-XM3XO3(Zn1-YM2YO)m , where M2 - element of group II with atomic number which is less than that of Zn (for example Mg or Ca), M3 - element of group III with atomic number which is less than that of In (for example B, Al, Ga or Y), x is within the range of 0 to 2, y is within the range of 0 to 1 and m is 0 or natural number which his less than 6, and at that, amorphous oxide has concentration of electron carriers of not less than 1012/cm3 and less than 1018/cm3 and has electron mobility which increases with increase of concentration of electron carriers.
EFFECT: amorphous oxide operates as semi-conductor to be used in active layer of transistor.
7 cl, 10 dwg
SUBSTANCE: in a field-effect transistor which includes an oxide film as a semiconductor layer, the oxide film has a channel part, a source part and a drain part, and concentration of one of hydrogen or deuterium in the source part and in the drain part exceeds that in the channel part.
EFFECT: invention enables to establish connection between the conducting channel of a transistor and each of sources and drain electrodes, thereby reducing change in parameters of the transistor.
9 cl, 13 dwg, 6 ex
SUBSTANCE: amorphous oxide compound having a composition which, when said compound is in crystalline state, has formula In2-xM3xO3(Zn1-YM2YO)m, where M2 is Mg or Ca, M3 is B, Al, Ga or Y, 0 ≤ X ≤ 2, 0 ≤ Y ≤ 1, and m equals 0 or is a positive integer less than 6, or a mixture of such compounds, where the said amorphous oxide compound also contains one type of element or several elements selected from a group consisting of Li, Na, Mn, Ni, Pd, Cu, Cd, C, N, P, Ti, Zr, V, Ru, Ge, Sn and F, and the said amorphous oxide compound has concentration of electronic carriers between 1015/cm3 and 1018/cm3.
EFFECT: amorphous oxide which functions as a semiconductor for use in the active layer of a thin-film transistor.
6 cl, 8 dwg
SUBSTANCE: in field transistor, comprising active layer and gate-insulating film, active layer comprises a layer of oxide, comprising In, Zn and Ga, amorphous area and crystalline area. At the same time crystalline area is separated from the first surface of interface, which is surface of interface between a layer of oxide and gate-insulating film, distance of 1/2 of active layer thickness or less, and it within the limits of 300 nm from surface of interface between active layer and gate-insulating film or is in point condition in contact with this surface of interface.
EFFECT: production of field transistor with high drift mobility.
4 cl, 4 dwg, 2 ex
FIELD: electrical engineering.
SUBSTANCE: proposed invention relates to field transistor with oxide semiconductor material including In and Zn. Atomic composition ratio expressed as In/(In+Zn) makes at least 35 atomic percent and not over 55 atomic percent. With Ga introduced into material, aforesaid atomic composition ratio expressed as Ga/(In+Zn+Ga) makes 30 atomic percents or smaller.
EFFECT: improved S-characteristic and drift mobility.
9 cl, 25 dwg
SUBSTANCE: invention relates to an amorphous oxide, used in the active layer of a field-effect transistor. The amorphous oxide, which contains at least one microcrystal and has concentration of electron carriers from 1012/cm3 to 1018/cm3, contains at least one element, chosen from a group consisting of In, Zn and Sn, and the boundary surface of the grains of the said microcrystal is coated with an amorphous structure.
EFFECT: obtaining an amorphous oxide which functions as a semiconductor for use in the active layer of a thin-film transistor.
6 cl, 8 dwg
FIELD: physics, radio.
SUBSTANCE: invention is to find application in microelectronics. Concept of the invention is as follows: the proposed field transistor is composed of a source electrode, a drain electrode, a gate insulator, a gate electrode and an effective layer; the effective layer contains an amorphous oxide with an electronic media concentration less than 1018/cm3 and the electronic mobility increasing proportional to the electronic media concentration. Of the source, drain and gate electrodes at least one is visual light translucent with the current flowing between the source and the drain electrodes never exceeding 10 mA unless there is a voltage applied to the gate electrode.
EFFECT: development of a transistor enabling improvement of at least one of the following properties: translucency, thin film transistor electrical properties, gate insulation film properties, leakage current prevention and adhesiveness between the effective layer and the substrate.
21 cl, 12 dwg
FIELD: nanoelectronics and microelectronics.
SUBSTANCE: proposed nanotransistor that can be used in microelectronic and microelectromechanical systems as fast-response amplifier for broadband digital mobile communication means and also for building microprocessors, nanoprocessors, and nanocomputers has semiconductor layer incorporating conducting channel, thin insulator layer disposed on semiconductor surface, gate made on thin insulator surface, drain, and source contacts; semiconductor layer is disposed on bottom insulator layer that covers semiconductor substrate functioning as bottom gate; conducting channel is nano-structured in the form of periodic grid of quantum wires; thin insulator layer encloses each quantum wire of conducting channel on three sides; gate is made in the form of nanometric-width metal strip and encloses each quantum wire of conducting channel on three sides; thin insulator has windows holding drain and source metal contacts connected to channel. Silicon can be used as semiconducting material and thermal silicon dioxide, as insulator.
EFFECT: enhanced degree of integration, reduced size, eliminated short-channel effects, enhanced transconductance, radiation resistance, and environmental friendliness of device manufacture.
4 cl, 2 dwg
FIELD: information technology.
SUBSTANCE: flash memory element for electrically programmable read-only memory has a semiconductor substrate on which there is a source and a drain, on which a tunnel layer, a memory layer and a gate are made in series between the source and the drain. The memory layer is made from a dielectric with high concentration of electron and hole traps and permittivity value which is greater than permittivity of silicon nitride. The memory layer may be made from the following material: TiO2, Ta2O5, AlxTayOz, TaOxNy, HfO2, HfSiOxNy, HfOxNy, Er2O3, La2O3, ZrO2, ZrOxNy, ZrSiOx, Gd2O3, Y2O3, Al2O3, AlOxNy. The memory element may have a blocking layer between the memory layer and the gate.
EFFECT: invention reduces voltage (up to 6 V) and cuts on time for recording and deleting information (up to 10 mcs).
6 cl, 1 dwg
SUBSTANCE: neutral light filters are used in optical devices, particularly as attenuators which reduce radiation intensity. The neutral light filter consists of alternating layers of crystalline gallium monoselenide GaSe and gallium nanoparticles. Said light filter has a holder which has a heat carrier channel.
EFFECT: uniform attenuation of light with wavelength of 2,5-15 mcm.
4 dwg, 1 ex
SUBSTANCE: composite material is a mixture of schungite combined with a fluorine-containing oligomer in a polyamide matrix.
EFFECT: disclosed composition simultaneously improves strength, tribotechnical characteristics and hydrophobic properties.
1 cl, 1 ex, 3 tbl
SUBSTANCE: invention relates to coating, specifically to tribotechnical coating compositions. The composition is a mixture of polytetrafluoroethylene nanoparticles combined with a fluorine-containing oligomer in a polyamide matrix.
EFFECT: composition provides simultaneous increase in wear-resistance and reduction of the friction coefficient of the coating during use without an external lubricant.
1 cl, 1 ex, 1 tbl
SUBSTANCE: invention relates to a nanosized catalyst for direct electrooxidation of boron hydrides of alkali metals. The invention describes a nanosized catalyst for direct electrooxidation of boron hydrides of alkali metals in an alkaline medium containing Ni, Ru, F in form of an alloy on a carbon porous support. Atomic ratio of the components of the alloy Ni:Ru:F=(8-12): 1:(1 -5). The alloy is in form of nanoparticles.
EFFECT: readily available and cheap non-platinum electrocatalyst which is increases the competitive edge of boron hydride fuel cells as energy sources for stationary and mobile use is obtained.
5 cl, 1 ex, 5 dwg
SUBSTANCE: medical device for elimination of diastasis and restoration of integrity of injured peripheral nerve consists of tube from compatible with tissues and absorbable in tissues biomaterial, containing substance, which stimulates post-traumatic regeneration of nerve fibres and diastasis elimination. As tube, medical device contains fragment of bird feather calamus. As substance, stimulating post-traumatic regeneration of nerve fibres and diastasis elimination bird feather calamus contains hydroxylapatite or fluorohydroxylapatite. Method of manufacturing medical device for diastasis elimination and for restoration of injured peripheral nerve restoration consists in the following: bird feather with hole diametre which is 1.5-2.0 mm larger than diametre of injured nerve is selected, from bird feather calamus fragment with length from 5 to 15 cm, correspondingly 1-5 cm larger than injured nerve diastasis, is cut out, thickness of wall of feather calamus is reduced to 0.8-1.0 mm. Calamus fragment is kept for 2-3 days in 10 per cent neutral water formalin solution. After that feather calamus fragment is kept for from 3 to 5 days in water solutions of ethyl alcohol of increasing concentration from 70 to 90%. Feather calamus fragment is kept for from 1 to 2 days in 10% water solution of salicylic acid in order to change its hystostructure. Hydroxylapatite or fluorohydroxylapatite are precipitated on internal and external surface of feather calamus fragment, after which feather calamus fragment is sterilised. Method of manufacturing medical device for elimination of diastasis and restoration of injured peripheral nerve integrity in accordance with the second version consists in the following: bird feather with hole diametre which is 1.5-2 mm larger than diametre of injured nerve is selected, from bird feather calamus fragment with length from 5 to 15 cm, correspondingly 1-5 cm larger than injured nerve diastasis, is cut out. Bird feather calamus fragment is mechanically cleaned outside and inside, boiled in water for 3-4 hours, kept for 3-4 days in 10% neutral formalin solution, kept for 5-7 days in 70% water solution of ethyl alcohol. Hydroxylapatite or fluorohydroxylapatite are precipitated on internal and external surface of bird feather calamus fragment, after which bird feather calamus fragment is sterilised.
EFFECT: inventions ensure making medical device for diastasis elimination and restoration of injured peripheral nerve integrity simpler and cheaper and method of such device manufacturing.
9 cl, 1 dwg
SUBSTANCE: semiconductor photoconverter contains base area made of p- or n-type semiconducting material, diode structures with n+-p (p+-n) junctions on working surface and isotype p-p+ (n-n+) junctions on the opposite surface. Junction surfaces are parallel to working surface, p+-n (n+-p) junctions are made as separate segments commuted using contacts to doped layer. Distance between p+-n (n+-p) junctions does not exceed double diffusion length of minority carriers in the base area. At the same time, photoconverter on the working surface in the base area contains isolated areas with additional isotopic p-p+ (n-n+) junctions which are embedded between two adjacent segments with p+-n (n+-p) junctions. Planes of additional isolated isotype junctions are parallel to working surface. Above additional isotype junctions there are contact strips which are isolated from additional isotype junctions by passivating oxide film and connected by isolated from base area contact strip with contact to doped layer of diode structures. Base area segments without contacts contain passivating antireflection film.
EFFECT: invention allows for increase in effectiveness of high radiation flux conversion.
12 cl, 6 dwg
FIELD: power engineering.
SUBSTANCE: proposed sorbent represents the product of interaction between cations taken from transition metals in equivalent amount and ferrocyanide-anions that make precursors of sorbent being produced, in stable carboxyl-containing polymer colloid. Said stable carboxyl-containing polymer colloid represents poly(acrylic acid), its soluble copolymers and poly(acrylic acid) copolymer emulsion with particle size not exceeding 500 nm Sorbent nanoparticles with localised radio nuclides are separated by settling with the help of cation flocculants which allows decreasing the amount of secondary radioactive wastes formed indecontaminaton.
EFFECT: maximum decontamination plus reduced costs and labor input.
10 cl, 6 ex, 5 dwg
FIELD: packaging industry.
SUBSTANCE: container intake valve assembly with body made from synthetic material represents a valve or ball cock. Container has inner vessel with filler neck and pour-our branch pipe for jointing intake valve assembly, outer facing made from metal mesh or sheet steel and pan-like support made from metal or at least partially, electrically conducting synthetic material to accommodate inner vessel. Valve assembly comprises jointing flange made completely or partially from electrically conducting synthetic material and representing threaded flange with valve body screwed therein. Said flange with valve body are welded to inner vessel our-out branch pipe. Intake valve assembly is grounded by means of grounding conductor. Jointing flange is connected with the support or container outer facing by conductor.
EFFECT: safe and reliable transportation of fluid due to ruling out of fluid contact with metal elements, reduced costs of manufacture.
8 cl, 14 dwg
SUBSTANCE: synthesis of perineural layer continuity is followed by the injective introduction of a suspension of silicon nanocrystals in the nerve injury area. The injection point is exposed to the thermal and/or electric fields then. The thermal exposure is enabled by a frosted lamp through a red filter. The electric field is generated by alternating voltage electric stimulation -100 mV to +100 mV of frequency 1 to 40 Hz. The thermal and/or electric length exposure is 5 minutes 3 times a day for 7 days.
EFFECT: invention allows reducing time of recovery of nerve fibre conductivity and ensuring faster injured nerve repair.
4 cl, 3 ex
FIELD: magnetic materials whose axial symmetry is used for imparting magnetic properties to materials.
SUBSTANCE: memory element has nanomagnetic materials whose axial symmetry is chosen to obtain high residual magnetic induction and respective coercive force. This enlarges body of information stored on information media.
EFFECT: enhanced speed of nonvolatile memory integrated circuits for computers of low power requirement.
4 cl, 8 dwg
FIELD: electronic engineering.
SUBSTANCE: proposed substance related to materials acting on electromagnetic fields so as to control and change them and can be used for producing materials with preset optical, electrical, and magnetic characteristics has in its composition active-origin carrier in the form of clusters of atoms, nanoparticles, or microparticles, its insulating function being checked in the course of manufacture; this function is characteristic controlling interaction between substance and electromagnetic field.
EFFECT: improved characteristics of heterogeneous substance.
FIELD: optics; coherent electromagnetic radiation systems.
SUBSTANCE: novelty is that metal, such as silver, nanoparticles whose plasma resonance frequency is close to frequency of transfer of mentioned active particles to inverted population level are additionally placed in prior-art amplifier on quantum (active) points.
EFFECT: enhanced gain for low and high strengths of fields being amplified.
1 cl, 2 dwg, 1 ex