Dual spectrum photodetector (versions)

FIELD: physics, photography.

SUBSTANCE: invention can be used, for instance in wide-field heat direction finding or thermal imaging devices working in two spectrum regions. The dual spectrum photodetector consists of p modules, each having photosensitive elements, two multiple-element photosensitive lines, a multiplexer and a base. The first multiple-element line is sensitive in one spectrum region and lies on the substrate of the first photosensitive element and the second multiple-element line is sensitive in the other spectrum region and lies on the substrate of the second photosensitive element. In one version first photosensitive elements are trapezium shaped, which enables to arrange the modules such that photosensitive structures, each formed by the lines which are sensitive in one spectrum region, have the shape of regular polygons. In the other version second photosensitive elements are rectangular shaped, which enables arrangement of the modules such that photosensitive structures are in form of a line.

EFFECT: design of dual spectrum large-format multiple-module photosensitive structures of different configurations.

8 cl, 6 dwg

 

The proposed device relate to semiconductor devices sensitive to infra-red (IR) radiation, and can be used in opto-electronic equipment for various purposes, particularly for wide-field teploenergetichnih or thermal imaging devices, working in two areas of the spectrum - 2-3 μm and 3-5 μm.

One of directions of development of the optoelectronics is the creation of opto-electronic devices operating in the infrared region of the spectrum with wide fields of view and high spatial resolution.

For the formation of long photosensitive structures used modular design, in which the structure is assembled from modules with the number of photosensitive elements, the limited capabilities of the technology. It is known to be cooled photodetector (FPU) type BD IM (brochure of the firm Sofradir (France), publ. in December of 2000), made in the form of extended photodetector structures for aerospace applications. This device is designed in the form of a line consisting of five modules, coupled with minimal gaps and forming a line of 1500 photosensitive elements. Each module includes a line of photosensitive elements (photodiodes of the MCT, sensitive in the spectral range of 3-5 µm) and reading mult is plexor. The disadvantage of this device is its work in one area of the spectrum.

A significant raising awareness and empowerment the application of opto-electronic devices is achieved by using not one but two spectral ranges. Photodetecting devices that are included in such equipment must be made in the form of long photosensitive structures with a high number of photosensitive elements, several times exceeding the parameters of the standard television signal (or 768 576).

Known dwuhspiralna cooled photodetector (patent US, A, publ. 11.06.1996, containing two multi-element photosensitive line, each line 128 of the photosensitive element on the basis of PbS or PbSe. These line are arranged in parallel on one substrate of the photosensitive element made of quartz glass or similar material. Photosensitive line located on opposite sides of the metal trace and the optical divider. For reading the photoelectric signals from each line through a wired connection, the photodetector includes two multiplexer. The substrate is located on the base, made of heat-conductive synthetic sapphire and installed on a multi-stage thermoelectric cooler. Duhs actually cooled photodetector contains two filters, creating two areas of the spectrum. As photosensitive elements of the two rulers are made of the same material, is provided an optical divider that prevents one spectral region on the photosensitive elements of the two rulers. The specified device as the closest to the proposed invention is adopted for the prototype. The design is known of the photodetector does not allow you to create a large multi-module photosensitive patterns of various configurations.

The first object of the invention is the creation of dvuhsektsionnogo of the photodetector, which is a part of the optical-electronic equipment (EOS), which implemented method of scanning the image using a conical scan of the external oblique mirror, the normal to which is moving in an elliptical cone, and the reflected beam (the optical sighting axis) on the right circular cone.

The technical result is achieved that provides the ability to create dwuhspiralna large multi photosensitive structures of various configurations located, for example, in the form of a polygon.

This is achieved by dwuhspiralna the photodetector consists of n modules where n≥4, and each module contains two photosensitive element, two multielement Otechestvennye line, the multiplexers and the base, the first multi-element line is made sensitive to one spectral region and is located on the substrate of the first photosensitive element having the form of a trapezoid, and the second multi-element line is made sensitive to a different spectral region and is located on the substrate of the second photosensitive element, and the modules are arranged so that the photosensitive patterns, each of which is formed by lines that are sensitive to one spectral region, have the form of regular polygons.

The second objective of the invention is to provide a long photosensitive structures with a high degree of information content.

The technical result is achieved that provides the ability to create dwuhspiralna large multi photosensitive structures, which form lines.

This is achieved by dwuhspiralna the photodetector consists of n modules where n≥4, and each module contains two photosensitive element having the form of rectangles, two multi-element photosensitive rulers, multiplexers and base, with the first multi-element line is made sensitive to one spectral region and is located on the substrate of the first photosensitive element, and the second multi-element linecalifornia sensitive to a different spectral region and is located on the substrate of the second photosensitive element, and the modules are arranged so that the photosensitive patterns, each of which is formed by lines that are sensitive to one spectral region, are in the form of lines.

In the first and second case, the photosensitive elements of the first line can be made of lead selenide, and photosensitive elements of the second line can be made out of lead sulfide, the first and second photosensitive elements can be installed on the switching Board, and multiplexers can be installed on the photosensitive elements by the method of upside-down mounting with group by soldering through the indium columns.

The proposed solutions are explained by the following drawings, where:

figure 1 - module dvuhsektsionnogo of the photodetector. The main view.

Figure 2 - module dvuhsektsionnogo of the photodetector. Side view.

Figure 3 hybridization of the multiplexer with the photosensitive element through the indium columns.

Figure 4 - multi-element photosensitive ruler, made of different materials.

5 is dwuhspiralna sensor in which photosensitive patterns have the form of regular polygon.

6 is dwuhspiralna sensor in which photosensitive patterns have two lines.

Dwuhspiralna the photodetector consists of the n-th number of modules, each of which shall include:

1, the cooled base, for example, of Kovar;

2 - switching the card installed on the base;

3, 4 - two photosensitive elements (PSEs), on the substrate, the first of which made the first multi-element photosensitive line 5 of the selenide of lead, and on the substrate of the second photosensitive element, a second multi-element photosensitive line 6 from lead sulphide;

7, 8 - multi-channel multiplexers installed on a photosensitive elements by the method of the inverted installation with group by soldering through the indium columns 9;

10 - the polyimide microcable.

The substrate of the first and second photosensitive elements are glued to the switching cost, which is the output of the electrical connections of the photosensitive elements on one side, namely on the polyimide microcable 10.

Using chip multiplexers 7 and 8 installed on the photosensitive elements by the method of the inverted mounting and group rations on indium columns 9, pre-grown on the contact pads of the multiplexers and the photosensitive elements are pre-processing and reading out photoelectric signals from each line to one output.

Installation of multiplexer circuits by the method of the inverted mounting PR is a significant reduction of overall dimensions. Group processing bases and substrates PSEs provides the desired plane of the arrangement of PSEs in the focal plane. With the help of special technology precision cutting of PSEs are provided the minimum clearances between lines of PbS and PbSe, and between adjacent photodetector modules forming a continuous multi-module photosensitive structure.

The combination of the described design features and technologies made it possible to create a compact, technologically dwuhspiralna photo module with a high level of photoelectric parameters and an increased number of photosensitive sites (photoresistors), allowing you to dial in the focal plane of the long photosensitive patterns in the form of polygons or lines.

The first and second multi-element line 5 and 6 of one of the modules dvuhsektsionnogo of the photodetector are located close to and almost parallel to each other and form a photosensitive structure of one of the modules of a sensor operating in two areas of the spectrum - 2-3,0 μm and 3.0-5 microns.

In the first invention of one of the photosensitive elements has the form of a trapezoid whose sides are inclined to the bases of the trapezoid angle α, which allows to connect the n modules, contact between the sides of the trapezoid. When connecting n modules fo chuvstvitelnye patterns, working in different areas of the spectrum, have the form of regular polygons. Side of each polygon formed by lines that are sensitive to one spectral region.

In the second invention, the second photosensitive element has a rectangular shape, and the modules are connected to each other side by side, free from the conclusions of the electrical connections. Two photosensitive patterns, each of which is formed with multiple lines that are sensitive to one spectral region, have the form of lines.

The proposed FPU operates as follows.

Before you begin PSEs 3 and 4 are cooled to a predetermined operating temperature. The flow of infrared radiation is supplied to the photoconductive, under which their resistance changes. Corresponding to this change in the signal increment current supplied to the inputs of the multiplexers 7 and 8, where it is amplified, processed for optimum frequency response and switched to a single output.

The signals from all of the modules that are included with FPU, come in opto-electronic equipment for further processing.

Were produced and tested prototypes of the proposed dvuhsektsionnogo of the photodetector. First of PSEs was a 256-element photoresistor-based lead selenide on a substrate of photostable. Second PSEs before Talal a 256-element photoresistor on the basis of lead sulfide on a substrate of quartz glass. The base is made of Kovar.

The main parameter of a sensor - detecting ability of D∗is λm line of PbSe, measured at a wavelength of 4.2 μm D∗λmax=4·1010W-1cm Hz1/2, a D∗is λm line of the PbS measured at a wavelength of 2.7 μm D∗λmax=3·1011W-1cm Hz1/2that corresponds to the world level for receivers in this class.

1. Dwuhspiralna photodetector that contains the module, consisting of a photosensitive element, two multi-element photosensitive lines, multiplexers and substrate, characterized in that it consists of n modules where n≥4, wherein the first multi-element line is made sensitive to one spectral region and is located on the substrate of the first photosensitive element having the form of a trapezoid, and the second multi-element line is made sensitive to a different spectral region and is located on the substrate of the second photosensitive element, and the modules are arranged so that the photosensitive patterns, each of which is formed by lines that are sensitive to one spectral region, have the form correct polygons.

2. Dwuhspiralna the photodetector according to claim 1, characterized in that the photosensitive elements of the first line is made of lead selenide, and photosensitive elements of the second line is made of sulfide light of the CA.

3. Dwuhspiralna the photodetector according to claim 1, characterized in that the first and second photosensitive elements are installed on the switching Board.

4. Dwuhspiralna the photodetector according to claim 1, wherein the multiplexers are installed on the photosensitive elements by the method of upside-down mounting with group by soldering through the indium columns.

5. Dwuhspiralna photodetector that contains the module, consisting of a photosensitive element, two multi-element photosensitive lines, multiplexers and substrate, characterized in that it consists of n modules where n≥4, wherein the first multi-element line is made sensitive to one spectral region and is located on the substrate of the first photosensitive element, and the second multi-element line is made sensitive to a different spectral region and is located on the substrate of the second photosensitive element having the form of a rectangle, and the modules are arranged so that the photosensitive patterns, each of which is formed by lines that are sensitive to one spectral region, have a ruler.

6. Dwuhspiralna the photodetector according to claim 5, characterized in that the photosensitive elements of the first line is made of lead selenide, and photosensitive elements of the second line is made of lead sulphide.

7. Dohse the Central photodetector according to claim 5, characterized in that the first and second photosensitive elements are installed on the switching Board.

8. Dwuhspiralna the photodetector according to claim 5, wherein the multiplexers are installed on the photosensitive elements by the method of upside-down mounting with group by soldering through the indium columns.



 

Same patents:

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