Method of preparing thin-film metal structure of tungsten on silicon
FIELD: physics; conductors.
SUBSTANCE: invention relates to semiconductor micro- and nanoelectronics and can be used in making integrated circuits, in making electrodes in transistors and capacitor plates, in making contacts and conduction regions on a silicon surface, as conducting, thermostable and barrier layers in metallisation systems. The method of making a thin-film metal structure of tungsten on silicon involves making a nanometer sublayer of an adhesion promoter on a silicon substrate and subsequent deposition of a thin film of tungsten through gas-phase chemical deposition through reduction of tungsten hexafluoride with hydrogen at low pressure. The adhesion promoter used is tungsten silicide W5Si3.
EFFECT: invention improves quality of the obtained metal structure of tungsten on silicon with simplification of the process at the same time.
3 cl, 1 dwg, 3 ex
The invention relates to a semiconductor micro - and nanoelectronics and can be used in the manufacture of integrated circuits (ICS): when forming the electrodes in the transistors and plates of a capacitor, the formation of the contacts and conductive areas on the silicon surface as a conductive, thermally stable and barrier layers in metallization systems. Gas-phase chemical deposition (CVD) of tungsten is the main process of multilevel positive opening operation metallization due to good conformity coatings.
A known method of manufacturing a thin film metal structure of tungsten on silicon, including thin film deposition of tungsten on silicon CVD method on reduction reaction of tungsten hexafluoride with hydrogen in the reactor low pressure activation of hydrogen [Malikov IV, ivy SV, Shapoval HE "Vapor deposition of thin films of tungsten with HF activation, high-purity substances, 1991, No. 4, s-182].
However, all the positive properties of tungsten metallization (tungsten is not susceptible to electromigration resistant to thermal stress, high thermal stability, low activity of oxidation, good conductivity and other) films of tungsten have low structural integrity and often peel off due to poor adhesion of tungsten to amnio, which makes their practical use in IC technology.
A known method of manufacturing a thin film metal structure of tungsten on silicon adopted for the prototype [Handbook of semiconductor manufacturing technology/ ed. Y.Nishi, R.Doering, Marcell Dekker Inc., N.Y., USA, 2000, p.342-345]. The method comprises applying a thin film of tungsten by the method of gas-phase chemical deposition by reduction reaction of tungsten hexafluoride with hydrogen in the reactor low pressure activation of hydrogen on a substrate made of silicon covered with nanometer sublayer of the adhesion promoter. As the promoter used a titanium nitride with a thickness of 30-50 nm to improve the adhesion of a film of tungsten to silicon. Applying a film of titanium nitride (TiN) is an independent process, which is included as an additional step in the overall process flow and requires expensive equipment. To obtain TiN films used processes reactive magnetron sputtering or by collimation or ionization of the sputtered particles.
However, the quality of the resulting structures do not always meet the requirements of modern technology. The formation of TiN sublayer associated with the use of additional reagents, which may be undesirable in IC technology, as any reagent potential source of contamination and unpredictable sources of interference. In addition to TiN, stage zarodysheobrazovanie is additionally injected silane (SiH 4), which further complicates the process.
The presented invention solves the problem of improving the quality of the metal structure of tungsten on silicon with simultaneous simplification of the process.
The technical effect is to obtain integral and stable heterostructures due to the formation of nanoscale sub-layer of the silicide of tungsten (W5Si3) high density. In addition, there is a simplification of the process by combining in a single process stages receiving sublayer of the promoter and the tungsten film.
This object is achieved by a method of manufacturing a thin film metal structure of tungsten on silicon, including the creation of nanoscale sub-layer of the adhesion promoter, followed by the application of a thin film of tungsten by the method of gas-phase chemical deposition by reduction reaction of tungsten hexafluoride with hydrogen on a substrate of silicon under reduced pressure. The novelty of the method lies in the fact that, as the adhesion promoter is used, the tungsten silicide W5Si3.
The silicide W5Si3is structured according to both the tungsten and silicon, has a high perfection of the interface film-substrate interface, which makes it a good adhesive about oterom tungsten to silicon. In addition, the dense structure of the silicide W5Si3prevents the formation of other silicides with higher silicon content and lower conductivity.
The sublayer silicide of tungsten W5Si3can be obtained by any means.
The most technologically advanced creation sublayer of tungsten silicide to carry out the processing of the silicon substrate before deposition of a film of tungsten pairs of tungsten hexafluoride in the same reactor at a temperature of 100-200°C for 10-20 minutes. Under these conditions, a thin surface layer of active silicon and a favorable ratio of tungsten to silicon leads to the formation of stable thick silicide film permanent makeup W5Si3that is a diffusion barrier for tungsten hexafluoride and silicon, which leads to the termination of the reaction siliconware. The result is a self-limited layer of silicide W5Si3thickness of ~20 nm with a high conductivity, which ensures good adhesion of the tungsten.
The best option CVD process is the vapor deposition of tungsten by reduction reaction of tungsten hexafluoride with hydrogen using an RF-activated hydrogen at temperatures between 200°C and more.
The use of HF-activated hydrogen in the process gas-phase chemical is Sardinia allows to reduce the process temperature to room. The temperature reduction is an important condition for the formation of contacts to the semiconductor layers, especially at the nanoscale. However, under these conditions, high-quality film can be obtained only at temperatures higher than 200°C.
On the proposed technology obtained thin film of tungsten with a thickness of about 100 nm and a resistivity of 8×10-6Ohm×cm, close to the resistance of the bulk metal.
The drawing shows a General view of the installation for the manufacture of thin film metal structure of tungsten on silicon.
The installation consists of the following main parts: quartz reactor 1, the furnace of resistance 2 with controlled heating and precise temperature maintenance with the help of art, a silicon wafer 3, the vacuum system 4, including nitrogen pump, booster pump and pump type "Ruts" with control devices vacuum "W-2" and "EDC-1", the source of tungsten hexafluoride with 5 valve fine adjustment and a pressure sensor, supply system and hydrogen purification 6 "Palladium of 0.5 for hydrogen purification by filtration through palladium filters, inductor RF generator 7 with a frequency of 13.56 MHz and a power of 500 watts to excite the plasma, the pressure sensor 8 for controlling the pressure of the gas mixture in the reactor, the system load 9.
As a source of tungsten used clean the th tungsten hexafluoride, corresponding to THE 6-02-18-137-87.
As the substrate used in the plate resistance of silicon orientation <100>.
Pre substrate of silicon processed pairs of tungsten hexafluoride within 10-20 minutes at a temperature of 100-200°C.
Deposition of tungsten is carried out under reduced pressure, varying the temperature from 200 to 500°C depending on the type of CVD process. In normal mode CVD process takes place at temperatures above 350°C. To reduce the temperature of the film deposition of the tungsten used the activation of hydrogen, which allows to obtain high-quality films at temperatures higher than 200°C.
The higher the process temperature is undesirable in the technology of forming integrated circuits, because they lead to more poorly controlled sources of structural damage
Measurement of the thickness of the films was carried out on the Talystep profilometer. The resistivity of the films was measured chetyrehsetovom contact method.
The study of the chemical interactions of the surface layers of the silicon substrate with a film of tungsten was performed by the method of thin-film x-ray diffractometry.
The surface condition of the sample was controlled using atomic force microscopy (atomic force microscope AFM R-04).
Besides visually controlled visible defects and violation of the integrity of dormancy is itia.
These examples suggest, but do not limit the invention.
Obtaining thin films of tungsten rebuilding its hexafluoride with hydrogen was carried out in the installation shown in the drawing.
In a quartz reactor (1) was placed pedestal with silicon plates (3) with an area of 1.5×1.5 cm2. The maximum number of simultaneously processed silicon wafer 10 pieces. Using system degassing (4) brought the pressure up to 0.13 PA. Opened the valve on the feeder WF6(5) and created the pressure in the reactor 10 PA. Before performing a CVD process prior to the deposition of tungsten films on silicon substrate was treated with pairs of tungsten hexafluoride supplied from the system (5) for 15 minutes at 200°C, supported by high precision temperature controller (2). This forms the active silicon layer. Which leads to the formation of a silicide of tungsten W5Si3high density (14.523 g/cm3). This silicide is a barrier to further penetration of tungsten hexafluoride, and the reaction siliconware stopped and formed a self-silicide sublayer W5Si3thickness of ~20 nm.
Then spent the vapor deposition of the tungsten film. In the reactor (1) from the system (6) was applied to the hydrogen, which passed clean through palladium Phi is try. The total pressure in the reactor brought up to 53.2 PA. The temperature of the process was 400°C. the duration of the deposition process was determined by the desired thickness adjusting film of tungsten.
The resistivity of the obtained films of tungsten with a thickness of 150 nm was more close to the resistance of the bulk metal and was 8×10-6Ohm·see
Visual inspection with a microscope showed no violations of the integrity of the coating and visible defects.
Nuclear microscopy measurements showed a uniform coating over the whole surface of the substrate. The film is solid, and the average roughness with film thickness of 100 nm was at the level of 8-12 nm.
Example 2. Same as in example 1, except that the vapor deposition of tungsten by reduction reaction of tungsten hexafluoride with hydrogen was performed using an RF-activated hydrogen. The temperature vapour deposition of tungsten was 100°C.
The obtained film of tungsten at the same coating thickness (150 nm)had a higher specific resistance 62×10-6Ohm·cm, which makes them unsuitable for the task.
Example 3. Same as in example 2, only the vapor deposition of tungsten by reduction reaction of tungsten hexafluoride with hydrogen using an RF-activated hydrogen was carried out at pace is the atur 200°C.
The resistivity of the obtained films of tungsten with a thickness of 150 nm was close to the resistance of the bulk metal and declined to a value of 11×10-6Ohm·see
Visual inspection with a microscope showed no violations of the integrity of the coating and visible defects.
Nuclear microscopy measurements showed a uniform coating over the whole surface of the substrate, the average roughness with film thickness of 150 nm was at the level of 8-12 nm.
Thus, the use of RF-activated hydrogen is possible to reduce the temperature of the CVD process at 200°C.
As follows from the above, the present invention allows to create nanometer sublayer of the adhesion promoter of the tungsten silicide composition W5Si3high density 14.523 g/cm3, while the density of the adhesion promoter in the prototype TiN 5.44 g/cm3. That, in turn, allows to obtain a stable thin-film metal structure of tungsten on silicon with a high conductivity, good adhesion and structural integrity, good reflectivity and thermal stability. The resistivity of the obtained thin films of tungsten approached the resistance of the bulk metal (5,5×10-6Ohm·cm) and was 8×10-6Ohm·see
1. A method of manufacturing a thin-film metal is tructure tungsten on silicon, including the creation of nanoscale sub-layer of the adhesion promoter, followed by the application of a thin film of tungsten by the method of gas-phase chemical deposition by reduction reaction of tungsten hexafluoride with hydrogen on a substrate of silicon under reduced pressure, characterized in that the adhesion promoter is used, the tungsten silicide W5Si3.
2. The method according to claim 1, characterized in that to create a sub-layer of tungsten silicide before applying the film of tungsten silicon wafer treated with pairs of tungsten hexafluoride in the same reactor at a temperature of 100-200°C for 10-20 minutes
3. The method according to claim 1, characterized in that the gas-phase chemical deposition is carried out with the activation of hydrogen at a temperature more than 200°C.
FIELD: light devices production.
SUBSTANCE: method of quantum wells mixing within semiconductor device implies: a) formation of layer structure with quantum wells including doped upper layer; b) formation of etch preventing layer over mentioned upper layer; c) formation of temporary layer over mentioned etch preventing layer, and mentioned etch preventing layer has significantly lower etch rate than mentioned temporary layer on condition that etching requirements are preliminary specified; d) process of quantum wells mixing upon device structure making significant violation of at least a part of consumed layer; e) removal of temporary layer from at least device contact area by etching selective relative to etch preventing layer to uncover mentioned etch preventing layer within contact area; and f) formation of contact over layer structure with quantum wells directly on the surfaced uncovered after execution of stage e) at least within mentioned contact area.
EFFECT: improvement of device contact resistance.
15 cl, 10 dwg
SUBSTANCE: clays are suggested, which contain charge-compensating organic ions, in which at least part of organic ions represents ions on the basis of colophony. Hybrid composite material is suggested, which includes polymer matrix and clay, which contains charge-compensating organic ions, in which at least part of organic ions represents ions on the basis of colophony.
EFFECT: invention makes it possible to expand assortment of organic clays and composite materials on their basis.
16 cl, 5 ex, 4 dwg
SUBSTANCE: invention relates to production of nanoparticles of metals, metal alloys, metal oxides and oxides of some metals. A water soluble metal salt is reacted with an alkali metal salt of carboxylic acid C4-25 dissolved in a first solvent, which is selected from a group which consists of aliphatic hydrocarbon C5-10 and aromatic hydrocarbon C6-10, obtaining a carboxylate complex of a metal. The obtained complex is dissolved in a second solvent, which is selected from a group consisting of aromatic compound C6-25, ether C6-25, aliphatic hydrocarbon C6-25 and amine C6-25, and then heated, obtaining a suspension of nanoparticles which is separated.
EFFECT: simple, cheap, non-toxic, environmentally friendly method of mass production of nanoparticles.
13 cl, 20 dwg, 14 ex
SUBSTANCE: invention relates to field of ophthalmosurgery. Cornea is influenced by layer-by-layer ablation with pulse irradiation of non-scanning excimer laser with Gauss radial distribution of energy density in transversal section of ray. Exposure is carried out by successive reduction of parametre of mean-square deviation of energy density distribution in each of following pulse series within the interval from 2.3 mm to 1.8 mm. Value of energy density amplitude in centre of pulse symmetry, which is within the interval from 175 mJ/sq.cm to 100 mJ/sq.cm is also successively reduced with each following pulse series. Within each pulse series values of parametres of mean-square deviation of energy density distribution and energy density amplitude are constant. Each pulse series forms concave relative to initial cornea surface spherical surfaces, located on one axis, and zone of exposure is symmetrical relative to optic centre of cornea symmetry. Ratio of diametre of first concave spherical surface to diametre of cornea is within the interval from 0.6 to 0.8. Ratio of diametre of second spherical surface to diametre of first spherical surface is within the interval from 0.8 to 0.95. Ratio of diametre of third spherical surface to diametre of second spherical surface is within the interval from 0.8 to 0.95. Cornea surface is exposed to irradiation of excimer laser with wave length 193-250 nm, with diametre of laser impact zone from 5 to 9 mm, pulse duration 15-30 ns, pulse recurrence rate from 5 to 15 Hz.
EFFECT: method ensures reduction of eye tissue traumas with simultaneous reduction of post-operative complications and volume of removed eye tissues.
2 tbl, 3 dwg, 2 ex
SUBSTANCE: invention relates to field of medicine, namely to ophthalmosurgery. Cornea is influenced by layer-by-layer ablation with pulse irradiation of non-scanning excimer laser with Gauss radial distribution of energy density in transversal section of ray and formation of concave relative to anterior cornea surface surfaces. Exposure is carried out by successive reduction of parametre of mean-square deviation of energy density distribution in each of following pulse series within the interval from 2.7 mm to 1.6 mm. Value of energy density amplitude in centre of pulse symmetry, which is within the interval from 175 mJ/sq.cm to 100 mJ/sq.cm is also successively reduced with each following pulse series. Within each pulse series values of parametres of mean-square deviation of energy density distribution and energy density amplitude are constant. Each pulse series forms concave relative to initial cornea surface ellipsoidal surfaces, located on one axis, and zone of exposure is symmetrical relative to optic centre of cornea symmetry. Primarily location of wealk astigmatism axis is determined, and larger axis of formed ellipsoidal surfaces is superposed with it; then first concave ellipsoidal surface is formed, ratio of length of large axis of first concave ellipsoidal surface to cornea diametre being within the interval from 0.6 to 0.8. Further second concave ellipsoidal surface is formed, ratio of large axis of second ellipsoidal surface to diametre of optic zone being in interval from 1.0 to 1.1. Then third concave ellipsoidal surface is formed, ratio of large axis of third ellipsoidal surface to diametre of optic zone being in interval from 0.28 to 0.55. Wavelength of laser irradiation is 193-250 nm, diametre of laser impact zone is from 5 to 9 mm, pulse duration 15-30 ns, pulse recurrence rate from 5 to 15 Hz.
EFFECT: method ensures reduction of operation traumaticity due to reduction of volume of removed eye tissues, increase of optic surfaces number with simultaneous simplification of technical method realisation.
2 tbl, 3 dwg, 2 ex
SUBSTANCE: electrostatic micro-, nanomotor is intended for constructing movement and transportation systems, in micro- and nano-dimensional scale, for example in robotic technology, and namely, in nano- and micro-robotic systems for medical purpose. Motor consists of power supply, at least two plates located relative to each other with a gap and with the possibility of changing owing to electrostatic impact of their spatial orientation relative to each other. In micro-, nanogap between the plates there located with the possibility of being fixed is corrugated self-forming elastic nanocover - spring made of mechanically stressed film. Nanocover - spring changes its shape and elastic coefficient at changing mutual position of plates, when supplying voltage to plates or also to nanocover - spring from power supply and their development of electrostatic impact.
EFFECT: enlarging functional capabilities and application fields of motor, increasing the range and improving accuracy of movements, increasing motor power.
17 cl, 17 dwg
SUBSTANCE: semiconductor photoconverter has on the working surface an antireflection coating, diode structure with a n+-p (p+-n) junction, isotype p-p+ (n-n+) junction in the base region on the back surface, metal contacts to both regions of the diode structure. Thickness of the base region is comparable to the diffusion distance of minority carriers in the base region. The diode structure is made in separate sections, connected by metal contacts. Distance between separate neighbouring diode structures is not greater than twice the diffusion distance of minority carriers in the base region. Width of the diode structures is 10 to 30 times less than the distance between neighbouring diode structures. On sections of the working surface under the antireflecting coating which are free from the diode structures, there is a 10 to 30 nm passivating, dielectric film on which nanoclusters are deposited. Also proposed is one more version of making a semiconductor photoconverter and a method of making the said semiconductor photoconverter.
EFFECT: increased efficiency and reduced cost of making the photoconverter.
5 cl, 3 ex, 3 dwg
SUBSTANCE: method of determining diametre of nanotubes (NT) involves measurement of ion current. The analysed sample is deposited on a gauze electrode, placed between the anode and an ion detector. Saw-tooth voltage is applied across the anode. Negative dc voltage is applied across the ion detector and the current-voltage characteristic of the ion current, on which a series of peaks is observed, is measured. Voltage values which correspond to the said peaks are found on the current-voltage characteristic, and are then compared with corresponding voltages in the current-voltage characteristic of a calibration sample, from which diametres of nanotubes in the entire sample are determined.
EFFECT: shorter time for measuring diametre of carbon nanotubes in a distance range from nanometres to tens of nanometres and simplification of measuring process, enabling simultaneous determination of diametre of nanotubes in a wide range and distribution of diametres of carbon nanotubes in the sample.
SUBSTANCE: invention relates to a composition of raw mixture for making heat-resistant concrete. The raw mixture for making heat-resistant concrete contains, wt %: aluminium-chromium phosphate binder 15 to 18, electromelted corundum 18 to 26, technical alumina 37 to 41, blast-furnace slag 9 to 15.5, wastes from limestone sawing 4 to 10, mixture of silicon and sodium nanoparticles SiO2 and Na2O 1.5 to 2.5.
EFFECT: increased concrete strength.
SUBSTANCE: invention relates to the industry of construction materials and can be used in making objects from quartzite heat-resistant concrete, obtained without precalcination 1. The composition for making unfired quartzite heat-resistant concrete contains, wt %: quartzite filler 70 to 91, fine quartzite 6 to 20, sodium silicate lumps in form of nanoparticles 1 to 4, fine dolomite 2 to 6, water in terms of B/T 0.12 to 0.14. The method of making unfired quartzite heat-resistant concrete from the said composition involves converting sodium silicate lumps into nanoparticles through dehydration dispersion of hydrated sodium silicate lumps finely ground to specific surface area of 2500 to 3000 cm2/g at temperature ranging from 200 to 600°C, mixing quartzite filler, fine quartzite and dolomite with addition of an aqueous mixture of sodium silicate lumps in form of nanoparticles at temperature ranging from 80 to 90°C while stirring, and then water at temperature ranging from 80 to 90°C, stirring the obtained mixture, moulding objects from the mixture and treatment of the object with thermal shock at temperature ranging from 250 to 300°C for 1 to 2 hours.
EFFECT: increased strength and heat resistance of concrete.
2 cl, 1 ex, 1 tbl
SUBSTANCE: invention relates to construction materials, specifically to production of silicate-sodium composite binders for making heat-resistant non-cement unfired concrete. In the method of producing silicate-sodium composite binder for heat-resistant non-cement concrete, involving mixing fine-grained refractory filler and sodium silicate, hydrated fine-grained sodium silicate with specific surface area of 2500 to 300 cm2/g is converted to nanoparticles through dehydration dispersion steaming at temperature ranging from 200 to 600°C with outlet into a bubbler with silicon resin until saturation of the resin with nanoparticles to 20% of the mass of resin.
EFFECT: increased compression strength and operating temperature of objects.
FIELD: carbon materials.
SUBSTANCE: weighed quantity of diamonds with average particle size 4 nm are placed into press mold and compacted into tablet. Tablet is then placed into vacuum chamber as target. The latter is evacuated and after introduction of cushion gas, target is cooled to -100оС and kept until its mass increases by a factor of 2-4. Direct voltage is then applied to electrodes of vacuum chamber and target is exposed to pulse laser emission with power providing heating of particles not higher than 900оС. Atomized target material form microfibers between electrodes. In order to reduce fragility of microfibers, vapors of nonionic-type polymer, e.g. polyvinyl alcohol, polyvinylbutyral or polyacrylamide, are added into chamber to pressure 10-2 to 10-4 gauge atm immediately after laser irradiation. Resulting microfibers have diamond structure and content of non-diamond phase therein does not exceed 6.22%.
EFFECT: increased proportion of diamond structure in product and increased its storage stability.
FIELD: production of new materials.
SUBSTANCE: proposed nanocomposite can be used as component contributing to charges of consumer properties of materials made on its base. Nanocomposite includes fibrils of filler-chitin individualized to nanosizes with distance between fibrils from 709 to 20-22 nm and water-soluble polymeric matrix in interfibril space. Degree of filling of nanocomposite is 0.05-0.25% mass. Fibrils are arranged in parallel and they have cross size of 4 nm. Method of production of nanocomposite comes to the following: free-radical polymerization in water medium of at least one monomer of row of acrylic acid, salt of acrylic acid, acrylamide is carried out in presence of filler. Initiator is chosen from the row of water-soluble peroxides, hydroperoxides or their salts, potassium persulfate. Individualization to nanosizes of fibrils is done simultaneously with process of polymerization and/or with combination of said process with mechanical disintegrating action by disintegrating or pressing, or pressing with abrasion shift. Nanocomposite is obtained in form of film, being pervaporation membrane.
EFFECT: enlarged range of filling, ease of production.
22 cl, 1 tbl, 9 ex, 2 dwg
FIELD: carbon materials.
SUBSTANCE: powderlike catalyst is continuously fed into tubular reactor and displaced along reactor axis. Following composition of catalyst can be used: 70-90% Ni and 10-30% MgO or 40-60% Co and 40-60% Al2O3, or Mo, Co, and Mg at molar ratio 1:5:94, respectively. Process is carried out continuously at countercurrent catalyst-hydrocarbon contact. In the first zone(s) catalyst is activated by gases leaving hydrocarbon pyrolysis at 450-600°C. Residence time of catalyst ranges from 5 to 180 min. Activated catalyst is passed into pyrolysis zone(s) at 550-1000°C. Into the same zone(s), hydrocarbons, e.g. methane, are countercurrently passed. Residence time of catalyst in pyrolysis zone(s) ranges from 0.5 to 180 min. Invention can be used in sorbent, catalyst, and composite manufacturing processes.
EFFECT: enabled continuous manufacture of layered nanotubes or bent hollows fibers, reduced number of stages and consumption of reagents.
4 cl, 2 dwg, 7 ex
FIELD: production of anti-bacterial and sterilizing substances, conducting adhesives and inks and protective screens of graphical displays.
SUBSTANCE: proposed colloidal solution is prepared through dissolving the metal salt and water-soluble polymer in water and/or nonaqueous solvent. Then, reaction reservoir with solution thus obtained is blown with gaseous nitrogen or argon and is subjected to radioactive radiation, after which solution is additionally diluted and treated with ultrasound. Used as metal salt is silver salt, for example nitrate, perchlorate, sulfate or acetate. Use may be also made of nickel, copper, palladium or platinum salt. Used as polymer is poly vinyl pyrrolidone, copolymer of 1-vinyl pyrrolidone with acryl or vinyl acetic acid, with styrene or vinyl alcohol. Used as nonaqueous solvent is methanol, ethanol, isopropyl alcohol or ethylene glycol. In production of metal-polymer nano-composites, use may be made of polymer stabilizer, for example, polyethylene, polyacrylonitrile, polymethyl methocrylate, polyurethane, polyacrylamide or polyethylene glycol instead of water-soluble polymer. In this case, surfactant may be additionally introduced into reaction reservoir for obtaining the emulsion. Solution remains stable for 10 months at retained shape of particles and minor increase of their size. Freshly prepared colloidal solution contains nano-particles having size not exceeding 8 nm.
EFFECT: smooth distribution of nano-particles of metal in polymer.
24 cl, 13 dwg, 1 tbl, 7 ex
FIELD: nanoelectronics, microelectronics; microelectronic and microelectromechanical systems; manufacture of micro- and nanoprocessors and nanocomputers.
SUBSTANCE: proposed method consists in bringing the electrode to substrate surface, after which electrostatic potential which is negative relative to substrate surface point is fed to electrode; substrate is preliminarily placed in damp atmosphere and water adsorption film is formed on its surface, after which electrode is brought to substrate surface in such way that water adsorption film wets electrode; electrode is brought in contact with substrate surface; simultaneously with feed of electrostatic potential to electrode and electrode is subjected to pressure relative to substrate surface.
EFFECT: increased penetration into substrate volume (from 10 nm to 50 nm) of dielectric sections of oxide films.
17 cl, 3 dwg, 5 ex
FIELD: nano-engineering; manufacture of nano-structures; methods of production of nano-fibers.
SUBSTANCE: proposed method consists in forming multi-layer structure on substrate; multi-layer structure includes at least one sacrificial layer and film structure from agent used for forming the fibers and divided into narrow strips; sacrificial layer is selectively removed and narrow strips are released from substrate, thus forming fibers. Multi-layer structure may include several sacrificial layers and several layers from which fibers will be formed. Film structure is divided into strips after growing or it is initially divided into narrow strips by forming it on special-pattern substrate. Proposed method makes it possible to obtain nano-fibers possessing high strength and resistance to surrounding medium. Process is compatible with standard technologies of manufacture of integrated circuits.
EFFECT: enhanced efficiency.
10 cl, 4 dwg
FIELD: microelectronics, nanoelectronics, and semiconductor engineering; producing quantum device components and quantum-effect structures.
SUBSTANCE: proposed method for producing quantum dots, wires, and components of quantum devices includes growing of stressed film from material whose crystalline lattice constant is higher than that of substrate material. Thickness of stressed film being grown is smaller than critical value and film is growing as pseudomorphous one. Sacrificial layer is grown between stressed film and substrate which is then selectively removed under predetermined region of film thereby uncoupling part of the latter from substrate; this part is bulged or corrugated with the result that film stress varies causing shear of conduction region bottom (top of valence region) and formation of local potential well for carriers. In addition, stressed film may be composed of several layers of different materials; it may also have layer mainly holding charge carriers and layer practically free from charge carriers.
EFFECT: facilitated manufacture of quantum structures, enlarged range of materials used, and improved characteristics of components produced.
4 cl, 7 dwg
FIELD: electronic engineering.
SUBSTANCE: method of formation of nano-sized clusters and of creation of ordered structures of them is based upon introduction of solution, containing material for formation of clusters, into material of substrate and in subsequent influence of laser radiation pulse onto the solution till generation of low-temperature plasma in it. Restoration of material of cluster to pure material takes place as a result of crystallization of the solution onto liquid substrate during process of plasma cooling down. Single-crystal quantum points are formed in channels of nano-sized pores, which points are joined with material of substrate. Not only two-dimensional array of clusters but three-dimensional array of clusters can be produced. There is also capability of creation of joined clusters composed of different materials.
EFFECT: improved efficiency.
11 cl, 8 dwg
SUBSTANCE: proposed method for producing calibrated nano-capillary includes continuous monitoring of capillary diameter against set gage using monatomic gas as so-called minimal-diameter plug and molecular gas, as maximal-diameter plug; passage of mixture of these gases through capillary blank; evaluation of capillary diameter by variation in concentration ratio of atomic and molecular gases at controlled decomposition of gas mixture component within capillary. Device implementing this method has capillary blank and capillary holder incorporating capillary heater. Use is made of atomic- and molecular-gas filled cylinders; gas outlets of these cylinders communicate with gas mixer and gas mixture is passed from mixer outlet to mass-spectrograph though leak and capillary blank being heated.
EFFECT: ability of in-process monitoring of capillary diameter.
2 cl, 1 dwg, 2 tbl