Amorphous oxide and field-effect transistor using said oxide

FIELD: physics.

SUBSTANCE: invention relates to an amorphous oxide, used in the active layer of a field-effect transistor. The amorphous oxide, which contains at least one microcrystal and has concentration of electron carriers from 1012/cm3 to 1018/cm3, contains at least one element, chosen from a group consisting of In, Zn and Sn, and the boundary surface of the grains of the said microcrystal is coated with an amorphous structure.

EFFECT: obtaining an amorphous oxide which functions as a semiconductor for use in the active layer of a thin-film transistor.

6 cl, 8 dwg

 

The text descriptions are given in facsimile form.

1. Amorphous oxide containing at least one microcrystal and having the concentration of electronic carriers in the range from 1012/cm3up to 1018/cm3and mentioned amorphous oxide contains at least one element selected from the group consisting of In, Zn and Sn, and the boundary of the grains mentioned at least one microcrystal covered with an amorphous structure.

2. AMO is PNY oxide according to claim 1, in which an amorphous oxide selected from the group consisting of: oxide containing In, Zn and Sn; an oxide containing In and Zn; an oxide containing In and Sn; and an oxide containing In.

3. The amorphous oxide according to claim 1, containing In, Ga and Zn.

4. The amorphous oxide according to claim 1, in which the electron mobility increases with increasing concentration of electronic carriers.

5. Field-effect transistor containing an active layer of an amorphous oxide containing at least one microcrystal and a gate electrode formed such that it is converted to the active layer through the gate insulator, and mentioned amorphous oxide contains at least one element selected from the group consisting of In, Zn and Sn, and the boundary of the grains mentioned at least one microcrystal covered with an amorphous structure.

6. Field-effect transistor according to claim 5, whereby the transistor is a transistor normally off type.



 

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