Methods for treatment of plate surface prior to application of polyimide

FIELD: physics, semiconductors.

SUBSTANCE: invention is related to technology for manufacture of semiconductor instruments and integrated circuits, in particular, to preparation of silicon plate surfaces prior to application of polyimide. Substance of invention: in method for treatment of plate surface prior to application of polyimide, treatment of silicon plate surface prior to application of polyimide is carried out in etchant that consists of hydrofluoric acid and acetone, at the following ratio of components: HF: CH3COCH3 = 1:100, time of silicon plate surface processing is equal to not more than 30 seconds at room temperature, number of dust specks makes 3 pieces.

EFFECT: provides for complete removal of different admixtures from surface of silicon plates, proper adhesion of polyimide to plate, reduction of temperature and time required for plate processing.

 

The invention relates to the technology of manufacturing semiconductor devices and IP, in particular to the preparation of the surface of a silicon wafer before applying the polyimide.

Known methods of processing silicon wafers, the essence of which consists in the complete removal of various contaminants from the surface of silicon wafers [1, 2].

The disadvantage of this method of processing wafers are incomplete removal of various impurities from the surface of silicon wafers, poor adhesion of the polyimide to the plate and high temperature etching (70-80C).

The aim of the invention is the complete removal of various impurities from the surface of silicon wafers, good adhesion of the polyimide to the plate, reducing the temperature and time of processing plates.

This goal is achieved using the provide the Etchant composed of hydrofluoric acid HF and acetone - CH3WITH CH3in the following proportions:

HF:CH3WITH CH3

1:100

The surface processing of silicon wafers is complete in the case when the solution is rolled from the surface of silicon wafers. This improves the wettability of the surface of silicon wafers to the polyimide.

The essence of the method lies in the fact that when processing the surface of the wafer is complete removal of various contaminants and the Yessei to provide the Etchant, consisting of hydrofluoric acid and acetone, with the surface of a silicon wafer, which is carried out at low temperatures, and at the same time, etching is reduced.

Control of the purity of the surface of the wafer is performed under a focused beam of light on the presence of dust.

Summary of the invention the following examples:

EXAMPLE 1. The process is carried out at the installation of chemical processing in the same tank, followed by washing in deionized water, consisting of hydrofluoric acid and acetone, in the following ratio of components:

HF: CH3WITH CH3

1:80

The temperature of provide the Etchant room. The processing time is 60 seconds.

The number of dust particles is 7 pieces.

EXAMPLE 2. The method is carried out analogously to example 1. The process is carried out at the installation of chemical processing in the same tank, followed by washing in deionized water at a ratio of components:

HF:CH3WITH CH3

1:90

The temperature of provide the Etchant room. The processing time of 50 seconds.

The number of dust particles is 5 pieces.

EXAMPLE 3. The method is carried out analogously to example 1. The process is carried out at the installation of chemical processing in the same tank, followed by washing in deionized water at a ratio of components:

HF:CH3WITH CH3

1:100

The temperature of provide the Etchant room. In EMA processing 30 seconds. The number of dust particles is 3 pieces.

As follows from the results of the experiments, one of the most effective etching agents for surface treatment of the plates is to provide the Etchant composed of hydrofluoric acid and acetone.

Thus, the proposed method is compared with the prototype provides surface preparation of silicon wafers before applying polyimide and improves adhesion, which decreases the amount of dust from 7 to 3 particles.

The method of processing the surface of the wafer before applying the polyimide including the surface treatment of a silicon wafer before applying polyimide to provide the Etchant composed of hydrofluoric acid and acetone, wherein the components provide the Etchant used in the following ratio: HF: CH3PINES3=1:100, time of processing the surface of a silicon wafer is not more than 30 seconds at room temperature, the number of dust particles is 3 pieces.



 

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