Receiver of optical radiation and device on its basis

FIELD: physics.

SUBSTANCE: in receiver of optical radiation comprising at least one heterostructure located on transparent substrate and enclosed between two light-transmitting anode and cathode electrodes and consisting of two layers of organic semi-conducting materials with different width of prohibited zone, layers of heterostructure are made of materials with maximums of absorption spectrums located in area λ≤450 nm and high light transmission in visible area of spectrum, at that light transmission of incident flux of radiation from receiver of optical radiation in visible area of spectrum makes at least 30%.

EFFECT: creation of optical radiation receiver transparent in visible area of spectrum.

3 cl, 5 dwg

 

The detectors of optical radiation are one of classesusa types of optoelectronic devices, which are widely used in various fields of science and technology.

The object of the present invention is the design of the receiver of optical radiation and transparent to visible part of the spectrum.

Known receiver of optical radiation (U.S. patent No. 4559552)containing sequentially formed on a transparent substrate two layers of transparent electrode on the basis of indium oxide - tin layer nemonokhromaticheskogo semiconductor material (SiC) - n-type conductivity layer nemonokhromaticheskogo semiconductor material of n-type (SiC), layer nemonokhromaticheskogo semiconductor material (SiC) of p-type conductivity, a layer of transparent upper electrode on the basis of indium oxide - tin, a reflective electrode layer with a high coefficient of reflection.

The disadvantage of this approach is the opacity of the device design.

There are various types of detectors of optical radiation, having a design that is virtually transparent in the visible region of the spectrum containing a hetero InGaN/GaN grown on the sapphire substrate a particular orientation, and nontransparent contacts to the regions of n - and p-type conductivity (Oniracom. Applied optoelectronics. M: Technosphere, 2004, p is .57). The disadvantages of this approach are the necessity of using expensive sapphire substrates particular orientation of limited size, and also the high cost of the process of forming the layers by the method of epitaxy from ORGANOMETALLIC compounds.

Closest to the present invention is a technical solution is described in U.S. patent No. 5504323. The device has a thin film structure and consists of 3 parts: a transparent layer injection holes (anode) based on indium oxide - tin deposited on a solid transparent substrate, the organic polymer layer and an opaque metal electrode injection of electrons (cathode).

The disadvantage of this approach is opaque receiver design. However, a number of applications, such as spatial-temporal light modulators (Oniracom. Applied optoelectronics M: Technosphere, 2004, p.86), requires the use of transparent design of the device.

This goal is achieved by the design of the receiver of optical radiation containing at least one button on a transparent substrate (L1) heterostructure, which is contained between two light-transmitting electrodes (L2, L5and consisting of two layers (L3, L4organic semiconductor materials with different width is Noah forbidden zone (figure 1). As a material of the transparent substrate can be used in a variety of transparent materials (glass, sapphire, polymers etc)

The transparency of the active area of the device structures is achieved by selecting layers L2and L3forming a heterostructure. Transmission spectra and absorption heterostructures, in which the layers L2and L3used, for example, respectively DABuTAZ 3-(4-biphenyl)-(4-tertbutylphenyl)-5(4-dimethylaminophenyl)-1,2,4 triazole [Eyaculando, Mggopwnu, Schemes and other RF Patent №2131411 from 10.06.99] and MOUTH - politifinally [Oniracom. Applied optoelectronics. M: Technosphere, 2004, p.59], figure 2 illustrates.

Absorption spectra of 1 (curve 1) and 2 (curve 2) organic layers are shifted relative to each other, suggesting that they form a heterostructure, with their absorption maxima are located in the region λ≤450 nm (figure 2). Range of integral transmission patterns in General (curve 3 in figure 2) shows that the structure has a sufficiently high transmittance in the visible region of the spectrum. Selection of layers L2and L3according to the above criteria may be made from a wide range of known organic semiconductors (low molecular weight ORGANOMETALLIC, polymer) [O.N. Ermakov. Applied optoelectronic is. M: Technosphere, 2004, p.59].

The photovoltaic characteristics of the receiver illustrated figure 3, which presents the dependence of the differential resistance of the device in dark conditions (curve 1) and the exposure conditions (curve 2).

Different ways in accordance with the invention are illustrated with examples.

Example 1.

Used the basic design shown in figure 1: glass substrate with a transparent bottom layer of the anode electrode based on the oxide, indium - tin, the active region in the form of, for example, heterostructures based on DABuTAZ MOUTH. The upper cathode electrode is in the form of a conductive composite containing Ag and having a transmittance in the visible region of the spectrum, or on the basis of svetopropusknaya layer of carbon nanotubes.

Example 2.

Used the basic design shown in figure 1.

Glass substrate with a transparent bottom layer of the anode electrode based on the oxide, indium - tin, the active region of the heterostructure, for example, on the basis of DABuTAZ MOUTH. The upper cathode electrode made of an opaque material (Al, Mg or CA) has distributed nature (for example, running in a grid) and occupies a smaller part of the surface area of semiconductor heterostructures.

Example 3.

Use the design shown in figure 4.

p> In the present case, on the upper surface of the transparent substrate is formed by the sequence of layers in accordance with figure 1, while on the lower side of the glass substrate is formed mirror-symmetrical sequence of layers: L5- the bottom layer of the transparent anode electrode oxide indium - tin layers L6and L7on the basis of organic semiconductors forming the heterostructure, and the layer svetopropusknaya cathode electrode L8.

Example 4.

Use the design shown in figure 5.

The receiver contains a transparent substrate with a layer of the lower transparent anode electrode (L1) oxide indium - tin layers L2and L3on the basis of organic semiconductors forming the heterostructure layer svetopropusknaya cathode electrode L4layers L5and L6on the basis of organic semiconductors that form the 2nd heterostructure, as well as the 2nd a translucent anode electrode L7.

Example 5.

Used receiver design in the form of two tiers in accordance with the basic design shown in figure 1.

On the basis of the proposed receiver of optical radiation available devices described in examples 6 and 7.

Example 6.

The device containing the receiver of optical radiation according to claim 1, u is defined over the receiver of optical radiation sequentially to the incident radiation flux sensitivity in the visible and near IR region of the spectrum.

The use of such devices should lead to increased efficiency photorearrangement in SE mode.

Example 7.

The optical device containing the receiver of optical radiation according to claim 1, located near the surface of the electrochromic indicator and forming part of its surface, with the two sections of the device are electrically connected with each other.

In this case, possible automatic adjustment of the selective transmittance electrochromic indicator (Displays. Edited Jankova, M.: Mir, 1982, str).

The usefulness of the proposed approach lies in the wide range of possible applications:

- solar cells, transparent in the visible spectrum, can be used in construction for fabrication of bifunctional window glass.

Structurally, such solar cells and batteries can be made with minimal cost on the basis of the standard of energy-saving glass - To-glass + argon + glass.

Transparent in the visible part of the spectrum of the heterostructure of the organic semiconductor material and a translucent cathode electrode formed on the electrically conductive coating To the glass. K-glass in this design function of the transparent substrate with a transparent anode electrode.

Relatively harmless to the high efficiency (about 3%) of such transparent solar cells is compensated by the large area photodetector surface.

For similar purposes such glass can be used in aerospace and automotive industry.

1. The receiver of optical radiation containing at least one button on a transparent substrate heterostructure, which is contained between two svetopropuskanie anode and cathode electrodes and consisting of two layers of organic semiconductor materials with different bandgap layers and heterostructures made of materials with high absorption spectra located in the region λ≤450 nm and high transmission in the visible part of the spectrum, the transmittance of the incident radiation flux of the optical receiver in the visible part of the spectrum is not less than 30%.

2. The receiver according to claim 1, in which the anode and cathode electrodes are made of materials transparent in the visible part of the spectrum.

3. The receiver according to claim 1, in which the anode electrode is made of a material which is transparent in the visible spectrum, and the cathode electrode are distributed on the surface of the semiconductor layer and occupies a smaller portion of it.

4. The receiver according to claim 1, wherein the heterostructure with electrodes located on both sides of the transparent substrate.

5. The receiver according to claim 1, in which at least two heterostructures have a common cathode electrode and the semiconductor layers are arranged symmetrically relative what about the common electrode.

6. The optical device containing the receiver of optical radiation according to claim 1, located above the receiver of optical radiation with sensitivity in the visible and near IR region of the spectrum.

7. The optical device containing the receiver of optical radiation according to claim 1, located near the surface of the electrochromic indicator and forming part of its surface, with both parts of the device can be electrically connected to each other.



 

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