Method of silicon plate surface processing

FIELD: electrics.

SUBSTANCE: method of silicon plate surface processing involves plate loading into bath filled by isopropyl alcohol and dirt cleaning at 255 Hz ultrasound frequency for 51 minutes. Control is performed under focused light by the number of luminescent points. Number of luminescent points should be below 5.

EFFECT: complete removal of dirt, prevention of silicon plate damage, chipping and fracture.

 

The invention relates to a technology of manufacturing of the power transistor, in particular for surface treatment of silicon wafers from contamination after the operation of grinding, polishing and sandblasting.

Usually dirt from the surface of the semiconductor wafer after grinding, polishing and sandblasting removed using brushes, Batiste napkins.

The main disadvantage of the mechanical method of removing pollution is the destruction of the structure of the silicon substrates, leading to cracks and chips [1].

The technical result of the invention is the complete removal of dirt from the surface without damage to the structure of the silicon substrate.

The technical result is achieved by treating the surface of the substrate in isopropyl alcohol at ultrasound frequency of 255 Hz.

The essence of the method lies in the fact that the plates are loaded into a bath filled with isopropyl alcohol, and at ultrasound frequency of 255 Hz spend removing dirt for 51 minutes. When such processing silicon wafers are not damaged, are not formed chips and cracks.

The control is done under the focused light, the number of luminous points. The number of luminous points does not exceed 5 units.

Summary of the invention the following examples:

P is the IMER 1. The process carried out at the facility chemical processing, when the ultrasound frequency of 20 Hz.

The temperature of the room and the cleaning time is 51 minutes.

Luminous dots on the plate is not more than 5 pieces.

EXAMPLE 2. The method is carried out analogously to example 1. The process is carried out at the ultrasound frequency is 30 Hz. The temperature of the room and the cleaning time of 4 minutes.

Luminous dots on the plate is not more than 5 pieces.

EXAMPLE 3. The method is carried out analogously to example 1.

The process is carried out at the ultrasound frequency, equal to 255 Hz.

The temperature of the room and the cleaning time is 51 minutes.

Luminous dots on the plate is not more than 5 pieces.

Thus, the proposed method removes the dirt from the surface of the substrate when the ultrasound frequency, equal to 255 Hz, and the time is 51 minutes. Luminous dots on the plate provided not more than 5 pieces.

Sources of information

1. Ezzel, Fpprec. Planar silicon technology devices. - M.: Energy. 1974. - S.

The method of surface treatment of silicon wafers, including the removal of dirt from the surface of the wafer in isopropyl alcohol, characterized in that the plate is subjected to cleaning in isopropyl alcohol with an ultrasound frequency of 255 Hz and cleaning time 51 min at room temperature, and the control is performed under focus with the etoy, the number of luminous points on the plate is not more than 5 pieces.



 

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