Method, system, device and head for processing solid state device substrate

FIELD: instrument making.

SUBSTANCE: system for processing solid state devices incorporates head to feed processing fluid onto and withdraw it from the substrate surface, the head approaching the substrate surface to make certain gap there between. The system incorporates the first channel feeding, through the channel, the first fluid medium and the second channel for the second fluid medium, other than the first one, to be fed onto the substrate. The system comprises also the third channel to remove the aforesaid first and second fluids from the substrate surface, the channel being operated at a time with the two channels. The application describes also the method, the device and the head to the effect.

EFFECT: fast and efficient cleaning and drying of solid state substrates along with reducing traces of dirt being formed thereon.

27 cl, 21 dwg

 

The text descriptions are given in facsimile form.

1. The processing system of a substrate for semiconductor devices containing head for feeding and removing processing fluid from the working surface supplied during operation with a small gap to the surface of the substrate, the first channel for supplying the first fluid through the head on the surface of the substrate, the second channel for supplying a second fluid, different from the first fluid through the head on the surface of the substrate and the third channel to remove from the surface of the substrate, the first fluid and the second fluid, the first, second and third channels are made with essentially simultaneous engagement in the process.

2. The system according to claim 1, in which during operation the substrate is moved so that its operativemovement runs next to the head.

3. The system according to claim 1, in which during operation the head is moved and passes near the substrate.

4. The system according to claim 1, in which the head length does not exceed the diameter of the substrate.

5. The system according to claim 1, in which the head length is larger than the diameter of the substrate.

6. The system according to claim 1, which has a second head located opposite to the first head and supplied during operation with a small gap to the surface of the bottom side of the substrate.

7. The system according to claim 1, in which the first fluid is used deionized water (DIVAS) or a cleaning liquid.

8. The system according to claim 1, in which the second fluid medium used pair of isopropyl alcohol, nitrogen, organic compounds, hexanol, ethylglycol or miscible with water connections.

9. The processing method of a substrate for semiconductor devices, namely, that on the surface of the substrate serves first fluid environment, near the spot where on the surface of the substrate serves first fluid environment, serves the second fluid medium from the surface of the substrate to remove the first and second fluids, essentially simultaneously with their filing, the filing and removal of fluid accompanied by formation on the surface of the substrate of the controlled meniscus.

10. The method according to claim 9, in which the first fluid use DIVAS or cleaned the total fluid environment.

11. The method according to claim 9, in which the second fluid using a pair of isopropyl alcohol, nitrogen, organic compounds, hexanol, ethylglycol or miscible with water connections.

12. The method according to claim 9, in which the first and second fluids are removed from the surface of the substrate under the action of the vacuum generated in the immediate vicinity of the substrate surface.

13. The method according to item 12, in which the depth adjustment of the created vacuum at the surface of the substrate to form a stable meniscus.

14. The method according to claim 9, in which when forming the meniscus in the first zone of the substrate surface serves first the fluid, the second zone of the substrate surface serves a second fluid medium, and removing the first and second fluids from the surface of the substrate, essentially surrounding the first zone to the third zone, which is at least partially surrounded by a second area, when the supply and removal of fluid on the surface of the substrate is formed meniscus.

15. The method according to 14, in which the first fluid is used cleansing fluid environment.

16. The method according to 14, in which the second fluid using a pair of isopropyl alcohol, nitrogen, organic compounds, hexanol, ethylglycol or miscible with water connections.

17. The method according to 14, in which the first and second fluids UD is collected from the surface of the substrate under the action of vacuum, which is created in the immediate vicinity of the substrate surface.

18. A device for processing substrates for semiconductor devices containing head for feeding and removing processing fluid, which is made with the possibility of its supply to the surface of the substrate and which has at least one first inlet channel for supplying to the substrate a first fluid medium when the head is in close proximity to the substrate, at least one second inlet channel for supplying to the substrate a second fluid medium when the head is in close proximity to the substrate, and at least one outlet channel for removal under the action created inside the vacuum from the surface of the first substrate and the second fluid when the head is in close proximity to the substrate.

19. The device according to p, in which the first inlet channel is used to feed in the direction of the substrate vapor of isopropyl alcohol.

20. The device according to p, in which the second inlet channel is used to feed in the direction of the substrate with deionized water.

21. The device according to p, in which the cylinder when it is placed in operating position in close proximity to the substrate forming on the substrate the meniscus.

22. The device according to p also containing block for the rise and movement of the head, designed for straight-line movement of the head along the radius of the substrate.

23. The head of the device for processing substrates for semiconductor devices containing at least one first inlet channel for supplying the first fluid to the substrate through the head, at least one second inlet channel for supplying a second fluid, different from the first fluid to the substrate through the head and at least one outlet channel for removing from the surface of the first substrate and the second fluid, at least part of which is located between the at least one first inlet channel and at least one second inlet channel and which is made with the possibility, essentially simultaneous engagement with at least one first inlet channel and at least one second inlet channel, and an acoustic transducer, impinging acoustic energy at a first fluid medium, and at least one second inlet channel surrounding at least the rear edge of the at least one outlet channel.

24. Head on item 23, in which the first fluid is used cleansing chemical composition.

25. Head on item 23, in which the acoustic transducer consists of a body and the location is tion it piezocrystal.

26. Head on A.25, in which the acoustic transducer is connected to the source voltage of the high frequency supplied to the radiating acoustic energy from the crystal.

27. Head on A.25, in which acoustic energy is megasessions and/or ultrasonic waves.

Priority items:

30.09.2002 according to claims 1 to 18;

30.06.2003 on PP-27.



 

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