Device for continuous growth of two-sided silicon layers on carbon foil

FIELD: technological process.

SUBSTANCE: invention pertains to growth of monocrystalline silicon layers from a molten mass, and can be used in making solar cells (photoconverters). The device consists of a crucible for melting, a heater, consisting of two heating sections: a square one, the inside of which is fitted with a crucible, and a rectangular one, put over a substrate, a substrate, linked to its displacement mechanism, capillary feeder, bundles of carbon fibres, wound on the tail of the feeder, and a vibrating feeder for supplying crushed silicon. The substrate used is a carbon foil, covered by pyrographite layers. The capillary feeder has an opening for putting in the substrate, and the rectangular heating section is symmetrical about the substrate and has vertical incisions for letting in the substrate.

EFFECT: increased output of the device due to growth of thin silicon layers at the same time on both surfaces of the substrate, due to reduction of the specific consumption of initial silicon due to that, the substrate does not get soaked in the molten mass.

1 ex, 2 dwg

 

The invention relates to the field of growing from a melt of polycrystalline silicon layers and may find application in the manufacturing of solar cells (solar cells).

A device containing a crucible, a heater, a pull mechanism and a device for maintaining the level of the melt in the crucible at a constant Belouet .Growth of silicon ribbons by the RAD process. J. Crystal Growth, 1987, v.82. No.1/2, p.110). This device is used for the simultaneous cultivation of two layers of polycrystalline silicon on the surfaces of the tapes from the carbon foil, extending in a vertical direction through the gap in the bottom of a graphite crucible. In the future, the graphite layer is burned out at a temperature of 1000°C in an atmosphere of oxygen and each "sandwich" splits into two plates of silicon.

However, the known device has two drawbacks. The first is that the increase in productivity requires increasing the diameter of the graphite crucible and a sharp increase in energy consumption. The second drawback is that you must use to accommodate technological install high-rise buildings. If the total installation height exceeds 8 m, the height of the ceiling of the process building will be at least 12 m, and, consequently, the costs of ventilation and heating will be greater than in the case vitaliani the layers of silicon on a substrate in a horizontal plane.

A device for continuous cultivation of oriented layers of silicon on a carbon cloth (RF patent No. 2264483, published in Bulletin of inventions No. 32, 20.11.2005, including the crucible to melt installed inside the heater, substrate, connected to the mechanism of its movement, and the capillary feeder, as the substrate used carbon mesh fabric, heater, feeder performed on the substrate, for supplying molten silicon from the crucible used the wiring from the carbon filament wound on the shank of the feeder, and to replenish the melt level in the crucible is used, the feeder feeding the crushed silicon. The use of the known device allows continuous cultivation of oriented layers of silicon on a substrate of carbon mesh fabric needed to produce cheap and efficient solar cells (solar cells).

However, the known device has several disadvantages. Using as a substrate a carbon cloth leads to the fact that to obtain silicon layer you want to spend the bulk of the original silicon impregnation of the fabric. While the specific consumption of expensive silicon exceeds 17 g per 1 watt of installed capacity of PV. In addition, the linear speed of growing is limited by time, the mu is necessary for pre-impregnation of the fabric and may not exceed 2-3 cm/min The main disadvantage of the known device is that the silicon layer is grown only on one surface of the substrate.

The above device closest to the technical nature of the claimed device.

The technical result of the present invention is a continuous thin layer of polycrystalline silicon on both surfaces of the substrate from the carbon foil, protected by layers of pyrographite from impregnation with molten silicon. While the specific consumption of the source of silicon is reduced to the level of 3-4 g per 1 watt of installed capacity of PV and process productivity increases more than twice.

To achieve the technical result in the device for continuous cultivation of bilateral layers of silicon on a carbon foil, comprising a crucible for the melt, a heater, comprising two heating sections: square, inside of which is installed the crucible, and rectangular, is placed over the substrate, the substrate is connected with the mechanism of its movement, the capillary feeder, the wiring of the carbon filament wound on the shank of the feeder, and the feeder feeding the crushed silicon to replenish the melt level in the substrate using a carbon foil, covered with layers of pyrographite, capillary feeder is provided with a slit for the input p is Daiki, and rectangular heating section is made symmetric with respect to the substrate and provided with vertical slots for transmission.

The proposed device is illustrated in the drawings figure 1-2. Thermal insulation, fasteners and machine parts are not shown.

Device for the continuous cultivation of bilateral layers of silicon on a carbon foil (figure 1) contains a graphite heater 1, comprising two heating sections: square, inside of which is mounted a graphite crucible 5, and rectangular, placed above the substrate 2, made of carbon foil wound on a bobbin 3, the capillary feeder 4 from dense graphite, is provided with a slit for entry of the substrate 2, the vibratory feeder crushed silicon 6, vibrooccasion roller 7 and the pulling mechanism 8. The shank of the feeder wrapped bundles 9 of the carbon filament for capillary feed of the melt. The rectangular section of the heater 1 is made symmetric with respect to the substrate 2 and is provided with vertical slots for transmission. The crucible 5 is made of high-density graphite. The vibrooccasion 7 is placed above the right end of the feeder and is controlled by a voltage source placed outside the growth chamber. The pulling mechanism 8 is placed outside the growth chamber.

Square the heater section 1 provides heat the crucible, and rectangular - creates the necessary temperature in growing a layer of silicon on the substrate. The last section is placed above the substrate. The cross section of the elements of the heater 1 is chosen in such a way that the heater crucible was always overheated relative to the heater substrate. This provides almost instantaneous melting of the crushed silicon, continuously coming into the crucible 5 from the feeder 6.

The device operates as follows.

Cut-to-length tape width 0.5 m, covered with pyrographite carbon foil 2, is wound on a graphite reel 3, is equipped with a brake for tensioning the substrate is installed inside the growth chamber. In the cavity of a graphite heater 1 is installed graphite crucible 5 on the stand. On the retaining elements associated with insulated from the heater 1 designs, installs capillary feeder 4, the shank of which is wrapped bundles 9 of the carbon filament. On two supports attached to the vibratory feeder 6, loaded with crushed silicon 10. The vibratory feeder 6 connect the vibrooccasion 7. The substrate 2 is output to the exhaust slit growth chamber, which is closed vacuum-tight lid. After pumping chamber includes a heating system and reaches a temperature exceeding the melting point of silicon. Then include vibrar the water 7 and fill the crucible 5 with molten silicon. Then turn off the pump and fill the growth chamber pure argon to atmospheric pressure. Then open the cover of the outlet slit growth chamber, pull the substrate and fill its end between the rollers of the pulling mechanism 8. The flow of argon is conducted at the level not less than 150 l/h After the tension of the substrate 2 set the rotation speed and feed of crushed silicon 10. As of 11 product (substrate with layers of silicon) it mechanically breaks off, after which the process continues until the exhaustion of the supply of silicon vibratory feeder 6 or the substrate on reel 3.

Figure 2 shows the scheme of growing two layers of silicon on a substrate at the same time. The substrate 2 is passed through the slit capillary feeder 4, the heated graphite heater 1. This 2 are formed capillary meniscus: the top 12 and bottom 13. Growing layers of silicon occurs in both upper and lower surfaces of the substrate.

Example.

Spend the cultivation of two layers of silicon on a substrate of carbon foil width 17 cm, length 1000 cm and an average density of 1.5 g/cm3pre-modified layers pyrographite at a temperature of 2150°C for one hour. Pumping chamber to create a vacuum, hold the heating zone to 1450°C. Pull the foil and clamped between the two rollers, the latter is the air traffic management 8. Next, perform the filling of the crucible 5 silicon. Turn off the pump and fill the chamber with argon to atmospheric pressure. The substrate 2 is passed through the slit capillary feeder 4, the heated graphite heater 1.

After visual detection of the two menisci (the upper 12 and lower 13) melt include the drive stretching of the substrate 2, and achieves the positioning of the crystallization front is ahead of each of the menisci. Support the decrease of the melt by vibrapods crushed silicon 10 in the crucible 5. Upon completion of the process substrate removing chamber seal. The result is a tape from the carbon foil, coated with two layers of silicon, and the average thickness of the upper layer is 0.25 mm, and the lower - 0.18 mm, overall length suitable for further application tape - 860 see

Device for the continuous cultivation of bilateral layers of silicon on a carbon foil, characterized in that includes a crucible for the melt, a heater, comprising two heating sections: square, inside of which is installed the crucible, and rectangular, is placed over the substrate, the substrate is connected with the mechanism of its movement, the capillary feeder, the wiring of the carbon filament wound on the shank of the feeder, and the feeder feeding the crushed silicon, while the substrate using carbon fo is IGW, covered with layers of pyrographite, capillary feeder is provided with a slit to enter the substrate, and a rectangular heating section is made symmetric with respect to the substrate and provided with vertical slots for transmission.



 

Same patents:

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EFFECT: the invention ensures growing of polycrystallic layers from a melt of silicon.

1 dwg

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3 dwg

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3 cl, 1 ex, 1 tbl, 3 dwg

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4 ex

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6 cl, 2 ex, 2 dwg

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1 dwg 1 o

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1 dwg

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2 cl, 4 ex, 1 tbl

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1 dwg

FIELD: production of solar batteries, integrated circuits and other semiconducting devices.

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2 cl, 4 ex, 1 tbl

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6 cl, 2 dwg

FIELD: chemical industry; methods of growing of the rectangular monocrystals of sapphire.

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EFFECT: the invention ensures the increased output of the suitable single crystals up to 60 % due to reaching the integrity of the geometrical shape of the crystal with the crystallographic orientation along the axis <1010> or <1120> and acceleration of the growing process.

5 cl, 2 dwg

FIELD: growing germanium monocrystals.

SUBSTANCE: germanium monocrystals are grown from melt on seed crystal with the use of molder filled with melt; molder has holes for removal of excessive melt formed during crystallization. First, crystal is enlarged on rotating seed crystal in radial direction till it gets in contact with molder placed in crucible without melt; then, rotation of crystal is discontinued and crystallization is carried out in axial direction by lowering the temperature till complete hardening of melt; molder is provided with holes in its lower part located at equal distance from one another at radius r satisfying the condition r<K/h, where K= 0.2 cm2; h is height of melt, cm; number of holes, 12-18. Molder may be made in form of round, square or rectangular ferrule. Proposed method makes it possible to obtain germanium crystals of universal shape with no defects in structure, free from mechanical stresses and homogeneous in distribution of admixtures.

EFFECT: increased productivity; reduced technological expenses; increased yield of product.

2 cl, 2 dwg, 2 ex

FIELD: growing monocrystals of refractory oxides from melts by oriented crystallization; production of sapphire monocrystals corresponding to opto-electronics requirements.

SUBSTANCE: proposed device has vacuum chamber with crucible and molding unit, tungsten heater, shields, rod with seed holder which is provided with crystal raising mechanism mounted outside the chamber, melt make-up system made in form of bin with tube and unit for control of heating and rate of raising the crystal. Device is additionally provided with annealing vacuum chamber mounted above chamber with crucible and molding unit coaxially relative to it and system for synchronization of mass of crystal being grown and consumption of make-up material; annealing vacuum chamber is provided with self-contained heater whose height is equal to or exceeds maximum size of length of crystal obtained; diameter of annealing chamber ranges from 0.6 to 0.9 of diameter of lower chamber; mounted in between chambers is partition with holes for rod with seed holder, crystal being grown and make-up; molding unit is made in form of parallelepiped with parallel through vertical slots which is mounted in crucible at clearance and is secured on crucible walls; height of parallelepiped is equal to 20-30% of crucible height; width of slots is 0.2-0.3 mm at distance between them of 0.2-0.5 mm; in horizontal plane ends of slots are blind. Proposed device makes it possible to eliminate voids lesser than 50 mcm in diameter at obtaining the crystals whose transversal size is lesser than 100 mm at crystallographic orientation of <1010> or <1120>. Power requirements are reduced by 4-6 times. Monocrystals grown with the aid of this device have low internal stresses which is important for further mechanical treatment of crystals.

EFFECT: reduced power requirements; low internal stresses of crystals.

7 cl, 2 dwg

FIELD: production of shaped crystals of refractory compounds such as leucosapphire, ruby, aluminum-yttrium garnet and other by growing from melt according to Stepanoff method.

SUBSTANCE: method comprises steps of evacuating melting chamber and warming heat zone; adding to melting chamber at least one inert gas; providing temperature of heat zone till melting temperature of initial raw material in crucible while filing capillary system of shaper with melt; flashing seed crystal and growing it on end of shaper; drawing crystal; tearing off crystal and cooling it. During those steps applying to melting chamber mixture of inert gases containing, mainly argon and at least helium; setting in melting chamber pressure of mixture that is less than atmospheric pressure and after growing crystal up to its complete section melting off grown part of crystal just till seed and again realizing growing procedure. Then crystal is finally grown. After cooling ready crystal the last may subjected to annealing outside melting chamber for two stages, at first in reducing carbon-containing gas medium including inert gases and then in vacuum.

EFFECT: possibility for producing high optical quality crystals with improved uniformity of optical properties, less loss of yield, lowered cost price of produced crystals.

8 cl, 2 tbl

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