Treatment of semiconductor surfaces and mixture used in process

FIELD: chemistry.

SUBSTANCE: invention pertains to compositions used for treating surfaces and the method of treating the surface of a substrate, using such a composition. The essence of the invention is that, the cleaning solution contains water, hydrogen peroxide, an alkaline compound and 2,2-bis-(hydroxyethyl)-(iminotris)-(hydroxymethyl)methane as a chelating additive. The alkaline compound is preferably chosen from a group containing an organic base, ammonia, ammonium hydroxide, tetramethylammonium hydroxide, and most preferably from a group containing ammonia and ammonium hydroxide. Content of the chelating additive is 1000-3000 ppm. The cleaning solutions are used for the process of treating the surface, including cleaning, etching, polishing, and film-formation, for cleaning substrates, made from semiconductor, metal, glass, ceramic, plastic, magnetic material, and superconductors. The method involves treatment of semiconductor substrate(s) using a cleaning solution and drying the given semiconductor substrate(s) after washing in water.

EFFECT: increased stability of the solution at high temperature and increased degree of purification of surfaces.

3 cl, 2 tbl, 15 dwg, 3 ex

 

The area of technical applications

The present invention relates to a composition for surface treatment and method of processing the surface of the substrate using the composition. More preferably the present invention relates to a composition for surface treatment comprising a liquid as a main component, which prevents contamination of the substrate surface metal impurities from the composition for surface treatment and consistently delivers extremely clean surface of the substrate, and also relates to a method for surface treatment of the substrate using the composition.

Prerequisites to the creation of inventions

In addition to miniaturization by a high-speed ultra-high integration of LSI (large-scale integration - integration of a high level) the process of wet cleaning is especially necessary to improve its operation and reduce its cost. There is a significant need for strict pollution control because of trace impurities have a harmful impact on properties and can greatly reduce the effectiveness of the devices. We investigated many new proposals to reduce the cost of the cleaning process, processing time, improve environmental performance, reduce the number of chemicals used and waste processing.

The standard sequence is alnost wet cleaning, which was widely used, based on the RCA cleaning method (RCA Rev.31, str, 1970 [1]). Standard RCA was developed for the removal of dispersed material, as well as organic and metallic impurities from silicon surfaces. Chemicals used in the cleaning sequence, is a combination of two different Chemezov: SC-1 and SC-2 (Standard clean 1 and 2). The first stage of cleaning, SC-1 (also known as AWS), includes ammonium hydroxide, hydrogen peroxide and deionized water (DI water). Particles and the remaining organic matter is removed by oxidative dissolution. In the second stage, the SC-2 (also called theorm)uses a mixture of hydrochloric acid, hydrogen peroxide and deionized water to remove any residual metals from the surface of the semiconductor.

This is theoretically, while during the cleaning processing, there are many disadvantages of each RCA-phase ([Handbook of semiconductor wafer cleaning technology (W.Kern, as amended), p.3-56 (1993) [2]; Mat. Res. Soc. Symp. Proc., Tom 477 (1997) [3]; J. Electrochem. Soc., volume 141 (10), p.139 (1994) [4]). Most cleaning solutions shows good efficiency to only one type of contaminant. So the further the main problem leads (often) to re-contamination on silicon substrates by chemical substances that are listed below. Hiratsuka and others showed pH dependence of deposition met low on silicon substrates. Especially easy to apply Fe, Zn and Al in the form of hydroxides in alkaline solutions (Ultra Clean Technology, vol. 3 (3), str (1993) [5]). The decrease in roughness of silicon surfaces by micromacrame in aqueous peroxide solution shows another problem ([2]; J. Electrochem. Soc. 147 (2), str, 2000 [6]).

To avoid these problems, use different modifications of cleaning, changing reagents to process, temperature, etc. to increase technological service life and efficiency of the bath. For example, Heyns et al. proposed a cleansing process without ammonia or hydrochloric acid (Mater. Res. Soc. Symp. Proc, p.35 (1993) [7]). Different approaches are used for cleaning, based on ozone and/or HF, with/without megacystis for improved cleaning process: European patent number EP 0994505 A2 [8] and 0982765 A2 [9]; Solid State Technology (July), p.109 (1995) [10]; J. Electrochem. Soc. 148 (3), p.118 (2001) [11]; J. Electrochem. Soc. 148 (5), str (2001) [12]; Mat. Res. Soc. Symp. Proc. volume 477, p.35 (1997) [13].

The introduction of complexing or chelating agents could simplify the whole cleansing process. The effectiveness of chelating agents in preventing the deposition of metals on silicon surfaces in the cleaning solutions shown in many patents and literature, for example, European patent number EP 1047121 A1 [14], EP 0496605 B1 [15], EP 0986096 A2 [16], EP 1091395 A1 [17], EP 931038418 [18], EP 652283 A1 [19], U.S. patent # US 5962384 [20], US 5290361 [21], S 5837667 [22], Japanese patent unexamined publication No. 50147284 [23]; J. Electrochem. Soc. 148 (6), str (2001) [24], Solid State Phenomena, volume 76-77, str (2001) [25]; Proc. Electrochem. Soc. 99-36, p.114 (2000) [26], Solid State Phenomena, volume 65-66, p.23 (1999) [27].

The above references disclose the use of many complexing agents such as EDTA, CDTA (connection acetic acid), alkanolamine (e.g., TEA), specific compounds, phosphonic acid or hydroxamic group (e.g., Dequest 2060, cTRAMP, Desferal), hydroxides of alkylamine (for example, TMAN) or phenols (catechol, Tiron).

Laboratory examine/make an attempt to develop the chelating agents capable of komplektovaniiu multicharged metal ions (such as Fe, Ca, Zn, Ni, Al) in the cleaning solutions and acting as a stabilizer for H2O2and/or SC-1. Another significant purpose of chelating agent should be removing metallic impurities from silicon substrates. Most additives are less able to work on complex assignments or do not demonstrate sufficient stability of the complex during the cleansing process. So many complexing reagents not applicable in the industrial cleaning process. For example, EDTA is not significantly active in the SC-1 solution in comparison with the above-mentioned compounds, phosphonic acid, due to its decomposition at elevated temperature processing. AWS races the thieves, the group containing phosphonic acid, show a lower efficiency in removing Al from the silicon surface. Also the constant stability of Al-chelate (EDTA) complex in the SC-1 treatment (pH 9-10) is much lower than this constant other metals. Dequest 2060 and cTRAMP show good complexation, especially for Fe (Zn and Cu), within a 10-minute stages of purification. Saloniemi and others (VTT Electronics) and US patents US 5962384 [28] confirm good results CDTA in the suppression of the H2About2decomposition in dilute workstation solution and reducing the deposition of metals on Si-substrates except aluminium. Also good results using at least two chelating agent to prevent the precipitation of metals on Si-substrates stated Morinaga and others in the U.S. patent US 6228823 B1 [29] and [3].

The purpose of the invention

Therefore, the aim of the present invention is to improve the stability of the above cleaning solution containing aqueous hydrogen peroxide and ammonia (AWS), at normal temperature and especially at elevated temperatures. A further objective of the present invention should provide a cleaning solution that does not contain phosphate compounds.

Another objective of the invention is to provide a modified purification method, which can effectively be used as a separate step of the method of alkaline cleaning for silicon surface is of Hosta.

Description of the invention

The present invention relates to the cleaning solution, which is able to remove and inhibit the contamination of metal impurities on the surface of the semiconductor substrate. The invention relates to the cleaning solution, which shows inhibiting properties against new metal impurities on these surfaces during the clean process.

The experiments developed method and purifying the mixture to prevent deposition of metal impurities on silicon surfaces. In particular, it was found that the addition of chelating agent allows you to receive said cleaning mixture that does not include phosphorus-containing compounds.

The present invention further includes a cleaning solution capable of removing impurity metal from the surfaces of semiconductor substrates.

The third preferred feature of the present invention is a significant improvement of the sustainability of the above cleaning solutions containing aqueous hydrogen peroxide and ammonia (arm).

Selected chelating agents can be added to the cleaning solution directly before use, but the preferred aim of the present invention is a holistic cleaning solution, which is capable of removing impurities of metals, inhibition of adenia new contamination and stabilize the cleaning solution using the optimal conditions of treatment and especially chelating agent.

An additional objective of the present invention is a chelating agent used to capture metal impurities in the cleaning solution in the form of stable aqueous complexes that do not include specific groups containing critical elements, especially phosphorus.

In conclusion, the present invention provides a cleaning solution containing aqueous hydrogen peroxide, stabilized against decomposition. The specified cleaning solution comprises a mixture of ammonia, hydrogen peroxide, deionized water and at least one chelating agent.

In an additional embodiment of the present invention mentioned complexing reagents are used as compounds that prevent the precipitation of metals, and a stabilizing compound. These compounds are 2,2-bis-(hydroxyethyl)-(iminutes)-(hydroxymethyl)methane, [Bis Tris] and nitrilotri-acetic acid [NTA; CAS 139-13-9; Titrplex I]. Each of these compounds may be added to the cleansing compositions alone or in combination with another connection.

Acceptable cleansing composition can contain these complexing reagents in quantities of less than 4000 ppm. Preferably Bis Tris can be added in the range of 1000-3000 ppm and NTA in the range of 100-2000 ppm, most before occhialino Bis Tris add in the range of less than 2000 ppm and NTA in the range of less than 500 ppm. The total mass concentration of these chelating agents should be preferably less than 2000 ppm (0.2 wt.%), but depending on the case it may be necessary to add more or to ensure the cleaning solution during the cleaning process, an additional amount of chelating agent.

In General, the cleaning solutions used at elevated temperatures. Known cleaning solutions are effective at temperatures higher than 60°C. the Mixture of the present invention preferably can be used effectively at temperatures in the range of 20-80°With, especially at normal room temperature. Most preferably they are used at temperatures in the range of 40-50°C. depending on the stage of the method of the mixture according to the invention can be brought into contact with the cleaned surfaces into a time of about several seconds to 60 minutes, preferably from about 15 seconds to 15 minutes, most preferably from about 30 seconds to 6 minutes.

In order to find the optimized composition for new cleaning solutions, conducted a series of experiments was tested cleaned the ability of chelating agents in the SC-1 and SC-2 solutions.

Control decomposition of H2About2- reinforced metal additives, shows the effectiveness of Helati the respective agents in the cleaning solutions. Tests on the stability of the baths were conducted in AWS solutions, intentionally contaminated with various target metals (Fe, Ca, Zn, Al, 5 ppb) with/without the addition of chelating agent (CA) (figure 1).

In further experiments it was verified the effectiveness of chelating agents for inhibiting the deposition of metals on silicon surfaces. The Si substrates were pre-cleaned with SC-1 and immersed in the above contaminated solutions. Pollution of surface metals on silicon substrates was analyzed using X-ray fluorescence spectroscopy total reflection (Total Reflection X-Ray Fluorescence Spectroscopy - TXRF) (table 1).

In addition, the removal efficiency of chelating agent with silicon surfaces in the SC-1 solution was studied using TXRF. The Si substrates were pre-polluted (Fe, Ca, Zn, Al, 1012-1013at/cm2) and then immersed in the SC-1 solution containing a chelating agent (table 2).

The amount of complexing reagent, which must be added as a preventive tool against the metal deposition depends on the type and amount of metal impurities contained in a liquid medium and deposition which prevent. It also depends on the level of purification required for the surface of the substrate. The total amount that must be added to the composition is surface treatment, in General, it is within the maximum range of up to 2 wt.%, but usually up to 0.4 wt.%. If the above amount is too small, the expected preventive effect plating of the present invention is hardly achieved. On the other hand, if the above amount is too large, then no additional effect can be attained and there is a fear that the complexing reagent as preventing the precipitation of the metal tool can be applied to the surface of the substrate, which is undesirable. Using Bis Tris and NTA, the latter case has never met.

Examples of the liquid medium used as the main component for the composition of the surface treatment of the present invention mainly include high-purity water, electrolyzed ion water, an organic solvent or an aqueous solution containing acid, alkali, oxidizing agent, reducing agent, surfactant or the like dissolved substance, or mixture of these solutions. Especially, when an alkaline aqueous solution or a diluted solution of hydrofluoric acid is used for cleaning or etching a semiconductor substrate, the metal impurities in the solution is very easy to apply on the surface of the substrate, and therefore, in such cases predpochtitelney these solutions, adding complexing reagent in accordance with the present invention.

In the present invention the alkaline aqueous solution has a pH value higher than 7. Examples of the alkaline component in an aqueous solution is not particularly limited, but usually include ammonia. Other acceptable examples include ammonium bicarbonate or hydroxide of Quaternary ammonium salts, such as the hydroxide of Tetramethylammonium (TM), and hydroxide, trimethyl-2-hydroxyethylamine etc.. These compounds can be added separately or in mixture of two or more components, and the total concentration of the full solution of the composition for surface treatment may be adjusted between 0.001 to 30 wt.%. It is most preferable to use ammonia. According to the invention the concentration is preferably regulate in the range from 0.01 to 10 wt.%, more preferred in the range from 0.1 to 8 wt.% and most preferably in the range of from 0.2 to 4 wt.%.

It is also preferable to use alkaline electrolyzed ion water produced by the electrolysis of water. Further, such an alkaline aqueous solution was added hydrogen peroxide as oxidizing agent.

In the cleaning step of a semiconductor plate, when cleaning bare silicon (no oxidized film), it is possible to control the etching or the giving not the Onesti surface of the plate by introducing oxidant. In the case of hydrogen peroxide concentration mainly regulate within the concentration range from 0.01 to 30 wt.%. When used as the oxidant, the concentration of the oxidant is preferably adjust from 0.1 wt.% up to 25 wt.%. If the amount of oxidizing agent is too large, the complexing agent will decompose and the stability of the composition for surface treatment will become insufficient. Especially when hydrogen peroxide is used as oxidizing agent, the concentration of hydrogen peroxide is preferably in the range from 0.3 wt.% to 22 wt.%.

In a preferred manufacturing solution the ratio of purifying a mixture comprising water, hydrogen peroxide and ammonia is from about 20:5:1 to about 200:1:1 (H2O:H2About2:NH4OH).

The method of mixing the complexing reagent of the present invention with the composition for surface treatment is not particularly limited. Complexing reagent may be pre-mixed with one or more components of the components constituting the composition for surface treatment, and then these components can be mixed. Alternatively, the complexing agent may be mixed with a solution of the mixture obtained after mixing these components.

In the case of SC-1 cleaning the surface ol the lead through composition (ammonia + hydrogen peroxide + water + prevents precipitation of metal tool), but when the composition of the surface treatment used for a long time, the ammonia evaporates and prevents precipitation of metal tool gradually decomposes, thereby lowering the effect of preventing deposition of metal tools. Therefore, when the evaporated amount of ammonia added, such addition is conducted preferably using an aqueous solution of ammonia containing prevents precipitation of metal tool in the range from 10-7up to 5 wt.%, preferably from 10-6up to 1 wt.%. The composition of the surface treatment of the present invention is used for processing the surface, including cleaning, etching, polishing, film formation and the like, for substrates such as semiconductor, metal, glass, ceramics, plastic, magnetic material, the superconductor and the like, contamination of the metal impurity which becomes unacceptable. The present invention is preferably applied particularly to the cleaning or etching of the semiconductor substrate, the surface must be very clean. Among the operations for cleaning a semiconductor substrate, when the present invention is applied especially to alkaline cleaning with a cleaning solution including ammonia, hydrogen peroxide and water), the problem of this method of purification, that is, the problem of deposition IU aricescu impurities on the substrate, can be solved, and this clearance may be satisfactorily provided a very clean substrate surface without contaminating particles, organic materials and metals.

The reason why the composition for surface treatment of the present invention achieves a very satisfactory effect of preventing deposition of metal impurities, has not been elucidated so far.

When the composition of the surface treatment of the present invention is used as a cleaning solution for cleaning the substrate using a method of reduction treatment solution directly in contact with the substrate. Examples of this method of purification include immersing the type of purification, in which the substrate is dipped into the cleaning solution in the cleaning tank, the spray type of purification, in which the cleaning solution is sprayed on the substrate, the rotating type of purification, in which the cleaning solution is placed on a substrate rotating at high speed, etc.. In the present invention, among the above cleaning methods, it depends on the purpose to which the method is therefore used; but the method of purification of immersing type is preferred. Cleaning is performed within a reasonable time, preferably from several seconds to 15 minutes. If the cleaning time is too short, the cleansing effect is neudo retorically. On the other hand, if the time of cleansing is too long, it's pointless, because performance becomes insufficient, and the cleaning effect is not further increased.

As already mentioned, it is preferable that the cleaning could be carried out at ordinary temperatures, but it can be carried out at an elevated temperature to improve cleaning effect. Cleaning can be carried out in combination with a cleaning method that uses physical force. Examples of the cleaning method, using physical force, include ultrasonic cleaning, mechanical cleaning using the cleaning brush, etc.

In the present invention to obtain a composition for surface treatment complexing reagent can sometimes become a source of metal impurities. Ordinary reagent complexing reagent may contain metal impurities such as Fe, in number from a few to several thousand ppm. These metal impurities may be present as a stable complexes with the complexing reagent in the initial stage, but when the complexing reagent is used as the solution for surface treatment for a long time, complexing reagent may decompose and metals can be released and deposited on the surface of the substrate. is therefore engaged in long-term experiments using the cleaning solution according to the present invention, in order to assess the deposition of metals such as Fe, al, Ca or Al.

These experiments showed that the effect of preventing the deposition of metals on the surface of the substrate was maintained even after the solution for surface treatment was left to stand at a high temperature for a long period of time, whereas conventional composition led to an increased amount of deposition of metal during these experiments.

Industrial application

The composition for surface treatment of the present invention containing the specific complexing reagents, namely Bis Tris and/or NTA, as a preventive means from deposition of metal, protects the surface of the substrate from contamination by metal impurities such as Fe, Al, Zn and CA, from the composition for surface treatment, and consistently delivers extremely clean surface of the substrate. Additionally, the addition of these Bis Tris and/or NTA definitely increases the duration of the composition for surface treatment.

Especially, when the present invention is used for the alkaline treatment of the semiconductor substrate, represented by cleaning with a mixture of ammonia + hydrogen peroxide + water", this means the addition of Bis or Tris NTA only one or both in combination, as the description is of higher a common problem with this cleaning solved, and this clearance may be provided with a very clean surface of the substrate without particle contamination, organic materials and metals. Thus, traditionally used in acid cleaning, such as cleaning with a mixture of "hydrochloric acid + hydrogen peroxide + water", held after this purification can be omitted, and therefore can significantly reduce the cost of cleaning, the cost of the clean room, including equipment exhaust fan, etc. thus, this method is largely preferred in the industrial production of semiconductor integrated circuits.

Further, the present invention will be described in more detail with reference to Examples. However, it should be understood that the present invention is not limited to such specific Examples within the scope of the subject of the present invention.

Examples

Example 1

Investigated the stability of the bath SC-1 solution containing complexant. Control decomposition of H2About2- reinforced metal additives, shows the effectiveness of chelating agents in the cleaning solutions. Tests on the stability of the bath was performed in SC-1 (APM) solution with two different volumetric ratios (NH4HE is 28%/H2O231%/DI-N2Oh, and 1-5-20 1-1-200). SC-1 cleaning is the first solution, intentionally contaminated with 5 ppb of Fe or with a solution multi-element standard (Fe+Zn+CA+Al, each element 5 ppb)was used at a temperature of 70-75°C for approximately 60 minutes. The initial concentration of the chelating agent was of € 0.195 wt.% (figure 1).

Results purification of various cleaning solutions and comparing the quality of cleaning is shown in figure 2-12.

Example 2

In further experiments we tested the effectiveness of chelating agents to inhibit the deposition of metals on silicon surfaces. The Si substrate is pre-cleaned with SC-1 (1-5-20, 70-75°C, 10 min) and immersed in the above contaminated solutions for 10 minutes (1-5-20, 70-75°). Pollution solution contaminated with different amounts of Fe (1-100 ppb), were carried out without stirring. In addition, the substrates were washed with deionized water (5 minutes) and then dried by blowing with N2. The initial concentration of the chelating agent was of € 0.195 wt.%. Pollution of surface metals on silicon substrates was analyzed using X-ray fluorescence spectroscopy total reflection (TXRF) (table 1).

Table 1
The effectiveness of Bis Tris to inhibit the deposition of metals on silicon surfaces is t
Bis TrisFe in AWP [ppb]
[ppm]151050100
Link [0]2,820354436
After AWS,1,51<135
[1950]
Cleansing1,92035147
factor
Surface conc. [1012at/cm2] TXRF

Table 1: Study of the adsorption of Fe on the surface of the silicon arm (1-5-20)containing Bis Tris; 70-75°C, 10 minutes. (Curve comparison: surface conc. without Bis, Tris).

Example 3

In addition, the removal efficiency of chelating agent with silicon surfaces in the SC-1 solution was studied using TXRF. Si-substrates previously contaminated solution, as in SC-1 (1-5-20, 70-75°C, 10 minutes)containing various amounts of Fe (5 ppb, 50 ppb). Contaminated substrates are then immersed in the SC-1 solution (1-5-20, 70-75°C, 10 minutes), with the holding chelating agent. The initial concentration of the chelating agent was of € 0.195 wt.% (table 2).

Table 2
The concentration of Fe on silicon surfaces in the SC-1
Bis Tris [ppm]Fe on Si substrate [1012at/cm2]
5 ppb in the SC-150 ppb in the SC-1
before SC-1after SC-1before SC-1after SC-1
[1950]˜14˜1˜27˜DL*
Factor removal˜14˜27-54*
*DL, detection Limit (5×1011at/cm2)

Table 2: removal Efficiency of chelating Bis Tris; 70-75°C, 10 minutes

1. The cleaning solution for the processes of surface treatment in which the metal contamination by impurity becomes unacceptable, including alkaline compound, hydrogen peroxide, water, and 2,2-bis-(hydroxyethyl)-(iminutes)-(hydroxymethyl)methane, [Bis Tris] as a chelating additive.

2. The cleaning solution according to claim 1, characterized in that the alkaline compound selected from the group consisting of org is practical grounds, ammonia, ammonium hydroxide, hydroxide of Tetramethylammonium.

3. The cleaning solution according to claim 1, characterized in that the alkaline compound selected from the group consisting of ammonia and ammonium hydroxide.

4. The cleaning solution according to one of claims 1 to 3, characterized in that it includes 2,2-bis-(hydroxyethyl)-(iminutes)-(hydroxymethyl)methane, [Bis Tris] number in the range of 1000-3000 ppm.

5. Method of purification of semiconductor(s) of the substrate(s), which includes the processing of semiconductor(s) of the substrate(s) cleaning solution on one or more of claims 1 to 4, and drying the specified semiconductor(s) of the substrate(s) after washing with water.

6. The processing method according to claim 5, characterized in that the processing of cleaning solution performed at a temperature in the range of 20-80°C.

7. The processing method according to claim 5, characterized in that the processing of cleaning solution perform at normal room temperature.

8. The processing method according to claim 5, characterized in that the cleaning solutions according to claims 1 to 4 is brought into contact with surfaces that must be cleaned, in the course of time from a few seconds to 60 minutes

9. The processing method according to claim 5, characterized in that the cleaning solutions according to claims 1 to 4 is brought into contact with surfaces that must be cleaned, during the time from 15 sec to 15 min

10. The method of processing a semiconductor(s) of the substrate(s) by one the mu of pp.5-9, characterized in that the semiconductor(s) of the substrate(s) submerged/immersed in the cleaning solution (cleaning by immersion).

11. Use the cleaning solutions according to one of claims 1 to 4 for processes of surface treatment, including cleaning, etching, polishing, film formation, for cleaning substrates such as semiconductor, metal, glass, ceramics, plastics, magnetic materials, superconductors.



 

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The invention relates to pre-treatment of contaminated tissues, to compositions suitable for use in pre-processing and pre-processing

The invention relates to containing a peroxy bleach compound, designed for pre-treatment of tissues, and to a method of pre-processing of fabrics

The invention relates to a method of pre-treatment of the contaminated fabrics with a liquid composition containing a peroxide bleaching agent and an agent that removes impurities selected from the group comprising ethoxylated monoamine, ethoxylated diamine, ethoxylated polyamine and polymeric ethoxylated amine and mixtures thereof

FIELD: detergent for metal surface cleaning from oil, mineral oils and their decomposition products.

SUBSTANCE: claimed detergent as degreasing composition contains (mass %) sodium carbonate peroxysolvate Na2CO3·1,5 H2O2 2.0-3.5 and sodium fluorosilicate 2.0-3.5; and balance: water. Detergent of present invention is useful in washing of machine and device part from oil contaminants as well as in washing machines during in-process cleaning.

EFFECT: working solution with decreased temperature without losses of detergency.

1 tbl

FIELD: chemistry.

SUBSTANCE: invention pertains to compositions used for treating surfaces and the method of treating the surface of a substrate, using such a composition. The essence of the invention is that, the cleaning solution contains water, hydrogen peroxide, an alkaline compound and 2,2-bis-(hydroxyethyl)-(iminotris)-(hydroxymethyl)methane as a chelating additive. The alkaline compound is preferably chosen from a group containing an organic base, ammonia, ammonium hydroxide, tetramethylammonium hydroxide, and most preferably from a group containing ammonia and ammonium hydroxide. Content of the chelating additive is 1000-3000 ppm. The cleaning solutions are used for the process of treating the surface, including cleaning, etching, polishing, and film-formation, for cleaning substrates, made from semiconductor, metal, glass, ceramic, plastic, magnetic material, and superconductors. The method involves treatment of semiconductor substrate(s) using a cleaning solution and drying the given semiconductor substrate(s) after washing in water.

EFFECT: increased stability of the solution at high temperature and increased degree of purification of surfaces.

3 cl, 2 tbl, 15 dwg, 3 ex

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