Method (variants) and system (variants) for treatment of semi-conductor instruments base plates

FIELD: methods for manufacture of semi-conductor instruments and microcircuit chips.

SUBSTANCE: method and system are suggested for treatment of base plates for treatment of semi-conductor instruments with creation of liquid meniscus that is shifted from the first surface to the parallel second one, which is installed nearby. System and method suggested in invention may also be used for meniscus shift along base plate edge.

EFFECT: invention provides efficient cleaning and drying of surfaces and edges of semi-conductor plates, with simultaneous reduction of quantity of water or washing liquid drops that are accumulated on plate surface, which leave dirty traces on plate surface and edge after evaporation.

20 cl, 20 dwg

 

The text descriptions are given in facsimile form.

1. The processing method of a substrate for semiconductor devices with the creation of the meniscus of the liquid transferred from the first surface to the second surface, the implementation of which form a meniscus between the first surface and a proximity head having the surface of the head, which is placed mostly parallel to the specified first and second surfaces and which made several outlet holes and a few of the inlet holes, while Inuktitut selected fluid from the first group of holes between the said surface of the head and the first surface and generate a vacuum in the second group of holes between the surface of the head and the first surface, and move the meniscus from the first surface to the second surface, adjacent and in the same plane with the first surface the stew.

2. The method according to claim 1, wherein when moving the meniscus from the first surface to the second surface of the first part of the meniscus is held between the first part of the specified surface of the head and the first surface and the second part of the meniscus is held between the second part of the surface of the head and the second surface.

3. The method according to claim 1, in which the meniscus also move from the second surface to the first surface.

4. System for processing substrates for semiconductor devices with the creation of the meniscus of the liquid, comprising a first surface, a second surface that is essentially in the same plane with the first surface, and a movable contactless head mounted for movement in the first direction essentially perpendicular to the first and second surfaces and in a second direction essentially parallel to the first and second surfaces and forming a meniscus between the proximity head and at least one of the first or second surfaces, and a non-contact head has a surface head, placed mainly parallel to the first and second surfaces and which made several outlet holes and several inlet holes with the possibility in the formation of the meniscus injection box is selected fluid from multiple inlet holes m is waiting for the specified surface of the head and the first surface and creates a vacuum in several outlet openings between the surface of the head and the first surface.

5. The system according to claim 4, in which the second surface is a substrate and the first surface is made in the form of a plate located on the side and mostly around the substrate.

6. The processing method of a substrate for semiconductor devices with the creation of the meniscus of the liquid, having an optimized gradient of surface tension, in the exercise of which is selected by the first material for the manufacture of the first surface, the choice of the second material for the second surface, characterized by their hydrophilic properties from the first material and the first surface is a surface of the proximity head and the second surface of the substrate, and a non-contact head has a surface of the head, which made several outlet holes and a few of the inlet holes, and form a meniscus between the first and second surfaces.

7. The processing system of a substrate for semiconductor devices with the creation of the meniscus of the liquid, having an optimized gradient of surface tension, comprising a first surface, made of a first material and a second surface made of a second material, which according to its hydrophilic properties different from the first material, and located essentially parallel to the first surface beside her, and the first surface is a face is a surface of the proximity head, capable of forming a meniscus between the surface of the head and the second surface and having several outlet holes and a few of the inlet holes formed in the surface of the head with the possibility of the formation of the meniscus, including the injection box is selected fluid from multiple inlet openings between the said surface of the head and the first surface and creates a vacuum in several outlet openings between the surface of the head and the first surface.

8. The processing method of a substrate for semiconductor devices with the creation of the liquid meniscus to process the edges of the substrate, the implementation of which form a meniscus in the concave part of the non-contact head, which may include at least part of the edge of the substrate, and this concave portion of the head has a surface of the head, which made several outlet holes and a few of the inlet holes, while Inuktitut selected fluid from multiple inlet holes in the concave portion of the head and create a vacuum in several outlet openings in the concave part of the head,

and move the meniscus at the edge of the substrate, so that the leading edge of the meniscus is divided into two parts, the first of which is held between the upper surface of the substrate and corresponding to the upper part of the inner top of the spine head, and the second is held between the bottom surface of the substrate and corresponding to the lower part of the inner surface of the head.

9. The method according to item 8, during which the substrate is based on located on the side of her movie, including specified contactless head, by means of which it formed a meniscus then move to the edge of the substrate.

10. The method according to claim 9, in which the meniscus is removed from the edge of the substrate.

11. The method according to claim 8, in which the moving meniscus increase its size.

12. The method according to claim 8, in which the substrate has the shape of a circle passing through the circumferential edge of the substrate, at least part of which is included inside of the meniscus.

13. The method according to claim 8, in which the moving edge of the substrate relative to the proximity head, so that the meniscus moves along the edge of the substrate.

14. The method according to claim 8, in which the meniscus is removed from the edge of the substrate so that the first and second parts of the leading edge of the meniscus closed and again form the leading edge of the meniscus.

15. The method according to claim 8, in which the substrate has the shape of a circle passing through the circumferential edge of the substrate, the meniscus formed on an arc around at least part of the circumference of the substrate.

16. System for processing substrates for semiconductor devices with the creation of the meniscus of the fluid processing region of a substrate, comprising located sboc is from the substrate roller, the first is located on the roller in close proximity to the edge of the substrate forming the meniscus contactless head, which has a concave section, inside of which can enter the edge of the substrate, and plenty of outdoor on a concave part of the head channel, at least one of which Inuktitut fluid, at least one of them use to create a vacuum and at least one of them used to regulate the surface tension of the meniscus.

17. System according to clause 16, in which the substrate has the shape of a circle passing through the circumferential edge of the substrate, and the first contactless head capable of forming a meniscus, which covers at least a portion of the circumference of the substrate.

18. System for processing substrates for semiconductor devices with the creation of the meniscus of the fluid processing region of a substrate, comprising the non-contact head, which has a concave section, inside of which can enter the edge of the substrate, and plenty of outdoor on a concave part of the contactless head of channels, at least one of which Inuktitut fluid, at least two or more of them are used to create a vacuum and at least one of them used to regulate the surface tension of the meniscus.

19. System p, in which the substrate is circular with PR is walking around the circumference of the edge of the substrate, and non-contact head has a curved surface that is located around at least part of the circumference of the substrate.

Priority items:

31.03.2003 - claims 1 to 7;

24.06.2003 - PP-19.



 

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