Method of forming thin films, device for forming thin films, and thin film forming process monitoring method

FIELD: inorganic chemistry.

SUBSTANCE: invention relates to the method of forming thin films of oxide on the surface of carrying base, a device for forming thin films (variants), and thin film forming process monitoring methods, and can be used during production of packages in different industries. A gaseous mixture containing gaseous monomer and an oxidising reaction gas is converted into plasma by changing the ratio of the gaseous monomer flow value to the reaction gas flow value so that the said ratio is within a set range of over 0 to 0.05. This allows to form thin films with gas protection properties stably and without deviations. In the process of thin film formation, it is determined if a thin film with the required surface properties is formed, by measuring the intensity of the α line of hydrogen and the oxygen emission, which are radiated by the plasma during the thin film formation. The measured values are compared to the corresponding reference intensity values, at which thin films with required layer properties were obtained. The corresponding devices are also developed for the forming and monitoring methods.

EFFECT: formation of thin films with gas protection properties.

17 cl, 11 dwg, 19 ex, 6 tbl

 

The text descriptions are given in facsimile form.

1. Method of forming thin films by means of turning into a plasma gas mixture comprising a gaseous monomer and oxidizing reactive gas, and the formation of thin films on the surface of the substrate, and a thin film formed of oxide comprising the first stage of forming the first thin film by transformation into the plasma of the gas mixture to change the ratio between the flow of gaseous monomer relative to the reactive gas, provided that the relationship is of flow is within the specified range greater than 0 to 0.05.

2. The method according to claim 1, in which the ratio of flow continuously decreases in the first stage of formation of the thin film.

3. The method according to claim 2, in which the initial value of the ratio of flow in the first stage of formation of the thin film is in the range from 0.02 to 0.2.

4. The method according to claim 2 or 3, further comprising a second stage of forming a thin film with increasing ratio of flow after the first stage of formation of a thin film.

5. The method according to claim 4, in which the gas mixture is turned into plasma in the management of the reflected power so that it was 10% or less of the applied high-frequency power, and reflected power generated when applying a high frequency power with a frequency of 100 MHz or below for high-frequency electrode through the circuit impedance matching.

6. Apparatus for forming thin films by means of turning into a plasma gas mixture comprising a gaseous monomer and reacting the oxidizing gas, and the formation of thin films of oxide on the inner surface of the cylindrical containers having a closed end containing a number of chambers for the formation of thin films, each of which is provided with a cylindrical high-frequency electrode, one end of which is closed so that the cylinder could be placed on what nutrena the surface of the high-frequency electrode, and is equipped with a grounded electrode placed in a cylindrical tank having in its end part of the gas-generating port, configured to generate a gas mixture, the block of the high-frequency power applying high-frequency power to the number of chambers for the formation of thin films and is equipped with a scheme for impedance matching and a source of high frequency power applying high-frequency power to the high frequency electrode through the circuit impedance matching, and the control unit of flow to control the ratio of flow of the gaseous monomer and the reaction gas contained in the gas mixture, while the high-frequency power to block high-frequency power is supplied to the set of chambers for forming thin films.

7. The device according to claim 6, in which between the cylindrical container and the high-frequency electrode is removable insert, formed of insulating material.

8. The device according to claim 6 or 7, in which the gas-generating port has at least one hole with a diameter of 5 mm or less and/or the slit width of 0.5 mm or less.

9. The device according to claim 8, in which the average surface roughness of the outer surface of the grounded electrode is 5 to 50 μm.

10. The device according to claim 9, in which at least part of the outer surface of the grounded electrode is provided with a removable protective tube and the average surface roughness of the outer surface of the protective tube is 5 to 50 μm.

11. The device according to claim 10, in which the outer surface having an average surface roughness, napalan metal or ceramic material.

12. Method of monitoring the formation of thin films by means of turning into a plasma gas mixture comprising a gaseous organosilicon compound and an oxidizing gas, and forming a thin film of silicon oxide on the surface of the substrate, including the measurement of the intensity of the alpha rays of hydrogen emitted by the plasma, and radiation intensity of oxygen; comparing the intensity of the alpha-rays hydrogen and emission intensity of oxygen measured by the intensity of the alpha-rays hydrogen and measured emission intensity of oxygen, in which a thin film of silicon oxide has the desired quality of the surface; and determining, whether formed by a thin film of silicon oxide having the desired surface quality.

13. The method according to item 12, in which the intensity of the alpha rays of hydrogen and the radiation intensity of oxygen is measured through the release of radiation, which has a specific range of wavelengths from the radiation emitted by the plasma, and measuring the intensity of the selected radiation.

14. The method according to item 12, in which the intensity of the alpha rays of hydrogen and the radiation intensity of the oxygen measure p is the measurement of the radiation intensity, which has a range of wavelengths (656±5) nm and intensity of radiation that has a wavelength range (777±5) nm, in the midst of all the radiation emitted by the plasma.

15. Apparatus for forming thin films containing chamber for conversion into a plasma gas mixture comprising a gaseous organosilicon substances and oxidizing gas, and to form a thin film of silicon oxide on the surface of the substrate, measuring unit for measuring the intensity of the alpha-rays hydrogen and emission intensity of oxygen emitted by the plasma in the chamber, a storage unit for recording the intensity of the alpha-rays hydrogen and emission intensity of oxygen, in which a thin silicon film has a predetermined desired surface quality, and a determining unit for determining whether the measured intensity of the alpha-rays hydrogen and the measured radiation intensity of oxygen in the prescribed range, by comparing the measured intensity of the alpha rays of the hydrogen with the intensity of the alpha rays of hydrogen in the storage unit, and by comparing the intensity of radiation of oxygen measured by the measuring unit, with the emission intensity of oxygen, which is recorded in the storage unit.

16. The device according to item 15, in which the measuring unit is equipped with a bandpass filter to provide the help only of the radiation, which has a specific range of wavelengths from the radiation emitted by the plasma in the chamber.

17. The device according to item 15, in which the measuring unit includes a first band-pass filter, the transmittance for radiation having a wavelength outside of the range (656±5) nm, is 1% or below, the second band-pass filter, the transmittance for radiation having a wavelength outside of the range (777±5) nm, is 1% or below, the first photosensitive element which receives the radiation that has passed through the first bandpass filter and the second light-sensitive element which receives the radiation that has passed through the second bandpass filter.



 

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