RussianPatents.com
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Microwave power limiter and method for its assembling. RU patent 2323510. |
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FIELD: superhigh-frequency radio engineering; diode-type power limiters; protection of radar receivers against impact of high-power microwave signal. SUBSTANCE: diodes are disposed in two-step cylindrical package with insulating washings in each step to carry input and output transmission lines contacting internal conductor which is coaxial with respect to package through insulating bushings. Cooling ribs disposed on package provide for transferring heat from diodes in the course of device operation when high-level power is passed to input transmission line. Proposed method for assembling the limiter makes it possible to dispose internal conductor and diodes within package by means of auxiliary cylinders. EFFECT: reduced level of microwave power arriving at radar receiving path down to value admissible at moment of high-power pulse radiation from home radars and its protection against asynchronous high-power radiation from outside radars. 3 cl, 1 dwg
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Microwave diplexer / 2321108 Proposed microwave diplexer has device for splitting input power into two channels made in the form of directional coupler, two low-pass band filters, and matched load. Input of one low-pass filter is connected to output of directional coupler main arm. Input of second low-pass filter is connected to output of directional coupler associated line. Output of second low-pass filter is connected to input of matched load. |
Microwave filter / 2321107 Proposed microwave filter has resonator incorporating below-cutoff waveguide section accommodating resonators and resonant-frequency adjusting device. Pairs of resonators and adjusting screws are alternating with pairs of adjusting screws disposed on opposite walls of below-cutoff waveguide. |
Microwave phase shifter / 2321106 Proposed microwave phase shifter has two transmission lines of similar wave impedance ,one of them being designed for microwave signal input and other one, for its output; two Schottky-barrier field-effect transistors; inductance coils of same rating; and capacitors of either different or same rating. Source of first Schottky-barrier field-effect transistor is connected to transmission line at input and to one of first inductance coil leads; drain is connected through first capacitor to transmission line at output and to one of second inductance coil leads. Drain of second Schottky-barrier field-effect transistor is connected to other leads of both inductance coils and to one of leads of second capacitor; source and other lead of second capacitor are grounded. Gates of Schottky-barrier field-effect transistors are interconnected and connected to one DC control voltage supply. |
Microstrip impedance transformer / 2320057 Proposed microstrip impedance transformer has insulating substrate one of whose sides carries two impedance conductors of different wave impedances as well as frequency-selective transformer section in-between made in the form of pinned impedance strip with at least four pins disposed symmetrically relative to its base and two inclined cleats joined with metal shield. Sum of double length of first pin and width of strip base equals one fourth of retarded wavelength and also equals width of impedance conductor of lower wave impedance. |
Microstrip impedance transformer / 2320057 Proposed microstrip impedance transformer has insulating substrate one of whose sides carries two impedance conductors of different wave impedances as well as frequency-selective transformer section in-between made in the form of pinned impedance strip with at least four pins disposed symmetrically relative to its base and two inclined cleats joined with metal shield. Sum of double length of first pin and width of strip base equals one fourth of retarded wavelength and also equals width of impedance conductor of lower wave impedance. |
Directional filter / 2317634 Directional filter contains two low-and-high-pass filters, a T-joint and two two-channel commutators. Channels of commutator rotors are coupled with shoulders of T-joint, which amount to λ/4 or λ/2 respectively with consideration of rotor channel lengths, where λ - wave length on shoulders of the T-joint. |
Microwave filter / 2316087 Proposed microwave filter has cavity, temperature compensation device , and stop with threaded hole accommodating frequency adjuster in the form of screw. The latter and cavity are made of materials having different temperature coefficient of linear expansion. Screw is designed for deforming elastic cavity wall and is assembled of internal and external screws made of material s having different temperature coefficients of linear expansion. External screw has internal threaded hole accommodating internal screw. |
Microwave filter / 2316087 Proposed microwave filter has cavity, temperature compensation device , and stop with threaded hole accommodating frequency adjuster in the form of screw. The latter and cavity are made of materials having different temperature coefficient of linear expansion. Screw is designed for deforming elastic cavity wall and is assembled of internal and external screws made of material s having different temperature coefficients of linear expansion. External screw has internal threaded hole accommodating internal screw. |
Microwave phase shifter / 2316086 Proposed microwave phase shifter has two transmission lines of equal wave impedance, one of them being designed for microwave signal input and other one, for its output, two Schottky-barrier field-effect transistors, and transmission line section whose length equals half the wavelength in transmission line. Source of Schottky-barrier field-effect transistor is connected to transmission line at input, drain, to transmission line at output and to one of transmission line section ends. Other end of transmission line section is connected to transmission line at input. Drain of second Schottky-barrier field-effect transistor is connected to transmission line section at distance equal to quarter-wavelength in transmission line from any of its ends; transistor source is grounded. Gates of Schottky-barrier field-effect transistors are interconnected and connected to one DC control voltage supply. |
Microwave attenuator / 2314603 Proposed microwave attenuator has at least one attenuator stage incorporating circuit of three resistors of which at least one resistor is connected in series and two other ones, in parallel with transmission lines at attenuator input and output, as well as three electronic switches in the form of Schottky-barrier field-effect transistors. Newly introduced in each attenuator stage are two transmission-line sections whose length equals quarter-wavelength in transmission line and whose wave impedance is higher than that of transmission line at attenuator input and output. One end of each transmission-line section is connected to one end of respective parallel-connected resistor and other end, to drain of respective Schottky-barrier field-effect transistor. Gates of three Schottky-barrier field-effect transistors are interconnected and connected to one DC control voltage supply. |
Microwave diplexer / 2321108 Proposed microwave diplexer has device for splitting input power into two channels made in the form of directional coupler, two low-pass band filters, and matched load. Input of one low-pass filter is connected to output of directional coupler main arm. Input of second low-pass filter is connected to output of directional coupler associated line. Output of second low-pass filter is connected to input of matched load. |
Microwave filter / 2321107 Proposed microwave filter has resonator incorporating below-cutoff waveguide section accommodating resonators and resonant-frequency adjusting device. Pairs of resonators and adjusting screws are alternating with pairs of adjusting screws disposed on opposite walls of below-cutoff waveguide. |
Microwave phase shifter / 2321106 Proposed microwave phase shifter has two transmission lines of similar wave impedance ,one of them being designed for microwave signal input and other one, for its output; two Schottky-barrier field-effect transistors; inductance coils of same rating; and capacitors of either different or same rating. Source of first Schottky-barrier field-effect transistor is connected to transmission line at input and to one of first inductance coil leads; drain is connected through first capacitor to transmission line at output and to one of second inductance coil leads. Drain of second Schottky-barrier field-effect transistor is connected to other leads of both inductance coils and to one of leads of second capacitor; source and other lead of second capacitor are grounded. Gates of Schottky-barrier field-effect transistors are interconnected and connected to one DC control voltage supply. |
Microstrip impedance transformer / 2320057 Proposed microstrip impedance transformer has insulating substrate one of whose sides carries two impedance conductors of different wave impedances as well as frequency-selective transformer section in-between made in the form of pinned impedance strip with at least four pins disposed symmetrically relative to its base and two inclined cleats joined with metal shield. Sum of double length of first pin and width of strip base equals one fourth of retarded wavelength and also equals width of impedance conductor of lower wave impedance. |
Microstrip impedance transformer / 2320057 Proposed microstrip impedance transformer has insulating substrate one of whose sides carries two impedance conductors of different wave impedances as well as frequency-selective transformer section in-between made in the form of pinned impedance strip with at least four pins disposed symmetrically relative to its base and two inclined cleats joined with metal shield. Sum of double length of first pin and width of strip base equals one fourth of retarded wavelength and also equals width of impedance conductor of lower wave impedance. |
Directional filter / 2317634 Directional filter contains two low-and-high-pass filters, a T-joint and two two-channel commutators. Channels of commutator rotors are coupled with shoulders of T-joint, which amount to λ/4 or λ/2 respectively with consideration of rotor channel lengths, where λ - wave length on shoulders of the T-joint. |
Microwave filter / 2316087 Proposed microwave filter has cavity, temperature compensation device , and stop with threaded hole accommodating frequency adjuster in the form of screw. The latter and cavity are made of materials having different temperature coefficient of linear expansion. Screw is designed for deforming elastic cavity wall and is assembled of internal and external screws made of material s having different temperature coefficients of linear expansion. External screw has internal threaded hole accommodating internal screw. |
Microwave filter / 2316087 Proposed microwave filter has cavity, temperature compensation device , and stop with threaded hole accommodating frequency adjuster in the form of screw. The latter and cavity are made of materials having different temperature coefficient of linear expansion. Screw is designed for deforming elastic cavity wall and is assembled of internal and external screws made of material s having different temperature coefficients of linear expansion. External screw has internal threaded hole accommodating internal screw. |
Microwave phase shifter / 2316086 Proposed microwave phase shifter has two transmission lines of equal wave impedance, one of them being designed for microwave signal input and other one, for its output, two Schottky-barrier field-effect transistors, and transmission line section whose length equals half the wavelength in transmission line. Source of Schottky-barrier field-effect transistor is connected to transmission line at input, drain, to transmission line at output and to one of transmission line section ends. Other end of transmission line section is connected to transmission line at input. Drain of second Schottky-barrier field-effect transistor is connected to transmission line section at distance equal to quarter-wavelength in transmission line from any of its ends; transistor source is grounded. Gates of Schottky-barrier field-effect transistors are interconnected and connected to one DC control voltage supply. |
Microwave attenuator / 2314603 Proposed microwave attenuator has at least one attenuator stage incorporating circuit of three resistors of which at least one resistor is connected in series and two other ones, in parallel with transmission lines at attenuator input and output, as well as three electronic switches in the form of Schottky-barrier field-effect transistors. Newly introduced in each attenuator stage are two transmission-line sections whose length equals quarter-wavelength in transmission line and whose wave impedance is higher than that of transmission line at attenuator input and output. One end of each transmission-line section is connected to one end of respective parallel-connected resistor and other end, to drain of respective Schottky-barrier field-effect transistor. Gates of three Schottky-barrier field-effect transistors are interconnected and connected to one DC control voltage supply. |
Microwave diode shunt-fed antenna polyplexer / 2244989 Proposed polyplexer designed for alternate connection of receiver and transmitter to multielement transceiving antenna such as phased array has its pin-diodes connected in series-parallel circuit of transmission line incorporating quarter-wavelength sections for on-off operation in transmit-receive mode without feeding control currents; switching section of transmission line such as that of microstrip feeder line of phased array is connected in composite four-channel circuit where transmitter output is connected through quarter-wavelength matching transformer and common microwave power distribution point to four antenna radiators, respectively, using diode shorted out by compensating inductance coil and series-connected between common point of microwave power distribution and antenna radiator, one diode per radiator; each antenna radiator is connected, in its turn, to respective input of receiver through two quarter-wavelength microstrip sections provided with grounded diodes parallel-connected at boundary of each section, one diode per radiator, two microstrip components such as those in the form of feeder line sections of wave impedance higher by 20 - 30% than that of main feeder line being separated symmetrically with respect to point of connection of each diode to boundary of quarter-wavelength section of two microstrip components. |
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