Device for growing shaped sapphire monocrystal

FIELD: crystal growth.

SUBSTANCE: device comprises vacuum chamber with melting pot and molding unit, wolfram heater, shields, rod with the holder for seed provided with a mechanism for lifting crystal and mounted outside of the chamber, and melt make-up system made of a hopper with tube and system for control of heating and rate of crystal lift. The device is additionally provided with roasting vacuum chamber that is mounted above the chamber with melting pot and molding unit coaxially to it and the system for synchronization of mass of the crystal to be grown and the flow rate of the make-up material. The roasting chamber has autonomous heater whose height is equal or exceed the maximum size of the length of the crystal to be grown. The diameter of the roasting chamber is 0.6-0.9 of the diameter of the bottom chamber. The baffle provided with openings for the rod with seed holder is interposed between the chambers.

EFFECT: enhanced quality of crystal.

6 cl, 2 dwg

 

The invention relates to the field of growing single crystals of refractory oxides from the melt by the method of directional solidification and can be used to obtain single crystals of sapphire, the relevant requirements of optoelectronics.

A device for growing single crystals based on complex oxides which are sealed chamber in which is mounted a vertical movable and rotatable rod with attached seed, water-cooled coil connected to a source of induction heating, water-cooled bottom, made in the form of a spiral, the crucible, made with a hole at the bottom and fixed inside the inductor in a stationary position, the boot device in the form of a sealed hopper feeder with mixture and feeding tube. The internal volume of the crucible filled with the melt, from which the growing crystal and the melt in the growth process is fed into the crucible through the bottom hole of the additional volume formed by the gap between the crucible and the coil. This device is intended primarily for growing alyumoittrievy garnets and does not provide the possibility of growing single crystals of sapphire (USSR Author's certificate No. 904347, SW 15/12, publ. 1993).

Closest to the position of the volume and shape of grown monoc is Estella, technical essence and the achieved result is a device for growing single crystals of sapphire, containing installed in a vacuum chamber screens, heater, structurally with fixed therein by the seed crystal, the crucible with the lid and the shaper, the speed regulation system of lifting the seed crystal and the power of the heater in which the camera cover fortified bunker, made in the form of a cylinder with a conical top and bottom, the lower part contains the shut-off valve in the form of a truncated cone, the upper part of the hopper has a bellows, which is connected with the shut-off valve with stem, provided with a mechanism to automatically move the lower part of the hopper tightly inserted the tube is lowered into the crucible through the hole in the lid of the crucible (EN 2232832 C1, 20.07.2004). The device allows the use of powdered aluminum oxide and provides obtaining single crystals weighing 12 kg with characteristics to meet the requirements of optoelectronics, and yield not lower than 50%. However, obtaining large crystals with cross-sectional dimension of more than 200 mm and crystallographic orientation of <1010> or <1102> disadvantages are the presence of voids with a diameter of less than 50 microns and high energy costs, significantly affects the value and products.

The technical result of the invention is to eliminate the hidden cavities of a diameter less than 50 microns in obtaining crystals with cross-sectional dimension of more than 200 mm and crystallographic orientation of <1010> or <1102> while simultaneously reducing energy consumption by 3-4 times. In addition, the device allows to obtain single crystals with low residual value of the internal stress, which is important for further mechanical processing of the crystals

This technical result is achieved in that the device for growing shaped single crystals of sapphire, containing a vacuum chamber with a crucible and a shaper, tungsten heater, screens, stem with structuralism equipped with a lifting mechanism of crystal installed outside the chamber, the feed control of the melt in the form of a hopper with a tube and control systems heating and lifting speed of the crystal, according to the invention further comprises a vacuum chamber annealing installed over the camera with the crucible and the shaper coaxially with it, and the synchronization system of the mass of the grown crystal and the flow of feed material Luggage annealing has a heater, the height of which is equal to or exceeds the maximum size the length of the crystal, the diameter of the camera annealing is 0.6 to 0.9 of the diameter of the lower chamber, m is waiting cameras installed partition with holes for rod with structuralism, as-grown crystals and make-up, on the top edge of the crucible is set plate with slots, with plenty of slots parallel to each other and two walls shaper has a width of 50-100 μm and is located at a distance from each other 70-120 μm within the space bounded by two perpendicular slits with a width of 1-1,5 mm, and the ends of the slots made deaf.

In addition, the synchronization system contains sensors differential weighting of the crystal and the flow of feed material, the rod is equipped with a mechanism for axial rotation, a partition between the chambers is made of tungsten or molybdenum sheet, the partition between the chambers are made with adjustable holes, the plate with slits made of tungsten or molybdenum sheet, camera and part of the stem, outside cameras, equipped with a water quench system.

The device, named "Profile", and the fragment shown in figure 1 and 2.

The device shown in figure 1, includes a vacuum chamber (1), which coaxially it installed vacuum chamber annealing (2)having a diameter of 0.6 to 0.9 of the diameter of the lower chamber. Chambers separated by a partition wall (9), with holes for rod with structuralism (7) and as-grown crystals, and also for receiving feed material from the feed system and (8) in the crucible (3) shaper (4). Stock in addition to the lifting mechanism is equipped with axial rotation mechanism (not shown). Mainly the partition between the chambers is made of tungsten or molybdenum sheet, the partition between the chambers are made with adjustable holes. In the lower chamber with the crucible has a heater (5)in the upper chamber used for annealing of single crystals, installed heater (6), the height of which is equal to or greater than the length of the grown crystal. The lower chamber is equipped with a door, the upper chamber - an observation window (not shown). The synchronization system of the mass of the crystal and the flow of feed material (12) includes sensors differential weighing (11)mounted respectively on the rod (7) and the system of feeding (8).

On the top edge of the crucible is set plate with the slots (10) mainly of tungsten or molybdenum. Many of the slots are parallel to each other and two walls shaper has a width of 50-100 μm and spaced from each other 70-120 μm within the space bounded by two perpendicular slits with a width of 1-1,5 mm, and the ends of the slots made deaf.

The cameras have shields (13). Chilled water generating systems, power control of the heaters and the lifting speed of the crystal is not shown.

N the figure 2 shows the plate with slits.

The operation of the device

In the crucible (3) coaxially he put the shaper (4) and fill the entire volume of the initial charge in the form of crushed pieces of sapphire or granules of aluminum oxide in an amount to provide a filling volume of the melt. Through the door at the bottom of the camera or through the adjustable opening in the septum between cameras crucible (3) placed in the lower vacuum chamber (1) coaxial heater (5). On the upper edge of the crucible install the plate with the slots (10). Insert and center in structurale mounted on the rod (7), the seed crystal. Camera (1) and (2) is pressurized and vacuum up (1-5)×10-5mm Hg Feeding power to the lower heater, heat the crucible to the melt temperature of 2100°and maintain the melt prior to its homogenization in 2-3 hours. Then reduce the temperature to 2050°and lower the seed crystal to plate (10), where the contact of the seed crystal with the melt penetrating through the slots constituting the capillary channels. After exposure for 1-3 minutes the seed crystal lift with speed, due to the shape and size of the transverse size of the grown single crystal. After establishing temperature equilibrium, when the seed crystal is not already fused on the surface of the melt, the crystal does not grow (PR is approximately 20-30 minutes from the start of the ascent), the temperature decrease for a given program and synchronize the weight of the growing crystal and the flow of feed material in the form of granules.

Plate with slits (10) provides a convex to the melt crystallization front, resulting uniformity of location of the centers of crystallization (sources of growth steps), and the absence of plastic deformation, which causes the occurrence of crystal defects. The size and location of the slots for the most promising for use in optoelectronics large size single crystals of sapphire with a side of more in diameter is 200 mm and the crystallographic orientation of <1010> or <1102> determined by experiment.

After reaching the growing crystal bottom area of the heater (6), it serves power, providing the temperature of the crystal is approximately 1200°gradually raising it up to 1800°C. When the crystal reaches the specified length, the power flow to the lower heater (5) stop. The opportunity provided by the device, significantly (3-4 times) to reduce energy consumption. Due to the constructive design of the upper chamber used for annealing (namely due to a given value of the diameters of the chambers), the grown crystal is uniform temperature field with the required temperature. After exposure the of rystall at 1800° With in 2-3 hours power heater (6) reduce, providing cooling of the crystal to room temperature at 50°C/hour.

The result is a single crystal containing no bubbles with diameter less than 50 microns. The presence of hidden voids that are not visible to the naked eye, the technology is usually a difficult task, and this defect significantly limits the scope of single crystals of sapphire. In addition, the device allows to obtain single crystals with low residual value of the internal stress, which is important for further mechanical processing of the crystals.

Thus, the essential characteristics of this invention provides for the achievement of the technical result consists in the elimination of hidden voids with a diameter of less than 50 microns in obtaining crystals with cross-sectional dimension of more than 200 mm and crystallographic orientation of <1010> or <1102> while simultaneously reducing energy consumption in 3-4 times and reducing the size of the residual internal stress.

1. Device for growing shaped single crystals of sapphire, containing a vacuum chamber with a crucible and a shaper, tungsten heater, screens, stem with structuralism equipped with a lifting mechanism of crystal installed outside the chamber, the system modedisplay in the form of a hopper with a tube and control systems heating and lifting speed of the crystal, characterized in that it further comprises a vacuum chamber annealing installed over the camera with the crucible and the shaper coaxially with it, and the synchronization system of the mass of the grown crystal and the flow of feed material Luggage annealing has a heater, the height of which is equal to or exceeds the maximum length of crystal, the diameter of the camera annealing is 0.6 to 0.9 from the diameter of the bottom of the camera, the cameras are installed partition with holes for rod with structuralism grown crystal and feed on the upper edge of the crucible is set plate with slots, with plenty of slots parallel to each other and two walls shaper, have a width of 50-100 μm and spaced from each other 70-120 μm within the space bounded by two perpendicular slits with a width of 1-1,5 mm, and the ends of the slots made deaf.

2. Device for growing shaped single crystals of sapphire according to claim 1, characterized in that the synchronization system contains sensors differential weighing the mass of the crystal and the flow of feed material.

3. Device for growing shaped single crystals of sapphire according to claim 1, characterized in that the rod is further provided with a mechanism for axial rotation.

4. The device is rasiwasia shaped sapphire crystal according to claim 1, characterized in that the partition between the chambers is made of tungsten or molybdenum sheet.

5. Device for growing shaped single crystals of sapphire according to claim 1, characterized in that the partition between the chambers are made with adjustable holes.

6. Device for growing shaped single crystals of sapphire according to claim 1, characterized in that the plate with slits made of tungsten or molybdenum sheet.

7. Device for growing shaped single crystals of sapphire 1, wherein the camera and the portion of the rod outside the chambers, equipped with a water quench system.



 

Same patents:

FIELD: chemical industry; methods of growing of the rectangular monocrystals of sapphire.

SUBSTANCE: the invention is pertaining to the technology of growing from melts of the monocrystals of sapphire and may be used at production of the volumetric crystals with the crystallographic orientation along the axis <1010> or <1120>. The device contains the vacuum chamber with the installed in it the crucible, the rectangular shaper, the heater assembled out of the lamellas fixed on the current leads, the screens, the rod with the seed-crystal holder and the systems adjusting the hoisting speed of the seed crystal and power of the heater. The crucible, the generatrix of the lamellas and the deflector have the rectangular form, between the bottom of the crucible and the shaper there is the spacing, the altitude of the walls of the shaper exceeds the altitude of the crucible. The wall of the shaper in their upper part are made slit along the ribs and bent off along the slits in the direction of the walls of the chamber, the shaper rests on the upper edge of walls of the crucible by its slit parts. The technical result of the invention consists in the rise of the output of the single crystals up to 60 % due to reaching of integrity of the geometrical shape of the crystal with the crystallographic orientation along the axis <1010> or <1120> and acceleration of the growing process.

EFFECT: the invention ensures the increased output of the suitable single crystals up to 60 % due to reaching the integrity of the geometrical shape of the crystal with the crystallographic orientation along the axis <1010> or <1120> and acceleration of the growing process.

5 cl, 2 dwg

FIELD: growing monocrystals of refractory oxides from melts by oriented crystallization; production of sapphire monocrystals corresponding to opto-electronics requirements.

SUBSTANCE: proposed device has vacuum chamber with crucible and molding unit, tungsten heater, shields, rod with seed holder which is provided with crystal raising mechanism mounted outside the chamber, melt make-up system made in form of bin with tube and unit for control of heating and rate of raising the crystal. Device is additionally provided with annealing vacuum chamber mounted above chamber with crucible and molding unit coaxially relative to it and system for synchronization of mass of crystal being grown and consumption of make-up material; annealing vacuum chamber is provided with self-contained heater whose height is equal to or exceeds maximum size of length of crystal obtained; diameter of annealing chamber ranges from 0.6 to 0.9 of diameter of lower chamber; mounted in between chambers is partition with holes for rod with seed holder, crystal being grown and make-up; molding unit is made in form of parallelepiped with parallel through vertical slots which is mounted in crucible at clearance and is secured on crucible walls; height of parallelepiped is equal to 20-30% of crucible height; width of slots is 0.2-0.3 mm at distance between them of 0.2-0.5 mm; in horizontal plane ends of slots are blind. Proposed device makes it possible to eliminate voids lesser than 50 mcm in diameter at obtaining the crystals whose transversal size is lesser than 100 mm at crystallographic orientation of <1010> or <1120>. Power requirements are reduced by 4-6 times. Monocrystals grown with the aid of this device have low internal stresses which is important for further mechanical treatment of crystals.

EFFECT: reduced power requirements; low internal stresses of crystals.

7 cl, 2 dwg

FIELD: medical engineering.

SUBSTANCE: method involves machining a billet giving it shape and sharpening the cutting part. Ruby monocrystal boules are used as raw material of the billet, grown up in crystallographic direction of [1011]. They are split into half-boules in [1120] direction, and then cutting into plates. Cutting is carried out in direction set in perpendicular to half-boule crystallographic axes. Before sharpening tool cutting part shaped as cutter, hydrothermal ruby monocrystal plates etching is carried out, to determine tool cutter cut-off directions in crystallographic directions of [1210], [1011] and [0111].

EFFECT: high precision cutting tool possessing increased strength and usable in eye microsurgery.

3 dwg

FIELD: jewelry technology; manufacture of jewelry colored inserts.

SUBSTANCE: synthetic corundum contains alumina, color-forming additives and binder-paraffin. Required color is obtained as follows: for obtaining black color molybdenum oxide is added to alumina in the amount of 0.03%; for obtaining gray color, tungsten oxide is added to alumina in the amount of 0.01%; for obtaining blue color, neodymium oxide is added in the amount of 0.01%; for obtaining pink color, erbium oxide is added to alumina in the amount of 0.01%; for obtaining red color, chromium oxide is added in the amount of 0.05%. Proposed method of manufacture of jewelry articles includes molding in casting machines at a pressure of 4 atm and roasting; first roasting cycle is performed in continuous furnaces for burning-out the binder and is continued for 90 h at temperature of 1150 C; second roasting cycle is performed in batch furnaces at temperature of 1750 C and is continued for 170 h for forming and sintering of microcrystals making translucent crock at density of 4 g/cu cm and hardness of 9 according to Mohs hardness scale; then polishing is performed with the aid of diamond materials. Articles thus made have high-quality miniature texture at hardness which is disadvantage in relation to diamond only.

EFFECT: high quality of articles; enhanced hardness of articles.

7 cl

The invention relates to the field of growing single crystals from the melt and can be used to create a device for growing single crystals of sapphire

The invention relates to the cultivation of the melt bulk single crystals of sapphire and are aimed at increasing the service life of structural elements

The invention relates to the cultivation of molten sapphire crystal and is aimed at improving the thermal protection system

The invention relates to the cultivation of molten sapphire crystal by the method of crystallization from the melt

The invention relates to the cultivation of artificial crystals (ZnO, SiO2Caso3, Al2ABOUT3)
The invention relates to the cultivation of refractory crystals of sapphire, ruby, garnet, etc

FIELD: chemical industry; methods of growing of the rectangular monocrystals of sapphire.

SUBSTANCE: the invention is pertaining to the technology of growing from melts of the monocrystals of sapphire and may be used at production of the volumetric crystals with the crystallographic orientation along the axis <1010> or <1120>. The device contains the vacuum chamber with the installed in it the crucible, the rectangular shaper, the heater assembled out of the lamellas fixed on the current leads, the screens, the rod with the seed-crystal holder and the systems adjusting the hoisting speed of the seed crystal and power of the heater. The crucible, the generatrix of the lamellas and the deflector have the rectangular form, between the bottom of the crucible and the shaper there is the spacing, the altitude of the walls of the shaper exceeds the altitude of the crucible. The wall of the shaper in their upper part are made slit along the ribs and bent off along the slits in the direction of the walls of the chamber, the shaper rests on the upper edge of walls of the crucible by its slit parts. The technical result of the invention consists in the rise of the output of the single crystals up to 60 % due to reaching of integrity of the geometrical shape of the crystal with the crystallographic orientation along the axis <1010> or <1120> and acceleration of the growing process.

EFFECT: the invention ensures the increased output of the suitable single crystals up to 60 % due to reaching the integrity of the geometrical shape of the crystal with the crystallographic orientation along the axis <1010> or <1120> and acceleration of the growing process.

5 cl, 2 dwg

FIELD: growing germanium monocrystals.

SUBSTANCE: germanium monocrystals are grown from melt on seed crystal with the use of molder filled with melt; molder has holes for removal of excessive melt formed during crystallization. First, crystal is enlarged on rotating seed crystal in radial direction till it gets in contact with molder placed in crucible without melt; then, rotation of crystal is discontinued and crystallization is carried out in axial direction by lowering the temperature till complete hardening of melt; molder is provided with holes in its lower part located at equal distance from one another at radius r satisfying the condition r<K/h, where K= 0.2 cm2; h is height of melt, cm; number of holes, 12-18. Molder may be made in form of round, square or rectangular ferrule. Proposed method makes it possible to obtain germanium crystals of universal shape with no defects in structure, free from mechanical stresses and homogeneous in distribution of admixtures.

EFFECT: increased productivity; reduced technological expenses; increased yield of product.

2 cl, 2 dwg, 2 ex

FIELD: growing monocrystals of refractory oxides from melts by oriented crystallization; production of sapphire monocrystals corresponding to opto-electronics requirements.

SUBSTANCE: proposed device has vacuum chamber with crucible and molding unit, tungsten heater, shields, rod with seed holder which is provided with crystal raising mechanism mounted outside the chamber, melt make-up system made in form of bin with tube and unit for control of heating and rate of raising the crystal. Device is additionally provided with annealing vacuum chamber mounted above chamber with crucible and molding unit coaxially relative to it and system for synchronization of mass of crystal being grown and consumption of make-up material; annealing vacuum chamber is provided with self-contained heater whose height is equal to or exceeds maximum size of length of crystal obtained; diameter of annealing chamber ranges from 0.6 to 0.9 of diameter of lower chamber; mounted in between chambers is partition with holes for rod with seed holder, crystal being grown and make-up; molding unit is made in form of parallelepiped with parallel through vertical slots which is mounted in crucible at clearance and is secured on crucible walls; height of parallelepiped is equal to 20-30% of crucible height; width of slots is 0.2-0.3 mm at distance between them of 0.2-0.5 mm; in horizontal plane ends of slots are blind. Proposed device makes it possible to eliminate voids lesser than 50 mcm in diameter at obtaining the crystals whose transversal size is lesser than 100 mm at crystallographic orientation of <1010> or <1120>. Power requirements are reduced by 4-6 times. Monocrystals grown with the aid of this device have low internal stresses which is important for further mechanical treatment of crystals.

EFFECT: reduced power requirements; low internal stresses of crystals.

7 cl, 2 dwg

FIELD: production of shaped crystals of refractory compounds such as leucosapphire, ruby, aluminum-yttrium garnet and other by growing from melt according to Stepanoff method.

SUBSTANCE: method comprises steps of evacuating melting chamber and warming heat zone; adding to melting chamber at least one inert gas; providing temperature of heat zone till melting temperature of initial raw material in crucible while filing capillary system of shaper with melt; flashing seed crystal and growing it on end of shaper; drawing crystal; tearing off crystal and cooling it. During those steps applying to melting chamber mixture of inert gases containing, mainly argon and at least helium; setting in melting chamber pressure of mixture that is less than atmospheric pressure and after growing crystal up to its complete section melting off grown part of crystal just till seed and again realizing growing procedure. Then crystal is finally grown. After cooling ready crystal the last may subjected to annealing outside melting chamber for two stages, at first in reducing carbon-containing gas medium including inert gases and then in vacuum.

EFFECT: possibility for producing high optical quality crystals with improved uniformity of optical properties, less loss of yield, lowered cost price of produced crystals.

8 cl, 2 tbl

FIELD: electronic industry; production of profiled crystals from semiconductor materials and other materials used in electronic industry.

SUBSTANCE: proposed method consists in growing profiled crystals from melt by drawing the seed holder and imparting rotation to seed holder and to molding agent with capillary zone for delivery of melt located between inner and outer curvilinear edges of working surface in form of spiral; the following relationship is satisfied: dR/dα≥0, where R and α are radius and angle of polar coordinate system with center at point of intersection of plane in which edges of working surface of molding agent and axes of its rotation lie. Molding agent may be so made that its working surface is located at angle relative to plane of its base. Molding agent may be made at gradual increase of molding surface above base. Proposed method may be used for growing crystals from rubin, sapphire, alumoyttrium garnet, composite eutectics refractory oxides, lithium niobate, molybdates of rare-earth metals and other substances of various forms, hollow parts inclusive in form of cone, sphere, rod (cylinder), ellipsoid at section in form of trochoid or any open curve at homogeneous structure.

EFFECT: possibility of obtaining constant thickness of crystal or thickness changing according to definite law.

5 cl, 10 dwg

FIELD: devices for growing from a melt of polycrystalline layers of silicon used for production of solar sells.

SUBSTANCE: the invention is pertaining to the field of growing from a melt of polycrystalline layers of silicon and may find application in production of solar cells (photoconverters). The substance of the invention: the device includes a crucible for a melt, a heater, a substrate linked with the gear of its relocation and a capillary feeding mechanism. The substrate is made out of a carbon reticular fabric, the heater consists of two sections of heating: a square section, inside which the crucible is mounted, and a right-angled section located above the substrate. At that the cross-section of the heater components is selected so, that the section of heating of the crucible is overheated in respect to the section of heating of the substrate. For a capillary feeding of the melt of silicon from the crucible use harnesses made out of a carbon filament spooled on a tail-end of the feeding mechanism. For replenishment of the level of the melt in the crucible use a vibrofeeder to feed the crushed silicon. The technical result of the invention is an increased productivity of the device and formation of conditions for production of the orientated coarse-crystalline structure of a silicon layer on the substrate naturally open for making of the rear electrical contact.

EFFECT: the invention ensures an increased productivity of the device, production of the orientated coarse-crystalline structures of the silicon layers on the substrates.

1 dwg 1 o

FIELD: devices for continuous grouped growing of the orientated layers of silicon on a carbonic fabric.

SUBSTANCE: the invention is pertaining to the field of growing of polycrystallic layers from a melt of silicon and may be used in production of solar cells (photo-converters) Substance of the invention: the device consist of a crucible for a melt mounted inside a heater, a substrates connected to gears of their relocation and a capillary feeding mechanism. The substrates are made out of a carbonic reticulated fabric, and the capillary feeding mechanism consists of two horizontal sections, located to the left and to the right of the crucible, each of which has a tail swathed by harnesses out of a carbonic thread. The crucible is made with the bottom hollow elongated spout supplied with an independent heater, under the crucible there is a tank for a drain of the crucible residue, the inner surface of which is coated by a layer of a hexagonal boron nitride, and above the crucible a vibrating feeder for feeding the ground silicon is mounted.

EFFECT: the invention ensures growing of polycrystallic layers from a melt of silicon.

1 dwg

The invention relates to scintillation materials and can be used in nuclear physics, medicine and oil industry for recording and measuring x-ray, gamma and alpha radiation; non-destructive testing of the structure of solids; three-dimensional positron-electron and x-ray computed tomography and x-ray

The invention relates to the production of single crystals, to a device for growing single crystals from the melt, and can be used to obtain calibrated profiled bulk single crystals, in particular sapphire

The invention relates to the technology of growing single crystals from a viscous melt refractory oxides by Czochralski method for producing three-dimensional shaped single crystals with a high degree of perfection patterns

FIELD: devices for continuous grouped growing of the orientated layers of silicon on a carbonic fabric.

SUBSTANCE: the invention is pertaining to the field of growing of polycrystallic layers from a melt of silicon and may be used in production of solar cells (photo-converters) Substance of the invention: the device consist of a crucible for a melt mounted inside a heater, a substrates connected to gears of their relocation and a capillary feeding mechanism. The substrates are made out of a carbonic reticulated fabric, and the capillary feeding mechanism consists of two horizontal sections, located to the left and to the right of the crucible, each of which has a tail swathed by harnesses out of a carbonic thread. The crucible is made with the bottom hollow elongated spout supplied with an independent heater, under the crucible there is a tank for a drain of the crucible residue, the inner surface of which is coated by a layer of a hexagonal boron nitride, and above the crucible a vibrating feeder for feeding the ground silicon is mounted.

EFFECT: the invention ensures growing of polycrystallic layers from a melt of silicon.

1 dwg

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