Method for measuring cleanness of substrate surfaces

FIELD: micro-electronics, possible use during production of integration micro-chips on active and passive substrates and in diffraction optics during products of diffraction optics elements.

SUBSTANCE: during realization of method, shift of probe-substrate is performed along the surface of the substrate being examined, which are positioned in substrate holders at an angle to each other. Shift of probe-substrate is performed by means of lifting of free end of substrate holder with the substrate being studied held in it for an angle relatively to horizontal plane, at which working points of probe-substrate moves from its position. Value of the angle is used as interaction parameter, on basis of which cleanness of substrate surface is evaluated.

EFFECT: increased productivity, increased precision.

2 dwg

 

The invention relates to the field of measurement technology and can be used in microelectronics in the manufacture of integrated circuits on the active and passive substrates and diffractive optics in the production of diffractive optical elements.

The known method (USSR Author's certificate No. 1260752, CL G01N 13/02, 1982) to determine the purity of the surface of the substrate on the value of the wetting angle by measuring the volume of a drop placed on a flat substrate.

However, this method of determining surface cleanliness is very time consuming, because you first need to measure the geometrical parameters of the drops and then determines the target value of the angle that determines the purity of the surface of the substrate.

The known method (USSR Author's certificate Avilov, Aigyptos. The method for determining the cleanliness of a surface of the substrate. No. 17848668, CL G01N 13/02, 1992) to determine the purity of the surface of the substrate on the rate of spreading of a liquid drop on the surface of the flat substrate.

However, this method of determining surface cleanliness leads to irreversible changes in properties of the fluids, to eliminate them, you must use fluid purity. This requirement greatly complicates and increases the cost measurement process.

The closest in technical essence to the por is dliemma is the way (USSR Author's certificate Avilov, Aigyptos. The method for determining the cleanliness of a surface of the substrate. No. 1821688, CL G01N 13/02, 1993) to determine the purity of the surface of the substrate on the value of the slip speed of the substrate-probe (counterface) on the surface of the investigated substrates, namely, that produce a shift in the substrate of the probe on the surface of the investigated substrates, which are located in podarkticules at an angle to each other, define the parameter of their interaction, which is judged on the cleanliness of the substrate surface.

The disadvantages of this method are the need for strict control of the magnitude of the angle of inclination of the substrate, through which the sliding of the movable substrate-probe (counterface). High sensitivity to the change in the value of this angle leads to a significant breach of the accuracy of the measurement process, to correct the measurement process include an additional control device for the deviation angle of the slide from the setpoint. This requirement greatly reduces the performance of the method, adds cost and complexity to the measurement process.

The basis of the invention is the task of increasing productivity and accuracy.

This task is solved by a method for measurement of surface roughness of the substrate, namely, that produce a shift of the substrate and the probe surface is ti the investigated substrate, located in podarkticules at an angle to each other, define the parameter of their interaction, which is judged on the cleanliness of the substrate surface, according to the invention, the shift of the substrate probe is carried out by lifting the free end of podarkticules with fixed therein investigated the substrate at an angle relative to the horizontal plane in which the working point of the substrate probe budge, and the value of this angle is used as the interaction parameter.

The figure 1 shows the location of the forces arising from the interaction of substrates: α - angle, which investigated the substrate makes with the horizon; β - the angle between the substrates.

The figure 2 shows the method for determining the cleanliness of a surface of the substrate, namely, that as the controlled parameter using the value of the angle of inclination of the surface of the investigated substrate relative to the horizontal plane, shows a structural diagram of podarkticules relatively flat horizontal surface of the device.

Figure 2 shows polictial 1, which is rigidly attached investigated the substrate 2, the substrate-probe 3 with a surface identical to the surface of the substrate 2, is also rigidly attached to polictial 4. The lever 5 with one end attached to polictial 4, and the fur is the mechanism, ensure the establishment of a working point 6 in the initial state on the surface of the substrate and providing the sliding under the force of gravity operating point 6 of the substrate electrode in a predetermined path on the surface of the substrate 2, provided that the force of gravity is determined by the angle of the surface of the investigated substrate relative to the horizontal plane, will exceed the force of friction of rest.

Let the substrate-probe moves along the substrate with accelerationthen in the interaction region of the substrate, there are three forces:the force of gravity,- reaction force supports and- sliding friction force. The energy balance of these forces first motion of the substrate-probe can be described by the equality of the form:

We define the projection of all forces acting on the substrate-probe, on the y-axis directed along the substrate:

From figure 1 it is seen that the vector N perpendicular to the substrate, so the angle γ between the substrate-probe and vectorwill be equal to γ=180-90-β=90-β. The angle between the axis γ and the horizon is equal to α+βtherefore, ϕ=180-90-α-β=90-(α+β). Vector rawstatus the th forces parallel to the substrate, therefore, the angle between the surface of the substrate probe (indenter) and the resultant is equal to the angle between the substrates, as lying crosswise. Inserting the expressions for angles γ and ϕ in the formula (2), we obtain:

Substituting in the formula (3), the expression for FTP=Nμget

where μ - the coefficient of sliding friction.

When projecting the forces acting on the surface of the substrate probe (indenter), y' (see figure 1) shows that the vector of the friction force and the resultant perpendicular to the axis y', then we can write:

N-mgcosα=0,

We substitute the formula (5) for the projection of N in the formula (4), we obtain:

Reducing both sides of the formula (6) on m, we get

From the formula (7) find the value for μ

Thus, between angle α and the coefficient of sliding friction there really is a hard dependency.

The conversion coefficient of friction is carried out according to the formulas given in (Poltavtsev YG, Knyazev A.S. Technology surface treatment in microelectronics. - Kiev: Technika, 1990, 192-194 C.), when the uneven distribution of pollution

with a uniform distribution C is pollution

where m and empirical constants; μmax- coefficient of friction for technologically clean the surface of the substrate; μnthe friction coefficient of saturation to the surface of the substrate, increasing the degree of contamination, which does not change the values of the coefficient of friction.

The method is as follows.

The free end of podarkticules 1 using a flexible connection rises relative to the lid 7 at some angle of inclination of the surface of the investigated substrate relative to the horizontal plane αat which the working point 6 of the substrate electrode 3 will budge and begin to slide on the investigated surface of the substrate 2. Directly in the break-out torque operating point 6 potential energy of the substrate-probe is balanced by the energy forces of the bonds of the atoms of the interacting surfaces, i.e. true equality:

The electrical signal obtained by the measurement scheme in the form of voltages taken with high precision variable resistor corresponding to the angle of the surface of the investigated substrate relative to the horizontal plane αobtained by shifting the operating point 6, fixes the angle of inclination of the surface of the investigated substrate relative to the horizontal plane α that or substituted in the formula 8 and calculate the numerical value of μthen find the surface cleanliness of the formula 9, or 10, or gauge reading α by measuring the surface finish on the respective substrates with a known concentration of foreign atoms. However, the last option for use in a production environment less suitable due to the high cost of forming a grooved surfaces, so in real cases, using equations 9, 10.

A method of measuring the purity of the surface of the substrate, namely, that produce a shift in the substrate of the probe on the surface of the investigated substrates, which are located in podarkticules at an angle to each other, define the parameter of their interaction, which is judged on the cleanliness of the substrate surface, characterized in that the shift of the substrate probe is carried out by lifting the free end of podarkticules with fixed therein investigated the substrate at an angle relative to the horizontal plane in which the working point of the substrate probe budge, and the value of this angle is used as the interaction parameter.



 

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