Semiconductor ferromagnetic hetero-structure

FIELD: non-organic chemistry, namely triple compound of manganese-alloyed arsenide of silicon and zinc arranged on monocrystalline silicon substrate, possibly in spintronics devices for injection of electrons with predetermined spin state.

SUBSTANCE: electronic spin is used in spintronics devices as active member for storing and transmitting information, for forming integrated and functional micro-circuits, designing new magneto-optical instruments. Ferromagnetic semiconductor hetero-structure containing zinc, silicon, arsenic and manganese and being triple compound of zinc and silicon arsenide alloyed with manganese in quantity 1 - 6 mass % is synthesized on substrate of monocrystalline silicon and has formula ZnSiAs2 : Mn/Si. Such hetero-structure is produced by deposition of film of manganese and diarsenide of zinc onto silicon substrate and further heat treatment of it.

EFFECT: possibility for producing perspective product for wide usage due to combining semiconductor and ferromagnetic properties of hetero-structure with Curie temperature significantly exceeding 20°C and due to its compatibility with silicon technique.

3 ex, 2 dwg

 

The invention relates to the field of inorganic chemistry, specifically to alloyed manganese ternary arsenides silicon and zinc, located on the monocrystalline silicon substrate, which can find application in spintronic devices for injection of electrons with a certain spin state. In spintronic devices electronic spin is used as the active element for the storage and transmission of information, the development of an integrated and functional circuits, design of new magnetoelectronic devices.

The above ternary arsenides silicon and zinc belong to the class of arsenides elements of the second and fourth group of the Periodic system.

Currently, the most promising materials for spintronics are connections based on semiconductors And3B5,doped Mn, Co, Fe [M.L.Reed, M.K.Ritums, H.H.Stadelmaier, M.J.Reed, C.A.Parker, S.M.Bedair, and N.A.El-Masry, Mater. Lett, 2001, 51, 500; M.L.Reed, N.A.El-Masry, H.Stadelmaier, M.E.Ritums, N.J.Reed, C.A.Parker, J.C.Roberts, and S.M.Bedair, Appl. Phis. Lett, 2001, 79, 3473; N.Theodoropoulou, A.F.Hebard, M.E.Overberg, C.R.Adernathy, S.J.Pearton, S.N.G.Chu, and R.G.Wilson, Phys. Rev. Lett., 2002, 89, 107203; Hideo Ohno. Properties of ferromagnetic III-Y semiconductors. Journal of magnetism and magnetic materials. 1999. V.209. P.110-129]. The best results in this group of compounds were obtained on samples of (Ga, Mn) N with temperature of the magnetic ordering (Curie temperature TC), equal K [G.T.Thaler, M.E.Overberg, BGila, R.Frazier, C.R.Abemathy, SJ.Pearton, J.S.Lee, S.Y.Lee, Y.D.Park, Z.G.Khim, J.Kim, and f.ren, appl. Phys. Lett, 2002, 80, 3964]. The disadvantages of these materials include structural imperfections, a large number of defects, is not sufficiently high Curie temperature and a significant difference in the crystal structures between semiconductors And3B5and silicon, making it difficult to obtain epitaxial structures and makes them incompatible with silicon technology. It should be noted that the vast majority of the elemental base of solid state electronics devices made on silicon-based.

Compounds that are compatible with silicon technology, are the mono-silicides of the transition metals Fe1-xMnxSi and Fe1-yCOySi, where x<0.8 a; y<0,3 [N.Manyala, Y.Sidis, J.F.DiTusa, G.Aeppli, D.P.Young, and Z.Y.Fisk, Nature Materials, 2004, 3, 255]. In these compounds, the highest Curie temperature Tc=K achieved in connection Fe1-yCOySi, which has an electronic conductivity, as for y<0.3 of a ferromagnet. The disadvantage of this material is low Curie temperature, which does not allow to create spintronic devices operating at room temperatures, i.e. at temperatures above 20°C.

Closest to the invention for magnetic and semiconductor properties is a ferromagnetic semiconductor Cd1-xMnxGeP2doped PE shodnymi d-elements, with high Curie temperature, belonging to the family of ternary semiconductors with the General formula And2B4With52[New magnetic semiconductor Cd1-xMnxGeP2. Gaedeke, Teshibari, Tnsi, Csato. FTP, 2001, t.35, B.3, p.á305-309]. The disadvantage of these compounds is poor compatibility with silicon technology.

The present invention aims at finding a ferromagnetic semiconductor product with a Curie temperature substantially above room temperature, which can be implemented in an industrial common silicon technology.

The technical result is achieved by the fact that a ferromagnetic semiconductor heterostructure, including zinc, silicon, arsenic and manganese, which is a triple compound of gallium zinc and silicon, doped with manganese in the amount of 1-6 wt.%, the specified connection is synthesized on a substrate of monocrystalline silicon and corresponds to the formula ZnSiAs2:Mn/Si, while the heterostructure is obtained by deposition of a film of manganese and diarsenide zinc on the silicon substrate with subsequent thermal processing.

The specified range of concentration of manganese is determined by the fact that when the content of Mn is less than 1 wt.% the resulting material does not possess ferromagnetic properties required for create the Institute of memory elements, and when the content of Mn is more than 6 wt.% the material is a multiphase and heterogeneous electrophysical properties.

The heterostructure ZnSiAs2:Mn/Si is produced by the interaction of the films of manganese and diarsenide zinc silicon substrate. The film is applied using vacuum thermal evaporation on oriented in the direction (111) single-crystal silicon substrate at a temperature of 30-100°With further heat treatment in the vapor diarsenide zinc at a temperature of 800-1000°C.

The parameters of the obtained material was monitored by scanning electron microscope (composition, film thickness), x-ray analysis (composition). Electrical conductivity of the samples was estimated by the method of van der Pauw, magnetic measurements in the temperature range from liquid helium to 600K was carried out using a SQUID-magnetometer.

Figure 1 shows the curve of the temperature dependence of the magnetization of ternary arsenide, silicon and zinc doped Mn. Figure 2 - characteristic conductivity ZnSiAs2:Mn depending on the temperature.

Below are examples of proposed compositions claimed heterostructures.

Example 1. Manganese sprayed on the silicon substrate to a film thickness 0,145 μm, and diarsenic zinc to the film thickness of 3.46 μm and annealed. The content of manganese arsenide, silicon and zinc status is made to 5.5 wt.%. The resulting sample has a Curie temperature TC=K (Figure 1, curve 1).

Example 2. Manganese sprayed on the silicon substrate to a film thickness 0,145 μm, and diarsenic zinc to the film thickness of 12.76 μm and annealed. The content of manganese arsenide, silicon and zinc is 1% wt.%. The resulting sample has a Curie temperature TC=K (Figure 1, curve 2).

Example 3. Manganese sprayed on the silicon substrate to a film thickness 0,125 μm, and diarsenic zinc to the film thickness of 1.85 μm and annealed. The content of manganese arsenide, silicon and zinc is 6.0 wt.%. The resulting sample has a Curie temperature TC=K (Figure 1, curve 3).

As can be seen from Figure 1, the claimed product is a ferromagnet with a Curie temperature substantially above room temperature TC=490÷K, and curve 2 indicates the semiconducting nature of the conductivity.

A unique combination of semiconducting and ferromagnetic properties declared heterostructures and compatibility with silicon technology make it a promising product for wide practical use.

Ferromagnetic semiconductor heterostructure, including zinc, silicon, arsenic and manganese, which is a triple compound of gallium zinc and silicon, doped with manganese in the amount of 1-6 wt.%, the specified connection is synthesized on the substrate m is nonrestoring silicon and corresponds to the formula ZnSiAs 2:Mn/Si, with heterostructure obtained by deposition of a film of manganese and diarsenide zinc on the silicon substrate with subsequent thermal processing.



 

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