Semiconductor structure

FIELD: power semiconductor microelectronics.

SUBSTANCE: newly introduced in central part of semiconductor structure that has substrate, semiconductor material with depleted area in its central part enclosed by depleted area in peripheral part of structure, and relevant current-conducting contacts are recessed components of reverse polarity of conductivity with spherical depleted area whose electric field strength is higher than that of depleted areas in gap between recessed components and in peripheral part of structure.

EFFECT: improved power characteristics, enhanced resistance to pulse overcurrents.

7 cl, 1 dwg

 

The invention relates to the field of power semiconductor microelectronics with improved electrical parameters and increased resistance to pulsed over-currents.

Known semiconductor structure analogue containing a substrate of semiconductor material with depleted region (space charge) in the Central part of the structure covered by the depleted region in the peripheral part of the structure, the conductive contacts to the structure in which the peripheral part is made of insulating dielectric adjacent depleted region predominantly cylindrical shape with high electric field strength and, accordingly, with a breakdown voltage lower than the breakdown voltage of the depletion region of a flat transition in the Central part of the structure.

Similar SSI. Physics of semiconductor devices, vol. 1, M.: Mir, 1984, English translation edited by Rasures, str-317, 38, P.Z.

Disadvantages: current avalanche breakdown occurs in the depletion region of the peripheral part of the structure, thus deteriorating the electrical parameters and the stability of the structure to pulsed over-currents.

Also known semiconductor structure of the prototype, each of which includes a substrate of semiconductor material of the first conductivity type with depleted about what actu (space charge) in the Central part of the structure, the formed conductive contact, for example, metal - semiconductor, covered depleted region in the peripheral part of the structure made, for example, by a protective ring of the second conductivity type and a field plate located above the dielectric layer, the conductive contacts to the structure connected with a peripheral part of it.

Prototype - SSI. Physics of semiconductor devices, vol. 1, M.: Mir, 1984, English translation edited by Rasures, str-317, 38, Pb, ,

Under the applied reverse voltage, the depletion region extends in the Central part of the semiconductor structure from the surface of the semiconductor material in contact with the conductive layer in the peripheral part of the structure, under a protective ring from his steel border, under the field plate from the surface of the semiconductor material under the action of reduced voltage due to his fall on the dielectric layer with a small thickness which breakdown due to high electric field intensity is localized at the edge of the field plates, and when the thickness at the edge of the security ring, which calls for increasing the depth of the ring and, accordingly, the thickness located underneath the semiconductor material leading to the increase of the direct voltage drop is Oia on the structure. At a small thickness of material breakdown is localized under a protective ring, resulting in higher density of the avalanche current breakdown guard ring requires its area increases up to 20-30% of the area of the entire structure, thereby reducing the Central working part of it.

Disadvantages: when the forward and reverse bias current is concentrated in a limited area of the peripheral part of the structure, which leads to local overheating. While the Central part of the structure is not shielded peripheral ring has a significant electric field and leakage current under reverse bias and the tendency to pinching of current due to the increase in its value with increasing temperature patterns. Moreover, peak forward bias current is increased, the area of the guard ring injects charges of the second type in the local region of semiconductor material of the first conductivity type, which increases the resorption of minority carriers and reduces performance.

The technical result of the invention: improvement of electrical parameters with higher resistance to pulsed over-currents is achieved in that in a semiconductor structure containing a substrate, a semiconductor material with depleted region (space charge) in the Central part of the structure, the conductive con who acts to the structure, in the Central part of the structure introduced in-depth elements of opposite type conductivity with depleted areas of the spherical shape with high electric field strength relative to the strength of the electric field depleted areas between the in-depth elements and in the peripheral part of the structure, the depletion region between the recessed elements formed conductive contact with the semiconductor material, the peripheral part of the structure is made with an equivalent radius of curvature of the depletion region has a cylindrical shape greater than the radii of curvature of depleted areas of the spherical shape of the in-depth elements in the Central part of the structure, the peripheral part of the structure is made with an equivalent radius of curvature of the depletion region more than the radius of curvature of the depletion region of the cylindrical transition with depth not less than twice the thickness of the depleted layer planar transition in the breakdown, the thickness of the semiconductor material under the entered depth elements in the Central part of the structure ranges from 0.6 to 0.9 thickness of the depleted layer planar transition in the breakdown, the area entered in the Central part of the structure depth is from 0.05 to 0.2 square Central portion, the distance between glubinnymi elements in the Central part of the structure is not less than 0.7 thickness of the depleted layer planar transition in the breakdown.

In the drawing, the semiconductor structure shown:

1 - low-resistance substrate;

2 is a semiconductor material of the first conductivity type;

3 - transition from depleted in a semiconductor material region in the Central part of the structure;

4 - the guard ring of the second conductivity type with depleted in the semiconductor material of the first conductivity type region in the peripheral part of the structure;

5 - separating rings of the second conductivity type with depleted in the semiconductor material of the first conductivity type region in the peripheral part of the structure;

6 - in-depth elements of the second conductivity type in the semiconductor material of the first conductivity type in the Central part of the structure;

7, the p - n junction with a depletion region of the spherical shape of the in-depth element of the second conductivity type in the semiconductor material of the first conductivity type in the Central part of the structure;

8 is the radius of curvature of the depletion region of the spherical shape of the p-n junctions in-depth elements in the Central part of the structure;

9 - conductive contacts to the Central and peripheral parts of the structure;

10 - depth in-depth elements with p-n junctions in the Central part of the structure;

11 is an equivalent radius of curvature of the depletion in the semiconductor material region Qili the shape of the shape transitions in the peripheral part of the structure;

12 - the depth of the cylindrical passage, at least twice the thickness of the depleted layer planar transition in the breakdown;

13 is the radius of curvature of the depletion in the semiconductor material region of the cylindrical passage with a depth not less than twice the thickness of the depleted layer planar transition in the breakdown;

14 - small thickness of the semiconductor material under the entered depth elements in the Central part of the structure;

15, the distance between the recessed elements in the Central part of the structure.

Under the applied reverse voltage to the semiconductor structure, the depletion region extends into the semiconductor material 2: in the Central part of the structure of the transition section 3 of semiconductor material with a conductive, e.g. metal contact 9 and the p-n junctions 7 introduced advanced elements 6, in the peripheral part of the structure from its constituent sections 4, 5.

Perform in-depth elements 6 of the opposite type conductivity semiconductor material in the Central part of the structure, forming a p-n transitions 7-depleted areas of the spherical shape in relation to the depletion region of a flat shape between the elements 6 and the depletion region in a generally cylindrical shape in the peripheral part of the article is ucture, leads to the fact that the field strength in the depletion region under the entered depth elements 6 with passages 7, performs a reverse bias function "surge arresters - lightning-rod", higher field strengths the depletion region with the transition between 3-depth elements 6 and the depletion region in the peripheral part of the structure.

As a result, when increasing the reverse breakdown voltage of the depletion region occurs in the Central part of the structure under the entered depth elements 6 with a uniform current distribution in its area due to the positive temperature dependence of the voltage, eliminating pinching of current when the inductive load and preventing the breakdown of a protected around the in-depth elements 6 are depleted in the transition region 3, resulting in the reduction of the reverse leakage currents of the structure.

Under forward bias, in-depth elements 6 perform the functions of the local injectors, reducing forward voltage drop on the structure at an increased direct current due to its spreading over the entire area of the structure without significantly increasing the time resorption of minority carriers when switching, resulting in improved electrical parameters and increases the stability of the structure to pulsed over-currents.

Running between increased the military conductive elements 6, for example, a metal contact 9 with the semiconductor material 2 forming due to the contact potential difference switching diode Schottky depletion region of a flat shape, leads to the fact that since the electric field in the depletion regions of the spherical form of in-depth elements 6 above electric field of the depletion region of a flat shape and less curved than spherical, the depletion region of the peripheral part of the structure, the breakdown of the depletion region occurs at a depth elements 6, performs a reverse bias function "surge arresters-lightning-rod" with a positive temperature dependence of the voltage, with a uniform distribution of the current breakdown by area of the Central part structure, excluding its pinching when working with inductive load and preventing the breakdown of a protected around the in-depth elements 6 with a positive temperature dependence of the current transition 6 with a Schottky diode, which results in reduction of the reverse leakage currents of the structure.

The execution of the peripheral part structure with an equivalent radius 11 of curvature of the depletion region has a cylindrical shape greater than the radii of 8 curvature depleted areas of the spherical shape of the p-n junctions 7 advanced elements 6 in the Central part of the structure, provide the supports reduced electric field strength, and accordingly, an increased breakdown voltage of the depletion region of the peripheral parts of the structure in relation to the strength of the electric field and the breakdown voltage of the depletion regions under-depth elements 6.

But there are no ensures maximum efficiency of the semiconductor structure in the improvement of electrical parameters with high resistance to pulsed over-currents.

Implementation of sections of the peripheral parts of the structure, for example, with security ring 4 (the opposite type of conductivity from the conductivity of a semiconductor material) reduces the electric field strength and, accordingly, increases the breakdown voltage of the structure compared to the structure without the ring, thus improving the electrical parameters and the stability of the structure to pulsed over-currents.

However, increasing the depth of the guard ring 4, respectively, leads to the desired increase of the radius of curvature of the depletion region with an increased breakdown voltage, which requires an increase in under it located and under-depth elements 6 in the Central part of the structure, the thickness of the semiconductor material 2, thereby increasing forward voltage drop on the structure.

The execution of the peripheral part of the structure, for example, with security 4 and the separating rings (an opposite conductivity type from the conductivity of a semiconductor material) increases the equivalent radius 11 of curvature of their depletion region and reduces the electric field strength and, accordingly, increases the breakdown voltage up to the highest values close to the maximum breakdown voltage of planar transition with a minimum depth of rings 4, 5 and minimum thickness located underneath the semiconductor material 2, further improving the electrical parameters and the stability of the structure to pulsed over-currents.

The implementation of sections 4, 5 peripheral parts of the structure, forming a depletion region with (equivalent) radius 11 more curvature radius 13 of curvature of the depletion region of the cylindrical passage with a depth of 12, for example, not less than twice the thickness of the depleted layer planar transition in the breakdown, reduces the electric field strength and, accordingly, to increase the breakdown voltage of the peripheral part of the structure of more than 0.85 of the maximum value of the breakdown voltage transition of the depletion region, thus improving the electrical parameters and the stability of the structure to pulsed over-currents.

The execution of the thickness 14 of semiconductor material 2 under the entered depth elements 6 in the Central part of the structure factor of 0.6 to 0.9 thickness of the depleted layer planar transition in the breakdown allows you to change the depth of 10 of their occurrence more effectively re wirawati the difference between the voltage breakdown of the Central and peripheral parts of the structure from destruction avalanche current, thus improving the electrical parameters and the stability of the structure to pulsed over-currents.

The performing area is entered in the Central part of the structure-depth elements 6 or total area area of the guard ring 4 peripheral parts of the structure, components from 0.05 to 0.2 square Central part of the structure has a negligible effect on the dynamic parameters and at the same time provides effective protection of semiconductor structures from the pulsed over-currents.

Running the distance 15 between the in-depth elements 6 in the Central part of the structure, for example, not less than 0.7 thickness of the depleted layer planar transition in the breakdown allows you to provide the necessary curvature radius of 8 depleted areas of the spherical shape with high electric field strength and, accordingly, a reduced breakdown voltage in relation to the strength of the electric field and the breakdown voltage of the depletion regions between depth elements 6 and in the peripheral part of the structure, thus improving the electrical parameters and the stability of the structure to pulsed over-currents.

1. A semiconductor structure containing a substrate, a semiconductor material with a depleted region in the Central part of the structure covered by the depleted region is clearly in the peripheral part of the structure, conductive contacts to the structure, characterized in that the Central part of the structure introduced in-depth elements of opposite type conductivity with depleted areas of the spherical shape with high electric field strength relative to the strength of the electric field depleted areas between the in-depth elements and in the peripheral part of the structure.

2. Semiconductor structure according to claim 1, characterized in that the depleted region between the recessed elements formed conductive contact with the semiconductor material,

3. Semiconductor structure according to claim 1, characterized in that the peripheral part of the structure is made with an equivalent radius of curvature of the depletion region has a cylindrical shape greater than the radii of curvature of depleted areas of the spherical shape of the in-depth elements in the Central part of the structure.

4. Semiconductor structure according to claim 3, characterized in that the peripheral part of the structure is made with an equivalent radius of curvature of the depletion region more than the radius of curvature of the cylindrical passage with a depth not less than twice the thickness of the depleted layer planar transition in the breakdown.

5. Semiconductor structure according to claim 1, characterized in that the thickness of the semiconductor material is introduced under an in-depth elements in the Central part of the structure ranges from 0.6 to 0.9 thickness of the depleted layer planar transition in the breakdown.

6. Semiconductor structure according to claim 1, characterized in that the area entered in the Central part of the structure depth is from 0.05 to 0.2 square Central part.

7. Semiconductor structure according to claim 1, characterized in that the distance between the recessed elements of the Central part of the structure is not less than 0.7 thickness of the depleted layer planar transition in the breakdown.



 

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