Method for producing submicron and nanometric structure

FIELD: microelectronics, micro- and nano-technology.

SUBSTANCE: proposed method for producing submicron and nanometric structure includes formation of embossed structures on substrate surface, application of film to reduce embossed structure size to submicron and nanometric dimensions, and etching, anisotropic and selective relative to film material and source embossed layer, in chemically active plasma of structure obtained together with substrate material until embossed structure of submicron and nanometric dimensions, twice as deep as its width, is obtained.

EFFECT: provision for transferring mask pattern to bottom layer of substrate measured in terms of submicron and nanometric values.

2 cl, 3 dwg

 

The invention relates to the field of microelectronics, micro - and nanotechnology, and in particular to methods of forming structures using plasma-chemical deposition methods, etching the deposited material on the surface of the substrate, the mask to create a layout, and can be used in the manufacture of semiconductor devices and integrated circuits.

More specifically, the invention relates to methods of image transfer pattern of the mask to the underlying layer with the reduction of topological dimensions of the structure to nanometer size.

To create structures of submicron dimensions without additional lithography processes known method transfer path of the image (CRP method) (see Plasma technology in the manufacture of VLSI. Edited Nindiya. Moscow. World. 1987. S-445). The method consists in the following. A lithographic method, a relief structure on the surface with the vertical walls of the deposited film made of any material (Al, Si3N4, polysilicon and other). Because of its thickness on the side surface relief structure is higher than on the planar surface, then after the operation anisotropic etching or sputtering of this film with a planar surface, it will remain on the perimeter of the structure, indicating its path. After the next operation is then selective removal of material source of relief patterns on the surface of only the contour of the film of deposited material. This contour film can be used as an element of the device or as a transmission mask for such element (direct and indirect transfer method of the contour image). The size of an element depend on the film thickness on the side wall. Accurate profiles necessary element are determined empirically. This method was used to create a grating with a period less than the period of the original lattice (see D.C.Flanders, N.M.Efremov. Generation of <50 nm period grating using edge-defined techniques. J.Vac. Sci. Technol. 4, 1105 (1983) and for forming the gates of the MOS structures (see Plasma technology in the manufacture of VLSI. Edited Nindiya. Moscow. World. 1987. S).

However, using the indirect method CRPS, when the remaining film is a mask to transfer the image drawing mask in the underlying layer, to obtain a reduced image of the original relief structure is impossible. In the method of the CRP transferred image only the outline of the original structure. For example, if the figure in the original mask is the pits or grooves, using the indirect method CRPS in the underlying layer will be only the image of the contour of the wells or grooves. However, for the purposes of microelectronics and microtechnology important to be able to endure formed on the surface of the figure in the mask - relief patterns in the underlying layers with the reduction of its size. This would allow and without the use of expensive lithography equipment to obtain structures of submicron and even nanometer size. This is not the lithographic method of forming relief patterns in the underlying layer can be used in the manufacture of integrated circuits when creating a contact window or tracks metallization.

The technical problem of the present invention is a transfer pattern of the mask topography of the underlying layer of the substrate with dimensions smaller than in the original mask, reaching sub-micron and nanometer values.

The technical result is achieved by the known method consists in the fact that the formed layer on the surface of the substrate of the original relief structure in the form of grooves and pits of micron and submicron sizes cause the film to reduce their width to submicron and nanometer dimensions, respectively, obtained after application of a film of a relief structure with the substrate, anisotropic and selectively relative to the material of the film and the original relief structure poisoned in reactive plasma before the formation of the substrate material of the relief structure of submicron and nanometer dimensions, depth more than twice its width.

The material of the exposed film and the source material embossed patterns are a common mask for etching the substrate material. The selectivity of etching of the substrate material relative to the material is hanasenai film and the original relief structure may be different. The main thing is that their selectivity etching was sufficient for etching deep grooves in the substrate material.

Anisotropic and selective etching can be carried out reactive ion-beam reactive method.

The difference of the proposed method is that obtained after application of a film of a relief structure with the substrate and anisotropic selectively relative to the material of the film and the original relief structure poisoned in reactive plasma before the formation of the substrate material of the relief structure of submicron and nanometer dimensions, depth more than twice its width.

Another difference is that the etching can be carried out reactive ion-beam method.

This technical result is not the lithographic reducing the size of the transferred patterns in the underlying layer is achieved by the following set of features.

On the surface of the substrate with a lithographic method in the layer of resist thickness of 0.5 to 1.5 μm is formed figure, for example, a groove width of 0.3 to 1.0 μm.

This original relief structure is applied film of any material (polymer, Si3N4and others) with a thickness of 0.2-0.6 μm. When this film is applied on the inner side surface of the groove. As a consequence, the original width of the groove is reduced by voynow the thickness of the lateral film. If the initial width of the grooves was micron sizes (˜1 μm), after application of the film, its size may be less than <0.5 µm, i.e. move in the submicron region. If the original dimensions of the grooves were in the submicron region, after application of the film, its width may already lie in the nanometer region, that is, to become less than 100 nm. Reducing the width of the source tracks depends on the thickness of the film deposited on the side walls of the grooves. Therefore, the film thickness is chosen in such a way that on the side of the original structure was deposited film of the required thickness.

Then obtained after deposition of the film embossed patterns can, as in the indirect method, CRP, anisotropic etching or sputtering to remove the film on the planar surface from the bottom and the top of the groove. This film remains on the side wall, because its thickness is greater there. Thus, if the original structure was a system of grooves of a certain size, after such operations the width of the groove is less than the double thickness side of the film.

Next is the final operation anisotropic and selective etching of the substrate material relative to the material of the applied film and the material of the original mask, which results in the transfer grooves of reduced dimensions in the underlying layer of material is.

The formation of the grooves of the smaller sizes can be made without prior operations anisotropic etching or sputtering of deposited film from the bottom and the top of the grooves, because it can be done at the final stage of the anisotropic and selective to the substrate material relative to the material of the film and the original relief layer.

Thus, with these transactions after you can control the width to be transferred to the substrate grooves.

The invention is illustrated by drawings, which schematically shows the sequence of the process of forming a relief structure with a reduced size. Let on the surface of a silicon substrate with a lithographic method in the layer of resist created the original relief structure (IRS), which is a system of parallel grooves of a width of d0(Figure 1). Further to this mask from the gas phase is deposited film of any material, for example polymer (PP) film. In the deposition PP film on the side surface grooves with vertical or nearly vertical walls (the slope of the walls is equal 87-90 degrees) the width of the grooves is reduced by double the width of the side PP film to the size of d1(Figure 2). The deposition of the film on the side wall of the groove width of the grooves can be reduced to nanometer size (<100 nm), if the original width is on the groove was submicron sizes (˜ 500 nm). Deposited film together with the material of the mask is a mask for subsequent operation of the plasma, selective and anisotropic etching of the substrate material. The depth of the grooves etched in the underlying layer is determined by the selectivity of the etching process (Fig 3).

Thus, in two stages, the combination of the deposition process of the film and then using it as a mask in the plasma etching process, you can get different patterns, including nanometer size in the layer below the mask material.

The claimed technical solution is not known from the prior art, which allows to make a conclusion about its novelty. In addition, it is not obvious from the prior art that speaks for its inventive step.

The invention is illustrated by examples of implementation of the proposed method.

Example 1. The formation of sub-micron, nanometer structures in the substrate, on which surface a layer of silicon dioxide, using the combined methods of plasma-chemical deposition and etching.

The method of forming sub-micron, nanometer structures in the layer of silicon dioxide using the combined methods of plasma-chemical deposition and etching is carried out in the reactor of a high-density plasma of high-frequency induction discharge of low pressure. The creation the structures of smaller sizes is carried out in two stages. In the first stage, carry out the deposition on formed by optical lithography in a photoresistive mask (FR) relief structure fluorocarbon film (state) of a given thickness, and the second - selective and anisotropic etching of silicon dioxide with respect to state and FR.

The silicon wafer with a layer of silicon dioxide (thickness 0.8 mm) and a photoresistive mask with a pattern representing a system of parallel strips of a width of 0.4, 08, 1.6 ám, mounted on the RF electrode. The thickness of the photoresistive mask on the basis of novolak was equal to 0.8 μm. The deposition state is carried out in a plasma CHF3+40% H2with the following parameters: pressure of 0.14 PA, a gas flow rate of 30 cm3/min (standard conditions), the discharge power is 1500 watts. The temperature of the substrate is 20°C. the deposition Time of 1 min. Thickness state on the surface of the mask is equal to 0.5 μm, and the side wall to 0.16 μm.

At the second stage when the same discharge parameters perform anisotropic etching of silicon dioxide by feeding the RF voltage to the electrode, which is the substrate. This increases the energy of the bombarding ions and is initially for some time, the etching state, and then SiO2. When investing RF power to the electrode, is equal to 125 W, the etching rate of silicon dioxide is 0.3 μm/min etching Time of 3 minutes, the etching Rate of Radelet depth steps, etched for a certain time. The shape of the groove etching determined by scanning electron microscope (SEM). Kind of grooves etched in the layer of SiO2after 1 min of etching and after removal of the state and FR in an oxygen plasma shows that the width of the grooves etched in the layer of silicon dioxide was less than the original width of the groove of 0.32 μm. Its width in the groove of the minimum size was 80 nm.

Example 2. The formation of submicron and nanometer structures in silicon using combined methods of plasma chemical deposition and etching.

The formation of sub-micron, nanometer structures in the silicon layer by using the combined methods of plasma-chemical deposition and etching is conducted in a reactor plasma high-frequency induction discharge of low pressure. The formation of the structures of smaller sizes occurs in two stages. In the first stage, carry out the deposition on a substrate fluorocarbon film of a specified thickness, and the second - selective and anisotropic etching of Si with respect to state and FR.

The silicon wafer with a layer of silicon dioxide and photoresistive mask with a pattern representing a system of parallel strips of a width of 0.4, 08, 1.6 ám, mounted on the RF electrode. The thickness of the photoresistive mask on the basis of novolak was equal to 0.8 μm. A layer of SiO2treated to Si through FR m the SKU. Next is the precipitation state in the plasma C4F8with the following parameters: pressure of 0.3 PA, a gas flow of 20 cm3/min (standard conditions), the discharge power is 900 watts. The temperature of the substrate is 20°C. the Time of deposition of 1.5 min. Thickness state on the surface of the mask and at the bottom of the groove equal to 0.6 μm, and the side wall to 0.15 μm. At the second stage when the same discharge parameters perform anisotropic etching of silicon through FU mask in the plasma of SF6+C4F8(50/50) by supplying an RF voltage to the electrode, which is the substrate. This increases the energy of the bombarding ions and is initially etching state, and then Si. The etching rate of silicon is 0.5 μm/min when put RF power to the electrode, is equal to 100 watts. The etching time 2 min. measuring the shape of the groove etching on SEM shows that the width of the grooves is reduced to 0.3 microns.

Thus, as follows from the above examples, the proposed method makes it possible to create patterns of submicron and nanometer dimensions.

1. The method of forming submicron and nanometer structures in the substrate, which has been formed in the layer on the surface of the substrate of the original relief structure in the form of grooves or wells of micron and submicron sizes cause the film to reduce their width to subm the crown cap and nanometer dimensions, respectively, characterized in that obtained after the application of the structure together with the substrate and anisotropic selectively relative to the material of the film and the original relief layer poison in reactive plasma to education in the surface relief patterns of submicron and nanometer dimensions, depth more than twice its width.

2. The method according to claim 1, characterized in that the anisotropic and selective etching carry out reactive ion-beam method.



 

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