Method for producing submicron and nanometric structure
FIELD: microelectronics, micro- and nano-technology.
SUBSTANCE: proposed method for producing submicron and nanometric structure includes formation of embossed structures on substrate surface, application of film to reduce embossed structure size to submicron and nanometric dimensions, and etching, anisotropic and selective relative to film material and source embossed layer, in chemically active plasma of structure obtained together with substrate material until embossed structure of submicron and nanometric dimensions, twice as deep as its width, is obtained.
EFFECT: provision for transferring mask pattern to bottom layer of substrate measured in terms of submicron and nanometric values.
2 cl, 3 dwg
The invention relates to the field of microelectronics, micro - and nanotechnology, and in particular to methods of forming structures using plasma-chemical deposition methods, etching the deposited material on the surface of the substrate, the mask to create a layout, and can be used in the manufacture of semiconductor devices and integrated circuits.
More specifically, the invention relates to methods of image transfer pattern of the mask to the underlying layer with the reduction of topological dimensions of the structure to nanometer size.
To create structures of submicron dimensions without additional lithography processes known method transfer path of the image (CRP method) (see Plasma technology in the manufacture of VLSI. Edited Nindiya. Moscow. World. 1987. S-445). The method consists in the following. A lithographic method, a relief structure on the surface with the vertical walls of the deposited film made of any material (Al, Si3N4, polysilicon and other). Because of its thickness on the side surface relief structure is higher than on the planar surface, then after the operation anisotropic etching or sputtering of this film with a planar surface, it will remain on the perimeter of the structure, indicating its path. After the next operation is then selective removal of material source of relief patterns on the surface of only the contour of the film of deposited material. This contour film can be used as an element of the device or as a transmission mask for such element (direct and indirect transfer method of the contour image). The size of an element depend on the film thickness on the side wall. Accurate profiles necessary element are determined empirically. This method was used to create a grating with a period less than the period of the original lattice (see D.C.Flanders, N.M.Efremov. Generation of <50 nm period grating using edge-defined techniques. J.Vac. Sci. Technol. 4, 1105 (1983) and for forming the gates of the MOS structures (see Plasma technology in the manufacture of VLSI. Edited Nindiya. Moscow. World. 1987. S).
However, using the indirect method CRPS, when the remaining film is a mask to transfer the image drawing mask in the underlying layer, to obtain a reduced image of the original relief structure is impossible. In the method of the CRP transferred image only the outline of the original structure. For example, if the figure in the original mask is the pits or grooves, using the indirect method CRPS in the underlying layer will be only the image of the contour of the wells or grooves. However, for the purposes of microelectronics and microtechnology important to be able to endure formed on the surface of the figure in the mask - relief patterns in the underlying layers with the reduction of its size. This would allow and without the use of expensive lithography equipment to obtain structures of submicron and even nanometer size. This is not the lithographic method of forming relief patterns in the underlying layer can be used in the manufacture of integrated circuits when creating a contact window or tracks metallization.
The technical problem of the present invention is a transfer pattern of the mask topography of the underlying layer of the substrate with dimensions smaller than in the original mask, reaching sub-micron and nanometer values.
The technical result is achieved by the known method consists in the fact that the formed layer on the surface of the substrate of the original relief structure in the form of grooves and pits of micron and submicron sizes cause the film to reduce their width to submicron and nanometer dimensions, respectively, obtained after application of a film of a relief structure with the substrate, anisotropic and selectively relative to the material of the film and the original relief structure poisoned in reactive plasma before the formation of the substrate material of the relief structure of submicron and nanometer dimensions, depth more than twice its width.
The material of the exposed film and the source material embossed patterns are a common mask for etching the substrate material. The selectivity of etching of the substrate material relative to the material is hanasenai film and the original relief structure may be different. The main thing is that their selectivity etching was sufficient for etching deep grooves in the substrate material.
Anisotropic and selective etching can be carried out reactive ion-beam reactive method.
The difference of the proposed method is that obtained after application of a film of a relief structure with the substrate and anisotropic selectively relative to the material of the film and the original relief structure poisoned in reactive plasma before the formation of the substrate material of the relief structure of submicron and nanometer dimensions, depth more than twice its width.
Another difference is that the etching can be carried out reactive ion-beam method.
This technical result is not the lithographic reducing the size of the transferred patterns in the underlying layer is achieved by the following set of features.
On the surface of the substrate with a lithographic method in the layer of resist thickness of 0.5 to 1.5 μm is formed figure, for example, a groove width of 0.3 to 1.0 μm.
This original relief structure is applied film of any material (polymer, Si3N4and others) with a thickness of 0.2-0.6 μm. When this film is applied on the inner side surface of the groove. As a consequence, the original width of the groove is reduced by voynow the thickness of the lateral film. If the initial width of the grooves was micron sizes (˜1 μm), after application of the film, its size may be less than <0.5 µm, i.e. move in the submicron region. If the original dimensions of the grooves were in the submicron region, after application of the film, its width may already lie in the nanometer region, that is, to become less than 100 nm. Reducing the width of the source tracks depends on the thickness of the film deposited on the side walls of the grooves. Therefore, the film thickness is chosen in such a way that on the side of the original structure was deposited film of the required thickness.
Then obtained after deposition of the film embossed patterns can, as in the indirect method, CRP, anisotropic etching or sputtering to remove the film on the planar surface from the bottom and the top of the groove. This film remains on the side wall, because its thickness is greater there. Thus, if the original structure was a system of grooves of a certain size, after such operations the width of the groove is less than the double thickness side of the film.
Next is the final operation anisotropic and selective etching of the substrate material relative to the material of the applied film and the material of the original mask, which results in the transfer grooves of reduced dimensions in the underlying layer of material is.
The formation of the grooves of the smaller sizes can be made without prior operations anisotropic etching or sputtering of deposited film from the bottom and the top of the grooves, because it can be done at the final stage of the anisotropic and selective to the substrate material relative to the material of the film and the original relief layer.
Thus, with these transactions after you can control the width to be transferred to the substrate grooves.
The invention is illustrated by drawings, which schematically shows the sequence of the process of forming a relief structure with a reduced size. Let on the surface of a silicon substrate with a lithographic method in the layer of resist created the original relief structure (IRS), which is a system of parallel grooves of a width of d0(Figure 1). Further to this mask from the gas phase is deposited film of any material, for example polymer (PP) film. In the deposition PP film on the side surface grooves with vertical or nearly vertical walls (the slope of the walls is equal 87-90 degrees) the width of the grooves is reduced by double the width of the side PP film to the size of d1(Figure 2). The deposition of the film on the side wall of the groove width of the grooves can be reduced to nanometer size (<100 nm), if the original width is on the groove was submicron sizes (˜ 500 nm). Deposited film together with the material of the mask is a mask for subsequent operation of the plasma, selective and anisotropic etching of the substrate material. The depth of the grooves etched in the underlying layer is determined by the selectivity of the etching process (Fig 3).
Thus, in two stages, the combination of the deposition process of the film and then using it as a mask in the plasma etching process, you can get different patterns, including nanometer size in the layer below the mask material.
The claimed technical solution is not known from the prior art, which allows to make a conclusion about its novelty. In addition, it is not obvious from the prior art that speaks for its inventive step.
The invention is illustrated by examples of implementation of the proposed method.
Example 1. The formation of sub-micron, nanometer structures in the substrate, on which surface a layer of silicon dioxide, using the combined methods of plasma-chemical deposition and etching.
The method of forming sub-micron, nanometer structures in the layer of silicon dioxide using the combined methods of plasma-chemical deposition and etching is carried out in the reactor of a high-density plasma of high-frequency induction discharge of low pressure. The creation the structures of smaller sizes is carried out in two stages. In the first stage, carry out the deposition on formed by optical lithography in a photoresistive mask (FR) relief structure fluorocarbon film (state) of a given thickness, and the second - selective and anisotropic etching of silicon dioxide with respect to state and FR.
The silicon wafer with a layer of silicon dioxide (thickness 0.8 mm) and a photoresistive mask with a pattern representing a system of parallel strips of a width of 0.4, 08, 1.6 ám, mounted on the RF electrode. The thickness of the photoresistive mask on the basis of novolak was equal to 0.8 μm. The deposition state is carried out in a plasma CHF3+40% H2with the following parameters: pressure of 0.14 PA, a gas flow rate of 30 cm3/min (standard conditions), the discharge power is 1500 watts. The temperature of the substrate is 20°C. the deposition Time of 1 min. Thickness state on the surface of the mask is equal to 0.5 μm, and the side wall to 0.16 μm.
At the second stage when the same discharge parameters perform anisotropic etching of silicon dioxide by feeding the RF voltage to the electrode, which is the substrate. This increases the energy of the bombarding ions and is initially for some time, the etching state, and then SiO2. When investing RF power to the electrode, is equal to 125 W, the etching rate of silicon dioxide is 0.3 μm/min etching Time of 3 minutes, the etching Rate of Radelet depth steps, etched for a certain time. The shape of the groove etching determined by scanning electron microscope (SEM). Kind of grooves etched in the layer of SiO2after 1 min of etching and after removal of the state and FR in an oxygen plasma shows that the width of the grooves etched in the layer of silicon dioxide was less than the original width of the groove of 0.32 μm. Its width in the groove of the minimum size was 80 nm.
Example 2. The formation of submicron and nanometer structures in silicon using combined methods of plasma chemical deposition and etching.
The formation of sub-micron, nanometer structures in the silicon layer by using the combined methods of plasma-chemical deposition and etching is conducted in a reactor plasma high-frequency induction discharge of low pressure. The formation of the structures of smaller sizes occurs in two stages. In the first stage, carry out the deposition on a substrate fluorocarbon film of a specified thickness, and the second - selective and anisotropic etching of Si with respect to state and FR.
The silicon wafer with a layer of silicon dioxide and photoresistive mask with a pattern representing a system of parallel strips of a width of 0.4, 08, 1.6 ám, mounted on the RF electrode. The thickness of the photoresistive mask on the basis of novolak was equal to 0.8 μm. A layer of SiO2treated to Si through FR m the SKU. Next is the precipitation state in the plasma C4F8with the following parameters: pressure of 0.3 PA, a gas flow of 20 cm3/min (standard conditions), the discharge power is 900 watts. The temperature of the substrate is 20°C. the Time of deposition of 1.5 min. Thickness state on the surface of the mask and at the bottom of the groove equal to 0.6 μm, and the side wall to 0.15 μm. At the second stage when the same discharge parameters perform anisotropic etching of silicon through FU mask in the plasma of SF6+C4F8(50/50) by supplying an RF voltage to the electrode, which is the substrate. This increases the energy of the bombarding ions and is initially etching state, and then Si. The etching rate of silicon is 0.5 μm/min when put RF power to the electrode, is equal to 100 watts. The etching time 2 min. measuring the shape of the groove etching on SEM shows that the width of the grooves is reduced to 0.3 microns.
Thus, as follows from the above examples, the proposed method makes it possible to create patterns of submicron and nanometer dimensions.
1. The method of forming submicron and nanometer structures in the substrate, which has been formed in the layer on the surface of the substrate of the original relief structure in the form of grooves or wells of micron and submicron sizes cause the film to reduce their width to subm the crown cap and nanometer dimensions, respectively, characterized in that obtained after the application of the structure together with the substrate and anisotropic selectively relative to the material of the film and the original relief layer poison in reactive plasma to education in the surface relief patterns of submicron and nanometer dimensions, depth more than twice its width.
2. The method according to claim 1, characterized in that the anisotropic and selective etching carry out reactive ion-beam method.
FIELD: engineering of semiconductor devices.
SUBSTANCE: invention concerns method and device for etching dielectric, removing etching mask and cleaning etching chamber. In etching chamber 40 semiconductor plate 56 is positioned. Dielectric 58 made on semiconductor plate is subjected to etching, using local plasma, produced by special device for producing local plasma during etching process. Mask for etching 60 is removed by means of plasma from autonomous source 54, generated in device for producing plasma from autonomous source connected to etching chamber. Etching chamber after removal of semiconductor plate is subjected to cleaning, using either local plasma, or plasma from autonomous source. To achieve higher level of cleaning, it is possible to utilize a heater, providing heating for chamber wall.
EFFECT: increased efficiency.
2 cl, 4 dwg
FIELD: process equipment for manufacturing semiconductor devices.
SUBSTANCE: plasma treatment chamber 200 affording improvement in procedures of pressure control above semiconductor wafer 206 is, essentially, vacuum chamber 212, 214, 216 communicating with plasma exciting and holding device. Part of this device is etching-gas source 250 and outlet channel 260. Boundaries of area above semiconductor wafer are controlled by limiting ring. Pressure above semiconductor wafer depends on pressure drop within limiting ring. The latter is part of above-the-wafer pressure controller that provides for controlling more than 100% of pressure control area above semiconductor wafer. Such pressure controller can be made in the form of three adjustable limiting rings 230, 232, 234 and limiting unit 236 on holder 240 that can be used to control pressure above semiconductor wafer.
EFFECT: enhanced reliability of pressure control procedure.
15 cl, 13 dwg
FIELD: plasma-chemical treatment of wafers and integrated circuit manufacture.
SUBSTANCE: proposed device that can be used in photolithography for photoresist removal and radical etching of various semiconductor layers in integrated circuit manufacturing processes has activation chamber made in the form of insulating pipe with working gas admission branch; inductor made in the form of inductance coil wound on part of pipe outer surface length and connected to high-frequency generator; reaction chamber with gas evacuating pipe, shielding screens disposed at pipe base, and temperature-stabilized substrate holder mounted in chamber base. In addition device is provided with grounded shield made in the form of conducting nonmagnetic cylinder that has at least one notch along its generating line and is installed between inductor and pipe; shielding screens of device are made in the form of set of thin metal plates arranged in parallel at desired angle to substrate holder within cylindrical holder whose inner diameter is greater than maximal diameter of wafers being treated. Tilting angle, quantity, and parameters of wafers are chosen considering the transparency of gas flow screen and ability of each wafer to overlap another one maximum half its area. In addition substrate holder is spaced maximum four and minimum 0.6 of pipe inner diameter from last turn of inductance coil; coil turn number is chosen to ensure excitation of intensive discharge in vicinity of inductor depending on generator output voltage and on inner diameter of pipe using the following equation:
where n is inductance coil turn number; U is generator output voltage, V; Dp is inner diameter of pipe, mm.
EFFECT: enhanced speed and quality of wafer treatment; reduced cost due to reduced gas and power requirement for wafer treatment.
1 cl, 6 dwg, 1 tbl
FIELD: organic chemistry, chemical technology.
SUBSTANCE: invention relates to a method for purifying octafluoropropane. Method is carried out by interaction of crude octafluoropropane comprising impurities with the impurity-decomposing agent at increased temperature and then with adsorbent that are able to remove indicated impurities up to the content less 0.0001 wt.-% from indicated crude octafluoropropane. The impurity-decomposing agent comprises ferric (III) oxide and compound of alkaline-earth metal in the amount from 5 to 40 wt.-% of ferric oxide and from 60 to 95 wt.-% of compound of alkaline-earth metal as measured for the complete mass of the impurity-decomposing agent. Ferric (III) oxide represents γ-form of iron hydroxyoxide and/or γ-form of ferric (III) oxide. Impurities represent at least one compound taken among the group consisting of chloropentafluoroethane, hexafluoropropene, chlorotrifluoromethane, dichlorodifluoromethane and chlorodifluoromethane. Adsorbent represents at least one substance taken among the group consisting of activated coal, molecular sieves and carbon molecular sieves. Crude octafluoropropane comprises indicated impurities in the amount from 10 to 10 000 mole fr. by mass. Invention proposes gas, etching gas and purifying gas comprising octafluoropropane with purity degree 99.9999 wt.-% and above and containing chlorine compound in the concentration less 0.0001 wt.-%. Invention provides enhancing purity of octafluoropropane.
EFFECT: improved purifying method.
13 cl, 11 tbl, 12 ex
FIELD: organic chemistry, chemical technology.
SUBSTANCE: invention relates to a method for purifying octafluorocyclobutane. Method is carried out by interaction of crude octafluorocyclobutane containing impurities with the impurity-decomposing agent at increased temperature and then with adsorbent that is able to eliminate indicated impurities up to the content less 0.0001 wt.-% from the mentioned crude octafluorocyclobutane. Impurity-decomposing agent comprises ferric (III) oxide and compound of alkaline-earth metal in the amount from 5 to 40 wt.-% of ferric oxide and from 60 to 95 wt.-% of compound of alkaline-earth metal as measured for the complete mass of the impurity-decomposing agent. Ferric (III) oxide represents γ-form of iron hydroxyoxide and/or γ-form of ferric (III) oxide. Impurity represents at least one fluorocarbon taken among the group consisting of 2-chloro-1,1,1,2,3,3,3-heptafluoropropane, 1-chloro-1,1,2,2,3,3,3-heptafluoropropane, 1-chloro-1,1,2,2,3,3,3-heptafluoropropane, 1-chloro-1,2,2,2-tetrafluoroethane, 1-chloro-1,1,2,2-tetrafluoroethane, 1,2-dichloro-1,1,2,2-tetrafluoroethane, hexafluoropropene and 1H-heptafluoropropane. Adsorbent represents at least one of representatives taken among the group including activated carbon, carbon molecular sieves and activated coal. Crude octafluorocyclobutane interacts with the mentioned impurity-decomposing agent at temperature from 250oC to 380oC. Invention proposes gas, etching gas and purifying gas including octafluorocyclobutane with purity degree 99.9999 wt.-% and above and comprising fluorocarbon impurity in the concentration less 0.0001 wt.-%. Invention provides enhancing purity of octafluorocyclobutane.
EFFECT: improved purifying method.
26 cl, 13 tbl, 10 ex
FIELD: chemical industry; methods of manufacture of the composites, catalytic agents, the materials for the gases storing.
SUBSTANCE: the invention is pertaining to the method of the selective manufacture of the ordered carbonic nanotubes in the boiling layer and may be used at the composites, catalytic agents, the materials for the gases storing. First manufacture the catalytic agent by deposition of the transition metal particles on the grains of the carrier in the "boiling bed" in the deposition reactor at the temperature of 200-300°C. The particles of the metal have the average size of 1-10 nanometers metered after the action of the temperature of 750°C. The grains of the catalytic agent contain 1-5 % of the mass particles of the metal. Fragments of metal also have the average size of 10-1000 μ. The carrier has the specific surface above 10 m2/g and is selected from the activated charcoal, silica, silicate, magnesium oxide or titanium oxide, zirconium oxide, zeolite oxide or the mixture of the grains of several of these materials. The ordered carbonic nanotubes are manufactured by decomposition of the gaseous source of carbon, for example, hydrocarbon, at its contact with at least of one solid catalytic agent. The decomposition is conducted in the "boiling" bed of the catalytic agent in the growth reactor at the temperature of 600-800°C. The invention allows to increase the output of the pure nanotubes with in advance calculated sizes.
EFFECT: the invention allows to increase the output of the pure nanotubes with in advance calculated sizes.
31 cl, 5 dwg, 3 tbl, 15 ex
FIELD: chemical industry; other industries; devices for production of the solid-phase nanostructured materials.
SUBSTANCE: the invention is pertaining to the nanotechnologies and may be used at production of the carbonic nanotubes. The invention provides, that in the steam generator (4) they prepare multiphase mixture of the initial substance and route it under pressure to the gasodynamic resonator (9), where the mixture detonates. The products of the detonation combustion through the nozzle (2) are fed in the chamber (3), extended and cooled forming clusters. The produced clusters are routed onto the target (12) with the formation die (1) arranged in the chamber (3). The substrate (11) of the target (12) is supplied with the temperature control device providing the cyclical heating and cooling. The formation and growth of the solid-phase nanostructured materials takes place on the formation die (1). As the pressure in the gasodynamic resonator (9) drops, the feeding of the multiphase mixture in it is restarts and the process repeats. The invention allows to provide the optimal conditions of the growth of the nanostructured materials and due to it to increased efficiency of the process.
EFFECT: the invention ensures provision of the optimal conditions for the growth of the nanostructured materials and the increased efficiency of the process.
FIELD: processes for modifying porous carriers such as photon crystals on base of SiO2 by means of inclusions phases of ferromagnetic metal or their oxides, possibly in functional micro-electronics, development of different type of magneto-optic systems for information recording, as sensing members of weak magnetic field pickups.
SUBSTANCE: method comprises steps of successively impregnating sample of photo crystal by solutions of ionic salts of metals; treating it in solution of oxalic acid; then annealing in air at 600 - 700 K for 1 - 2 h for further reduction at 700 K in hydrogen for 0.5 - 1 h or baking in inert atmosphere at 700 - 800 K for 1 - 2 h. Usage of ferromagnetic phases including such metals as Fe, Co, Ni and their oxides allows produce materials with magneto-optic properties.
EFFECT: volume occupation, namely of near-surface layers of photon crystal with inclusions of ferromagnetic phases.
FIELD: vacuum engineering; production of carbon nano-tubes from graphite paper used as auto-electronic emission sources.
SUBSTANCE: proposed method consists in modification of graphite paper coated with silica gel applied by means of current firing. First silica gel is applied on graphite paper surface. Silica gel contains nitrates of metals used as catalyst, mainly Fe, Co, Ni or their alloys. Then, paper is placed in vacuum plant and pressure of (1-5)·10-5 is built up. Such limit ensures minimum residual atmosphere of inert gas. Then, graphite paper is subjected to modification by current firing. Carbon nano-tubes are formed at temperature of 650-750°C. Proposed method is effective in production of nano-tubes with insignificant defects at diameter ranging from 10 to 100 nm.
EFFECT: facilitated procedure and low cost.
FIELD: electronic-vacuum engineering.
SUBSTANCE: invention is intended for implementation in manufacture of light sources, indicator lamps, and optic displays. Graphite heater is placed in working volume, into which nitrogen or nitrogen/argon blend (ratio from 1:10 to 1:1) is pumped in at pressure up to 15 MPa and removed. These operations are repeated threefold. Thereafter, above-indicated gas or gas blend is pumped in at pressure 10 to 90 MPa and working volume is heated to 2100-2200 K at velocity 1 to 100 K/min and aged for 10 min to 4 h. Temperature is the lowered to ambient value and then pressure is reduced to atmospheric value at velocity 1 MPa/sec. Resultant nitrogen-carbon nanofibers are withdrawn from working volume, dispersed in ethyl alcohol by means of ultrasonic disperser giving power 180-200 W for 5-15 min, filtered, and applied onto cathodic plate.
EFFECT: enabled manufacture of various-structure nanofibers in large amounts by easy and economic way.
3 cl, 6 dwg, 1 tbl, 7 ex
SUBSTANCE: proposed method for producing calibrated nano-capillary includes continuous monitoring of capillary diameter against set gage using monatomic gas as so-called minimal-diameter plug and molecular gas, as maximal-diameter plug; passage of mixture of these gases through capillary blank; evaluation of capillary diameter by variation in concentration ratio of atomic and molecular gases at controlled decomposition of gas mixture component within capillary. Device implementing this method has capillary blank and capillary holder incorporating capillary heater. Use is made of atomic- and molecular-gas filled cylinders; gas outlets of these cylinders communicate with gas mixer and gas mixture is passed from mixer outlet to mass-spectrograph though leak and capillary blank being heated.
EFFECT: ability of in-process monitoring of capillary diameter.
2 cl, 1 dwg, 2 tbl
FIELD: electronic engineering.
SUBSTANCE: method of formation of nano-sized clusters and of creation of ordered structures of them is based upon introduction of solution, containing material for formation of clusters, into material of substrate and in subsequent influence of laser radiation pulse onto the solution till generation of low-temperature plasma in it. Restoration of material of cluster to pure material takes place as a result of crystallization of the solution onto liquid substrate during process of plasma cooling down. Single-crystal quantum points are formed in channels of nano-sized pores, which points are joined with material of substrate. Not only two-dimensional array of clusters but three-dimensional array of clusters can be produced. There is also capability of creation of joined clusters composed of different materials.
EFFECT: improved efficiency.
11 cl, 8 dwg
FIELD: microelectronics, nanoelectronics, and semiconductor engineering; producing quantum device components and quantum-effect structures.
SUBSTANCE: proposed method for producing quantum dots, wires, and components of quantum devices includes growing of stressed film from material whose crystalline lattice constant is higher than that of substrate material. Thickness of stressed film being grown is smaller than critical value and film is growing as pseudomorphous one. Sacrificial layer is grown between stressed film and substrate which is then selectively removed under predetermined region of film thereby uncoupling part of the latter from substrate; this part is bulged or corrugated with the result that film stress varies causing shear of conduction region bottom (top of valence region) and formation of local potential well for carriers. In addition, stressed film may be composed of several layers of different materials; it may also have layer mainly holding charge carriers and layer practically free from charge carriers.
EFFECT: facilitated manufacture of quantum structures, enlarged range of materials used, and improved characteristics of components produced.
4 cl, 7 dwg
FIELD: nano-engineering; manufacture of nano-structures; methods of production of nano-fibers.
SUBSTANCE: proposed method consists in forming multi-layer structure on substrate; multi-layer structure includes at least one sacrificial layer and film structure from agent used for forming the fibers and divided into narrow strips; sacrificial layer is selectively removed and narrow strips are released from substrate, thus forming fibers. Multi-layer structure may include several sacrificial layers and several layers from which fibers will be formed. Film structure is divided into strips after growing or it is initially divided into narrow strips by forming it on special-pattern substrate. Proposed method makes it possible to obtain nano-fibers possessing high strength and resistance to surrounding medium. Process is compatible with standard technologies of manufacture of integrated circuits.
EFFECT: enhanced efficiency.
10 cl, 4 dwg
FIELD: nanoelectronics, microelectronics; microelectronic and microelectromechanical systems; manufacture of micro- and nanoprocessors and nanocomputers.
SUBSTANCE: proposed method consists in bringing the electrode to substrate surface, after which electrostatic potential which is negative relative to substrate surface point is fed to electrode; substrate is preliminarily placed in damp atmosphere and water adsorption film is formed on its surface, after which electrode is brought to substrate surface in such way that water adsorption film wets electrode; electrode is brought in contact with substrate surface; simultaneously with feed of electrostatic potential to electrode and electrode is subjected to pressure relative to substrate surface.
EFFECT: increased penetration into substrate volume (from 10 nm to 50 nm) of dielectric sections of oxide films.
17 cl, 3 dwg, 5 ex
FIELD: carbon materials.
SUBSTANCE: weighed quantity of diamonds with average particle size 4 nm are placed into press mold and compacted into tablet. Tablet is then placed into vacuum chamber as target. The latter is evacuated and after introduction of cushion gas, target is cooled to -100оС and kept until its mass increases by a factor of 2-4. Direct voltage is then applied to electrodes of vacuum chamber and target is exposed to pulse laser emission with power providing heating of particles not higher than 900оС. Atomized target material form microfibers between electrodes. In order to reduce fragility of microfibers, vapors of nonionic-type polymer, e.g. polyvinyl alcohol, polyvinylbutyral or polyacrylamide, are added into chamber to pressure 10-2 to 10-4 gauge atm immediately after laser irradiation. Resulting microfibers have diamond structure and content of non-diamond phase therein does not exceed 6.22%.
EFFECT: increased proportion of diamond structure in product and increased its storage stability.