Plasmo-chemical low-pressure reactor for etching and depositing materials

FIELD: microelectronics techniques, micro- and nano-technologies, namely design of plasmo-chemical reactor in which processes for etching and depositing different materials are realized.

SUBSTANCE: plasmo-chemical reactor includes reaction chamber, inductor, substrate holder, thin-wall cylindrical metallic shield and heat removal struts whose properties provide rate of temperature change of screen and time period for setting is stationary temperature. Thin-wall cylindrical metallic screen is secured to heat removal struts inside reaction chamber and it is spaced from walls of reaction chamber.

EFFECT: possibility for separate control of basic content of plasma composition and for depositing high-quality coating.

2 cl, 1 dwg, 1 ex

 

The invention relates to the field of microelectronics, micronanotechnology, namely the design of the plasma-chemical reactor, which produced plasma etch processes and deposition of various materials, and can be used in the manufacture of semiconductor, MEMS devices and integrated circuits.

There are various designs of high-density plasma reactors of various types of discharges low pressure, which are designed to implement them in the processes of etching and deposition of various materials. This reactor in which the plasma generation is carried out using inductively coupled RF, microwave, microwave discharges. Among the presented plasma reactors (High density plasma sources. Desigh, Physics and Performance. Ed.O.Popov. N.Jersey. 1995. P.445. Patent no EP 0794553 from 1997-9-10. Applied Materials INC (US) and Inductively coupled HDP-CVD reactor. Patent no EP 0819780 from 1998-01-21. Applied Materials INC (US) you can select the reactor in which the plasma source is an inductively coupled RF discharge. In such reactors is generated plasma with high density and uniform over the cross section of the ion flow. Plasmachemical reactor consists of a reaction chamber, the inductor and the substrate holder. To control the energy of the bombarding processed wafer ions on the substrate holder served a certain RF voltage. Emerging tricatel the economic potential of samospaseniyu determines the energy of the incident ions. The density of the ion flow and radicals in the plasma is enclosed in the discharge RF power. Thus, in the high-density plasma reactors can now separately control both the density and energy of the ion flow, thereby controlling the characteristics of plasma-chemical etching and/or deposition.

Closest to the claimed combination of features is plasmachemical reactor low pressure for etching and deposition of materials, including reaction chamber with heated walls, the inductor and the substrate holder RF electrode (Chinzie y, Ichiki t

., Kurosaki R., J. kiuchi's SiO2etching employing indictively coupled plasma with hot inner wall. Jpn. J. Appl. Phys. 1996. V.35. Pt.1. N.4B. P.2472-2476).

In this reactor the temperature increase of the inner walls of the reaction chamber of a high-density fluorocarbon C4F8plasma flat RF induction discharge from 300 to 600 K leads to an increase in the concentration of CFn(n<3) more than ten times and the change in the ionic composition of the plasma. This leads to higher selectivity of etching silicon dioxide with respect to silicon in 2 times. Thus, effectively changing the concentration of radicals in the reactor is possible, by changing the temperature of the walls of the reactor. However, increasing the wall temperature to high temperature by forced heating is not technological, taktak this leads to the need of cooling water of the external walls of the reaction chamber.

The aim of the invention is the provision of independent control not only ionic, and radical composition of plasma.

This goal is achieved by the fact that in the known plasma-chemical reactor, comprising a reaction chamber, the inductor and the substrate holder inside the reaction chamber is set spatially isolated from its metal walls of the cylindrical screen. The screen may be covered with dielectric film or a film of semiconductor material.

The difference of the proposed reactor design from the well-known is that the inside of the reaction chamber is set spatially isolated from its walls metal thin-walled cylindrical screen.

An additional difference is that the screen is covered with a dielectric or semiconductor film.

Such a screen can be placed in the reactor with RF with induction plasma source gelikonnogo type (drawing) and flat induction discharge (drawing b). The design of the proposed reactor, schematically shown in the drawing, includes: an inductor (1), reaction chamber (2), the holder of the substrate (3) and screen (4).

The invention consists in that in plasma the screen is heated to a high temperature. As a result, its surface changes the coefficients of birth and death according to what cnyh charged and neutral excited particles radicals. This leads to a radical change of the plasma composition in the reactor. Thus, by varying the temperature of the screen, you can change the concentration of radicals in the plasma of reactive gases. The rate of temperature change of screen time to establish its stationary temperature determined by the heat removal properties of the rack, which is attached to the screen. For carrying out the process at a certain temperature of the walls of the screen they are pre-heated in the plasma of inert gas (e.g. argon), and then is loaded on the holder substrate, serves a necessary precursor gases and ignited plasma. Although the process of etching or deposition in such a reactor occurs when changing the temperature of the walls of the reactor, this is not a disadvantage, since during the process (usually 1-2 min) heating of the walls is negligible. In addition, the required temperature can be set by adjusting the heat sink through the rack. The advantages of this reactor design is particularly manifest when the etching of materials in plasma heavy fluorocarbon gases, such as C3F8C4F8, CHF3and other similar freon composition CnFm. In the plasma of these gases on the walls of the formed fluorocarbon film, which hampers the process. To implement repeatable processes it is odimo periodically clean the walls of the reactor to remove it. When heating the walls of the reactor over 500 For this polymer film on the walls of the reactor is almost not formed and the frequency of cleaning the walls of the reactor increases sharply. In the deposition of SiO2plasma SiH4+O2heating of the walls of the reactor will also contribute to the reduction of the deposition rate on them is silicon dioxide.

The claimed technical solution is not known from the prior art, which allows to make a conclusion about its novelty. In addition, it is not obvious from the prior art that speaks for its inventive step.

The invention is illustrated an example of the use of this design of the reactor when the etching of SiO2in fluorocarbon plasma.

Example 1. Selective etching of silicon dioxide with respect to silicon in the reactor with heated internal aluminum screen in C4F8plasma RF induction discharge.

Selective etching of SiO2/Si conducted in the reactor, inside the reaction chamber which was installed aluminum screen. The scheme of the reactor shown in the drawing, and. Experiments were performed in C4F8plasma RF induction discharge of low pressure when hot and cold walls of the screen. Samples served as a silicon wafer with a layer without layer of silicon dioxide on the surface of which was deposited film of photoresist. In the layer of photoresist is a method of optical lithography was formed mask pattern, representing a system of parallel strips with a width of 0.8, and 1.0...1.6 ám, and open area with a size of 500 μm. The samples were placed on polictial, which was applied RF-power offset. The thickness of the photoresistive mask on the basis of novolak was 1.2 μm, a SiO2- 0.8 μm. The etching was performed under the following parameters: pressure of 0.14 PA, a gas flow of 10 cm3/min (standard conditions), the discharge power is 900 W power RF bias is 200 watts. The shield temperature was 30 and 270°C. the etching Time was 2 min. depth of the etched steps in silicon and silicon dioxide were measured using TALYSTEP profilometer.

The experiments showed that when the wall temperature of the reactor 30°With the depth of etching of SiO2amounted to 0.74 μm, a Si - 0.18 micron, and at a temperature of walls 270°With the depth of etching of SiO2was equal to 0.72 μm, a Si - 0,07 mm. Thus, at low and high temperatures of the walls of the screen, the etching rate of the SiO2remained almost constant, and the selectivity of etching of SiO2/Si increased almost 2.5 times.

1. Plasmachemical reactor low pressure for etching and deposition of materials, including a reaction chamber, the inductor and the substrate holder, characterized in that it is equipped with a metallic thin-walled cylindrical screen and the cooling racks, t is VA which determine the rate of temperature change of screen time to establish its stationary temperature, when the metallic thin-walled cylindrical screen mounted on the cooling racks inside the reaction chamber spatially isolated from its walls.

2. Plasma-chemical reactor according to claim 1, characterized in that the thin-walled cylindrical metal screen covered with a dielectric or semiconductor film.



 

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1 tbl, 2 ex

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