Diamond working method

FIELD: processes and equipment for working natural and artificial origin diamonds, possibly in jewelry for refining diamonds and for imparting to them new consumer's properties.

SUBSTANCE: method comprises steps of acting upon crystal with electron beam whose integral flux is in range 5 x 1015 - 5 x 1018 electron/cm2; annealing crystal in temperature range 300 - 1900°C and acting with electron beam in condition of electric field having intensity more than 10 V/cm at least upon one local zone of crystal for imparting desired color tone to said zone. Local action of electron beams is realized through protection mask. As irradiation acts in condition of electric field local flaws such as bubbles or micro-inclusions are effectively broken.

EFFECT: possibility for producing diamonds with different local three-dimensional colored images such as letters or patterns of different tints and color ranges.

2 dwg

 

The invention relates to the field of processing of precious stones, particularly diamonds, and can find application in the jewelry industry.

Closest to the claimed invention is a method of refining diamonds, including the combined effects of electron beams with integral threads in the range of 5·1015-5·1018cm-2and thermal annealing in the range of 300-1900°WITH (EN 2145365, WITH 30 IN 33/04, With 30 In 29/04, 01 31/06, 10.02.2000).

Known methods of processing diamonds have a significant drawback: they do not provide a local change colors and different shades of different fields of stones.

In the present invention are set the task of creating a diamond with different local volumetric color image, for example, letters or drawings of different shades and colors. And the task of retouching and destruction of existing local defects.

These tasks are solved in the way that the diamond processing the effect of the electron beam with an integral thread in the interval 5·1015-5·1018electron/cm and annealing in the temperature range 300-1900°in which the effect of the electron beam with the simultaneously acting electric field strength in excess of 10 V/cm is subjected to at least one local region of the crystal to give this region the security of a particular color hue.

Local impact electron beams carry a protective mask with Windows above mentioned local regions of the crystal.

Electron beams with different values of the integral of electron fluxes can affect various local region of the crystal through, respectively, different masks, giving the mentioned local areas diamonds of different colors and shades.

The window in the protective mask fitted over the natural defects of crystals in the form of micro inclusions with getting painted local area, masking the mentioned defects.

The window in the protective mask fitted over the areas of the crystal, adjacent to natural defects, getting painted local region of the crystal, which together with the aforementioned defect creates an image, for example, a letter or figure.

Local impacts can be performed scanning electron beam.

The proposed method is illustrated by drawings, where figure 1 and 2 show respectively a section view and a top view of the device, which can be implemented the proposed method.

The device of figures 1 and 2 contains lead demountable container, comprising bonded to each other (fasteners not shown) of the upper part 1 and lower part 2, which is electrically isolated between the Oh by the insulating layer 3, the container is diamond 4, over part of the upper surface of which the upper part 1 of the container has a hole 5. Parts 1 and 2 detachable container connected respectively to the positive and negative poles of a voltage source (not shown). The upper part 1, therefore, is a mask that protects the surface of the diamond from the effects of electron irradiation. The mask 1 has a hole 5. The shape of the opening may be a geometric shape, for example, a number or letter.

Diamond processing in accordance with the proposed method is as follows.

Crystal 4 is placed in a lead container with a thickness of the mask 1, is equal to 5 mm, the Upper portion of the container represents the mask 1, which has a window 5, which is, for example, the outlines of geometric shapes (rectangle) or letters. By applying voltage to the part 1 and part 2 of the container in the crystal 4 is generated, the electric field intensity of more than 10 In/see then on top of the container is exposed to electron irradiation. Because the upper part 1 of the container is a mask for an electron beam, e is affected only unmasked region of the crystal 4, located under the hole 5 in the mask 1.

Crystal diamond 4 is heated by electricity the CSOs current an external power source or high-intensity electron radiation. The irradiation container with crystal integral electron flux above 1016cm-2causes structural changes in the unmasked part of the diamond under the hole 5, resulting in the color change in this local part of the diamond. The intensity and color are substantially dependent on the electron energy and dose. Intense ionization by electron flow of material in the local area in the presence of an electric field leads to an increase in local power density, leading to the collapse of a number of defects such as bubbles and micro inclusions.

It should be noted that it is possible diamond, without a mask scanning electron beam with energies above 500 Kev.

The method allows to obtain diamonds from areas of different shades and colors, mostly green, blue, red-yellow and black, when the flow of electrons 1016-1018cm-2and ambient temperature 300-800°C. If this is possible in the crystal formation of three-dimensional figures and images in the form of letters, symbols, etc. the Presence of an electric field in excess of 102In/cm leads to local heating of the crystal to high temperatures above 1000°leading to the collapse of bubble defects. Different shades and colors are produced either by changing the electrical energy is s beam in the range of 0.3-10 MeV, either by replacing the masks.

The proposed method of processing diamonds can be widely used in the jewelry industry for their beautification and give them new properties.

The method of processing diamonds influence of the electron beam with an integral thread in the interval 5·1015-5·1018electron/cm2and annealing in the temperature range 300-1900°C, characterized in that the effect of the electron beam with the simultaneously acting electric field strength in excess of 10 V/cm is subjected to at least one local region of the crystal to give this area a particular color hue.



 

Same patents:

FIELD: production of diamonds of jewelry property; high-quality cleaning of diamonds.

SUBSTANCE: proposed method includes stage-by-stage treatment of diamond by mixture of acids under action of microwave radiation; at first stage, use is made of nitric acid and hydrogen peroxide at volume ratio of components of 10:1, respectively; at second stage, volume ratio of mixture of concentrated nitric acid, hydrochloric acid and hydrofluoric acid is 6:2:1, respectively; diamond is treated at temperature not higher than 210°C, pressure of 35 atm as set by loading ratio of autoclave equal to 1:10 at power of oven of microwave radiation of 1200 W; duration of each phase does not exceed 40 min. Proposed method ensures perfect cleaning of diamonds from contamination of mineral and organic nature including bitumen compounds on surface and in cracks of diamond.

EFFECT: enhanced efficiency; reduction of time required for process.

FIELD: decolorizing diamonds and brilliants.

SUBSTANCE: method is realized due to physically acting in closed reaction space upon samples of diamonds and brilliants by means of high pressure and temperature for time period sufficient for enhancing their quality. Pressure acting upon samples is in range 6 - 9 GPa in region of thermodynamic stability. Temperature during physical action upon samples is in range 1700 - 2300°C. Samples are subjected to physical action in medium of graphite powder filling reaction space. Heating till high temperature is realized due to applying AC to samples of diamond or brilliant through graphite powder at specific electric current power from 0.18 kWt/cm3 and more. Then electric power is gradually increased from zero till working value and further it is decreased and increased at least two times for some time interval at each change of electric power. Process of annealing samples is completed by smoothly lowering electric current power till zero. At physical action upon sample electric current intensity is lowered by 11 - 13 % and it is increased by 15 - 17 % for time interval from 8 min and more at each change of electric power. Sample is AC heated and it is cooled at rate no more than 0.05kWt/min per cubic centimeter of reaction volume of chamber.

EFFECT: shortened time period of treating for whole decolorizing, lowered voltage values, keeping of desired parameters existing before treatment in diamonds and brilliants.

3 cl, 3 ex

FIELD: thermochemical etching.

SUBSTANCE: method comprises etching the surface of articles made of high-melting chemically stable materials by applying the layer of an agent interacting the article material and heating the surface by laser pulse irradiating. The surface of the article is simultaneously affected by the laser pulses and vapors of a volatile composition, which is subjected to the pyrolytic decomposition to produce the above mentioned material. The amplitude of the laser pulse should be sufficient to cause the evaporation of the material.

EFFECT: enhanced adaptability to shaping.

3 cl

The invention relates to the field of processing (refining) of the diamond to give them a different color colouring and may find application in the jewelry industry

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The invention relates to the field of material science and can be applied in manufacturing semiconductor devices

The invention relates to the field of materials science, and more specifically to a device for surface treatment of materials for micro - and optoelectronics laser methods, and can be used in manufacturing semiconductor devices

The invention relates to the technology of semiconductor and dielectric materials with specified impurity diffusion profiles and, in particular, can be used in the formation of ultra-fine and ultra-deep p - n junctions in semiconductor materials for purification from impurities in the semiconductor and dielectric materials, and for a total change of their optical properties and color
The invention relates to the field of processing of diamonds

FIELD: electronic industry; methods of production of the crystals with the triclinic crystal system.

SUBSTANCE: the invention is pertaining to the method of production of the crystals with the triclinic crystal system. Substance of the invention: the monocrystals of lanthanum-gallium silicate grown in compliance with Czochralski method from the iridium crusible are subjected to the two-stage thermal treatment. The monocrystals are preliminary subjected to the vacuum annealing at the pressure of 1·10-2 -1·10-4Pa and the temperature of 600-1200°C within 0.5-10 hours, and then conduct their isothermal air aging at the temperature of 300-350°C within 0.5-48 hours. The invention allows reproducibly produce the discolored monocrystals of lanthanum-gallium silicate and also to speed up propagation of the surface-acoustic waves (SAW) by 1-1.5 m\s at the simultaneous decrease of dispersion of the waves propagation velocity by 20-30 ppm.

EFFECT: the invention ensures production of the discolored monocrystals of lanthanum-gallium silicate and allows to increase the speed of propagation of the surface-acoustic waves at simultaneous reduction of the waves propagation dispersion by 20-30 ppm.

FIELD: decolorizing diamonds and brilliants.

SUBSTANCE: method is realized due to physically acting in closed reaction space upon samples of diamonds and brilliants by means of high pressure and temperature for time period sufficient for enhancing their quality. Pressure acting upon samples is in range 6 - 9 GPa in region of thermodynamic stability. Temperature during physical action upon samples is in range 1700 - 2300°C. Samples are subjected to physical action in medium of graphite powder filling reaction space. Heating till high temperature is realized due to applying AC to samples of diamond or brilliant through graphite powder at specific electric current power from 0.18 kWt/cm3 and more. Then electric power is gradually increased from zero till working value and further it is decreased and increased at least two times for some time interval at each change of electric power. Process of annealing samples is completed by smoothly lowering electric current power till zero. At physical action upon sample electric current intensity is lowered by 11 - 13 % and it is increased by 15 - 17 % for time interval from 8 min and more at each change of electric power. Sample is AC heated and it is cooled at rate no more than 0.05kWt/min per cubic centimeter of reaction volume of chamber.

EFFECT: shortened time period of treating for whole decolorizing, lowered voltage values, keeping of desired parameters existing before treatment in diamonds and brilliants.

3 cl, 3 ex

FIELD: crystal growing.

SUBSTANCE: method comprises growing germanium monocrystals from melt onto seed followed by heat treatment, the latter being effected without removing monocrystals from growing apparatus at temperature within 1140 and 1200 K during 60-100 h, temperature field being radially directed with temperature gradient 3.0 to 12.0 K/cm. Once heat treatment comes to end, monocrystals are cooled to 730-750°C at a rate of at most 60-80 K/h. Monocrystals are characterized by emission scattering at wavelength 10.6 μm not larger than 2.0-3.0% and extinction not higher than 0.02-0.03 cm-1, which is appropriate for use of monocrystals in IR optics.

EFFECT: allowed growth of germanium monocrystals with high optical characteristics.

3 ex

FIELD: jewelry technology; manufacture of jewelry colored inserts.

SUBSTANCE: synthetic corundum contains alumina, color-forming additives and binder-paraffin. Required color is obtained as follows: for obtaining black color molybdenum oxide is added to alumina in the amount of 0.03%; for obtaining gray color, tungsten oxide is added to alumina in the amount of 0.01%; for obtaining blue color, neodymium oxide is added in the amount of 0.01%; for obtaining pink color, erbium oxide is added to alumina in the amount of 0.01%; for obtaining red color, chromium oxide is added in the amount of 0.05%. Proposed method of manufacture of jewelry articles includes molding in casting machines at a pressure of 4 atm and roasting; first roasting cycle is performed in continuous furnaces for burning-out the binder and is continued for 90 h at temperature of 1150 C; second roasting cycle is performed in batch furnaces at temperature of 1750 C and is continued for 170 h for forming and sintering of microcrystals making translucent crock at density of 4 g/cu cm and hardness of 9 according to Mohs hardness scale; then polishing is performed with the aid of diamond materials. Articles thus made have high-quality miniature texture at hardness which is disadvantage in relation to diamond only.

EFFECT: high quality of articles; enhanced hardness of articles.

7 cl

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FIELD: advanced techniques for creating diamonds, possibly micro- and nano-electronics for creating new super-strength construction materials widely used in different branches of industry, for producing semiconductor diamond base light emitting diodes, jewelry articles.

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EFFECT: possibility for producing high-purity diamonds of predetermined size and shapes.

8 dwg

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