Method for generating electric oscillations at frequencies close to those noted in biological specimens

FIELD: liquid semiconductors for biology, ecology, and medicine.

SUBSTANCE: proposed method for generating electric oscillations at frequencies close to those noted in biological specimens includes passage of electric current between electrodes immersed in n-type liquid organic semiconductor and placed at potential difference of 5-70 V. Current of 1 to 500 μA is passed between electrode placed at positive potential and that immersed in p-type liquid semiconductor.

EFFECT: ability of generating electric oscillations at frequencies close to those noted in biological specimens.

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The invention relates to the field of liquid semiconductors, which can be widely used in biology, ecology and medicine.

The known method of parametric generation of periodic oscillations, which uses the interaction of the microwave signal radiation of a certain frequency from the optical wave, resulting in the frequency and power of an optical wave increases approximately in 2 times. Part of the power of this wave comes as a pump in a degenerate parametric frequency divider for receiving the optical wavelength used for converting frequency (RF patent No. 2062538, IPC H 01 S 3/00). The device of waveguide type that implements this method allows to obtain the generation of coherent optical radiation for pumping the microwave range.

A known method of generating electric current, based on the chemical reduction of active compounds in the presence of metal, and the resulting current in the circuit. Oxidation of reduced forms of connection and return it to the initial state occurs in air in the absence of contact with metal (application No. 94044739, RU, IPC H 01 M 6/04).

A known method of generating electric current of low frequency, implemented using solid-state generator on the basis of a semiconductor wafer having two contacts and the area in which implementing the designed conditions for the occurrence of oscillations of electron-hole plasma type recombination waves, on the surface of the semiconductor wafer includes an insulator, which is deposited a metal layer that serves as managing contact. The method allows to obtain electrical oscillations of a frequency of 40-400 Hz and an amplitude of 0.5 to 50 mV for the application of a potential difference of 1-5 mV (A.S. USSR №439255, IPC H 01 L 29/00).

A known method of generating electric current, based on semiconductor oscillator with tunable frequency and containing a plate of monocrystalline silicon with two injects pins, zinc alloy with a concentration of NZnand a donor impurity concentration of the ND. Silicon has a resistivity ρ>104Ohm×cm, and the distance between them should not exceed the diffusion length of electrons at a ratio of dopants in silicon NZn≥ND. When a potential difference of 50 between an injecting contact and the flow of current between the anode and cathode obtained tunable frequency current in the range 10-105Hz (A.S. No. 782641, SU, IPC H 01 L 29/86).

Closest to the claimed invention is a method using a structure with distributed p-n-junction, through which is passed a current of 1-100 μa, n-region which holds the contact metal-tonello-transparent oxide semiconductor and ohmic contact between which the butts which indicate the potential difference 3-15, the resulting oscillations have a frequency from 1 kHz to 10 MHz and an amplitude of from 5 to 20 μa [Murawski BS, Kulikov O.N., Black VN, Recombination instability of the current in epitaxial R+-n-structures with locally introduced in the n-region of the impurity atoms and the definition of the parameters of deep centers on its basis. // Physics and technics of semiconductors, 2003, v.37, no 4, s-397].

All these methods are based on the use of solid-state structures. Physico-chemical properties of such solid-state structures have sharp contrast to biological objects (geometry, shape, density, aggregate state of matter etc), prolonged contact with them leads to complications, making significant changes in a biological system than hinders their application in biology and medicine.

The technical problem consisted in the development of a method of generating electrical oscillations, whose frequencies are in their parameters close to those observed in biological objects.

The technical problem is solved by excitation of the oscillation frequency from 1 Hz to 10 MHz on the structure, containing an aqueous solution of organic semiconductor is p-type, which cause organic n-type semiconductor. Between electrodes immersed in the n-type semiconductor, creating a potential difference of from 5 to 70 C. In an aqueous solution of organic polypr the Vodnik p-type enter the electrode, through him, and the positive electrode, immersed in the n-type semiconductor, miss DC current from 1 to 500 µa.

As the organic semiconductor p-type you can use casinomaha dye methylene blue concentration of an aqueous solution which 1-20% or triphenylmethane dye fuchsin, the concentration of the aqueous solution which is 1-20%, or glucose, the concentration of the aqueous solution which is 1-50%. As the n-type semiconductor aniline used.

Unlike the prototype of this method of generating electrical oscillations allows the use of liquid semiconductor structure on which it is possible to obtain electrical oscillations of a frequency of 1 Hz to 10 MHz, amplitude 2 µa - 30 mA. Characteristics of the electrical oscillations close to fluctuations in the observed biological objects.

From the literature not known information about how to obtain these electrical oscillations in liquid organic semiconductors and under specified conditions. Therefore, the claimed method is new and has significant differences.

The drawing shows a diagram of the device and its connection to the method.

On the surface of a solution of organic semiconductor p-type 1 was applied liquid organic n-type semiconductor 2, in which is immersed the electrodes 3 and 4. In the solution the op is ancescao semiconductor, semiconductor p-type 1, was immersed electrode 5. Between the electrodes 3 and 4 were connected in series resistance 6, which was filmed electrical oscillations, and the power source 7, which created the potential difference. For the DC current is applied between the electrodes 4 and 5, was completed by the key 8, connected sequentially microammeter 9, which controls the value of current, the constant voltage source 10 and a high-resistance resistor 11.

Specific example 1. To create a generation of electrical oscillations took a bath of dielectric material, in the particular case of plastics, of a width of 5 mm and a depth of 3 mm (drawing not shown), into which was poured on 10% aqueous solution casinomaha dye methylene blue as an organic semiconductor p-type 1 in the amount of 2.4×10-6DM3. On semiconductor p-type 1 caused aniline (H), an n-type semiconductor 2, in the amount of 1.6×10-6DM3. It was immersed two electrodes 3 and 4 made in the form of copper needles, galvanically treated tin, d=0.25 mm Wrench 8 in the circuit between the electrodes 4 and 5 was open. The power source 7 was created on the electrodes 3 and 4 are negative and positive potentials, respectively. The potential difference was equal to 30 C. Between the electrodes 3 and 4 connected resistor 6 RBSU is a resist 200 Ohms, with whom with the help of the oscilloscope (in the drawing not shown) fixed electrical oscillations, the amplitude of which was equal to 10 mA and a frequency of 950 Hz.

Example 2 same as example 1, but the key 8 was completed and, due to the presence in the circuit between the electrodes 4 and 5 of the microammeter 9, the DC power supply 10 having an EMF equal to 9, and high-resistance resistor 11 resistance 1 Mω, between the electrodes 4 and 5 were additionally asked current 50 µa, the resistor 6 is an electric fluctuations in the application of the potential difference 5 between the electrodes 3 and 4. The frequency of relaxation oscillation amplitude of 2 μa at this amounted to 20 kHz. Example 3 same as example 2, but as dissolved in distilled water of semiconductor p-type 1 took triphenylmethane dye fuchsin different concentrations in 5% steps from 1 to 20%. The increase in the concentration of fuchsin more than 20% does not affect the output parameters. The data obtained are shown in table 1.

Example 4 same as example 2 except that as the semiconductor p-type 1 used casinoby dye methylene blue in various concentrations, dissolved it in distilled water, 5% steps from 1 to 20%. The increase in the concentration casinomaha dye methylene blue more than 20% does not affect the output parameters. The data obtained is displayed in Alice 1. Example 5 same as example 2, but as a semiconductor p-type used a different glucose concentration, dissolving it in distilled water, with 10% increments from 1 to 50%. The increase of glucose concentration more than 50% has no effect on the output parameters. The data obtained are shown in table 1.

Table 1.
The dependence of vibration parameters from type semiconductor p-type and its concentration.
no examplesSemiconductor p-typeThe concentration of the aqueous solutionThe frequency of oscillation, HzThe amplitude of the generated oscillations, InSupply voltage, V
3triphenyl-1%150,0230
methane5%6000,0830
dye10%14000,8530
Magenta15%82001,4630
20%100001,830
4Ti is Zinovy 1%180,0330
dye5%4500,1530
methylene10%13000,930
blue15%75001,530
20%98001,8530
5Water1%120,1530
solution10%3800,530
glucose20%13001,230
30%76001,3530
40%8200to 1.8630
50%9600230

At concentrations lower than 1% of the semiconductor p-type generation was not observed.

Example 6. To create a generation of electrical oscillations took the tray out on the electric material, in the particular case of plastics, of a width of 5 mm and a depth of 3 mm (drawing not shown), into which was poured on 10% aqueous solution casinomaha dye methylene blue as an organic semiconductor p-type 1 in the amount of 2.4×10-6DM3. On semiconductor p-type 1 was applied aniline (H), an n-type semiconductor 2, in the amount of 1.6×10-6DM3. It was immersed two electrodes 3 and 4 made in the form of copper needles, galvanically treated tin, d=0.25 mm Between the electrodes 3 and 4 connected the resistor 6 a resistance of 200 Ohms, which with the help of the oscilloscope (in the drawing not shown) fixed electrical oscillations. Key 8 in the circuit between the electrodes 4 and 5 was closed. The power source 7 was created on the electrodes 3 and 4 are negative and positive potentials, respectively. The potential difference is changed in increments of 5 V between the electrodes 3 and 4 from 5 to 70 C. Due to the presence in the circuit between the electrodes 4 and 5 of the microammeter 9, the DC power supply 10 having an EMF equal to 9, and high-resistance resistor 11 resistance 1 Mω, between the electrodes 4 and 5 were additionally asked amperage from 1 µa to 500 µa increments of 50 µa. In this case, the resistor 6 recorded relaxation oscillations whose frequency was increased from 1 Hz to 10 MHz and amplitude growth from 0.01 to 2 C. the results of the observations are listed in TA the face 2.

Table 2.
The dependence of the voltage between the electrodes 3 and 4 and the magnitude of the current between the electrodes 4 and 5.
Supply voltage, VThe amount of current between the contacts 4 and 5 µaThe frequency of the relaxation oscillations HzThe amplitude of the pulses, In
0,5---
5110,01
1050420,08
201009400,15
3015012000,34
4020088000,56
50300130001,2
604008600001,6
7050095000001,9
80600--

From table 2 it follows that the use of a voltage value less than 5 is not practical, as it allows to obtain electrical oscillations across the resistor 6. At voltages above 70 In variations in the resistor 6 h is observed, as the disturbed structure of the device, allowing to observe fluctuations.

1. Method of generating electrical oscillations with frequencies similar to those observed in biological objects, comprising passing electric current and the application of a potential difference to the semiconductor generator, wherein the generator as a semiconductor p-type use an aqueous solution of organic semiconductor is p-type, which cause liquid organic n-type semiconductor with immersed electrodes, between which is applied a potential difference of 5-70 In and between the electrode having a positive potential, and is omitted in the semiconductor p-type electrode pass current from 1 to 500 µa.

2. The method according to claim 1, characterized in that the organic semiconductor is p-type use an aqueous solution triphenylmethane dye fuchsin with a concentration of from 1 to 20%.

3. The method according to claim 1, characterized in that the organic semiconductor is p-type use an aqueous solution of organic dye methylene blue concentration from 1%to 20%.

4. The method according to claim 1, characterized in that the organic semiconductor is p-type may be used an aqueous glucose solution with a concentration of from 1 to 50%.

5. The method according to claim 1, characterized in that the organic is one n-type semiconductor aniline used.



 

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