Semiconductor device with inbuilt protection from overvoltage

FIELD: engineering of semiconductor devices with inbuilt protection from disruption in case of overvoltage in closed state, namely, engineering of dinistors and thyristors, including symmetrical ones.

SUBSTANCE: semiconductor device with inbuilt protection from overvoltage is made on basis of silicon plate of n-type of electric conductivity with two main surfaces, positioned on opposite sides of aforementioned plate. Device contains, on the side of first main surface, emitter n-layer, diffusion base p-layer with etched recess, forming a collector p-n transition in the source silicon plate and having a portion with high gradient of concentration of acceptor admixture, positioned below the etched recess, emitter p-layer, formed on the side of second main surface of plate, electrodes of anode, cathode and controlling electrode. Diffusion base p-layer contains below aforementioned etched recess the acceptor admixture of first type, outside the recess - acceptor admixtures of both first and second types, having different diffusion coefficients, while depth h [micrometers] of etched recess satisfies the condition: 1,1≥h/(xj2-xj1)≥0,8, where xj1 and xj2 [micrometers] - depth of diffusion of acceptor admixtures of first and second types, respectively.

EFFECT: decreased relative spreading of values of device switching voltage UBO, simplified technology of its manufacture, increased percentage of production of non-defective devices.

1 tbl, 4 dwg

 



 

Same patents:

FIELD: engineering of powerful semiconductor devices, possible use for engineering of thyristors with decreased amplitude of reverse regeneration current and increased shape coefficient of reverse regeneration current.

SUBSTANCE: in known thyristor, in highly alloyed anode emitter layer of p+ conductivity type, positioned in anode emitter layer of p conductivity type on the side, opposite to wide base area, channels of p conductivity type are formed, connecting anode area and ohmic contact to highly alloyed anode emitter layer, having lower conductivity, than highly alloyed anode emitter layer.

EFFECT: decreased amplitude of reverse regeneration current and increased shape coefficient of reverse regeneration current of thyristor.

1 tbl, 3 dwg

The invention relates to the field of power semiconductor technology

The invention relates to the field of power semiconductor technology

The invention relates to the field of semiconductor engineering

The invention relates to the field of power semiconductor elements

The thyristor // 2173917
The invention relates to the field of electronic equipment, in particular to the design and technology of semiconductor silicon controlled thyristors multilayer structure with three electrodes, and can be used in electronic industry

Symmetric thyristor // 2106720
The invention relates to semiconductor devices, namely the symmetric thyristors constituting an integral unit consisting of two anti-parallel connected thyristors with a common control electrode, and can be used to create new types of symmetric thyristors

The invention relates to the construction of the integral power semiconductor device is a thyristor conducting in the reverse direction

FIELD: engineering of powerful semiconductor devices, possible use for engineering of thyristors with decreased amplitude of reverse regeneration current and increased shape coefficient of reverse regeneration current.

SUBSTANCE: in known thyristor, in highly alloyed anode emitter layer of p+ conductivity type, positioned in anode emitter layer of p conductivity type on the side, opposite to wide base area, channels of p conductivity type are formed, connecting anode area and ohmic contact to highly alloyed anode emitter layer, having lower conductivity, than highly alloyed anode emitter layer.

EFFECT: decreased amplitude of reverse regeneration current and increased shape coefficient of reverse regeneration current of thyristor.

1 tbl, 3 dwg

FIELD: engineering of semiconductor devices with inbuilt protection from disruption in case of overvoltage in closed state, namely, engineering of dinistors and thyristors, including symmetrical ones.

SUBSTANCE: semiconductor device with inbuilt protection from overvoltage is made on basis of silicon plate of n-type of electric conductivity with two main surfaces, positioned on opposite sides of aforementioned plate. Device contains, on the side of first main surface, emitter n-layer, diffusion base p-layer with etched recess, forming a collector p-n transition in the source silicon plate and having a portion with high gradient of concentration of acceptor admixture, positioned below the etched recess, emitter p-layer, formed on the side of second main surface of plate, electrodes of anode, cathode and controlling electrode. Diffusion base p-layer contains below aforementioned etched recess the acceptor admixture of first type, outside the recess - acceptor admixtures of both first and second types, having different diffusion coefficients, while depth h [micrometers] of etched recess satisfies the condition: 1,1≥h/(xj2-xj1)≥0,8, where xj1 and xj2 [micrometers] - depth of diffusion of acceptor admixtures of first and second types, respectively.

EFFECT: decreased relative spreading of values of device switching voltage UBO, simplified technology of its manufacture, increased percentage of production of non-defective devices.

1 tbl, 4 dwg

FIELD: engineering of semiconductor devices with self-protection from disruption during restoration of locking properties, namely, engineering of thyristors, including photo-thyristors.

SUBSTANCE: in semiconductor device with self-protection from disruption during restoration of locking properties, based on silicon plate with electro-conductance of n-type with two main surfaces, containing emitter p-layer, base n-layer, base p-layer, main emitter n-layer, forming a main thyristor zone between electrodes of anode and cathode, several discontinuous thyristor zones, within limits of which lifetime of unbalanced charge carriers in base n-layer is greater, than within limits of main thyristor zone, and external control zone, while anode electrode, emitter p-layer, base n-layer and base p-layer are common for main thyristor zone, discontinuous thyristor zones and external control zone, discontinuous thyristor zones are located inside main thyristor zone with output to main surfaces, while cathode electrode with adjacent main emitter n-layer are common both for main thyristor zone and for discontinuous thyristor zones, while lifetimes of unbalanced charge carriers in base n-layer within limits of discontinuous thyristor zones and within limits of main thyristor zone are selected on basis of certain conditions.

EFFECT: prevented indeterminacy during engineering of device in relation with certain values of lifetime of unbalanced charge carriers in base n-layers of discontinuous thyristor zones and main thyristor zone, and also dimensions of discontinuous thyristor zones and their amount, increased reliability of device in case of its switching under conditions of incomplete restoration of locking properties with simultaneous preservation of load capacity.

2 dwg

FIELD: semiconductor electronics; semiconductor bipolar devices using thyristor-type structure.

SUBSTANCE: proposed semiconductor bipolar device in the form of p-n-p-n thyristor triode designed for rectifying, amplifying, switching, or generating electric signals has four layers of different polarity of conductivity, p anode, intermediate n and p layers, and n cathode. Intermediate n and p layers have common lead that functions as triode emitter. Anode is connected to function as triode base and anode p-n junction is connected during electron-hole plasma injection to intermediate n and p layers. Cathode is connected to function as triode collector and cathode p-n junction functions to deplete intermediate p layer.

EFFECT: enhanced operating current of device when running as amplifier.

1 cl, 10 dwg

FIELD: semiconductor power devices such as power diodes, dinistors, and transistors, including symmetrical ones.

SUBSTANCE: proposed semiconductor power device built around silicon wafer of n polarity of conductivity with two main surfaces disposed on opposite ends of wafer has marginal bevel on at least main surface side and p diffusion layer forming high-voltage p-n junction with back chamfer, basic n layer adjoining mentioned p diffusion layer on one end and with diffusion layer passing to second main surface on other end that forms flat junction with straight chamfer together with n basic layer, as well as ohmic contacts for main surfaces. Mentioned high-voltage p-n junction has conical peripheral part and flat central part; conical peripheral part is tilted to flat central part through angle β. This angle and length d forming conical peripheral part meet definite conditions and are interrelated by equation providing for selecting their values.

EFFECT: enhanced stability of reverse current and breakdown voltage of high-voltage p-n junction and ability of breakdown voltage regulation.

1 cl, 2 dwg

FIELD: semiconductor power devices such as power thyristors.

SUBSTANCE: proposed semiconductor power device built around n silicon wafer with two main surfaces has p+ emitter layer, n base layer, p base layer, main n+ emitter layer, all arranged from bottom upwards; these layers form, together with anode and cathode electrodes, main thyristor region and peripheral control region; anode electrode, p+ emitter layer, n base layer, and p base layer are common for main thyristor region and peripheral control region. At least main n+ emitter layer has point-contact shunts regularly distributed throughout entire surface area and peripheral shunts separating this layer into sections facing peripheral control region. Main n* emitter layer has point-contact shunts of first type only close to its boundary and remaining part has point-contact shunts of both first and second types and their sectional area is smaller than that of first-type shunts, as viewed from top. Resistance of base p layer section between peripheral control region, cathode electrode, and mentioned sections of main n+ emitter layer is inversely proportional to area of peripheral control region.

EFFECT: enhanced stability of critical rate of voltage rise in closed state and on-time irrespective of peripheral control region; enhanced loading capacity of thyristor.

1 cl, 2 dwg

FIELD: electrical engineering.

SUBSTANCE: lockable thyristor incorporates, at least, one silicon chip made up of a set of p+n'Np'n+ cells connected in parallel. The lockable thyristor emitter junction represents a p+n'-transition in a thin n'-buffer layer 2 introduced into wide N-base 3 containing electronic traps with (5·1010÷5·1012) cm-3 arranged at the center of silicon inhibited zone. The collector p'N-junction is effected by diffusion of aluminum with surface concentration of (1016÷1017) cm-3 and arranged at the depth of (50÷120) mcm. The lockable thyristor cutting in is effected by sending the overvoltage pulse into power circuit in the locking, for the collector p'N-junction at the uprise rate of not less than 1.0 kV/ns, and cutting out is made by passing the current pulse via the control circuit in the direction locking for the control emitter junction.

EFFECT: increased operating frequency.

3 cl, 1 dwg

FIELD: electrical engineering.

SUBSTANCE: invention relates to electrical engineering and can be used in power engineering, high-power radio reengineering and electrical drives. Proposed method comprises generating control pulse comprising boost and tail parts with stuffing at F≥1/tq, where tq is the thyristor OFF time and allowing variable pulse duration with stuffing of λ=T(IL/IAM)> where IL - thyristor hold time, IAM is anode current amplitude, T is F frequency period. Proposed device to control thyristor or thyristor train made up of n thyristors connected in series comprises primary control system, current pickup connected in series with the said thyristors constant frequency variable-duration pulse generator, λ=T(IL/IAM), electro-optic channels and control pulse generator.

EFFECT: lower losses in control circuit, higher reliability.

2 cl, 2 dwg

FIELD: physics.

SUBSTANCE: invention relates to design of power semiconductor devices. The power semiconductor device which is based on an n-type silicon wafer with two main surfaces, having at least one emitter n+-layer on the side of the first main surface, a base p-layer which comes out to the first main surface and forms an emitter n+-p-junction with the emitter n+-layer, a base n-layer adjacent to the base p-layer and forms a collector p-n-junction with it, an emitter p-layer on the side of the second main surface, metallisation of emitter p+- and n+-layers and a base p-layer of a p+-n-p-type triode zone between metallisations of the emitter p+-layer and base p-layer and around it a p+-n-p-n+-type thyristor zone between metallisations of the emitter p+- and n+-layers, a local region with hydrogen-containing donors in the base n-layer within the p+-n-p-type triode zone lying between the collector p-n-junction and the middle of the base n-layer and spreading to at least part of the thyristor zone adjacent to the triode zone, an additional area with hydrogen-containing donors in the base p-layer which lies under the peripheral part of the emitter n+-layer.

EFFECT: high critical rate of rise of current when switching the device in case of overvoltage.

2 dwg

FIELD: electricity.

SUBSTANCE: power semiconductor device includes power locked thyristor and cascode MOS-driver (metal-oxide-semiconductor); crystals of power locked thyristor and MOS-transistors are placed in one pellet housing, and nanocrystal diamond films obtained by gas-phase synthesis or plasma-gas-phase synthesis are used as heat conducting electric insulating layers. Groups of parallel connected crystals uniformly located around crystal of locked thyristor can be used as MOS-transistors.

EFFECT: development of high-power hybrid switch on power locked thyristor with cascode MOS-driver in one pellet housing.

2 cl, 3 dwg

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