Process of resist removal in a plant for etching dielectric using a plasma beam

FIELD: engineering of semiconductor devices.

SUBSTANCE: invention concerns method and device for etching dielectric, removing etching mask and cleaning etching chamber. In etching chamber 40 semiconductor plate 56 is positioned. Dielectric 58 made on semiconductor plate is subjected to etching, using local plasma, produced by special device for producing local plasma during etching process. Mask for etching 60 is removed by means of plasma from autonomous source 54, generated in device for producing plasma from autonomous source connected to etching chamber. Etching chamber after removal of semiconductor plate is subjected to cleaning, using either local plasma, or plasma from autonomous source. To achieve higher level of cleaning, it is possible to utilize a heater, providing heating for chamber wall.

EFFECT: increased efficiency.

2 cl, 4 dwg

 

PREREQUISITES TO the CREATION of INVENTIONS

The present invention relates to the manufacture of semiconductor devices. In particular, the present invention relates to an improved technique of etching of the dielectric and removal of resist.

In the manufacture of some types of semiconductor devices, etching of the dielectric layers can be carried out using plasma etching. Such plasma etching system can be a system with plasma high-density-type systems with inductive discharge, or electron cyclotron resonance or system with plasma average density type system with a capacitive discharge. For etching in plasma high-density dissociation of gases is so effective that when filing into the chamber of the oxygen chamber walls are cleaned. This clearance may be due to the heat released by the plasma, UV radiation, plasma, and often a dissociation caused by plasma.

System etching in a plasma medium density type plasma etching with a capacitive discharge can be used for etching in oxygen. The action of such systems plasma etching in most cases based on the chemistry of the formation of polymers. In such systems, the etching in the plasma density, it is to rule, on the wall of the chamber are formed of polymer deposits. When using such systems usually allowed the formation of polymer deposits on the walls of the chamber and is then wet cleaning to remove these polymer deposits. The need for wet cleaning systems with average plasma density, generally due to insufficient efficiency of dissociation and low energy plasma in contact with the walls, to ensure satisfactory cleaning of polymers. Partial cleaning of the chamber walls and incomplete removal of polymer deposition efficiency of new polymers on the chamber walls in some cases becomes low, which may lead to the formation of particles, which is potentially an additional source of pollution.

In the plasma etching using a plasma confinement device type proposed in U.S. patent No. 5,534,751 by Lenz and others under the title "Device for plasma etching with plasma confinement", issued 9 July 1996, in General, the region of plasma formation is limited to special restrictive ring that holds the plasma in a certain area at a distance from the chamber wall. Storage of plasma in a certain field in General allows to obtain a sufficiently dense and hot enough plasma in Plovdiv city suburbs the STI spacing rings capable of cleaning this restrictive ring.

Known cases of devices for chemical vapour deposition (PFHO) with Autonomous sources of plasma, which, as a rule, are used for cleaning camera PFHA. Usually these plasma devices based on fluorine chemistry. Such PFHO devices are used for deposition from the vapor phase.

There is information about the use of an independent source of plasma in the chamber to remove (for example, residues of the resist), in which the plasma is obtained from an independent source, is typically used when removing a mask for etching.

Based on the above, it is possible to draw a conclusion about the desirability of creating systems with average plasma density, which used plasma has a density high enough to ensure cleaning of the chamber wall, means for receiving the plasma, providing a fairly complete cleaning of the chamber walls.

SUMMARY of the INVENTION

The invention concerns in one of the examples of its implementation system etching of the dielectric in the plasma average density with additional auxiliary plasma source, providing clearance of this system, plasma etching, and the ability to remove resist residues within the etching system.

In the second example of implementation of Britanie concerns the system of etching in the plasma average density with additional auxiliary plasma source and a heater for heating the chamber walls, provides the ability to clear the walls of the chamber.

In the third embodiment, of the invention describe a system for etching held in plasma average density with an additional independent source of plasma, which increases the speed of removal of the resist.

Below is a more detailed description of these and other features of the present invention makes reference to the following figures.

BRIEF DESCRIPTION of DRAWINGS

Presented in the attached drawings figures, illustrating the present invention, are purely illustrative, and not restrictive, and the same elements in these figures are designated by the same positions.

Figure 1 - schematic illustration of the camera etching.

Figure 2 - scheme of the sequence of operations in the etching process using the camera etching, presented in figure 1.

Figure 3 - schematic representation of another embodiment of the camera etching.

4 is a diagram of the sequence of operations in the etching process using the camera etching, presented in figure 3.

A DETAILED DESCRIPTION of the PREFERRED embodiments

The following is a detailed description of the present invention with reference to several preferred embodiments, illustrated in the enclosed precincts of the AMI. In the following description numerous specific details of the present invention is set forth in a manner that provides full understanding. Specialist in the art, however, it is obvious that the present invention may be practiced without some or without all of these specific details. In other instances, detailed descriptions of well-known process operations and/or structures is omitted to prevent the occurrence of difficulties in understanding the subject matter of this invention.

To facilitate detailed discussion figure 1 shows the schematic illustration of the camera etching 10 corresponding to the preferred example embodiment of the invention. Luggage etching 10 is composed of a grounded wall of the chamber 12, the electrostatic holder 14 connected to a source of high frequency energy 16, the distribution system provide the Etchant gas 18 in the upper part of the chamber etching 10 connected to a source of gaseous provide the Etchant 20, a heater 22 is mounted adjacent to the wall of the chamber 12 with its outer side, and Autonomous plasma source 24 connected to a source of gaseous reagent to remove residual resist 25. The wall of the chamber 12 may be made of anodized aluminum or conductive ceramics.

Figure 2 presents the sequence diagram OPE the Nations, carried out in the chamber of the etching used in the preferred embodiment of the invention. Semiconductor plate 26 is fixed to the electrostatic holder 14 is installed in the chamber etching 10 in its lower part (operation 201). On its surface a semiconductor wafer 26 has a dielectric layer 28 type oxide layer, for example a layer of silicon dioxide or nitride layer, and a portion of the dielectric layer 28 is covered resistol mask 30, and another portion of the dielectric layer 28 is not covered by this resistol mask 30.

Then in the chamber of the etching 10 release the portion of the dielectric layer 28, which is not covered resistol mask 30 (operation 202). Overgrazing perform, providing a flow of gaseous provide the Etchant into the chamber etching 10. The pressure in the chamber etching is brought to a value of 20÷200 mtorr. In the preferred embodiment of the invention the gaseous provide the Etchant includes a gaseous fluorocarbon with the General molecular formula CyFxand oxygen. The amount of gaseous provide the Etchant is known from the prototype. The gaseous provide the Etchant is supplied by the source of gaseous provide the Etchant 20 through a special distribution system 18 in the upper part of the chamber etching 10. The source of high frequency energy 16 delivers to the electrostatic holder 14 vyskocil the private signal, causing high-frequency oscillations between the electrostatic holder 14 and the grounded wall of the chamber 12, by exciting the gaseous provide the Etchant, and the electrostatic holder 14 acts as a cathode and the wall of the chamber 12 as the anode. Horny provide the Etchant gaseous dissociates to ions, which results in excitation under the action of high frequency oscillations form in the chamber of the etching plasma surrounding the semiconductor wafer 26. Since a semiconductor wafer is surrounded by the plasma, thus there is a drain part of the dielectric layer 28, which is not covered resistol mask 30. The wall of the chamber 12, the electrostatic holder 14, the energy source 16, the distribution system provide the Etchant gas 18 and the source of gaseous provide the Etchant 20 form and support the plasma around the semiconductor wafer and therefore supply the local plasma. As a result of the etching process on the wall of the chamber 12 is formed polymer deposition 32 formed from a material resistol mask 30 and gaseous fluorocarbon used as the provide the Etchant. Once a sufficient depth of etching of the dielectric layer 28, the etching operation (operation 202) ends with the termination of generation of the local plasma.

Autonomous plasma source 24 is shown with the United with the wall of the chamber 12. Moreover, this stand-alone plasma source 24 may be placed in another location in the vicinity of the camera etching chamber 10. The entrance between the Autonomous plasma source 24 and the inner part of the camera 10 must be large enough to allow passage of sufficient oxygen radicals formed in the auxiliary plasma source 24, from this independent source plasma 24 inside the chamber 10 without loss. The Autonomous action of the plasma source 24 may be based on the use of microwave and inductive discharge or some other independent source of high-density plasma, providing the dissociation of gaseous reagents. An example of such an Autonomous source is ASTRON company ASTeX of goburn Massachusetts, USA. Oxygen comes in a contained plasma source 24 from a source of gaseous reagent to remove residual resist 25. In offline plasma source 24 causes dissociation of oxygen and the appearance of oxygen radicals, which is directed into the chamber etching 10. The pressure in the chamber is brought to a value of 100÷1000 mtorr. In the reaction, in which oxygen radicals come with resistol mask 30, is the removal of this resistol mask 30 (operation 204). In this preferred embodiment, at the stage of removal of the mistakes of the resist supply of gaseous provide the Etchant source gas of 20 and provide the Etchant power from a source of high frequency energy 16 stops so removing resistol mask 30 is provided solely oxygen radicals. In another embodiment, removal resistol mask local plasma can be used in combination with plasma from an independent source. In yet another embodiment, as a gaseous reagent to remove residual resist can be used a mixture of hydrogen and nitrogen or this mixture in combination with oxygen.

To interrupt the operation of removal of residual resist the flow of reagents from the ion source plasma 24 is stopped. Semiconductor plate 26 is removed from the chamber etching 10 (operation 206). For cleaning the walls of the chamber 12 from polymeric fat 32 it is subjected to heating using a special heater 22. In the preferred embodiment, the chamber wall is heated to a temperature of 80÷300°C. In a more preferred embodiment of the invention the wall of the chamber is heated to a temperature of 120÷200°and in the most preferred embodiment of the invention is to a temperature of 150°C. the Oxygen is supplied in a contained plasma source 24 from a source of gaseous reagent to remove residual resist 25. In offline plasma source 24 causes dissociation of oxygen and the appearance of oxygen radicals, which is directed into the chamber etching 10. When this is the pressure in the chamber is brought to a value of 100÷ 1000 mtorr. In the reaction, in which oxygen radicals come with the heated wall of the chamber 12, there is a clearing of the wall from polymeric fat 32 (operation 208). In another preferred example for obtaining plasma from an independent source may be used a mixture of hydrogen and nitrogen or this mixture in combination with oxygen. Upon reaching a sufficient level of cleaning the walls of the chamber 12, the flow of plasma from an independent source 24 is stopped and the camera etching 10 can be used for processing of the next semiconductor wafer.

Figure 3 presents a schematic representation of the camera etching 40 corresponding to another preferred embodiment of the invention, which uses held plasma. Luggage etching 40 is composed of a wall of the chamber 42, the electrostatic holder 44, which is connected with a source of high frequency (HF) energy 46, grounded anode 48, a source of gaseous provide the Etchant 50, the guide rings 52 and offline plasma source 54 connected to a source of gaseous reagent to remove residues of the resist 55. Mounted in the lower part of the chamber etching 40 electrostatic holder 44, which acts as the cathode, and the anode 48 in the upper part of the chamber etching 40 is placed at a close distance from each other, that is to limit the dimensions of the region of plasma formation. To further limit the formation of plasma from its lateral surface of this area is surrounded by a bounding rings 52 that holds the plasma in the vicinity of the center of the camera etching 40 and at a distance from the chamber wall 42. Restrictive ring 52 may be made of quartz in the form of annular plates arranged separately from each other with the formation of narrow gaps. In this example there are three restrictive ring 52, but in other embodiments may be used one or more of such restrictive rings. Narrow gaps between restrictive rings 52 designed to prevent the spread of the plasma to the wall of the chamber 42, as the value is so small that almost all plasma penetrating through these gaps, is extinguished as a result of collisions with the bounding rings 52 before it reaches the chamber wall 42.

4 shows a sequence diagram of operations performed in the chamber of the etching used in the preferred embodiment of the invention. Semiconductor plate 56 is fixed to the electrostatic holder 44 installed in the chamber etching 40 in its lower part (operation 401). On the surface of the semiconductor plate 56 has a dielectric layer 58 type oxide layer, for example layer dioxide, PU glue, which I or nitride layer, and a portion of the dielectric layer 58 is covered resistol mask 60, and the other part of the dielectric layer 58 not covered by this resistol mask 60.

Then in the chamber of the etching 40 release the portion of the dielectric layer 58, which is not covered resistol mask 60 (operation 402). Overgrazing perform, providing a flow of gaseous provide the Etchant into the chamber etching 40. The pressure in the chamber etching is brought to a value of 20÷200 mtorr. In the preferred embodiment of the invention the gaseous provide the Etchant includes a gaseous fluorocarbon with the General molecular formula CyFxand oxygen. The amount of gaseous provide the Etchant is known from the prototype. The gaseous provide the Etchant is supplied by the source of gaseous provide the Etchant 50 connected to the camera etching 40. The source of high frequency energy 46 submits to the electrostatic holder 44 high-frequency signal, causing high-frequency oscillations between the electrostatic holder 44 and the grounded anode 48, which excite the gaseous provide the Etchant. Horny provide the Etchant gaseous dissociates to ions, which results in excitation under the action of high frequency oscillations form in the chamber of the etching plasma surrounding the semiconductor wafer 56. As a semiconductor wafer, finds what I'm surrounded by plasma, when this occurs, the drain part of the dielectric layer 58, which is not covered resistol mask 60. Electrostatic holder 44, the energy source 46, the anode 48 and the source of gaseous provide the Etchant 50 generate and maintain the plasma around the semiconductor wafer and therefore supply the local plasma. As a result of the etching process on the bounding ring 52 is formed of polymer deposition 62 formed from a material resistol mask 60 and gaseous fluorocarbon used as the provide the Etchant. Once a sufficient depth of etching of the dielectric layer 58 etching operation (operation 402) ends with the termination of generation of the local plasma.

Autonomous plasma source 54 is shown connected with the wall of the chamber 42 through the anode 48. The entrance between the Autonomous plasma source 54 and the interior chamber 40 must be large enough to allow passage of sufficient oxygen radicals formed in the auxiliary plasma source 54, Autonomous plasma source 54 into the chamber 40 without loss. The Autonomous action of the plasma source 54 may be based on the use of microwave and inductive discharge or some other independent source of high-density plasma, providing dissocia the July gaseous reagents. An example of such an Autonomous source is ASTRON company ASTeX of goburn Massachusetts. Oxygen comes in a contained plasma source 54 from a source of gaseous reagent to remove residues of the resist 55. In offline plasma source 54 causes dissociation of oxygen and the appearance of oxygen radicals, which is directed into the chamber etching 40. The pressure in the chamber is brought to a value of 100÷1000 mtorr. In the reaction, in which oxygen radicals come with resistol mask 60 is removed resistol mask 60 (operation 404). In this preferred embodiment, at the stage remove residual resist the flow of gaseous provide the Etchant source gas provide the Etchant 50 and power from a source of high frequency energy 46 continues, so removing resistol mask 60 is provided by oxygen radicals from offline plasma source 54 and the local plasma. In another preferred example for obtaining plasma from an independent source may be used a mixture of hydrogen and nitrogen or this mixture in combination with oxygen. To interrupt the operation of removal of residual resist the flow of reagents from a stand-alone plasma source 54 and the local generation of plasma is stopped.

Semiconductor plate 56 is removed from the chamber etching 40 (operation 406). For PTS is tough restrictive rings 52 of polymer deposits 62 provide a flow of gaseous provide the Etchant, represents oxygen or nitrogen/hydrogen into the chamber etching 40. The pressure in the chamber etching is brought to a value of 100÷1000 mtorr. The amount of gaseous provide the Etchant is known from the prototype. The source of high frequency energy 46 submits to the electrostatic holder 44 high-frequency signal, causing high-frequency oscillations between the electrostatic holder 44 and the grounded anode 48, which excite the gaseous provide the Etchant. Horny provide the Etchant gaseous dissociates to ions, which results in excitation under the action of high frequency oscillations form in the chamber of the etching plasma surrounding the semiconductor wafer 56. As the local plasma is held in the field of small size, limited by the electrostatic holder 44, the anode 48 and restrictive rings 52, the density and energy of this local plasma reaches values that provide the ability to clear the restrictive ring 52 from the polymer deposition 62. Upon reaching a sufficient level of cleaning restrictive rings 52 local generation of plasma is stopped, and the camera etching 40 can be used for processing of the next semiconductor wafer.

In another embodiment, both plasma - and local, and plasma from an independent source are used on the I cleaning as cameras etching without confined plasmas, and the camera held by etching with plasma.

Above the present invention has been described in several preferred examples of its implementation, allowing for modifications, permutations, and equivalents that fall outside the scope of the invention. It should also be noted that there are numerous alternative ways to implement the methods and devices, which are the objects of the present invention. Therefore, the following appended claims should be interpreted to include all such modifications, permutations and equivalents as not beyond the legitimate essence and scope of the present invention.

1. Device for etching dielectric layer located on the substrate containing the camera etching a dielectric having a chamber wall, a stand-alone plasma source connected to the camera etching dielectric for delivery of particles of reagent into the chamber of the etching of the dielectric, a source of gaseous provide the Etchant for the supply of gaseous provide the Etchant within the walls of the chamber, a device for receiving the local plasma, providing the transformation of gaseous provide the Etchant of the local plasma, and many restrictive rings installed with clearances relative to each other within the boundaries of the chamber wall around the area of plasma formation.

2. The device according to the .1, characterized in that the gaseous provide the Etchant comprises a fluorocarbon.

3. The device according to claim 2, characterized in that the gaseous provide the Etchant includes oxygen.

4. Device according to any one of claims 1 to 3, characterized in that the Autonomous plasma source contains the source gas to produce a plasma from an independent source and the device for activation of plasma from an independent source, which excites the gas coming from the source gas to produce a plasma from an independent source, and turns it into plasma.

5. The device according to claim 4, characterized in that the composition of the gas coming from the source gas to produce a plasma from an independent source, includes oxygen, nitrogen and hydrogen.

6. The device according to claim 1, characterized in that it also contains a heater for heating the walls of the chamber to a temperature above 80°C.

7. Method of etching at least part of which is located on the substrate dielectric layer having areas covered by the mask for etching, and the areas not covered by the mask for etching, characterized in that it contains the operation of placing the substrate in the chamber etching; ensure flow of gaseous provide the Etchant into the chamber etching; local excitation of plasma from the gaseous provide the Etchant in the chamber of the etching, the etched portions of the layer of dielectric that are not covered by the mask for the management; generating plasma in the offline plasma source; submitting the plasma from the ion source into the chamber etching; removing the mask for etching with the substrate located in the chamber etching; and removing the substrate from the chamber etching.

8. The method according to claim 7, characterized in that it contains also the clean-up operation of the camera etching plasma, carried out after removal of the substrate from the chamber etching.

9. The method according to claim 7, characterized in that the gaseous provide the Etchant also contains oxygen.

10. The method according to claim 7, characterized in that it contains also the operation of an interruption of flow of the gaseous provide the Etchant into the chamber of the etching is carried out before surgery filing plasma from an independent source in the camera etching.

11. The method according to any of claims 7 to 10, characterized in that as the plasma gas in the offline source plasma using oxygen, nitrogen and hydrogen.

12. The method according to claim 8, characterized in that the cleaning operation of the camera etching plasma contains an operation of heating the walls of the chamber etching to temperatures above 80°C.

13. The method according to item 12, characterized in that the cleaning operation of the camera etching plasma also contains the operation of generating plasma in the offline plasma source; submitting the plasma from the ion source into the chamber etching and plasma from an independent source to remove deposits on retai walls of the chamber.

14. The method according to claim 7, characterized in that it contains also the operation of the plasma confinement within the bounding rings, and also that the operation of cleaning the camera etching plasma contains the feeding of gaseous provide the Etchant into the chamber of the etching of the local excitation of plasma from the gaseous provide the Etchant in the chamber of the etching and the use of local plasma from the gaseous provide the Etchant to remove the deposits with restrictive rings.



 

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1 cl, 6 dwg, 1 tbl

FIELD: process equipment for manufacturing semiconductor devices.

SUBSTANCE: plasma treatment chamber 200 affording improvement in procedures of pressure control above semiconductor wafer 206 is, essentially, vacuum chamber 212, 214, 216 communicating with plasma exciting and holding device. Part of this device is etching-gas source 250 and outlet channel 260. Boundaries of area above semiconductor wafer are controlled by limiting ring. Pressure above semiconductor wafer depends on pressure drop within limiting ring. The latter is part of above-the-wafer pressure controller that provides for controlling more than 100% of pressure control area above semiconductor wafer. Such pressure controller can be made in the form of three adjustable limiting rings 230, 232, 234 and limiting unit 236 on holder 240 that can be used to control pressure above semiconductor wafer.

EFFECT: enhanced reliability of pressure control procedure.

15 cl, 13 dwg

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