Collimating optical system for semiconductor lasers

FIELD: optical engineering.

SUBSTANCE: collimating optical system has objective disposed in series along beam path, which objectives are mounted in opposition to semiconductor lasers, and first group of prisms. Ribs of refracting two-faced angles of lasers are oriented in parallel to planes of semiconductor junctions. First positive component is mounted one after another along beam path behind group of prisms. Second group of prisms is disposed close to back focal plane of first positive component. The group of prisms separates input light beam along line being perpendicular to planes of semiconductor junction to two bundles. Polarization prism is disposed on the way of mentioned light beams to bring them into coincidence to one common light beam. Second positive component of the system has front focal plane brought into coincidence with back focal plane of first positive component.

EFFECT: increased brightness of output bundle of beams.

2 cl, 4 dwg

 

The invention relates to a collimating optical systems with refractive elements and can be used in optical systems locations, optical communication, management, and Supervisory devices.

Known collimating optical system containing sequentially arranged along the first rays negative optical component, the first group of prisms, a positive optical component, the second group of prisms and the second negative optical component, in which the aperture angle of the optical components is chosen in the range of 20-40°, refracting angle of the prism is selected within 10-40°and the angle β the orientation of the prisms with respect to the optical axis associated with the refractive angle α ratio β=(2÷3)α (USSR author's certificate No. 1624392, CL 6 G 02 B 27/30, Appl. 26.12.88, publ. 30.01.91, bull. No. 4).

As follows from the description, the most effective is the use of the specified optical system for callmerobbie emission of semiconductor lasers. This eliminates the need in the first optical component.

The disadvantage of this optical system is not sufficiently high energy, the brightness of the output beam. The reason is not enough high energy intensity is the energy limited brightness body glow semiconductor lasers.

The closest to the technical nature of the claimed optical system is a collimating optical system for a semiconductor laser containing sequentially located along the ray lens and prisms, refracting ribs dihedral angles which are oriented parallel to the plane of the semiconductor junction, the refractive angles of the prisms are selected in the range of 25-40°, angular magnification G of the group of prisms is selected from the following equation:

G=θ||,

where θthat θ||the angles of divergence of the semiconductor laser 0.5 in planes parallel and perpendicular to the plane of semiconductor transition, respectively, the front focal plane of the lens is shifted relative to the subject plane at a distance of δ0defined value:

δ0=(a||-G·a)/(5/6·D·θ||),

where a||, a- body size glow of a semiconductor laser in planes parallel and perpendicular to the plane of semiconductor transition, respectively, and the longitudinal spherical aberration δ(u) the lens is selected from the following equation:

δ(u)=-2/3·δ0 (u/θ)2,

where u is the aperture angle of the lens (Patent RF №2107743, CL 6 G 02 B 27/30, Appl. 12.01.95, publ. 10.01.98, bull. No. 1).

As follows from the description, collimating optical system can be used to obtain a collimated beam from the multiple semiconductor lasers. Thus instead of a single lens is used several lenses mounted opposite the semiconductor lasers, and the angular magnification G of the group of prisms is selected from the following equation:

G=k·θ||,

where θ||that θthe angles of divergence of the radiation of semiconductor lasers in planes parallel and perpendicular to the plane of semiconductor transition, respectively, k is the number of semiconductor lasers.

The disadvantage of this optical system is not sufficiently high energy, the brightness of the output beam. The reason is not enough high energy intensity is the energy limited brightness body glow semiconductor lasers.

An object of the invention is to increase the energy of the brightness of the output beam.

The technical result is achieved by the collimating optical system for semiconductor lasers containing sequentially on th the e in the course of the rays of the lenses, set opposite the semiconductor lasers, and the first group of prisms, refracting ribs dihedral angles which are oriented parallel to the planes of semiconductor transitions imposed successively along the rays for the first group of prisms of the first positive component, the second group of prisms placed near the rear focal plane of the first positive component and separating the incoming light beam on a line perpendicular to the planes of semiconductor transitions into two beams, a polarizing prism, placed in the path of these light beams and combining them in space in one common light beam, and the second positive component, the front focal plane of which is combined with the rear focal plane of the first positive component.

The increase of energy brightness of the output beam is provided by the combination in the space of two light beams from two areas of the body luminescence of each of the semiconductor lasers with polarization prism.

In the particular case in collimating optical system for semiconductor lasers of the second group of prisms is made in the form of two prisms, the first of which is installed near the rear focal plane of the first positive component and has four reflecting faces, while the output and output faces are oriented perpendicularly incident on the prism light beam and parallel to the input face of the polarization prism for p-polarization, the first and fourth reflective faces oriented at an angle of 45° to incident on the prism light beam and perpendicular to the planes of semiconductor transitions, second and third reflective faces oriented parallel to the incident on the prism light beam and at an angle of 45° to the planes of the semiconductor transitions, boundaries of the input and the first reflecting faces from the side edges of the dihedral angle formed by these edges are oriented perpendicular to the planes of semiconductor junctions and are located at the intersection with the axis of the incident on the prism light beam and the second prism is installed in the path of the rays that have passed by the first prism, and has two reflecting face, the input face is oriented perpendicularly incident on the prism light beam exit face is oriented parallel to the incident on the prism light beam and parallel to the input face of the polarization prism for s-polarization, the first reflecting face is oriented at an angle of 45° to incident on the prism light beam and at an angle of 45° to the plane of the semiconductor transitions, the second reflecting face is oriented parallel to the incident on the prism light beam and at an angle of 45° to the planes of the semiconductor transitions.

The implementation of the second group of prisms in the form of two prisms the easiest way to ensure achival the separation of the two beams from the two plots tel glow of each of the semiconductor lasers and combining them into space using a polarizing prism.

Figure 1 shows a collimating optical system for semiconductor lasers, the cross-section in a plane perpendicular to the plane of the semiconductor transitions, figure 2 is the same in a plane parallel to the plane of the semiconductor transitions. Figure 3 shows the second group of prisms, view from the entrance of the rays. Figure 4 shows the image of the body of the glow of semiconductor lasers, two - pass and after the passage of the rays through the second group of prisms and polarizing prism.

Collimating optical system includes sequentially located along the ray collimating lens 2 mounted opposite the semiconductor lasers 1, the first group of prisms, the first positive component 7, the second group of prisms, polarizing prism 10 and the second positive component 11.

The first group consists of four prisms prisms 3, 4, 5 and 6, each of them has two refracting faces. The edges of the dihedral angles formed by refracting faces of the prisms are oriented parallel to the planes of semiconductor transitions of semiconductor lasers 1.

In the coordinate system shown in Fig.1-2, the plane of the semiconductor transitions are oriented parallel to the YZ plane, the optical axis of the lens is oriented parallel to the Z-axis, and the edges refractive dihedral angles of the prisms - PA is alleline the y-axis.

The second group of prisms placed near the rear focal plane of the first positive component 7 and separates the incoming light beam on a line perpendicular to the planes of semiconductor transitions into two beams. Polarizing prism 10 is placed in the path of these light beams and combines them into a space in one common light beam.

In the coordinate system shown in Fig.1-3, the line that divides the incoming light beam parallel to the axis X. the Input face of the polarizing prism 10 for p-polarization is perpendicular to the Z axis, the input facet to s-polarized perpendicular to the y-axis.

Front focal plane of the second positive component 11 is combined with the rear focal plane of the first positive component 7, so that these components constitute a telescopic system.

In the particular case of the second group of prisms is formed by two prisms 8 and 9.

The prism 8 is installed near the rear focal plane of the first positive component and has four reflecting faces. The input and output faces of the prism 8 is oriented perpendicularly incident on the prism light beam and parallel to the input face of the polarization prism 10 for p-polarization. The first and fourth reflective faces oriented at an angle of 45° to incident on the prism light beam and perpendicular to the locoteam semiconductor transitions. The second and third reflective faces oriented parallel to the incident on the prism light beam and at an angle of 45° to the planes of the semiconductor transitions. The boundaries of the input and the first reflecting faces from the side edges of the dihedral angle formed by these edges are oriented perpendicular to the planes of semiconductor junctions and are located at the intersection with the axis of the incident on the prism light beam.

Prism 9 is installed in the path of the rays that have passed by the first prism, and has two reflecting faces. The input face of the prism 9 is oriented perpendicularly incident on the prism light beam. The output face is oriented parallel to the incident on the prism light beam and parallel to the input face of the polarization prism 10 for s-polarization. The first reflecting face is oriented at an angle of 45° to incident on the prism light beam and at an angle of 45° to the plane of the semiconductor transitions. The second reflecting face is oriented parallel to the incident on the prism light beam and at an angle of 45° to the planes of the semiconductor transitions.

In the coordinate system shown in Fig.1-3, the input and output faces of the prism 8 is perpendicular to the axis Z. the First and fourth reflecting faces perpendicular to the bisector of the angle formed by the axes Y and Z. the Second and third reflecting face parallel bisects the CE dihedral angle, formed by the planes XZ and YZ. The boundaries of the input and the first reflecting faces from the side edges of the dihedral angle formed by these edges parallel to the X-axis and located at the intersection with the z axis.

The input face of the prism 9 is perpendicular to the Z-axis of the exit face perpendicular to the axis Y. the First reflecting face perpendicular to the bisector of the angle formed by the axes X and Z. the Second reflecting face parallel to the bisector of the dihedral angle formed by the planes XZ and YZ.

Collimating optical system works in the following way. The light beam from each of the semiconductor lasers is converted to the corresponding collimating lens, the collimated light beam, the axis of which is parallel to the z-axis In the XZ-plane, all these beams are combined into a single beam, which passes through the first group of prisms. The first group of prisms transforms the light beam in the XZ plane, reducing its transverse size and increasing its angular divergence.

Received colliercounty light beam focuses the first positive component 7. In the focal plane of the first positive component 7 is formed in the body image of the luminescence of semiconductor lasers, which shape is a rectangle elongated in the direction of the axis Y. This body image is divided into the second group in the m line, parallel to the axis X, into two parts. Accordingly, the light beam is split into two light beams.

Since the radiation of a semiconductor laser is polarized, the light beams are also polarized. The polarization vector parallel to the y-axis.

These light beams pass through the second group of prisms on different optical paths and fall on the polarization prism 10. One of the beams passes a polarizing prism 10 without reflection, and the other is reflected on the inner face. As a result, after the polarization prism, these beams are combined with each other in space.

The received light beam is converted second positive component 11 of the collimated light beam.

When the split light beams may experience energy loss due to light scattering at interfaces. These losses are practically eliminated, if the body of the glow of each of the semiconductor lasers to perform in the form of two identical radiating sections with a gap between them. In this case, the image of the body of the glow in the focal plane of the first positive component 7 will be a two rectangles with a gap between them.

Figure 4 shows such a case. Here the rectangles ABCD and EFGH represent the image of a body glow is poluprovodnikov lasers before passage of the rays through the second group of prisms, and the rectangles A B C D' E F G H' is the same after the passage of the rays through the second group of prisms and polarizing prism 10.

In the particular case of body image luminescence of semiconductor lasers formed near the input faces of the prisms 8 and 9. The plot ABCD body image glow falls on the prism 8, and the area EFGH - on the prism 9. The light beam from the area ABCD passes through the prism 8 along the path O1O2O3O4O7and the light beam from the area EFGH - through the prism 9 in the path O1O5O6O7. After the passage of the rays of the area ABCD is converted to plot A D S D', and the area EFGH - in plot E F G H'. Plots A B C D' E F G H' superimposed on each other, the optical axes of the two beams parallel to the axis Z. Therefore, these beams are combined in one common light beam.

Thus, in the collimating optical system is provided by the increase of energy brightness of the output beam twice. In addition provide a more uniform illumination of the image field. All this enhances the use of collimating optical system in the optical systems locations, optical communication, management and Supervisory devices operating in the field.

In addition, if the first group of prisms to perform in accordance with the patent of the Russian Federation No. 2148850, to the. 7 G 02 B 27/30, 27/09, Appl. 28.07.98, publ. 10.05.00, bull. No. 13 provides the constancy of the spatial position of the output collimated beam when exposed to low and high temperature environment, which further extends the functionality of the collimating optical system.

1. Collimating optical system for semiconductor lasers containing sequentially located along the rays with lenses that are installed opposite to the semiconductor lasers, and the first group of prisms, refracting ribs dihedral angles which are oriented parallel to the planes of semiconductor junctions, characterized in that series along the rays for the first group of prisms installed the first positive component, the second group of prisms placed near the rear focal plane of the first positive component and separating the incoming light beam on a line perpendicular to the planes of semiconductor transitions into two beams, a polarizing prism, placed in the path of these light beams and combining them in space in one common light beam, and the second positive component, the front focal plane of which is combined with the rear focal plane of the first positive component.

2. Collimating optical system to the floor of the conductor laser according to claim 1, characterized in that the second group of prisms is made in the form of two prisms, the first of which is installed near the rear focal plane of the first positive component and has four reflecting faces, and the input and output faces are oriented perpendicularly incident on the prism light beam and parallel to the input face of the polarization prism for p-polarization, the first and fourth reflective faces oriented at an angle of 45° to incident on the prism light beam and perpendicular to the planes of semiconductor transitions, second and third reflective faces oriented parallel to the incident on the prism light beam and at an angle of 45° planes of semiconductor junctions, the boundaries of the input and the first reflecting faces from the side edges of the dihedral angle formed by these edges are oriented perpendicular to the planes of semiconductor junctions and are located at the intersection with the axis of the incident on the prism light beam and the second prism is installed in the path of the rays that have passed by the first prism, and has two reflecting faces, the input face is oriented perpendicularly incident on the prism light beam exit face is oriented parallel to the incident on the prism light beam and parallel to the input face of the polarization prism for s-polarization, the first reflecting the surrounding face is oriented at an angle of 45° to the incident on the prism light beam and at an angle of 45° to the planes of the semiconductor transitions, the second reflecting face is oriented parallel to the incident on the prism light beam and at an angle of 45° to the planes of the semiconductor transitions.



 

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