Selective etchant for aluminum-arsenic and aluminum-gallium-arsenic layers relative to gallium-arsenic one

FIELD: manufacture of microelectronic and nanoelectronic devices.

SUBSTANCE: selective etchant of AlAs and AlGaAs layers relative to GaAs has iodine I2 and organic solvent wherein iodine I2 is dissolved, proportion of mentioned components being as follows, mass percent: iodine, 0.1 - 4; organic solvent, 96 - 99.9. Isopropyl alcohol or acetone can be used as organic solvent. Enhanced selectivity of etching AlAs and AlGaAs layers including those with low Al content (below 40%), as well as their high selectivity relative to InAs and InGaAs are attained at room temperature.

EFFECT: ability of using proposed etchant in nanotechnology for separating upper layers in the order of several single layers.

2 cl

 

The invention relates to micro-, nanoelectronics and nanoelectromechanical and can be used for fabrication of devices, micro-, nanoelectronics and nanoelectromechanical, in particular, when forming the instrument three-dimensional nanostructures.

The transition to an increasingly small objects comparable in size to the molecules or atoms is a stable trend in the development of a number of engineering fields, such as micro-, nanoelectronics, nanoelectromechanical. The size reduction leads, first, to change the element base, for example, if the devices microelectromechanical made on the basis of Si, the devices nanoelectromechanical mainly based on the use of the structures And3In5and, secondly, to create technology that is able to reproducibly create the elements of the devices is strictly a given shape with dimensions less than 10 nm. In this regard, the urgent search for technical solutions, allowing for the formation of nanostructures to be used in conjunction with the processes of someorganization standard technology.

Known to provide the Etchant selective layers of AlAs, AlGaAs relatively GaAs (Eli Yablonovitch, T. Gmitter, J.P.Harbison and R. br. Extreme selectivity values in the lift-off of epitaxial GaAs films. Appl. Phys. Lett. 51 (26), 1987, p.2222-2224)containing hydrofluoric acid (HF) and water, and these components are taken in the ratio, wt.%: hydrofluoric acid is - 10, the water - the rest.

The disadvantages of this provide the Etchant selective layers of AlAs, AlGaAs is that it can efficiently with a selectivity component, the value of more than 107to use only in relation to the layers of AlAs, AlGaAs with an Al content of more than 40%. When the etching of layers of AlGaAs with an Al content less than 40%, it is inefficient. Another disadvantage is the inability of highly selective etching at room temperature layers of AlAs, AlGaAs, including with the low content of Al, less than 40%, relative to InAs, InGaAs. It should be noted and the inefficient use of this provide the Etchant in nanotechnology, for example, in the manufacture of 3-dimensional nanostructures, nanotubes, spirals, Gavrilovic, because using it is not possible to produce objects having dimensions of the order of a few monolayers (C. J. Prince. Three-dimensional samoformiruyushchikhsya nanostructures on the basis of free tight heterophasic. News of higher educational institutions. Physics 46(6), 2003, p.35-43; V.Ya.Prinz. Properties of semiconductor nanotubes and nanoshells fabricated on (111), (110) GaAs, Si and on vicinal (001) GaAs substrates. Physica E 23 (2004); Viaprint, Vaseline, Avesco. Samoformiruyushchikhsya semiconductor microtubules and nanotubes. Microsystem engineering, 2003, No. 6, p.29-35). The use of this provide the Etchant in nanotechnology with monocline films is ineffective due to lack of size select the particular etching. According to the requirements of nanotechnology to provide the Etchant, the size selectivity of etching to exceed 107. These deficiencies caused by the etching mechanism, including education GaF3with the subsequent dissolution.

The closest technical solution to the claimed purpose and set of features is to provide the Etchant selective layers of AlAs, AlGaAs relatively GaAs (Wai Shing Lau, Eng Fong Chor, Soon Poh Kek, Wan Hamzah bin Abdul Aziz, Hui Chin Lim, Chun Huat Heng and Zhao Rong. The Development of a Highly Selective KI/I2/H2O/H2SO4Etchant for the Selective Etching of Alfor 0.3Ga0,7As over GaAs. Jpn. J. Appl. Phys. Vol.36 (1997) p.3770-3774 Part 1, No. 6A, June 1997)containing potassium iodide (KI), iodine (I2), water (H2O) and sulfuric acid (H2SO4), and these components are taken in the ratio, wt.%: potassium iodide (KI) - 20,3; iodine (I2) - 23,5; sulfuric acid (H2SO4) - 47,8; water (H2O) - else.

The disadvantages of this known technical solution is the low selectivity etching at room temperature. To achieve high selectivity etching must be performed at low temperature. Thus, the greatest selectivity achieved when etching of the Alfor 0.3Ga0,7As a relatively GaAs at a temperature of 3°and is 330. Another disadvantage is the inability to use this provide the Etchant in nanot is hnologie (Viaprint. Three-dimensional samoformiruyushchikhsya nanostructures on the basis of free tight heterophasic. News of higher educational institutions. Physics 46(6), 2003, p.35-43; V.Ya.Prinz. Properties of semiconductor nanotubes and nanoshells fabricated on (111), (110) GaAs, Si and on vicinal (001) GaAs substrates. Physica E 23 (2004); Viaprint, Vaseline, Avesco. Samoformiruyushchikhsya semiconductor microtubules and nanotubes. Microsystem engineering, 2003, No. 6, p.29-35), due to the extremely low selectivity. The value of the highest attainable selectivity for the provide the Etchant is clearly insufficient, because the required amount of the etching selectivity higher than 107. It should be noted, and the impossibility of highly selective etching at room temperature layers relative to InAs, InGaAs. The reason for these shortcomings is the mechanism of etching.

The technical result of the invention is:

- improving the selectivity of etching at room temperature layers of AlAs, AlGaAs, including with the low content of Al, less than 40%, relative to GaAs;

- achieving the possibility of highly selective etching at room temperature layers of AlAs, AlGaAs, including with the low content of Al, less than 40%, relative to InAs, InGaAs;

- achieving the potential use of this provide the Etchant in nanotechnology for the separation of ultra-thin layers (a few monolayers).

Technically, the result is achieved by that provide the Etchant selective layers of AlAs, AlGaAs relatively GaAs containing iodine (I2), contains an organic solvent in which is dissolved iodine (I2), and these components are taken in the following ratio, wt.%:

iodine0,1÷4
organic solvent96÷to 99.9

To provide the Etchant selective organic solvent use isopropyl alcohol or acetone.

The invention is illustrated in the following description.

Offer to provide the Etchant selective layers of AlAs, AlGaAs, including with the low content of Al, less than 40%, for carrying out etching at room temperature consists of iodine, dissolved in an organic solvent, and these ingredients are taken in the ratio, wt.%: iodine (I2) - 0,1-4; organic solvent - 96-99,9. Experimentally it was found that the etching process is possible only within the specified limits of the contents of I2in the solution. At lower contents of I2in solution, the etching process is not effective because of the low speed and at a higher - occurs adsorption of I2on the surface, and the etching process is difficult.

To determine the effect of the concentration of I2in the solution on the rate of etching was carried out the management of samples. As test samples were used heterostructures grown on GaAs substrate by molecular-beam epitaxy, which contained the following layers: the top layer of GaAs 250 Å; the middle layer Inof 0.2Ga0,8As - 80 Å; lower sacrificial layer lying on the substrate, AlAs - 80 Å. Measurements were made using a microscope STM-4. Pickling liquors were prepared in accordance with the declared contents of the ingredients, as an organic solvent was used isopropyl alcohol. The temperature of the etching solution - room. The speed of lateral etching of AlAs was 0, 657, 0,86 and 0.74 μm/min, respectively, when the contents of I2isopropyl alcohol, wt.%: 0,5; 1,5; 4.

To determine the effect of the used solvent on the rate of etching was performed etching data heterostructures in isopropyl alcohol with the contents of I2,equal to 1.5 wt.%, and in acetone with the same content I2. Moreover, the speed of lateral etching of the AlAs thickness of 80 Å was for the case when the solvent was isopropyl alcohol, 0.86 micron/min, and for the case when the solvent was used acetone, is 1.23 μm/min

To estimate the selectivity of etching the samples of GaAs, InAs, InGaAs were half covered with a chemical-resistant varnish and placed in the solution for tra the population with the contents of the ingredients, wt.%: I2- 1, isopropyl alcohol - the rest. The samples in the solution is kept for 90 days. To maintain a constant concentration of I2isopropyl alcohol to provide the Etchant 2/3 daily updated, with the container in which were the test samples was sealed. After 90 days the samples were removed from the provide the Etchant and rinsed in isopropyl alcohol, chemical-resistant lacquer surface samples removed in acetone. Then was fulfilled the control surface condition on the interference microscope MIA-U with a resolution of 0.05 µm. On the border of the etching changes are not detected, at least 0.1 μm. The sample surface was also investigated by atomic force microscope type "Solver". The boundaries between the surfaces subjected to etching and protected, not detected. This allows to speak about the selectivity of the etching of the layers of AlAs, AlGaAs relative to GaAs, InAs, InGaAs above 109which is presumably connected with the passivation of the surfaces of GaAs, InAs, InGaAs at room temperature I2.

To determine whether the etching of AlGaAs with a low content of Al, less than 40%, performed experiments on the etching heterostructures grown on GaAs substrate by molecular-beam epitaxy, which contained the top layer of GaAs is 100 Å and a layer lying on the substrate, AlxGa1-xAs with the=0,3. While monitoring the condition of the surface was performed on the microscope STM-4. After etching solution with content, wt.%: I2- 1, the rest of the acetone, the upper GaAs layer was separated. The speed of lateral etching in this case was of 0.32 μm/min

The analysis of the data suggests that high selectivity, more than 10, the etching of the layers of AlAs, AlGaAs is due to the fact that the proposed provide the Etchant at room temperature no poison GaAs, InAs, InGaAs connection, but only passivates the surface.

As information confirming the possibility of carrying out the invention with the achievement of the technical result, we give the following examples of tested compounds provide the Etchant selective layers of AlAs, AlGaAs.

Example 1.

Provide the Etchant selective with the content of ingredients, wt.%: I2- 1, the rest of acetone, provides at room temperature, the selectivity of etching of the layers of AlAs, AlGaAs, including with the low content of Al, less than 40%, relative to GaAs, InAs, InGaAs, equal to more than 109and giving an opportunity of application of this provide the Etchant in nanotechnology, because, when heterostructure containing top layer of GaAs with a thickness of 250 Åmiddle layer Inof 0.2Ga0,8As - of a thickness of 80 Å, the lower sacrificial layer lying on a GaAs substrate, AlAs thickness of 80 Åon the connecting layer is 330 Å .

Example 2.

Provide the Etchant selective with the content of ingredients, wt.%: I2- 0.1, the rest of isopropyl alcohol, provides at room temperature, the selectivity of etching of the layers of AlAs, AlGaAs, including with the low content of Al, less than 40%, relative to GaAs, InAs, InGaAs, equal to more than 109and giving an opportunity of application of this provide the Etchant in nanotechnology, because, when heterostructure containing top layer of GaAs with a thickness of 250 Åmiddle layer Inof 0.2Ga0,8As - of a thickness of 80 Å, the lower sacrificial layer lying on a GaAs substrate, AlAs thickness of 80 Ådetachable layer is 330 Å.

Example 3.

Provide the Etchant selective with the content of ingredients, wt.%: I2- 4, the rest of isopropyl alcohol, provides at room temperature, the selectivity of etching of the layers of AlAs, AlGaAs, including with the low content of Al, less than 40%, relative to GaAs, InAs, InGaAs, equal to more than 109and giving an opportunity of application of this provide the Etchant in nanotechnology, because, when heterostructure containing top layer of GaAs with a thickness of 250 Åmiddle layer Inof 0.2Ga0,8As - of a thickness of 80 Å, the lower sacrificial layer lying on a GaAs substrate, AlAs thickness of 80 Ådetachable layer is 330 Å.

Thus, the advantages of the proposed selective provide the Etchant layer is AlAs, AlGaAs before the existing analogues are that it can be effectively used in the etching of these layers, including AlGaAs with a low content of Al, less than 40%, relative to GaAs, InAs, InGaAs under conditions when its temperature is equal to room temperature and requires no additional hardware.

It should be noted that the benefits derived from the use of this provide the Etchant, it is extremely important for its use in nanotechnology, for example, in the manufacture of nanotubes, rings, rods, Gavrilovic. Also the use of the claimed provide the Etchant opens the possibility of using non-oxidized AlGaAs as sacrificial layers, expanding database of used materials and technological capabilities.

1. Provide the Etchant selective layers of AlAs, AlGaAs relatively GaAs containing iodine (I2), characterized in that it contains an organic solvent in which is dissolved iodine (I2), and these components are taken in the following ratio, wt.%:

Iodine0,1÷4
Organic solvent96÷99,9.

2. Selective provide the Etchant according to claim 1, characterized in that the organic solvent used isopropyl alcohol or acetone.



 

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