Pressure control above semiconductor wafer for plasma confinement

FIELD: process equipment for manufacturing semiconductor devices.

SUBSTANCE: plasma treatment chamber 200 affording improvement in procedures of pressure control above semiconductor wafer 206 is, essentially, vacuum chamber 212, 214, 216 communicating with plasma exciting and holding device. Part of this device is etching-gas source 250 and outlet channel 260. Boundaries of area above semiconductor wafer are controlled by limiting ring. Pressure above semiconductor wafer depends on pressure drop within limiting ring. The latter is part of above-the-wafer pressure controller that provides for controlling more than 100% of pressure control area above semiconductor wafer. Such pressure controller can be made in the form of three adjustable limiting rings 230, 232, 234 and limiting unit 236 on holder 240 that can be used to control pressure above semiconductor wafer.

EFFECT: enhanced reliability of pressure control procedure.

15 cl, 13 dwg

 

The invention relates to equipment for manufacturing semiconductor devices. In particular, the present invention relates to improved methods of localization and regulation of the pressure of the plasma in the plasma processing chambers.

In the manufacture of semiconductor devices (for example, integrated circuits or flat panel displays) layers of material may be deposited on the surface of the substrate (e.g., semiconductor wafer or glass panel) and subsequent etching. As is known to experts in the art, the etching of the deposited layer(s) may be carried out by different methods, including plasmodiophoraceae etching. Plasmodiophoraceae the etching of the deposited layer(s) on the substrate is performed in the plasma chamber. During etching region deposited on the substrate layer(s), unprotected by the mask are exposed to the plasma, and the desired pattern remains under the mask.

Among the various types of plasma etching systems a high degree of compliance with the requirements of efficient production and/or formation of the constantly decreasing topological dimensions of elements on a substrate demonstrated the system using the localization of the plasma in the space directly above the substrate. An example is the aka system can be found in the passed in General use U.S. patent No. 5534751, used here as a reference. Despite the fact that the localization of the plasma has been a significant increase in performance of plasma processing systems, the possibilities for improvement of the existing options are not exhausted. Promising from this point of view directions, in particular, are considered to be the regulation of the pressure localized plasma and access means for transporting the substrate in the space plasma processing.

To discuss the problem in detail please refer to figa, which presents a typical plasma chamber 100 with restrictive rings 102 of the current design. In the plasma chamber 100 and the substrate 106 is placed on the lower electrode 104. The lower electrode 104 is supplied with a corresponding capture mechanism of the substrate (for example, electrostatic or mechanical type)for attachment of the substrate 106. In the upper part of the reactor 110 is placed the upper electrode 112 which is mounted directly opposite the lower electrode 104. The upper electrode 112, the lower electrode 104 and the restrictive ring 102 define the boundaries of the region of localization of the plasma 116. The gas is in the region of localization of the plasma 116 source gas provide the Etchant 114. Pumping gas from the region of localization of the plasma 116 through the restrictive ring 102 and the outlet channel 120 vacuum is the ASAS. When napusteni gas and bringing the pressure in the area of localization of the plasma to the appropriate value to the lower grounded electrode in the upper electrode 112 from the source 108 is supplied RF power, and as a result, in this region localization formed plasma. On the other hand, as is well known to specialists in this field of technology, plasma can be formed while applying RF power to both the electrode to the lower electrode 104 and the upper electrode 112 or by grounding the lower electrode 104 and supplying RF power to the upper electrode 112.

Restrictive ring 102 serve as containment of plasma in space 106, and for regulating the pressure of the plasma. The effectiveness of the localization of the plasma space 116 is determined by many factors, including the gap between restrictive rings 102, the pressure in the space outside of the bounding rings and plasma, the type and speed of gas flow, as well as the level and frequency of RF power. For effective localization of the plasma pressure outside of the bounding rings 102 should be as low as possible, in the preferred embodiment, below 30 mtorr. Localization of the plasma contributes to reducing the gap between restrictive rings 102. Required for localization of the gap, as a rule, is 0.15 inches or less. However, the gap between restrictive Kohl is AMI also determines the pressure of the plasma. Therefore, it is desirable to enable regulation of the magnitude of this gap in order to achieve the pressure required to optimize performance of the process when the plasma confinement.

As a reference consider passed into General use U.S. patent No. 6019060 called "Cam mechanism for positioning the bounding rings in the chamber plasma processing", issued February 1, 2000, the applicant is Eric H. Lenz. The applicant proposes to assume that the pressure drop in the bounding circles is approximately proportional to the expression 1/(X2+Y2+Z2), where X, Y and Z distances between restrictive rings, as shown in figv. In the invention Lenz the plasma chamber is provided with a single movable ring and one stationary ring (X=constant, Y+Z=constant on figv). Regulation of the distances Y and Z by moving only the rolling restrictive ring, according to Lenz, allows to receive the control pressure plasma. Figure 2 presents graphs of the relative pressure when moving one ring, calculated using the expression above, for various given values of gap X. This expression, as shown in figure 2, allows to make an assumption about the possibility of getting 67-100% of the region R is the regulation, while the results of the experiments indicate that reality approximately half the values. In many cases, to obtain optimal results on different types of films and different devices in the same processing system requires a broader range of plasma pressure.

You should also add that in the method proposed by Lenz, restrictive ring 102 is installed between the upper and lower electrode assemblies and therefore can restrict access to the interelectrode gap during loading and unloading of substrates. As shown in figs, even when raised to its highest position restraining ring 102 access to the interelectrode gap is limited by the gap W, the value of which is determined by the difference between the full height of the interelectrode gap and the total thickness of the restrictive ring.

Therefore, the aim of the invention is to ensure the increased regulatory pressure while maintaining containment of the plasma. Another aim of the invention should be the establishment of restrictive rings, capable of greater to facilitate the operation of placing and retrieving the substrate from the plasma processing system.

Summary of the invention

To achieve these and other purposes in accordance with the present invention is proposed in trojstvo plasma treatment. Features vacuum chamber with an outlet channel and a vacuum pump connected to the vacuum chamber, and a gas source connected to the vacuum chamber. Inside the vacuum chamber has a pressure regulator on a semiconductor wafer, providing more than 500% of the area of the pressure control over a semiconductor wafer.

In addition, the present invention proposes a method of pressure regulation over a semiconductor wafer. Typically, the substrate is placed in a vacuum chamber. The vacuum chamber is equipped with a gas source. Gas is also pumped from the vacuum chamber. To ensure more than 500% of the area of the pressure control over a semiconductor wafer at least one ring do the moving.

These and other features of the present invention are discussed in detail in the following detailed description of the invention with reference to the accompanying drawings.

Brief description of drawings

The invention is illustrated in the accompanying drawings, which are purely for illustration purposes and on which the same elements are denoted by the same positions.

Figure 1 - schematic representation of the prototype chamber plasma processing.

Figure 2 - graph of relative pressure achieved in the prototype.

Figure 3 is a schematic representation to which measures plasma processing in accordance with one example embodiment of the invention.

4 is a diagram of a sequence of operations in the preferred embodiment of the invention.

5 is a schematic section of a plasma processing chamber, shown in figure 3, when the top position of the restrictive ring.

6 is a schematic illustration of a plasma processing chamber, shown in figure 5, when omitted restrictive rings.

7 is a schematic representation of a plasma processing chamber, shown in Fig.6, with a minimum value of magnitude lower gap obtained by further lowering restrictive rings.

Fig is a schematic representation of a plasma processing chamber, shown in Fig.7, with a minimum value of the average gap obtained by further lowering restrictive rings.

Fig.9 is a schematic representation of a plasma processing chamber shown in Fig, with a minimum value of the upper gap obtained by further lowering restrictive rings.

Figure 10 - graphs of pressure dependence of the total size of the gap.

11 - graphs of pressure dependence of the total size of the gap for different values of the minimum gap.

Fig is a schematic representation of a plasma processing chamber in accordance with the second embodiment, izobreteny is.

Fig - schematic representation of part of the plasma processing chamber in accordance with a third example embodiment of the invention.

A detailed description of the preferred embodiments

Below is a detailed description of the present invention with reference to several preferred embodiments illustrated on the accompanying drawings. The purpose of presenting numerous specific details the following description is to provide a full understanding of the present invention. However, the specialist in the art it is obvious that the present invention may be practiced without some or all of these specific details. In other instances, detailed descriptions of well-known operations and/or structures are omitted in order to prevent difficulties in the identification of the subject of the present invention.

To facilitate detailed discussion of the problem consider the figure 3 cross section of the plasma processing chamber 200. The camera has an upper portion 212 and the lower portion 214, as well as the chamber wall 216 extending from the upper portion 212 to the lower part 214. With the formation of the suspended frame in the camera with one hand placed cover the lower electrode 218, which is installed inside the grip 204, which podarkticules on which the etching process places the I pad 206. The action of the gripper 204 can be based on any suitable principle of capture, such as electrostatic, mechanical, vacuum or the like To capture 204 may be connected to a source of RF power 252. The upper part of the reactor 212 supports the upper electrode 224 and may be connected to a source of RF. In the processing chamber 200 has a localization mechanism, includes a first adjustable restrictive ring 230, a second adjustable restrictive ring 232, the third adjustable restrictive ring 234 and restrictive block 236. To support the first regulated restrictive ring 230, a second adjustable restrictive ring 232, the third adjustable restrictive ring 234 and the bounding box 236 can be used holder 240. Coupled with the holder 240, the controller 242 controls the movement of the holder 240 and, therefore, the first regulated restrictive ring 230, a second adjustable restrictive ring 232, the third adjustable restrictive ring 234 and the bounding box 236. In the preferred embodiment of the invention the holder 240 performs the step of moving together with the restrictive ring or block with stop after each step. It is a step moving allows to set the maximum gap between the limiter is diversified rings and block which in the preferred embodiment of the invention is from 0.09 to 0.15 inches (2,28-3,81 mm). All of the ring - the first adjustable restrictive ring 230, a second adjustable restrictive ring 232 and the third adjustable restrictive ring 234 is supplied with spacers 238 sets the minimum gap between each of the bounding ring and block. In this embodiment, the spacer has a size that provides a minimum clearance between 0.005 and to 0.060 inch (0,13-1.52 mm). The gas in the chamber comes from a source gas provide the Etchant 250. The pressure sensor 262 detects the pressure in the space above the substrate 206, i.e., the pressure above the semiconductor wafer. The camera 200 has the outlet channel 260.

In the process chamber of a plasma processing corresponding to the considered example implementation, the controller 242 raises the holder 240 in the upper position, as shown in figure 3 and closeup of figure 5. When this first adjustable restrictive ring 230, a second adjustable restrictive ring 232, the third adjustable restrictive ring 234 and the bounding box 236 rise to such a height, at which the gap between the bottom side of the first separation ring 230 and the plane of the gripper 204 reaches a minimum value sufficient to allow placement of the substrate 206 to hold the Les 206 with the help of a robot. In the preferred embodiment, this gap is about 0.5 inch (12 mm).

Figure 4 shows the sequence of operations in the preferred embodiment of the invention. In operation, the holder raises the first adjustable restrictive ring 230, a second adjustable restrictive ring 232, the third adjustable restrictive ring 234 and restrictive block 236 in the position shown in figure 5 (operation 302). For placement of the substrate 206 on the grip 204 can be used robotic mechanism (operation 304). Next, the controller 242 lowers the holder 240 to the starting point of the pressure control over a semiconductor wafer (operation 306). The starting point of the pressure control over a semiconductor wafer may be the position of the first adjustable restrictive ring 230, a second adjustable restrictive ring 232, the third adjustable restrictive ring 234 and the bounding box 236, allowing to minimize the pressure drop while maintaining a sufficient localization in the process. In this embodiment, the start point of the pressure control over a semiconductor wafer can serve as a position in which the first adjustable restrictive ring 230 reaches the casing of the lower electrode 21, as shown in Fig.6. Then begins nappanee gas provide the Etchant (operation 308), and the pressure in the space above the semiconductor wafer, as measured by the pressure sensor 252, compared to the desired set value (operation 310). If the pressure is above a semiconductor wafer must be increased (operation 312), the controller 242 can be omitted holder 240 below (operation 316). Shown in Fig.7. the camera holder 200 240 is lowered to the point at which the second separation ring 232 rests on spacers 238 of the first restrictive ring 230. In the camera 200, presented at Fig, the holder 240 is omitted even lower and is at the point in which the third restrictive ring 234 rests on spacers 238 of the second bounding ring 232. Figure 9 shows the camera 200 with holder 240, descended into the point at which the bounding box 236 rests on spacers 238 of the third restrictive ring 234. This is the bottom position of the pressure control over a semiconductor wafer, and below the holder 240 does not fall.

If the pressure is above a semiconductor wafer must be reduced, the controller 242 can raise the holder 240 (operation 314). The holder 240 can achieve the top position of the pressure control over a semiconductor wafer, as shown in Fig.6. Earlier in the regulatory process pressure to the I above the semiconductor wafer holder 240 is not raised. As soon as the pressure above the semiconductor wafer becomes equal to the desired specified value, excited by plasma (operation 318). The pressure above the semiconductor wafer is again compared with the predetermined value (operation 320), and the position of the restrictive ring regulate the raising or lowering of the holder 240 (operation 322, 324, 326) in order to achieve and maintain the desired pressure until a decision on the completion of the plasma treatment process (operation 330), then the holder 240 is raised to its highest position (operation 332) and a robotic mechanism for removing the substrate from the chamber (operation 334), thereby providing the possibility of repeating the process.

In the preferred embodiment, the range of change of the pressure drop in a restrictive rings when lowering holder 240 from the top position of the control shown in Fig.6, the lowest position of the control shown in figure 9, may be 300-800%. Regulation of the pressure drop is provided by the lifting of the holder when it is necessary to increase the pressure above the semiconductor plate and the lowering of the holder when it is necessary to decrease pressure. As shown in Fig.9, the bounding box 236 has a sufficiently large thickness, and the upper part of the bounding box 236 is you who e the lower part of the upper electrode 224, to prevent the excitation region over a semiconductor wafer by the gas flow over the upper part of this bounding box 236.

As for the dimensions used in this example implementation, the gap between the bounding box 236 and the upper electrode 224, which is surrounded by a bounding box 236, may be of 0.0125 to 0,0500 inch (0,32÷1.27 mm). In the preferred embodiment, this gap is approximately of 0.025 inch (0.63 mm respectively). The thickness of the first, second and third adjustable restrictive rings 230, 232, 234 may be from 0,045 to 0,180 inch (1,14÷4,57 mm). In the preferred embodiment, this thickness is approximately 0.09 inch (2,29 mm). The distance between the upper electrode 224 and the lower electrode 204 may be from 0.4 to 3.0 inch (10÷76.2 mm). In the preferred embodiment, this distance is equal to approximately 0.6 inch (15 mm).

Figure 10 presents a plot of the pressure over the semiconductor wafer from the total size of the gap between the first adjustable stop ring 230 and the second adjustable stop ring 232, the second adjustable stop ring 232 and the third adjustable stop ring 234, and a third adjustable stop ring 234 and the bounding box 236 inches. In this example, the pressure change is ALOS in the stream of argon, supplied into the chamber 200 with a speed of 300 cubic centimeters per minute (cm3/min) under standard conditions. Dots square shape 902 presents the pressure over a semiconductor wafer, which is the pressure inside the bounding rings. The points of the diamond shape 904 presents the pressure in the chamber 200. Plot (I) corresponds to the movement of the restrictive ring from the position shown in Fig.6, in the position shown in Fig.7. Section (II) corresponds to the movement of the restrictive ring from the position shown in Fig.7, in the position shown in Fig. Section (III) corresponds to the movement of the bounding ring from the position shown Fig, in the position shown in Fig.9.

Figure 11 shows graphs of the pressure over the semiconductor wafer from the total size of the gap in inches for different values of the minimum gap defined by the spacers 238 corresponding to the parts (II) and (III) the graph shown in figure 10. Curve (a) a minimum clearance value determined by the spacers 238 is 0.007 inch between the first (230) and second (232) adjustable restrictive rings and 0.007 inch between the second (232) and third (234) adjustable restrictive rings. The curve (b) a minimum clearance value determined by the spacers 238 is being 0.030 inch between the first 23 and second 232 adjustable restrictive rings and 0.007 inch between the second 232 and 234 third adjustable restrictive rings. Curve (C) a minimum clearance value determined by the spacers 238, is 0.038 inches between the first 230 and second 232 adjustable restrictive rings and 0,030 inch between the second 232 and 234 third adjustable restrictive rings. Curve (d) a minimum clearance value determined by the spacers 238, is 0.038 inches between the first 230 and second 232 adjustable restrictive rings and of 0.038 inches between the second 232 and 234 third adjustable restrictive rings. Curve (e) a minimum clearance value determined by the spacers 238 is 0,062 inches between the first 230 and second 232 adjustable restrictive rings and 0,062 inch between the second 232 and 234 third adjustable restrictive rings. Graphics figure 11 shows that the area of regulation of the pressure and the slope of the curves pressure can be changed by using different spacers 236, providing change the minimum gap value.

The holder may be any device that provides one or more controllers, the capability of raising and lowering restrictive rings and restrictive blocks, and in the raised position, the holder supports the maximum value of the gap between the restrictive rings and the bounding box, and in a lowered position holder poses which enables you to obtain the minimum clearances between restrictive rings and the bounding box. In a preferred embodiment, the holder allows you to zoom in every time the value of one gap before reaching the minimum. And after reaching this minimum is to decrease the value of another gap. In the presented figure 5 embodiment, the holder 240 is made in the form of a suspension, as it is located below the controller 242. In another embodiment, the holder 240 may be located above the controller 242 and a platform.

Although in the preferred embodiment, these three bounding ring and the bounding box, the number of restrictive rings and blocks may be different. In the preferred embodiment is used, the number of restrictive rings and the gap between the restrictive rings and the bounding box is such that in the upper position at least part of the lower bounding ring is located above the lowest part of the upper electrode, and the position of the beginning of the pressure control over a semiconductor plate of the lower bounding the ring rests on the surface lying in the same plane with the bottom electrode, and a restrictive ring and part of the bounding box are located below the upper electrode. This design prevents Vozniknovenie the e point of the deceleration of the flow, which can cause precipitation in the form of polymer films.

In another embodiment, the holder can have a lot of pendants, one for each of the restrictive ring. On Fig presents the plots of the first adjustable restrictive ring 1204, the second adjustable restrictive ring 1208, the third adjustable restrictive ring 1212 and the bounding box 1216. The first suspension 1220 hangs from the controller 1224. The bounding box 1216 hangs on the first suspension 1224. The second suspension 1228, the third suspension 1232 and the fourth suspension 1236 hang on restrictive block 1216. The second suspension 1228 supports third adjustable restrictive ring 1212. The third pendant 1232 supports the second adjustable restrictive ring 1208. Fourth suspension 1236 supports the first adjustable restrictive ring 1204. Second, third and fourth suspension allow you to stop moving first, second and third adjustable restrictive rings when reaching their lowest point, as described in the previous example.

In the third example implementation of the restrictive ring may have a complex profile. On Fig shows the plots of the first adjustable restrictive ring 1330, the second adjustable restrictive to what ICA 1332, the third adjustable restrictive ring 1334 and the bounding box 1336. Holder 1340 may be used to support the first regulated restrictive ring 1330, the second adjustable restrictive ring 1332, the third adjustable restrictive ring 1334 and the bounding box 1336. The controller 1342 connected to the holder 1340, controls the movement of the holder 1340 and, therefore, the first regulated restrictive ring 1330, the second adjustable restrictive ring 1332, the third adjustable restrictive ring 1334 and the bounding box 1336. Holder 1340 performs step movement together with the restrictive ring or block with stop after each step. It is a step movement defines the maximum gap between the restrictive ring and block. The first adjustable restrictive ring 1330, the second adjustable restrictive ring 1332, and third adjustable restrictive ring provided with spacers 1338 sets the minimum gap between adjacent bounding rings. The mating surfaces bounding rings 1330, 1332, 1334 and the bounding box 1336 are not flat, but have a "profile"that amount of clearance form "opaque gaps", i.e. the gaps are not in line-of-sight. Uh what about the allows you to minimize the flow of charged particles from the plasma into the space, outside the bounding rings through the gaps and can help to improve the localization of the plasma. On Fig presents an example implementation of such a "profile", forming S-shaped section 1344 on each mating surface, the height of which exceeds half the maximum clearance. The offset of the S-shaped section on each mating surface in the radial direction provides the opportunity to approach each mating surfaces with the following mating surface.

Above the present invention is described in several preferred embodiments, however, in the above description can be made various changes, rearrangements and equivalent replacement is not beyond the scope of this invention. It should also be noted that there are many alternative ways of implementing the methods and devices, which are the objects of the present invention. This implies the interpretation of the following claims including all such alterations, permutations, and equivalent substitutions that do not fall within the essence and scope of the present invention.

1. Device for regulating the pressure containing a vacuum chamber, an exhaust channel connected to the vacuum chamber, a gas source connected to the vacuum chamber, and the pressure regulator is a hell of a semiconductor wafer, which contains the first adjustable restrictive ring installed in the vacuum chamber, the second adjustable restrictive ring installed in a vacuum chamber, an adjustable restrictive unit, installed in a vacuum chamber, and a controller for lifting and lowering the first restrictive ring, the second separation ring and the bounding box.

2. The device according to claim 1, characterized in that the pressure regulator on a semiconductor wafer includes at least one holder, connecting the controller with the first adjustable stop ring, a second adjustable stop ring and an adjustable stop block.

3. The device according to claim 2, characterized in that at least one holder moves first adjustable restrictive ring, the second adjustable restrictive ring and adjustable bounding box.

4. The device according to claim 2 or 3, characterized in that it contains also the upper electrode, and at least one holder is able to move at least part of the first adjustable spacing rings of the second adjustable bounding ring and adjustable bounding box in position above the bottom surface of the upper electrode.

5. Device according to any one of claim 2 to 4, characterized in that mo is at least one holder is able to move the first adjustable restrictive ring in position, when it first adjustable restrictive ring rests on the surface lying in the same plane or below the plane of the substrate.

6. Device according to any one of claims 1 to 5, characterized in that it also contains a spacer installed between the first adjustable stop ring and the second adjustable stop ring.

7. Device according to any one of claim 2 to 6, characterized in that at least one holder is able to move the second adjustable restrictive ring from the position at which the second adjustable restrictive ring removed from the first separation ring with the formation of the gap maximum value in a position in which the second adjustable restrictive ring rests on the first adjustable restrictive ring via a spacer.

8. Device according to any one of claims 1 to 7, characterized in that the pressure regulator on the semiconductor wafer also includes a third adjustable restrictive ring placed between the second adjustable stop ring and an adjustable stop block and connected to the holder.

9. Device for regulating the pressure containing a vacuum chamber, an exhaust channel connected to the vacuum chamber, a gas source connected to the vacuum chamber, and the pressure regulator on technology is dikovoj plate, which contains at least one ring remote from the adjacent parts with the formation of gaps, and a controller for moving at least one ring, carried out with the aim of reducing the magnitude of these gaps.

10. The method of regulating the pressure over a semiconductor wafer, containing the operations of placing the substrate in a vacuum chamber, connecting a gas source to a vacuum chamber, pumping gas from the vacuum chamber, and moving at least one ring with the aim of achieving more than 100% regulatory pressure over a semiconductor wafer.

11. The method according to claim 10, characterized in that the operation of moving at least one ring contains steps: lowering the first adjustable spacing rings of the second adjustable bounding ring and the bounding box to the starting point of the pressure control over a semiconductor wafer, in which the first adjustable restrictive ring rests on the lower part of the vacuum chamber, the second adjustable restrictive ring removed from the first regulated restrictive ring on the maximum distance separating the first adjustable restrictive ring from the second adjustable spacing rings and the bounding box is removed from the second adjustable restrictor is th ring on the maximum distance, separating the second adjustable restrictive ring from the bounding box; and lowering the second adjustable bounding ring and the bounding box in a position in which the second adjustable restrictive ring rests on the first adjustable restrictive ring and separated from the first regulated restrictive ring spacer, and the bounding box is removed from the second adjustable restrictive ring on the maximum distance separating the second adjustable restrictive ring from the bounding box.

12. The method according to claim 11, characterized in that the operation of moving at least one ring contains also the stage of the lowering of the bounding box in a position in which this restrictive block based on the second adjustable restrictive ring.

13. The method according to claim 11, characterized in that when lowering the first adjustable spacing rings of the second adjustable bounding ring and the bounding box lower third adjustable restrictive ring in position between the second adjustable stop ring and the bounding box, which is the third adjustable restrictive ring is removed from the second adjustable restrictive ring on the maximum distance that separates t is Etie adjustable restrictive ring from the second adjustable spacing rings and the bounding box is removed from the third adjustable restrictive ring on the maximum distance separating the third adjustable restrictive ring from the bounding box, and when lowering the second adjustable bounding ring and the bounding box lower third adjustable restrictive ring in a position in which it is the third adjustable restrictive ring removed from the bounding box on the maximum distance separating the third adjustable restrictive ring from the bounding box, and removed from the second adjustable restrictive ring on the maximum distance separating the third adjustable restrictive ring from the second adjustable restrictive ring.

14. The method according to claim 11, characterized in that the operation of moving at least one ring contains a step of lowering the third adjustable bounding ring and the bounding box in a position in which it is the third adjustable restrictive ring rests on the second adjustable restrictive ring and separated from the second adjustable restrictive ring spacer, and the bounding box is removed from the third adjustable restrictive ring on the maximum distance separating the third adjustable Ogre is socialnoe ring from the bounding box.

15. The method according to 14, characterized in that the operation of moving at least one ring contains also the stage of the lowering of the bounding box to the position at which the bounding box is based on the third adjustable restrictive ring.



 

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