Ferro-electric memory contour and method for manufacturing the latter

FIELD: electric engineering.

SUBSTANCE: device has ferroelectric memory cell in form of thin ferroelectric polymer film, two electrodes, while at least one of said electrodes has at least one contact layer, which has conductive polymer in contact with memory cell, and if necessary has second layer in from of metallic film in contact with conductive polymer. Method for manufacturing ferroelectric memory contour includes operations for applying on substrate of first contact layer in from of thin film of conductive polymer and applying thin ferroelectric polymer film on first contact layer and second contact layer on thin ferroelectric polymer film.

EFFECT: increased polarization level of ferro-electric memory cell and decreased field strength.

2 cl, 12 dwg, 3 ex

 

The technical field to which the invention relates.

The present invention relates to a ferroelectric memory circuit containing a ferroelectric memory cell in the form of a thin ferroelectric polymer film with the first and second electrodes in contact with the ferroelectric film of the memory cell at its opposite sides, and the polarization state of the cell can be set, switched and detected by application to the electrodes of the respective voltages. The invention relates also to a method of manufacturing a ferroelectric memory circuit of this type, according to which the memory circuit is formed on an insulating substrate.

The present invention relates to processes of making polarization and polarization switching is applied to ferroelectric thin polymer film in the storage circuits. A similar circuit is used to build a bistable ferroelectric memory devices.

More specifically, the present invention is aimed at improving the technical characteristics of thin and ultrathin ferroelectric polymer films based on poly(vinylidenefluoride-triptorelin) in the circuit of the type described, in which under the action of the electric field is switched memory cells, SFOR is new in a thin film, between the two polarization States.

The level of technology

In the prior art it is known that thin (with a thickness of 0.1-1 µm) and ultrathin (thickness less than 0.1 μm) of the ferroelectric film can be used as a bistable storage devices. The use of ferroelectric polymer in the form of a thin film allows you to create a fully integrated device, in which the switching polarization can occur at low voltages. However, the study of the dependence of the polarization characteristics of the thickness of the film for a ferroelectric polymer, which was widely used in the known devices, namely poly(vinylidenefluoride-triptorelin) (PVDF-Trfe) shows that with decreasing thickness decreases and the decrease value of the residual polarization of PR(see figure 5) and the increased value nepriklausau polarization. There has been a sharp fall in the value of polarization, when the film thickness becomes less than 100 microns.

In polymer films of PVDF-Trfe polarization characteristics depend directly on the degree of crystallinity and crystallite size. It is assumed that with respect to thin films of hard metal substrate, which is usually by centrifuging layer is applied, may Engibarov the ü the process of crystallization. This is because the substrate has an influence on the process of heterogeneous nucleation of crystals, which determines the orientation of the crystallites. In the neighboring crystallites can have a significant misalignment orientation, thus forming a boundary layer between a metal substrate and a thin film. On the other hand, new experimental results may indicate that a high degree of crystallinity can be obtained even when using a metal substrate. Thus, the true mechanism of the considered process is currently unclear. The boundary layer has a thickness, which accounts for a significant fraction of the thickness of a thin film, which reduces the degree of polarizability and more intense coercive field. Due to the presence of this boundary layer of a thin film ferroelectric polymer in contact with a metal layer, characterized by a lower value of the residual polarization of PRand great value nepriklausomo fieldcompared to the isolated polymer.

Disclosure of inventions

Therefore the main task to be solved by the present invention is directed, is the weakening of the described disadvantages of known production technology is possible ferroelectric storage circuits. The specific problem solved by the invention is to improve the polarization properties and switch to the ferroelectric storage circuits with thin ferroelectric polymer films as storage material.

The solution of these problems and achieve other advantages are provided by the creation of a ferroelectric memory circuit according to the invention, which is characterized by the fact that at least one of the electrodes contains: a contact layer containing a conductive polymer in contact with the memory cell, or a combination of a contact layer with a conductive polymer that is in contact with the memory cell, and a layer of metal film in contact with the contact layer.

In a preferred embodiment, ferroelectric memory circuit according to the invention one of the electrodes contains only a contact layer of a conductive polymer, and the other electrode contains a combination of a contact layer with a conductive polymer layer in the form of a metallic film.

Thin ferroelectric polymer film preferably has a thickness of 1 μm or less, while the conductive polymer layer has a thickness of 20-100 μm.

In addition, in the preferred embodiment, the ferroelectric memory cell with the contains, at least one polymer selected from the following groups of polymers: poly (vinylidene fluoride) (PVDF), polyvinylidene with any of its copolymers, terpolymer on the basis of these copolymers or PVDF-triptoreline (PVDF-Trfe), nylone with an odd number of the brand (i.e. with an odd number of carbon atoms in the main source Monomeric link), nylone with an odd number of marks with any of their copolymers, cinepremiere and cinepremiere with any of their copolymers. In this embodiment, conductive polymer contact layer is preferably selected from the following groups of polymers: the doped polypyrrole, doped derivatives of polypyrrole, doped polyaniline, doped derivatives of polyaniline, doped polythiophene and doped derivatives polythiophenes.

In the General case, it is also preferable that the conductive polymer contact layer was selected from the following groups of polymers: the doped polypyrrole, doped derivatives of polypyrrole, doped polyaniline, doped derivatives of polyaniline, doped polythiophene and doped derivatives polythiophenes.

It is also recommended that a metal layer made of metal foil, was selected from the following group of metals: aluminum, platinum, titanium and copper.

In one of the preferred options, the ants the invention, the ferroelectric storage circuit is made with the possibility of its formation in the set of similar contours, with matrix addressing. In this embodiment, the memory cell of the memory circuit forms part of a global layer in the form of a thin ferroelectric polymer film, and the first and second electrodes form part respectively of the first and second electrode means. Both the first and second electrode means contain multiple strip electrodes, and the electrodes of the second electrode means is oriented at an angle, preferably orthogonal with respect to the electrodes of the first electrode means. Global layer in the form of a thin ferroelectric polymer film is located between the electrodes of the first and second electrode means. As a result, in thin ferroelectric polymer film in each zone crossing electrodes of the first electrode means and second electrodes of the electrode means is formed of a ferroelectric memory cell. This set of electrode means and a thin ferroelectric polymer film formed in the memory cells forms a ferroelectric memory device with passive matrix addressing. Addressing the corresponding memory cells for write operations and a read is performed on this unit by means of electrodes included in the electrode means, which are connected with the corresponding external driver control and detection circuits.

The solution of these problems and the achievement of these advantages can also create a method of manufacturing a ferroelectric memory circuit according to the present invention. This method is characterized by the fact that on a substrate or on a layer of a metallic film deposited on the substrate, causing the first contact layer in the form of a thin film of a conductive polymer, and then apply a thin ferroelectric polymer film on the first contact layer and the second contact layer on the thin ferroelectric polymer film.

Further in accordance with the invention, a thin film of a conducting polymer as a thin ferroelectric polymer film is preferably applied by centrifugation.

In one preferred embodiment of the method according to the invention the first contact layer and/or a thin ferroelectric polymer film after completion of the corresponding transaction application is subjected to annealing at a temperature of about 140-145°C.

According to another preferred variant of the method according to the invention on top of a thin ferroelectric polymer film is applied to the second contact layer in the form of a thin film of a conductive polymer. In this case, it is preferable to expose the second contact layer is annealed at a temperature of about 140-145°not about what westline annealing of thin ferroelectric polymer film before application of the second contact layer. Preferably also be applied over the second contact layer layer metal film.

Brief description of drawings

Hereinafter the invention will be described in more detail by discussing, with reference to the accompanying drawings, some preferred variants of its implementation and examples of implementation.

1 shows a ferroelectric memory cell corresponding to the level of technology.

Figa, 2b, 2c, 2d and 2E respectively illustrate first, second, third, fourth and fifth embodiments of the ferroelectric memory cell according to the present invention.

Figure 3 given a schematic representation in plan ferroelectric memory device known from the prior art, but is equipped with a storage circuits according to the invention.

Figa corresponds to the cross section of the device shown in figure 3, the plane X-X.

On fig.4b shows part of a memory circuit according to the present invention with reference to its use in the storage device 3.

Figure 5 shows, for comparison, the hysteresis curves corresponding to the storage circuit according to the present invention and a known memory circuit.

6, 7 illustrate the comparison of fatigue characteristics of memory circuit according to the present invention and known storage pin is RA.

The implementation of the invention

In the following description of various embodiments of the present invention as the starting point adopted is presented in figure 1 known memory circuit. In figure 1, where known, the path is represented in cross-section, the layer F thin ferroelectric polymer film is located between the first and second electrodes E1, E2 respectively. These electrodes are made in the form of metal films M1, M2. This is usually taken (although this condition is not required)that both electrodes used the same metal.

The first embodiment of a memory circuit according to the invention is presented on figa similar to a known circuit, presented in figure 1. However, in the lower electrode E1 metal film M1 replaced with a thin film P1 conductive polymer, while the upper electrode E2 has kept its shape electrode in the form of a metallic film.

A second embodiment of a memory circuit according to the invention presents on fig.2b. Here both electrodes E1, E2 is made in the form of thin films P1, P2 conductive polymer. In these electrodes can be used the same polymer or different conducting polymers.

On figs shows a third variant of a memory circuit according to the invention. Here the first electrode E1 contains thin the Lenk P1 conductive polymer, employee contact layer for layer F ferroelectric polymer. On a thin LM P1 conductive polymer supported metal film M1. In the result, the first electrode E1 is a composite consisting of two layers M1, P1. The second electrode E2 is similar to the electrode of the first variant, i.e. contains metal film M2 in contact with the thin ferroelectric polymer film F, which forms a storage material, i.e. a memory cell.

On fig.2d presents the fourth option memory circuit according to the invention. It differs from option on figs the fact that in it the second electrode E2 contains only a contact layer consisting of a thin film P2 conductive polymer.

Finally, on file presented to the fifth storage circuit according to the invention. Here both electrodes E1, E2 are composites formed respectively by a metal film M1, M2 and a thin film P1, P2 conductive polymer serving as a contact layer between the metal film M1, M2 and thin ferroelectric polymer film F, forming the memory cell.

As is known to experts in this field, the memory cell of known construction may be used as such in the composition of the matrix ferroelectric memory with passive addressing tippedtin figure 3. This matrix storage material, i.e. ferroelectric thin film is a single continuous ("global") layer of G. However, the passive matrix ferroelectric memory device may also include any of the options mass storage circuit presented on figa-2A.

In the latter case, the storage device also includes a thin film ferroelectric polymer (or, in other words, the thin ferroelectric polymer film), made in the form of a global layer G and used as storage material in the storage circuit C. In addition, the storage device comprises a first electrode means in the form of mutually parallel bottom strip electrodes E1, serve as the interface for the global layer G which is a thin ferroelectric polymer film. On top of the thin ferroelectric polymer film applied to the second electrode means in the form of similar electrodes E2. However, mutually parallel strip electrodes E2 are oriented at some angle to the electrodes E1 of the first electrode means, preferably orthogonal to these electrodes.

On figa storage device with passive matrix addressing by figure 3 presents the cross-section plane X-X. In the present embodiment, f is reelections storage device provided with a memory circuit in a variant, shown in figs or 2d. More specifically, the memory circuit contains a composite bottom electrode E1 of the metal film M1 and the contact layer (film) P1 of conductive polymer that serves as the interface to part of the global layer G thin ferroelectric polymer film used as a memory material in the memory cell.

In the storage device shown in figure 3 and 4A, the mutual spatial overlap of the electrode E2, part of the second electrode means, and electrode E1, part of the first electrode means, which specifies a memory location in the volume enclosed between thin ferroelectric polymer film F, as is evident from figure 3 and 4A. Thus, the memory circuit according to the invention, formed ferroelectric memory material together with the electrodes E1E2is part of a complete set of memory cells. Now, however, and the electrodes E1, E2, and the storage material to form appropriate, clearly defined part of the overall set of electrodes E1, E2 and storage of the material forming the ferroelectric memory device as a whole.

On fig.4b shows part of a memory circuit used in a ferroelectric memory device with passive matrix addressing, shown in figure 3 and 4A. In the bottom, in this case, the memory circuit corresponds to one of the options shown in figs, 2d. More specifically, while the lower electrodes E1 contains a metal film M1 and the contact layer in the form of a film P1 conductive polymer, the upper electrode E2 can be either a metal film M2 or film P2 conductive polymer. Of course, there are no obstacles for use in a memory device are presented in figure 3 and 4A, any of the options shown on figa-2A.

Next will be given a more General description of the present invention. A storage circuit according to the invention contains a thin ferroelectric polymer film on a substrate coated with a conductive polymer. In accordance with one aspect of the invention a soft conductive polymer, such as polythiophene deposited on a metallic substrate, for example, on the silicon wafer, coated with platinum or aluminum. Then on a substrate, for example, by centrifugation is applied a thin film of a ferroelectric polymer, e.g. poly(vinylidenefluoride-triptorelin) (PVDF-Trfe). The thickness of this film can be from 20 nm to 1 μm. In this case, the conductive polymer is used as the lower electrode, which replaces the commonly used metal electrodes, izgotovlen is administered, for example, such metals as Al, Pt, Au, si, etc. Assumes that caused by using the method according to the present invention, electrodes of conductive polymer to increase the crystallinity of the thin ferroelectric polymer film and thereby increase the degree of polarization, and also reduce the tension of the switching field in comparison with the corresponding thin films on metal electrodes.

Using conductive polymer as an electrode of the memory cell circuit of the present invention is to reduce the stiffness of the film (i.e. increases the crystallinity), as well as the modification of the electric barrier in the boundary layer. In the General case, the phase separation between polymers reduces the crystal area near their section. This property is used in the present invention by applying a film of a conducting polymer on a substrate for forming the lower electrode. Thin ferroelectric film and the conductive polymer film have a good separation of the phases, which reduces the non-crystalline zones in thin ferroelectric film during subsequent firing. It is assumed that due to the different mechanisms of conductivity in conductive polymers and metal barrier in the boundary layer between the electrode and the ferroelectric polymer film modifica is : thus, in ferroelectric polymer film is increased as the value of the residual polarization of PRand the speed of switching and simultaneous decrease in the value nepriklausau polarization. These changes are, indeed, observed in experiments.

Conducting polymers that can be used for carrying out the invention include (not limited to) the following materials: doped polypyrrole and its doped derivatives doped polyaniline and its doped derivatives as well as doped polythiophene and its doped derivatives.

Ferroelectric polymers, which can be used for carrying out the invention include (not limited to) the following substances: polyvinylidene fluoride (PVDF) and its copolymers with triptorelin (PVDF-Trfe), terpolymer (ternary copolymers)based on copolymers of these compounds, other ferroelectric polymers, such as nylony with an odd number, brand, or cinepremiere.

The use of polymer electrodes in accordance with the invention increases the degree of crystallinity in thin film-based copolymer PVDF-Trfe compared using the fillet metal electrode of Al, Pt, Au, Cu, etc. Analysis of the polarization hysteresis loops which shows that thin films of the copolymer PVDF-Trfe formed on the electrode of the conductive polymer, with the same intensity of applied electric fields have a higher degree of polarization than the film, equipped with a metal such as titanium electrode. This is illustrated by figure 5, which will be discussed later. Getting thin and ultra-thin ferroelectric polymer films on a flat substrate coated with a conductive polymer, is illustrated by the following examples.

Contained in this description of the variants of the invention are given only for purposes of explanation of the invention and do not make any restrictions. In other words, the examples cannot be interpreted as making any restrictions in the scope of protection of the present invention.

Example 1.

In accordance with this example as one of the electrodes in contact with the ferroelectric polymer thin film memory circuit used polymer, abbreviated denoted as PEDOT (poly(3,4-ethylenedioxythiophene)) (poly(3,4-etylene dioxythiophene)). Film PEDOT can be formed by chemical polymerization, electrochemical polymerization or deposition by centrifugation previously prepared solution containing PEDOT-PSS (where reduction of the PSS indicates on Esterel, mixed with sulphurous acid). In this case, the formation of a film PEDOT chemical method is used. The corresponding solution is a mixture of commercially available solutions Baytron M (3,4-ethylenedioxythiophene, EDOT) and Baytron C (solution toluensulfonate iron in n-butanol, 40%). The ratio between Baytron M and Baytron With standard solution mixture is 6:1. Polymerization EDOT in PEDOT becomes noticeable after about 15 min after mixing of the two solutions.

Conductive polymer PEDOT in this example, is applied by centrifugation on a metallized silicon wafer. In order to intensify the polymerization film is then placed on a hot (100° (C) tile for 1-2 minutes Then rinse solution to remove depolymerization ADOT and iron-containing solution. In this operation, the alternative can be used isopropanol or deionized water. On top of the conductive film PEDOT by centrifugation apply a thin ferroelectric film (in this example having a thickness of 80 nm), followed by an annealing operation at 140-145°C for 10 minutes On the ferroelectric film by the evaporation method is applied to the upper electrode made of titanium. In this example, the ferroelectric film is composed of a copolymer PVDF-Trfe with a ratio of 75/25 copolymer.

On is shown loop 1 hysteresis, which can be obtained for a memory circuit according to the invention. More specifically, loop 1 hysteresis obtained for thin ferroelectric polymer film prepared according to the Example 1. Used storage circuit essentially corresponds to the version presented on figa in Example 1. Conductive polymer P1, is used as the bottom electrode E1 is-PEDOT, i.e. polythiophene doped toolstolife.com iron. It is assumed that this polymer has a higher conductivity than PEDOT-PSS. The upper electrode E2 is made in the form of metal (titanium) film. Loop 1 in figure 5 is characterized by residual polarization PR1and the coercive voltage VC1. Loop 2 is a hysteresis loop for a known memory circuit C with top and bottom electrodes E1, E2, made of titanium. This contour corresponds to the values of the residual polarization of PR2and the coercive voltage VC2. As you can see when comparing the curves 1, 2 hysteresis, a storage circuit according to the invention is characterized by a hysteresis curve whose shape is closer to a perfect square shape. This nepriklausau polarizationa storage circuit according to the invention on the relatively less than the corresponding polarizationfor a known memory circuit. As a consequence, the difference between the values of switching the polarization of the P1*and nepriklausau polarizationfor circuit according to the invention is higher than the corresponding values in the known circuit. This significantly improves the appearance of read signals corresponding to the different levels of polarization. However, it should be noted that the coercive voltage VC1the memory circuit according to the invention is slightly higher, perhaps because the thickness of the thin ferroelectric polymer film was somewhat larger than expected. However, the figure 5 hysteresis curves clearly show that the use of the lower electrodes with a conductive polymer, in this case-PEDOT, significantly improves the polarizability of the ferroelectric thin polymer films used as storage material.

Example 2.

Conductive polymer, in this case polypyrrol, put on a metallized substrate (such as silicon wafer, coated with Pt or Al) using a known method according to which the substrate is dipped in the polymer solution. In accordance with this example, in order to reduce the speed n of the bearing, the substrate is dipped in a polymer solution of low concentration. In the General case, the substrate can be immersed in the polymer solution for a period of from about 3 to 30 min at room temperature. In order to obtain the desired thickness, can be used multiple dipping. In this example, the final thickness of the polypyrrole is 30 nm, although it can be selected in the range of 20 nm to about 100 nm by varying the overall length of immersion. For the described operation, it is necessary the operation of applying a layer of a conductive polymer, which by centrifugation get thin ferroelectric polymer film.

In this example, for formation of thin-film ferroelectric layer using statistical copolymers of PVDF-Trfe with a ratio of 75/25 copolymer with molar ratio WDF/The 68/32 and with average molecular masses close to 200000. The resulting film is then subjected to annealing at 100°C for 2 h and slowly cooled to room temperature.

Example 3.

Electrode layer of conductive polymer is applied on the metallic substrate (i.e. on the silicon wafer, covered with a film of platinum, titanium or aluminum), or over a thin ferroelectric polymer film by centrifugation using as the outcome of the CSO solution Baytron P. A commercially available solution of Baytron P is an aqueous solution PEDOT in the presence of PSS, which serves as a colloidal stabilizer. With regard to poor wettability of the above metal film and the ferroelectric film, to ensure the formation of a uniform and smooth film PEDOT-PSS, to a solution of Baytron P it is necessary to add a small amount of surfactant. After application of the film by centrifugation required heat treatment at 100°C for 2-10 minutes This operation can increase the conductivity PEDOT-MSS.

For dissolution of ferroelectric polymer using an appropriate solvent. The only requirement is that the solvent does not dissolve the film PEDOT-PSS or not cause its swelling at room temperature, and to prevent diffusion between the thin ferroelectric film and film PEDOT-PSS. The concentration of the ferroelectric polymer in diethylmalonate is 3%. In order to obtain a ferroelectric film thickness of 90 nm, centrifugation lead with an angular speed of 3800 rpm./minutes

On top of the ferroelectric polymer film forming the second conductive polymer layer PEDOT-PSS. On top of this second conductive layer is applied to the electrode in the form with the HHS titanium. This operation is carried out by evaporation, to form a film of titanium with a thickness of 150 nm on top of the conductive polymer. The active surface is set using the appropriate mask.

6 illustrates a comparison of fatigue characteristics when the film thickness of 60 nm and at room temperature for a memory circuit according to the invention (curves marked by black squares) and for a known memory circuit (curves marked with white circles). From comparison of the curves you can see that the memory circuit according to the invention exhibits a higher residual polarization, as well as improved fatigue characteristics. In this case, as can be seen from the comparison of the two curves PR1PR2differences in characteristics between the memory circuit according to the invention and a known memory circuit remain visible when holding more than 106cycles of the alternating voltage during fatigue testing.

Values nepriklausau polarizationto compare contours are almost identical, but after 107cycles switching polarization R*for a memory circuit according to the invention more than 7 times nepriklausau polarization for this circuit. At the same time when the same number is TBE switching cycles similar excess to known memory circuit is close to five times. Thus, the appearance of read signals in the circuit according to the invention is approximately 40% higher than in the known circuit.

The advantages of a memory circuit according to the invention become even more pronounced with increasing operating temperature up to 55°With (which is more representative of the real conditions of operation of such circuits, as can be seen from Fig.7. In the case of the known circuit of fatigue effects (manifested in the fall of switching polarization R*become noticeable already after 20000 cycles of switching. After 106cycles is the switching of polarization for a known circuit exceeds the value nepriklausau polarization only 40%. In contrast, for a memory circuit according to the invention even after the 107cycles switching polarization R*6 times nepriklausau polarization. In additional experiments it was shown that many (five-fold) excess of the value of the switching polarization compared with the corresponding value nepriklausau polarization is maintained even after the 109cycles of the supply voltage, indicating the significant advantages provided by the present invention.

It seems that the metal substrate can result in significant energy elasticity in the delicate and strategic ferroelectric films as a result of inconsistent orientations of neighboring crystallites under the influence of the metal substrate on the thin ferroelectric polymer film. This leads to a low crystallinity in ultrathin films of PVDF-Trfe. As a result, ultra-thin films of PVDF-Trfe of this type have lower residual polarization and improved polarization switching. In addition, the presence of boundary barrier between the metal electrode and the ferroelectric polymer film can be further reduced nepriklausau polarizationrelative to the residual polarization of PRthat approximates the shape of the hysteresis curve to the square.

During development of the present invention have been described ferroelectric properties of films of PVDF-Trfe with a thickness of 0.05-1 μm. Measurements were carried out, the speed of switching at different electric fields. The experimental results show that when using electrodes of conductive polymers is an increase in crystallinity and the polarizability due to the consistency of their modulus to elastic modulus ferroelectric polymer films. This is a clear proof that the electrodes of conductive polymers function properly in devices based on thin ferroelectric films. Moreover, it seems reasonable to assume that the modification of the boundary layer at the electrode - polymer leads t is the train to beneficial change in the boundary of the barrier, thereby increasing the level of polarization and the speed of switching. Most importantly, compared with the corresponding figures for thin ferroelectric polymer films with metal electrodes under the same experimental conditions is to increase the degree of polarization and tension-reducing the switching field or voltage.

1. Ferroelectric memory circuit (C)containing a ferroelectric memory cell in the form of a thin ferroelectric polymer films (F) first and second electrodes (E1E2)in contact with the ferroelectric memory cell at its opposite sides, and the polarization state of the cell can be set, switched and detected by application to the electrodes (E1E2respective voltages, wherein at least one of the electrodes (E1E2contains contact layer (P1P2containing conductive polymer, which is in contact with the memory cell, or a combination of a contact layer (P1P2with a conductive polymer that is in contact with the memory cell, and a layer (M1, M2in the form of a metal film in contact with the contact layer (P1P2).

2. A storage circuit according to claim 1, featuring the the action scene, which one of the electrodes (E1E2contains only the contact layer (P1P2with a conductive polymer, and the other electrode (E2, E1) contains a combination of a contact layer (P1P2), with the conductive polymer layer (M1, M2in the form of a metallic film.

3. A storage circuit according to claim 1, characterized in that the thin ferroelectric polymer film (F) has a thickness of 1 μm or less.

4. A storage circuit according to claim 1, characterized in that the conductive polymer layer has a thickness of 20-100 μm.

5. A storage circuit according to claim 1, characterized in that the ferroelectric memory cell contains at least one polymer selected from the following groups of polymers: poly (vinylidene fluoride) (PVDF), polyvinylidene with any of its copolymers, terpolymer on the basis of these copolymers or PVDF-triptorelin (PVDF-Trfe), nylone with an odd number stamps, nylone with an odd number of marks with any of their copolymers, cinepremiere and cinepremiere with any of their copolymers.

6. A storage circuit according to any one of claims 1 to 5, characterized in that the conductive polymer contact layer (P) selected from the following groups of polymers: the doped polypyrrole, doped derivatives of polypyrrole, doped polyaniline, doped derivatives of polyaniline, doped polythiophene and doped derivatives of adnie of polythiophenes.

7. A storage circuit according to claim 1, characterized in that the metal layer (M) in the form of a metallic film selected from the following group of metals: aluminum, platinum, titanium and copper.

8. A storage circuit according to claim 1, characterized in that made with the possibility of its formation in the set of similar circuits having a matrix addressing, the memory cell of the memory circuit (C) forms part of the global layer (G) in the form of a thin ferroelectric polymer film, and the first and second electrodes (E1E2) form part respectively of the first and second electrode means, each of which contain multiple strip electrodes (E1E2), and electrodes (E2) second electrode means is oriented at an angle, preferably orthogonal with respect to the electrodes (E1the first electrode means, and the global layer (G) in the form of a thin ferroelectric polymer film is located between the electrodes of the first and second electrode means, so that in thin ferroelectric polymer film in each zone crossing electrodes (E1the first electrode means and electrodes (E2) second electrode means is formed of a ferroelectric memory cell, the set of electrode means and a thin ferroelectric polymer film formed not in the memory cells forms a ferroelectric memory device with passive matrix addressing, in which the addressing of the respective memory cells for write operations and read by means of electrodes (E1E2)included in the electrode means, which are connected with the corresponding external driver, the managers and the detecting circuits.

9. A method of manufacturing a ferroelectric memory circuit (C)containing a ferroelectric memory cell in the form of a thin ferroelectric polymer films (F) first and second electrodes (E1E2)in contact with the memory cell at its opposite sides, and the polarization state of the cell can be set, switched and detected by application to the electrodes (E1E2respective voltages, while the memory circuit (C) is performed on the insulating substrate (S), characterized in that on a substrate or on a layer of a metallic film deposited on the substrate, causing the first contact layer in the form of a thin film of a conductive polymer, and then apply a thin ferroelectric polymer film on the first contact layer and the second contact layer on the thin ferroelectric polymer film.

10. The method according to claim 9, characterized in that a thin film of conductive polymer is applied by centrifugation.

11. The method according to claim 9, characterized in that ankou ferroelectric polymer film is applied to the first contact layer by centrifugation.

12. The method according to claim 9, characterized in that the first contact layer and/or a thin ferroelectric polymer film after completion of the corresponding transaction application is subjected to annealing at a temperature of 140-145°C.

13. The method according to claim 9, characterized in that on top of the thin ferroelectric polymer film is applied to the second contact layer in the form of a thin film conductive polymer.

14. The method according to item 13, wherein the second contact layer are annealed at a temperature of 140-145°without performing annealing of thin ferroelectric polymer film before application of the second contact layer.

15. The method according to item 13, characterized in that on top of the second contact layer is applied a layer of metal film.



 

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EFFECT: increased polarization level of ferro-electric memory cell and decreased field strength.

2 cl, 12 dwg, 3 ex

FIELD: ferroelectric or electret memorizing contour (C) .

SUBSTANCE: ferroelectric or electret memorizing contour has memory cell with ferroelectric or electret memorizing material, and two electrodes, while one of electrodes has at least one functional material, capable of physical and/or chemical incorporation of atomic or molecular particles in its volume, aforementioned particles contained in electrode or in memorizing material of memory cell.

EFFECT: increased resistance to wear: minimization of wear processes in memorizing devices, based on organic and, in particular, polymer electrets and ferroelectrics.

2 cl, 11 dwg

FIELD: engineering of devices for storing and/or processing data, based on utilization of thin ferroelectric films, in particular, engineering of ferroelectric or electret three-dimensional memorizing devices.

SUBSTANCE: device has stack of memorizing arrays, formed of two or more ribbon structures, stacked one on another or intertwined with each other, while each ribbon structure has flexible substrate of non electro-conductive material, at least one electrode layer and a layer of memorizing material.

EFFECT: expanded functional capabilities.

12 cl, 9 dwg

FIELD: engineering of devices, containing functional elements forming a planar set.

SUBSTANCE: in electrode matrix, containing first and second thin-film electrode layers L1, L2 with electrodes ε in form of stripe electric conductors in each layer, electrodes ε are separated from each other only by thin film 6 of electrically insulated material, thickness of which is a small portion of electrodes width and which passes along at least side edges of electrodes, forming isolating walls 6a between them. Electrode layers L1, L2 are subjected to planarization to provide for high level of planarity of layers. In dev, containing one or more electrode matrices EM, electrode layers L1, L2 of each matrix are mutually oriented in such a way, that their electrodes 1, 2 intersect or are positioned mutually perpendicularly. Between electrodes 1,2 in form of whole layer functional environment 3 is held, as a result of which device with matrix addressing is formed (preferably passive), which can be utilized, for example, as device for processing or storing data with matrix addressing, containing individually addressed functional elements 5, in form of logical cells or memory cells respectively. Coefficient of filling for separate layer of functional environment 3 by aforementioned cells is close to 1, while maximal number of cells in device approaches A/f2, where A - surface area of functional environment, held between electrode layers L1, L2, and f - minimal size achievable by technological means.

EFFECT: increased efficiency of addressing and increased recording density of stored data.

3 cl, 30 dwg

FIELD: technology for reading information from device with passive matrix addressing, possible use in sensor devices with individually addressed cells on basis of polarized material.

SUBSTANCE: device with passive matrix addressing of individual cells contains electrically polarized material having hysteresis, first and second sets of parallel electrodes, forming controlling buses and data buses, which in overlapping zones within volume of polarized material form cells, containing capacitor-like structures, and also has control means and detection means. Method describes process for reading data from aforementioned device.

EFFECT: prevented obstructing voltages and leak currents during destructive reading of cells, possible parallel reading of several cells.

2 cl, 4 dwg

FIELD: engineering of devices of volumetric data storage.

SUBSTANCE: device has multiple memorizing devices M with matrix addressing, each one of memorizing devices contains two electrode matrices in form of parallel electrode layers, forming controlling buses and data buses, while electrodes of each electrode matrix are made with high position density and isolated from each other by barrier layer with thickness, being a portion of electrodes thickness, while upper surface of one electrode matrix, directed to next electrode matrix, is provided by parallel grooves, directed orthogonally relatively to electrodes and spatially separated from one another by spaces, close to width of electrodes.

EFFECT: high density of data storage.

6 cl, 19 dwg

FIELD: technologies for storing data in energy-independent ferroelectric memory with variable selection.

SUBSTANCE: each method includes recording multiple identical copies of data to multiple memory zones, first controlling line is read, containing at least first copy of multiple identical copies of data, read data are repeatedly recorded into the same controlling line, read data are transferred to logical memory control contour, reading of whole next controlling line is performed, containing, at least, next copy of multiple identical copies of aforementioned data, data are recorded into same controlling line, from where aforementioned data were read, data are transferred to logical memory control contour, and operations are repeated further until all identical copies of data are transferred to logical memory control contour, errors in binary code are detected, in case of detection of errors corrected data are repeatedly recorded to memory zones where errors were detected.

EFFECT: possible maintenance of integrity of stored data.

2 cl, 8 dwg

FIELD: technology for manufacturing ferro-electric memory cells and engineering of ferroelectric memory device.

SUBSTANCE: aforementioned memory device contains ferroelectric memory cells, at least two sets of electrodes, parallel to other electrodes of set, while electrodes of one are set are positioned practically orthogonally to electrodes of closest next set of electrodes. Method for manufacturing aforementioned memory cells in composition of aforementioned memory device includes forming first electrode, containing at least one layer of metal and at least one metal-oxide layer, above first electrode ferroelectric layer is applied, consisting of thin film of ferroelectric polymer, and then onto this ferroelectric layer at least second electrode is applied, contains at least one layer of metal and at least one metal-oxide layer.

EFFECT: high surface density of cells, possible application of upper electrodes without damage to ferro-electric memory material.

2 cl, 7 dwg

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