Device for continuous grouped growing of oriented layers of silicon on a carbonic fabric

FIELD: devices for continuous grouped growing of the orientated layers of silicon on a carbonic fabric.

SUBSTANCE: the invention is pertaining to the field of growing of polycrystallic layers from a melt of silicon and may be used in production of solar cells (photo-converters) Substance of the invention: the device consist of a crucible for a melt mounted inside a heater, a substrates connected to gears of their relocation and a capillary feeding mechanism. The substrates are made out of a carbonic reticulated fabric, and the capillary feeding mechanism consists of two horizontal sections, located to the left and to the right of the crucible, each of which has a tail swathed by harnesses out of a carbonic thread. The crucible is made with the bottom hollow elongated spout supplied with an independent heater, under the crucible there is a tank for a drain of the crucible residue, the inner surface of which is coated by a layer of a hexagonal boron nitride, and above the crucible a vibrating feeder for feeding the ground silicon is mounted.

EFFECT: the invention ensures growing of polycrystallic layers from a melt of silicon.

1 dwg

 

The invention relates to the field of growing from a melt of polycrystalline silicon layers and may find application in the manufacturing of solar cells (solar cells).

A device containing a crucible, a heater, a pull mechanism and a device for maintaining the level of the melt in the crucible at a constant Mason B. application of a silicon film on the ceramic sheet of the substrate. "Electronics", 1979, t, No. 15, p.10-11). This device allows you to grow silicon layers on long ceramic substrates, coated with a layer of carbon to wetting by molten silicon, using horizontal zheloboobraznogo quartz crucibles.

However, the known device has several disadvantages. So, maintaining the melt level in the crucible is constant technical challenge. During the process of growing a layer of the required procedure "persecution", consisting in the overflow of the crucible melt using the devices for regulating the level, bringing the substrate into contact with the melt and the formation of a meniscus by raising the substrate to the desired height above the walls of the crucible, which complicates the technology and reduces the performance of the installation. In addition, the ceramic substrate is necessary to punch, because otherwise it is impossible to create the back contact to the grown layer is silicon. This further increases the cost of production. A device for growing oriented crystalline layers on a substrate (ed. St. USSR №949979, publ. 1982, Bulletin of inventions and discoveries, No. 45, s), comprising a crucible for melting installed inside the heater, substrate, connected to the mechanism of its movement, and the feeder vertically located in a crucible made of wetted by the melt plates forming between a capillary channel, and having a sharp working edge for supplying the melt to the substrate. The substrate is perpendicular to the plates of the feeder.

The disadvantage of this device is the necessity of using only solid substrates. Upon receipt of the layers of silicon must also be in the substrate hole to hole back electrical contact to the layer of silicon.

Another disadvantage of the known device is unnecessarily complex design of the feeder. He made teams of graphite plates. The feeder is economically advantageous to perform solid, and the capillary channels - semi-open.

The known device does not provide for the filing of the charge in the melting pot. Maintaining the melt level in the crucible relative to the level of the substrate provides a gradual crucible is moved up. This limits the performance of h is discontinuous process capacity of the crucible.

Another disadvantage of the known device is a single use crucible, because after each process, it is destroyed.

The above device closest to the technical nature of the claimed device, therefore, selected as a prototype.

The technical result obtained by carrying out the present invention, is expressed in the increase of productivity and reduction of material cost of the device due to the growing group of layers of silicon on a carbon cloth, reusable crucible and applying vibratory feeder for feeding the crushed silicon in the crucible.

The essence of the invention lies in the fact that the device for growing oriented crystalline silicon layers, comprising a crucible for melting installed inside the heater, substrate, connected to the mechanisms of their move, and capillary feeder, a substrate made of carbon mesh fabric, capillary feeder consists of two horizontal sections, placed to the left and to the right of the crucible, each of which has a shank wrapped bundles of carbon filament crucible is made with the bottom of the hollow elongated spout, provided with an independent heater, under the crucible installed capacity to drain the crucible residue, the inner surface is the terrain which is covered with a layer hexagonal boron nitride, for the continuous feed of crushed silicon in the crucible is used mounted on it vibrating feeder.

Due to the presence of these symptoms is possible to grow layers of silicon on the surface of the group of substrates simultaneously. Performing capillary feeder in the form of two horizontal sections allows for the provision of high performance, use only one crucible with systems recharge silicon and drain crucible residue upon completion of the process. The capillary channels of both sections of the feeder connected to the hydrostatic pressure of the melt in them equally.

The crucible with the bottom of the hollow elongated spout can be used an unlimited number of times, subject to discharge of residual melt after completion of the process. Fused crucible residue can also be used as raw material for carrying out the following processes.

The proposed device is illustrated in the drawing. Thermal insulation, fasteners and machine parts not listed.

Device for the continuous group growth oriented layers of silicon on a carbon cloth contains the left heater 1, is made of graphite, the substrate 2 of the carbon mesh fabric wound on a bobbin 3, the left section of the capillary feeder 4, a graphite crucible 5, the heater of the crucible 6, mounted on tigem vibrating feeder crushed silicon 7 vibrooccasion 8, the heater 9 of the spout of the crucible 5, the capacity to drain crucible residue 10, right by the heater 11, the right section of the capillary feeder 12, the left roller mechanism extrusion 13 and the right - hand mechanism 14. The shank of each of the feeders wrapped the wiring 15 of the carbon filament for capillary feed of the melt. The substrate 2 of the net carbon fabric is cut-to-length strip is subjected to compaction by pyrocarbon and thermochemical cleaning Halogens. Bobbin 3 is placed in the growth chamber or outside and is supplied with a brake for tensioning of the substrate. Section capillary feeders 4 and 12 are made of dense graphite and optionally subjected to thermochemical cleaning and pyrocarbon seal.

The internal surface of the vessel 10 to drain the crucible residue is protected by a layer of hexagonal boron hydride to prevent wetting of molten silicon and subsequent fracture after solidification and cooling. The layer can be applied by rubbing a powder of boron nitride in the surface of the graphite either way atomization of suspensions BN.

The crucible 5 is made from high-density graphite and goes to use the same operations. Vibrating feeder 7 is made of fused silica (graphite steel). The vibrooccasion 8 is placed above the body of vibrating feeder and controlled source is an IR voltage, located outside the growth chamber. Mechanisms 13 and 14 are also placed outside the growth chamber and includes a pair of horizontal rubber rollers, gears, and actuators with control systems.

The device operates as follows.

Cut-to-length tape, modified by pyrocarbon and subjected to a thermochemical cleaning carbon mesh substrate 2, wound on a graphite reel 3, is equipped with a brake for tensioning the substrate is installed inside the growth chamber or in a separate enclosure, associated vacuum-tight flange. In the cavity of a graphite heater 6 is installed graphite crucible 5. On electrically isolated mounting elements are the left 4 and right 12 of the capillary section of the feeder. The shanks of each of the sections are wound by a wiring 15 of the carbon filament. Vibrating feeder 7 load the cleaned crushed silicon. To vibration feeder 7 connect the vibrooccasion 8. The substrate 2 is output to the exhaust slits growth chambers that are closed vacuum-tight lids. After pumping chamber includes a heating system and reaches a temperature above the melting point of silicon. Then include the vibrooccasion 8 and fill the crucible 5 with molten silicon. In the bottom floor slender spout of the crucible image which is the tube 16 of crystalline silicon, to prevent draining of the melt. Then turn off the pump and fill the growth chamber pure argon to atmospheric pressure. Then open the cover of the exhaust slits growth chamber, pull the backing paper and tuck them between the ends of the rollers of the pulling mechanisms 13 and 14. In the future produce a flow of argon with a flow rate of preventing oxidation of the molten silicon. After the tension of the substrate 2 set the speed of their travel and the rate of feed of crushed silicon. As output 17 (substrate with a silicon layer) mechanically breaks off, and the process continues until the exhaustion of the supply of silicon vibrating feeder 7 or substrates on reel 3.

After the process is complete, turn off the pulling mechanisms 13 and 14, mechanically breaks off the grown substrate with a layer of silicon to a level sufficient to close the graduation gap growth chamber. Slit closed vacuum-tight lids, the flow of argon cease and include pumping. Upon reaching the rarefaction include heater spout of the crucible 9, and then melting the tube 16 and the drain crucible residue in the receiver tank 10.

Then all the heating elements are switched off. After cooling, the growth chamber is removed crucible residue from the receiving tank 10. While the crucible 5 remains intact and can be used in an unlimited number of cycles described.

Device for the continuous group growth oriented layers of silicon, comprising a crucible for melting installed inside the heater, substrate, connected to the mechanisms of their move, and capillary feeder, characterized in that the substrate is made of carbon mesh fabric, capillary feeder consists of two horizontal sections, placed to the left and to the right of the crucible, each of which has a shank wrapped bundles of carbon filament crucible is made with the bottom of the hollow elongated spout, provided with an independent heater, under the crucible installed capacity to drain the crucible residue whose inner surface is covered with a layer of hexagonal boron nitride, and over the crucible is vibrating feeder for feeding the crushed silicon.



 

Same patents:

The invention relates to the cultivation of artificial crystals (ZnO, SiO2Caso3, Al2ABOUT3)

The invention relates to a technology of manufacturing products of high temperature dielectric, insulating materials and technologies of their production by chemical vapor deposition from the gas phase for the manufacture of various components for microwave applications and integrated circuits

FIELD: production of solar batteries, integrated circuits and other semiconducting devices.

SUBSTANCE: the invention presents a method of production of alloyed monocrystals or polycrystals of silicon and may be used in production of solar batteries, integrated circuits and other semiconductor devices. The substance of the invention: the method of SUBSTANCE: the invention presents a method of production of alloyed monocrystals or polycrystals of silicon includes preparation of the initial charge consisting of 50 % of silicon alloyed with phosphorus with a specific electrical resistance of 0.8-3.0 Ohm·cm or boron with specific electrical resistance of 1-7 Ohm·cm, its melting-down and consequent growing of crystals from the melt, in which additionally enter elements of IV group from the periodic table by Mendeleyev, in the capacity of which use germanium, titanium, zirconium or hafnium use in concentrations of 1017-7·1019 cm-3. The invention allows to produce chips with high values of life time of minority carrier (LTMC), high homogeneity of electric resistivity (ER) and high concentration of oxygen, with a low concentration of defects and increased thermostability and radiation resistance.

EFFECT: the invention ensures production of chips with high values of LTMC, high homogeneity of ER and high concentration of oxygen, with a low concentration of defects and increased thermostability and radiation resistance.

2 cl, 4 ex, 1 tbl

The invention relates to methods of obtaining crystals of substances with a melting point higher than the softening temperature of quartz, for example silicon for the semiconductor industry by Czochralski method

The invention relates to the technology of silicon for the semiconductor industry by Czochralski method

The invention relates to the technology of semiconductor materials for electronic equipment, in particular silicon produced by the Czochralski method

The invention relates to metallurgy, in particular to the production of high-purity silicon

The invention relates to the field of semiconductor converters of solar energy, in particular the production of plates from multicrystalline silicon for the manufacture of solar cells (SCS)

The invention relates to the field of obtaining single crystals of semiconductor materials and can be used for growing silicon single crystal from a melt by the Czochralski

The invention relates to the production of semiconductor materials and can be used for the production of the original polycrystalline silicon deposition on heated basics in the process of hydrogen restoration of CHLOROSILANES or from the gas phase monosilane

The invention relates to the production of semiconductor materials and can be used for the production of the original polycrystalline silicon deposition on a heated substrate (base) in the process of hydrogen restoration of CHLOROSILANES or from the gas phase monosilane

The invention relates to the field of quantum electronics and optoelectronics, to technology create a lattice of silicon nanoclusters, which are the basis of instrumentation

FIELD: production of solar batteries, integrated circuits and other semiconducting devices.

SUBSTANCE: the invention presents a method of production of alloyed monocrystals or polycrystals of silicon and may be used in production of solar batteries, integrated circuits and other semiconductor devices. The substance of the invention: the method of SUBSTANCE: the invention presents a method of production of alloyed monocrystals or polycrystals of silicon includes preparation of the initial charge consisting of 50 % of silicon alloyed with phosphorus with a specific electrical resistance of 0.8-3.0 Ohm·cm or boron with specific electrical resistance of 1-7 Ohm·cm, its melting-down and consequent growing of crystals from the melt, in which additionally enter elements of IV group from the periodic table by Mendeleyev, in the capacity of which use germanium, titanium, zirconium or hafnium use in concentrations of 1017-7·1019 cm-3. The invention allows to produce chips with high values of life time of minority carrier (LTMC), high homogeneity of electric resistivity (ER) and high concentration of oxygen, with a low concentration of defects and increased thermostability and radiation resistance.

EFFECT: the invention ensures production of chips with high values of LTMC, high homogeneity of ER and high concentration of oxygen, with a low concentration of defects and increased thermostability and radiation resistance.

2 cl, 4 ex, 1 tbl

The invention relates to scintillation materials and can be used in nuclear physics, medicine and oil industry for recording and measuring x-ray, gamma and alpha radiation; non-destructive testing of the structure of solids; three-dimensional positron-electron and x-ray computed tomography and x-ray

The invention relates to scintillation materials and can be used in nuclear physics, medicine and oil industry for recording and measuring x-ray, gamma and alpha radiation; non-destructive testing of the structure of solids; three-dimensional positron-electron and x-ray computed tomography and x-ray

The invention relates to the production of single crystals, to a device for growing single crystals from the melt, and can be used to obtain calibrated profiled bulk single crystals, in particular sapphire

The invention relates to the technology of growing single crystals from a viscous melt refractory oxides by Czochralski method for producing three-dimensional shaped single crystals with a high degree of perfection patterns

The invention relates to the cultivation of the melt bulk single crystals of sapphire and are aimed at increasing the service life of structural elements

The invention relates to the cultivation of molten sapphire crystal and is aimed at improving the thermal protection system

The invention relates to the cultivation of molten sapphire crystal by the method of crystallization from the melt

The invention relates to the production of single crystals and can be used in the technology of growing single crystals from a viscous melt refractory oxides by Stepanov method for obtaining three-dimensional profiled calibrated single crystals of large diameter with a high degree of perfection patterns
Up!